2002 Human Energy Field Book
2002 Human Energy Field Book
0; F(A) |, = B00) = B (1 — yg"). (9.6) The field structure (9.5-9.6) defines the GDV-gram character as follows. Having dielectric penetrability of the inclusion ¢,, larger than that of the material €, (€,>e,), the inclusion develops an increase of the electrical field in the gas gap above it, Le. to a more intensive development of the discharge process in the given arca, while having &, <#, ~ to the electrical field weakening. Indced, investigating samples possessing €, > €, (metallic inclusion) a more intense illu- mination of the image carrier is observed in the defect area, Having ¢,€, with the egrowth, the field goes up at first, but rapidly approaches saturation. With the increase of the depth of the defect occurrence, its influence goes down quickly and under q=4 practically does not manifest itself in the example given (calculation parameters: €, = MO, £, = 5,4 = 0). Fig. 9.7 demonstrates electrical ficld spatial distribution (medium parameters: €, = 30, £, =5, q= 1). The figure shows that under &,>e,, moving away from the defect projection point, the field quickly goes down to its initial value, passing through the mini= mum at the defect's edges. Such a field structure leads 40 the increase of image contrast in the process Of fig. 97, Computer modeling of the electrical fieid spatial distribu- GDV-gram formation at the expense of ring area emer- gence (in the zone x/a = 2) with the reduced value of electrical field, ‘The calculations stated allow the character of electrical field distribution in the air gap lo be determined, depending on the presence of heterogeneities on the surface or in the volume of the subject investigated. The presence of the magnetic field vector causes the electrons’ trajectory curvature and the corresponding image distortion. The EMF distribution determines gas discharge development processes, which are given below.168 Herwsrn Coeigy Fick Mathematical modeling of the avalanche discharge development process ‘The dependencies of discharge current pulses and fluorescence explained above give a good fit with the Townsend (avalanche) discharge model [Granovsky, 1971]. This good fit allows using the Townsend mode! fora more detailed analysis of physical processes according to the given GDV form. ‘The emission of electrons by the cathode (i.e. by the studied subject) is one of the most importunt factors influencing the development and parameters of the electron avalanches. There- fore, this cathode electron emission is a question of special attention in the literature devoted to the GDV physical processes. As ruther high electrical field intensity is needed to receive the GDV images. supposition was expressed by Adamenko [1975]. that the autoelectronic emission (AEE) makes a decisive contribution to the formation of avalanches. More dettiled research, however, demonstrated that although under high electrical field intensities the AEE is really observed, it does not playa determining role, because it is also possible 10 receive images using the avalanche GDY technique in the absence of the AEE. For example, smooth dielectric surfaces were partice ularly investigated: the microprojections on these surfaces did not exceed 0.3 mem, i.e. the field amplification coefficient caused by roughness [Slivkov, 1972] was clase toone. A uniform illumi- nation from such subjects appeared under 10‘ V/cm, which is considerably lower than the AEE threshold equal to 10*V/em. Thus, the AEE can influence the process of the GDV-grams forma tion, however this emission process is not a determining one for all the cases. Specific conditions of the avalanche discharge under the GDV prevent experimental in+ vestigation of contributions by other electronic emission types to its development, Therefore, mathematical modeling of a development process for the avalanche discharge single act was performed. Analysis is implemented in a two-dimensional spatial approximation, as long us the task is axially symmetric. The z-axis is directed perpendicularly to the plane-parallel electrodes surfaces, the cathode is in z= point, anode —z=d. The initial self-consistent system of equations, analogous to the oné used in [Sahni, Lan- za, Howard, 1978}, includes four equations: dif + do,V fade, = cin, V, + Den fda? — En, (9.7) dn at + do Vfde = ain. V, — Ena. (9.8) dE/dz = efe,(n,— 9.) » (9.9) La o=eld I J (ny, 4ny dtd, (9.10) o% where (9.7, 9.8) — equations of continuity for the electrons and ions, (9,9) — Puaisson equation; (9.10)—equation describing the process of the discharges’ accumulation on the dielectric surfac- es of electrodes at the expense of electron and ion currents; n,, n, — concentrations of electronsChapter 9 169 and ions (in the functions of z und t}; V_(z,t)=V_ + 1 E(2.0) — electron-drift velocity; V (2,1) = mE(z.) - ion-drift velocity; V_, H1,. |, — constants, numerical values of which were selected according to the data [Granovsky, 1971; Mic, Kregs. 1960]; a, D, €—avalanehe multiplication coefficients, diffusion and recombination, correspondingly, depending on the electrical field inten- sity Elzst); o(z, t) — surface charge density on the diclectrics limiting the gap; €, — absolute dielectric penetrability; ¢— electron charge. In the case of metal cathode or anode, in the last equation, only one of the currents — clectron or ion — is taken into consideration, The surface charge being accumulated at every time moment influences ¢lectrical field distribution between the dielectric layers and the gus gap, which is allowed for in equation 9.9. The boundary conditions of emission of charges by the subject's surface are determined from the equations: nm /at |(Z=0)=n, + 79 (00) +¥,0,(0,) + ¥,B0.), an/at |¢Z=0) = 0. where, Y,, 'Y,— coefficients of jon-clectron emission (IEE) , photo-¢lectron emission (PEE) ‘and auito-electron emission (AEE), correspondingly; n,— background particles concentration. The analysis was carried out by way of computer numerical simulation according to the finite difference method using explicit path of control; the number of spatial mesh points (m) and time step were selected from the Kurant condition: tum /d<1. Parameters for ealcuilation: m=300- 500, r= 107" —107!! sec:. Bas— nitrogen, p= 760 mmHg, d= 107, 6, = em — dielectric layers’ thicknesses on the cathode and anode, correspondingly: constant, lin- eally growing or bipolar impulse voltage (values of parameters characteristic of the GDV conditions), Results of analysis provid- ed the time and spatial characteristies E a of electron and fon concentration, of clectrical field intensity, and of current and surface charge densities. as well. Fig. 9.8 gives a family of time characteristics of the discharge process. 0 As seen from the dats obtained, having J constant potential, applied to the elec- trodes, electrical field and system cur- rent have an impulse character, whieh is connected with the electrical charge accumulition on the dielectric surfaces. o Time length of the current pulseonthe 9 Of O3 0 O1 O3 [Link] half-height has 0.01 mesee order, time of the whole process development Fig. 9.8. Results of computer modeling. makes up 0.5 mesee order. with sepa- nite discharge pulses at 10” Hz frequency. Such qualitative estimations give good fit with the experimental data of ascillographic investigations. (2 tang 8a 129wo Hcwwien Energy Field TEE and PEE contributions to the development of the discharge were taken into account when the calculations were carried out. by way of variation of the cor- responding emission coefficients under boundary conditions in the range from 0.1 to0.00! [Dobrezov, Gomounova, 1978). It turned out that the IEE effeets the ampli- tude of the discharge current pulses only when gradual accumulation of positive vol- umetric charge is possible in the discharge gap, ie. under quite « long sequence of bipolar cycles of external voltage. The PEE influence upon the discharge, stipu- lated by the radiation from the discharge avalanche, appeared to be more signi cant, The PEE coefficient’s variation in the given range caused a pronounced change of both amplitude vatues and time conditions of the estimated characteristics (considering maintenance of their general Li pete ae i peop form), Consequently, a conclusion might be drawn that under the avalanche GD a determining role is played by the photoelectron emis- sion, although other types of emission might be observed under certain conditions. Mathematical modeling of the avalanche discharge process revealed another important factor influencing the avalanche development: the amplitude of the avalanche discharge current, and hence other estimated characteristics, significantly depend on the steepness of the voltage pulse leading edge, i.c. on the rate of the voltage rise (fig. 9.9), whereas the ignition potential remains unchanged (rising areas of curves in fig, 9.9 lie on one line). This phenomenon gives an Opportunity to explain the experimentally observed rise of amplitude of the discharge current impulses. ot fluorescence intensity under the increase of sinusoidal voltage frequency: with the rise of frequency the steepness of the leading edge of every voltage hall-period goes up. Thus, the model studied reflects the main aspects of the visualization process develop- ment, which is evidence for the validity of the notions developed. At the same time, some discrepancy between the experimental and calculation data was found, The experimental re- search revealed that under any d gap values, the average magnitude of an experimentally defined radius of illumination spot of single avalanche * significantly exceeds the diffusive radius of the electronic avalanche head, calculated based on the Townsend model for the avalanche discharge single act development. Measurements of GDV-grams of illumination of sensitive photo-material in the system of electrodes analogous to those given on fig. 9.6 has demonstrated the following. With d increase, size of decomposition single element r rises in accordance with the empirical depen-‘Chple 9 Ad? (fig. 9.10), where A and k are cmpirical coefficients: at the same time “tail- ing” is observed of the boundaries of decom- Position elements (fig. 9.11), Under d > 600 mem, photo-matcrial illumination attains “surclike"* character. This phenomenon dis- appears after the photo-emulsion layer is cov- ered with a transparent dicleetrie, which con- firms the hypothesis on the phoio-emulsion illumination in these arcas directly at the ex pense of electrodes, A supposition was proposed that this discrepancy is produced by the accumulation of negative charge on the dicleetric surface of the image carricr. The charge spot creates a potential, additively summing up with the 18 001 o. 1 Fig, 9.10. Dependence of an image element on modeling for a bell-shaped charge spat, 3 — same for gauss form of charge spat. outer potential, A tangential component of electrical field arises near the dielectric surface, stimulating widening of the discharge avalanche head, because the energy of electrons in the avalanche docs not surpass some tens of électron-volts and they are able to react to this field [Mic, Kregs, 1960), To substantiate this hypothesis an estimated model was developed. Analysis of the dielectric surface charge processes in the course ofthe GDV. Let us study the interaction of a single avalanche discharge with the surface of an isotropic non-polar dielectric, d, thick, located ona metal electrode [Korotkoy, 1985], Let us assume that a positive potential, in regard to the second clectrode, is applied to this elec- trode, ic. study the charging of the image ear- tier surface by the discharge electron current. Let us analyze the electron bunch, bombard- ing the surface from the gas discharge. On the dielectric surface the electrons form a charge spot; the created potential additively sums up with the potential established by the external voltage. If the energy of the electron bunch is not large ( for the avalanche electrons, ener- 110% Fig. 9.11, Hystograms of image density along the radii of the discharge image for different air gaps. a 1-01 mm; 2 — 0.3 mm; 3- 0.5 mm; 4-1 mm, gy does not exceed some tens of eV), they will deviate from a lincar trajectory under the influ. ence of Er-Z) field tangential component, rising with the increase of the dieleetric thickness. ThisHa Herwarn Euergy Field will cause the growth of the charge spot diameter relative to the bunch diameter, and: ingly, the E,(r2) further increases. The electrons move to the surface with v=pll drift speed, determined by the tion of the discharge spot and external field (jt, — electrons” mobility), having ably a component, defined by expression 9.1, which might also be written as follows: B= une 2 cen. ou where & — dielectric penctrability of the layer with d thickness. ‘The trajectory of the bunch clectrons is determined by the system of equations: duh =— 1, CE, (0) — dpirz Oz). ar/Ot == B(r2) =—j1, dp,(rzVaz.. (9.12) The first equation determines time r of the eleetron passing through the gap. Under! E, insignificant change with respect to the disruptive value in the discharge process (at expense of both external voltage and spot field), r changes weakly, therefore this magni might be regarded as constant in the first approximation. At the same time, as shown by the experimental data, the time of a single discharge aet development does not excced. 10? sec. it is Comparable with the time of a single electron avalanche flow through the intes sap. Therefore. carrying out the analysis, it might be considered that the radial electrical field, Sonditioned by the charge spot, does not change within the time of the electron avalanche flow, In addition, as compared with (9.11), the value of deviation of the electron fram the normal trajectory will be determined by this expression: | Besar = in. (9.13) Having Z=d, this expression evaluates the diameter of the charge spot on the anode int time point. Potential created by the round-form charge spot with a symmetrical charge distribution in regard to the axis, under the condition that d>>r, can be presented in cylindrical co-ordinates as follows [Zirlin, 1963}. Anz) = f eaf (4) expt- cez/r,) I (arr/r,) dex , (9.14) ® where r~ effective radius of the charge; J, ~ Bessel function; f(a) — amplitude of decompo: sition of the diclectric surface potential into the Fouirier-Bessel integral. Solving the given expressions, taking into account literature data, we receive an analyt- ical expression forr,, For example, having bell-shaped charge distribution in the spot in the form B=, (1 + rif)". we will receive the following equation after the integration from (9.14) having Z=d: Ona k=O," rr, + zie + Cr, + rane, . (9.15)‘Chuptes 9 as For the Gaussian-shaped charge spot s = sexp(rft,) we will get: (2) =270, 1 J, (krir,) expl-W/A)fch (kasr,) — shtkalr, vibiktd + d,)/r,)IFak: F=[e,chik/r,yth(kilr,) ~ (6,~ Iebikd/r, Mh(kCd + 9/74) —sh (kd /r,)I". (9.16) Having differentiated this expression with respect tor, Jet us substitute it into (9.14), and then, assuming that z =d and integrating, we will receive: 2 =| ISHA0,r/(, +d /4ne,e, + dP} — d? Ht =2no,(chik dir) —shik dirgathikid+d, Vey texpl-kiiek Ml (kit) dedk. (9.17) ‘The r,(d) dependencies built according to this formula are demonstrated by curves 2 and 3 in fig. 9.10 (under r= F,: 6, = 10° Coull*erm j4, = 100 em"/V*sec), As seen from the picture, by an order of magnitude 1, corresponds to the experimental data. For the Gaussian- shaped spot this. correspondence is even better. This fact indicates that the spot being formed has a shape similar to the Gaussian shape. It is also worth considering that r, characterizes the charge spot size in the f, time point. with the experimental data —in the t, tine point, while t.< t, Thus, the obtained equations enable evaluating the size of the charge spot practically over the whole d range studied. As follows from the comparison of the caleulated and exper- imental data, these estimations canfirm the hypothesis on widening the change bunch close to the surface under the influence of the tangential field component created by this spot. ‘The expressions obtained are also equitable for the case of interaction of ions with the dielectric surface. The ions” mobility is, however, approximately two orders smaller than that of the electrons, and the influence of the longitudinal electrical field only weakly tells upon the jons” movement. Because of the radiation diffusion in the gas, the size of the illumination spot might slightly exceed r.,. which is observed experimentally. Calculation of thermal power in the discharge and its influence upon the subject's state ‘As demonstrated by experimental research on the GDV process, initial heating of the subject's surface takes place, under a long-term voltage application or under high frequencies. in the course of visualizing a model subject. Therefore, to choose an optimal impulse recurrence nate and Lo estimate the extent of the method's invasiveness, it is necessury to evaluate the energetics: of thermal processes relating to the gas dischange development on the bio-subject’s surface. ‘The thermal effect exerted by the discharge upon the investigated subject's surface can be estimated with regard to the processes in the discharge gas column. For calculating this magnitude, let us evaluate the power evolved per the discharge volume unit. The energy trans- ferred in an electron-ion collision can be estimated as follows:7" Haasan Energy Field ah 2 if (9.18) Where m,.m, — electron and ion mass. correspondingly; v, — electron velocity. ‘The transferred power might be expressed as follows: fay aR =e, 22M, eC *dntv), (9.19) where dii(v) — number of particles in |v, v + dv] imerval; (it is implied that v — veetor, dv = [Link],dv,) Presenting da in the form , under the normalization condition 1 [hav=n,, (9.20) the following expression for the power might be obtained: rE “fav. (21) “i Me / [Link] Peller ys ‘To solve this integral, let us use ratios: dV =amv'dy , f=Cte 7%, —Marwell funetion, whence: Se = hy be 7 [fav=anc| vee WV ons anceii4+(s/.,) My O= ops fea) ) a1 conn)" mf a fo =n{ Voss | ReGen (9.22) here T, — electrons’ temperature. ‘Taking account of the received expressions, the expression for P might be rewritten: ‘We will get the estimation for, assuming that the electrical field is applied along the “x” coordinate and, accordingly, all the ionization goes in this direction. After a number af conver- ‘sions we will receive: : “v8 atio/ ami x2 of m, = v2 32 Se os oa ‘( oe) 6 im, Ome TE) sa Ae we ™ } . (9.24)‘Chapters QS Let us take the following values of magnitudes, typical of a weak-current discharge: Nye = LO" m™;m, = 10° kesd = 10° 7; E = 10°V J mr, therefore ne / 16 en? eyor!?/ Mnf, IO TOE LOT for 10" «(ea k= 10. The electron velocity is determined as: eka. / _ [eE/ 2 [1.610 v= PY = PFs 971077 + T, 9107 =9*10'K, =Vi0" =3*10°"/, reo" "10" AT = my? = 10 *9* 10" p=0.25*10" #10 #7" =0.025*(9*10')"* = 0.025*10° = 254, = 25°10? wen. Incase my, = 10" mi;T=10°K P=25°10~* wim’. As seen from the discussion, even under the maximum values of the parameters, the power evolved in the discharge is not cnough for any noticeable temperature influence upon the subject under a characteristic 10* sec influence time, However, the increase of these parame= ters by some orders makes the heat generation an important factor. Liquid Structurization in the process of GDV K. Korotkov, A. Korotkin. For understanding the process of obtaining information on the structure of liquids using GDV. the hypothesis was put forward that under the influcnee of an impulse electrical field with reversed polarity, micro-particles present in the liquid start precession movements, because of the polarization. These movements create spatial distribution of heterogeneity in liquid that may be registered by GDV. Let us caleulute this process fora cylinder of radii R, suspended in liquid at rest (fig-9.12). ‘The amplitude of oscillations a< in the Volume and at the surface of a liquid, influene- Fig. 9.13. Computer stimulation of the liquid ing parameters of the GDV-grams. scorer, penta bre. cocina paitictsms Hasmin Encegy Fold ‘These results create a conceptual basis for understanding results of GDV testing for different liquids. Natural biological liquids: blood. urine have some natural microparticles that polarize in an electric field, start oscillating and form an inhomogeneous structural distribution, influencing the GDV process, This is, of course, only one possible mechanism. Main informative characteristics of subjects found with the GDV12 technique Materials presented above demonstrate that under the GDY the information about the subject is transferred to an image produced by its influence on the discharge characteristics: intensity, duration, recurrence rate, and spatial distribution of separate avalariche acts, as well 1s spectral contents of radiation. The main informative characteristics of biological subjects arc: « Factors causing the change of electrical field in a discharge gap (for example, hetero- geneity of structure of surface or volume), Under equal concentration of the initiating particles in the areas with maximal clectrical field intensity, mostly avalanche discharges appear and develop more intensively as compared to the adjacent areas, Space or time heterogeneity of emission characteristics of subject’s surface. Both intensity of discharge act (PEE, EEE, in certain conditions (EE and AEE) and discharge reeur- fence rite (EEE) depend on it. We should note that an important role should be played by electrones kept in surface traps of the upper zone levels. © Space or time heterogeneity of self-gas emission (or evaporation) of subject's surface. It influences contents of gaseous medium in the gap and, correspondingly, imensity of discharge and specual contents of radintion. © Heterogeneity of subject's surface by electroconductivity or its change in time. Inten- sity of separate ucts of the discharge and their recurrence rate depend on it. © General impedance of electrical chain depending on electrical characteristics of the studied subject, its surface and volume; ull other parameters remaining constant. Analytical models presemed in this chapter. together with experimental data, allow the following conclusions for practical realization of the GDV method: * The character of physical processes within the network of « single discharge act does not practically depend on the form of the applied voltage, but is determined by the redistribution of electrical field in a discharge gap, owing to the accumulation of the surface charge on the boundary dielectrics and studied subject. * The established notions on the necessity of using high-frequency sinusoidal voltage for forming images are shown to be inconsistent. The discharge might be initiated and, respective- ly, the images might be formed practically under any type of voltage: constant, sinusoidal, or impulse. Choice of an optimal type of voltage is mainly determined by the conditions of minimal influence of the discharge process on the studied subject. = The application of a sequence of short voltage pulses appears to be optimal. Because the time for development of a discharge process requires only units of microseconds, durationChasfider 9 of voltage pulse ‘T, should be at least an order higher: Comparison of the GDV-grams received under Various durations of pulses demonstrated that under T, >1Smes and 'T, P,. where p,~ threshold of GDV-gram formation; p,— point of inflection, p, — threshold of satu- ration; C,, C, and $, ~ constants. Threshold values and constants depend on the configuration of a benchmark subject. Thus. the experimental data proved the given notions on the multi-phase character of the visualization process and the non-linear character for dependence of GDV-gram parameters on the volume electro-conductivity of a subject, For the estimation of electro-conductivity of a subject's surface, a direct experiment witha benchmark subject was performed [Korotkoy, Velichko, 1983]. Vanadium dioxide films, undergoing phasic transition: metal-semiconductor (PTMS) under the change of temperature, were selected as a benchmark subject. ‘The plan of this experiment is demonstrated in fig. 9.16. Vanadium dioxide film 2 is applied to ccralized plate I, glued 10 a massive metal plate 3. into which heater 4 is put, Temperature is measured by thermocouple chromele-alumele 5. Calibrated dielectric spacer 6 provides optimull size of spark gap (about 300 mcm) between the surface of the investigated sample 2 and quartz plate 7, to the outer surface to which transparent conducting coating 8 is applied. While applying voltage between electrodes 3 and 8, exceeding firing potential, avalanche gis discharge appears in the spark air gap. (A sinusoidal voltage with 400 Hz frequency and 1.2-2.1 kV amplitude was uscd in these experiments). The glow of this discharge is registered by a photomultipticr tube (PMT) 9. Vanadium dioxide film has electroconductivity jump (ap- proximately in 15-20 times) under phase transition metal-semiconductor 17-5 K wide and tem- perature hysteresis, Characteristics of PTMS were determined according to temperature de- pendencies of both light reflection factor with the wave-length 0.63 mem and electro-conduc- tivily using a four-probe method. In fig-9.17 the dependence of film resistivity VO, on temper- SUS mee 1 0 6 4 #08 4 6 8 10 ip Fig. 9.15. Shematic dependence of the GDV area on relative conductivity of the material.we Heaman nergy Fett Fig, 9.16, Scheme of the experiment (see details in the text). ature is shown by curve 1, The energy of activation for electro-conductivity in the semiconduc~ tor phase near transition is 0.23 eV. By investigating three different samples of film VO, with the GDV technique, it was revealed that the phase transition is reproducibly found according to temperature dependencies of the glow intensity (curve 2 fig. 9,17). The temperature interval of PTMS for forward trace of the hysteresis loop is equal to 347.5410 K. while for the reverse trace it is 327.525.0 K. These values have a good correlation with the data of direct measurements, although, according to the: estimation in as discharge, the area of PTMS is moved to higher temperatures. In control exper- iments carried out using cerimized plates without VO, layer. the value of PMT current in the range of 290-360 K practically did not depend on temperature. Changes of integral characteris- tics of glow were determined by the change of parameters of glow in every half-period of voltage: with the rise of temperature in the process of phase transition, amplitude, regularity and pulse- recurrerice rate increased. This was strongly manifested in half-periods, when negative potential, relative to grounded electrode, was applied to electrode 8. The observed change of characteristics of discharge under PTMS in the sample with surface limited by a discharge gap. is a direct experimental proof of the role of a subject's a een Yo oe Be. In the discussed ex- periment, both surface and 49 20 volume conductivity of the sample increases with the Py, growth of temperature under 10 LS 8 phase transition. Conse- quently, the speed of the /> _— 40 charge leakage grows. As demonstrated above, this leads to the rise of intensity 0,4 5 and reccurence rate of dis- 290 310 330 360 TK charge acts, The same re- Fig. 9.17. Temperature dependence of elecirocanductivity of VO, film (1) and GDV fluorescence intensity (2). sult is produced by the in- r ae -huapoler 9 ISS crease of speed of diffusion of charges applied to the grounded electrode along the side surface of a ceramized plate with the rise of temperature. ‘A certain part might also be played by the redistribution of voltage between the gas gap and dielectric layers produced by a change in diclectric penetrability of one of the layers. Structural heterogeneity of surface and volume As shown above, the presence of structural or surface heterogencities distorts the elec ical field above a subject’s surface, which can influence the distribution of discharge stream~ ers, For experimental testing of this data a series of physical models was produced, which included specially selected heterogencities-defects. The defects in dielectric were imitated by metal and dielectric threads 300, 200, 100, 30 mem in diameter and balls 100 mem in diameter, placed in the dielectric at different depths. The width of the dielectric layer above these defects varied in the number of layers of dielectric film G5 and 230 mem thick, glued to one another. ‘The glow was fixed on photo-film. After standardized processing (development and fixation), the photo-film was measured with a densitometer, which showed the curves of spacial distribu- tion inthe density of the image exposure (equal to the logarithm of the product of exposure time and the intensity of light falling on each point of the photo-film ). ‘The data received [Ban'kovsky, et al, 1982; 1986, Korotkoy, Hmirov, 1982] give an opportunity to estimate limit values of both a series of visualized parameters of the investigated subject (table 9.1) and characteristics of the received GDV-grams (table 9.2). Table 9.1. Limit values of some parameters of subjects revealed with the GOV. eee Minimal dimension of ledge on the metal surface, mem Minimal dimension of cavity on the metal surface, mcm 15-20 Minimal dimension of metal impurity in the dielectric at the depth of 100 mem, mem Heterogeneity of dielectric penetrability of non-metal subject, % Maximal occurrence depth (mn) of the visualized metal impurity in the dielectric (epoxy compound): | Ball 100 mem in diameter ‘Wire 100 mem in diameter | RE aces me ee Threshold value of resistivity of liquid, diffcring in GDV parameters from | <10" distilled water, Ohm/mwe Haman Eveigy Field Table 9.2, Limit values of image parameters, obtainable with the GDV. Contrast, % Minimal size of picture dot. mm Magnification degree Moisture of subject The presence of moisture both in the bio-subject's emission and in the atmospheric air influences the GDV processes. therefore this question is studied in detail in a series of works [Pehek et al, 1976; Zheveley et al., 1998], The processes of emission of electrons in the moist air under atmospheric pressure are investigated in the work [Chemov, 1975]. Emission currents were registered only in heteroge neous clectrical ficlds near cathode, and their magnitude depended on the air moisture. It is significant that the presence of walcr molecules in the discharge produces not only the formation of a double electrical layer, but also causes both direct and reverse plasma chemical reactions (more than 200) in the discharge [Shustow, Protasevich, 1999; Protasevich, 1989; 1999), In [Grig- oriev, Protasevich, 1998] it is shown that the speeds of condensation (and then coagulation) of water vapor (and water drops) are determined by squared electrical field intensity, Evaporation of moisture from the surface of plants or human skin leads to the decrease of partial pressure of Water vapor near the surface of the investigated subject. This causes distillation of moisture from the deeper lying layers 10 the surface, ie. makes for the drainage of a subject's surface. Simulta- neously, moisture evaporation causes additional cooling of the surface of the investigated subject. Thus, both processes of moisture exchange of a biological subject's surface and volume processes, mainly caused by dissociation of water molecules in gascous discharge, exert influ- ence upon the character of a discharge. Moreover, decay products of water molecules also influence the magnitude of ignition potential. Consequently, moisture tums out to be an important, however not the only informative feature of subject. As shown in [Jerman, Berden, Ruzic, 1996, Opalinski, 1979] and proved by ourexper- iments, placing a bio-subject (finger, plant) intoa rubber covering leads to the decrease of intensity of GDV-gram, but does not influence topographic peculiarities of the distribution of streamers. This statement is proved by the results obtained with the application of evacuated cameras [Korotkoy, Ban'kovsky, 1980; Korotkov et al, 1980). ‘The scheme of this experiment is given in fig. 9.18, A device, consisting of flat optical glasses 2, vacuum-compactly glued with a | mm gap, is placed onto the optical window of the GDV camera I. Tube 3 serves for air exhaust and letting-to-guses. The size of gap was select- ed by way of quantitative comparison of contrast and brightness of GDV-gram for test-sub- Jects with the gap varying from 0.55 to 1.5 mm. Gaps 0.8-] mm were optimal. Gas pressure