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Midterm 3610 2023F

The document is a midterm exam for the EECS 3610 Semiconductor Physics and Devices course, authored by Professor Gerd Grau. It includes instructions for solving problems related to semiconductor physics, with specific constants and parameters provided for calculations. The exam consists of three questions covering topics such as p-n junctions, doping concentrations, and light absorption in semiconductors.

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15 views3 pages

Midterm 3610 2023F

The document is a midterm exam for the EECS 3610 Semiconductor Physics and Devices course, authored by Professor Gerd Grau. It includes instructions for solving problems related to semiconductor physics, with specific constants and parameters provided for calculations. The exam consists of three questions covering topics such as p-n junctions, doping concentrations, and light absorption in semiconductors.

Uploaded by

johnaa7354
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

Midterm-EECS 3610 Semiconductor Physics and Devices-Fall 2023

Professor Gerd Grau


Name:

Student ID:

Instructions: Unless otherwise noted on a particular problem, you must show your work. Underline your
answers to each problem with a double line. Simplify your answers as far as possible unless otherwise
noted. Be sure to provide units where necessary. Use the following values for constants:

𝑘 = 1.38 ∗ 10−23 𝐽/𝐾

ℎ = 6.626 ∗ 10−34 𝐽𝑠

𝑚0 = 9.109 ∗ 10−31 𝑘𝑔

𝑚𝑛 = 1.08 ∗ 𝑚0

𝑚𝑝 = 0.55 ∗ 𝑚0

𝑞 = 1.602 ∗ 10−19 𝐶

𝜀0 = 8.85 ∗ 10−12 𝐹/𝑚 = 8.85 ∗ 10−14 𝐹/𝑐𝑚

𝜀𝑆𝑖 = 11.9 𝜀0

𝐸𝑔 = 1.1𝑒𝑉 in Si

𝑁𝐶 = 2.8 ∗ 1019 𝑐𝑚−3 in Si at room temperature

𝑁𝑉 = 1.08 ∗ 1019 𝑐𝑚−3 in Si at room temperature

𝑛𝑖 = 1010 𝑐𝑚−3 in Si at room temperature

𝑐𝑚2
𝜇𝑛 = 1400 in Si for low doping densities
𝑉𝑠

𝑐𝑚2
𝜇𝑝 = 450 in Si for low doping densities
𝑉𝑠

𝜏𝑝 = 𝜏𝑛 = 10−6 𝑠 in Si

𝜒𝑆𝑖 = 4.05𝑒𝑉

Assume the material is silicon, all dopants are ionized and the temperature is room temperature unless
stated otherwise.

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Question 1 (19 points):

A p-n-junction contains an n-doped region with doping concentration of 1015cm-3 and a p-region with a
doping concentration of 1018cm-3. The diffusion constant for holes is 𝐷𝑝 = 12 𝑐𝑚2 /𝑠. If you make any
approximations in the following calculations, clearly state any assumptions or approximations you make.

a) Calculate (𝐸𝐶 − 𝐸𝐹 ) in the n-region.


b) Calculate 𝜙𝑏𝑖 .
c) Calculate the capacitance of the depletion region for a reverse bias of -0.75V.
d) Calculate the current density through the diode at a reverse bias of -0.75V.

Question 2 (21 points):

a) A silicon wafer has been doped with a boron concentration of 8*1015cm-3.


i. Calculate the electron concentration.
ii. Calculate the conductivity.
b) Now 2.2*1016cm-3 phosphorus dopants are added.
i. Calculate the hole concentration.
ii. Calculate the conductivity.
c) Repeat the calculation in a) i) but now the temperature is 400 K.

Use the below graph.

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Question 3 (19 points):

Light is shone onto the surface of an intrinsic semiconductor. All the light is absorbed right at the surface
of the semiconductor creating electron-hole pairs at a constant rate. For holes, you can model this
generation as a hole current density into the semiconductor 𝐽𝑖𝑛,ℎ = 15 𝑛𝐴/𝑐𝑚2 . The diffusion constant
is the same for both electrons and holes 𝐷 = 25 𝑐𝑚2 /𝑠.
a) Derive an expression for the excess hole concentration as a function of position x into the
semiconductor (x = 0 is the surface of the semiconductor, x increases into semiconductor).
Calculate the value of the excess hole concentration at x = 40 μm.
b) Derive an expression for the hole current as a function of position x. Calculate the value of the
hole current at x = 40 μm.

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