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ORCIDThomas Mikolajick
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- affiliation: TU Dresden, Germany
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2020 – today
- 2024
[c71]Niladri Bhattacharjee, Viktor Havel, Suruchi Kumari, Nima Kavand, Jorge Navarro Quijada, Akash Kumar, Thomas Mikolajick, Jens Trommer:
Dynamic Reconfigurable Security Cells Based on Emerging Devices Integrable in FDSOI Technology. DATE 2024: 1-6- [c70]Nima Kavand, Armin Darjani, Giulio Galderisi, Jens Trommer, Thomas Mikolajick, Akash Kumar:
REDCAP: Reconfigurable RFET-Based Circuits Against Power Side-Channel Attacks. DATE 2024: 1-6 - [c69]Ian O'Connor, Sara Mannaa, Alberto Bosio, Bastien Deveautour, Damien Deleruyelle, Tetiana Obukhova, Cédric Marchand, Jens Trommer, Çigdem Çakirlar, Bruno Neckel Wesling, Thomas Mikolajick, Oskar Baumgartner, Mischa Thesberg, David Pirker, Christoph Lenz, Zlatan Stanojevic, Markus Karner, Guilhem Larrieu, Sylvain Pelloquin, Konstantinous Moustakas, Jonas Müller, Giovanni Ansaloni, Alireza Amirshahi, David Atienza, Jean-Luc Rouas, Leila Ben Letaifa, Georgeta Bordeall, Charles Brazier, Chhandak Mukherjee, Marina Deng, Yifan Wang, Marc François, Houssem Rezgui
, Reveil Lucas, Cristell Maneux:
FVLLMONTI: The 3D Neural Network Compute Cube $(N^{2}C^{2})$ Concept for Efficient Transformer Architectures Towards Speech-to-Speech Translation. DATE 2024: 1-6 - [c68]Sven Beyer, Dominik Kleimaier, Stefan Dünkel, Halid Mulaosmanovic, Steven Soss, Johannes Müller, Zhouhang Jiang, Kai Ni, Thomas Mikolajick, Haidi Zhou:
Charge trapping challenges of CMOS embedded complementary FeFETs. IMW 2024: 1-4 - [c67]Pramoda Vishnumurthy, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Luis Azevedo Antunes, Alfred Kersch:
Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited). IRPS 2024: 1-10 - [c66]Paolo Gibertini, Luca Fehlings, Thomas Mikolajick, Elisabetta Chicca, David Kappel, Erika Covi:
Coincidence Detection with an Analog Spiking Neuron Exploiting Ferroelectric Polarization. ISCAS 2024: 1-5 - [c65]Yusuke Shuto, Jun Okuno, Tsubasa Yonai, Ryo Ono, Peter Reinig, Maximilian Lederer, Konrad Seidel, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Taku Umebayashi, Kentaro Akiyama:
HZO-based Nonvolatile SRAM Array with 100% Bit Recall Yield and Sufficient Retention Time at 85°C. VLSI Technology and Circuits 2024: 1-2 - [i8]Adnan Mehonic, Daniele Ielmini, Kaushik Roy, Onur Mutlu, Shahar Kvatinsky, Teresa Serrano-Gotarredona, Bernabé Linares-Barranco, Sabina Spiga, Sergey Savelev, Alexander G. Balanov, Nitin Chawla, Giuseppe Desoli, Gerardo Malavena, Christian Monzio Compagnoni, Zhongrui Wang, J. Joshua Yang, Syed Ghazi Sarwat, Abu Sebastian, Thomas Mikolajick, Beatriz Noheda, Stefan Slesazeck, Bernard Dieny, Tuo-Hung Hou, Akhil Varri, Frank Brückerhoff-Plückelmann, Wolfram H. P. Pernice, Xixiang Zhang, Sebastian Pazos, Mario Lanza, Stefan Wiefels, Regina Dittmann, Wing H. Ng, Mark Buckwell, Horatio Cox, Daniel J. Mannion, Anthony J. Kenyon, Yingming Lu, Yuchao Yang, Damien Querlioz, Louis Hutin, Elisa Vianello, Sayeed Shafayet Chowdhury, Piergiulio Mannocci, Yimao Cai, Zhong Sun, Giacomo Pedretti, John Paul Strachan, Dmitri B. Strukov, Manuel Le Gallo, Stefano Ambrogio, Ilia Valov, Rainer Waser:
Roadmap to Neuromorphic Computing with Emerging Technologies. CoRR abs/2407.02353 (2024) - 2023
- [j14]Stefan Slesazeck, Thomas Mikolajick:
Focus issue on hafnium oxide based neuromorphic devices. Neuromorph. Comput. Eng. 3(2): 20401 (2023) - [c64]Nima Kavand, Armin Darjani, Jens Trommer, Giulio Galderisi, Thomas Mikolajick, Nicolai Müller, Amir Moradi, Chongzhou Fang, Ning Miao, Han Wang, Sai Manoj P. D., Houman Homayoun, Benjamin Hettwer, Luca Parrini, Akash Kumar:
Special Session: Mitigating Side-Channel Attacks Through Circuit to Application Layer Approaches. CODES+ISSS 2023: 8-17 - [c63]Jens Trommer, Niladri Bhattacharjee, Thomas Mikolajick, Sebastian Huhn, Marcel Merten, Mohammed E. Djeridane, Muhammad Hassan, Rolf Drechsler, Shubham Rai, Nima Kavand, Armin Darjani, Akash Kumar, V. Sessi, M. Drescher, S. Kolodinski, M. Wiatr:
Design Enablement Flow for Circuits with Inherent Obfuscation based on Reconfigurable Transistors. DATE 2023: 1-6 - [c62]Suzanne Lancaster, Mattia Segatto, Cláudia Silva, Benjamin Max, Thomas Mikolajick, David Esseni, Francesco Driussi, Stefan Slesazeck:
Reducing the tunneling barrier thickness of bilayer ferroelectric tunnel junctions with metallic electrodes. DRC 2023: 1-2 - [c61]Soundarya Nagarajan, Daniel Hiller, Ingmar Ratschinski, Joachim Knoch, Thomas Mikolajick, Jens Trommer:
Evaluation of Schottky barrier height at Silicide/Silicon interface of a Silicon Nanowire with Modulation Acceptor Doped Dielectric Shell. DRC 2023: 1-2 - [c60]Richard Schroedter, Ahmet Samil Demirkol, Alon Ascoli, Benjamin Max, Florian Nebe, Thomas Mikolajick, Ronald Tetzlaff:
A pseudo-memcapacitive neurotransistor for spiking neural networks. MOCAST 2023: 1-5 - [c59]Stefan Slesazeck, Suzanne Lancaster, John Reuben, Shima Hosseinzadeh, Dietmar Fey, Thomas Mikolajick:
Hyper Dimensional Computing with Ferroelectric Tunneling Junctions. NANOARCH 2023: 3:1-3:2 - [c58]Niladri Bhattacharjee, Maximilian Reuter, Klaus Hofmann, Thomas Mikolajick, Jens Trommer:
Single Transistor Analog Building Blocks: Exploiting Back-Bias Reconfigurable Devices. NEWCAS 2023: 1-5 - [c57]Steffen Märcker, Michael Raitza, Shubham Rai, Giulio Galderisi, Thomas Mikolajick, Jens Trommer, Akash Kumar:
Formal Analysis of Camouflaged Reconfigurable Circuits. NEWCAS 2023: 1-5 - [e1]Ronald Tetzlaff, Fernando Corinto, Neil Kemp, Alon Ascoli, Andreas Mögel, Meng-Fan Marvin Chang, Joseph S. Friedman, Siting Liu, John Paul Strachan, Stephan Menzel, Mehdi B. Tahoori, Martin Ziegler, Jason Eshraghian, Ioannis Messaris, Christian Koitzsch, Thomas Mikolajick, Vasileios G. Ntinas:
Proceedings of the 18th ACM International Symposium on Nanoscale Architectures, NANOARCH 2023, Dresden, Germany, December 18-20, 2023. ACM 2023 [contents] - 2022
- [j13]Giulio Galderisi, Thomas Mikolajick, Jens Trommer:
Reconfigurable Field Effect Transistors Design Solutions for Delay-Invariant Logic Gates. IEEE Embed. Syst. Lett. 14(2): 107-110 (2022) - [j12]Erika Covi, Halid Mulaosmanovic, Benjamin Max, Stefan Slesazeck, Thomas Mikolajick:
Ferroelectric-based synapses and neurons for neuromorphic computing. Neuromorph. Comput. Eng. 2(1): 12002 (2022) - [j11]Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Steve B. Furber, Emre Neftci, Franz Scherr, Wolfgang Maass, Srikanth Ramaswamy, Jonathan Tapson, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Gabriella Panuccio, Mufti Mahmud, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds:
2022 roadmap on neuromorphic computing and engineering. Neuromorph. Comput. Eng. 2(2): 22501 (2022) - [j10]Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky:
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory. IEEE Trans. Circuits Syst. I Regul. Pap. 69(4): 1595-1605 (2022) - [c56]Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Manfred Helm, Artur Erbe:
Tunneling transport in WSe2-MoS2 heterojunction transistor enabled by a two-dimensional device architecture. DRC 2022: 1-2 - [c55]Giulio Galderisi, Thomas Mikolajick, Jens Trommer:
Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VT Devices Fabrication for Hardware Security Applications. DRC 2022: 1-2 - [c54]Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck:
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide. DRC 2022: 1-2 - [c53]Suzanne Lancaster, Quang T. Duong, Erika Covi, Thomas Mikolajick, Stefan Slesazeck:
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing. ESSCIRC 2022: 137-140 - [c52]Mattia Segatto, Marco Massarotto, Suzanne Lancaster, Quang T. Duong, Antonio Affanni, Riccardo Fontanini, Francesco Driussi, Daniel Lizzit, Thomas Mikolajick, Stefan Slesazeck, David Esseni:
Polarization switching and AC small-signal capacitance in Ferroelectric Tunnel Junctions. ESSDERC 2022: 340-343 - [c51]Nicki Mika, Thomas Melde, Stefan Dünkel, Michael Otto, Francois Weisbuch, Peter Krottenthaler, Thomas Mikolajick:
Experimental fabrication of an ESF3 floating gate flash cell in an FD-SOI process. ESSDERC 2022: 356-359 - [c50]Paolo Gibertini, Luca Fehlings, Suzanne Lancaster, Quang T. Duong, Thomas Mikolajick, Catherine Dubourdieu, Stefan Slesazeck, Erika Covi, Veeresh Deshpande:
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron. ICECS 2022 2022: 1-4 - [c49]Eter Mgeladze, Melanie Herzig, Richard Schroedter, Ronald Tetzlaff, Thomas Mikolajick, Stefan Slesazeck:
An Analog Memristive and Memcapacitive Device for Neuromorphic Computing. ICECS 2022 2022: 1-4 - [c48]Ruben Alcala, Furqan Mehmood, Pramoda Vishnumurthy, Terence Mittmann, Thomas Mikolajick, Uwe Schroeder:
Influence of Interfacial Oxide Layers in Hf0.5Zr0.5O2 based ferroelectric capacitors on reliability performance. IMW 2022: 1-4 - [c47]Shyam Narayanan, Erika Covi, Viktor Havel, Charlotte Frenkel, Suzanne Lancaster, Quang T. Duong, Stefan Slesazeck, Thomas Mikolajick, Melika Payvand, Giacomo Indiveri:
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices. ISCAS 2022: 717-721 - [c46]Richard Schroedter, Eter Mgeladze, Melanie Herzig, Alon Ascoli, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff:
Physics-based modeling of a bi-layer Al₂O₃/Nb₂O₅ analog memristive device. ISCAS 2022: 1097-1101 - [c45]Christian Römer, Ghader Darbandy, Mike Schwarz, Jens Trommer, Maik Simon, Andre Heinzig, Thomas Mikolajick, Walter M. Weber, Benjamín Iñíguez, Alexander Kloes:
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors. MIXDES 2022: 33-39 - [c44]Richard Schroedter, Ahmet Samil Demirkol, Alon Ascoli, Ronald Tetzlaff, Eter Mgeladze, Melanie Herzig, Stefan Slesazeck, Thomas Mikolajick:
SPICE Compact Model for an Analog Switching Niobium Oxide Memristor. MOCAST 2022: 1-4 - [i7]Shyam Narayanan, Erika Covi, Viktor Havel, Charlotte Frenkel, Suzanne Lancaster, Quang T. Duong, Stefan Slesazeck, Thomas Mikolajick, Melika Payvand, Giacomo Indiveri:
A 120dB Programmable-Range On-Chip Pulse Generator for Characterizing Ferroelectric Devices. CoRR abs/2202.04049 (2022) - [i6]Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky:
C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory. CoRR abs/2205.12061 (2022) - [i5]Suzanne Lancaster, Quang T. Duong, Erika Covi, Thomas Mikolajick, Stefan Slesazeck:
Improvement of FTJ on-current by work function engineering for massive parallel neuromorphic computing. CoRR abs/2209.10437 (2022) - [i4]Paolo Gibertini, Luca Fehlings, Suzanne Lancaster, Quang T. Duong, Thomas Mikolajick, Catherine Dubourdieu, Stefan Slesazeck, Erika Covi, Veeresh Deshpande:
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron. CoRR abs/2211.02598 (2022) - 2021
- [j9]Martin Weiher, Melanie Herzig, Ronald Tetzlaff, Alon Ascoli, Thomas Mikolajick, Stefan Slesazeck:
Improved Vertex Coloring With NbOₓ Memristor-Based Oscillatory Networks. IEEE Trans. Circuits Syst. I Regul. Pap. 68(5): 2082-2095 (2021) - [c43]Ilia Polian, Frank Altmann, Tolga Arul, Christian Boit, Ralf Brederlow, Lucas Davi, Rolf Drechsler, Nan Du, Thomas Eisenbarth, Tim Güneysu, Sascha Hermann, Matthias Hiller, Rainer Leupers, Farhad Merchant, Thomas Mussenbrock, Stefan Katzenbeisser, Akash Kumar, Wolfgang Kunz, Thomas Mikolajick, Vivek Pachauri, Jean-Pierre Seifert, Frank Sill Torres, Jens Trommer:
Nano Security: From Nano-Electronics to Secure Systems. DATE 2021: 1334-1339 - [c42]Cédric Marchand, Ian O'Connor, Mayeul Cantan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick:
FeFET based Logic-in-Memory: an overview. DTIS 2021: 1-6 - [c41]Riccardo Fontanini, Justine Barbot, Mattia Segatto, Suzanne Lancaster, Quang T. Duong, Francesco Driussi, Laurent Grenouillet, François Triozon, Jean Coignus, Thomas Mikolajick, Stefan Slesazeck, David Esseni:
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. ESSDERC 2021: 255-258 - [c40]Anthony Calzolaro, Thomas Mikolajick, Andre Wachowiak:
Integration and Reliability Aspects of Low-Temperature and Au-free Ta/Al-based Ohmic Contacts for AlGaN/GaN MIS-HEMTs. ESSDERC 2021: 307-310 - [c39]Jun Okuno, Takafumi Kunihiro, Kenta Konishi, Hideki Maemura, Yusuke Shuto, Fumitaka Sugaya, Monica Materano, Tarek Ali, Maximilian Lederer, Kati Kühnel, Konrad Seidel, Uwe Schroeder, Thomas Mikolajick, Masanori Tsukamoto, Taku Umebayashi:
High-Endurance and Low-Voltage operation of 1T1C FeRAM Arrays for Nonvolatile Memory Application. IMW 2021: 1-3 - [c38]Halid Mulaosmanovic, Patrick D. Lomenzo, Uwe Schroeder, Stefan Slesazeck, Thomas Mikolajick, Benjamin Max:
Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories. IRPS 2021: 1-6 - [c37]Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck:
Ferroelectric Tunneling Junctions for Edge Computing. ISCAS 2021: 1-5 - [c36]Alon Ascoli, Martin Weiher, Ronald Tetzlaff, Melanie Herzig, Stefan Slesazeck, Thomas Mikolajick:
Control Strategies to Optimize Graph Coloring via M-CNNs with Locally-Active NbOx Memristors. MOCAST 2021: 1-8 - [c35]Shubham Rai, Nishant Gupta, Abhiroop Bhattacharjee, Ansh Rupani, Michael Raitza, Jens Trommer, Thomas Mikolajick, Akash Kumar:
END-TRUE: Emerging Nanotechnology-Based Double-Throughput True Random Number Generator. VLSI-SoC (Selected Papers) 2021: 175-203 - [i3]Dennis V. Christensen, Regina Dittmann, Bernabé Linares-Barranco, Abu Sebastian, Manuel Le Gallo, Andrea Redaelli, Stefan Slesazeck, Thomas Mikolajick, Sabina Spiga, Stephan Menzel, Ilia Valov, Gianluca Milano, Carlo Ricciardi, Shi-Jun Liang, Feng Miao, Mario Lanza, Tyler J. Quill, Scott T. Keene, Alberto Salleo, Julie Grollier, Danijela Markovic, Alice Mizrahi, Peng Yao, J. Joshua Yang, Giacomo Indiveri, John Paul Strachan, Suman Datta, Elisa Vianello, Alexandre Valentian, Johannes Feldmann, Xuan Li, Wolfram H. P. Pernice, Harish Bhaskaran, Emre Neftci, Srikanth Ramaswamy, Jonathan Tapson, Franz Scherr, Wolfgang Maass, Priyadarshini Panda, Youngeun Kim, Gouhei Tanaka, Simon Thorpe, Chiara Bartolozzi, Thomas A. Cleland, Christoph Posch, Shih-Chii Liu, Arnab Neelim Mazumder, Morteza Hosseini, Tinoosh Mohsenin, Elisa Donati, Silvia Tolu, Roberto Galeazzi, Martin Ejsing Christensen, Sune Holm, Daniele Ielmini, N. Pryds:
2021 Roadmap on Neuromorphic Computing and Engineering. CoRR abs/2105.05956 (2021) - [i2]Benjamin Max, Michael Hoffmann, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Hafnia-based Double Layer Ferroelectric Tunnel Junctions as Artificial Synapses for Neuromorphic Computing. CoRR abs/2107.00945 (2021) - [i1]Erika Covi, Quang T. Duong, Suzanne Lancaster, Viktor Havel, Jean Coignus, Justine Barbot, Ole Richter, Philipp Klein, Elisabetta Chicca, Laurent Grenouillet, Athanasios Dimoulas, Thomas Mikolajick, Stefan Slesazeck:
Ferroelectric Tunneling Junctions for Edge Computing. CoRR abs/2107.01853 (2021) - 2020
- [c34]Muhammad Bilal Khan, Sayantan Ghosh, Slawomir Prucnal, Tom Mauersberger, René Hübner, Maik Simon, Thomas Mikolajick, Artur Erbe, Yordan M. Georgiev:
Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing. DRC 2020: 1-2 - [c33]Evelyn T. Breyer, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Flexible Memory, Bit-Passing and Mixed Logic/Memory Operation of two Intercoupled FeFET Arrays. ISCAS 2020: 1-5
2010 – 2019
- 2019
- [j8]Raoul Hentschel, Andre Wachowiak, A. Großer, Simon Kotzea, A. Debald, Holger Kalisch, Andrei Vescan, A. Jahn, Stefan Schmult, Thomas Mikolajick:
Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect. Microelectron. J. 91: 42-45 (2019) - [j7]Martin Weiher, Melanie Herzig, Ronald Tetzlaff, Alon Ascoli, Thomas Mikolajick, Stefan Slesazeck:
Pattern Formation With Locally Active S-Type NbOx Memristors. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(7): 2627-2638 (2019) - [j6]Shubham Rai, Jens Trommer, Michael Raitza, Thomas Mikolajick, Walter M. Weber, Akash Kumar:
Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors. IEEE Trans. Very Large Scale Integr. Syst. 27(3): 560-572 (2019) - [c32]Felix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann, Thomas Mikolajick, Johann W. Bartha:
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors. DRC 2019: 51-52 - [c31]Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operation. DRC 2019: 97-98 - [c30]Thomas Mikolajick, Halid Mulaosmanovic, Michael Hoffmann, Benjamin Max, Terence Mittmann, Uwe Schroeder, Stefan Slesazeck:
Variants of Ferroelectric Hafnium Oxide based Nonvolatile Memories. DRC 2019: 207-208 - [c29]Evelyn T. Breyer, Halid Mulaosmanovic, Jens Trommer, Thomas Melde, Stefan Dünkel, Martin Trentzsch, Sven Beyer, Thomas Mikolajick, Stefan Slesazeck:
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. ESSDERC 2019: 118-121 - [c28]Jens Trommer, Maik Simon, Stefan Slesazeck, Walter M. Weber, Thomas Mikolajick:
Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent Inputs. ESSDERC 2019: 134-137 - [c27]Bharathwaj Suresh, Martin Bertele, Evelyn T. Breyer, Philipp Klein, Halid Mulaosmanovic, Thomas Mikolajick, Stefan Slesazeck, Elisabetta Chicca:
Simulation of integrate-and-fire neuron circuits using HfO2-based ferroelectric field effect transistors. ICECS 2019: 229-232 - [c26]Taras Ravsher, Halid Mulaosmanovic, Evelyn T. Breyer, Viktor Havel, Thomas Mikolajick, Stefan Slesazeck:
Adoption of 2T2C ferroelectric memory cells for logic operation. ICECS 2019: 791-794 - [c25]Dieter Bimberg, Thomas Mikolajick, Xavier Wallart:
Novel Quantum Dot Based Memories with Many Days of Storage Time : Last Steps towards the Holy Grail? NVMTS 2019: 1-4 - [c24]Patrick D. Lomenzo, Stefan Slesazeck, Michael Hoffmann, Thomas Mikolajick, Uwe Schroeder, Benjamin Max:
Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields. NVMTS 2019: 1-8 - 2018
- [c23]Ahmedullah Aziz, Evelyn T. Breyer, An Chen, Xiaoming Chen, Suman Datta, Sumeet Kumar Gupta, Michael Hoffmann, Xiaobo Sharon Hu, Adrian M. Ionescu, Matthew Jerry, Thomas Mikolajick, Halid Mulaosmanovic, Kai Ni, Michael T. Niemier, Ian O'Connor, Atanu Saha, Stefan Slesazeck, Sandeep Krishna Thirumala, Xunzhao Yin:
Computing with ferroelectric FETs: Devices, models, systems, and applications. DATE 2018: 1289-1298 - [c22]Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Domain Formation in Ferroelectric Negative Capacitance Devices. DRC 2018: 1-2 - [c21]Maik Simon, Jens Trommer, Boshen Liang, D. Fischer, Tim Baldauf, Muhammad Bilal Khan, Andre Heinzig, M. Knaut, Yordan M. Georgiev, Artur Erbe, J. W. Bartha, Thomas Mikolajick, Walter M. Weber:
A wired-AND transistor: Polarity controllable FET with multiple inputs. DRC 2018: 1-2 - [c20]Benjamin Max, Michael Hoffmann, Stefan Slesazeck, Thomas Mikolajick:
Ferroelectric Tunnel Junctions based on Ferroelectric-Dielectric Hf0.5Zr0.5.O2/ A12O3Capacitor Stacks. ESSDERC 2018: 142-145 - [c19]Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Embedding hafnium oxide based FeFETs in the memory landscape. ICICDT 2018: 121-124 - [c18]Evelyn T. Breyer, Halid Mulaosmanovic, Stefan Slesazeck, Thomas Mikolajick:
Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology. ISCAS 2018: 1-5 - [c17]Ian O'Connor, Mayeul Cantan, Cédric Marchand, Bertrand Vilquin, Stefan Slesazeck, Evelyn T. Breyer, Halid Mulaosmanovic, Thomas Mikolajick, Bastien Giraud, Jean-Philippe Noel, Adrian M. Ionescu, Igor Stolichnov:
Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices. VLSI-SoC 2018: 180-183 - 2017
- [c16]Michael Raitza, Akash Kumar, Marcus Völp, Dennis Walter, Jens Trommer, Thomas Mikolajick, Walter M. Weber:
Exploiting transistor-level reconfiguration to optimize combinational circuits. DATE 2017: 338-343 - [c15]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe, Lukas M. Eng, Thomas Mikolajick, Uwe Schroeder:
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. ESSDERC 2017: 160-163 - [c14]Dae-Young Jeon, Tim Baldauf, So Jeong Park, Sebastian Pregl, Larysa Baraban, Gianaurelio Cuniberti, Thomas Mikolajick, Walter M. Weber:
In-depth electrical characterization of carrier transport in ambipolar Si-NW Schottky-barrier FETs. ESSDERC 2017: 304-307 - [c13]Stefan Slesazeck, H. Wylezich, Thomas Mikolajick:
Analog memristive and memcapacitive properties of Ti / AI2O3 / Nb2O5 / Ti resistive switches. LASCAS 2017: 1-4 - [c12]Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick:
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. NVMTS 2017: 1-4 - [c11]Lotta Romhildt, Felix Zorgiebel, Bergoi Ibarlucea, Maryam Vahdatzadeh, Larysa Baraban, Gianaurelio Cuniberti, Sebastian Pregl, Walter M. Weber, Thomas Mikolajick, Jörg Opitz:
Human α-thrombin detection platform using aptamers on a silicon nanowire field-effect transistor. PATMOS 2017: 1-4 - 2016
- [c10]Jens Trommer, Andre Heinzig, Tim Baldauf, Thomas Mikolajick, Walter M. Weber, Michael Raitza, Marcus Völp:
Reconfigurable nanowire transistors with multiple independent gates for efficient and programmable combinational circuits. DATE 2016: 169-174 - [c9]Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick:
Impact of field cycling on HfO2 based non-volatile memory devices. ESSDERC 2016: 364-368 - [c8]Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Böttger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder:
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. ESSDERC 2016: 369-372 - [c7]Thomas Mikolajick, H. Wylezich, Hannes Maehne, Stefan Slesazeck:
Versatile resistive switching in niobium oxide. ISCAS 2016: 381-384 - 2015
- [j5]Christoph Eichenseer, Gerhard Pöppel, Thomas Mikolajick:
Energy monitoring of high dose ion implantation in semiconductors via photocurrent measurement. Microelectron. Reliab. 55(9-10): 1369-1372 (2015) - [j4]Alon Ascoli, Stefan Slesazeck, Hannes Mähne, Ronald Tetzlaff, Thomas Mikolajick:
Nonlinear Dynamics of a Locally-Active Memristor. IEEE Trans. Circuits Syst. I Regul. Pap. 62-I(4): 1165-1174 (2015) - [c6]Johannes Ocker, Stefan Slesazeck, Thomas Mikolajick, S. Buschbeck, S. Günther, E. Yurchuk, R. Hoffmann, V. Beyer:
On the voltage scaling potential of SONOS non-volatile memory transistors. ESSDERC 2015: 118-121 - [c5]Alon Ascoli, Ronald Tetzlaff, Stefan Slesazeck, Hannes Mähne, Thomas Mikolajick:
Stability analysis supports memristor circuit design. ISCAS 2015: 1138-1141 - 2014
- [j3]Christoph Eichenseer, Gerhard Pöppel, Thomas Mikolajick:
Localization of temperature sensitive areas on analog circuits. Microelectron. J. 45(6): 734-739 (2014) - [j2]Stefan Doering, Ralf Rudolf, Martin Pinkert, Hagen Roetz, Catejan Wagner, Stefan Eckl, Marc Strasser, Andre Wachowiak, Thomas Mikolajick:
Scanning spreading resistance microscopy for failure analysis of nLDMOS devices with decreased breakdown voltage. Microelectron. Reliab. 54(9-10): 2128-2132 (2014) - [c4]Walter M. Weber, Jens Trommer, Matthias Grube, Andre Heinzig, Markus König, Thomas Mikolajick:
Reconfigurable silicon nanowire devices and circuits: Opportunities and challenges. DATE 2014: 1-6 - 2013
- [c3]Andre Wachowiak, Stefan Slesazeck, Paul Jordan, Jürgen Holz, Thomas Mikolajick:
New color sensor concept based on single spectral tunable photodiode. ESSDERC 2013: 127-130 - [c2]Walter M. Weber, Jens Trommer, Dominik Martin, Matthias Grube, Andre Heinzig, Thomas Mikolajick:
Reconfigurable nanowire electronics - Device principles and circuit prospects. ESSDERC 2013: 246-251 - [c1]Tony Schenk, Stefan Mueller, Uwe Schroeder, Robin Materlik, Alfred Kersch, Mihaela Popovici, Christoph Adelmann, Sven Van Elshocht, Thomas Mikolajick:
Strontium doped hafnium oxide thin films: Wide process window for ferroelectric memories. ESSDERC 2013: 260-263
2000 – 2009
- 2001
- [j1]Thomas Mikolajick, Christine Dehm, Walter Hartner, Ivan Kasko, Marcus J. Kastner, Nicolas Nagel, Manfred Moert, Carlos Mazure:
FeRAM technology for high density applications. Microelectron. Reliab. 41(7): 947-950 (2001)
Coauthor Index
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