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Igct

The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of GTO thyristors with improved turn-off performance and new technological advances at the device, gate-drive, and application levels. It has a homogenous switching area up to dynamic avalanche limits, requires no snubber circuits, and improved loss characteristics allow operation into the kHz range. A new IGCT family with integrated high-power diodes has been developed for applications from 0.5-6 MVA, extendable to over 100 MVA through series and parallel connections. A 100 MVA inverter using IGCTs has demonstrated high reliability in commercial operation.

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48 views1 page

Igct

The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of GTO thyristors with improved turn-off performance and new technological advances at the device, gate-drive, and application levels. It has a homogenous switching area up to dynamic avalanche limits, requires no snubber circuits, and improved loss characteristics allow operation into the kHz range. A new IGCT family with integrated high-power diodes has been developed for applications from 0.5-6 MVA, extendable to over 100 MVA through series and parallel connections. A 100 MVA inverter using IGCTs has demonstrated high reliability in commercial operation.

Uploaded by

ARVIND
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Integrated Gate commutated thyristor

The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of


the hard driven GTO thyristor, including its dramatically improved turn- off
performance, with technological breakthroughs at the device, gate-drive and
application levels. Homogenous switching area of the IGCT up to the dynamic
avalanche limits. Snubber circuits are no longer needed. Improved loss
characteristics allow high frequency applications extending into the kHz range. A
new IGCT device family with integrated high- power diodes has been developed
for applications in the 0.5-6 MVA range, extending to several 100 MVA with series
and parallel connections. A first 100 MVA inverter based on the IGCT has been in
commercial operation and confirms the very high level of reliability of this new
technology. Other new application using the IGCT platform includes ABB’s new
ACS1000 drive for medium voltage applications.

www.downloadszone.co.nr

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