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The document discusses the characteristics of bipolar junction transistors (BJTs) and phototransistors. It defines the function of the base region in a transistor as bringing interaction between the emitter and collector regions. The base is made thin and lightly doped so that most charge carriers from the emitter pass to the collector. It also describes the voltage across the collector and emitter terminals in different operating regions, and the transition point from saturation to active region in the I-V curves. Key differences between photodiodes and phototransistors are also summarized such as sensitivity, noise immunity and output response speed.

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Liaqat Ahamed
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128 views

Post Lab Questions

The document discusses the characteristics of bipolar junction transistors (BJTs) and phototransistors. It defines the function of the base region in a transistor as bringing interaction between the emitter and collector regions. The base is made thin and lightly doped so that most charge carriers from the emitter pass to the collector. It also describes the voltage across the collector and emitter terminals in different operating regions, and the transition point from saturation to active region in the I-V curves. Key differences between photodiodes and phototransistors are also summarized such as sensitivity, noise immunity and output response speed.

Uploaded by

Liaqat Ahamed
Copyright
© © All Rights Reserved
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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CHARACTERISTICS OF BJT AND PHOTO

TRANSISTOR

POST LAB QUESTIONS:


1. What is the function of base region of a transistor? Why this region
is made thin and lightly doped?
 In a transistor, the base region brings an interaction between emitter and
collector.
 The base is kept thin and slightly doped so that, when emitter of
transistor is forward biased, the less number of electron-hole combination
takes place in base region and majorityof charge carriers going from
emitter towards base, pass over to collector.
 As a result of it, the collector current becomes quite good in comparison
to base current.

2. What is the voltage across the collector to emitter terminal when


the transistor is in (i) saturation (ii) cut-off (iii) active region?
 Saturation region: VCE is approximately equal to 0.2 in the saturation
region
 Cut-Off region: VCE becomes nearly equal to VCC in the cut-off region
 Active region: VCE must be greater than 0.2 to operate in the Active
region

3. Describe, based on your observations, the I-V curves of npn


transistor. At approximately what collector-emitter voltage (VCE)
does the transition from saturation to active region occur?
 The most important characteristics of transistor in any configuration are
input and output characteristics,
A. Input Characteristics:

 It is the curve between input current In and input voltage Vin constant
collector emitter voltage VCE. The input characteristic resembles a
forward biased diode curve.
 After cut in voltage the IB increases rapidly with small increase in VBE. It
means that dynamic input resistance is small in CE configuration. It is the
ratio of change in VBE to the resulting change in base current at constant
collector emitter voltage.

B. Output Characteristics:
 This characteristic shows relation between collector current Ic and
collector voltage for various values of base current. The change in
collector emitter voltage causes small change in the collector current for
the constant base current, which defines the dynamic resistance.
 The output characteristic of common emitter configuration consists of
three regions: Active, Saturation and Cut-off.
 Active region: In this region base-emitter junction is forward biased and
base-collector junction is reversed biased. The curves are approximately
horizontal in this region.
 Saturation region: In this region both the junctions are forward biased.
 Cut-off: In this region, both the junctions are reverse biased. When the
base current is made equal to zero, the collector current is reverse
leakage current IcEO. The region below IB=0 is the called the cutoff
region.
 As the base voltage approaches the emitter voltage the collector to
emitter circuit begins to conduct and the output collector voltage drops to
a value less than the biased off voltage. The transistor is now said to be
in the active region
 The transition from saturation to active region occur when
VCE > 0.2
4.Describe the necessary conditions operation in the active region in
terms of VBE and VCE.
To operate in active mode, a transistor's VBE must be greater than zero and VBC
must be negative. Thus, the base voltage must be less than the collector, but
greater than the emitter. That also means the collector must be greater than the
emitter.
VC > VB > VE
In reality, we need a non-zero forward voltage drop from base to emitter (VBE)
to "turn on" the transistor. Usually this voltage VBE is usually around 0.6V-
0.7V, And VCE> 0.2
5.Differentiate photodiode and phototransistor.

PARAMETER PHOTODIODE PHOTOTRANSISTOR


CONSIST OF Semiconductor diode Junction Transistor
Symbol

Operational High Low


speed
Sensitivity Low High

Noise Less immune More immune


interference
Output Fast Slow
response
High frequency Provides better results Provide poor results
response

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