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Datasheet 2

The document details the specifications and features of the DSEI 2x 61 Epitaxial Diode (FRED) with a maximum reverse voltage of 200 V and a recovery time of 35 ns. It lists maximum ratings for various conditions, including forward current and thermal characteristics, along with applications such as snubber diodes and rectifiers in power supplies. The document emphasizes the diode's high reliability, low switching losses, and suitability for high-frequency switching devices.

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0% found this document useful (0 votes)
24 views2 pages

Datasheet 2

The document details the specifications and features of the DSEI 2x 61 Epitaxial Diode (FRED) with a maximum reverse voltage of 200 V and a recovery time of 35 ns. It lists maximum ratings for various conditions, including forward current and thermal characteristics, along with applications such as snubber diodes and rectifiers in power supplies. The document emphasizes the diode's high reliability, low switching losses, and suitability for high-frequency switching devices.

Uploaded by

hamzehdiab51
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Fast Recovery DSEI 2x 61 IFAVM = 2x 71 A

Epitaxial Diode (FRED) VRRM = 200 V


trr = 35 ns

miniBLOC, SOT-227 B
VRSM VRRM Type
E72873
V V

200 200 DSEI 2x 61-02A

Symbol Test Conditions Maximum Ratings (per diode)

IFRMS TVJ = TVJM 100 A Features


IFAVM ① TC = 85°C; rectangular, d = 0.5 71 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 800 A ●
International standard package
miniBLOC (ISOTOP compatible)
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 950 A
t = 8.3 ms (60 Hz), sine 1020 A

Isolation voltage 2500 V~

2 independent FRED in 1 package
TVJ = 150°C; t = 10 ms (50 Hz), sine 800 A ●
Planar passivated chips
t = 8.3 ms (60 Hz), sine 870 A ●
Very short recovery time
2
It TVJ = 45°C t = 10 ms (50 Hz), sine 4500 As2 ●
Extremely low switching losses
t = 8.3 ms (60 Hz), sine 4300 A2s ●
Low IRM-values
2

Soft recovery behaviour
TVJ = 150°C; t = 10 ms (50 Hz), sine 3200 As
t = 8.3 ms (60 Hz), sine 3140 A2s
TVJ -40...+150 °C Applications
TVJM 150 °C
Tstg -40...+150 °C

Antiparallel diode for high frequency
switching devices
Ptot TC = 25°C 150 W ●
Anti saturation diode
VISOL 50/60 Hz, RMS IISOL £ 1 mA 2500 V~ ●
Snubber diode

Free wheeling diode in converters
Md Mounting torque 1.1-1.5/9-13 Nm/[Link].
and motor control circuits
Terminal connection torque (M4) 1.1-1.5/9-13 Nm/[Link].

Rectifiers in switch mode power
Weight 30 g supplies (SMPS)

Inductive heating and melting

Uninterruptible power supplies (UPS)
Symbol Test Conditions Characteristic Values (per diode) ●
Ultrasonic cleaners and welders
typ. max.
IR TVJ = 25°C VR = VRRM 50 µA Advantages
TVJ = 25°C VR = 0.8 • VRRM 40 µA
TVJ = 125°C VR = 0.8 • VRRM 11 mA ●
High reliability circuit operation
VF IF = 60 A; TVJ = 150°C 0.88 V

Low voltage peaks for reduced
TVJ = 25°C 1.08 V protection circuits

Low noise switching
VT0 For power-loss calculations only 0.7 V ●
Low losses
rT TVJ = TVJM 3.0 mW ●
Operating at lower temperature or
RthJC 0.8 K/W space saving by reduced cooling
RthCK 0.05 K/W
trr IF = 1 A; -di/dt = 200 A/µs; VR = 30 V; TVJ = 25°C 35 50 ns
IRM VR = 100 V; IF = 60 A; -diF/dt = 200 A/µs 8 10 A
L £ 0.05 mH; TVJ = 100°C

① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
009

IXYS reserves the right to change limits, test conditions and dimensions

© 2000 IXYS All rights reserved 1-2


DSEI 2x 61, 200V

160 0.8 30
A TVJ= 100°C TVJ= 100°C
VR = 100V A V = 100V
140 µC R
Qr 25
120 0.6 IRM
IF
IF= 35A 20
100 IF= 70A
IF=140A IF= 35A
80 0.4 15 IF= 70A
TVJ=150°C IF=140A
60
TVJ=100°C 10
40 0.2
5
20
TVJ=25°C
0 0.0 0
0.0 0.4 0.8 1.2 V 10 100 A/ms 1000 0 200 400 600 A/ ms 1000
800
VF -diF/dt -diF/dt
Fig. 1 Forward current IF versus VF Fig. 2 Typ. reverse recovery charge Qr Fig. 3 Typ. peak reverse current IRM
versus -diF/dt versus -diF/dt

1.6 70 5 2.5
ns TVJ= 100°C TVJ= 100°C
VR = 100V V IF = 100A µs
1.4 60
Kf 4 2.0
trr VFR
tfr
1.2 50
tfr VFR
3 1.5
1.0 40
IF=35A
0.8 30 IF=70A
IRM 2 1.0
IF=140A
0.6 20

Qr 1 0.5
0.4 10

0.2 0 0 0.0
0 40 80 120 °C 160 0 200 400 600 A/ ms
800 1000 0 200 400 600 ms
A/800
TVJ -diF/dt diF/dt
Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Typ. recovery time trr Fig. 6 Typ. peak forward voltage VFR
versus TVJ versus -diF/dt and tfr versus diF/dt

1
Dimensions Dim. Millimeter Inches
Min. Max. Min. Max.
K/W
A 31.50 31.88 1.240 1.255
B 7.80 8.20 0.307 0.323
C 4.09 4.29 0.161 0.169
ZthJC D 4.09 4.29 0.161 0.169
E 4.09 4.29 0.161 0.169
F 14.91 15.11 0.587 0.595
G 30.12 30.30 1.186 1.193
0.1 H 37.80 38.20 1.489 1.505
Constants for J 11.68 12.22 0.460 0.481
ZthJC calculation: K 8.92 9.60 0.351 0.378
L 0.76 0.84 0.030 0.033
Rthi / (K/W) ti / (s) M 12.60 12.85 0.496 0.506
0.1000 0.00014 N 25.15 25.42 0.990 1.001
0.3400 0.00600 O 1.98 2.13 0.078 0.084
0.3600 0.16500 P 4.95 5.97 0.195 0.235
Q 26.54 26.90 1.045 1.059
DSEI 2x61-02
0.01 R 3.94 4.42 0.155 0.174
S 4.72 4.85 0.186 0.191
0.0001 0.001 0.01 0.1 1 s 10
t miniBLOC SOT-227 B T 24.59 25.07 0.968 0.987
U -0.05 0.1 -0.002 0.004
Fig. 7 Transient thermal impedance junction to case M4 screws (4x) supplied V 3.30 4.57 0.130 0.180
W 0.780 0.830 19.81 21.08

© 2000 IXYS All rights reserved 2-2

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