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Principles of Semiconductor Devices: Chapter 7: MOS Field Effect Transistors

Power MOSFET

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215 views3 pages

Principles of Semiconductor Devices: Chapter 7: MOS Field Effect Transistors

Power MOSFET

Uploaded by

duppal35
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
  • 7.8 Power MOSFETs

5/18/2016 PowerMOSFETs

PrinciplesofSemiconductorDevices
TitlePageTableofContentsHelp [Link],2011

Chapter7:MOSFieldEffectTransistors

[Link]
[Link]
[Link]
[Link](IGBTs)

[Link]

TheLaterallyDiffusedMOSFET(LDMOS)isanasymmetricpowerMOSFETdesignedforlowonresistance
[Link]
[Link]
[Link],
[Link]
largeradiusofcurvatureattheedges,[Link]
devicesnameimpliesthatthefabricationrequireadiffusion,thedopantscanjustaswellbeimplantedand
[Link].
[Link]
[Link],followedbyshallowp+andn+[Link]+regionsprovide
[Link]+regioncontactstheptypebody,whichistypicallyshortedto
thesource,therebyeliminatingthebodyeffect.

Figure7.8.1: CrosssectionofaLaterallyDiffusedMOSFET(LDMOS)structure.
TheLDMOSstructurecombinesashortchannellengthwithhighbreakdownvoltageasdesiredforhigh
[Link]
amplifiersinbasestationsofwirelesscommunicationssystemsaswellasnumerousUHFandLbandpower
amplifiersinbroadcast,communicationandradarsystems.

[Link]

[Link] 1/3
5/18/2016 PowerMOSFETs

TheVMOStransistor,namedaftertheVshapedgroove,isaverticalMOSFETwithhighcurrenthandling
[Link]+/player,whichiscutbyaV
[Link]
(100)[Link],
[Link],itcreatestwovertical
MOSFETs,[Link]
resultsinashortgatelength,[Link]
allowstheuseofalowdopeddrainregion,whichresultsinahighblockingvoltage.

Figure7.8.2: CrosssectionoftwoverticalMOSFETstructures:a)VMOSandb)UMOS.
[Link]
layer,againresultingintwoverticalMOSFETs.
[Link]
resemblesahoneycombstructureinwhichthehexagonalareasaresourceareas,whilethegatemetalis
locatedontheperimeters.

[Link](IGBTs)

TheInsulatedGateBipolarTransistororIGBTforshortcombinesthehighdccurrentgainofaMOSFETwith
thehighcurrenthandlingcapabilityandhighblockingvoltageofaBJTinasurprisinglysimplestructuresuch
[Link],theverticalstructurelookslikethatofaregularbipolar
[Link]+substrateratherthanann+[Link]
analyzethisstructureweusetheequivalentcircuit,whichcontainsthepnpBJTasformedbythebottom
[Link]
[Link],thatthe
drainregionofthenMOSFETistheburiedntypelayer,[Link]
electronsoriginatingfromthen+sourceflowlaterallyunderneaththegateandthenflowdownintheburiedn
typeregion,[Link],the
[Link]
[Link]
connectedinaswitchingcircuitjustlikeannpnBJTwiththeimportantdistinctionthatnogatecurrentis
requiredtomaintaintheonstatecurrent.

[Link] 2/3
5/18/2016 PowerMOSFETs

Figure7.8.3: InsulatedGateBipolarTransistor(IGBT):a)equivalentcircuitandb)devicecrosssection.
Boulder,December2004

[Link] 3/3

(http://ecee.colorado.edu/~bart/book/book/append/append1.htm) (http://ecee.colorado.edu/~bart/book/book/append/append1.htm)
5/18/2016 Power MOSFETs http://ecee.colorado.edu/~bart/book/book/chapter7/ch7_8.htm 2/3 The VMOS transistor, named after the 
5/18/2016 Power MOSFETs http://ecee.colorado.edu/~bart/book/book/chapter7/ch7_8.htm 3/3 Figure 7.8.3: Insulated Gate Bipolar 

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