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What Is Flash Memory

Flash memory is a type of non-volatile computer storage that can be electrically erased and reprogrammed. It is used to store data in devices like memory cards and USB drives. Flash memory stores information in an array of floating gate transistors and uses electrical charges to represent 1s and 0s. It has advantages over hard disks like durability, shock resistance, and lower power consumption. However, it has limitations such as finite write cycles and slower access times than main memory. Major applications of flash memory include digital cameras, phones, and solid state storage.

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0% found this document useful (0 votes)
2K views6 pages

What Is Flash Memory

Flash memory is a type of non-volatile computer storage that can be electrically erased and reprogrammed. It is used to store data in devices like memory cards and USB drives. Flash memory stores information in an array of floating gate transistors and uses electrical charges to represent 1s and 0s. It has advantages over hard disks like durability, shock resistance, and lower power consumption. However, it has limitations such as finite write cycles and slower access times than main memory. Major applications of flash memory include digital cameras, phones, and solid state storage.

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girish90
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© Attribution Non-Commercial (BY-NC)
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FLASH MEMORY

Submitted by:Satyajit bora (ELB08027) Girish narah (ELB08029) POINTS OF DISCUSSION 1. 2. 3. 4. 5. 6. What is flash memory? Technical Overview Structure & Operation Flash file systems History of flash memory Types 6.1. NAND 6.2. NOR 7. Distinction between NOR and NAND flash 8. Standardization 9. Data protection 10. Application 11. Advantages 12. Limitations 13. Future 14. Conclusion Definition Flash memory is a non-volatile computer storage that can be electrically erased and reprogrammed. It is used to store and transfer data between computers and other digital products. It is a technology that is primarily used in memory cards and USB flash drives. Technical Overview of Flash Memory Flash memory is non-volatile, i.e. no power is needed to maintain the information stored in the chip. In addition, flash memory offers fast read access(though not as fast as volatile DRAM memory used for main memory in PCs). Flash memory is better shock resistance than other hard disks. These characteristics explain the popularity of flash memory for applications as storage on battery powered devices.

Structure and Operation of Flash Memory

The information is stored in Flash memory as an array of floating gate transistors, called "memory cells", each of which traditionally stores one bit of information. Newer flash memory devices such as multi-level cell devices, can store more than 1 bit per cell, by varying the number of electrons placed on the floating gate of a cell. Flash memory cells are similar to an EEPROM i.e. electrically erasable programmable read only memory. The flash memory cell functions by storing charge in the floating gate. The presence of charge will then determine whether the channel will conduct or not. During the read cycle a "1" at the output means the channel is in its low resistance or ON state. The Control gate is used to charge up the gate capacitance during the write cycle. Flash file systems Because of the particular characteristics of flash memory, it is best used with specifically designed file systems which spread writes over the media and deal with the long erase times of NOR flash blocks. The basic concept behind flash file systems is: When the flash store is to be updated, the file system will write a new copy of the changed data over to a fresh block, remap the file pointers, then erase the old block later when it has time. One of the earliest flash file systems was Microsoft's FFS2 (presumably preceded by FFS1), for use with MS-DOS in the early 1990s. Around 1994, the PCMCIA industry group approved the FTL (Flash Translation Layer) specification, which allowed a flash device to look like a FAT disk, but still have effective wear levelling. Other commercial systems such as FlashFX by Datalight were created to avoid patent concerns with FTL.

Flash Memory History The Flash memory was invented by Dr. Fujio Masuoka while working for Toshiba in 1984. In 1988 intel corporation introduced the first commercial NOR flash memory showing the massive potential of the invention. In 1987, Toshiba announced NAND flash at International Electron Devices Meeting. The first NAND-based removable media format was SmartMedia (a flash memory card with capacity ranging from 0.5-128MB) Some other memory card formats are
1.multimedia card

2. mini SD 3. micro SD 4. memory stick 5. XD picture card etc. Types of flash memory Flash memories are basically of two types- 1)NOR & 2)NAND

NOR It is a high speed random access memory, being able to read and write data in specific locations in the memory without accessing the memory in sequential mode. In NOR flash, memory cells are connected in parallel to the bitlines, allowing cells to be read and programmed individually. It allows the handling data as a single bit. Its endurance is 10,000 to 1,000,000 erase cycles.

NAND It reads and writes data in high speed, sequential mode, handling data in small, block sizes. In NAND flash, memory cells are connected in series. Unlike NOR flash memory, it handles data in small, block size called page It also has up to ten times the endurance of NOR flash. NAND flash memory is less expensive than NOR flash memory and can accommodate more storage capacity in same size.

For example, in most digital cameras NAND flash based digital films are used, as pictures are usually taken and stored in sequential mode. Also it is more efficient when pictures are read back, as it transfers whole pages of data very quickly. As a sequential storage medium, NAND flash is ideal data storage. Comparison between NOR & NAND flash memory NOR Yes No Yes parallel Cell phones, BIOS storage for PCs, Networking device memory NAND Yes Yes No series Digital cameras, Cell phones, Mp3 players, Solid state disk drives, Set-top boxes, Industrial storage

High speed access Page mode data access Random byte level access Connection of memory cells Typical access

Standardization:-

A group called the Open NAND Flash Interface (ONFI) working group has developed a standardized low-level interface for NAND flash chips. This allows interoperability between conforming NAND devices from different vendors. Its specifications are as follows a standard physical interface (pinout) a standard command set for reading, writing, and erasing NAND flash chips a mechanism for self-identification

The ONFI group is supported by major NAND Flash manufacturers, including Hynix, Intel, Micron technology, and Numonyx, as well as by major manufacturers of devices incorporating NAND flash chips. A group of vendors, including Intel, Dell, and Microsoft formed a Non-Volatile Memory Host Controller Interface (NVMHCI) Working Group. The goal of the group is to provide standard software and hardware programming interfaces for nonvolatile memory subsystems, including the "flash cache" device connected to the PCI Express bus.

ADVANTAGE I. Since flash memory is non-volatile, no power is needed to maintain the information stored in the chip Flash memory offers fast read access times and better kinetic shock resistance than hard disks.

II.

III.

When packaged in a "memory card," it is enormously durable, being able to withstand intense pressure, extremes of temperature, and even immersion in water. Flash memory costs far less than byte-programmable EEPROM. Low power consumption.

IV. V.

DISADVANTAGE VI. VII. Not as fast as volatile DRAM memory used for main memory in PCs. Although it can be read or programmed a byte or a word at a time in a random access fashion, it must be erased a "block" at a time. flash memory has a finite number of erase-write cycles The cost per byte of flash memory remains significantly higher than the corresponding cost of a hard disk drive. Smaller capacity. It will deteriorate if it is written a number of times.

VIII. IX.

X. XI.

Data Protection:Protection of the non-volatile data in a flash device has always been an important consideration. Several Flash products feature dynamic hardware block-locking, so that critical code can be kept secure while non-locked blocks are programmed and erased. This locking scheme offers two levels of protection. The first allows software-only control of block locking (useful for frequently-changed data blocks), while the second requires hardware interaction before locking can be changed, protecting infrequently-changed code blocks. This locking capability is different by product family. Intel factories program a unique, unchangeable 64-bit number into the OTP, and the customer as desired can program other 64-bit register. Once programmed, the customer segment can be locked to prevent further reprogramming. The OTP information can be used for manufacturing tractability and/or a small-encrypted security key for system authentication.

Applications of Flash Memory:IN CONSUMER DEVICES, FLASH MEMORY IS WIDELY USED IN: Notebook computers

Digital cameras Personal Digital Assistants (PDAs) Cell phones Global Positioning Systems (GPS) Electronic musical instruments Solid-state music players such as Television set-top boxes MP3 players Pagers Personal computers IN INDUSTRIAL DEVICES, FLASH MEMORY IS WIDELY USED IN: Security systems Military systems Embedded computers Solid-state disk drives Networking and communication products Wireless communication devices Retail management products (e.g., handheld scanners) Medical products

Future of Flash Memory:Flash memory still remains the most aggressively scaled electronics technology. It is expected that a memory cell size of 20 nm will be made by 2010. In spite of all this there is a strong possibility that it may be replaced by other emerging technologies. Phase-change memory could enable future generations of high-density "nonvolatile" memory devices that do not need electrical power to retain information, according to scientists from IBM, Macronix and Qimonda. CONCLUSION:-

Common questions

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Key milestones in the development and commercialization of flash memory include Dr. Fujio Masuoka’s invention of the technology at Toshiba in 1984, Toshiba’s announcement of NAND flash at the International Electron Devices Meeting in 1987, and Intel’s introduction of the first commercial NOR flash memory in 1988. These breakthroughs highlighted the potential of flash memory for high-speed, high-density storage, leading to its widespread adoption in diverse technological applications. Additionally, the development of removable NAND-based media formats, such as SmartMedia and the subsequent evolution of various memory card types, further propelled flash memory into mainstream usage .

The invention of flash memory by Dr. Fujio Masuoka revolutionized data storage technologies by providing a non-volatile memory solution that was both reprogrammable and durable. Its development led to the widespread use of flash in various devices due to its shock resistance and power efficiency, significantly impacting consumer electronics and computing devices. Intel’s introduction of NOR flash and Toshiba’s announcement of NAND flash opened up new possibilities for data storage, resulting in the evolution of compact and efficient memory cards and USB drives that dominate today’s storage solutions .

Phase-change memory might replace flash memory in future technology developments due to its potential to offer higher density non-volatile memory solutions that do not require electrical power to retain information. Unlike flash memory, which can degrade after extensive erase-write cycles, phase-change memory promises greater durability and speed, offering a more reliable and faster alternative for data retention. Such improvements cater to the growing demands for higher-performance storage in rapidly scaling electronics, indicating a strong potential for phase-change memory to become the preferred choice .

Flash file systems, such as Microsoft’s FFS2 and the Flash Translation Layer (FTL), optimize the performance of flash memory applications by managing the unique characteristics of flash memory, which include long erase times and block writing limitations. These file systems spread writes over the media, reduce wear by avoiding excessive erases, and manage data updates effectively by writing new copies of data to fresh blocks and remapping file pointers. This helps in maintaining the longevity and efficiency of flash memory devices, making them more suitable for regular use .

The primary differences between NOR and NAND flash memory are in their structure and operation. NOR flash cells are connected in parallel to the bitlines, allowing cells to be read and programmed individually, which enables high-speed random access and byte-level data handling . NAND flash cells, on the other hand, are connected in series, which means they handle data in small block sizes called pages, accessing data in a high-speed, sequential mode. This structure allows NAND flash to have higher storage capacity and endurance compared to NOR flash .

Flash memory's non-volatile nature means that it retains stored information even when disconnected from power, which is particularly advantageous for battery-powered devices that must conserve energy and preserve data during power fluctuations. This property, combined with flash memory’s fast read access times and good shock resistance, makes it ideal for applications in portable electronics like cell phones, digital cameras, and MP3 players, where sustained data integrity and device resilience are crucial .

The benefits of using flash memory in electronic devices include non-volatility (no power required to maintain stored data), fast read access times, durability against kinetic shock, temperature resistance, waterproof characteristics, and lower power consumption compared to other memory types . However, limitations include slower speeds compared to volatile DRAM, the requirement to erase data in blocks rather than individually, finite erase-write cycles, higher cost per byte relative to hard disk drives, and deteriorating performance with extensive rewrites .

In consumer devices, flash memory is used in notebook computers, digital cameras, PDAs, cell phones, GPS systems, electronic musical instruments, MP3 players, and TV set-top boxes due to its durability, low power consumption, and compactness . In industrial applications, flash memory is employed in security systems, military systems, embedded computers, solid-state disk drives, and networking products, chosen for its reliability, non-volatile nature, and ability to withstand harsh environments. The preference for flash memory in these diverse applications stems from its adaptable performance characteristics and physical resilience .

The Open NAND Flash Interface (ONFI) contributes to the standardization of NAND flash memory by developing a standardized low-level interface for NAND flash chips, which ensures interoperability between conforming devices from different vendors. The ONFI specifications include a standard physical interface (pinout), a standard command set for reading, writing, and erasing NAND flash chips, and a mechanism for self-identification. These standards help streamline manufacturing processes and enable broader compatibility across devices .

Advancements in multi-level cell (MLC) technology improve flash memory capabilities by allowing each memory cell to store multiple bits of information instead of just one. This is achieved by varying the number of electrons placed on the floating gate of a cell, thus increasing storage capacity without proportionally increasing the physical size of the flash memory chip. This makes fast, high-capacity storage solutions possible at a lower cost per bit .

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