Module 8: Solved Problems
Module 8: Solved Problems
Schematic:
Analysis: (a) For the boiling process, the rate equation can be rewritten
as
_ q s" q'
h= = s /(Ts − Tsat )
(Ts − Tsat ) πD
_
3150W / m W
h= /(126 − 100)°C = 1.00 × 10 6 2 / 26 ° C = 38,600W / m 2 .K
π × 0.001m m
Note that heat flux is very close to q”max, and nucleate boiling exists.
(b) For nucleate boiling, the Rohsenow correlation may be solved for
Cs,f, to give
1
⎧ μ h ⎫ ⎡ g ( ρ l − ρν ) ⎤
3
1/ 6
⎡ c p ,l Δ Te ⎤
C s,f = ⎨ l 'f ,g ⎬ ⎢ ⎥⎦ ⎢ n ⎥
⎩ qs ⎭ ⎣ σ ⎢⎣ h f , g Prl ⎥⎦
1/ 3 1/ 6
⎧ 279 × 10 −6 N .s / m × 22257 × 10 3 J / kg ⎫ ⎡ 9.8m / s 2 (957.9 − 0.5955kg / m 3 ⎤
C s, f = ⎨ ⎬ ⎢ ⎥
⎩ 1.00 × 10 6 W / m 2 ⎭ ⎣ 58.9 × 10 −3 N / m ⎦
⎛ 4217 J / kg.K × 26 K ⎞
× ⎜⎜ ⎟⎟
⎝ 2257 × 10 3
J / kg × 1. 76 ⎠
C s , f = 0.017
Known: copper pan 150 mm in diameter and filled with water at 1atm,
maintained at 115°C.
Find: the power required to boil the water and the evaporation rate;
ratio of the heat flux to the critical heat flux; pan temperature is
required to achieve the critical heat flux.
Schematic:
.
m
Analysis: the power requirement for boiling and the evaporation rate
can be expressed as follows,
.
q boil = q s" . As m = q boil / h f , g
The heat flux for nucleate pool boiling can be estimated using the
Ronsenow Correlation.
3
⎡ g ( ρ l − ρν ) ⎤
1/ 2
⎡ c p ,l ΔTe ⎤
q s = μl h f ,g ⎢
"
⎥ ⎢ n ⎥
⎣ σ ⎦ ⎢⎣ C s , f h f , g Prl ⎥⎦
Selecting Cs , f =0.013 and n=1 from standard table for the polished
copper finish, find
1/ 6
⎧ 279 × 10 −6 N .s / m × 2257 × 10 3 J / kg ⎫⎡ 9.8m / s 2 (957.9 − 0.5955kg / m 3 ⎤
C s, f = ⎨ ⎬⎢ ⎥
⎩ ⎭⎣ 58.9 × 10 −3 N / m ⎦
⎛ 4217 J / kg.K × 26 K ⎞
× ⎜⎜ ⎟⎟
⎝ 2257 × 10 J / kg × 1.76 ⎠
3
C s , f = 4.619 × 10 5 W / m 2
π
q boil = 4.619 × 10 5 W / m 2 × (0.150m) 2 = 8.16kW
4
.
m boil = 8.16kW / 2257 × 10 3 J / kg = 3.62 × 10 −3 kg / s = 13kg / h
Q”max=1.26MW/m2.
From the boiling curve, ΔTe ≈30°C will provide the maximum heat
flux
3. A silicon chip of thickness L=25 mm and thermal conductivity
ks=135W/m.K is cooled by boiling a saturated fluorocarbon liquid
(Tsat=57°C) on its surface. The electronic circuits on the bottom of the
chip are perfectly insulated.
Schematic:
1/ 3
0.005(84,400 J / kg )9.011.7 ⎛ 5 × 10 4 W / m 2 ⎞
Ts − Tsat = ⎜⎜ −6
⎟⎟ ×
1100 J / kg.K ⎝ 440 × 10 kg / m.s × 84,400 J / kg ⎠
1/ 6
⎡ 8.1 × 10 −3 kg / s 2 ⎤
⎢ 3⎥
= 15.9°C
⎣ 9.807 m / s (1619.2 − 13.4)kg / m ⎦
2
(b) With the heat rate 90% of the critical heat flux (CHF)
1/ 4
⎡σg ( ρ l − ρ v ) ⎤
q "
max = 0.149hfgρv ⎢ ⎥ = 0.149 × 84,400 J / kg × 13.4kg / m 3
⎣ ρv 2 ⎦
1/ 4
⎡ 8.1 × 10 −3 × 9.807m / s 2 (1619.2 − 13.4)kg / m 3 ⎤
×⎢ ⎥
⎣ 13.4kg / m 3 ⎦
"
q max = 15.5 × 10 4 W / m 2 q "o = 0.9q max
"
= 13.9 × 10 4 W/m 2
ΔTe = ΔTe ) a (q "o /q "o,a )1/3 = 15.9°C × 1.41 = 22.4 ° C Ts = 22.4°C + 57°C = 79.4 ° C
Comments: Pool boiling is not adequate for many VLSI chip design
4. As strip steel leaves the last set of rollers in a hot rolling mill, it is
quenched by planar water jets before being coiled. Due to the large
plate temperatures, film boiling is achieved shortly downstream of the
jet impingement region.
Consider conditions for which the strip steel beneath the vapor blanket
is at a temperature of 907K and has an emissivity of 0.35. Neglecting
the effects of the strip and jet motions and assuming convection
within the film to be approximated by that associated with a large
horizontal cylinder of 1-m-diameter, estimate the rate of heat transfer
per unit surface area from the strip to the wall.
Schematic:
1/ 4
_ ⎡ 9.8m / s 2 (957.9 − 175.4)kg / m 3 (2.02 × 10 −7 J / kg )(1m) 3 ⎤
N u D = 0.62⎢ ⎥ = 6243
⎣ 0.182 × 10 −6 m 2 / s (0.155W / m.K )(907 − 373) K ⎦
hence,
_ _
h conv = N u D k v / D = 6243W / m 2 .K (0.155W / m.K / 1m) = 968W / m 2 .K
_
h rad = 24W / m2.K
_
hence, h = 968W / m2.K + (3 / 4)(24W / m2.K ) = 986W / m2.K
Schematic:
. '
'
m = q ' / h fg (1)
Where the heat rate follows from equation using overall heat transfer
coefficient
−1
⎡ 1 D /2 D D 1⎤
U o = ⎢ + o ln o + o ⎥ (3)
⎣ ho k Di Di hi ⎦
−1
⎡ 1 0.0095m 19 19 1 ⎤
Uo = ⎢ + ln +
⎣ 6800W / m .K 110W / m.K 16.5 16.5 5200W / m .K ⎥⎦
2 2
. '
m = U oπDo (Tsat − Tm ) / h ' fg
. '
m = 2627W / m 2 .Kπ (0.019m)(320 − 303) K / 2410 × 10 3 J / kg = 1.11 × 10 3 kg / s
Comments: (1) Note from evaluation of equation. (3) That the thermal
resistance of the brass tube is not negligible.
h 'fg = 2410kJ / kg