UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR
MEDIUM POWER LOW VOLTAGE
TRANSISTOR
FEATURES
*High current output up to 3A
*Low saturation voltage
*Complement to 2SB772S
1
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
TO-92
1:EMITTER 2:COLLECTOR 3:BASE
ABSOLUTE MAXIMUM RATINGS (Ta=25°C ,unless otherwise specified )
PARAMETERS SYMBOL RATING UNIT
Collector-base voltage VCBO 40 V
Collector-emitter voltage VCEO 30 V
Emitter-base voltage VEBO 5 V
Collector dissipation( Ta=25°C) Pc 0.5 W
Collector current(DC) Ic 3 A
Collector current(PULSE) Ic 7 A
Base current IB 0.6 A
Junction Temperature Tj 150 °C
Storage Temperature TSTG -55 ~ +150 °C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector cut-off current ICBO VCB=30V,IE=0 1000 nA
Emitter cut-off current IEBO VEB=3V,Ic=0 1000 nA
DC current gain(note 1) hFE1 VCE=2V,Ic=20mA 30 200
hFE2 VCE=2V,Ic=1A 100 150 400
Collector-emitter saturation voltage VCE(sat) Ic=2A,IB=0.2A 0.3 0.5 V
Base-emitter saturation voltage VBE(sat) Ic=2A,IB=0.2A 1.0 2.0 V
Current gain bandwidth product fT VCE=5V,Ic=0.1A 80 MHz
Output capacitance Cob VCB=10V,IE=0,f=1MHz 45 pF
Note 1:Pulse test:PW<300µs,Duty Cycle<2%
CLASSIFICATION OF hFE2
RANK Q P E
RANGE 100-200 160-320 200-400
UTC UNISONIC TECHNOLOGIES CO. LTD 1
QW-R201-024,A
UTC 2SD882S NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL PARAMETERS PERFORMANCE
Fig.2 Derating curve of safe
Fig.1 Static characteristics Fig.3 Power Derating
operating areas
150 12
-Ic,Collector current(A)
1.6
-IB=9mA
Power Dissipation(W)
- Ic Derating(%)
-IB=8MA
-IB=7mA
1.2 100 8
-IB=6mA S/
b
-IB=5mA lim
ite
D
0.8 d
is
-IB=4mA
si
pa
50 4
tio
-IB=3mA
n
0.4
lim
-IB=2mA
ite
-IB=1mA
d
0 0 0
0 4 8 12 16 20 -50 0 50 100 150 200 -50 0 50 100 150 200
-Collector-Emitter voltage(V) Tc,Case Temperature(°C) Tc,Case Temperature(°C)
Fig.4 Collector Output Fig.5 Current gain-
Fig.6 Safe operating area
capacitance bandwidth product
3 3 1 Ic(max),Pulse
10 10 10
0.
1m
10 1m
mS
S
Ic(max),DC S
Output Capacitance(pF)
FT(MHz), Current gain-
-Ic,Collector current(A)
VCE=5V
IE=0
bandwidth product
f=1MHz
2 2 0
10 10 10
IB=8mA
1 1 -1
10 10 10
0 0 -2
10 10 10
0 -1 -2 -3 -2 -1 0 1 0 1 2
10 10 10 10 10 10 10 10 10 10 10
-Collector-Base Voltage(v) Ic,Collector current(A) Collector-Emitter Voltage
Fig.7 DC current gain Fig.8 Saturation Voltage
3 4
10 10
VCE=-2V
-Saturation Voltage(mV)
VBE(sat)
FE
3
10
DC current Gain,H
2
10
2
10
1 VCE(sat)
10
1
10
0 0
10 10
0 1 2 3 4 0 1 2 3 4
10 10 10 10 10 10 10 10 10 10
-Ic,Collector current(mA) -Ic,Collector current(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R201-024,A
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