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General Description Case Outline 55aw, Style 1: 30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHZ

This document summarizes the specifications and characteristics of the 1214-30, a 30 watt pulsed radar transistor operating between 1200-1400 MHz. The transistor is internally matched and hermetically sealed to provide high reliability for long pulse radar applications. Key specifications include 30 watts maximum power output, 28 volts operation, and a 2 millisecond pulse width at 20% duty cycle. Electrical characteristics include a minimum power output of 30 watts, collector efficiency of 48%, and breakdown voltages of 50 volts collector-emitter and 3.5 volts emitter-base.

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Muhammad Ayaz Zakir
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40 views3 pages

General Description Case Outline 55aw, Style 1: 30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHZ

This document summarizes the specifications and characteristics of the 1214-30, a 30 watt pulsed radar transistor operating between 1200-1400 MHz. The transistor is internally matched and hermetically sealed to provide high reliability for long pulse radar applications. Key specifications include 30 watts maximum power output, 28 volts operation, and a 2 millisecond pulse width at 20% duty cycle. Electrical characteristics include a minimum power output of 30 watts, collector efficiency of 48%, and breakdown voltages of 50 volts collector-emitter and 3.5 volts emitter-base.

Uploaded by

Muhammad Ayaz Zakir
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
Download as pdf or txt
Download as pdf or txt
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1214-30

30 Watts, 28 Volts, Pulsed Radar 1200 - 1400 MHz

GENERAL DESCRIPTION
The 1214-30 is an internally matched, COMMON BASE transistor capable of providing 30 Watts of pulsed RF output power at two milliseconds pulse width, twenty percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for long pulse radar applications. It utilizes gold metalization and diffused emitter ballasting to provide high reliability and supreme ruggedness.

CASE OUTLINE 55AW, STYLE 1

ABSOLUTE MAXIMUM RATINGS


Maximum Power Dissipation @ 25oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 88 Watts 50 Volts 3.5 Volts 4.0 Amps

- 65 to + 200oC + 200oC

ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL Pout Pin Pg CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance TEST CONDITIONS F = 1200-1400 MHz Vcc = 28 Volts Pulse Width = 2 ms Duty = 20% Rated Conditions MIN 30 6.0 7.0 48 3:1 TYP MAX UNITS Watts Watts dB %

c
VSWR

BVces BVebo Hfe Cob

jc

Collector to Emitter Breakdown Emitter to Base Breakdown DC Current Gain Output Capacitance* Thermal Resistance

Ic = 50 mA Ie = 5 mA Vce=5 V, Ic =500mA F=1 MHz, Vcb=28V Rated Pulse Condition

50 3.5 20 2.0

Volts Volts pF C/W

* Not measureable due to internal prematch network IssueA July 1997

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

1214-30

Typical Impedances

August 1996

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