B 0800ECT201122002 G.
Reg No.: Name:
APJ ABDUL KALAM TECHNOLOGICAL UNIVERS
Third Semester B.Tech Dsgree Examination December 2021(2019
a
{rJi.:;-';1
Course Code: ECT201
Course Name: SOLID STATE DEVICES
Max. Marks: 100 Duration: 3 Hours
PART A
Answer all questions. Each question carries 3 marks Marks
1 State and explain law of mass action. (3)
2 Explain the concept of quasi Fermi level (3)
a
J State and explain the terms in Einstein's relation. (3)
4 Distinguish between drift and diffusion mechanisms. Write the expression (3)
for the corresponding currents
5 Explain Early effect and its impact on collector and base currents. (3)
6 Derive the expression for built in potential of a PN junction diode (3)
7 Draw the energy band diagram of a MOS capacitor at equilibrium, (3)
accumulation and strong inversion condition.
8 Explain the transfer characteristics of a MOSFET. (3)
9 Explain Drain induced barrier lowering? (3)
l0 Draw and label the structure of a FINFET (3)
PART B
Answer any onefull questionfrom each module. Each question carries 14 marks
Module I
Il (a) Define Fermi Dirac distribution function. Explain with relevant figures (10)
Fermi Dirac distribution of carriers in intrinsiCand extrinsic materials.
(b) The Fermi level in a Si sample at 300K is located at 0.3eV below the bottom (4)
of the conduction band. The effective density of states Nc:3.22xl01ecm-3
and Ny:l.83x10lecm-3. Determine (i) the electron and hole concentration at
300K (ii) the intrinsic carrier concentration at 300K
12 (a) An n-type Si sample with Na : 1015 cm-3 is steadily illuminated such that
Page I of3
0800ECT201122002
gop : 10't EHP/cm3s. If Tn: Tp : lps for this excitation, calculate the
separation in the quasi-Fermi levels, (Een -Erp).
(b) Illustrate the direct and iridirect recombination process of excess carriers in (7)
semiconductors
Module 2
13 (a) Explain Hall effect? Derive the expression for determining carrier (7)
concentration in a semiconductor bar using Hall effect. .
(b) (i) Show that the minimum conductivity of a semiconductor sample occurs (7)
when rlo- : rli]3
-r,l u" fiil What is the expression for the minimum conductivity
o6in? (iii) Calculate o*;,, for Si at 300 K and compare with the intrinsic
conductivity.
rl
14 (a) Derive the expression for drift current density, mobility of carriers and (8)
conductivity of a semiconductor.
(b) A Si sample with 10r5/cm3 donors is uniformly optically excited at room (6)
temperature such that l0le/cm3 electron-hole pairs are generated per second.
Find the separation of the quasi-Fermi levels and the change of conductivity
upon shining the light. Electron and hole lifetimes are both 10 ps. Dp : 12
cm2ls.
Module 3
15 (a) Draw the energy band diagram of a metal N type semiconductor with (e)
I
O* > @s under equilibrium condition and on biasing. Is the contact
rectifying or ohmic. Justify your answer.
(b) Assume that a. p-n-p transistor is doped such that the emitter doping is 20 (5)
times that in the base, the minority carrier mobility in the emitter is one-
fourth that in the base, and the base width is one-tenth the minority carrier
diffusion length. The carrier lifetimes are equal- Calculate o and B for this
transistor.
16 (a) Derive ideal diode equation. (8)
(b) A Schottky barrier diode is formed from n type Si of a doping l0r6cm-3 and (6)
area 10-3cm2. A Si PN junction has the same area and Ne:l0tn.--',
Nu:l016cm-3, rn:ro:lps. (i)Calculate the Schottky barrier diode current at
0.4V and 300K. (ii) Calculate the value of forward bias to obtain same
Page2 of3
0800ECT201122002
crrrent for a PN junction.[R*:ll0A/tr(2, Electron affinity of Si:4.15eV,
metal work function=4.9eV,Diffirsion constant: I 2cm2I sf
Module 4
17 (a) Draw and explain the cv characteristics of a Mos capacitor (g)
(b) For a long channel n-MOSFET with W: lV, calculate the V6 required for
(6)
an lolsat.; of 0.1 mA and Vo(*t.) of 5V. Calculate the small-signal output
- conductance g and the transconductance gm(sat.) at Vp: l0V. Recalculate the
. new Io for Vc - Vr: 3V and Vp : 4V.
18 (a) Draw and explain the drain characteristics and transfer characteristics of a (8)
(. MOSFET.
(b) An Al-gate p-channel MOS transistor is made on an n-tlpe Si substrate with
'!l
N6 : 5xlOtt c*-'. The SiOz thickness is 100 A in the gate region, and the (6)
effective interface charge Qi is 5 x l0r0 q Clcr and the work function
difference between metal and semiconductor is -0.15v. Find w-* , vFB ,
and Vlof the device.
Module 5
lg (a) Distinguish between constant voltage scaling and constant field scaling (8)
(b) Illustrate the operation of FinFET (6)
20 Explain any four short channel effects in MOSFET (14)
'F****
.t
Page 3 of3
