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Deltasheet BTS 4141D – BTS 4501D

Smart Power High-Side-Switch

Ω
One Channel: 1 x 200mΩ
Features Product Summary BTS 4501D BTS 4141D
• Short-circuit protection Overvoltage protection Vbb(AZ 47 47 V
Operating voltage Vbb(on) 12...35 12...45 V
• Current limitation
On-state resistance RON 200 200 mΩ
• Overload protection
• Overvoltage protection (including load dump)
• Undervoltage shutdown with autorestart and hysteresis
• Switching inductive loads
• Clamp of negative voltage at output with inductive loads
• Thermal shutdown with restart
• ESD - Protection
• Loss of GND and loss of Vbb protection
• Reverse battery protection with external resistor
• Improved electromagnetic compatibility (EMC)
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Application
• All types of resistive, inductive and capacitive loads
• Current controlled power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power MOSFET with charge pump ground referenced
CMOS compatible input, monolithically integrated in Smart SIPMOS technology.
Fully protected by embedded protection functions.

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Deltasheet BTS 4141D – BTS 4501D

Block Diagram

+ V bb
Voltage Overvoltage Current Gate
source protection limit protection
ESD- V Logic
Diode
Voltage Charge pump Limit for OUT
unclamped
sensor Level shifter ind. loads Temperature
Rectifier sensor
R
in
IN Load
ESD Logic

GND mini-PROFET

Signal GND Load GND

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Pin Symbol Function

1 OUT Output to the load
2 NC not connected
3 Vbb connected with TAB
4 GND Logic ground
4 IN Input, activates the power switch in case of logic high signal
TAB Vbb Positive power supply voltage

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Deltasheet BTS 4141D – BTS 4501D

Maximum Ratings BTS4501D BTS 4141D
Parameter Symbol Values Values Unit
at Tj = 25°C, unless otherwise specified
Supply voltage Vbb -0,3...48 -0,3...48 V
Load current (Short-circuit current, see page 6) IL self limited self limited A
Continuous input voltage VIN -5,0...Vbb -5,0...Vbb V
Maximum current through the input pin ( DC ) IIN ±5 ±5 mA

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Inductive load switch-off energy dissipation1)2) EAS 8 tbd J
single pulse
Operating temperature range Tj -40 ...+ 125 -40 ...+ 125 °C
Storage temperature range Tstg -55 ...+150 -55 ...+ 150
Max. power dissipation (DC)1) TA = 25 °C Ptot 1.4 1.4 W
Electrostatic discharge voltage ( Human Body Model) EAS kV
according to ANSI EOS/ESD – S5.1 – 1993
ESD STM5.1 – 1998
Input pin ±1 ±1
All other pins ±1 ±5
Thermal resistance junction – case: RthJC 3 3 K/W
junction - ambient:1) RthJA 60 60
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1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for V
bb

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connection. PCB is vertical without blown air..
2) not tested, specified by design
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Deltasheet BTS 4141D – BTS 4501D

Electrical Characteristics BTS 4501D BTS 4141D
Parameter and Conditions Symbol Values Values Unit
at Tj = 25 °C, Vbb = 24 V unless otherwise specified min typ max min typ max
Load Switching Capabilities and Characteristics
On-state resistance
Tj = 25°C, IL = 0,5A RON -- 0,16 0,2 -- 0,15 0,2 Ω
Tj = 125°C -- -- 0,38 -- 0,27 0,32

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Nominal load current IL(nom) -- -- -- 0,7 -- -- A
Device on PCB1)
Turn-on time Tj = -40...125°C to 90% VOUT ton -- 60 100 -- 50 100 µs
Turn-off time Tj = -40...125°C to 10% VOUT toff -- 90 150 -- 75 150
Slew rate on dV /dton -- 2 4 -- 1 2 V/µs
10 to 30% VOUT Tj = -40...125°C
Slew rate off -dV/dtoff -- 2 4 -- 1 2 V/µs
70 to 40% VOUT Tj = -40...125°C
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air..
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Deltasheet BTS 4141D – BTS 4501D

Electrical Characteristics BTS 4501D BTS 4141D
Parameter and Conditions Symbol Values Values Unit
at Tj = 25 °C, Vbb = 24 V unless otherwise specified min typ max min typ max
Operating Parameters
Operating voltage Tj = -40...125°C Vbb(on) 12 -- 35 12 -- 45 V
Undervoltage shutdown Tj = -40...125°C Vbb(under) 7 -- 10,5 7 -- 10,5 V
Undervoltage restart Tj = -40...125°C Vbb(u rst) -- -- 11 -- -- 11 V

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Undervoltage hysteresis ∆Vbb(under) -- 0,4 -- -- 0,5 -- V
Standby current Ibb(off) µA
Tj = -40...tbd°C -- 10 20 -- 10 25
Tj = 125°C1) -- -- 100 -- -- 50
Operating current, VIN = high Tj = -40... 25°C IGND 0,5 1 1,5 tbd 1 1,6
Tj = +125°C 0,4 1,2
Leakage output current ( included in Ibb(off) ) IL(off) -- -- 2 -- tbd 10 µA
VIN = 0 V Tj = -40...125°C
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1) higher current due temperature sensor

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Deltasheet BTS 4141D – BTS 4501D

Electrical Characteristics BTS 4501D BTS 4141D
Parameter and Conditions Symbol Values Values Unit
at Tj = 25 °C, Vbb = 24 V unless otherwise specified min typ max min typ max
Protection Functions
Initial peak short circuit current limit IL(lim) A
Tj = -40°C -- -- 1,8 -- -- 1,9
Tj = 25°C -- 1,4 -- -- 1,5 --

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Tj = 125°C 0,7 -- -- 0,7 -- --
Output clamp (inductive load switch off) VON(CL) 47 53 60 47 53 60 V
at Vout = Vbb - VON(CL)
Overvoltage protection Vbb(AZ) 47 -- -- 47 -- -- V
Tj =-40...+125°C
Thermal overload trip temperature Tjt 135 150 -- 135 -- -- °C
Thermal hysteresis ∆Tjt -- 10 -- -- 10 -- K
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Deltasheet BTS 4141D – BTS 4501D

Electrical Characteristics BTS 4501D BTS 4141D
Parameter and Conditions Symbol Values Values Unit
at Tj = 25 °C, Vbb = 24 V unless otherwise specified min typ max min typ max
Input
Continuous input voltage VIN -3,0 -- Vbb -3,0 -- Vbb V
Tj = -40...125°C
Input turn-on threshold voltage VIN(T+) -- -- 2,6 -- -- 3,0 V
Tj = -40...125°C

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Input turn-off threshold voltage VIN(T-) 1,82 -- -- 1,82 -- -- V
Tj = -40...125°C
Input threshold hysteresis ∆VIN(T) -- 0,1 -- -- 0,3 -- V
Off state input current IIN(off) 20 -- -- 20 -- -- µA
Tj = -40...125°C
On state input current IIN(on) -- -- 110 -- -- 110 µA
Tj = -40...125°C
Input resistance RI -- -- -- -- 3 -- kΩ
Reverse Battery
Reverse battery1) -Vbb -- -- -- -- -- tbd V
Continious reverse drain current IS -- -- 1 -- -- tbd A
Drain source diode voltage -VON -- -- 1,2 -- 0,6 -- V
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1) Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode)
is normally limited by the connected load.

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Deltasheet BTS 4141D– BTS4501D

Package:

all dimensions in mm.

SOT 223:

6.5 +0.15 2.3 +0.05

-0.10
-0.10

5.4 ±0.1 B 0.9 +0.08

-0.04
A
1 ±0.1

1 ±0.1
0.8 ±0.15
(4.17)
6.22 -0.2

0...0.15
9.9 ±0.5

0.51 min

0.15 max
per side 5x0.6 ±0.1 0.5 +0.08
-0.04

1.14
0.1
4.56
0.25 M A B GPT09161

All metal surfaces tin plated, except area of cut.

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© Infineon Technologies AG 1999
All Rights Reserved.

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Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question please
contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.

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