BJT Common Emitter Characteristics: Experiment 6

Experiment 6: BJT Common Emitter Characteristics
6.1 Objectives
To plot the characteristics curves of a BJT transistor in Common Emitter (CE) configuration.
6.2 Background
At the completion of this experiment, you will be able to test transistors and demonstrate a
transistor switch by using PNP and NPN transistor circuits. When you have completed this
exercise, you will be able to test a transistor by forward biasing and reverse biasing the junctions.
When another section of P or N type material is added to a PN diode junction, a three-section

device containing two junctions is formed. This three-section semiconductor device is a bipolar
transistor. The three sections are the emitter (E) and collector (C) on the ends and the base (B) in
the middle.
Transistors are classified by the arrangement of the P (positive) and N (negative) type materials.
Transistors are either PNP or NPN types, as shown. Each of the two PN junctions of a transistor
has forward and reverse voltage/current characteristics similar to a diode PN junction.
Q is the letter used to identify a transistor. The emitter arrows in the NPN and PNP transistor
symbols show the direction of conventional current flow. Electron current flow, which is in the
opposite direction of conventional current flow, is used in this course.
The PNP transistor shown has the base and collector terminals negative with respect to the emitter
terminal. Because the negative (N) base material has a more negative voltage than the emitter, the
PN junction is forward biased and permits current to flow from the base to the emitter. The current
arrows indicate electron current flow. The base current permits collector current to flow to the
emitter because the collector is more negative than the emitter.
The NPN transistor shown has the base and collector terminals positive with respect to the emitter
terminal. Because the positive (P) base material has a more positive voltage than the emitter, the
PN junction is forward biased and permits current to flow from the emitter to the base. The base
current permits collector current from the emitter because the collector is more positive than the
emitter.
A transistor is a current-controlling device; the base-emitter junction has to be forward biased for
transistor current to flow. A small change in base current causes a large change in collector
current; this transistor property is current gain. The emitter current is the sum of the base and
collector currents: IE = IB + IC
BJTs are used to amplify current, using a small base current to control a large current between the
collector and the emitter. This amplification is so important that one of the most noted parameters
of transistors is the dc current gain, β, which is the ratio of collector current to base current: IC =
β∙IB. In this lab you will measure several such parameters, discussed in paragraphs below.
The terminology for transistors includes a lot of subscripts. Generally, the subscripts mean:
C → Collector
E → Emitter
B → Base
So, VCE is the collector-emitter voltage; VBE is the base-emitter voltage; and IB is the base current.
One relationship to keep in mind is that IC is always less than IE. In fact, IE = IC + IB.
Three configurations for connecting bipolar junction transistors are common-base, common-
emitter, and common-collector. A large number of transistor circuits use the BJT connected in the
common-emitter (CE) or grounded-emitter configuration. In the CE configuration, the input
current and output voltage are the independent variables, while the input voltage and output current
are the dependent variables.
In this experiment, the input and output characteristics of a transistor will be measured. The
output characteristics, often called the collector characteristics, are plots of IC versus VCE at
constant values of IB and have 3 basic regions of transistor operation. These regions are the
cutoff, the active, and the saturated regions. If a BJT transistor is to be used as an amplifier, it
will usually be operated in the active region, where the relationship between the input current, IB,
and the output current, IC, is nearly linear; that is, IC = β∙IB, where β is the gain. If the transistor is
to be used in digital circuitry, it will be operated in the saturated or cutoff conditions and will
only be in the active region when switching from one condition to the other.
6.3 Pre-Lab
A hand-written, group lab report is required with simulation results at the time of lab. The
completed lab report is due at the time of next lab.
6.4 Equipment
• Dual DC supply
• 1 NPN BJT: 2N3904
• 2 Resistors: 1K and 15K each
• Multimeter
6.5 Procedure
1. Connect the circuit as shown in figure below.
2. User 1k Ohm resistance at the collector and 15K Ohm resistance at the base.
3. Set VBE to 0.5V and measure IB.
4. Change the values of VCE as per the table below and measure the corresponding values of
I C.
5. Repeat the last two steps for VBE = 0.6V, 0.7V, 0.75V and complete the table.
6. Plot the Input Characteristic curves (IB Vs VBE for each VCE = 2.5, 5, 8, 12).
7. Plot the Output Characteristic curves (IC Vs VCE for each VBE).
8. Conclude the results in your own words.
6.6 Lab Report

A typeset (not hand-written), group lab report (not exceeding 5 pages including title page) is
required and is due before 4pm one week after the lab. Submit report in the DEE office.
6.7 Results
S.no. VCE VBE = 0.5V . VBE = 0.6V . VBE = 0.7V . VBE = 0.75V .
IB = ______ IB = ______ IB = ______ IB = ______
IC IC IC IC
1 0.0
2 0.25
3 0.5
4 1.5
5 2.0
6 2.5
7 3.0
8 3.5
9 4.0
10 4.5
11 5.0
12 5.5
13 6.0
14 8.0
15 10.0
16 12.0
6.8 Assessment
CLO CLO Attributes Bloom Performance Indicators
 Does his/her part
Teamwork: Work effectively with
CLO1 A1, A2  Listens to other’s ideas
team members  Does not argue
 Proper wiring of the circuit
 Correct use of instruments (signal generator,
GRS Skills: Utilize techniques and skills in
CLO2 C3, P3 oscilloscope)
the laboratory experiments  Data recorded in table
 Necessary calculation in table performed
Ethics and Safety: Adhere to the
CLO3 P2 As per rubric
instructions of laboratory safety
Written: express points clearly and  Report is structured properly
CLO4 effectively through presentation C1  Figures and Graphs annotated
and/or Report.  Language is clear
Formulate to solve the engineering
 Relate experiment with theoretical concept discussed
problems: formulate and analyses to
CLO5 C2 in class
solve the electrical engineering  Describe relevant mathematical equations
Report
problems.
Design and evaluate operational
performance: Use the fundamental  Discuss discrepancies between theoretical, simulation
CLO6 principles to design the system or C4 and experimental results
task based on the given  Possible sources of discrepancies and ways to improve
specifications

BJT Common Emitter Characteristics: Experiment 6

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BJT Common Emitter Characteristics: Experiment 6

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Experiment 6: BJT Common Emitter Characteristics

When another section of P or N type material is added to a PN diode junction, a three-section

6.6 Lab Report

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