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2SC3502 NPN Transistor Specs

The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

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95 views2 pages

2SC3502 NPN Transistor Specs

The document provides specifications for the 2SC3502 silicon NPN power transistor manufactured by INCHANGE Semiconductor. Key specifications include a collector-emitter breakdown voltage of 200V, applications in ultra-high definition CRT displays and video output, and electrical characteristics such as a DC current gain ranging from 40 to 320 and a current-gain bandwidth product of at least 150MHz.

Uploaded by

Mahfudz Fauzy
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC3502

DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 200 V
·Complement to Type 2SA1380

APPLICATIONS
·Designed for ultrahigh-definition CRT display, video out-
put applicaitons

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL PARAMETER VALUE UNIT

VCBO Collector-Base Voltage 200 V

VCEO Collector-Emitter Voltage 200 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current-Continuous 0.1 A

ICM Collector Current-Peak 0.2 A

Collector Power Dssipation


1.2
Ta=25℃
PC W
Collector Power Dssipation
5
TC=25℃

Ti Junction Temperature 150 ℃

Tstg Storage Temperature Range -55~150 ℃

isc Website：[Link]
INCHANGE Semiconductor isc Product Specification

isc Silicon NPN Power Transistor 2SC3502

ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 200 V

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 200 V

V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 5 V

VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA


B 0.6 V

VBE(sat) Base-Emitter Saturation Voltage IC= 20mA ;IB= 2mA


B 1.0 V

ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 μA

IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA

hFE DC Current Gain IC= 10m A ; VCE= 10V 40 320

fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V; 150 MHz

COB Collector Capacitance IE= 0; VCB= 30V;ftest = 1MHz 1.7 pF

‹ hFE Classifications

C D E F

40-80 60-120 100-200 160-320

isc Website：[Link]

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