Solution

REVISION TEST - NUCLEI & SEMICONDUCTORS

Class 12 - Physics
Section A
1. (a) (M - Z)
Explanation:
Number of neutrons = Mass number - Atomic number = M - Z
2.
(c) nXm-4
Explanation:
α−decay 2β −decay
m m−4 m−4
n X −−−−−→
n−2
X−−−−−→ n X

3.
(d) (A)
Explanation:
The mass of α -particle is less than the sum of masses of two protons and two neutrons.

4.
(b) the potential barrier is raised.
Explanation:
the potential barrier is raised.

5.
(c) A vacancy created when an electron leaves a covalent bond.
Explanation:
A hole is the absence of an electron in a particular place in an atom.

6.
(b) high potential at n side and low potential at p side
Explanation:
In an unbiased p-n junction, the n-side is at high potential and p-side at low potential.

7.
(b) Both A and R are true but R is not the correct explanation of A.
Explanation:
Nuclear force is a powerful attractive force acts as long as the distance between particles is within 10-15 m. This force is charge
independent. But as distance increases, the effect of nuclear force rapidly falls. Electrons are distributed far away. The distance
is beyond the range of the nuclear force. Hence, nuclear force has no effect on electrons.
So, the assertion and reason both are true. But the reason does not explain the assertion.

8. (a) Both A and R are true and R is the correct explanation of A.

Explanation:
Both A and R are true and R is the correct explanation of A.
9. (a) Both A and R are true and R is the correct explanation of A.
Explanation:
In semiconductors the energy gap between the conduction band and valence band is small (1 eV). Due to temperature rise,
electrons in the valence band gain thermal energy and may jumpy across the small energy gap, (to the conduction band). Thus
conductivity increases and hence resistance decreases.

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 Section B
10. Three characteristic features of nuclear force which distinguish it from the coulomb force are:
i. They are short-range forces effective upto 2 - 3 fermi from a nucleon.
ii. They have charge independent nature.
iii. They show saturation effect i.e., a nucleon can interact only with a neighbouring nucleon.
OR
Mass of one atom of 12C
= 12amu = 12 × 1.66 × 10-27 kg
Energy equivalent of this mass is
E = m2 = 12 × 1.66 × 1(10-7 × (3 × 108)2 J
−11
12×1.66×9×10
= MeV
−13
1.6×10

= 11205 MeV
11. The total number of protons and neutrons present inside a nucleus is called its mass number (A).
The relation between the mass number (A) and radius (R) of the nucleus is
R= R A 0 where R = 1.1 × 10
1/3
0 m
−15

12. Intrinsic Semiconductor Extrinsic Semiconductor

Pure semiconductors not doped with any impurity Semiconductors are doped with trivalent or pentavalent impurity
1
atoms atoms.

2 ne = nh ne ≠ nh

13. a. C1 is n-type semiconductor and C2 is the p-type semiconductor.

b. Doping of intrinsic semiconductors is required to increase the majority of charge carriers based on which n-type and p-type
semiconductors can be made and thus can be used.
Section C
14. Given that,
Mass m( 40
20
Ca ) = 39.962591 u
Mass m( 41
20
Ca ) = 40.962278 u

Mass m( 26

13
Al ) = 25.986895 u

Mass m( Al ) = 26.981541 u
27
13

We know that,
Removal of one neutron ( n) from 1
0
41
20
Ca leads to the formation of 40

20
Ca ,
41 40 1
Ca → Ca + n
20 20 0

The mass defect of this reaction is given by,

40 1 41
Δm = m ( Ca) u + m ( n) u − m ( Ca) u
20 0 20

= 39.962591 u + 1.008665 u - 40.962278 u = 0.008978 u

We have, 1 a.m.u = 913.5 MeV/c2
Hence the energy required to remove neutron removal is given by,
E = Δ mc2 = 0.008978 31.5 c2 = 8.363007 MeV
MeV
×
2
c

We know that,
Removal of one neutron 1
0
n from 27
13
Al leads to the formation of 26
13
Al ,
27 26 1
Al → Al + n
13 13 0

The mass defect of this reaction is given by,

26 1 27
Δm = m ( Al) + m ( n) u − m ( Al) u
13 0 13

= 25.986895 u + 1.008665 u - 26.981541 u = 0.014019 u

We have, 1 a.m.u = 913.5 MeV/c2
Hence the energy required to remove neutron removal,
E = Δmc2 = 0.014019 MeV

2
× 931.5 c2 = 13.059 MeV
c

Hence, Energy required for removal of neutron is given by,

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 41
20
Ca = 8.363007 MeV
26

13
Al = 13.059 MeV
OR

a. Nuclear fission Nuclear fusion

It is the process of disintegration of a heavy nuclei into smaller It is the process of combining two lighter nuclei to
daughter nuclei of comparable masses with a release of huge amount of form a heavy nuclei with the release of huge
energy. energy.

It can be possible in nuclear reactors. It can be possible on the surface of sun.

Example 235
92
U →
142
56
Ba +
91
36
1
kr + 30 n + heat Example 2
1
H +
2
1
H →
3
2
He +
1
0
n + heat

It is a controllable process. It is uncontrollable process.

b. 2
1
H +
2
1
H →
3
2
+ 3.27 M ev
He +
1
0
n

when 2 atoms of deuterium ( H) combine energy released = 3.27 M ev

2
1

= 3.27 × 106 × 1.6 × 10-19J

= 5.232 × 10-15J
So, No. of atoms in 2g of deuterium = 6.022 × 1023 atoms
23
6.022× 10 ×100
No. of atoms in 100g of deuterium = 2

= 3.011 × 1025 atoms

So total energy released by fusion of 100g of deuterium
= 3.011 × 1025 × 5.232 × 10-15 J
= 15.75 × 1010 J
Power of bulb = 500 W
Energy consumed by bulb in 1 second = 500 × 1
500 J
10

So, time required to consume released energy = 15.75×10

500

= 0.0315 × 1010 sec

= 9.989 years
15. a. Isolated atoms have discrete energy levels. In a crystalline solid, due to the presence of large number of atoms, interatomic
interactions take place between atoms. Due to which, energy levels get modified to energy bands and we get band energy
levels.

b. Significance : The number of electrons/ holes per unit volume

increases in the donor/acceptor energy levels.

16. i. In figure (a), both the diodes D1 and D2 are forward biased and offer no resistance.

2.0 V
∴ Current in the circuit = 20Ω
= 0.1 A
ii. In Figure (b), diode D2 is reverse biased offers infinite resistance, so the current through the series circuit = zero.

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 iii. In figure (c), D1 and D2 are forward biased and offer zero resistance.

2.0 V
∴ Current in the circuit = 20Ω
= 0.1 A
iv. In figure (d), no current flows through D2 as it is reverse biased.

2.0 V
∴ Current in the remaining circuit = 20Ω
= 0.1 A
Section D
17. Read the text carefully and answer the questions:
Neutrons and protons are identical particles in the sense that their masses are nearly the same and the force, called nuclear force,
does into distinguishing them. The nuclear force is the strongest force. The stability of the nucleus is determined by the neutron-
proton ratio or mass defect or packing fraction. The shape of the nucleus is calculated by quadrupole moment and the spin of the
nucleus depends on even or odd mass numbers. The volume of the nucleus depends on the mass number. The whole mass of the
atom (nearly 99%) is centered at the nucleus.
(i) (a) all of these
Explanation:
All options are basic properties of nuclear forces. So, all options are correct.
(ii) (c) 1.4 × 10 −15
m
​
​
Explanation:
The nuclear force is of short range and the range of nuclear force is the order of 1.4 × 10-15 m. Now, volume ∝ R3 ∝
A
(iii) (d) strong nuclear force.
Explanation: strong nuclear force.
(iv) (a) Fn << Fe
Explanation:
Nuclear force is much stronger than the electrostatic force inside the nucleus i.e., at distances of the order of fermi. At
o

40 A, nuclear force is ineffective and only electrostatic force of repulsion is present. This is very high at this distance
because nuclear force is not acting now and the gravitational force is very feeble. Fnuclear ≪ Felectrostatic in this case.
Section E
18. i. The p-side or the positive side of the semiconductor has an excess of holes and the n-side or the negative side has an excess of
electrons. The two important processes are diffusion and drift. Due to concentration gradient, the electrons diffuse from the n
side to the p side and holes diffuse the p side to the n side

Due to the diffusion, an electric field develops across the junction. Due to the field, an electron moves from the p-side. The
flow of the charge carriers due to the electric field, is called drift

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 a. Depletion region:
It is the space charge region on either side of the junction, that gets depleted of free charges, is known as the depletion
region.
b. Potential Barrier:
The potential difference, that gets developed across the junction and opposes the diffusion of charge carries and brings
about a condition of equilibrium, is known as the barrier potential.
ii.

When the external voltage is increased the depletion region width decreases. At some particular voltage depletion region width
reduces to zero and the charged particles start crossing the junction. Thus current flows and this current increases with
increase in voltage.
OR
i. Here X is half-wave rectifier and Y is full-wave rectifier

ii. In case of a full wave rectifier during positive half cycle of ac, diode D1 is forward biased and diode D2 is reversed biased and
output is taken across the load resistance with a particular polarity. Whereas during negative half cycle of ac, the diode D2 is
forward biased and diode D1 is reverse biased, and again the output is taken across the load resistance with the same polarity.
iii. A capacitor of large capacitance is connected in parallel to the load resistor RL. When the pulsating voltage supplied by the
rectifier is rising, the capacitor C gets charged. If there is no external load, the capacitor would have remained charged to the
peak voltage of the rectified output.
However, when there is no load and the rectified voltage starts falling, the capacitor gets discharged through the load and the
voltage across capacitor begins to fall slowly.

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