Integrated Circuits
Dr. Mohamed Abdel- Hamid
Electronics & Communications Engineering Department
Course Description
History and Technology of Integrated Circuits
Part I: Digital Integrated Circuits
Transistor Transistor Logic Families (TTL, STTL,) Emitter Coupled Logic Family (ECL) CMOS Family and Memories Low Power techniques
Part II: Analog Integrated Circuits
Modulators and Demodulators Voltage Controlled Oscillators Phase Locked Loops
References
A. B. Grebene, Bipolar and MOS Analog Integrated Circuit Design, John Wily,2003,New York. J. Smith, Modern Communication Systems, A. Sedra and K. Smith, Microelectronic Circuits, 5th Edition, Oxford, 2004. Lecture notes
Lecture 1 History and Technology of Integrated Circuits
Integrated Circuits
1961: TI and Fairchild introduce the first logic ICs ($50 in quantity) 1962: RCA develops the first MOS transistor
Fairchild bipolar RTL Flip-Flop RCA 16-transistor MOSFET IC
ComputerComputer-Aided Design
1967: Fairchild develops the Micromosaic IC using CAD Final Al layer of interconnect could be customized for different applications
Wafer Fabrication
Polycrystalline
Furnaces
Ingot
Slicing
Closer View Of Polishing
Silicon Wafers
Miller Indices
a is the lattice constant
Basic ICs Fabrication Processes
Oxide growth Thermal diffusion Ion implantation Deposition Etching Photolithography
Oxidation
The process of growing a layer of silicon dioxide (SiO2)on the surface of a silicon wafer. Uses:
Provide isolation between two layers Protect underlying material from contamination Very thin oxides (100 to 1000 ) are grown using dry-oxidation techniques. Thicker oxides (>1000 ) are grown using wet oxidation techniques.
(Thickness of SiO2 grossly exaggerated)
Diffusion
Movement of impurity atoms at the surface of the silicon into the bulk of the silicon - From higher concentration to lower concentration. - Done at high temperatures: 800 to 1400 C.
phosphorus oxychloride
Ion Implantation
The process by which impurity ions are accelerated to a high velocity and physically lodged into the target.
Require anneal to repair damage Can implant through surface layers Can achieve unique doping profile
Deposition
Chemical-vapor deposition (CVD) Low-pressure chemical-vapor deposition Plasma-assisted chemical-vapor deposition Sputter deposition Materials deposited
Silicon nitride (Si3N4) Silicon dioxide (SiO2) Aluminum Polysilicon
Etching
To selectively remove a layer of material But may remove portions or all of
o The desired material o The underlying layer o The masking layer
Two basic types of etches:
o Wet etch, uses chemicals o Dry etch, uses chemically active ionized gasses.
Selectivity: Anisotropy:
Photolithography
Components
Photoresist material Photomask Material to be patterned (e.g., SiO2)
Positive photoresist
Areas exposed to UV light are soluble in the developer
Negative photoresist
Areas not exposed to UV light are soluble in the developer
Expose
After Developing
After Etching
After Removing Photoresist
Metallization
Sputter on aluminum over whole wafer Pattern to remove excess metal, leaving wires
M eta l
Metal Thick field oxide p+ n+ n+ p substrate p+ n well p+ n+
Simplified Design Rules
Conservative rules to get you started
From Device to System
Packaging
The electronic product is like a human body. Electronic products have brains or microprocessors, and their packaging provides the nervous and skeletal systems. Without packaging, an electronic system is useless. It needs its packaging in order to be interconnected, powered and protected via its skeletal system.
Types of Packages
