MBRA1H100T3G,

NRVBA1H100T3G

Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
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Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features SCHOTTKY BARRIER
epitaxial construction with oxide passivation and metal overlay RECTIFIER
contact. Ideally suited for low voltage, high frequency rectification, or 1.0 AMPERES, 100 VOLTS
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.

Features
 Small Compact Surface Mountable Package with J−Bent Leads
SMA
 Rectangular Package for Automated Handling CASE 403D
 Highly Stable Oxide Passivated Junction PLASTIC
 Low Forward Voltage Drop
 Guardring for Stress Protection 1 2
 AEC−Q101 Qualified and PPAP Capable Cathode Anode
 NRVBA Prefix for Automotive and Other Applications Requiring
MARKING DIAGRAMS
Unique Site and Control Change Requirements
 This is a Pb−Free Device*
A110
Mechanical Characteristics:
AYWWG
 Case: Epoxy, Molded
 Weight: 70 mg (approximately)
 Finish: All External Surfaces Corrosion Resistant and Terminal A110 = Device Code
Leads are Readily Solderable A = Assembly Location
Y = Year
 Lead and Mounting Surface Temperature for Soldering Purposes:
WW = Work Week
260C Max. for 10 Seconds G = Pb−Free Package
 Polarity: Cathode Lead Indicated by Polarity Band
 ESD Ratings: ORDERING INFORMATION
 Machine Model = C
Device Package Shipping†
 Human Body Model = 3B
 Device Meets MSL 1 Requirements MBRA1H100T3G SMA 5,000 /
(Pb−Free) Tape & Reel **
NRVBA1H100T3G SMA 5,000 /
(Pb−Free) Tape & Reel **

** 12 mm Tape, 13” Reel

†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.

 Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

January, 2012 − Rev. 2 MBRA1H100/D
 MBRA1H100T3G, NRVBA1H100T3G

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 100 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current IO A
(TL = 167C) 1.0

Non−Repetitive Peak Surge Current IFSM A

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) 50

Storage and Operating Junction Temperature Range (Note 1) Tstg, TJ −65 to +175 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.

THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 2) YJCL 14 C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 75 C/W
Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 280 C/W
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2)
1 oz FR4 Board.
3. Mounted with pad size approximately 6 mm2 copper, 1 oz FR4 Board.

ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit

Maximum Instantaneous Forward Voltage (Note 4) VF V

(IF = 1.0 A, TJ = 25C) 0.76
(IF = 2.0 A, TJ = 25C) 0.84
(IF = 1.0 A, TJ = 125C) 0.61
(IF = 2.0 A, TJ = 125C) 0.68

Maximum Instantaneous Reverse Current (Note 4) IR

(Rated dc Voltage, TJ = 25C) 40 mA
(Rated dc Voltage, TJ = 125C) 0.5 mA
4. Pulse Test: Pulse Width  380 ms, Duty Cycle  2.0%.

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 MBRA1H100T3G, NRVBA1H100T3G

TYPICAL CHARACTERISTICS

100 100
IF, FORWARD CURRENT (A)

IF, FORWARD CURRENT (A)

150C 125C 25C 150C 125C 25C

10 10

1 1

0.1 0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

10 10
IR, REVERSE CURRENT (mA)

IR, REVERSE CURRENT (mA)

1 150C 1 150C

0.1 0.1
125C 125C

0.01 0.01
25C
0.001 0.001

0.0001 25C 0.0001

0.00001 0.00001
0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)

2.0 1.0
PFO, AVERAGE POWER DISSIPATION (W)

RqJL = 14C/W
TJ = 175C Square Wave
dc
0.8
1.5
dc
Square Wave 0.6
1.0
0.4

0.5
0.2

0 0
135 140 145 150 155 160 165 170 175 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating Figure 6. Forward Power Dissipation

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 MBRA1H100T3G, NRVBA1H100T3G

TYPICAL CHARACTERISTICS

140
TJ = 25C
120

C, CAPACITANCE (pF)
100

80

60

40

20

0
0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance

1000

50% (DUTY CYCLE)

100 20%
10%
5.0%
R(t) (C/W)

10 2.0%

1.0%
1.0

0.1
SINGLE PULSE
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (6 mm2 pad)

100
50% (DUTY CYCLE)
20%
10 10%
5.0%
R(t) (C/W)

2.0%
1.0
1.0%

0.1
SINGLE PULSE

0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)

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 MBRA1H100T3G, NRVBA1H100T3G

PACKAGE DIMENSIONS

SMA
CASE 403D−02
ISSUE F
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
E Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 403D−01 OBSOLETE, NEW STANDARD IS 403D−02.

MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
b D A 1.97 2.10 2.20 0.078 0.083 0.087
A1 0.05 0.10 0.15 0.002 0.004 0.006
b 1.27 1.45 1.63 0.050 0.057 0.064
c 0.15 0.28 0.41 0.006 0.011 0.016
D 2.29 2.60 2.92 0.090 0.103 0.115
POLARITY INDICATOR
OPTIONAL AS NEEDED E 4.06 4.32 4.57 0.160 0.170 0.180
(SEE STYLES) HE 4.83 5.21 5.59 0.190 0.205 0.220
L 0.76 1.14 1.52 0.030 0.045 0.060

STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE

A1
L c

SOLDERING FOOTPRINT*

4.0
0.157

2.0
0.0787

2.0
0.0787

SCALE 8:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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