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Applied Physics (PHY-102) : Lecture # 14

This document summarizes key concepts in solid state physics and electronics covered in Lecture 14, including: 1) The doping of semiconductors to create N-type and P-type materials and the formation of a PN junction diode. 2) The biasing of a PN junction diode and the characteristics of its I-V curve, including reverse leakage current and avalanche breakdown. 3) Applications of diodes in rectification circuits and light-emitting diodes (LEDs) and how they work by emitting photons when electrons fall energy levels.

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Muhammad Husnain
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0% found this document useful (0 votes)
130 views21 pages

Applied Physics (PHY-102) : Lecture # 14

This document summarizes key concepts in solid state physics and electronics covered in Lecture 14, including: 1) The doping of semiconductors to create N-type and P-type materials and the formation of a PN junction diode. 2) The biasing of a PN junction diode and the characteristics of its I-V curve, including reverse leakage current and avalanche breakdown. 3) Applications of diodes in rectification circuits and light-emitting diodes (LEDs) and how they work by emitting photons when electrons fall energy levels.

Uploaded by

Muhammad Husnain
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd

Applied Physics (PHY-102)

Lecture # 14
“Solid State Physics and Electronics”

Doping, Types of Semi-conductors, N-Type and P-Type semi-conductors,


The junction Diode, Biasing of PN-Junction, Characteristics of PN-
Junction
Doping of Semiconductor
P-Type Semiconductor:
When the trivalent impurity is added to an intrinsic or pure semiconductor (silicon or
germanium).

1/20
Doping of Semiconductor
N-Type Semiconductor:
An n-type semiconductor is an intrinsic semiconductor doped with phosphorus (P) or
arsenic (As) etc. (the pentavalent impurities)

2/20
Aim

Formation of PN
Junction Diode

3/20
Forward and Reverse Biasing

4/20
Aim

5/20
Characteristics of PN Junction (I-V Curve)

6/20
Characteristics of PN Junction (I-V Curve)
Reverse Leakage Current:
When a diode is reverse biased, the width of the depletion region
increases. Minority carriers of each material are pushed through the
depletion zone to the junction. This action causes a very small leakage
current to occur. Generally, leakage current is so small that it can be
considered as negligible.

Avalanche Effect:
When the reverse bias voltage V applied to the diode is increased to a
sufficiently high enough value, it will cause the diode’s PN junction to
overheat and fail due to the avalanche effect around the junction. This
may cause the diode to become shorted and will result in the flow of
maximum circuit current.
7/20
Half wave rectification by diode
A rectifier is an electrical device that converts alternating current (AC),
which periodically reverses direction, to direct current (DC), which
flows in only one direction.

8/20
Full wave rectification by diodes

9/20
Light- Emitting Diodes

LEDs

Red LED White LED

LED for displays LED for traffic light 10/20


Blue LED
What is an LED?

• Light-emitting diode
• Semiconductor
• Has polarity

11/20
LED: How It Works

• The wholes exist at a lower


energy level than the free
electrons

• When sufficient voltage is applied to the chip


across the leads of the LED, electrons can move
easily in only one direction across the junction
between the p and n regions.

• Therefore when a free electrons falls it losses


energy

12/20
LED: How It Works

• This energy is emitted


in a form of a photon,
which causes light

• The color of the light is determined by


the fall of the electron and hence
energy level of the photon

13/20
Inside a Light Emitting Diode

1. Transparent Plastic
Case
2. Terminal Pins
3. Diode

14/20
Kinds of LEDs

15/20
Photon Emission in Semiconductor

Conduction When an electron meets a


band hole, it falls into a lower
energy level, and releases
EC Photon energy in the form of a
Eg photon.
EF
The wavelength of the light
EV depends on the band gap of
the semiconductor material
Valence
band

Semiconductor materials: Si, Ge, GaAs, InGaAs, AlGaAs,


InP, SiGe, etc 16/20
17
DIODE LASERS

Diode lasers have been used for cutting,


surgery, communication (optical fibre),
CD writing and reading etc

17/20
Photodiode
When a light is made to illuminate the PN junction, covalent bonds are
ionized. This generates hole and electron pairs. Photocurrents are
produced due to generation of electron-hole pairs. Electron hole pairs are
formed when photons of energy more than 1.1eV hits the diode.

1) Photovoltaic Mode

2) Photoconductive Mode

18/20
Semiconductors
• In most of today’s solar cells the absorption of photons, which results in
the generation of the charge carriers, and the subsequent separation of the
photo-generated charge carriers take place in semiconductor materials.
• Therefore, the semiconductor layers are the most important parts of a
solar cell; they form the heart of the solar cell.

19/20
Harvesting the sunlight
The entire spectrum of sunlight, from infrared to ultraviolet, covers a range of about
0.5 eV to about 2.9 eV. The primary reason why solar cells are not 100% efficient is
because semiconductors do not respond to the entire spectrum of sunlight. Photons
with energy less than silicon's band gap pass through the cell and are not absorbed,
which wastes about 18% of incoming energy. The energy content of photons above
the band gap will be wasted surplus re-emitted as heat or light. This accounts for an
additional loss of about 49%. Thus about 67% of energy from the original sunlight is
lost, or only 33% is usable for electricity in an ideal solar cell.

20/20

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