TEE2027 Electronic Circuits

Metal Oxide Semiconductor Field Effect

Transistor (MOSFET)
 Introduction
o Operation of a MOSFET can be explained
using the operation of a capacitor
connected to a DC source.

o In MOSFET, a piece of metal is separated

from a semiconductor substrate by a thin
layer of oxide which is an insulator.
Metal Oxide Semiconductor  MOS

o The substrate can be either p-type or n-type

o Let us consider a p-type substrate to understand how a MOSFET works.
o We can extend those ideas to an n-type substrate.
 Introduction
Apply a voltage between the metal and the semiconductor:

o Holes in the p-type semiconductor o Holes are pushed away from the
are pushed towards the oxide- interface creating a negative space-
semiconductor interface charge region.
o A thin channel of electrons is enhanced underneath the oxide layer if the
voltage is applied as shown in the right-side image.
o This electron inversion layer can be used as a conductor.
 Introduction
Structure of n-channel MOSFET
o Three terminals: Gate, Source and Drain.
o The regions under the source and the
gate are heavily doped n-type for a p-
type substrate.
o These regions are heavily doped p-type
for an n-type substrate

o If the gate terminal is left open, the source

and drain are separated by a p-type region.
o Effectively two back-to-back diodes Source Drain

o No current when a voltage is applied

between source and drain (cut-off)
Substrate
 Introduction
Transistor Operation
o If large enough voltage is applied to the Gate
w.r.t. substrate, a channel is created.
o Positive gate voltage for p-type substrate and
negative gate voltage for n-type substrate
o Current flows if a voltage is applied between
the source and the drain.
o Depth of the channel and, hence, its conductance can be varied by varying
the voltage applied to the gate.
o Channel does not naturally exist in this case; it is created by the gate voltage
 enhancement mode MOSFET.
o In another type of MOSFET, the channel exists naturally, and its depth is
controlled by the gate voltage  depletion mode MOSFET.
 Circuit Symbol
N-Channel o The source is shorted to the substrate.
o Enhancement mode channel is shown using
broken line while depletion mode channel is
shown using continuous line.
Enhancement Depletion o The arrow is used to distinguish between n-
P-Channel channel and p-channel

Enhancement Depletion
ID
D Simplified symbol MOSFET
+
VGS: Gate voltage
Gate is insulated (used in this note)
+ VDS
- ID : Drain current
from the rest of
VGS -
G

VDS: Drain-to-Source voltage

the MOSFET. Gate
current is always S
0.
 ID-VDS Graphs
Threshold Voltage, VTH
o This is the minimum voltage required to create
the channel.
o If VGS > VTH, the channel is formed.

o With channel formed, if a voltage VDS is applied, a

ID current flows through the channel. VGS > VTH

o For small VDS, the current is proportional to

VGS2 > VGS1 VDS
VDS.
o If VGS is increased, the channel goes deeper
VGS1 > VTH
into the substrate reducing the resistance to
current flow.
VDS
VGS < VTH
 ID-VDS Graph
o For a given VGS,
o Beyond a certain value of drain-to-source
voltage VDS,sat, the current does not increase
significantly with increasing VDS.
VDS << VDS,sat
ID  VDS VDS = VDS,sat VDS > VDS,sat

Current still flows but

is not changed by
 ID-VDS Graph
D
iD + RD
RG
G
vDS
+ VDD
VGG vGS -
- S

For non-saturation region:

𝑖 𝐷 = 𝐾 𝑛 [ 2 ( 𝑣 𝐺𝑆 − 𝑣 𝑇 ) 𝑣 𝐷𝑆 − 𝑣 2𝐷𝑆 ] vGS > VT > 0

For saturation region:

The saturation voltage

2
𝑖 𝐷=𝑖 𝐷 , 𝑠𝑎𝑡 = 𝐾 𝑛 ( 𝑣 𝐺𝑆 − 𝑣 𝑇𝐻 )

Kn is called conduction parameter. VDS,sat increases with

Its value depends on the increasing
𝑉 𝐷𝑆 , 𝑠𝑎𝑡V=𝑉
GS. 𝐺𝑆 −𝑉 𝑇𝐻
geometrical dimension of the
channel, and capacitance of the
 ID-VDS Graph
Conduction parameter
𝜇 𝑛 𝑊 𝐶 𝑜𝑥
𝐾 𝑛=
2𝐿

W : width of the channel

L : length of the channel
o iD

Cox : oxide capacitance per unit area

o

n : mobility of electrons in the channel

o

region
o
[F (farad)] Channel
region

Thickness of the oxide layer

𝐶 𝜀 [F/m2]
Then capacitance per unit area: 𝐶 𝑜𝑥 = =
𝐴 𝑡 𝑜𝑥
 ID-VDS Graph
Conduction parameter
o If the datasheet does not give the value of Kn , how can we estimate it?
o Look for any ID value given for which VGS > VTH and VDS > (VGS – VTH).
𝑚𝐴
2
𝐼 𝐷 = 𝐾 𝑛 ( 𝑉 𝐺𝑆 −𝑉 𝑇𝐻 ) 1 .5= 𝐾 𝑛 ( 1 0 − 0.8 )
2
𝐾 𝑛=17.7
𝑉2
 Modes of operation
Assuming body is shorted to source, D
iD + RD
RG
and both are grounded. G
vDS
+ VDD
VGG vGS -
- S

Mode of Gate-to-Source Drain-to-Source Drain Current Applications

Operation Bias (vGS > 0) Bias (vDS > 0) (iD – into Drain)

Cut-off vGS < VTH N.A. iD = 0 CMOS Logic –

OFF state

Non- vGS  VTH vDS  vGS – VTH iD = f (vDS ,vGS) CMOS Logic –
saturation ON state

Saturation vGS  VTH vDS  vGS - VTH iD = f (vGS) Amplifier

 N-MOSFET & P-MOSFET
D
iD + RD VSG + S
RG
G RG - iS +
vDS G
+ VSD
VDD VDD
VGG vGS -
- S VGG -
D
RD

To create channel: 𝑉 𝐺𝑆 > 𝑉 𝑇𝐻 To create channel: ¿𝑉 𝐺𝑆 ∨¿∨𝑉 𝑇𝐻 ∨¿

For non-saturation region: For non-saturation region:
𝑖 𝐷= 𝐾 𝑛 [ 2 ( 𝑣 𝐺𝑆 − 𝑉 𝑇𝐻 ) 𝑣 𝐷𝑆 − 𝑣 2𝐷𝑆 ] ¿ 𝑖 𝐷∨ ¿ 𝐾 𝑝 ¿

For saturation region: For saturation region:

2
𝑖 𝐷=𝑖 𝐷 , 𝑠𝑎𝑡 = 𝐾 𝑛 ( 𝑣 𝐺𝑆 − 𝑣 𝑇𝐻 ) ¿ 𝑖 𝐷 ∨ ¿∨ 𝑖𝐷 , 𝑠𝑎𝑡 ∨¿ 𝐾 𝑝 ¿ ¿
Condition for saturation: Condition for saturation:
𝑣 𝐷𝑆 ≥ 𝑣 𝐺𝑆 −𝑉 𝑇𝐻 ¿𝑣 𝐷𝑆 ∨≥∨𝑣 𝐺𝑆 ∨−∨𝑉 𝑇𝐻 ∨¿
 MOSFET: DC Circuit Analysis
Device parameters: VTH = 1 V, Kn = 0.1
mA/V2.
5V

Calculate ID and VDS of this enhancement

30 kΩ 20 kΩ mode n-channel MOSFET.

20 kΩ
 Large Signal Model (Saturation Region)
o For an n-channel MOSFET in the saturation region, i.e.,
𝑉 𝐺𝑆 > 𝑉 𝑇𝐻 and 𝑉 𝐷𝑆 ≥𝑉 𝐷𝑆, 𝑠𝑎𝑡 =𝑉 𝐺𝑆 −𝑉 𝑇𝐻

o As there is no gate current: 𝐼 𝐺= 0 Open circuit between gate & channel

o The drain current is controlled by gate-to-source voltage

2
𝐼 𝐷 = 𝐼 𝐷 , 𝑠𝑎𝑡 = 𝐾 𝑁 ( 𝑣 𝐺𝑆 −𝑉 𝑇𝐻 ) Dependent current
source
D IG = 0 ID
G D
ID + +
IG = 0 + VGS VDS Kn (VGS - VTH)2
G VDS
is equivalent to - -
+ -
VGS IS
- IS
S
S
(vGS – VTH) is also known as the Gate-Overdrive, and it is also the minimum vDS to keep the MOSFET in the saturation region.
Large Signal Model (Non-saturation Region)
For an n-channel MOSFET: 𝑣 𝐺𝑆 >𝑉 𝑇𝐻 , 𝑣 𝐷𝑆 <𝑣 𝐷𝑆, 𝑠𝑎𝑡 =𝑣 𝐺𝑆 − 𝑉 𝑇𝐻

o Drain current: 𝐼 𝐷 = 𝐾 𝑁 [ 2 ( 𝑉 𝐺𝑆 −𝑉 𝑇𝐻 ) 𝑉 𝐷𝑆 −𝑉 2𝐷𝑆 ]

o For small VDS, we can neglect the square term: 𝐼 𝐷 ≈ 2 𝐾 𝑁 ( 𝑉 𝐺𝑆 − 𝑉 𝑇𝐻 ) 𝑉 𝐷𝑆

The channel acts like a resistanc
1
o Drain-to-source resistance (for small VDS): 𝑅 𝐷𝑆 ≈
2 𝐾 𝑁 ( 𝑉 𝐺𝑆 − 𝑉 𝑇𝐻 )
D
ID
G
D
ID
+ +
IG = 0 + For small IG = 0 VGS VDS RDS = 1/[2Kn(VGS - VTH)]
G VDS
+ - - -
VGS IS
- IS
S
S
 DC Analysis
Example #1
Find the current ID and the voltage VD. Assume that µnCox = 2.0 ×10-5 A/V2, W/L
= 5, and VTH = 1 V.
10 V
VDD
2.0 × 10
−5
( )
𝐴
×5

( )
2
10 V 𝜇 𝑛 𝑊 𝐶 𝑜𝑥 𝑉 −5 𝐴
𝐾 𝑛= = =5 × 10
2𝐿 2 𝑉
2
RD
R1 5 kW
5 kW ID D
o Since gate current is zero, you can use voltage
IG divider rule to find the gate voltage:
G 5𝑘
𝑉 𝐺𝑆 = ×10 𝑉 =5 𝑉 .
S 5 𝑘+ 5 𝑘
R2
5 kW IS o You can also use Thevenin equivalent of the gate-
biasing circuit to find

Gate-biasing circuit
 DC Analysis
Example #1 (contd…) o Assume saturation mode (need to check later)
10 V o Replace MOSFET with the large-signal model
2
RD 𝐼 𝐷 = 𝐼 𝐷 , 𝑠𝑎𝑡 = 𝐾 𝑛 ( 𝑉 𝐺𝑆 −𝑉 𝑇𝐻 )
5 kW
2.5 kW IG = 0 ID 𝑉 𝐺𝑆 =5 𝑉 ,𝑉 𝑇 =1 𝑉
D
G
+ 𝐴 𝑚𝐴
𝐾 𝑛=5× 10− 5 =0.05
5V
+ VGS 𝑉2 𝑉2
- - Kn(VGS-VTH)2
IS = ID
S

Large Signal Model for

N-MOSFET in Saturation
 DC Analysis
Example #2
A 5 kΩ resistance is connected between the N-MOSFET source and ground. MOSFET is the
same as in the previous example. Determine the values of ID and VD.

VDD = 10 V o Gate voltage VG = 5 V

o We can’t say what VGS is as S is not connected to GND like in
RD
R1 the previous example.
5 kW
5 kW ID
𝑉 𝐺𝑆 =𝑉 𝐺 −𝑉 𝑆=𝑉 𝐺 − 𝐼 𝐷 𝑅 𝑆
D
IG o Assume that the MOSFET is in saturation (need to check
G later) and find the drain current in saturation:
R2 IS = ID S 𝐼 𝐷 = 𝐾 𝑛 (𝑉 𝐺𝑆 −𝑉 𝑇 )2
5 kW
RS 𝐼 𝐷 = 𝐾 𝑛 ( 𝑉 𝐺 − 𝐼 𝐷 𝑅𝑆 −𝑉 𝑇 ) 2
5 kW

𝐼 𝐷 =0.05
𝑚𝐴
𝑉 ( )
2
× ( 5 𝑉 − 𝐼 𝐷 × 5 −1 𝑉 )
2

2
𝐼 𝐷 =0.05 × ( 4 − 5 𝐼 𝐷 )
 DC Analysis
Example 2 (continued) 𝐼 𝐷 =0.05 × ( 4 − 5 𝐼 𝐷 ) 2 in mA
10 V 10 V RS in kΩ
Note that the
voltage at the
RD
o Solving this quadratic equation,
R1 gate VG is 5 V, as
5 kW IG = 0. 5 kW 𝐼 𝐷 =2.09 𝑚𝐴𝑜𝑟 0.31 𝑚𝐴
ID
IG = 0
D o ID = 2.09 mA cannot be a solution because
G
+ that will require VS > 10 V
VGS
R2
5 kW - Kn(VGS-VTH)2 o ID = 0.31 mA is the solution and
IS = ID
S
𝑉 𝐷 =8.45 𝑉 ,𝑉 𝑆 =1.55 𝑉
RS
5 kW 𝑉 𝐷𝑆 = 6.90𝑉 , 𝑉 𝐺𝑆 =3.45 𝑉
 Check that MOSFET is indeed in saturation: & .
Large-Signal Model for
N-MOSFET in Saturation
 Small Signal Model (AC Analysis)
o Small-signal model is needed when we want to analyze MOSFET amplifier
VDD VDD = 10 V VDD = 10 V
RD ID RD RD
5 kW 5 kW id
iD 5 kW
D
RG IG
D

+
D i

=
RG i G RG g
G G
G S vs S
vs
S VGG + IS is
+ =5V -
VGG iS
-

DC Analysis AC Analysis
Find ID and VDS for Find id and vds for given vs at
𝑣 𝐺𝑆 =𝑉 𝐺𝑆 +𝑣 𝑔𝑠
given VDD & VGG the operating point (ID, VDS)
𝑣 𝐷𝑆 =𝑉 𝐷𝑆 + 𝑣 𝑑𝑠
Large-signal model Small-signal model
𝑖 𝐷= 𝐼 𝐷 +𝑖𝑑
 Small Signal Model (ac analysis)
𝑖𝑑 iD
o At the operating point, =𝑠𝑙𝑜𝑝𝑒𝑜𝑓 𝑡h𝑒 𝑔𝑟𝑎𝑝h
𝑣 𝑔𝑠
Gradient at Q
o We need to find the slope of the graph Small change
in drain current. ==
𝑖 𝐷= 𝐾 𝑛 ( 𝑣 𝐺𝑆 − 𝑉 𝑇𝐻 )2 ID + i d

¿¿
id
ID Bias Point Q

Small change
in gate-to
source voltage.
vgs
𝑖𝑑
o Therefore, =2 𝐾 𝑛 ( 𝑉 𝐺𝑆 −𝑉 𝑇𝐻 ) =𝑔𝑚 vGS
𝑣 𝑔𝑠 VT VGS

𝑖𝑑 =𝑔𝑚 𝑣 𝑔𝑠 G
ig = 0 id
D
+ +
o Transconductance of MOSFET: vgs vds gmvgs
- -
𝑔 𝑚=2 𝐾 𝑛 ( 𝑉 𝐺𝑆 − 𝑉 𝑇𝐻 )
is
S
 MOSFET Amplifier VDD

RD
o In the presence of an ac (small signal) source: iD 5 kW

+
𝑣 𝐺𝑆 =𝑉 𝐺𝑆 +𝑣 𝑔𝑠 RG i G
D

vDS
𝑉 𝐷𝐷 −𝑉 𝐷𝑆 𝑉 𝐷𝐷 1
𝑖 𝐷= = − 𝑉 𝐷𝑆
𝑖 𝐷= 𝐼 𝐷 +𝑖𝑑
-
𝑅𝐷 𝑅𝐷 𝑅𝐷
G
vs
S
𝑖𝑑 + iD
=𝑔𝑚 VGG
-
𝑣 𝑔𝑠

ID ID

VTH VGS
𝑣 𝐷𝑆 =𝑉 𝐷𝑆 + 𝑣 𝑑𝑠
 Large Signal Model (p-MOSFET)
o In the saturation region: under dc condition -
S S
+ IS
VSG IS
VTH for P-MOSFET
G - is negative.
+
IG = 0 is equivalent to VSG
ID Kp (|VGS| - |VTH|)2
G
-
D
D IG = 0 ID

o In the non-saturation region: under dc condition -

S S
+ IS IS
VSG
G
- +
is equivalent to RDS =
VSG
IG = 0 1/[2Kp(|VGS| - |VTH|)]
ID
G
-
D
IG = 0 ID
D
Channel Modulation Effect

o Ideal iD-vDS graph

o In saturation mode, iD is not affected by
any change in the vDS
2
𝑖 𝐷=𝑖 𝐷 , 𝑠𝑎𝑡 = 𝐾 𝑛 ( 𝑣 𝐺𝑆 − 𝑣 𝑇𝐻 )

o For a real (non-ideal)

MOSFET
o The drain current iD
is affected by
changes in the vDS
 Channel Modulation Effect

o Graphs in the saturation mode are slightly slanted.

o All characteristic graphs when extrapolated meet at a common point on the negative voltage
axis
o That voltage is called Early voltage
o VA is typically large, e.g., 100 V
o The parameter  = 1/VA is called the channel length modulation factor
o For an N-channel MOSFET,

(
𝑖 𝐷= 𝐾 𝑛 ( 𝑣 𝐺𝑆 −𝑣 𝑇𝐻 )2 1+
𝑣 𝐷𝑆
𝑉𝐴 ) 2
𝑖 𝐷= 𝐾 𝑛 ( 𝑣 𝐺𝑆 − 𝑣 𝑇𝐻 ) ( 1+  𝑣 𝐷𝑆 )
 MOSFET: AC Analysis
o Suppose a MOSFET is biased to operate in the saturation mode. This mode is used for
amplifier application.
o A small ac voltage is superimposed to the gate voltage

o Both DC source VGG and AC signal vS contribute to the drain

current
o We can find the DC drain current using the formula,

2
𝐼 𝐷 = 𝐾 𝑛 ( 𝑉 𝐺𝑆 − 𝑉 𝑇𝐻 ) ( 1+  𝑉 𝐷𝑆 ) N-channel

¿ 𝐼 𝐷 ∨¿ 𝐾 𝑛 ( ¿ 𝑉 𝐺𝑆 ∨−∨ 𝑉 𝑇𝐻 }) ¿ P-channel
2

o Next, we learn how to find the contribution (id) due to the ac

source while the MOSFET operates at the point determined
by the DC analysis. Then,
𝒊 𝑫 = 𝑰 𝑫+ 𝒊 𝒅
 MOSFET: AC Analysis
o Drain current in the saturation mode due to DC bias
only (for n-channel):
Early effect is ignored

o Drain current due to DC+AC:

o Small change in iD due to small change in vGS at the

operating point can be approximated using the slope of
this graph.

𝟐𝑰𝑫
Transconductance: 𝒈 𝒎 =𝟐 𝑲 𝒏 ( 𝑽 𝑮𝑺 −𝑽 𝑻𝑯 )= =𝟐 √ 𝑲 𝒏 𝑰 𝑫
( 𝑽 𝑮𝑺 − 𝑽 𝑻𝑯 )
 MOSFET: Output Resistance
o Output resistance models a small change in drain current (id) due to a small change in drain-
to-source voltage (vds)
𝑣 𝑑𝑠
𝑟𝑜=
𝑖𝑑

For ideal case, output resistance is infinity. For non-ideal case, slope of the graph is
the inverse of the output resistance.
 MOSFET: Output Resistance
o The id in the non-ideal case is related to vds by the equation:

𝑖 𝐷= 𝐾 𝑛 ( 𝑣 𝐺𝑆 −𝑉 𝑇𝐻 ) 1+2
𝑉𝐴 (
𝑣 𝐷𝑆
)
2
𝜕 𝑖𝐷 𝐾 𝑛 ( 𝑣 𝐺𝑆 −𝑉 𝑇𝐻 ) 𝐼𝐷
= ≈
𝜕 𝑣 𝐷𝑆 𝑉𝐴 𝑉𝐴

𝑉𝐴
𝑟𝑜=
𝐼𝐷
For non-ideal case, slope of the graph is
the inverse of the output resistance.

Small-signal (ac) model of MOSFET

 MOSFET: Bulk (or Body) Effect
o It was assumed so far that the source is shorted to the
substrate.
o If that is not the case, then change in the source to
substrate voltage can change the drain current  Bulk or
Body effect.

o If vsb changes momentarily, the threshold voltage is changed

and hence the drain current is changed.
o This can be modeled as a dependent current source
whose magnitude changes due to changes in vsb.