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Carrier Modeling: Instructor: DR - Eng. Arief Udhiarto Source: U.C. Berkeley

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This document discusses carrier modeling in semiconductors. It covers topics like the Bohr model, bonding model, energy band model, conduction and valence bands, carriers in semiconductors, effective mass, donor and acceptor doping, density of states, Fermi-Dirac distribution, intrinsic carrier concentration, charge neutrality, and dependence of carrier concentration and Fermi level on temperature and doping concentration. The key aspects of carrier behavior in semiconductors and how doping manipulates the numbers of electrons and holes are explained.

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41 views43 pages

Carrier Modeling: Instructor: DR - Eng. Arief Udhiarto Source: U.C. Berkeley

Uploaded by

Mess Yeah
This document discusses carrier modeling in semiconductors. It covers topics like the Bohr model, bonding model, energy band model, conduction and valence bands, carriers in semiconductors, effective mass, donor and acceptor doping, density of states, Fermi-Dirac distribution, intrinsic carrier concentration, charge neutrality, and dependence of carrier concentration and Fermi level on temperature and doping concentration. The key aspects of carrier behavior in semiconductors and how doping manipulates the numbers of electrons and holes are explained.

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Carrier Modeling

Reading Assignment : R.F. Pierret Chap 2

Instructor : Dr.Eng. Arief Udhiarto


Source : U.C. Berkeley
The quantization concept
Bohr Model

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Semiconductor Models

• Bonding Model
• Energy Band Model
Bonding Model

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Bonding Model

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Bond Model of Electrons and Holes

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Energy band Model

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Conduction Band and Valence Band

Electron
Potential
Energy

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The Simplified Energy Band Diagram

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Carriers

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Semiconductors, Insulators, and
Conductors

• Totally filled band and totally empty bands do not allow


current flow. (just as there is no motion of liquid in a
totally filled or totally empty bottle
• Metal conduction band is half-filled
• Semiconductors have lower Eg’s than insulators and
can be doped

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Carrier Properties
Electron as Moving Particle

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Semiconductor Carriers Effective Mass

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Electrons and Holes

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Carrier Concentrations of Pure
(“intrinsic”) Semiconductor
 For each electron in the
conduction band (i.e. an
occupied state in CB),
there must be a hole in
the valence band (i.e.
unoccupied state in VB)
Therefore n= p which can
defined as an intrinsic
concentration ni

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Intrinsic Carrier Concentration
versus Temperature

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Manipulation of Carrier
Numbers - Doping
Doping
 By substituting a Si atom with a special impurity atom
(Column V or Column III element), a conduction electron
or hole is created.

Dopant concentrations typically range from 1014 cm-3 to 1020 cm-3

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Energy Band Description of Electrons and Holes
Contributed by Donors and Acceptors

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N-type (Arsenic) Doped Silicon
and Its Donor Energy Band

Conducting band, Ec
Si Si Si
Extra
Ed ~ 0.05 eV
Electron
Si As Si Eg = 1.1 eV

Si Si - Si
Valence band, Ev

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P-type (Boron) Doped Silicon
and Its Acceptor Energy Band

Conducting band,
Si Ec
Si Si
Hole
Eg = 1.1 eV
Si B Si

Ea ~ 0.05 eV
Si Si - Si
Valence band, Ev
Electron

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State and Carrier
Distributions

• Density of States
• The Fermi Function
Density of States

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Density of States at Conduction Band:
The Greek Theater Analogy

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The Fermi-Dirac Distribution
(Fermi Function)
Probability of available states at energy E being occupied f(E) =
1/ [1+ exp (E- Ef) /kT]
where Ef is the Fermi energy and k = Boltzmann constant=8.617
.10-5 eV/K

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Properties of the Fermi-Dirac
Distribution
(1) f(E) .exp [- (E- Ef) /kT] for (E- Ef) >3kT
This approximation is called Boltzmann approximation

(2) Probability of available states at energy E NOT being occupied


1- f(E) = 1/ [1+ exp (Ef -E) /kT]

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Equilibrium Carrier
Concentrations
Formula for n and p

 Integrate n(E) over all the energies in the


conduction band to obtain

 By using Boltzmann approximation, and extending


the integration limit to ~, we obtain

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 Integrate p(E) over all energies in the valance
band to optain p

 By using Boltzmann approximation, and


extending the integration limit to ~, we obtain

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Fermi Energy (Ei) of Intrinsic
Semiconductor

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Physical Interpretation of NC and NV

The average electron energy <E> of all electrons in conduction band is only 1.5kT above Ec !
We can treat all the available density of states in the conductor band as a single energy level exactly
at EC, with an effective density of states of NC.
The electron concentration can simply be calculated as NC * f(E=EC).

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Charge Neutrality Condition

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Charge-Carrier Concentrations
n : electron concentration (cm-3)
p : hole concentration (cm-3)
N+D : ionized donor concentration (cm-3) ≡ND
N-A : ionized acceptor concentration (cm-3) ≡ NA

(1) Charge neutrality condition:ND +p =NA +n


(2) At thermal equilibrium, np =ni2 (“Law of Mass
Action”)

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n-type and p-type Semiconductors

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The Fermi Energy Ef for doped
semiconductors can be determined from
either one of the following relationships
once n and p are known

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Dependence of Fermi Level with Doping
Concentration

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Carrier Concentration vs Temperature

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