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Mobile Carrier Action: Instructor: DR - Eng. Arief Udhiarto Source: Prof. Nathan Cheung, U.C. Berkeley

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This document contains lecture slides from a class on semiconductor carrier transport. It discusses several key topics in 3 sentences or less each: 1) How carrier concentration and the Fermi energy level vary with temperature in semiconductors. 2) The effective mass of electrons and different types of carrier scattering mechanisms. 3) How carriers drift in response to an electric field and how their mobility depends on doping concentration. 4) How electrical conductivity, resistivity, and resistance are defined and related.

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20 views23 pages

Mobile Carrier Action: Instructor: DR - Eng. Arief Udhiarto Source: Prof. Nathan Cheung, U.C. Berkeley

Uploaded by

Mess Yeah
This document contains lecture slides from a class on semiconductor carrier transport. It discusses several key topics in 3 sentences or less each: 1) How carrier concentration and the Fermi energy level vary with temperature in semiconductors. 2) The effective mass of electrons and different types of carrier scattering mechanisms. 3) How carriers drift in response to an electric field and how their mobility depends on doping concentration. 4) How electrical conductivity, resistivity, and resistance are defined and related.

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© All Rights Reserved
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Mobile Carrier Action

Reading Assignment
Pierret : Chap 2 and Chap 3

Instructor : Dr.Eng. Arief Udhiarto


Source : Prof. Nathan Cheung, U.C. Berkeley
Carrier Concentration vs Temperature

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Dependence of Ef on Temperature

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Degenerate Semiconductors
If dopant concentrations are very high such that EF is < 3kT
from EC or EV, we have to to use the full Fermi-Dirac
probability function

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Electron as Moving Particle

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Semiconductor Carriers Effective Mass

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Carrier Scattering
Because of scattering, mobile cariers in a semiconductor
do not achieve constant acceleration. However, they can
be viewed as classical particles moving at a constant
average drift velocity

1) “Lattice Vibration (phonons) scattering”


-No dopant dependence
-Increases with increasing temperature
2) Ionized impurity scattering
-Increases with NA +ND (total dopant conc)
-Decreases with increasing temperature

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Carrier Drift
 With an electric field, mobile charge-carriers
will be accelerated by the electrostatic force.
This force superimposes on the random
thermal motion of electrons:

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 The average current in any direction
is zero, if no electric field is applied
 Electrons drift in the direction
opposite to the E – field  Current
flows

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Electron Momentum
 With every collision, the electron loses
momentum

 Between collision, the electron gains


momentum

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Balancing momentum gain and
momentum lost

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Mobility Dependence on Doping

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Electrical Conductivity σ
 When an electric field is applied, current flows
due to drift of mobile electrons and holes:

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Electrical Resistivity ρ

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Electrical Resistance

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Example

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Example (continued)

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Temperature Effect on Mobility

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Example: Temperature Dependence of ρ

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Diffusion Current

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Diffusion Current Density
( Fick’s First Law)

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Total Current Density

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