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MEMS capacitive accelerometer: A review

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Artıbilim: Adana Alparslan Türkeş Bilim ve Teknoloji Üniversitesi Fen Bilimleri Dergisi 6(2), Aralık
2023, 41-58
Adana Alparslan Turkes Science and Technology University Journal of Science

MEMS capacitive accelerometer: A review

Cihat Ediz Akbaba*1, Mahmud Yusuf Tanrıkulu 1

1
Adana Alparslan Türkeş Science and Technology University, Department of Electrical-Electronics Engineering,
Adana, ORCID: 0000-0003-1078-4382, 0000-0001-7956-1289

Geliş Tarihi:06.11.2023 Kabul Tarihi:21.12.2023

Abstract

Micro-electro-mechanical systems sensors are integrated systems used in many fields such as consumer
electronics, the automobile industry, and biomedical, and their dimensions change between micrometers and
millimeters. MEMS capacitive accelerometers are the most widely used sensor type among MEMS accelerometer
sensors. As a result of the external force applied to the capacitive accelerometer sensor, the proof mass inside the
sensor moves, and the capacitive change is measured as an electrical signal using reading circuits. In this review
paper, general information about MEMS sensors is given, and a comprehensive review is made of MEMS
capacitive accelerometers. In the study, the dynamic circuit of the MEMS capacitive accelerometer is given, and
the calculation of the important values for the mechanical and electronic structure during the design of the
capacitive MEMS accelerometer is explained. In addition, information about the readout circuits used to convert
the capacitive change to voltage is given. Finally, the fabrication processes used to produce the final product are
explained, and the studies on sample fabrication processes found in the literature are mentioned.
Keywords: Capacitive accelerometer, MEMS accelerometer, MEMS capacitive accelerometer, MEMS devices

MEMS kapasitif ivmeölçer: Bir inceleme

Özet
Mikro-elektro-mekanik sistem sensörleri tüketici elektroniği, otomobil endüstrisi, biyomedikal gibi birçok alanda
kullanılan, boyutları mikrometre ile milimetre arasında değişen entegre sistemlerdir. MEMS kapasitif
ivmeölçerler, MEMS ivmeölçer sensörleri arasında en yaygın kullanılan sensör türüdür. Kapasitif ivmeölçer
sensörüne uygulanan dış kuvvet sonucunda sensörün içindeki kanıt kütlesi hareket eder ve kapasitif değişim,
okuma devreleri kullanılarak elektrik sinyali olarak ölçülür. Bu inceleme yazısında MEMS sensörleri hakkında
genel bilgiler verilmiş olup, MEMS kapasitif ivmeölçerler hakkında kapsamlı bir inceleme yapılmıştır. Çalışmada
MEMS kapasitif ivmeölçerin dinamik devresi verilmiş, kapasitif MEMS ivmeölçerin tasarımı sırasında mekanik
ve elektronik yapı için önemli değerlerin hesaplanması anlatılmıştır. Ayrıca kapasitif değişimi gerilime
dönüştürmek için kullanılan okuma devreleri hakkında da bilgi verilmiştir. Son olarak nihai ürünü üretmek için
kullanılan imalat süreçleri açıklanmış ve literatürde bulunan örnek imalat süreçlerine ilişkin çalışmalara
değinilmiştir.
Keywords: Kapasitif ivmeölçer, MEMS ivmeölçer, MEMS kapasitif ivmeölçer, MEMS cihazları

*
Sorumlu yazar (Corresponding author): Cihat Ediz Akbaba, edizakbaba@[Link].
Künye Bilgisi: Akbaba, C.E., Tanrıkulu, M.Y., (2023). MEMS Capacitive Accelerometer: A Review. Artıbilim: Adana Alparslan Türkeş Bilim
ve Teknoloji Üniversitesi Fen Bilimleri Dergisi, 6(2), 41-58. Doi: 10.55198/artibilimfen.1386846
Artıbilim:Adana Alparslan Turkes BTU Fen Bilimleri Dergisi
MEMS capacitive accelerometer: A review
1. Introduction to Micro Electro-Mechanical Systems (MEMS) Sensors
MEMS structures, called microelectromechanical systems in the USA and micro-machines in
Japan, are integrated systems consisting of both mechanical and electrical devices, developed using
batch processing techniques and varying in size from a micrometer to millimeter [1,2]. MEMS devices,
which are quite different from electronic and microelectronic circuits, consist of a combination of
electronic and mechanical parts [2]. MEMS accelerometers are widely used in electronic devices such
as automobiles, navigation systems, health applications, computers and mobile phones due to their
features such as small size, high resolution, stability and low power consumption [3,4]. The rapidly
developing MEMS technology has shown itself in many areas that can benefit humanity. For example,
with smart MEMS microsurgical systems, it is possible to perform surgery without any incision on the
skin, as well as to intervene in sick cells and tissues without damaging healthy cells [2]. Another example
of the use of MEMS is their use in vehicle airbags. MEMS accelerometers detect the change in
capacitance in sudden movement changes and create a signal ensuring the airbag works. Figure 1 shows
the common usage areas of MEMS systems [5].

Figure 1. Common usage areas of MEMS systems [5]

MEMS technology, which consists of a combination of mechanical and electronic systems uses
many of the techniques used in the integrated circuit field such as oxidation, diffusion, ion implantation,
LPCVD, and sputtering [6,7]. MEMS systems have 3 characteristics: miniaturization, batch fabrication,
and microelectronics [6]. Miniaturization enables the production of efficient and fast responsive
components, while multiplicity enables thousands of components to be produced simultaneously. On
the other hand, the microelectronics form the brain of the MEMS systems that enable sensors and
actuators to work systematically.

In this study general information about MEMS sensors is given, and a comprehensive review is
made about MEMS capacitive accelerometers. In addition, information about the readout circuits used
to convert the capacitive change to voltage is given. Finally, the fabrication processes used to produce
the final product are explained, and the studies on sample fabrication processes found in the literature
are mentioned.

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 Cihat Ediz Akbaba, Mahmud Yusuf Tanrıkulu
1.1. MEMS fabrication

Since the design and production of MEMS is complex, manufacturability design is very
important to reduce the time and effort spent on accurate production [8]. Fabrication of MEMS
structures often uses structural, sacrificial, and masking materials on a common substrate, so issues
related to etching selectivity, adhesion, microstructure, and a number of other properties are very
important parameters in the design process [9]. The main steps of the MEMS fabrication processes are
film growth, doping, lithography, etching, dicing, and packaging [6]. In addition, the properties of the
materials used as structural, sacrificial, and passivation layers in the fabrication stage of MEMS are very
important and these materials play an important role in the formation of final devices not only alone but
also as a result of their interaction with each other. In the MEMS fabrication process, materials such as
single-crystal silicon, polysilicon, silicon dioxide, silicon nitride, metals, silicon carbide, and diamond
are used [9]. Although most of the microfabrication methods used to fabricate MEMS structures are
borrowed from IC technology, specialized micromachining techniques for MEMS have been developed
[10]. In the production process of MEMS, techniques such as bulk micromachining, surface
micromachining, and LIGA processes are very popular.
1.1.1. Bulk Micromachining
Bulk micromachining which is the oldest micromachining technology enables the selective
removal of a significant amount of silicon from the substrate material to form shrunken mechanical
components [2,11]. Since etching speed is an important factor affecting efficiency in the bulk
micromachining technique, choosing the right methods during etching is very important [12]. By
utilizing the etching properties, complex 3D shapes such as channels, pyramidal pits, and roads can be
created [10]. In the wet bulk micromachining process which is the most commonly used technique, the
exposed areas of the substrate are etched at certain rates [2,13]. Figure 2 shows the release of SiC
material by etching silicon from the front and back of the wafer using the bulk micromachining
technique [14].

Figure 2. Bulk micromachining technique. a) Release of SiC material by etching silicon from the front side of
the wafer. b) Release of SiC material by etching silicon from the back side of the wafer [14]

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MEMS capacitive accelerometer: A review
1.1.2. Surface micromachining

The surface micromachining technique is the process of removing the underlying film called
the sacrificial layer without damaging the upper layer called the structural element. In this method,
microstructures are created by depositing, growing, and etching a series of thin films onto the substrate
[15]. In order for the micromachining process to be healthy, the structural material and the sacrificial
material must have appropriate properties. In addition, without affecting the structural material, the
etchers used to remove sacrificial materials should have very good physical and chemical etching
features [16]. Figure 3 shows the steps of a typical surface micromachining technique [10].

1.1.3. LIGA (Lithographic-Galvanoformung-Abform) process

Developed in Germany in the mid-1980s, LIGA is an abbreviation of the German words

lithographic, galvanoformung, abform, which translates as lithography, electroplating, and molding
[17]. Combining X-ray lithography with electroplating and molding, the LIGA process is a popular
technique for the fabrication of high aspect ratio microstructures [18]. Figure 4 shows an example LIGA
process [19]. In the LIGA technique, a resist layer is first applied to a metal-coated substrate. This resist
layer is then exposed to Ultraviolet rays by masking. In the last step, the parts of the resist layer that are
not exposed to UV rays are eliminated, and the final microstructure is reached.

Figure 3. The steps of a typical surface micromachining technique [10]

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 Cihat Ediz Akbaba, Mahmud Yusuf Tanrıkulu

Figure 4. Example LIGA fabrication process [19]

2. Accelerometers

Accelerometers which measure the acceleration applied to a mass have high sensitivity and it is
used in many fields from industry to scientific studies [20]. The acceleration sensor measures the
acceleration with the change of the test mass in it against the gravitational force (g=9.8 m/s2). These
sensors convert the mechanical movement created by the movement of the test mass into electrical
signal. It is possible to model accelerometers with a spring-mass-damper system. Figure 5 gives the
dynamic model and the free body diagram of an accelerometer [21]. Here, m is the proof mass, b is the
damping coefficient, and k is the spring constant. When the system is carefully examined, it can be seen
that the proof mass is attached to the base with a spring and damper. When a force is applied to the
accelerometer, while the proof mass moves, the spring and damper resist this movement. According to
Newton's second law, the sum of the forces acting on the object is equal to the product of the mass of
the object and its acceleration, and the equation of motion of the mass m is given in Equations 1. In
Equation 2, the differential equation of the system is given.

Figure 5. Spring-mass-damper system and free body diagram for an accelerometer [21]

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MEMS capacitive accelerometer: A review
mẍ ! + cẋ ! + kx! = F(t) (1)

d" x(t) dx(t)

m +c + kx(t) = ma#$% (t) (2)
dt " dt

When Laplace transform is applied to the system expressed by a quadratic equation, the transfer
function of the system can be found as in Equation 3. In the equation, w& is the resonant frequency and
the Q value is the quality factor. To obtain high mechanical sensitivity, the resonant frequency should
be chosen as low as possible. In addition, if the quality factor of the system is less than 0.5, the system
is over damped, if it is equal to 0.5, it is critically damped, and if it is greater than 0.5, it is under damped.
Under damped systems are preferred due to low mechanical noise and quick response time [21].

X(s) 1 1
= = w (3)
A#$% (s) s" + b s + k s" + & + w& "
m m Q

The most commonly used accelerometers are piezoelectric, piezoresistive, optical, and
capacitive accelerometers [5,22]. Piezoelectric accelerometers, which are frequently used in the civil
and aerospace industries and generally measure mechanical changes such as vibration and shock, use
the piezoelectric effect of certain materials to detect the change in acceleration [23]. Optical
accelerometers, working with the principle of moving the proof mass with the change in wavelength
caused by the change in light intensity have advantages such as high sensitivity and low noise compared
to conventional electrical accelerometers [24,25]. The capacitive accelerometers, one of the most used
accelerometers, senses the change in electrical capacitance to determine the acceleration of an object. In
capacitive accelerometers, the distance between the plates changes in proportion to the applied
acceleration. Thus, an electrical signal is produced in proportion to this change [26].

3. MEMS accelerometers

MEMS-based accelerometers are the fastest developing devices using MEMS technology, and
these devices have wide applications in many fields such as automotive, consumer electronics,
aerospace, biomedical, and robotics [3,27,28]. Figure 6 shows the usage areas of MEMS accelerometers
according to their bandwidth and acceleration range [29]. MEMS accelerometers used in most of these
applications have many advantages such as mass manufacturability, low cost production, small size, low
power, and easy system integration [30]. While one of the main advantages of a MEMS accelerometer
is its linear frequency response, it has disadvantages such as charging shortage and gravitational
acceleration being calibrated [31]. A typical MEMS accelerometer detects an external acceleration by
the displacement of a suspended mass attached to an anchor. Displacement sensing can be achieved
using techniques such as capacitive, thermal, piezoresistive, piezoelectric, and optical [32,33]. Among
these techniques, capacitive sensing technology is the most popular among MEMS accelerometer
techniques because of its ease of fabrication [31,32].

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 Cihat Ediz Akbaba, Mahmud Yusuf Tanrıkulu

Figure 6. Usage areas of MEMS accelerometers according to bandwidth and acceleration range [29]

4. Capacitive MEMS accelerometers

Capacitive accelerometers are extensively employed in the MEMS markets due to their simple
structure, low production costs, low power consumption, and low thermal dependence [28,34]. A
capacitive accelerometer using MEMS is typically a structure that uses a capacitor with a moving plate
placed between two fixed plate. When the total force is zero, the value of both capacitors is zero, when
there is a change in force, the moving plate will approach the fixed plate, which will increase the
capacitance value [35]. In Figure 7, the dynamic circuit of the capacitive accelerometer consisting of
spring, damping, and proof mass in the main structure is given [3]. Looking at the dynamic model, there
is the proof mass which is suspended in the central part and acts as a sensing element. The mass is
attached to the substrate by a spring with constant k $ and damping with a damping coefficient B$ . There
are capacitances between fixed fingers and movable fingers attached to the proof mass. When the proof
mass is subjected to acceleration, the movable fingers attached to the mass move, and this movement
produces an output as capacitive displacement. To measure the capacitance change, an electronic circuit
can be designed to convert this change into voltage [29].

Figure 7. The dynamic circuit of the capacitive accelerometer [3]

When the system accelerates, the proof mass moves and as a result of the displacement of the
moving fingers, the value of one of the capacitances increases while the other decreases. The magnitude

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MEMS capacitive accelerometer: A review
of the acceleration is calculated by measuring the capacitance values. As a result of the acceleration, the
values of the capacitances C1 and C2 are measured as in Equation 4 [36].

1 1
C1 = εnS ; =, C2 = εnS ; = (4)
d−x d+x

where, n is the number of movable fingers, epsilon value is the electrical conductivity between
the fingers, d is the distance between the fingers, x is the displacement due to acceleration, and S is the
surface area of a single finger.

In Equation 5, it is seen that the total force acting on the system is directly proportional to the
product of the mass of the object and its acceleration [37].

F' = ma = F( + F) + F* (5)

where, F' is the applied force, F( is the inertial force of the proof mass, F) is the force of the
spring constant, and F* is the damping effect. The expression of the displacement of the proof mass
subjected to the force in terms of a differential equation is given in Equation 6.

d" x dx
F' = M + B + kx (6)
dt " dt

Applying the Laplace transform to Equation 6, we can obtain Equation 7 and Equation 8, and
the transfer function of the system is as in Equation 9.

F' = MS" X(S) + BSX(S) + KX(S) (7)

F' = (MS" + BS + K)X(S) (8)

X(S) 1
= "
(9)
F' MS + BS + K

The final mathematical model of the capacitive accelerometer can be expressed as in Equation 10.

X(S) 1 1
= = ω (10)
F' B K s" + s Q& + ω& "
s" + s M + M

where, ω& is the resonant frequency and Q is the quality factor. At low frequencies, when
ω « ω& , we can write Equation 11 [38].

X(S) 1
= " (11)
F' ω&

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 Cihat Ediz Akbaba, Mahmud Yusuf Tanrıkulu

As can be seen from Equation 11, the sensitivity is inversely proportional to the resonance
frequency. Therefore, we can say that the sensitivity increases as the resonance frequency decreases. A
decrease in resonance frequency requires an increase in proof mass and a decrease in spring constant,
and with a decrease in this value, the sensor bandwidth also decreases [39]. In addition, parameters such
as resonance frequency, quality factor are related to sensor size.

The proof mass value is calculated as follows [37].

m = ρ(W+ L+ T+ + NW, L, t) (12)

where, ρ is the density of the material from which the proof mass is made, W+ is the width of
the proof mass, L+ is the length of the proof mass and T+ is the thickness of the proof mass. N is the
number of movable fingers. W, , L, , and t are the width, length, and thickness of the movable sensing
fingers, respectively.

In Equation 13, the expression of the spring constant of the system is given. Here, 𝑙- is the length
of the beam, ω. is the width of the beam, h is the thickness of the beam, and E is the Young's modulus
of the structural material. In order to get a good performance and sensitivity from the capacitive
accelerometer, it is very important to choose the parameters at the right value such as beam width and
beam length [38]. In addition, parameters such as the width and length of the movable fingers play an
important role in the accuracy of acceleration measurement [38].

1 ω.
K / = Eh( )0 (13)
2 𝑙-

The formula used to find the damping coefficient is shown in Equation 14 [40]. Here, 𝑁1 is the
total number of sensing fingers, n#22 is the effective viscosity of the air, and d4 is the capacitance gap.

h
B = 𝑁1 n#22 l. ( )0 (14)
d4

In a system with capacitive accelerometer, some readout circuits are needed to measure the
capacitive change after capacitive sensing takes place. There are some important parameters such as
signal to noise ratio (SNR), power consumption, and readout method in sensor reading circuits. SNR
value is very important for accurate measurement of physical quantity, and to obtain a higher SNR we
need to increase the signal power while reducing the noise power [41]. In addition, power consumption
and low supply voltage is very important as capacitive accelerometers are widely used in small devices
[42]. Since sensitivity is important when detecting, the values of the circuit elements should be chosen
correctly for readout circuits. Figure 8 shows the simplified readout circuit diagram of a MEMS
capacitive accelerometer realized by [43].

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MEMS capacitive accelerometer: A review

Figure 8. Simplified readout circuit diagram of a MEMS capacitive accelerometer [43]

In the given circuit, differential V'5 and −V'5 signals are applied to the electrodes. In case of a
capacitance mismatch between the two electrodes due to external acceleration, an electric current signal
is generated in the preamplifier stage and this signal is then converted to voltage. This voltage is then
filtered and demodulated by the passive RC high pass filter and then it is filtered again by the low pass
filter and the signal is applied as input to the PI controller. The output of the PI controller is
superimposed on the modulation signals and it is given as a feedback to the sensor to keep the proof
mass stable. This results in a high linearity performance for the accelerometer. In addition, the range
and noise values can be adjusted for different applications by adjusting the V!5 voltage applied equally
to both electrodes [43]. Capacitive displacement is converted to an analog signal thanks to the reading
circuit inside the accelerometer package, and this analog signal can be converted to a digital signal with
an ADC converter, if necessary.

5. Example fabrication and design studies for capacitive MEMS accelerometers

In the study by [44], a single axis MEMS differential capacitive accelerometer design was
carried out. The design process was performed using MEMS+, and the MATLAB Simulink environment
was used for simulation processes. A readout circuit was created to measure the capacitance change
caused by the displacement of the proof mass structure due to the applied acceleration. The reading
circuit consists of a capacitance-voltage converter, a demodulator, and a low-pass filter. In addition, it
is stated in the study that the designed accelerometer can be produced using the DRIE-based process.
The accelerometer designed according to the obtained simulation results showed high sensitivity and
good linearity. The 3D solid model and the reading circuit of the designed accelerometer are given in
Figure 9 [44].

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 Cihat Ediz Akbaba, Mahmud Yusuf Tanrıkulu

Figure 9. a) The reading circuit of the designed accelerometer b) The 3D solid model of the designed
accelerometer [44]

In study [39], a single-axis capacitive full differential accelerometer design with two proof
masses was carried out with the surface micro-machining technique. In the study, the proof mass
structure was electrically isolated and divided into two parts to show a fully differential feature.
Figure 10 (a) shows the general structure of the proposed accelerometer [39]. The designed sensor was
optimized and simulated using the COMSOL Multiphysics tool. In addition, some sensor capacitors are
embedded in the proof mass structure to increase sensitivity. In the fabrication stage, chemical vapor
deposition (CVD), electroplating, lift-off, and photolithography methods were used together with the
surface micromachining technique. Figure 10 (b) gives the fabrication process of the accelerometer [39].

Figure 10. Accelerometer general structure and fabrication process [35]

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MEMS capacitive accelerometer: A review
In study [45], a MEMS capacitive accelerometer specially designed for Structural Health
Monitoring (SHM) applications is presented. The IntelliSuite MEMS design tool was used for
simulations in the design performed using the surface micro-machining technique. The design and
simulation of the readout circuit used to convert the differential capacitance to voltage were carried out
with the SPICE circuit design program. Figure 11 gives the detailed fabrication process for the designed
accelerometer. When the fabrication process was examined, first of all, 1 µm thick Si3N4 material and 2
µm thick sacrificial material was deposited on the silicon substrate, respectively. Then, a 4 µm thick
polysilicon layer was formed with the LPCVD technique, and finally, the surface micromachined folded
beam-type accelerometer structure was obtained by removing the sacrificial layer.

Figure 11. Fabrication process for designed capacitive accelerometer [45]

In study [29], a MEMS differential capacitive accelerometer was designed and simulated using
8 µm UV-LIGA technology. Device simulation was performed using CoventorWare® and MEMS+
tools, and the simulation results are similar to the calculated results. According to the simulation results
obtained, the device showed good linearity at DC-400 Hz bandwidth. The designed accelerometer was
put into the fabrication process using UV-LIGA technology [46]. Figure 12 shows the fabrication flow
chart. When the figure is examined, copper was used as the sacrificial layer, nickel was used as the
structural layer, and the seed layer was sputtered to obtain the anchoring sites and the pattern was
created. Finally, the structural layer, Nickel, was grown using electroplating, and the Cu layer was
released after etching.
Study [47] presents a MEMS capacitive accelerometer with a symmetrical, double-sided, and
H-shaped beam structure. The fully symmetrical structure is produced using a double-layer SOI wafer
structure. Figure 13 shows the fabrication steps. When the figure is examined, after the H-shaped beam-
mass structure is defined as a mask, the wafer is oxidized and then photoresist coating is applied. Then,
after some scraping on both sides of the wafer, the photoresist is removed. With the onset of thermal
oxidation at high temperatures, a capacitive gap is defined on one side of the wafer. As a result of the
processes, MEMS capacitive accelerometer with a fully symmetrical double-sided H-shaped beam-mass
structure was produced.

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 Cihat Ediz Akbaba, Mahmud Yusuf Tanrıkulu

Figure 12. The fabrication process of the accelerometer designed using UV-LIGA technology [29]

Figure 13. Fabrication process for the presented accelerometer [47]

When the studies are examined, it has been observed that many parameters are important in
order to provide high performance when designing capacitive MEMS accelerometer structures. Table 1
gives the parameters obtained for the examined studies.

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MEMS capacitive accelerometer: A review
Table 1. Design parameters of capacitive accelerometers presented in examined studies

Ref [26] Ref [35] Ref [40] Ref [41] Ref [43]
Bandwidth 400 Hz not 100 Hz 0-250 Hz not given
given
Frequency range not given not not given 0-40 Hz 1.5 kHz-3
given kHz
Displacement 0.19 µm/g not 0.121 21.39 µm/g not given
sensitivity given µm/g
Capacitive 3.83 fF/g 15.8 225 fF/g 1.22 pF/g not given
sensitivity fF/g
Mechanical not given 29.8 0.12 µm/g not given not given
sensitivity µm/g
Voltage sensitivity not given not not given 1,783 V/g 0.24 V/g
given
Natural frequency not given not 1.5 kHz 100Hz- not given
given 500Hz
Resonance 1448 Hz 2870 Hz not given not given 2240 Hz
frequency
Electrical noise not given not 5 aF/√Hz 5.612 not given
given µg/√Hz
Quality factor 4 not not given not given 106
given

5. Conclusion

In this study, it is aimed to give a comprehensive perspective on MEMS capacitive

accelerometers. In addition, the structure, working principle, design parameters, and fabrication process
of capacitive accelerometers have been observed in detail. Design parameters such as bandwidth,
frequency range, sensitivity, electrical noise, quality factor for MEMS capacitive accelerometer sensors

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 Cihat Ediz Akbaba, Mahmud Yusuf Tanrıkulu
are compared within the studies in the literature. When the studies are examined extensively, it is
understood that MEMS capacitive accelerometer sensors are used widely MEMS market because they
have a simple structure, low production cost, low power consumption, and low thermal dependence.
Although there are various studies on capacitive accelerometers, it appears that the ultimate limit for
performance has not been reached. There is also a potential gap in the materials used for Accelerometers.
Studies on new materials and new process flows should be continued to increase the performance and
process efficiency of MEMS capacitive accelerometers.

Conflict of interest statement: There is no conflict of interest.

Research and publication ethic statement: The study does not require Ethics Approval.

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