International Islamic University Islamabad

Faculty of Engineering & Technology

Department of Electrical Engineering

ELECTRONIC CIRCUIT DESIGN-I LAB (EE202L)

Experiment No. 1: Diode Characteristics

Name of Student: ……………………………………

Registration No.: ……………………………………..

Date of Experiment: …………………………………

Submitted To: ………………………………………,..

Experiment No. 1: Diode Characteristics Page 1

Objectives:
 To become familiar with the output (V-I) characteristics of a Silicon (Si) diode.
 To obtain the DC and AC resistance of Silicon (Si) diode.
 To plot the forward characteristics of a Silicon diode
 To obtain the firing potential of Silicon (Si) diode experimentally.
 T analyze the effect of temperature on Silicon (Si) diode
Equipment Required:
 DMM
 DC Power Supply: +12V (fixed); +12V (variable);
 Resistors: 1-kΩ [Qty =1] ; 10-MΩ [Qty =1];
 Silicon Diode (1N4007) [Qty =1];
 Connecting wires
Theory:

Most modern-day DMMs can be used to determine the condition of a diode. They have a
scale denoted by a diode symbol that will indicate the condition of a diode in the forward and
reverse-bias regions. If connected to establish a forward-bias condition, the meter will display
the forward voltage across the diode at a current level typically in the neighborhood of 2mA. If
connected to establish a reverse-bias condition, an “OL” should appear on the display to support
the open-circuit approximation frequently applied to this region. If the meter does not have the
diode-checking capability, then the condition of the diode can also be checked by obtaining some
measure of the resistance level in the forward and reverse-bias regions. Both techniques for
checking a diode will be introduced in the first part of the experiment.
The characteristics of a Silicon or Germanium diode have the general shape shown in
Figure 1.1. Note the change in scale for both the vertical and horizontal axes. In the reverse-
biased region, the reverse saturation currents are fairly constant from 0V to the Zener potential.
In the forward-bias region, the current increases with increasing diode voltage. Note that the
curve is rising almost vertically at a forward-biased voltage of less than 1V. The forward-biased
diode current will be limited solely by the network in which the diode is connected or by the
maximum current or power rating of the diode.
The firing potential or threshold voltage is determined by extending a straight line
tangent to the curves until it hits the horizontal axis (Forward Bias Region). The intersection with
the VD axis will determine the threshold voltage VT.

Experiment No. 1: Diode Characteristics Page 2

 Figure 1.1: Characteristics of Silicon and Germanium Diode
The DC or Static resistance (RDC) of a diode at any point on the characteristics is
determined by the ratio of the diode voltage at that point divided by the diode current. That is,
𝐕𝐃
RDC = Ω …………… (1.1)
𝐈𝐃

The AC resistance (rd) at a particular diode current or voltage can be determined by

using a tangent line drawn as shown in Figure 1.2. The resulting voltage and current deviations
can then be determined and the following equation applied.
∆𝐕𝐃
𝐫𝐝 = Ω …………… (1.2)
∆𝐈𝐃

Figure 1.2

Experiment No. 1: Diode Characteristics Page 3

 It can be shown through differential calculus that the AC resistance of a diode in the
vertical-rise section of the characteristics is given by,
𝟐𝟔𝐦𝐕
rd = 𝐈𝐃
Ω …………… (1.3)

For levels of current at and below the knee of the curve the AC resistance of a silicon
diode is better approximated by,
𝟐𝟔𝐦𝐕
rd = 2 * 𝐈𝐃
Ω …………… (1.4)

Procedure:
Part 1: Diode Test
The diode-testing scale of’ the DMM can be used to determine the condition of a diode.
With one polarity, the DMM should provide the “firing potential” of the diode, while the
reverse connection should result in an “OL” response which shows that diode in connected in
reverse biased condition. Figure 1.3 represents the symbolic diagram as well as outer structure
of an ordinary diode (Si or Ge).

Anode Cathode

Cathode
Anode
Figure 1.3
With the help of Figure 1.3, connect a DMM with the diode in such a way that a forward
biased connection has been established. Then, a voltage in the neighborhood of 0.7V (700 mV)
should be obtained for Silicon and 0.3V (300 mV) for Germanium. If the leads are reversed, an
OL indication should be obtained.
Open Diode:
In the case of an open diode, no current flows in either direction which is indicated by the
full checking voltage with the diode check function or high resistance using an ohmmeter in both
forward and reverse connections.
Shorted Diode:
In the case of a shorted diode, maximum current flows indicated by 0V with the diode
check function or low resistance with an ohm-meter in both forward and reverse connections.
Part 2: Forward-bias Diode Characteristics
In this part of the experiment, we will obtain sufficient data to plot the forward-bias
characteristics of the Silicon diode in Figure 1.5.

Experiment No. 1: Diode Characteristics Page 4

a. Construct the network of Figure 1.4 with the variable DC power supply (E) set to 0V.
Record the measured value of the resistor R.
R (measured) = ________

Figure 1.4
b. Increase the DC supply voltage (E) until VR reads 0.1 V. Then, measure VD and find out
ID using the equation given in Table 1.1. (Hint: VR is the measured voltage across resistor
whereas VD is the voltage across diode)
Table 1.1
VR (measured)
VR VD ID =
R (measured)
(measured) (measured) (measured)
(Volts) (Volts)
(mA)
0.1V
0.3V
0.5V
0.7V
0.9V
1V
2V
3V
4V
5V
6V
7V
8V
9V
10V

Experiment No. 1: Diode Characteristics Page 5

c. Repeat step b for the remaining values of VR (from 0.3V to 10V) and fill the Table 1.1.
d. On Figure 1.5, plot ID versus VD for the Silicon diode using the data of Table 1.1. Finish off
the curve by extending the lower region of the curve to the intersection of the axis at ID = 0
mA and VD = 0 V.

Figure 1.5
Part 3: Reverse-Bias Diode Characteristics

a. In Figure 1.6, a reverse-bias condition has been established. Since the reverse saturation
current will be relatively small, a large resistance of MΩ is required if the voltage across
resistor (R) is to be of measurable dimensions. Construct the circuit of Figure 1.6. Measure
the resistance (R) using DMM and record it.

Figure 1.6

Experiment No. 1: Diode Characteristics Page 6

b. Measure the voltage VR. and find the reverse saturation current (Is).
𝐕𝐑
Is =
𝐑 || 𝐑𝐃𝐌𝐌

The internal resistance of the DMM (RDMM) is included because of the large magnitude of the
resistance R. Your instructor will provide the internal resistance of the DMM for your
calculations. If unavailable, use a typical value of 10 MΩ.
R (measured) =__________
E (measured) =__________

VR (measured) = __________

Is (measured) = __________

c. Determine the DC resistance level for the Silicon diode (in reverse bias) using the equation,
𝐕𝐃 𝐕𝐃 𝐄−𝐕𝐑
RDC (reverse-bias) = = =
𝐈𝐃 𝐈𝐬 𝐈𝐬

RDC (in reverse bias) = _________

d. Is the resistance level of diode (in reverse bias) sufficiently high to be considered open
circuit equivalent if appearing in series with resistors in the low kΩ range?
__________________________________________________________________________
__________________________________________________________________________

Part 4: DC Resistance in Forward Bias

a. Using the Si curve of Figure 1.5, determine the diode voltage at diode current levels
indicated in the Table 1.2. Then, determine the DC resistance at each current level using
equation 1.1.
Table 1.2

ID VD RDC
(mA) (Volts) (in forward bias)
0.3 mA

1 mA

3 mA

5 mA

Experiment No. 1: Diode Characteristics Page 7

b. Is there any trend in DC resistance as the diode current increases and we move up the
vertical-rise section of the characteristics?
_________________________________________________________________________
________________________________________________________________________

Part 5: AC Resistance in Forward Bias

a. Using equation 1.2, determine the AC resistance of the Silicon diode at ID = 2mA with the
help of curve given in Figure 1.5.
(Hint: Draw a straight line tangent to the curve through the Q –point “2mA”.)
∆𝐕𝐃
rd =
∆𝐈𝐃

rd (measured) = ____________
b. Follow the step 5(a) to determine the AC resistance of the Silicon diode at ID = 7mA.

rd (measured) = ____________
c. How do the results of step 5(a) and 5(b) compare?
___________________________________________________________________________
___________________________________________________________________________

Part 6: Firing Potential

a. Graphically, determine the firing potential (threshold voltage) of Silicon diode from its
characteristics curve and verify using straight-line approximations on Figure 1.5.
VT (Silicon) = ____________

Part 7: Temperature Effects (Demonstration)

a. Reconstruct the circuit of Figure 1.4 on the breadboard using the silicon diode. Establish a
current of about 1mA by setting VR to 1V.
b. Place the DMM across the diode. Select the suitable volt scale. Note the reading as the
instructor heats the diode with the heat gun. Record the value of VD.

VD (measured) = __________
c. Let the diode cool down and then measure the voltage across the resistor R and note the
effect on VR of heating the diode.

Experiment No. 1: Diode Characteristics Page 8

 VR (measured) = __________
𝐕𝐑
d. Obtain the diode current as ID = .
𝐑

ID (measured) = __________
𝐕𝐃
e. Obtain the DC resistance of the diode as RDC = .
𝐈𝐃

RDC (measured) = __________

f. Compare this value of RDC with that obtained in Part 4 and comment.
__________________________________________________________________________
__________________________________________________________________________
g. Does a semiconductor diode have a positive or negative temperature coefficient? Explain.
___________________________________________________________________________
___________________________________________________________________________

Experiment No. 1: Diode Characteristics Page 9