F60UP30DN

F60UP30DN Pb
Pb Free Plating Product
60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers

TO-3PB(TO-3PN)
APPLICATION
Cathode(Bottom Side Metal Heatsink)
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS

Anode
PRODUCT FEATURE
Cathode
· Ultrafast Recovery Time
Internal Configuration
· Soft Recovery Characteristics Anode
Base Backside
· Low Recovery Loss
· Low Forward Voltage
—
· High Surge Current Capability
· Low Leakage Current

GENERAL DESCRIPTION
F60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

Absolute Maximum Ratings

Parameter Symbol Test Conditions Values Units
Repetitive peak reverse voltage VRRM 300 V

Continuous forward current IF(AV) Tc =110°C 60

A
Single pulse forward current IFSM Tc =25°C 600
Maximum repetitive forward current IFRM Square wave, 20kHZ 150
Operating junction Tj 175 °C

Storage temperatures Tstg -55 to +175 °C

Electrical characteristics (Ta=25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ. Max. Units
Breakdown voltage VBR,
IR=100µA 300
Blocking voltage VR
IF=30A 0.96 1.20 V
Forward voltage
VF
(Per Diode) 0.85 1.00
IF=30A, Tj =125°C

VR= VRRM 10
Reverse leakage
IR µA
current(Per Diode) Tj=150°C, VR=300V 100

Reverse recovery IF=0.5A, IR=1A, IRR=0.25A 35 45

trr ns
time(Per Diode) IF=1A,VR=30V, di/dt =200A/us 26 40
Thermal characteristics
Paramter Symbol Typ Units

Junction-to-Case RθJC 0.8 ℃/W

Rev.08T Page 1/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/

 F60UP30DN

Electrical performance (typical)

Forward Characteristic(typ.) Reverse Characteristic(typ.)

100.0
Ta=25 ℃ 10.0 Ta=25 ℃
Ta=125 ℃ Ta=125 ℃
Forward Current IF(A)

10.0 1.0

Reverse Current IR(uA)

0.1
1.0
0.0

0.1 0.0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 100
Forward Voltage VF(V) Reverse Voltage VR(V)

Package Information
TO-3PB PACKAGE

Dimensions(millimeters)
Symbol
Min. Max.
A 4.60 5.00
A1 1.30 1.70
A2 2.20 2.60
b 0.80 1.20
b1 2.90 3.30
b2 1.90 2.30
c 0.40 0.80
e 5.25 5.65
E 15.3 15.7
E1 13.2 13.6
E2 13.1 13.5
E3 9.10 9.50
H 19.7 20.1
H1 19.1 20.1
H2 18.3 18.7
H3 2.80 3.20
G 4.80 5.20
ФP 3.00 3.40

Rev.08T Page 2/2

© 1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/