PN Junctions
and Diodes
Anh Tuan Mai
Ideal Diode
Rectifier
• Diode to rectifier circuits
• Only lets through positive
voltages and rejects negative
voltages
HW: Build your own rectifier (half/full wave) ~ 12VDC, 6VDC, report in text and clip
Characteristics
of Junction
Diodes
• “Turn on” voltage based on
the “built-in” potential of the
PN junction
• Reverse bias breakdown
voltage due to avalanche
breakdown (on the order of
several volts)
Diode
Current
Equation
Movement of Carriers
Holes and e move through a semiconductor
1. Diffusion – random motion due to thermal
agitation from to a lower concentration
area; f([C])
2. Drift: due to an electric field applied across
a piece of silicon. The field accelerates the
carriers and acquire a velocity, called drift
velocity, dependent on a constant called
mobility µp,n
• Einstein’s relationship
Doping
• Intrinsic semiconductor: Cn=Cp. We can “dope” a semiconductor =>
greater [C]
• Dope e => n type, dope p => p type
• Doping ND concentration gives rise to nn0 free e, and doping NA
concentration gives rise to pp0 free hole in thermal equilibrium…
• In equilibrium, ID = IS (diffusion/drift current)
• Depletion region: hole that diffusion across the junction into the n region recombine
with majority carriers (electrons) and electrons that diffuse across into the p region
recombine with holes. This process leaves bound charges to create a net electric
field in the depletion region (no free carriers). Also called the space-charge region.
P-N Junction • The presence of an electric field means there is voltage drop across this
region called the barrier voltage or built-in potential
• The barrier opposes diffusion until there is a balance
• In equilibrium, ID = IS that occurs due to the (thermal) generation of hole electron
pairs
Ideal Diode
• Least accurate approximation
and represented by a simple
switch.
• Forward-biased, it ideally acts
like a closed/open (on/off)
switch.
• Although the barrier potential,
the forward dynamic
resistance, and the reverse
current are all neglected.
• This model is adequate for
most troubleshooting when
you are trying to determine if
the diode is working properly
Ideal Diode
• Includes the barrier potential. When FB, diode ~ closed switch in series with a
small equivalent
VF = 0.7 V (barrier) with the positive side toward the anode.
The Practical Diode • This equivalent voltage source, VF, represents the barrier potential that must
Model be exceeded by the bias voltage before the diode will conduct and is not an
active source of voltage.
• When conducting, a voltage drop of 0.7 V appears across the diode.
The Practical Diode Model
The forward current is determined as follows by first applying Kirchhoff’s voltage law
The diode is assumed to have zero reverse current, as indicated by the
portion of the curve on the negative horizontal axis.
• The most accurate approximation and includes the barrier potential, the small
forward dynamic resistance
and the large internal reverse resistance.
• The reverse resistance provides a path for the reverse current, which is included in
this diode model. When forward-biased ~ closed switch in series with equivalent VB
and the small forward dynamic resistance. When reverse-biased ~ open switch in
The parallel with the large internal reverse resistance. VB does not affect reverse bias, so
it is not a factor.
Complete
Diode
Model
• Since VB and R’d are included, the diode is assumed to have a voltage
across it when forward-biased. This voltage VF consists of the VB plus
the small voltage drop across R’d, as indicated by the portion of the
curve to the right of the origin. The curve slopes because the voltage
drop due to R’d increases as the current increases. For the complete
model of a silicon diode, the following formulas apply:
The
Complete
Diode • Ir is taken into account with the parallel resistance and is indicated by
the portion of the curve to the left of the origin. The breakdown
Model portion of the curve is not shown because breakdown is not a normal
mode of operation for most diodes.
• For troubleshooting work, it is unnecessary to use the complete model,
as it involves complicated calculations. This model is generally suited to
design problems using a computer for simulation. The ideal and
practical models are used for circuits in this text, except in the
following example, which illustrates the differences in the three
models.
Examples
Determine the forward voltage and
forward current for the diode for
each of the diode models (a). Also
find the voltage across the limiting
resistor in each case. Assume R’d =
10 ohm at the determined value of
forward current.
Examples
Determine the reverse voltage and
reverse current for the diode (b) for
each of the diode models. Also find the
voltage across the limiting resistor in
each case. Assume IR = 1 µA
CHECK POINT
1. What are the two conditions under which a diode is operated?
i. Current flow is permitted
ii. The diode is forward biased
2. Under what condition is a diode never intentionally operated?
i. When V>VF. For a silicon diode that is 0.6V to 0.7V at room temperature.
3. What is the simplest way to visualize a diode?
4. To more accurately represent a diode, what factors must be included?
i. barrier potential
ii. dynamic resistance
iii. forward resistance.
5. Which diode model represents the most accurate approximation?
✓complete diode model
• https://easierwithpractice.com/what-are-the-two-condition-under-
which-a-diode-is-operated/
