A1. a interstitial voids, interstitial voids ! !

ln Ω ln
are occupied, lattice sites, lattice sites ! ! ! !
are occupied ln ln ln
! !
The number of attainable microstates at interstitial ln ln 3 3
voids, ! ! ! ! ln ln
4 4
! Using Stirling's formula: 3 3
ln
Ω ln ln ln 4 4
! !
3 3 b
ln ln
The number of attainable microstates at lattice sites, 4 4
ln 1
! 3 3
Ω ln
! ! 4 4
1 ln
The total number of attainable microstates of the The energy of the crystal is let
crystal,
ln 1
! !
Ω Ω Ω
! ! ! !
Helmholtz free energy of the crystal is 3
The entropy of the crystal is 1 ln
4

1 ln 1 ln
3
1 ln 1 ln
4
1 2 3

ln ln
⟹ exp
3 ⟹
ln ln
4 4
2 ln ln ⟹ exp 7 exp exp 48 exp
4
3 8 1 exp
ln 4
4 ⟹ exp
3 7 4 For 0.2 , 320 ,
0.2 1.602 10
ln ⟹ 4 3 7 4 exp exp
1.38 10 320
0.000706325
⟹ 4 1 7 3 0
In thermal equilibrium, 0, 7 49 48 1 The fraction of atoms at interstitial sites is
⟹
8 1
7 √49 48 48
∴ ln 0 8 1 7 exp exp 48 exp
7 √ 48 8 1 exp
8 1
7 0.000706325 0.000706325 48 0.000706325
⟹ ln
81 0.000706325
cannot be negative: 0.022414133
⟹ exp 7 √ 48
⟹
8 1
7 √ 48
⟹
8 1
4 5 6
A2. a For one site one box: arrangements of
absorbed boron atoms gas in one box, no 1
ln 1
additional single particle states like Q3 , its fugacity
and Boltzmann factor are:
2 3
c The grand potential,
Number 4 5
of Chemical Boltzmann 1
Fugacity, energy Φ ln
boron potential factor,
atom ln 1
0 0 1 0 1 ln 1
1
ln 1
2 2 2
3 3 3
4 4 4 ln 1 2 3 4
5 5 5 1
Its grand partition function is

The entropy is
1 Φ 1 Φ Φ
, , ,
1
d
ln 1
b The grand partition of classical system is:

7 8 9

∑
2 1 1 7
∑
3 1 1 1 6 1
0 1 1 2 3 4 5
1 1 1 1 7
2
2 3 4 5 1 1 1 8
1
1 1 1 9
4 1 1 1 1 10
A3. (a) Fermions
Number (c)
of 4 For one site, ∑
∑
particles, 2 3
0 1 1 2 2
3 4
0 0 1 2

1 1 2 2
1 3 4
1 1 2 1 2
2
1 1 3
1 1 4
2 1 1 3
2 1 1 4
2 1 1 5 (b) For silicon wafer,
2 1 1 5
2 1 1 6

10 11 12