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ORCIDZhongze Han
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2020 – today
- 2026
[j9]Zhongze Han, Wenrui Xia, Weiming Shen, Qiuning Zhu, Hongqi Liu, Chaoyong Zhang
:
Simulation-to-real transfer learning for bearing fault diagnosis across working conditions: A hybrid approach combining physical modeling and data-driven techniques. Adv. Eng. Informatics 69: 103998 (2026)- [j8]Saixiyalatu Bao, Zhongze Han, Linran Chen, Zichen Qiu, Chaoyong Zhang:
Multi-source uncertainty guided semi-supervised multimodal tool wear recognition and prediction in extremely label-scarce scenarios. Expert Syst. Appl. 317: 131800 (2026) - [j7]Zhongze Han, Yue Cao, Xuanzhi Liu, Jinhui Cheng, Jianguo Yang:
A Scalable 1L2D Multi-Core Near-DRAM Computing Accelerator Based on 3D Hybrid Bonding for AI Models. IEICE Trans. Electron. 109(3): 101-110 (2026) - [j6]Zhongze Han, Hanghang Gao, Weizeng Li, Zhi Li, Zhidao Zhou, Yiman Wang, Junzhe Shen, Junyu Zhu, Bohan Wang, Jianguo Yang, Jinshan Yue, Hongyang Hu, Chunmeng Dou:
A hybrid-tiling attention accelerator with a fully-pipelined balanced systolic array in 3D hybrid-bonding near-DRAM integration. Microelectron. J. 171: 107108 (2026) - [c4]Junzhe Shen, Zhidao Zhou, Wenfeng Zha, Zhi Li, Weizeng Li, Bohan Wang, Junyu Zhu, Hanghang Gao, Zhongze Han, Yiman Wang, Linfang Wang, Hongyang Hu, Qing Luo, Chunmeng Dou, Ming Liu:
A 12nm 4Mb 104.56-to-137.75TFLOPS/W Charge-Trap Transistor-Based Computing-in-Memory Macro Using Analog-Predict-Digital-Compute for AI Edge Devices. ISSCC 2026: 514-516 - [c3]Weizeng Li, Bohan Wang, Zhidao Zhou, Junyu Zhu, Zhi Li, Junzhe Shen, Wenfeng Zha, Zhongze Han, Yiman Wang, Linfang Wang, Hongyang Hu, Qing Luo, Chunmeng Dou, Ming Liu:
30.6 A 16Mb 166.8TOPS/W Near-Memory Phase-Domain-Computing Ferroelectric NAND Flash for Approximate Nearest Neighbor Search on Edge Devices. ISSCC 2026: 522-524 - [c2]Yue Cao, Jinghao Jiang, Haijun Jiang, Qian Zhang, Xuanzhi Liu, Jinhui Cheng, Zhongze Han, Xiping Jiang, Fengguo Zuo, Song Wang, Fujun Bai, Yixin Guo, Chunmeng Dou, Jianguo Yang, Hangbing Lv, Qi Liu, Ming Liu:
A 1.2GHz 12.77GB/s/mm2 3D Two-DRAM-One-Logic Process-Near-Memory Chip for Edge LLM Applications. ISSCC 2026: 524-526 - 2025
- [j5]Weizeng Li, Zhidao Zhou, Linfang Wang, Junyu Zhu, Junzhe Shen, Hongyang Hu, Baihan Wang, Zhi Li, Wang Ye, Zhongze Han, Hanghang Gao, Chunmeng Dou:
An energy-efficient FeFET-based computing-in-memory macro using BEOL-integrated HZO ferroelectric capacitors. Sci. China Inf. Sci. 68(10) (2025) - 2024
- [j4]Qiqiao Wu, Yue Cao, Qing Luo, Haijun Jiang, Zhongze Han, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Jianguo Yang, Ming Liu:
A 9-Mb HZO-Based Embedded FeRAM With 10-Cycle Endurance and 5/7-ns Read/Write Using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. IEEE J. Solid State Circuits 59(1): 208-218 (2024) - [j3]Yixuan Liu, Zhongze Han, Qiqiao Wu, Honghu Yang, Yue Cao, Yongkang Han, Haijun Jiang, Xiaoyong Xue, Jianguo Yang, Xiaoyang Zeng:
A 1024-Spin Scalable Ising Machine With Capacitive Coupling and Progressive Annealing Method for Combination Optimization Problems. IEEE Trans. Circuits Syst. II Express Briefs 71(12): 5009-5013 (2024) - 2023
- [j2]Yulin Zhao, Yuan Wang, Donglin Zhang, Zhongze Han, Qiao Hu, Xuanzhi Liu, Qingting Ding, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Qing Luo, Jianguo Yang, Hangbing Lv:
A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory. Sci. China Inf. Sci. 66(5) (2023) - [c1]Jianguo Yang, Qing Luo, Xiaoyong Xue, Haijun Jiang, Qiqiao Wu, Zhongze Han, Yue Cao, Yongkang Han, Chunmeng Dou, Hangbing Lv, Qi Liu, Ming Liu:
A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier. ISSCC 2023: 498-499 - 2022
- [j1]Yulin Zhao, Jie Yu, Donglin Zhang, Qiao Hu, Xuanzhi Liu, Haijun Jiang, Qingting Ding, Zhongze Han, Jinhui Cheng, Wenjun Zhang, Yue Cao, Ruixi Zhou, Hongfei Lu, Xiaoxin Xu, Jianguo Yang:
A 0.02% Accuracy Loss Voltage-Mode Parallel Sensing Scheme for RRAM-Based XNOR-Net Application. IEEE Trans. Circuits Syst. II Express Briefs 69(6): 2697-2701 (2022)
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