Controller PS5012-E12S
Features Specifications
•PCIe Gen 3x4 (Bandwidth: 8GT/s x4)
•Compatible with PCIe Gen I(2.5Gbps), Gen II(5Gbps), Gen III(8Gbps)
Host Interface
•Compliance with PCI Express Base Specification Revision 3.1
•Compliance with NVMe 1.3
•Dual-CPU architecture with built-in 32-bit microcontroller
Processor
•TSMC 28nm process technology
•Up to 8 Channels with 32 chips enable (CE)
•Flash transfer rate up to 667MT/s
•Capacity up to 8TB
Flash Controller
•Support 3D TLC and QLC NAND flash memory
•Compliance with Toggle 3.0 and ONFi 4.0
•Flash I/O operating voltage supply 1.2V/1.8V
•DDR3L (16 bit, 1600Mbps)
DRAM Controller
•DDR4 (8/16 bit, 1600Mbps)
•Phison 3rd generation LDPC ECC & RAID ECC
Data Reliability •DDR ECC engine
•End-To-End Data Path Protection
•AES 256 encryption engine
Security •Pyrite
•TCG OPAL 2.0
•Sequential Read up to 3400MB/s
•Sequential Write up to 3100MB/s
Performance
•4K Random Read up to 680K IOPS
•4K Random Write up to 670K IOPS
Power Management •L1.2 < 5mW
•Operating range: 0~70°C
Temperature Range
•Storage range: -40~85°C
Package •529-ball HSLFBGA, 12 mm x 12 mm
•Built-in internal thermal sensor
•GPIO pins
Peripheral
•Built-in UART function
•I2C and SPI for external ROM
THE DATA WITHIN THIS SPECIFICATION IS SUBJECT TO CHANGE BY PHISON WITHOUT NOTICE.
PERFORMANCE NUMBERS MAY VARY BASED ON SYSTEM CONFIGURATION AND TESTING CONDITIONS.
COPYRIGHT © 2020 PHISON ELECTRONICS, ALL RIGHTS RESERVED.
Solutions PS5012- E12S
256GB 512GB 1024GB 2048GB 4096GB
PCIe Gen3x4 NVMe 1.3
M.2 2280-S2, M2 2280-D2
3D TLC
3200 MB/s 3400 MB/s 3400 MB/s 3400 MB/s 3400 MB/s
1300 MB/s 2400 MB/s 3100 MB/s 3100 MB/s 3000 MB/s
210K IOPS 400K IOPS 680K IOPS 680K IOPS 580K IOPS
315K IOPS 600K IOPS 670K IOPS 650K IOPS 650K IOPS
Power 4
M.2 3.3V ± 5%
Active Read (Average) 5.2W 5.4W 6.5W 6.3W 7.7W
Active Write (Average) 3.2W 4.9W 5.6W 5.9W 6.6W
PS3 16mW 16mW 16mW 26mW 24mW
Low Power PS4 (L1.2) 2mW 2mW 2mW 2mW 2mW
Operating5
-40°C - 85°C
End-to-End Data Protection
Pyrite/OPAL Support
Thermal Monitoring
AHCI Support
3
Performance is based on Crystal Disk Mark 6.0.0 for sequential test and IOmeter for random test. Test size 1GiB. Test drive is set as secondary
4
Measured power consumption during sequential read/write test on Crystal Disk Mark 6.0.0
5
Operational temperature is measured by device temperature sensor
THE DATA WITHIN THIS SPECIFICATION IS SUBJECT TO CHANGE BY PHISON WITHOUT NOTICE.
PERFORMANCE NUMBERS MAY VARY BASED ON SYSTEM CONFIGURATION AND TESTING
CONDITIONS.
Solutions PS5012- E12S
500GB 1000GB 2000GB 4000GB 8000GB
PCIe Gen3x4 NVMe 1.3
M.2 2280-S2, M2 2280-D2
3D QLC
2000 MB/s 3400 MB/s 3400 MB/s 3400 MB/s 3400 MB/s
950 MB/s 1900 MB/s 3000 MB/s 3000 MB/s 2900 MB/s
95K IOPS 120K IOPS 250K IOPS 480K IOPS 600K IOPS
250K IOPS 500K IOPS 650K IOPS 680K IOPS 660K IOPS
Power 4
M.2 3.3V ± 5%
Active Read (Average) 3.4W 3.9W 4.4W 4.9W TBD
Active Write (Average) 3.3W 3.8W 5.4W 6.3W TBD
PS3 20mW 20mW 20mW 20mW TBD
Low Power PS4 (L1.2) 2mW 2mW 2mW 2mW TBD
Operating5
-40°C - 85°C
End-to-End Data Protection
Pyrite/OPAL Support
Thermal Monitoring
AHCI Support
3
Performance is based on Crystal Disk Mark 6.0.0 for sequential test and IOmeter for random test. Test size 1GiB. Test drive is set as secondary
4
Measured power consumption during sequential read/write test on Crystal Disk Mark 6.0.0
5
Operational temperature is measured by device temperature sensor
THE DATA WITHIN THIS SPECIFICATION IS SUBJECT TO CHANGE BY PHISON WITHOUT NOTICE.
PERFORMANCE NUMBERS MAY VARY BASED ON SYSTEM CONFIGURATION AND TESTING
CONDITIONS.
