BSP 295
SIPMOS Small-Signal Transistor
N channel Enhancement mode Logic Level
VGS(th) = 0.8...2.0V
Pin 1 G
Type
Pin 2 D
Marking
Pin 3 S
Pin 4 D
VDS
50 V
ID
1.8 A
RDS(on)
0.3
Package
BSP 295
Type BSP 295
SOT-223
BSP 295
Ordering Code Q67000-S066
Tape and Reel Information E6327
Maximum Ratings Parameter Symbol Values Unit
Drain source voltage Drain-gate voltage
RGS = 20 k
VDS V
DGR
50
50
VGS
Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Continuous drain current
TA = 34 C
20
Class 1 A 1.8
ID
DC drain current, pulsed
TA = 25 C
IDpuls
7.2
Ptot
Power dissipation
TA = 25 C
W 1.8
Data Sheet
05.99
BSP 295
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1)
Tj Tstg RthJA R thJS
-55 ... + 150 -55 ... + 150
70 10
E 55 / 150 / 56
K/W
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 C
V (BR)DSS
V 50 -
Gate threshold voltage
VGS=VDS, ID = 1 mA
V GS(th)
0.8
IDSS
1.4
Zero gate voltage drain current
VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = 125 C VDS = 30 V, VGS = 0 V, Tj = 25 C
IGSS
0.1 8 -
1 50 100
nA nA
Gate-source leakage current
VGS = 20 V, VDS = 0 V
RDS(on)
10
100
Drain-Source on-state resistance
VGS = 10 V, ID = 1.8 A VGS = 4.5 V, ID = 1.8 A
0.25 0.45 0.3 0.5
Data Sheet
05.99
BSP 295
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Values typ. max. Unit
Transconductance
VDS 2 * ID * RDS(on)max, ID = 1.7 A
gfs
S 0.5 1.7 pF 320 425
Input capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Ciss
Output capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
Coss
Crss
110
170
Reverse transfer capacitance
VGS = 0 V, V DS = 25 V, f = 1 MHz
td(on)
50
75 ns
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
tr
12
Rise time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
td(off)
20
30
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
tf
120
160
Fall time
VDD = 30 V, VGS = 10 V, ID = 0.29 A RGS = 50
85
115
Data Sheet
05.99
BSP 295
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Values typ. max. Unit
Reverse Diode
Inverse diode continuous forward current
TA = 25 C
IS
A 1.8
Inverse diode direct current,pulsed
TA = 25 C
ISM
V SD
7.2 V
Inverse diode forward voltage
VGS = 0 V, IF = 3.6 A, Tj = 25 C
1.1
1.5
Data Sheet
05.99
BSP 295
Power dissipation Ptot = (TA)
Drain current ID = (TA) parameter: VGS 10 V
1.9 A 1.6
2.0 W
Ptot
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160
ID
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 C 160
TA
TA
Safe operating area ID=f(VDS) parameter : D = 0, TC=25C
Transient thermal impedance Zth JA = (tp ) parameter: D = tp / T
10 2 K/W 10 1
ZthJA
10 0
10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01
10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10
tp
Data Sheet
05.99
BSP 295
Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C
4.0 A
e k j Ptot = 2W ih l
Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C
0.9
a b c d
gf
VGS [V] a 2.0
b 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0
ID
3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4
a
RDS (on) 0.7
0.6 0.5 0.4 0.3
k
c d
d e
f g h
i j k l
e f g i h j
0.2
b
0.1 0.0 V 5.0
VGS [V] =
a 2.5 2.0 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 6.0 h i 7.0 8.0 j 9.0 k 10.0
0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2 A 3.8
VDS
ID
Typ. transfer characteristics ID = f(V GS) parameter: tp = 80 s
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s,
4.5 A
ID
2.2 S
gfs
1.8 1.6
3.5 3.0
1.4 2.5 2.0 1.5 1.0 0.4 0.5 0.0 0 1 2 3 4 5 6 7 8 V
VGS
1.2 1.0 0.8 0.6
0.2 0.0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 A
ID
4.0
Data Sheet
05.99
BSP 295
Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 1.8 A, VGS = 10 V
0.75
Gate threshold voltage VGS (th) = (Tj ) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
0.65
RDS (on)0.60
0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 -60 -20 20 60 100 C 160
VGS(th)
3.6 3.2 2.8
98% typ
2.4
98%
2.0 1.6 1.2
typ
2%
0.8 0.4 0.0 -60 -20 20 60 100 C 160
Tj
Tj
Typ. capacitances
C = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3
Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s
10 1
pF
C
Ciss
IF
10 0
10 2
Coss
Crss
10 1
10 -1
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 0 0 10 -2 0.0
10
15
20
25
30
V
VDS
40
0.4
0.8
1.2
1.6
2.0
2.4
3.0
VSD
Data Sheet
05.99
BSP 295
Drain-source breakdown voltage V(BR)DSS = (Tj)
Safe operating area ID=f(V DS) parameter : D = 0.01, TC=25C
60 V 58
V(BR)DSS 57
56 55 54 53 52 51 50 49 48 47 46 45 -60 -20 20 60 100 C 160
Tj
Data Sheet
05.99
