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About Designing Chebyshev Lowpass Filter

Design of Generalized Chebyshev Lowpass Filter with Defected Stripline Structure by Kuching, Malaysia

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0% found this document useful (0 votes)
10 views6 pages

About Designing Chebyshev Lowpass Filter

Design of Generalized Chebyshev Lowpass Filter with Defected Stripline Structure by Kuching, Malaysia

Uploaded by

rog1mor1
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

2013 IEEE Symposium on Wireless Technology and Applications (ISWTA), September 22-25, 2013, Kuching, Malaysia

Design of Generalized Chebyshev Lowpass Filter


with Defected Stripline Structure (DSS)
Z. Zakaria, M. A. Mutalib, M. S. M. Isa, A. A. Md Isa, N. A. Zainuddin and W. Y. Sam
Centre of Telecommunication Research and Innovation (CeTRI), Faculty of Electronic and Computer Engineering, Universiti
Teknikal Malaysia Melaka (UTeM), Hang Tuah Jaya 76100, Durian Tunggal, Melaka, Malaysia
zahriladha@[Link], ariffinmutalib@[Link]

Abstract—This paper presents the design of generalized higher stopband and can apply in harmonic suppression, but
Chebyshev lowpass filter (LPF) and integrated with Defected the bandwidth of stopband is wider compared to the DGS. G.
Stripline Structure (DSS) using Suspended Stripline Structure Yang et al. [12] introduce a wideband frequency with band
(SSS). The study involves circuit analysis to determine reject was produced at certain frequencies. The method that
generalized Chebyshev responses with a transmission zero at
they use is a meander line slot which produces a narrow
finite frequency in order to produce a reduced number of
elements values of prototype circuit. The LPF provides a cut-off notched band reject at desire frequency. However, this method
frequency at 6 GHz with a return loss better than -19 dB, while cannot reach the lower frequency which provides a frequency
the DSS exhibits a notch at frequency of 3.2 GHz with a stopband from 4 GHz to 8 GHz. To provide a lower frequency, a longer
response better than -40 dB. Thus, the integrated LPF and DSS structure is needed which increase the value of L1 to fulfill the
will produce lowpass and band reject response simultaneously. desired frequency. On the basis of DMS, the modified planar
The design is implemented on a Roger Duroid RO4350 with a transmission line with the DSS is proposed which can be
thickness of 0.168 mm and dielectric constant, of 3.48. The realized by the etching meander line slot on the signal pattern
simulation performance results show promising results that could of stripline. The slot on stripline disturb current distribution on
be proved in the experiment works. This new class of integrated
strip and grants the stopband characteristics in the frequency
LPF and DSS would be useful in any RF/ microwave
communication systems particularly in wideband applications response [13].
where the reduction of overall physical volume, weight and cost is In this paper, a new topology of integration between LPF
critical to maintaining its good performance. and DSS is presented. The LPF is designed at a cut-off
frequency of 6 GHz with minimum stopband insertion loss of
Keywords—Microwave filter; lowpass filter (LPF); bandstop 40 dB and minimum passband return loss of 20 dB. While, the
filter; Defected Stripline Structure (DSS); Suspended Stripline DSS is designed at a frequency of 3.2 GHz with a band reject
Strucutre (SSS). better than -40 dB with narrow bandwidth characteristics. The
I. INTRODUCTION overall topology is designed based on SSS to produce good
selectivity and low loss characteristics as well as exhibit
With the fast development of wideband wireless lowpass and band reject response simultaneously.
communication, LPF with characteristics of high performance,
low-cost, low insertion loss (IL) and compact LPF are highly II. DESIGN OF LOWPASS FILTER
desirable. For the next generation of wireless communication A systematic filter design starts with a classical lowpass
system, the integration of the LPF and DMS into one structure lumped element equivalent circuit or prototype [14]-[16]. It
brings many benefits especially in reducing the overall consists of series and shunt inductors and capacitors and their
physical volume of the RF systems [1]-[4]. In [5] below, the combination to form either series or parallel resonators.
multi-band filter was presented which uses 7th degree of The generalized Chebyshev has equiripple response in
Chebyshev based on lowpass filter prototype. However, this passband but with arbitrary placed transmission zeros in the
paper use coupling topology method to produce multi-band stopband offering selectivity nearly as good as the same
filter. The DMS with band reject response has the advantages degree elliptic filter. Generalized Chebyshev filter prototype is
in term of good frequency selectivity, low loss and simple more preferred due to the transmission zeros can be placed
circuit topology [6]. The DMS is made by defect the independently as accordance to design specification. Alseyab
conductor line of the structure and etching a narrow slot in the in [17] synthesize the element values for generalized
microstrip line. DMS is more easily integrated with other Chebyshev low pass filter prototype which can be used to
microwave circuits in order to reduce the size compared to transform into any filter response. The doubly terminated low-
DGS. In DMS, there is no etching in the ground plane and this pass prototype network satisfies the insertion-loss (IL) for the
avoids any incremental leakage through the ground plane. generalized Chebyshev response as described by:
Recently, DMS [6]-[8] and DGS [9][10] have been
proposed in the microstrip filters. The comparison between
DGS and DMS is shown in [11]. The DMS can produce

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Downloaded ©2013 IEEE
from [Link] 230
TABLE 2: COMPONENT VALUE
A OF LUMPED ELEMENTS
ω 1
IL 1 cosh N 3 cosh ω
ω ω Elements Value
= 0.54456 pF
3cosh ω
= 0.5836pF
(1)
= 1.432756nH
where the transmission zeros are of order (n-1)
( at ω
and one at infinity. N is an odd number equaal to the degree of = 0.718748nH
the network, 1.30526nH
10 RL⁄ 1
/ (2)
and RL is the minimum return loss level (dB) in the passband.
A. Design of Lowpass Filter
The device is constructed and simulatedd by using Roger
Duroid RO4350 with relative dielectric constant, 3.48,
substrate height, h = 0.168 mm. the thicknesss of copper 0.035
mm and the loss tangent is 0.019. The LPF with cut-off
frequency of 6 GHz with the degree, N = 7, the minimum
stopband insertion loss of -40 dB and minimum
m passband (
(a)
return loss of -20 dB are designed based on calculations in (1) 0
and (2). The elements values for the lowpass prototype network dB(S(1,1))

show in Table 1 with its corresponnding dB(S(2,1))

1.29516 / can be obtained in [17]. S-Parameter -20

TABLE 1: COMPONENT VALUE FOR PROTOTYPE LUMPED


U ELEMENTS
-40
Elements Value
C1 = C4 1.02647
-60
C2 = C3 1.10006
L1 = L3 1.08027
-80
L4 = L5 0.5419222 0 1 2 3 4 5 6 7 8 9 10
L2 0.9841477 f
freq, GHz
The lowpass prototype operates in system impedance of 1Ω ((b)
Fig. 1. (a) Seventh-degree generalizedd Chebyshev lowpass prototype network
and cut-off frequency of 1 rad/s. The next steep is to perform the (b) Simulated frequency response of thhe generalized Chebyshev lowpass filter
transformation to lowpass filter with 50 Ω from the lowpass
prototype using following equations [18]: B. Physical Realization
For realization, the lumpedd element lowpass filter is then
(3)
transformed to open- and short-circuit
s transmission line
segments by applying Richard’’s transformation [16].
(4) The Richard’s transformattion allows to replace lumped
inductors with short circuuited stubs of characteristic
By implementing Equation (3) and (4), values of each capacitor impedance and capacittors with open circuited stubs of
and inductors that operating in 50 Ω with cut--off frequency of 6 characteristic impedance 1⁄ . The resonator impedance
GHz can be calculated. can be represented as admittannce of an open circuited stub by
characteristic admittance ⁄2.
2
The element values of the equivalent circuit for lowpass
The length of the stub is one quarter wavelength at .
filter are shown in Table 2. The lowpass filtter circuit can now
Constant can be obtaiined by applying Richard’s
be seen in Fig. 1(a). The response of thee lowpass filter is
transformation at the band-edgee frequency . Thus
shown in Fig. 1(b). It is observed that the filter
f has a cut-off
frequency of 6 GHz which are in line with the design
1 (5)
specification.
and
1 (6)
tan

231
The structure of distributed element affter applying the where is the dielectric consstant of the medium and is
Richard’s transformation is shown in Fig. 2 (a). The values of the normalized static capacitance per unit length of the
short- and open-circuit stubs are shown in Taable 3. transmission line. If a transm mission line is suspended, the
normalized static capacitannce would include fringing
TABLE 3 : ELEMENT VALUE OF STUB ELEMENT
L
capacitance.
Elements Value (Ω) Elements Value (θ) 4 (8)
2
z1 120 E1 29.13
z2 29.78 E2 72.0 and
z3 55.55 E3 29.9 (9)
⁄2
The simulated results in Fig. 2 (b) show w an insertion loss
(S21) is almost 0 and the return loss (S11) bettter than -18 dB are where is ground plane spacing and is the thickness of the
obtained in the passband. conductor. For a printed circuitt, t is assumed as zero and hence

4 (10)
1.84

Therefore the line width of the stub, can be obtained as:

377 (11)
1.84
4

(a) where b is a ground planne spacing in mm and


0 characteristics of impedance linne. The length, of the 1st and
dB(S
S(1,1)) 7th open-circuit stub can be calcculated using:
-20
dB(S
S(2,1)) (12)
where 3 10 / and 1 4
S-Parameter

-40
The length of the remaining oppen-circuit stub resonator is two
times from the equation (12). The
T series short-circuit stubs are
set to 120 Ω impedance trannsmission line for the ease of
-60 fabrication. Hence, the lengthh, of the series short-circuit
stubs are calculated using:
-80
0 1 2 3 4 5 6 7 8 9 10 3 10 (13)
siin
freq, GHz
(b) 1, 2 3
Fig. 2. (a) Generalized Chebyshev lowpass distributedd filter (b) Simulated = element value of the compponent
frequency response of the generalized Chebyshev lowpwpass distributed filter

C. Suspended Stripline Structure (SSS) The SSS lowpass is moddeled, simulated and optimized
using ADS Momentum as shhown in Fig. 4 (a) and the
simulated response is shown in Fig. 4 (b). The simulated
results show in Fig. 4 (c) inseertion loss (S21) is almost 0 dB
and return loss (S11) better -18 dB are obtained in the
passband.

Fig. 3 : Suspended Stripline Structuure

This LPF is then fabricated using SSS (aas shown in Fig. 3)


in order to improve the overall filter performance.
p The
impedance of the SSS which is baseed on Tranverse
Electromagnetic (TEM) transmission line is related to its static
capacitance to ground per unit length as the following
f [18]: (
(a)

377
(7)

232
(
(b)
(b)
0

-20
S-Parameter

-40

-60
dB(S(1,1))

dB(S(2,1))

-80
0 1 2 3 4 5 6 7 8

freq, GHz
(c) (
(c)
Fig. 4 : (a) Layout of generalized Chebyshev lowpass filter (b) 3-D view of Fig. 5 : Photograph of suspended strippline structure lowpass filter (a) inside
Generalize Chebyshev lowpass filter (c) Simulated freqquency response of the (base – without lid) (b) overall filtter structure with lid (c) comparison
generalized Chebyshev lowpass filter in suspendedd stripline structure simulation and measurement
m result.

The filter is manufactured on rogeer substrate with III. DEFECTED STRIPPLINE STRUCTURE (DSS)
dielectric constant, 3.48 and thicknesss of the substrate, The DSS structure is prodduced by etching a slot in the
t=0.168 mm. The filter is then built bassed on suspended conductor layout and it conssists of horizontal slot and a
stripline structure (SSS) using aluminium as a shown in Fig. 5 vertical slot [6]. As well as the DGS structure, the DSS
(a) and (b). The roger substrate is suspendedd between the base increases the electrical length of the microstrip and disturbs
and lid of the aluminium block. The simulaated insertion loss the current distribution. With this electric length increment,
and return loss performances of the filter aree presented in Fig. the filter size can be reducedd. This DSS has no enclosure
5 (c), and compared with measured results. As can seen from problems compare with DGS S because there is no leakage
the Fig. 5 (c), a good agreement between thee measured and the through the ground plane [7]. Moreover, the DSS is easier to
simulated results has been obtained. The meeasurement shows integrate with other microwavee circuits.
that a cut-off frequency at 6.2 GHz is achieved with insertion In this study, the DSS is dessigned based on rectangular slot
loss (S21) is almost 0.3 dB and return loss (SS11) better than -15 with length, and width, etched in the middle of the
dB are obtained in the passband. conductor line. The shape of thhe DSS is called a meander line
slot which can produce a narrow notched band and at the same
time the whole circuit area wiill be reduced. Fig. 6 (a) shows
the meander line slot of DS SS and Fig. 6 (b) shows the
simulated results. The results show
s the notch response occurs
at 3.2 GHz with narrow bandw width. Thus, the characteristics
of narrow band notch respoonse will help to remove the
undesired signal in wideband applications. In this study, the
DSS will be integrated with lowpass
l filter based on SSS to
exhibit bandpass and band reject response simultaneously.
The layout for integrated the DSS and lowpass filter is
shown in Fig. 7 (a). Fig. 7 (b) shows the simulation results of
integrated of the DSS and lowppass filter. In Fig. 7 (c), it shows
(a) that the response produces a notch at 3.2 GHz within the
passband of the low pass filter.

233
IV. CONCLUSION
O
A new technique for the inntegration of DSS and lowpass
filter has been presented. The EM
E simulation shows promising
and excellent results. Thus thee study can be further explored
(a)
and validated by developing thhe prototype of integrated DSS
0
and lowpass filters based on SSS
S technology. This new class
of the integrated DSS and low wpass filter to produce lowpass
and band reject response sim multaneously in a single device
-20 would be useful in microwavee communication systems where
S-Parameter

the reduction of overall physsical volume and cost is very


important such as in a widebannd applications.
-40 ACKNOWLLEDGMENT
dB(S(1,1)) The authors would like to thank
t UTeM for sponsoring this
dB(S(2,1)) work under the shorrt term grant, UTeM,
-60 PJP/2012/FKEKK(11C)/S010115.
0 1 2 3 4 5 6
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