INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3852
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·DC Current Gain-
: hFE= 200(Min)@ IC= 0.5A
APPLICATIONS
·Driver for solenoid and motor, series regulator and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage 80 V
VCEO Collector-Emitter Voltage 60 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current-Continuous 3 A
IB Base Current-Continuous 1 A
Collector Power Dissipation
PC 25 W
@TC=25℃
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~150 ℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon NPN Power Transistor 2SC3852
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 60 V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 50mA 0.5 V
ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA
IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 μA
hFE DC Current Gain IC= 0.5A; VCE= 4V 200
COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 50 pF
fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V 15 MHz
Switching Times
ton Turn-On Time 0.8 μs
IC= 1A; IB1= 15mA; IB2= -30mA;
tstg Storage Time 3.0 μs
VCC= 20V; RL= 20Ω
tf Fall Time 1.2 μs
isc Website：www.iscsemi.cn 2
