AMERICAN INTERNATIONAL UNIVERSITY–BANGLADESH (AIUB)
FACULTY OF SCIENCE & TECHNOLOGY
Summer 2024-25
ELECTRONIC DEVICES LAB: 01
Section: K (GROUP-3)
LAB REPORT ON:
Determination of Characteristic Curve of a Diode.
Supervised By
DR. EFFAT JAHAN
Submitted By: MD. SAIDUL ISLAM
Name ID
1. MD . SAIDUL ISLAM 22-49719-3
2. KAZI ABLAHA ANISHA 23-53134-3
3. A.M. SIFATUR RAHMAN 23-53286-3
4. DOLON SAHA 23-53460-3
5. SAZID ISLAM SHADHIN 22-48491-3
Date of Submission: July 30, 2025
Title: Determination of Characteristic Curve of a Diode.
Objectives:
The objectives of this experiment are to
1. Become familiar with semiconductor diodes.
2. Determine the characteristic curve of a semiconductor diode.
3. Find the different parameter values of a semiconductor diode.
Basic Theory:
Diode structure:
Joining together an n-type material made by doping with a pentavalent element and a p-type
material made by doping with a trivalent element, creates a semiconductor diode. Basically, it is
a p-n junction just like what is shown in Figure 1.
Diode Characteristics:
In forward bias condition, a cut-in voltage has to be overcome for the diode to start conduction.
In silicon, this voltage is about 0.7 volts. In reverse-bias condition, the current is limited to IS
(reverse saturation current). For higher value of reverse voltages, the junction breaks down.
Figure 3 shows the diode I-V characteristics.
Figure 2: Diode IV Characteristics
Circuit Diagram:
Figure 3: Circuit diagram for determining diode characteristic.
Apparatus:
• Diode
• DC Power Supply
• Resistor
• Multimeter
• Breadboard and Connecting Wire
Table:
Table No.1: Results of the experimental circuit
Source Voltage, Vs (V) Diode Voltage, VD (V) Resistor Voltage, VR (V) Diode Current, Id (mA)
0 0.00 0 0
0.1 0.19 0 0
0.2 0.26 0 0
0.3 0.32 0.06 0.006
0.4 0.37 0.11 0.011
0.5 0.39 0.16 0.016
0.6 0.41 0.24 0.024
0.7 0.42 0.33 0.033
0.8 0.43 0.41 0.041
Simulation Circuits and Results:
Simulation:
Figure No. 4.1: Simulated circuit in Multisim for 0.4V
Figure No. 4.2: Simulated circuit in Multisim for 0.7V
Figure No. 4.3: Simulated circuit in Multisim for 2V
Figure No. 4.4: Simulated circuit in Multisim for 15V
Answer all the Report Questions:
1. Plot the VD - Id characteristic curve for the diode and comment on the graph.
VD vs ID
16
14
12
10
8
ID
6
4
2
0
-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VD
Figure 7.1: Diode IV characteristics of the experimental circuit.
VD vs ID
16
14
12
10
8
ID(mA)
6
4
2
0
-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VD (v)
Figure 7.2: Diode IV characteristics of the Simulation circuit.
Comment on the graph:
• Both curves show the expected exponential relationship between diode voltage and current,
characteristic of a diode.
• The measured values show a slightly higher current for the same voltage compared to the simulated
values, indicating possible differences in diode characteristics or experimental conditions not accounted
for in the simulation.
2. What will happen if the polarity of the supply voltage is reversed in the case of using a diode
with a PIV of 4.8 V?
If the polarity of the supply voltage is reversed and it exceeds the Peak Inverse Voltage (PIV) of
4.8V, the diode will enter breakdown and conduct a large reverse current. This can potentially
damage the diode, leading to failure or destruction. For voltages below 4.8V, the diode will
block current flow as expected in reverse bias.
3. Discuss the overall experiment as a whole.
Overall Aspects:
• The experiment's results align reasonably well with the expected diode behavior. The exponential
rise in current with increasing voltage is evident in both measured and simulated data.
• The small discrepancies between measured and simulated values are within acceptable ranges and
can be attributed to real-world component tolerances, measurement inaccuracies, or simplifications
in the simulation model.
GRAPH:
VD vs ID
16
14
12
10
8
ID
6
4
2
0
-2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VD
Figure 5: Diode IV characteristics of the experimental circuit.
Figure 7.2: Diode IV characteristics of the Simulation circuit.
Picture:
Discussion:
After calculating the current through the diode for each voltage the table was completed. From
the calculated values it can be said that, at first the amount of current was very minimal. From
the VD vs ID Graph, it is noticeable that the flow of current increases insignificantly after every
increase in the voltage. But at 0.3V, a significant increase of the current can be noticed. Here at
0.3V from the power supply the voltage across the diode VD was 0.32V. So, the knee voltage/
threshold voltage of the diode is 0.32V.
From the graph of the simulated values almost the same result can be found. Also, in this case
the significant jump of the current can be noticed at input voltage 0.3V. Where the voltage
across the diode VD was 0.43V. In here the knee voltage/ threshold voltage of the diode is
0.43V.
The knee voltage from the measured data and the simulated data is 0.32V and 0.43V
0.43−0.32
respectively. There is only 0.32 . × 100% = 34.3% difference between two values. So, the
determination of the knee voltage/threshold voltage of the diode is fairly accurate.
References:
1. Robert L. Boylestad, Louis Nashelsky, Electronic Devices and Circuit Theory, 9th Edition,
2007-2008
2. Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Saunders College Publishing, 3rd
ed., ISBN: 0-03
051648-X, 1991.
3. American International University–Bangladesh (AIUB) Electronic Devices Lab Manual.
4. David J. Comer, Donald T. Comer, Fundamentals of Electronic Circuit Design, John Wiley &
Sons Canada, Ltd.,
ISBN: 0471410160, 2002.
