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65nm CMOS Process Data Sheet

The document provides a data sheet for a 65nm CMOS process, specifically for analog IC design education. It includes key parameters for NMOS and PMOS transistors, capacitance values, resistances, and maximum current densities. The data is intended for teaching purposes and outlines various electrical characteristics relevant to the 65nm technology node.

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30 views1 page

65nm CMOS Process Data Sheet

The document provides a data sheet for a 65nm CMOS process, specifically for analog IC design education. It includes key parameters for NMOS and PMOS transistors, capacitance values, resistances, and maximum current densities. The data is intended for teaching purposes and outlines various electrical characteristics relevant to the 65nm technology node.

Uploaded by

rahul23.techfest
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd

65nm CMOS Process Data Sheet for the Analog IC Design Course

Parameters representative of a 65nm CMOS process, and intended only for teaching purposes

Transistor Parameters
Parameter NMOS PMOS Unit
Gain factor k'n = 440 k'p = 140 µA/V2
Threshold voltage (L = 0.2µm) Vt0n = 0.38 Vt0p = -0.37 V
Threshold voltage (L = 1µm) Vt0n = 0.30 Vt0p = -0.32 V
Body effect factor γn = 0.24 γp = -0.20 √
Surface potential 2ffn (= y 0) = 1.3 2ffp (= y 0) = -1.0 V
Channel length modulation 0.25 (strong inversion1) 0.25 (strong inversion1)
µm/V
|dXd/dVDS| @ L = 1µm 0.40 (weak inversion1) 0.35 (weak inversion1)
Channel length modulation 0.08 (strong inversion1) 0.08 (strong inversion1)
µm/V
|dXd/dVDS| @ L = 0.2µm 0.10 (weak inversion1) 0.12 (weak inversion1)
Subthreshold current Itn = 1.7 Itp = -0.45 µA
Subthreshold slope factor nn = 1.7 np = 1.5

Capacitances (layer to substrate)


Area (fF/µm2) Perimeter (fF/µm)
Gate oxide capacitance Cox = 12
Gate-diffusion overlap Col = 0.3
N+ diffusion (0V) Cj0n = 1.4 Cjswn = 0.04
P+ diffusion (0V) Cj0p = 1.8 Cjswp = 0.06
Poly Cp = 0.11 Cpp = 0.018
Metal 1 Cm1 = 0.098 Cm1p = 0.018
Metal 2 Cm2 = 0.062 Cm2p = 0.018
Metal 3 Cm3 = 0.033 Cm3p = 0.016
Metal 4 Cm4 = 0.022 Cm4p = 0.015
Metal 5 Cm5 = 0.017 Cm5p = 0.015
Metal 6 Cm6 = 0.014 Cm6p = 0.015
Metal 7 Cm7 = 0.009 Cm7p = 0.016
Metal 8 Cm8 = 0.007 Cm8p = 0.018

Resistances
Sheet resistances (Ω/□) Contact resistances (Ω)
Poly Rsp = 15 Contact Metal1 to below Rct = 38
Metal 1 Rsm1 = 0.13 Via MetalX to X+1, X=1..5 Rvia1-5 = 1.0
Metal2-5 Rsm2-5 = 0.11 Via MetalX to X+1, X=6..7 Rvia6-7 = 0.50
Metal6 Rsm6 = 0.040
Metal7-8 Rsm7-8 = 0.024

Maximum currents
Current densities (mA/µm) Contact currents (mA)
Poly Jp = 1.5 Contact Metal 1 to below Ict = 0.14
Metal1 Jm1 = 1.5 Via MetalX to X+1, X=1..4 Ivia1-4 = 0.16
Metal2-5 Jm2-5 = 1.8 Via Metal5 to 6 Ivia5 = 0.80
Metal6 Jm6 = 4.4 Via MetalX to X+1, X=6..7 Ivia6-7 = 3.0
Metal7-8 Jm7-8 = 8.0
1
Values suitable to find the output resistance of a transistor working in the active region (VDS=0.5V; Vov=0.25V
in strong inversion, Vov=50mV in weak inversion). Alternatively, the parameter a = |dXd/dVDS|/L is often
used for the same calculations.

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