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MRF460

The ASI MRF460 is an NPN silicon RF power transistor designed for 12.5 Volt power amplifier applications up to 30 MHz, featuring a minimum power gain of 12 dB and 40% efficiency. It has maximum ratings including a collector current of 215 A and a power dissipation of 175 W at 25 °C. Key characteristics include a breakdown voltage of 40 V and a typical current gain of 20 at specified conditions.

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3 views1 page

MRF460

The ASI MRF460 is an NPN silicon RF power transistor designed for 12.5 Volt power amplifier applications up to 30 MHz, featuring a minimum power gain of 12 dB and 40% efficiency. It has maximum ratings including a collector current of 215 A and a power dissipation of 175 W at 25 °C. Key characteristics include a breakdown voltage of 40 V and a typical current gain of 20 at specified conditions.

Uploaded by

enrique
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

MRF460

NPN SILICON RF POWER TRANSISTOR


DESCRIPTION:
The ASI MRF460 is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.

FEATURES INCLUDE:
• Omnigold™ Metalization System PACKAGE STYLE .500" 4L FLANGE
• PG = 12 dB Min. @ 30 MHz & 40 W
• Efficiency 40%

MAXIMUM RATINGS
IC 215 A
VCBO 40 V
VCEO 20 V
VEBO 4.0 V
PDISS 175 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 1.0 °C/W 1 = COLLECTOR 2 = BASE
3 & 4 = EMITTER

CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCES IC = 100 mA 40 V
BVCEO IC = 100 mA 20 V
BVEBO IE = 5.0 mA 4.0 V
ICES VCE = 12.5 V 10 mA
hFE VCE = 5.0 V IC = 1.0 A 20 ---
COB VCB = 12.5 V f = 1.0 MHz 300 350 pF
GPE 12 15 dB
VCC = 12.5 V IC = 4.7 A POUT = 40 W (PEP)
IMD -35 -30 dB
f = 30 MHz
ηC 40 45 %

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.

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