Electronics Notes

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Electronics
1. Semiconductor Physics…………………………………………………………………(1-41)
1.1 Metals, Semiconductors, and Insulators
1.2 Direct and Indirect Semiconductors
1.3 Electrons and Holes
1.3.1 Effective Mass
1.4 Intrinsic Material
1.5 Extrinsic Material
1.6 The Fermi Level
1.6.1 Electron and Hole Concentrations at Equilibrium
1.7 Temperature Dependence of Carrier Concentrations
1.8 Compensation and Space Charge Neutrality
1.9 Current Components in Semiconductor
1.9.1 Drift current (Conductivity and Mobility)
1.9.2 Diffusion Current
1.9.3 Einstein Relationship
1.9.4 Total Current in a Semiconductor
1.10 Effects of Temperature and Doping on Mobility
1.11 The Potential Variation within a Graded Semiconductor
1.11.1 An Open-Circuited Step-graded Junction
Summary
2. P-N Junction Diode…………………………………………………………………(42-110)
2.1 Semiconductor Diode
2.1.1 No Applied Bias
2.1.2 Reverse Bias Condition
2.1.3 Forward Bias Condition
2.1.4 Ideal Diode
2.1.5 Diode Characteristics
2.1.6 Diode Equation

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2.1.7 Breakdown Diodes

2.1.8 The Temperature Dependence of the V-I Characteristics
2.2 Diode Resistances
2.2.1 DC or Static Resistance
2.2.2 AC or Dynamic Resistance
2.3 Diode Capacitances
2.3.1 Space-Charge or Transition Capacitance
2.3.2 Diffusion Capacitance
2.4 Load Line Analysis
2.5 Series Diode Configurations with DC Inputs
2.6 Parallel and Series–Parallel Configurations
2.7 Rectifiers
2.7.1 Half-Wave Rectification
2.7.2 Full Wave Rectification
(i) Bridge Network
(ii)Center-Tapped transformer
2.8 Clippers
2.8.1 Series Clippers (Positive and Negative)
2.8.2 Parallel Clippers (Positive and Negative)
Summary
2.9 Clampers
Summary
2.10 Zener Diode
2.10.1 Case-I (Vi and RL fixed ) )
2.10.2 Case-II ( fixed Vi and variable RL )

2.10.3 Case-III ( fixed RL and variable Vi )
2.10.4 Zener as a Reference Levels

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3. Bipolar Junction Transistors………………………………………………………..(111-152)

3.1 Transistor Construction
3.2 Transistor Operation
3.3 Transistor Configurations
3.3.1 Common Base Configuration
3.3.2 Common Emitter Configuration
3.3.3 Common Collector Configuration
3.4 DC Biasing-BJTs
3.4.1 Introduction
3.4.2 Operating Point
3.5 Fixed -Bias Circuit
3.5.1 Q-point
3.5.2 Transistor Saturation
3.5.3 Load-Line Analysis
3.6 Emitter-Stabilized Bias Circuit
3.6.1 Q-point
3.6.2 Saturation Level
3.7 Voltage-Divider Bias
3.7.1 Q-point
3.8 DC Bias with Voltage Feedback
3.8.1 Q-point
3.8.2 Saturation Conditions

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4. Operational Amplifier………………………………………………………………(153-207)
4.1 Characteristics of an Op-Amp
4.1.1 Input Offset Voltage
4.1.2 Input Offset Current
4.1.3 Input Bias Current
4.1.4 Differential Input Resistance
4.1.5 Common-mode Rejection Ratio (CMRR)
4.1.6 Supply Voltage Rejection Ratio
4.1.7 Large-signal Voltage Gain
4.1.8 Output Voltage Swing
4.1.9 Output Resistance
4.1.10 Transient Response
4.1.11 Slew Rate
4.1.12 Gain-Bandwidth Product
4.1.13 The Ideal Op-Amp
4.1.14 Equivalent Circuit of an Op-Amp
4.1.15 Ideal Voltage Transfer Curve
4.2 Open-Loop Op-Amp Configurations
4.2.1 The Differential Amplifier
4.2.2 The inverting Amplifier
4.2.3 The Non-inverting Amplifier
4.3 An Op-Amp with Negative Feedback
4.3.1 Block Diagram Representation of Feedback Configurations
4.4 Voltage-Series Feedback Amplifier
4.4.1 Negative Feedback
4.4.2 Closed-Loop Voltage Gain
4.4.3 Difference Input Voltage Ideally Zero
4.4.4 Input Resistance with Feedback
4.4.5 Output Resistance with Feedback

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4.4.6 Bandwidth with Feedback

4.4.7 Total Output Offset Voltage with Feedback
4.4.8 Voltage Follower
4.5 Voltage-Shunt Feedback Amplifier
4.5.2 Inverting Input Terminal at Virtual Ground
4.5.7 Current-to-Voltage Converter
4.6 Differential Amplifiers
4.6.1 Differential Amplifier with One Op-Amp
4.6.2 Differential Amplifier with Two Op-Amps
4.7 The Practical Op-Amp
4.8 Summing, Scaling and Averaging Amplifier
4.8.1 Inverting Configuration
4.8.2 Non-inverting Configuration
4.8.3 Differential Configuration
4.9 The Integrator
4.10 The Differentiator
4.11 Active Filters
4.11.1 First-Order Low-Pass Filter
4.11.2 Second-Order Low-Pass Filter
4.11.3 First-Order High-Pass Filter
4.11.4 Second-Order High-Pass Filter
4.11.5 Band-Pass Filter
4.11.6 All-Pass Filter
4.12 Oscillators

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5. Digital Electronics…………………………………………………………………(208-254)
5.1 Number System
5.1.1 Decimal Number System
5.1.2 Binary Number System
5.1.3 Octal Number System
5.1.4 Hexadecimal Number System
5.2 Logic Gates
5.2.1 The Inverter
5.2.2 The AND Gate
5.2.3 The OR Gate
5.2.4 The NAND Gate
5.2.5 The NOR Gate
5.2.6 OR Gate (Positive Logic and Negative Logic)
5.2.7 AND Gate (Positive Logic and Negative Logic)
5.3 Logic Expressions
5.3.1 NOT
5.3.2 AND
5.3.3 OR
5.3.4 NAND
5.3.5 NOR
5.4 Rules for Boolean algebra
5.4.1 Demorgan’s Theorems
5.5 Boolean Expressions for Gate Networks
5.5.1 Sum-of-Product Form
5.5.2 Product-of-Sums Form
5.6 Simplification of Boolean Expressions
5.6.1 Boolean algebra techniques
5.6.2 The Karnaugh Map
5.7 Universal Gates

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1. Semiconductor Physics
1.1 Metals, Semiconductors, and Insulators

Every solid has its own characteristic energy band structure. This variation in band
structure is responsible for the wide range of electrical characteristics observed in various
materials. The diamond band structure for example, can give a good picture of why
carbon in the diamond lattice is a good insulator. To reach such a conclusion, we must
consider the properties of completely filled and completely empty energy bands in the
current conduction process.
Before discussing the mechanisms of current flow in solids further, we can
observe here that for electrons to experience acceleration in an applied electric field, they
must be able to move into new energy states. This implies there must be empty states
(allowed energy states which are not already occupied by electrons) available to the
electrons. For example, if relatively few electrons reside in an otherwise empty band,
ample unoccupied states are available into which the electrons can move. On the other
hand, the diamond structure is such that the valence band is completely filled with
electrons at 0 K and the conduction band is empty. There can be no charge transport
within the valence band, since no empty states are available into which electrons can
move. There are no electrons in the conduction band, so no charge transport can take
place there either. Thus carbon in the diamond structure has a high resistivity typical of
insulators.
Semiconductor materials at 0 K have basically the same structure as
insulators-a filled valence band separated from an empty conduction band by a band gap
containing no allowed energy states (Figure 1.1). The difference lies in the size of the
band gap Eg which is much smaller in semiconductors than in insulators. For example,
the semiconductor Si has a band gap of about 1.1 eV compared with 5 eV for diamond.
The relatively small band gaps of semiconductors allow for excitation of electrons from
the lower (valence) band to the upper (conduction) band by reasonable amounts of
thermal or optical energy.
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For example, at room temperature a semiconductor with a 1 eV band gap will have a
significant number of electrons excited thermally across the energy gap into the
conduction band whereas an insulator with Eg = 10 eV will have a negligible number of
such excitations. Thus an important difference between semiconductors and insulators is

that the number of electrons available for conduction can be increased greatly in
semiconductors by thermal or optical energy.
In metals the bands either overlap or are only partially filled. Thus electrons and
empty energy states are intermixed within the bands so that electrons can move freely
under the influence of an electric field. As expected from the metallic band structures,
metals have a high electrical conductivity.
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Figure 1.1: Insulator Semiconductor Metal
1.2 Direct and Indirect Semiconductors

When quantitative calculations are made of band structures, a single electron is assumed
to travel through a perfectly periodic lattice. The wave function of the electron is
assumed to be in the form of a plane wave moving, for example, in the x -direction with
propagation constant k , also called a wave vector. The space-dependent wave function
for the electron is
ψ k ( x ) = U ( k x , x ) eik x x
where the function U ( k x , x ) modulates the wave function according to the periodicity of
the lattice.
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In such a calculation, allowed values of energy can be plotted vs. the propagation
constant k . Since the periodicity of most lattices is different in various directions, the
( E , k ) diagram must be plotted for the various crystal directions and the full relationship
between E and k is a complex surface which should be visualized in three dimensions.
The band structure of GaAs has a minimum in the
conduction band and a maximum in the valence band for the same k value ( k = 0 ) . On
the other hand, Si has its valence band maximum at a different value of k than its
conduction band minimum. Thus an electron making a smallest-energy transition from
the conduction band to the valence band in GaAs can do so without a change in k value;
on the other hand a transition from the minimum point in the Si conduction band to the
maximum point of the valence band requires some change in k . Thus there are two
classes of semiconductor energy bands direct and indirect (Figure 1.2). We can show that
an indirect transition involving a change in k requires a change of momentum for the
electron.
E E
Et
hν = E g
Eg
k
k
(a) Direct (b) Indirect
Figure 1.2: Direct and indirect electron transitions in semiconductors: (a) direct
transition with accompanying photon emission; (b) indirect transition via a defect level.

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In a direct semiconductor such as GaAs , an electron in the conduction band can fall to an
empty state in the valence band, giving off the energy difference Eg as a photon of light.
On the other hand, an electron in the conduction band minimum of an indirect

semiconductor such as Si cannot fall directly to the valence band maximum but must
undergo a momentum change as well as changing its energy. For example, it may go
through some defect state ( Et ) within the band gap. In an indirect transition which
involves a change in k , the energy is generally given up as heat to the lattice rather than
as an emitted photon. This difference between direct and indirect band structures is very
important for deciding which semiconductors can be used in devices requiring light
output. For example, semiconductor light emitters and lasers generally must be made of
materials capable of direct band-to-band transitions or of indirect materials with vertical
transitions between defect states.
1.3 Electrons and Holes
As the temperature of a semiconductor is raised from 0 K , some electrons in the valence
band receive enough thermal energy to be excited across the band gap to the conduction
band. The result is a material with some electrons in an otherwise empty conduction band
and some unoccupied states in an otherwise filled valence band (Figure 1.3). For
convenience, an empty state in the valence band is referred to as a hole. If the conduction
band electron and the hole are created by the excitation of a valence band electron to the
conduction band, they are called an electron-hole pair (abbreviated EHP).
Ec
Eg
•••••••••••••••••••••••••••••••••••••• Ev
••••••••••••••••••••••••••••••••••••••
••••••••••••••••••••••••••••••••••••••
••••••••••••••••••••••••••••••••••••••
Figure 1.3: Electron-hole pairs in a semiconductor.

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After excitation to the conduction band, an electron is surrounded by a large number of

unoccupied energy states. For example, the equilibrium number of electron-hole pairs in
pure Si at room temperature is only about 1010 EHP / cm3 , compared to the Si atom
density of more than 1022 atoms / cm3 . Thus the few electrons in the conduction band are
free to move about via the many available empty states.
1.3.1 Effective Mass
The electrons in a crystal are not completely free, but instead interact with the periodic
potential of the lattice. As a result, their “wave-particle” motion can-not be expected to be
the same as for electrons in free space. Thus, in applying the usual equations of
electrodynamics to charge carriers in a solid, we must use altered values of particle mass.
In doing so, we account for most of the influences of the lattice, so that the electrons and
holes can be treated as “almost free” carriers in most computations. The calculation of
effective mass must take into account the shape of the energy bands in three-dimensional
k -space, taking appropriate averages over the various energy bands.
Example: Find the ( E , k ) relationship for a free electron and relate it to the electron
mass.
E
Solution:
The electron momentum is p = mv = k . Then
1 2 1 p2 2
E = mv = = k2
2 2 m 2m k
Thus the electron energy is parabolic with wave vector k .
The electron mass is inversely related to the curvature (second derivative) of the ( E , k )
d 2E 2
relationship, since = .
dk 2 m
Although electrons in solids are not free, most energy bands are close to parabolic at their
minima (for conduction bands) or maxima (for valence bands). We can also approximate
effective mass near those band extrema from the curvature of the band.

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The effective mass of an electron in a band with a given ( E , k ) relationship is given by
2
m* =
d 2 E / dk 2
A particularly interesting feature is that the curvature d 2 E / dk 2 is positive at the
conduction band minima, and is negative at the valence band maxima. Thus, the electrons
near the top of the valence band have negative effective mass. Valence band electrons
with negative charge and negative mass move in an electric field in the same direction as
holes with positive charge and positive mass. We can fully account for charge transport
in the valence band by considering hole motion.
In any calculation involving the mass of the charge carriers, we must use effective mass
values for the particular material involved. Table given below lists the effective masses
for Ge , Si , and GaAs appropriate for one type of calculation. In this table and in all
subsequent discussions, the electron effective mass is denoted by mn* and the hole
effective mass by m*p . The n subscript indicates the electron as a negative charge carrier,
and the p subscript indicates the hole as a positive charge carrier (The free electron rest
mass is m0 ).
Ge Si GaAs
mn* 0.55 m0 1.1 m0 0.067 m0
m*p 0.37 m0 0.56 m0 0.48 m0

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1.4 Intrinsic Material

A perfect semiconductor crystal with no impurities or lattice defects is called an intrinsic
semiconductor. In such material there are no charge carriers at 0 K , since the valence
band is filled with electrons and the conduction band is empty. At higher temperatures
electron-hole pairs are generated as valence band electrons are excited thermally across
the band gap to the conduction band. These EHPs are the only charge carriers in intrinsic
material.
The generation of EHPs can be visualized in a qualitative way by considering the
breaking of covalent bonds in the crystal lattice. If one of the Si valence electrons is
broken away from its position in the bonding structure such that it becomes free to move
about in the lattice, a conduction electron is created and a broken bond (hole) is left
behind. The energy required to break the bond is the band gap energy Eg . This model
helps in visualizing the physical mechanism of EHP creation, but the energy band mode
is more productive for purposes of quantitative calculation. One Important difficulty in
the “broken bond” model is that the free electron and the hole seem deceptively localized
in the lattice. Actually, the positions of the free electron and the hole are spread out over
several lattice spacing and should be considered quantum mechanically by probability
distributions.
Si
e −•
e−
•
h +
h+
e − : Electron
h + : Hole
Figure 1.4: Electron-hole pairs in the covalent bonding model of the Si crystal.

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Since the electrons and holes are created in pairs, the conduction band electron
concentration n (electrons per cm3) is equal to the concentration of holes in the valence
band p (holes per cm3). Each of these intrinsic carrier concentrations is commonly
referred to as ni . Thus for intrinsic material
n = p = ni .
At a given temperature there is a certain concentration of electron-hole pairs ni .

Obviously, if a steady state carrier concentration is maintained, there must be
recombination of EHPs at the same rate at which they are generated. Recombination
occurs when an electron in the conduction band makes a transition (direct or indirect) to
an empty state (hole) in the valence band, thus annihilating the pair. If we denote the
generation rate of EHPs as gi , (EHP/cm3) and the recombination rate as ri , equilibrium
requires that: ri = gi
Each of these rates is temperature dependent. For example, gi (T ) increases when the
temperature is raised, and a new carrier concentration ni , is established such that the
higher recombination rate ri (T ) just balances generation. At any temperature, we can
predict that the rate of recombination of electrons and holes ri is proportional to the
equilibrium concentration of electrons n0 and the concentration of holes p 0
ri = α r n0 p0 = α r ni2 = g i
The factor α r is a constant of proportionality which depends on the particular mechanism

by which recombination takes place.

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1.5 Extrinsic Material

In addition to the intrinsic carriers generated thermally, it is possible to create carriers in
semiconductor purposely by introducing impurities into the crystal. This process, called
doping is the most common technique for varying the conductivity of semiconductors. By
doping, a crystal can be altered so that it has a predominance of either electrons or holes.
Thus there are two types of doped semiconductors, n-type (mostly electrons) and p-type
(mostly holes).
When impurities or lattice defects are introduced into an otherwise perfect crystal,
additional levels are created in the energy band structure usually within the band gap. For
example, an impurity from column V of the periodic table (P, As, and Sb) introduces an
energy level very near the conduction band in Ge or Si. This level is filled with electrons
at 0 K , and very little thermal energy is required to excite these electrons to the
conduction band. Thus at about 50 K − 100 K virtually all of the electrons in the impurity
level are “donated” to the conduction band. Such an impurity level is called a donor level
and the column V impurities in Ge or Si are called donor impurities. From figure 1.5, we
note that the material doped with donor impurities can have a considerable concentration
of electrons in the conduction band, even when the temperature is too low for the intrinsic
EHP concentration to be appreciable. Thus semiconductors doped with a significant
number of donor atoms will have n0 >> (ni , p 0 ) at room temperature. This is n-type
material.
Ec • • • •
Ec
Ed • • • • Ed
Ev Ev
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••••••••••••• •••••••••••••
••••••••••••• •••••••••••••
T = 0K T = 50K
Figure 1.5: Donation of electrons from a donor level to the conduction band.

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Atoms from column III (B, Al, Ga, and In) introduce impurity levels in Ge or Si near the
valence band. These levels are empty of electrons at 0 K . At low temperatures, enough
thermal energy is available to excite electrons from the valence band into the impurity
level, leaving behind holes in the valence band, since this type of impurity level “accepts”
electrons from the valence band, it is called an acceptor level, and the column III
impurities are acceptor impurities in Ge and Si. Figure 1.6 indicates, doping with acceptor
impurities can create a semiconductor with a hole concentration p 0 much greater than the
conduction band electron concentration n0 (this is p-type material).
Ec Ec
Ea Ea • • • •
Ev Ev
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• • • • • • • • • • • • • • • • • • • • • • • • • •
• • • • • • • • • • • • • • • • • • • • • • • • • •
T = 0K T = 50 K
Figure 1.6: Acceptance of valence band electrons by an acceptor level, and the resulting
creation of holes.

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1.6 The Fermi Level

Electrons in solids obey Fermi-Dirac statistics. In the development of this type of
statistics, one must consider the indistinguishability of the electrons, their wave nature,
and the Pauli Exclusion Principle. The rather simple result of these statistical arguments
is that the distribution of electrons over a range of allowed energy levels at thermal
1
equilibrium is: f (E) = ( E − EF )
1+ e
kT
where k is Boltzmann constant. The function f ( E ) , the Fermi-Dirac distribution
function, gives the probability that an available energy state at E will be occupied by an
electron at absolute temperature T. The quantity EF is called the Fermi Level, and it
represents an important quantity in the analysis of semiconductor behavior. We notice
that, for an energy E equal to the Fermi level energy EF , the occupation probability is
−1 1 1
f ( EF ) = ⎡⎣1 + e( EF − EF ) / kT ⎤⎦ = = .
1+1 2
A closer examination of f ( E ) indicates that at 0 K the distribution takes the simple
rectangular form shown in figure 1.7. With T = 0 in the denominator of the exponent,
f ( E ) is 1/(1 + 0) = 1 when the exponent is negative (E < EF), and is 1/ (1 + ∞) = 0 when
the exponent is positive (E > EF). This rectangular distribution implies that at 0 K every
available energy state up to EF is filled with electrons and all states above EF are empty.
f (E )
T = 0K
1
T2 > T1
1/ 2 T1
T2
EF E
Figure 1.7: The Fermi Dirac distribution function.

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At temperatures higher than 0 K , some probability exists for states above EF to be filled.
For example, at T = T1 there is some probability f ( E ) that states above EF are filled,
and there is a corresponding probability ⎡⎣1 − f ( E ) ⎤⎦ that states below EF are empty.
The Fermi function is symmetrical about EF for all temperatures;

that is the probability f ( EF + ΔE ) that a state ΔE above EF is filled is the same as the
probability ⎡⎣1 − f ( EF − ΔE ) ⎤⎦ that a state ∆E below EF is empty. The symmetry of the
distribution of empty and filled states about EF makes the Fermi level a natural reference
point in calculations of electron and hole concentrations in semiconductors.
For intrinsic material we know that the concentration of holes in the valence band is
equal to the concentration of electrons in the conduction band. Therefore, the Fermi level
EF must lie at the middle of the band gap in intrinsic material [Figure 1.8a]. Since f ( E )
is symmetrical about EF , the electron probability "tail" of f ( E ) extending into the
conduction band is symmetrical with the hole probability tail ⎡⎣1 − f ( E ) ⎤⎦ in the valence
band. The distribution function has values within the band gap between Ec and Ev but
there are no energy states available, and no electron occupancy results from f ( E ) in this
range.
In n-type material there is a high concentration of electrons in the conduction band
compared with the hole concentration in the valence band. Thus in n-type material the
distribution function f ( E ) must lie above its intrinsic position on the energy scale (figure
1.8 b). Since f ( E ) retains its shape for a particular temperature, the larger concentration
of electrons at Ec in n-type material implies a correspondingly smaller hole concentration
at Ev . We notice that the value of f ( E ) for each energy level in the conduction band (and
therefore the total electron concentration n0 ) increases as EF moves closer to Ec . Thus
the energy difference ( Ec − EF ) gives a measure of n .

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For p-type material the Fermi level lies near the valence band (figure 1.8 c) such that the
⎡⎣1 − f ( E ) ⎤⎦ tail below Ev is larger than the f ( E ) tail above Ec . The value of ( EF − Ev )
indicates how strongly p-type the material is.

It is usually inconvenient to draw f ( E ) vs. E on every energy band diagram to indicate
the electron and hole distributions. Therefore, it is common practice merely to indicate
the position of EF in band diagrams.
f (E c ) E
E
f (E c )
Ec Ec
EF
EF
Ev Ev
f (E ) 1 1/ 2 0 f (E ) 1 1/ 2 0
(a ) Intrinsic (b ) n - type
[1 − f (Ev )] E
Ec
EF
Ev
f (E ) 1 1/ 2 0
(c ) p - type
Figure 1.8: The Fermi distribution function applied to semiconductors:
(a) Intrinsic material; (b) n-type material; (c) p-type material.

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1.6.1 Electron and Hole Concentrations at Equilibrium

The Fermi distribution function can be used to calculate the concentrations of electrons
and holes in a semiconductor, if the densities of available states in the valence and
conduction bands are known. For example, the concentration of electrons in the
conduction band is
∞
n0 = ∫ f ( E ) N ( E ) dE
Ec
where N ( E ) dE is the density of states (cm-3) in the energy range dE . The subscript 0
used with the electron and hole concentration symbols ( n0 , p 0 ) indicates equilibrium
conditions. The number of electrons per unit volume in the energy range dE is the
product of the density of states and the probability of occupancy f ( E ) . Thus the total
electron concentration is the integral over the entire conduction band. The
function N ( E ) can be calculated by using quantum mechanics and the Pauli Exclusion
Principle.
Since N ( E ) is proportional to E1/ 2 , so the density of states in the conduction band
increases with electron energy. On the other hand, the Fermi function becomes extremely
small for large energies. The result is that the product f ( E ) N ( E ) decreases rapidly
above Ec and very few electrons occupy energy states far above the conduction band
edge. Similarly, the probability of finding an empty state (hole) in the valence
band ⎡⎣1 − f ( E ) ⎤⎦ decreases rapidly below Ev and most holes occupy states near the top of
the valence band. This effect is demonstrated in figure 1.9, which shows the density of
available states, the Fermi function, and the resulting number of electrons and holes
occupying available energy states in the conduction and valence bands at thermal
equilibrium (i.e., with no excitations except thermal energy). For holes, increasing energy
points down, since the E scale refers to electron energy.

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E E E
Electrons
Ec Ec
EF
Ev Ev
Holes
(a) Intrinsic
E E E
Ec Ec
EF
Ev Ev
(b) n - type
E E E
Ec Ec
EF
Ev Ev
N (E )[1 − f (E )]
(c) p - type
0 0.5 1.0 Carrier
N (E ) f (E ) Concentration
Figure 1.9: Schematic band diagram, density of states, Fermi-Dirac distribution, and the
carrier concentrations for (a) intrinsic, (b) n-type, and (c) p-type semiconductors at
thermal equilibrium.

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∞
The result of the integration of n0 = ∫ f ( E ) N ( E ) dE is the same as that obtained if we
Ec
represent the entire distributed electron states in the conduction band by an effective
density of states N c located at the conduction band edge Ec . Therefore, the conduction
band electron concentration is simply the effective density of states at Ec times the
probability of occupancy at Ec
n0 = f ( Ec ) N c
In this expression we assume the Fermi level EF lies at least several kT below the
conduction band. Then the exponential term is large compared with unity and the Fermi
function f ( Ec ) can be simplified as
1
f ( Ec ) =
−( Ec − EF ) / kT
( Ec − EF ) / kT
≈e
1+ e
Since kT at room temperature is only 0.026 eV , this is generally a good approximation.
For this condition the concentration of electrons in the conduction band is
−( Ec − EF ) / kT ⎛N ⎞
n0 = N c e ⇒ Ec − EF = kT ln ⎜ c ⎟
⎝ n0 ⎠
3/ 2
⎛ 2π mn* kT ⎞
The effective density of states N c = 2 ⎜ 2 ⎟
⎝ h ⎠
Thus electron concentration increases as EF moves closer to the conduction band.
By similar arguments, the concentration of holes in the valence band is
p0 = N v ⎡⎣1 − f ( Ev ) ⎤⎦
where N c is the effective density of states in the valence band.
The probability of finding an empty state at Ev is,
1
1 − f ( Ev ) = 1 −
−( EF − Ev ) / kT
−( Ev − EF ) / kT
≈e for EF larger than Ev by several kT .
1+ e

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From these equations, the concentration of holes in the valence band is

.
⎛N ⎞
p0 = N v e ( F v ) ⇒ EF − Ev = kT ln ⎜ v ⎟
− E − E / kT
⎝ p0 ⎠
3/ 2
⎛ 2π m*p kT ⎞
The effective density of states in the valence band N v = 2 ⎜ ⎟⎟
⎜ h2
⎝ ⎠
Thus hole concentration increases as EF moves closer to the valence band.
The electron and hole concentrations predicted by above equations are valid whether the
material is intrinsic or doped, provided thermal equilibrium is maintained.
Thus for intrinsic material, EF lies, at some intrinsic level Ei near the middle of the
band gap, and the intrinsic electron and hole concentrations are
− ( Ec − Ei ) / kT − ( Ei − Ev ) / kT
ni = N c e , pi = N v e
Ec + Ev 3kT ⎛ m p ⎞
∗
Ec + Ev kT ⎛ N v ⎞
ni = pi ⇒ Ei = + ln ⎜ ⎟ ⇒ Ei = + ln ⎜ ∗ ⎟
2 2 ⎝ Nc ⎠ 2 4 ⎜m ⎟
⎝ n⎠
⎛ E ⎞
Note: The intrinsic level Ei is the middle of the band gap ⎜ Ec − Ei = g ⎟ , if the effective
⎝ 2 ⎠
densities of states N c and N c are equal. There is usually some difference in effective
mass for electrons and holes, however, and N c and N c are slightly different.
The product of n0 and p0 at equilibrium is a constant for a particular material and

temperature, even if the doping is varied:
( (
n0 p0 = N v e
− Ec − EF ) / kT
)( N e (
v
− EF − Ev ) / kT
)= N N e (
c v
− Ec − Ev ) / kT
= Nc Nve
− Eg / kT
n p = (N e ( )( N e ( )= N N e
− Ec − Ei ) / kT − Ei − Ev ) / kT − E g / kT
i i c v c v

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The intrinsic electron and hole concentrations are equal (since the carriers are created in
pairs), ni = pi ; thus the intrinsic concentration is
− Eg / 2 kT
ni = N c N v e
Law of Mass Action

The constant product of electron and hole concentrations can be written conveniently as
n0 p0 = ni2
For n-type material the minority concentration (holes)

ni2 ni2
pn = ≈ where N D is donor ion concentration.
nn N D
For p-type material the minority concentration (electrons)
ni2 ni2
np = ≈ where N A is acceptor ion concentration.
pp N A
Another convenient way of writing electron and hole concentration is

.
n0 = ni e(
EF − Ei ) / kT
p0 = ni e(
Ei − EF ) / kT
and
This form of the equation indicates directly that the electron concentration is ni when EF
is at the intrinsic level Ei and that n0 increases exponentially as the Fermi level moves
away from Ei toward the conduction band. Similarly, the hole concentration p0 varies
from ni to larger values as EF moves from Ei , toward the valence band. Since these
equations reveal the qualitative features of carrier concentration so directly, they are
particularly convenient to remember.

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1.7 Temperature Dependence of Carrier Concentrations

The variation of carrier concentration with temperature is indicated by equations
n0 = ni e(
EF − Ei ) / kT
p0 = ni e(
Ei − EF ) / kT
and . Initially, the variation of n0 and p0 with T
seems relatively straightforward in these relations. The problem is complicated, however,
by the fact that ni has strong temperature dependence ni = N c N v e ( − E g / 2 kT

) and that
EF can also vary with temperature. Let us begin by examining the intrinsic carrier
3/ 2
⎛ 2π kT ⎞
(m m )
3/ 4
ni (T ) = 2 ⎜ 2 ⎟ * * − E g / 2 kT
concentration. n p e
⎝ h ⎠
The exponential temperature dependence dominates ni (T ) and a plot of
ln ( ni ) vs 1000 / T appears almost linear (figure 1.10).

T (K )
500 400 300 250
1016
Ge
10 14
−3
• 2.5 ×10 cm
13
Si
10 12
(
n i cm −3 )
−3
•1.5 ×10 cm
10
10
10
GaAs
10 8
2 ×106 cm−3
•
10 6
1000 / T (K )
−1
Figure 1.10: Intrinsic carrier concentration for Ge, Si, and GaAs as a function of inverse
temperature. The room temperature values are marked for reference.

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1.8 Compensation and Space Charge Neutrality

Figure 1.11 illustrates a semiconductor for which both donors and acceptors are present,
but N D > N A . The predominance of donors makes the material n-type and the Fermi level
is therefore in the upper part of the band gap. Since EF is well above the acceptor
level Ea , this level is essentially filled with electrons. However, with EF above Ei we
cannot expect a hole concentration in the valence band commensurate with the acceptor
concentration. In fact, the filling of the Ea states occurs at the expense of the donated
conduction band electrons.
The mechanism can be visualized as follows: Assume an acceptor state is filled with a
valence band electron, with a hole resulting in the valence band. This hole is then filled
by recombination with one of the conduction band electrons. Extending this logic to all
the acceptor atoms, we expect the resultant concentration of electrons in the conduction
band to be N D − N A instead of the total N D . This process is called compensation. By this
process it is possible to begin with an n-type semiconductor and add acceptors until
N A = N D and no donated electrons remain in the conduction band. In such compensated
material n0 = ni = p0 and intrinsic conduction is obtained. With further acceptor doping
the semiconductor becomes p-type with a hole concentration of essentially N A − N D .
Ec • • • • • • • • • • • • •
Ed
EF
Ei
Ea • • • • • • •
Ev • • • • • • • • • • • • • • • • • • • • • •
• • • • • • • • • • • • • • • • • • • • • •
• • • • • • • • • • • • • • • • • • • • • •
• • • • • • • • • • • • • • • • • • • • • •
Figure 1.11: Compensation in an n-type semiconductor ( N D > N A ) .

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The exact relationship among the electron, hole, donor, and acceptor concentrations can
be obtained by considering the requirements for space charge neutrality. If the material
is to remain electrostatically neutral, the sum of the positive charges (holes and ionized
donor atoms) must balance the sum of the negative charges (electrons and ionized
acceptor atoms):
p0 + N D+ = n0 + N A−
Thus the net electron concentration in the conduction band is n0 = p 0 + ( N D+ − N A− ) .
If the material is doped n-type ( n0 p0 ) and all the impurities are ionized, we can
approximate that n0 = N D − N A .
Since the intrinsic semiconductor itself is electrostatically neutral and the doping atoms
we add are also neutral, the requirement of equation p0 + N D+ = n0 + N A− must be
maintained at equilibrium.
Knowledge of carrier concentrations in a solid is necessary for calculating current flow in
the presence of electric or magnetic fields. In addition to the values of n and p, we must
be able to take into account the collisions of the charge carriers with the lattice and with
the impurities. These processes will affect the ease with which electrons and holes can
flow through the crystal, that is, their mobility within the solid. As should be expected,
these collision and scattering processes depend on temperature, which affects the thermal
motion of the lattice atoms and the velocity of the carriers.

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Example: The donor concentration in a sample of n -type silicon is increased by a factor

of 100. Find the shift in the position of the Fermi level at 300K . (k B T = 25meV at 300 K )
Solution:
⎛N ⎞ ⎛ Nc ⎞ ⎛ Nc ⎞
EC − EF = kT ln ⎜ c ⎟ and EC − EF′ = kT ln ⎜ ⎟ = kT ln ⎜ ⎟ − kT ln (100 )
⎝ Nd ⎠ ⎝ 100 N d ⎠ ⎝ Nd ⎠
Thus shift is ΔE = kT ln (100 ) = 25ln (100 ) meV = 115.15 meV
Example: A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole
concentration p0 at 300 K ? Where is EF relative to Ei ? (where ni = 1.5 ×1010 cm −3 )
Solution:
Since N D ni we can approximate ni and Ec
EF
ni2 2.25 ×1020 0.407 eV
p0 = = 17
= 2.25 × 103 cm −3
n0 10 1.1 eV Ei
n0 1017
EF − Ei = kT ln = 0.0259 ln = 0.407eV
ni 1.5 ×1010 Ev
Example: A pure Si sample at 300K with intrinsic carrier concentration of 1.5 × 1016 / m 3
is doped with phosphorous. The equilibrium hole concentration and electron mobility is
2.25 × 10 9 / m 3 and 1350 cm 2 / Vs respectively. Find the position of Fermi-level relative
to the intrinsic level at 300 K .
Solution:
Equilibrium electron concentration is
np = ni2 ( Law of mass) ⇒ n =

ni2
=
(
1.5 × 1016 )
2
= 1.00 × 10 23 m −3
p 2.25 × 10 9
⎛n⎞ ⎛ 10 23 ⎞
EF − Ei = k BT ln⎜⎜ ⎟⎟ = 8.67 × 10 −5 × 300 × ln⎜⎜ ⎟ = 0.406 eV
16 ⎟
⎝ ni ⎠ ⎝ 1.5 × 10 ⎠

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1.9 Current Components in Semiconductor

1.9.1 Drift Current (Conductivity and Mobility)
The charge carriers in a solid are in constant motion, even at thermal equilibrium. At
room temperature, for example, the thermal motion of an individual electron may be
visualized as random scattering from lattice atoms, impurities, other electrons, and
defects (figure 1.12). Since the scattering is random, there is no net motion of the group
of n electrons / cm3 over any period of time. This is not true of an individual electron, of
course. The probability of the electron in returning to its starting point after some time t is
negligibly small. However, if a large number of electrons is considered (e.g. 1016 cm−3 in
an n-type semiconductor), there will be no preferred direction of motion for the group of
electrons and no net current flow.
Figure 1.12: Thermal motion of an electron in a solid.
If an electric field Ex is applied in the x-direction, each electron experiences a net force
−qEx from the field. This force may be insufficient to alter appreciably the random path
of an individual electron; the effect when averaged over all the electrons, however, is a
net motion of the group in the x-direction. If px is the x-component of the total
momentum of the group, force of the field on the n electrons / cm3 is
dpx
− nqEx = .
dt field

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Initially, above equation seems to indicate a continuous acceleration of the electrons in

the − x -direction. This is not the case, however, because the net acceleration is just
balanced in steady state by the decelerations of the collision processes. Thus while the
steady field Ex does produce a net momentum p− x , the net rate of change of momentum
when collisions are included must be zero in the case of steady state current flow.
To find the total rate of momentum change from collisions, we must investigate the
collision probabilities more closely. If the collisions are truly random, there will be a
constant probability of collision at any time for each electron. Let us consider a group of
N 0 electrons at time t = 0 and define N ( t ) as the number of electrons that have not
undergone a collision by time t. The rate of decrease in N ( t ) at any time t is proportional
to the number left unscattered at t,
dN ( t ) 1
− = N ( t ) where t −1 is a constant proportionality.
dt t
The solution to above equation is an exponential function
N ( t ) = N0e
−t
t
and t represents the mean time between scattering events, called the
mean free time.
dt
The probability that any electron has a collision in the time interval dt is .
t
dt
Thus the differential change in p, due to collisions in time dt is dpx = − px .
t
dpx px
The rate of change of px , due to the decelerating effect of collisions is =−
dt collision t
The sum of acceleration and deceleration effects must be zero for steady state. Thus
px
− − nqEx = 0 .
t
px
The average momentum per electron is < px >= = −qt Ex where the angular brackets
n

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indicate an average over the entire group of electrons. As expected for steady state, the
above equation indicates that the electrons have on the average a constant net velocity in
px qt
the negative x-direction: vx = *
=− Ex
m n mn*
Actually, the individual electrons move in many directions by thermal motion during a
given time period, but vx tells us the net drift of an average electron in response to the
electric field. The drift speed vx is usually much smaller than the random speed due to
thermal motion vth .

The current density resulting from this net drift is just the number of electrons crossing
a unit area per unit time ( n vx ) multiplied by the charge on the electron ( −q ) :
nq 2 t
J x = −qn vx = * Ex ampere / cm 2 .
mn
Thus the current density is proportional to the electric field, as we expect from Ohm's
nq 2 t
law: J x = σ Ex where σ ≡ .
mn*
qt
The conductivity σ ( Ω − cm ) can be written σ = qnμn
−1
where μn ≡ .
mn*
The quantity μn , called the electron mobility, describes the ease with which electrons
drift in the material. Mobility is a very important quantity in characterizing
semiconductor materials and in device development.
The mobility can be expressed as the average particle drift velocity per unit electric field.
vx
Thus μn = − , and units of mobility are (cm / s) /(V / cm) = cm 2 / V - s . The minus sign
Ex
in the definition results in a positive value of mobility, since electrons drift opposite to
the field.
The current density can be written in terms of mobility as J x = qnμn Ex .
This derivation has been based on the assumption that the current is carried primarily by

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electrons. For hole conduction we change n to p , − q to + q , μn to μ p
vx
where μ p = + is the mobility for holes.
Ex
If both electrons and holes participate, then
where σ = q ( nμ n + p μ p ) .
For N-type semiconductor

σ n = e ( nn μn + pn μ p ) ≈ nn eμn since nn >> pn where nn and pn are electron and hole
concentration in N-type.
For P-type semiconductor
σ p = e ( n p μn + p p μ p ) ≈ p p eμ p since p p >> n p where n p and p p are electron and hole
concentration in P-type.
Example: The following data are given for intrinsic Germanium at 300 K .
ni = 2.4 × 1019 / m3 , μe = 0.39m 2V −1s −1 , μ p = 0.19m 2V −1s −1 . Find the conductivity of the
Germanium.
Solution:
σ = eni (μ n + μ p ) = 1.6 × 10 −19 × 2.4 × 1019 (0.39 + .19) = 2.227 ( Ωm )−1 .
Example: A sample of Si has electron and hole mobilities of 0.13 and 0.05 m 2V −1s −1
respectively at 300K. It is doped with P and Al with doping densities of 1.5 × 10 21 / m 3

and 2.5 × 10 21 / m 3 respectively. The resistivity of doped Si sample at 300K is
(a) 0.125 Ωm (b) 8.0 Ωm (c) 2.125 Ωm (d) 0.225 Ωm
Solution:
Resulting doped crystal is p-type and p p = (2.5 − 1.5) × 10 21 / m 3 = 1 × 10 21 / m 3
σ = e(n p μ n + p p μ p ) ≈ ep p μ p = 1.6 × 10 −19 × 1 × 10 21 × 0.05 = 8 Ω −1 m −1

1 1
ρ= = = 0.125 Ωm
σ 8

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1.9.2 Diffusion Current

In addition to a conduction current, the transport of charges in a semiconductor may be
accounted for a mechanism called diffusion. It is possible to have non-uniform
concentration of particles in a semiconductor. As indicated in the figure 1.13, the
concentration p of holes varies with distance x in the semiconductor, and there exist a
dp
concentration gradient, in the density of the carriers.
dx
p (0) p( x)
The existence of a gradient implies that if an imaginary • • • • • • • • • •
• • • • • •
• • • • • • • • • •
surface is drawn in the semiconductor, the density of •
•
•
•
•
•
•
•
•
•
•
• • • • •
• • • • • • • • • •
• • • • • •
the holes immediately on one side of the surface is • • • • • • • • • •
• • • • • •
• • • • • • • • • •
larger than the density on the other side. The holes are •
•
•
•
•
•
•
•
•
•
•
• • • • • Jp
• • • • • •
• • • • • • • • • •
in random motion as a result of their thermal energy. • • • • • •
• • • • • • • • • •
• • • • • •
Accordingly, holes will continue to move back and •
•
•
•
•
•
•
•
•
•
•
•
• • • •
• • • • • • • • • •
forth across this surface. We may then expect that, in a • • • • • • • • • •
• • • • • •
x=0 x
given time interval, more holes will cross the surface
Figure 1.13
Note: It should be noted that this net transport of charge is not the result of mutual
repulsion among charges of like sign, but is simply the result of a statistical phenomenon.
This diffusion is exactly analogous to that which occurs in a neutral gas if concentration
gradient exists in the gaseous container.
The diffusion hole-current density J p (ampere per square meter) is proportional to the
dp
concentration gradient, and is given by: J p = − qD p
dx
where D p (Square meters/second) is called diffusion constant. Since p decreases with
dp
increasing x , then is negative and the minus sign needed, so that J p is positive in the
dx
positive x -direction.
dn
Similarly, J n = qDn
dx

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1.9.3 Einstein Relationship

Since both diffusion and mobility are statistical thermodynamic phenomena, D and μ are
not independent. The relationship between them is given by
Dp Dn
= = VT where VT is the ‘Volt-equivalent of temperature’.
μp μn
kT T
VT = = V
q 11, 600
k → Boltzmann constant in electron volts per degree Kelvin
At room temperature T = 3000 K , VT = 0.026 V ⇒ μ = 39 D
1.9.4 Total Current in a Semiconductor

It is possible for both a potential gradient and a concentration gradient to exist
simultaneously within a semiconductor. In such a situation, the total hole current is the
dp
sum of the drift current and the diffusion current, J p = qμ p pE − qD p
dx
dn
Similarly the net electron current is: J n = qμ n nE + qDn
dx
1.10 Effects of Temperature and Doping on Mobility
The two basic types of scattering mechanisms that influence electron and hole mobility
are lattice scattering and impurity scattering. In lattice scattering a carrier moving
through the crystal is scattered by a vibration of the lattice, resulting from the temperature
(Collective vibrations of atoms in the crystal are called phonons. Thus lattice scattering is
also known as phonon scattering). The frequency of such scattering events increases as
the temperature increases, since the thermal agitation of the lattice becomes greater.
Therefore, we should expect the mobility to decrease as the sample is heated. On the
other hand, scattering from crystal defects such as ionized impurities becomes the
dominant mechanism at low temperatures. Since the atoms of the cooler lattice are less
agitated, lattice scattering is less important; however, the thermal motion of the carriers is
also slower.

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T 3/ 2 T −3 / 2
μ (cm 2 , V - s )
(log scale )
Impurity scattering Lattice scattering
T (K )
(log scale )
Figure 1.14: Approximate temperature dependence of mobility with both lattice and
impurity scattering.
Since a slowly moving carrier is likely to be scattered more strongly by an interaction
with a charged ion than is a carrier with greater momentum, impurity scattering events
cause a decrease in mobility with decreasing temperature. The approximate temperature
dependencies are T −3/ 2 for lattice scattering and T 3/ 2 for impurity scattering.

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1. 11 The Potential Variation within a Graded Semiconductor

Junction
V1 V2 p - type n - type
p1 p 2• NA • • ND
•
x1 x2
V0
x1 x2
(a ) (b )
Figure 1.15 (a): A graded semiconductor: p(x) is not constant
(b): One portion is doped with (uniformly) acceptor ions and the other section is doped
uniformly with donor ions so that a metallurgical junction is formed.
Consider a semiconductor where the hole
concentration p is a function of x; that is, the doping is non-uniform or graded. Assume a
steady-state situation and zero excitation; that is, no carriers are injected into the
specimen from any external source. With no excitation there can be no steady movement
of charge in the bar, although the carriers possess random motion due to thermal
agitation. Hence the total hole current must be zero (also, the total electron current must
be zero). Since p is not constant, we expect a non-zero hole diffusion current. In order for
the total hole current to vanish there must exist a hole drift current which is equal and
opposite to the diffusion current. However, conduction current requires an electric field
and hence we conclude that, as a result of the non-uniform doping, an electric field is
generated within the semiconductor. We shall now find this field and the corresponding
potential variation throughout the bar.
dp V dp
Since J p = q μ p pE − qD p ⇒E= T ∵ J p = 0 and then use D p = μ pVT
dx p dx
If the doping concentration p ( x ) is known, this equation allows the built in field E ( x ) to
be calculated.
dV dp
∵E = − ⇒ dV = −VT .
dx p

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If this equation is integrated between x1 , where the concentration is p1 and the potential
p1
is V1 and x 2 where p = p 2 and V = V2 , the result is: V21 ≡ V2 − V1 = VT ln
p2
Note: The potential difference between two points depends only upon the concentration
at these points and is independent of their separation ( x2 − x1 ) .
V2 1 / VT
Above equation can be put in the form p1 = p 2 e
This is the Boltzmann relationship of kinetic gas theory.
Starting with J n = 0 and proceeding as above, the Boltzmann equation for electrons is
obtained as n1 = n2 e −V21 / VT . Now n1 p1 = n 2 p 2 .

This equation states that the product np is a constant independent of x , and hence the
amount of doping, under thermal equilibrium.
For an intrinsic semiconductor n = p = ni and hence np = ni2 .
1.11.1 An Open-Circuited Step-graded Junction

Consider the special case indicated in figure 1.15 (b). The left half of the bar is p-type
with a constant concentration N A , whereas the right-half is n-type with a uniform
density N D . The dashed plane is a metallurgical ( p − n ) junction separating the two
sections with different concentrations. This type of doping where the density changes
abruptly from p to n type is called step-grading. The step graded junction is located at the
plane where the concentration is zero. The above theory indicates that there is built-in
potential between these two sections (called the contact difference of potential Vo .)
p po
Thus Vo = V21 = VT ln
p no
Because p1 = p po = thermal-equilibrium hole concentration in p-side
p 2 = p no = thermal equilibrium hole concentration in n-side
ni2 N AND
since p po = N A and pno = ⇒ Vo = VT ln
ND ni2

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Summary
1. In a semiconductor two types of mobile charge carriers are available. The bipolar
nature of a semiconductor is to be contrasted with the unipolar property of a metal, which
possesses only free electrons.
2. A semiconductor may be fabricated with donor (acceptor) impurities. So it contains
mobile charges which are primarily electrons (holes).
3. The intrinsic carrier concentration is a function of temperature. At room temperature,
essentially all donors or acceptors are ionized.
4. Current is due to two distinct phenomenons:
(a) Carriers drift in an electric field (this conduction current is also available in metals).
(b) Carriers diffuse if a concentration gradient exists (a phenomenon, which does not take
place in metals).
5. Carriers are continuously being generated (due to thermal creation of hole-electron
pairs) and are simultaneously disappearing (due to recombination).
6. The fundamental law governing the flow of charges is called the continuity equation. It
is formulated by considering that charges can neither be created nor destroyed if
generation, recombination, drift and diffusion are all taken into account.
7. If the minority carriers are injected into a region containing majority carriers, then
usually the injected minority concentration is very small compared with the density of the
majority carries. For this low-level injection condition the minority current is
predominantly due to diffusion; in other words, the minority drift current may be
neglected.
8. The total majority-carrier flow is the sum of a drift and diffusion current. The majority
conduction current results from a small electric field internally created within the
semiconductor because of the injected carriers.
9. The minority-carrier concentration injected into one end of a semiconductor bar
decreases exponentially with distance into the specimen (as a result of diffusion and
recombination).
10. Across an open-circuited p-n junction there exists a contact difference of potential.

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Multiple Choice Questions (MCQ)
Q1. Consider the following statements: Electrical conductivity of a metal has negative
temperature coefficient since
1. Electron concentration increases with temperature
2. Electron mobility decreases with temperature
3. Electron lattice scattering increases with temperature.
Which of the following statements given above correct?
(a) 1, 2, 3 (b) only 1 and 2 (c) only 2 and 3 (d) only 1 and 3
Q2. A piece of copper and a piece of germanium are cooled from room temperature to
100 K . Then which one of the following is correct?
(a) Resistance of each will increase
(b) Resistance of each will decrease
(c) Resistance of copper will increase while that of germanium will decrease.
(d) Resistance of copper will decrease while that of germanium will increase.
Q3. The probability of electrons to be found in the conduction band of an intrinsic

semiconductor at a finite temperature
(a) Increases exponentially with increasing band gap.
(b) Decreases exponentially with increasing band gap.
(c) Decreases with increasing temperature.
(d) is independent of the temperature and the band gap.
Q4. Pure silicon at 300 K has equal electron and hole concentration of 2 × 1016 m −3 . It
is doped by by indium to the extent one part in 107 silicon atom. If the density of silicon
is 4 ×1029 m−3 , then the electron concentration in the doped silicon is
(a) 105 m −3 (b) 107 m −3 (c) 109 m−3 (d) 1010 m−3

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Q5. Two pure specimen of a semiconductor material are taken. One is doped with
1018 cm−3 numbers of donors and the other is doped with 1016 cm −3 numbers of
acceptors. The minority carrier density in the first specimen is 107 cm −3 . What is the
minority carrier density in the other specimen?
(a) 1016 cm −3 (b) 1027 cm −3 (c) 1018 cm−3 (d) 109 cm−3
Q6. The donor concentration in a sample of n -type silicon is increased by a factor

of 100. The shift in the position of the Fermi level at 300 K , assuming the sample to non
degenerate is ( k BT = 25 meV at 300 K )
(a) 105 meV (b) 110 meV (c) 115 meV (d) 120 meV
Q7. A sample of Si has electron and hole mobility’s of 0.13 and 0.05 m 2V −1s −1
respectively at 300 K . It is doped with P and Al with doping densities of 1.5 × 10 21 / m 3
and 2.5 × 10 21 / m 3 respectively. The conductivity of doped Si sample at 300 K is
(a) 8 Ω −1 m −1 (b) 32 Ω −1 m −1 (c) 20.8 Ω −1 m −1 (d) 83.2 Ω −1 m −1
and 1.5 × 10 21 / m 3 respectively. The conductivity of doped Si sample at 300 K is
(a) 8 Ω −1 m −1 (b) 32 Ω −1 m −1 (c) 20.8 Ω −1 m −1 (d) 83.2 Ω −1 m −1
Q9. Mobility of electrons as well as holes for intrinsic germanium is given by
3900 cm2 / V − sec and 1900 cm 2 / V − sec with intrinsic concentration 2.5 × 1013 cm −3 .
Then the intrinsic resistivity of the material is
(a) 43 Ωcm (b) 64 Ωcm (c) 86 Ωcm (d) 131 Ωcm

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Q10. Consider an extrinsic semiconductor with intrinsic concentration of ni . If μ p and
μn are mobility of holes and electron then the electron concentration at which
semiconductor have minimum conductivity and σ min are
(a) ni μ p μn , ni e μ p μn (b) ni μ p / μn , 2ni e μ p μn
(c) ni μn / μ p , ni e μn / μ p (d) ni / μn μ p , 2ni e / μn μ p
Q11. The Fermi-level in an n-type and p-type semiconductor material is expressed as

(where N D , N A are donor and acceptor ion concentration and N C , NV are effective
density of states in conduction and valance band)
⎛N ⎞ ⎛ NA ⎞ ⎛N ⎞ ⎛N ⎞
(a) EC + kT ln ⎜ D ⎟ , EV + kT ln ⎜ ⎟ (b) EC − kT ln ⎜ D ⎟ , EV − kT ln ⎜ A ⎟
⎝ NC ⎠ ⎝ NV ⎠ ⎝ NC ⎠ ⎝ NV ⎠
⎛N ⎞ ⎛N ⎞ ⎛N ⎞ ⎛N ⎞
(c) EC + kT ln ⎜ D ⎟ , EV − kT ln ⎜ A ⎟ (d) EC − kT ln ⎜ D ⎟ , EV + kT ln ⎜ A ⎟
⎝ NC ⎠ ⎝ NV ⎠ ⎝ NC ⎠ ⎝ NV ⎠
Q12. In an n-type semiconductor the minority hole concentration is pn and intrinsic
carrier concentration is ni . If the effective density of state in conduction band is nc at
temperature T 0 K . Then relative position of the Fermi-level with respect to level ( Ec ) is
nc ni2 ⋅ nc
(a) KT ln (b) KT ln
ni2 pn pn
p ⋅n ni2
(c) KT ln n c (d) KT ln
ni2 pn ⋅ nc
( )
Q13. A Si sample ni = 1.5 × 1010 cm −3 is doped with 1017 As atoms / cm3 . Then
relative position of Fermi-level ( EF ) with respect to intrinsic level ( Ei ) is
(a) 0.12 eV (b) 0.14 eV (c) 0.16 eV (d) 0.41 eV

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Q14. In an n-type semiconductor, the Fermi level is 0.24 eV below the conduction
band at room temperature of 300 K . If the temperature is increased to 350 K , then
the new position of the Fermi-level is (Assume effective density of states to be
independent of temperature):
(a) 0.28 eV (b) 0.38 eV (c) 0.48 eV (d) 0.58 eV
Q15. A p -type semiconductor (acceptor ion concentration is N A ) is doped with donor
ion (concentration is N D ) and N D > N A . If the intrinsic concentration is ni , then the

concentration of minority carrier in the doped specimen will be:
ni2 ni2 ni2 ni2

(a) (b) (c) (d)
ND NA ( ND − N A ) ( N A − ND )
Numerical Answer Type Questions (NAT)
Q16. Pure silicon at 300 K has equal electron and hole concentration of 1.5 × 1016 m −3 .
Doping by indium increases hole concentration to 4.5 × 1022 m −3 . Then the electron
concentration in the doped silicon is……….. ×109 m −3
(a) 9 × 105 m −3 (b) 5 ×109 m−3 (c) 9 × 10−5 m −3 (d) 5 ×10−9 m −3
Q17. A pure Si sample at 300 K with intrinsic carrier concentration of 1.5 × 1016 / m 3 is
doped with phosphorous. The equilibrium hole concentration and electron mobility is
2.25 × 10 9 / m 3 and 1350 cm2 / Vs respectively. Then the Position of Fermi-level relative
to the intrinsic level at 300 K is .........eV
and 1.5 × 10 21 / m 3 respectively. The resistivity of doped Si sample at 300 K

is ...........Ωm

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Q19. The following data are given for intrinsic Germanium at 300 K . ni = 2.4 ×1019 / m3 ,
μe = 0.39m2V −1s −1 , μ p = 0.19m 2V −1s −1 . The resistivity of the Germanium will turn out to
be ...........Ωm
Q20. A semiconductor has following parameters μn = 7500 cm 2 / Vs , μ p = 300 cm 2 / Vs
and ni = 3.6 × 1012 cm −3 . When the conductivity is minimum, the hole concentration is
....... ×1013 cm −3
Multiple Select Type Questions (MSQ)
Q21. Which of the following are true regarding Fermi-Dirac distribution function
1
f (E) = ( E − EF ) / kT
1+ e
(a) An energy state at the Fermi level has a probability of 1 / 2 of being occupied by an
electron.
(b) At 0 K , every available energy state up to EF is filled with electrons, and all states
above EF are empty.
(c) At temperatures higher than 0 K , there is some probability f ( E ) that states above EF
are filled and there is a corresponding probability [1 − f ( E ) ] that states below EF are
empty.
(d) The Fermi function is unsymmetrical about EF for all temperatures.
Q22. Which of the following statement are true regarding semiconductors?

(a) An n -type semiconductor behaves as an intrinsic semiconductor at very high
temperature.
(b) The breaking of the covalent bonds becomes a significant phenomenon at high
temperatures.
(c) The carriers mobility increases with increase of temperature.
(d) The carriers mobility decreases with increase of temperature.

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Q23. Which one of the following are true?

(a) Metals have positive temperature coefficient of resistance.
(b) Semiconductors have negative temperature coefficient of resistance.
(c) Conductivity of metals decreases with increase in temperature.
(d) Conductivity of semiconductor decreases with increase in temperature.
Q24. Which one of the following are not true?

(a) The diffusion constants Dn and D p for electrons and holes respectively are related
D p Dn kT
to their mobility by Einstein equation μ = μ = e
p n
(b) The expression n. p = ni2 is valid for semiconductors at all temperature.
3 ⎛ Eg ⎞
(c) ni (T ) = AT 2
exp ⎜ − ⎟ , correctly describe the temperature (T) variation of the
⎝ 2kT ⎠
intrinsic carrier density of a semiconductor
(d) Gallium Arsenide ( GaAs ) is an indirect band gap semiconductor with
E g = 1.43 eV at room temperature
Q25. Which of the following are true?

(a) Si and Ge are indirect band gap semiconductor.
(b) At 3000 K the band gap energies of Si and Ge are1.1eV and 0.72 eV .
(b) At 00 K the band gap energies of Si and Ge are 1.1eV and 0.72 eV .
(d) At 3000 K mobility ( μ ) and diffusion constant ( D ) is related by μ = 39 D .

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Solution
MCQ
Ans.1: (c)
Ans.2: (d)
Ans.3: (b)
Ans.4: (d)
4 × 1029 m −3
Acceptor ion concentration N A ≈ p = = 4 × 1022 m
7
10
According to Law of Mass Action, n. p = ni2
n. p = n′. p′ ⇒ n′ =
n. p
=
( ) (
2 ×1016 × 2 ×1016 )
= 1010 m −3
p′ (
4 ×10 22
)
Ans.5: (d)
According to law of mass action,
n . p 1018 ×107
n1. p1 = n2 . p2 ⇒ n2 = 1 1 = = 109 cm−3
16
p2 10
Ans.6: (c)
⎛N ⎞ ⎛ Nc ⎞ ⎛ Nc ⎞
EC − EF = kT ln ⎜ c ⎟ and EC − EF′ = kT ln ⎜ ⎟ = kT ln ⎜ ⎟ − kT ln (100 )
⎝ Nd ⎠ ⎝ 100 N d ⎠ ⎝ Nd ⎠
Thus shift is ΔE = kT ln (100 ) = 25ln (100 ) meV = 115.15 meV
Ans.7: (a)
Resulting doped crystal is p-type and p p = (2.5 − 1.5) × 10 21 / m 3 = 1 × 10 21 / m 3
σ = e(n p μ n + p p μ p ) ≈ ep p μ p = 1.6 × 10 −19 × 1 × 10 21 × 0.05 = 8 Ω −1 m −1

Ans.8: (c)
Resulting doped crystal is n-type and nn = (2.5 − 1.5) × 10 21 / m 3 = 1 × 10 21 / m 3
σ = e(nn μ n + p n μ p ) ≈ enn μ n = 1.6 × 10 −19 × 1 × 10 21 × 0.13 = 20.8 Ω −1 m −1

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Ans.9: (a)
1 1 1
ρi = = = = 43 Ωcm
σi ni e ( μe + μh ) 2.5 x 10 × 1.6 x 10-19 × ( 5800 )
13
Ans.10: (b)
⎛ ni2 ⎞
(
Conductivity σ = e nμn + p μ p = e ⎜ nμn +
⎜ n
)
μp ⎟
⎟
⎝ ⎠
dσ
For minimum conductivity, = 0 ⇒ n = ni μ p / μn
dn
Thus σ min = 2ni e μ p μn
Ans.11: (c)
Ans.12: (c)
−( Ec − EF ) / kT ⎛N ⎞
nn = N c e ⇒ Ec − EF = kT ln ⎜ c ⎟ and nn . pn = ni2
⎝ nn ⎠
Ans.13: (d)
ni2 2.25 ×1020 n

pn = = = 2.25 × 103 cm−3 ⇒ EF − Ei = kT ln n = 0.407 eV
17
nn 10 ni
Ans.14: (a)
NC N N
EC − EF = kT ln ⇒ 0.24 = 300k ln C and EC − EF' = 350k ln C
ND ND ND
⇒ EC − EF' = 0.28 eV
Ans.15: (c)

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NAT
Ans.16: 5
According to Law of Mass Action, n. p = ni2
n. p = n′. p′ ⇒ n′ = =
( 16
) (
n. p 1.5 ×10 × 1.5 × 10
16
)
= 5 × 109 m −3
p′ (
4.5 × 10 22
)
Ans.17: 0.41
Equilibrium electron concentration is
ni2 (1.5 × 1016 )
2
np = n 2
( Law of mass) ⇒ n = = = 1.00 × 10 23 m −3
2.25 × 10 9
i
p
⎛n⎞ ⎛ 10 23 ⎞
EF − Ei = k BT ln⎜⎜ ⎟⎟ = 8.67 × 10 −5 × 300 × ln⎜⎜ ⎟ = 0.406 eV
16 ⎟
⎝ ni ⎠ ⎝ 1.5 × 10 ⎠
Ans.18: 0.05
Resulting doped crystal is n-type and n n = (2.5 − 1.5) × 10 21 / m 3 = 1 × 10 21 / m 3
σ = e(nn μ n + p n μ p ) ≈ enn μ n = 1.6 × 10 −19 × 1 × 10 21 × 0.13 = 20.8 Ω −1 m −1

1 1
ρ= = = 0.048 Ωm
σ 20.8
Ans.19: 0.45
σ = eni (μ n + μ p ) = 1.6 × 10 −19 × 2.4 × 1019 (0.39 + .19) = 2.227 ( Ωm )−1
1 1
ρ= = = 0.449 Ωm
σ 2.227
Ans.20: 2
p = ni μn / μ p = 3.6 × 1012 7500 / 300 = 18 × 1012 = 2 × 1013 cm −3
MSQ
Ans.21: (a), (b) and (c)
Ans.22: (a), (b) and (d)
Ans.23: (a), (b) and (c)
Ans.24: (a), (b) and (c)
Ans.25: (a), (c) and (d)

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2. P-N Junction Diode

2.1 Semiconductor Diode
In an n-type material the electron is called the majority carrier and the hole the minority
carrier. In an p-type material the holes are the majority carrier and the electrons are
minority carrier.
If the two materials are “joined” the electrons and holes in the region of the junction will
combine resulting in a lack of carriers in the region near the junction. This region of
uncovered positive and negative ions is called the depletion region due to the depletion of
mobile carriers in this region.
Since the diode is two terminal devices, the application of a voltage across its terminals
leaves three possibilities: no bias (VD = 0V ) , forward bias (VD > 0V ) and reverse
bias (VD < 0 V ) . Each is a condition that will result in a response that one must clearly
understand if the device is to be applied effectively.

2.1.1 No Applied Bias (VD = 0V ) Depletion region
−+
−
− +− −+ − − + + +−+ +− +−
− − + +
−+ −+ −+ − − + + +− + −+ +−
−+ − −+ −+ − − + + +− + +− + −+
− − − + +
−+ −+ −+ − − + + +− + −+ +−
−+ − +− −+ − − + + +− +− + −+
−+ − −+ −+
−
−
−
−
+
+
+
+ +− +− +−
p n
I D = 0 mA I D = 0 mA
+ VD = 0V −
(no bias )
Figure 2.1: p-n junction with no applied bias.
Under no bias condition, any minority carriers (holes) in the n-type material that find
themselves within the depletion region will pass directly into the p-type material. The
closer the minority carrier is to the junction, the greater the attraction for the layer of
negative ions and the less the opposition of the positive ions in the depletion region of the
n-type material. For further discussions we shall assume that all the minority carriers in

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the n-type material that find themselves in the depletion region due to their random
motion will pass directly into the p-type material. Similar discussion can be applied to the
minority carriers (electrons) of the p-type material.
The majority carriers (electrons) of the n-type material must overcome the attractive
forces of the layer of positive ions in the n-type material and the shield of negative ions in
the p-type material in order to migrate into the area beyond the depletion region of the
p-type material. Again the same type of discussion can be applied to the majority carriers
(holes) of the p-type material.
In the absence of an applied bias voltage, the net flow of charge in any one direction for
a semiconductor diode is zero.
2.1.2 Reverse Bias Condition (VD < 0 V )
I s Minority-carrier flow
I majority = 0
+
− − −+ −+ − − − + + + +− +−+−
+ − − − − + + + −+ −
− − −+ −+ − − − + + + + +++−
− − − + + + −+ − +
+
− −+ −+ − − − − + + + + + +
−
p n
Depletion region
Is Is
− +
VD
Figure 2.2: Reversed biased p-n junction.
If an external potential of V volts is applied across the p-n junction such that the positive
terminal is connected to the n-type material and the negative terminal is connected to the
p-type material, the number of uncovered positive ions in the depletion region of the
n-type material will increase due to the large number of “free” electrons drawn to the
positive potential of the applied voltage.

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For similar reasons, the number of uncovered negative ions will increase in the p-type
material. The net effect, therefore, is a widening of the depletion region. This widening of
the depletion region will establish too great a barrier for the majority carriers to
overcome, effectively reducing the majority carrier flow to zero.
The number of minority carriers, however, that find themselves entering the depletion
region will not change, resulting in minority-carrier flow. The current that exists under
reverse bias conditions is called the reverse saturation current and is represented by
I s or I 0 .
2.1.3 Forward Bias Condition (VD > 0V )

Is ⎫
I majority ⎬⎭ I D = I majority − I s
−+− +− + − + + − + − + −
− − − + + +
−+− + − + − + + −+ + − + − −
+
−+− +− − + −− ++ + − + − + −
p n
Depletion region
ID ID
+ −
VD
Figure 2.3: Forward biased p-n junction.
A forward-bias or “on” condition is established by applying the positive potential to the

p-type material and the negative potential to the n-type material as shown in figure 2.3.
Thus a semiconductor diode is forward-biased when the association p-type positive and
n-type negative has been established.
The application of a forward-bias potential VD will “pressure” electrons in the n-type
material and holes in the p-type material to recombine with the ions near the boundary
and reduce the width of the depletion region. The resulting minority-carrier flow of
electrons from the p-type material to the n-type material (and of holes from the n-type
material to the p-type material) has not changed in magnitude (since the conduction level

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is controlled primarily by the limited number of impurities in the material), but the
reduction in the width of the depletion region has resulted in a heavy majority flow across
the junction. An electron in the n-type material now “sees” a reduced barrier at the
junction due to the reduced depletion region and a strong attraction for the positive
potential applied to the p-type material. As the applied bias increases in magnitude the
depletion region will continue to decrease in width until a flood of electrons can pass
through the junction, resulting in an exponential rise in current as shown in the forward-
bias region of the characteristics.
2.1.4 Ideal Diode
Before examining the construction and characteristics of an actual device, we first
consider the ideal device, to provide a basis for comparison. The ideal diode is a two-
terminal device having the symbol and characteristics shown in figure 2.4(a) and 2.4(b),
respectively.
Ideally, a diode will conduct current in the direction defined by the arrow in the symbol
and act like an open circuit to any attempt to establish current in the opposite direction. In
essence: The characteristics of an ideal diode are those of a switch that can conduct
current in only one direction. VD
+ −
ID
(a)
+ ID
VD
+ −
ID
− +
0 VD
− VD
+
ID
−
(b)
Figure 2.4: Ideal Diode: (a) Symbol; (b) Characteristics.

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The ideal diode, therefore, is a short circuit in the region of conduction and is an open
circuit in the region of non conduction.
Short circuit
VD
+ −
• •
ID
I D (limited by circuit)
(a)
0 VD
Open circuit
−
VD
+
• •
ID = 0
(b)
Figure 2.5: (a) Conduction and (b) non-conduction states of the ideal diode as determined by
the applied bias.
2.1.5 Diode Characteristics ( Vγ = 0.7V for Si and Vγ = 0.3V for Ge)
I D (mΑ )
Ge Si
VD (V )
Si Vγ = 0.3V Vγ = 0.7V
Ge
Figure 2.6: Comparison of Si and Ge semiconductor diodes.

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It is clear from the characteristics of figure 2.6 that to forward bias the diode minimum
voltage of Vγ is required. This voltage Vγ is called cut-in voltage of the diode. The closer
the upward swing is to the vertical axis, the more “ideal” the device. However, the other
characteristics of silicon as compared to germanium still make it the choice in the
majority of commercially available units.
2.1.6 Diode Equation
⎛ VD ηVT ⎞
ID = Is ⎜ e − 1⎟ where I s = reverse saturation current,
⎝ ⎠
kT
VT = is volt equivalent of temperature and η = 1 for Ge and η = 2 for Si devices.
e
Note: The reverse saturation current in a germanium diode is normally larger by a factor
of about 1000 than the reverse saturation current in a silicon diode of comparable ratings.
I s is in the range of μA for a Ge diode and nA for a silicon diode at room temperature.
2.1.7 Breakdown Diodes

Diodes which are designed with adequate power-dissipation capabilities to operate in the
breakdown region may be employed as voltage-reference or constant-voltage devices.
Such diodes are known as avalanche, breakdown or Zener diodes. They are used
characteristically in the manner indicated in the figure 2.7.
I
R
•
+
IZ
VZ
+ RL VZ V
V − I ZK
•
− I ZM
(a ) (b )
Figure 2.7: (a) Zener diode as voltage regulator (b) Zener charachteristics.

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The source V and resistor R are selected so that initially, the diode is operating in the
breakdown region. Here the diode voltage, which is also the voltage across the load RL, is
VZ, and the diode current is IZ. The diode will now regulate the load voltage against
variations in load current and against variations in supply V, because in the break-down
region only small changes in diode voltage produce large changes in diode current.
Moreover, as load current or supply voltage changes, the diode current will accommodate
itself to these changes to maintain a nearly constant load voltage. The diode will continue
to regulate until the circuit operation requires the diode current to fall to IZK, in the
neighborhood of the knee of the diode volt-ampere curve. The upper limit on diode
current is determined by the power dissipation rating of the diode.
2.1.8 The Temperature Dependence of the V-I Characteristics

The volt-ampere relationship contains the temperature implicitly in the two symbols VT
and I s . If the temperature is increased at a fixed voltage, the current increases. However if
we now reduce V, then I may be brought back to its previous value. It is found that for
dV
either silicon or germanium (at room temperature) ≈ −2.5 mV 0 in order to
dT C
dV
maintain a constant value of I. It should be noted that decreases with increasing T.
dT

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2.2 Diode Resistances

2.2.1 DC or Static Resistance
The application of a dc voltage to a circuit containing a semiconductor diode will result
in an operating point on the characteristic curve that will not change with time. The
resistance of the diode at the operating point can be found simply by finding the
corresponding levels of VD and ID as shown in figure 2.8 and applying the following
VD
equation: RD =
ID
The dc resistance levels at the knee and below will be greater than the resistance levels
obtained for the vertical rise section of the characteristics. The resistance levels in the
reverse-bias region will naturally be quite high. Since ohmmeters typically employ a
relatively constant current source, the resistance determined will be at a preset current
level (typically, a few milliamperes).
I D (mA )
ID •
VD
0 V D (V )
Figure 2.8: Determining the dc resistance of a diode at a particular operating point.

2.2.2 AC or Dynamic Resistance
The dc resistance of a diode is independent of the shape of the characteristic in the region
surrounding the point of interest. If a sinusoidal rather than dc input is applied, the
situation will change completely. The varying input will move the instantaneous
operating point up and down a region of the characteristics and thus defines a specific
change in current and voltage as shown in figure 2.9(a). With no applied varying signal,
the point of operation would be the Q-point appearing on figure determined by the
applied dc levels. The designation Q-point is derived from the word quiescent which
means “still or unvarying.”

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Diode characteristic
•
tangnet line
ΔI d • Q - point
(dc operation )
Q - point • ΔI d
•
ΔV d
ΔVd
Figure 2.9: (a) Defining ac Resistance. (b) Determining the ac Resistance at a Q-point.
A straight line drawn tangent to the curve through the Q-point as shown in figure 2.9(b)
will define a particular change in voltage and current that can be used to determine the ac
or dynamic resistance for this region of the diode characteristics. An effort should be
made to keep the change in voltage and current as small as possible and equidistant to
ΔVd
either side of the Q-point. In equation form rd = where ∆ signifies a finite change
ΔI d
in the quantity.
For small-signal operation the dynamic resistance r is an important parameter and is
dV
defined as the reciprocal of the slope of the volt ampere characteristic r ≡ .
dI
The dynamic resistance is not a constant, but depends upon the operating voltage.
1
For a semiconductor diode, the dynamic conductance g ≡
r
dI I s eV /ηVT I + I s ηV ⎛ V ⎞ V
g≡ = = ⇒ r ≈ T ∵ I = I s ⎜ e ηVT − 1⎟ and >> 1 , I >> I S .
dV ηVT ηVT I ⎝ ⎠ ηVT
26
At room temperature, for η = 1, r = , where I is in mA and r is in Ω. For a forward
I
current of 26 mA the dynamic resistance is 1Ω.

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2.3 Diode Capacitances

2.3.1 Space-Charge or Transition Capacitance
A reverse bias causes majority carriers to move away from the junction, thereby
uncovering more immobile charges. Hence the thickness of the space charge layer at the
junction increases with reverse voltage. The increased in uncovered charge with applied
voltage may be considered a capacitive effect. We may define an incremental capacitance
dQ
CT by: CT = where dQ is the increase in charge caused by a change dV in voltage.
dV
It follows from this definition that a change in voltage dV in a time dt will result in a
dQ dV
current i = given by i = CT where CT is not a constant, but depends upon the
dt dt
magnitude of the reverse voltage.
2.3.2 Diffusion Capacitance
For a forward bias a capacitance which is much larger than the transition capacitance lies
in the injected charge stored near the junction outside the transition region. It is
convenient to introduce an incremental capacitance, defined as the rate of change of
injected charge with voltage, called the diffusion or storage, capacitance CD.
Charge control description of a diode
If the bias is in the forward direction, the potential barrier at the junction is lowered and
holes from the p-side enter the n- side. Similarly electrons from the n-side move into the
p-side. This process of minority-carrier injection has been discussed earlier. The excess
hole density falls off exponentially with distance.
Assume that one side of the diode, say the p material, is so heavily doped in comparison
with the n side that the current I is carried across the junction entirely by holes moving
from the p to the n side or I = I pn ( 0 ) . The excess minority charge Q will then exist only
on the n side.
Q
Now I = , where τ = τ p = mean life for holes.
τ

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The above equation states that the diode current (which consists of holes crossing the
junction from the p to the n side) is proportional to the stored charge Q of excess minority
carriers. The factor of proportionality is the reciprocal of the decay time constant (the
mean lifetimeτ) of the minority carriers. Thus in the steady state, the current I supplies
minority carriers at the rate at which these carriers are disappearing because of the
process of recombination.
Static Derivation of CD
Q dQ dI τ
Since, I = and CD = =τ =τ g =
τ dV dV r
dI 1
where g = is the diode incremental conductance and r = is the diode incremental
dV g
resistance.
Thus τI .
CD =
ηVT
We see that the diffusion capacitance is proportional to the current I. In the above
derivation we have assumed that the diode current I is due to holes only. If this
assumption is not satisfied then above equation gives the diffusion capacitance CDP due
holes only and a similar expression can be obtained for the diffusion capacitance CDn due
to electrons. The total diffusion capacitance can then be obtained as the sum of CDP
and CDn .
Note: For a reverse bias, g is very small and CD may be neglected compared with CT.
For a forward current, on the other hand, CD is usually much larger than CT.
Despite the large value of CD, the time constant rCD may not be excessive because the
1
dynamic forward resistance r = is small. Thus rCD = τ . Hence, the diode time constant
g
equals the mean lifetime of minority carriers, which lies in the range of nanoseconds (ns)
to hundreds of microseconds(μs).

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2.4 Load Line Analysis

The applied load will normally have an important impact on the point or region of
operation of a device. If the analysis is performed in a graphical manner, a line can be
drawn on the characteristics of the device that represents the applied load. The
intersection of the load line with the characteristics will determine the point of operation
of the system. Such an analysis is, for obvious reasons, called load-line analysis.
Consider the network of figure 2.10(a) employing a diode having the characteristics of
figure 2.10(b). Note in figure 2.10(a) that the “pressure” established by the battery is to
establish a current through the series circuit in the clockwise direction. The fact that this
current and the defined direction of conduction of the diode are a “match” reveals that the
diode is in the “on” state and conduction has been established. The resulting polarity
across the diode will be as shown in figure 2.10(a) and the first quadrant (VD and ID
positive) of figure 2.10 (b) will be the region of interest – the forward-bias region.
ID
I D ( mA )
+ −
VD
+ +
E R VR
− −
VD (V )
0
Figure 2.10: (a) Series diode configuration circuit; (b) Characteristics.
Applying Kirchhoff’s voltage law to the series circuit of figure 2.10 (a) will result in
− E + VD + VR = 0 ⇒ E = VD + VR
⇒ E = VD + I D R
The two variables of above equation (VD and ID) are the same as the diode axis variables
of figure 2.10(a). This similarity permits a plotting of the equation on the same
characteristics of figure 2.10 (b).

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The intersections of the load line on the characteristics can easily be determined if one
simply employs the fact that anywhere on the horizontal axis ID = 0A and anywhere on
the vertical axis VD = 0 V.
ID
E Characteri stics (device)

•
R
• Q − point
I DQ Load line (network )
•
0 VDQ E VD
Figure 2.11: Drawing the load line and finding the point of operation.
If we set VD = 0 V in equation E = VD + I D R and solve for I D , we have the magnitude of
E
I D on the vertical axis. Thus E = VD + I D R = 0 V + I D R and I D = .
R V D = 0V
If we set I D = 0 A in equation E = VD + I D R and solve for VD , we have the magnitude of
VD on the horizontal axis. Thus E = VD + ( 0 A ) R and V D = E I .

D =0 A
A straight line drawn between the two points will define the load line as depicted in
figure 2.11. Change the level of R (the load) and the intersection on the vertical axis will
change. The result will be a change in the slope of the load line and a different point of
intersection between the load line and the device characteristics.
We now have a load line defined by the network and a characteristics curve defined by
the device. The point of intersection between the two is the point of operation for this
circuit. By simply drawing a line down to the horizontal axis the diode voltage VDQ can be
determined, whereas a horizontal line from the point of intersection to the vertical axis
will provide the level of I DQ . The current ID is actually the current through the entire

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series configuration of figure 2.10(a). The point of operation is usually called the
quiescent point (abbreviated “Q-point”) to reflect its “still, unmoving” qualities as
defined by a dc network.
The solution obtained at the intersection of the two curves is the same that would be
obtained by a simultaneous mathematical solution of equations E = VD + I D R
( )
and I D = I s eVD / ηVT − 1 .
2.5 Series Diode Configurations with DC Inputs

In this section the approximate model is utilized to investigate a number of series diode
configurations with dc inputs. The procedure described can, in fact, be applied to
networks with any number of diodes in a variety of configurations.
For each configuration the state of each diode must first be determined. Which diodes are
“on” and which are “off”? Once determined, the appropriate equivalent can be substituted
and the remaining parameters of the network determined.
In general, a diode is in the “on” state if the current established by the applied sources is
such that its direction matches that of the arrow in the diode symbol, and VD ≥ 0.7 V for
silicon and VD ≥ 0.3 V for germanium.
For each configuration, mentally replace the diodes with resistive elements and note the
resulting direction as established by the applied voltages (“pressure”). If the resulting
direction is a “match” with the arrow in the diode symbol, conduction above is, of course,
contingent on the supply having a voltage greater than the “turn-on” voltage ( Vγ ) of each
diode.
If a diode is in the “on” state, one can either place a 0.7 V drop across the element, or the
network can be redrawn with the Vγ equivalent circuit. In time the preference will
probably simply be to include the 0.7 V drop across each “on” diode and draw a line
through each diode in the “off” or open state. Initially, however, the substitution method
will be utilized to ensure that the proper voltage and current levels are determined.

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The series circuit of figure 2.12(a) will be used to demonstrate the approach described in
the paragraphs above. The state of the diode is first determined by mentally replacing the
diode with a resistive element as shown in figure 2.12(b). The resulting direction of I is a
match with the arrow in the diode symbol and since E > Vγ the diode is in the “on” state.
The network is then redrawn as shown in figure 2.12(c) with the appropriate equivalent
model for the forward-biased silicon diode. Note for future reference that the polarity of
VD is the same as would result if in fact the diode were a resistive element.
Si + I +
+ +
R VR E R VR
E
− −
− −
• •
Figure 2.12: (a) Series diode configuration. (b) Determining the state of the diode of figure (a).
+ VD −
IR
ID 0 . 7V
+
+
E R VR
−
−
Figure 2.12: (c) Substituting the equivalent model for the “on” diode of figure (a).
The resulting voltage and current levels are the following.

VR
V D = Vγ , V R = E − Vγ and I D = I R = .
R
In figure 2.13(a) the diode of figure 2.12(a) has been reversed. Mentally replacing the
diode with a resistive element as shown in figure 2.13(b) will reveal that the resulting
current direction does not match the arrow in the diode symbol. The diode is in the “off”
state, resulting in the equivalent circuit of figure 2.13(c). Due to the open circuit, the
diode current is 0 A and the voltage across the resistor R is the following:

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VR = I R R = I D R = 0V
Si I +
+ +
+
E R VR
E R VR
−
− −
−
• •
Figure 2.13: (a) Reversing the diode of (b) Determining the state of diode
figure 2.12(a). of figure (a).
+ VD = E −
0 . 7V IR
ID = 0 A +
+
E R VR
−
−
Figure 2.13(c): Substituting the equivalent model for the “off” diode of figure (a).
The fact that VR = 0V will establish E volts across the open circuit as defined by
Kirchhoff’s voltage law. Always keep in mind that under any circumstances–dc, ac
instantaneous values, pulses, and so on – Kirchhoff’s voltage law must be satisfied!
Example: For the series diode configuration of figure shown below, determine VD, VR,
and ID.
+ VD −
Solution: Since the applied voltage establishes
IR
a current in the clockwise direction to match the Si
+ +
arrow of the symbol and the diode is in the “on” state. R 2 . 2 k Ω VR
E 8V
VD = 0.7 V, VR = E – VD = 8 V – 0.7 V = 7.3 V − −
VR 7.3V •
ID = IR = = ≅ 3.32 mA
R 2.2kΩ

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Example: Repeat above example with the diode reversed.

Solution: Removing the diode, we find that the direction of I is opposite to the arrow in
the diode symbol and the diode equivalent is the open
+ VD −
circuit no matter which model is employed. The result is
IR
the network of figure shown below, where ID = 0 A due ID +
+
to the open circuit. Since VR = IRR, VR = (0) R = 0 V. E R VR
8V 2 .2 k Ω −
Applying Kirchhoff’s voltage law around the closed loop −
yields -E +VD + VR = 0 •
and VD = E – VR = E – 0 = E = 8 V
Example: For the series diode configuration of figure shown below, determine VD, VR,
and ID.
+ VD −
Solution: Although the “pressure” establishes a current
ID Si
with the same direction as the arrow symbol the level of +
applied voltage is insufficient to turn the silicon diode R 1 . 2 k Ω VR
E 0 .5 V
−
“on”. The resulting voltage and current levels are therefore
the following: •
ID = 0 A, VR = IRR = IDR = (0 A) 1.2 kΩ = 0 V and VD = E = 0.5 V

Example: Determine V0 and ID for the series circuit of Si Ge IR
figure shown below. + 12 V • Vo
Solution: The resulting current has the same direction ID 5 .6 k Ω
as the arrowheads of the symbols of both diodes, and
the network of figure shown below results because
VT VT
E = 12 V > ( 0.7 V + 0.3 V ) = 1 V .Note the redrawn + 1 − + 2−
•
0 .7 V 0 .3 V
IR +
supply of 12 V and the polarity of V0 across the 5 . 6 k Ω Vo
E 12 V
−
5.6 kΩ resistor. The resulting voltage
V0 = E − Vγ 1 − Vγ 2 = 12V − 0.7V − 0.3V = 11V
V R V0 11V
and I D = I R = = = ≅ 1.96mA
R R 5.6kΩ

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Example: Determine I, V1, V2 and V0 for the series dc configuration of figure shown
below. + V1 −
R1
E1 • V0
10V 4.7kΩ Si I +
R2 2 . 2 kΩ V 2
−
E 2 = −5V
Solution: The sources are drawn and the current direction indicated as shown in figure
below. Note that the “on” state is noted simply by the additional VD= 0.7 V on the figure.
This eliminates the need to redraw the network and avoids any confusion that may result
from the appearance of another source.
• Vo •
+
4 . 7 kΩ I 4 . 7 kΩ +
2 . 2 kΩ 2 . 2 kΩ R 2 V 2 KVL Vo
E1 10 V I E1 10 V −
− −
E2 5V 5V E2
+
The resulting current through the circuit is,
E1 + E 2 − V D 10V + 5V − 0.7V 14.3V
I= = = ≅ 2.07 mA
R1 + R2 4.74kΩ + 2.2kΩ 6.9kΩ
and the voltages are V1 = IR1 = (2.07 mA) (4.7 kΩ) = 9.73 V
V2 = IR2 = (2.07 mA) (2.2 kΩ) = 4.55 V
Applying Kirchhoff’s voltage law to the output section in the clockwise direction will
result in
+E2 -V2 +V0 = 0 and V0 = V2 – E2 = 4.55 V – 5 V = - 0.45 V.
The minus sign indicates that V0 has a polarity opposite to that appearing in figure.
2.6 Parallel and Series–Parallel Configurations

The methods applied in series configurations can be extended to the analysis of parallel
and series-parallel configurations. For each area of application, simply match the
sequential series of steps applied to series diode configurations.

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Example: Determine V0, I1, I D1 and I D2 for the parallel diode configuration as shown in
I1 0.33 k Ω
figure. • • +
R I D1 I D2
E 10 V D1 Si D2 Si Vo
• • • −
Solution: For the applied voltage the

+ VR −
I1
“pressure” of the source is to establish a 0.33 k Ω
• • +
R I D1 I D2
current through each diode in the same + +
E 10V 0.7V 0.7V Vo
direction as shown in figure below. Since the − −
resulting current direction matches that of the • • • −
arrow in each diode symbol and the applied voltage is greater than 0.7 V, both diodes are
in the “on” state. The voltage across parallel elements is always the same and V0 = 0.7 V.
VR E − VD 10V − 0.7V
The current I1 = = = = 28.18 mA
R R 0.33kΩ
I1 28.18 mA
Assuming diodes of similar characteristics, I D1 = I D2 = = = 14.09 mA
2 2
Example: Determine the current I for the network shown in figure below.
Si
I R D1 E2 = 4V
• •
E1 = 20V 2.2 k Ω D2
Si
Solution: 0.7V
+ −
Redrawing the network as shown in figure + VR − I I
reveals that the resulting current direction is such I R = 2.2kΩ
+ +
as to turn on diode D1 and turn off diode D2. The E1 20V E2 4V
− −
resulting current I is then I
E1 − E2 − VD 20V − 4V − 0.7V
I= = ≅ 6.95 mA
R 2.2kΩ

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2.7 Rectifiers
2.7.1 Half-Wave Rectification
This circuit will generate a waveform vo that will have an average value of particular use
in the ac-to-dc conversion process.
vi
+ − •
Vm + +
0 t vi R vo
T T
2
1 cycle
− −
v i = V m sin ω t
Figure 2.14: Half-Wave Rectification.
During the interval t = 0 → T the polarity of the applied voltage is such as to establish
2
“pressure” in the direction indicated and turn on the diode with the polarity appearing
above the diode. Substituting the short-circuit equivalence for the ideal diode will result
in the equivalent circuit shown in figure 2.15, where it is fairly obvious that the output
signal is an exact replica of the applied signal. The two terminals defining the output
voltage are connected directly to the applied signal via the short-circuit equivalence of
the diode.
+ − • •
+ + + + vo
vi R vo vi R v o = vi Vm
T t
− − − −
2
Figure 2.15: Conduction region (0 → T/2).

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For the period t = T → T , the polarity of input vi is shown in figure 2.16 and the
2
resulting polarity across the ideal diode produces an “off” state with an open circuit
equivalent. The result is the absence of a path for charge to flow and v0 = 0V for the
period T → T .
2
− + • •
− + − + vo
Vm vo = 0V
vi R vo vi R vo = 0V
T T t
+ − + −
2
Figure 2.16: Nonconduction region (T/2 → T).
The process of removing one-half the input signal to establish a dc level is aptly called
half-wave rectification.
The input vi and the output v0 were sketched together in figure 2.17 for comparison
purposes. The output signal v0 now has a net positive area above the axis over a full
Vm
period and an average value determined by Vdc = = 0.318Vm
vi
π
Vm
V dc = 0 V
0 t
vo
Vm
V dc = 0 .318 V m
0 t
T
Figure 2.17: Half-wave rectified signal.

The process of removing one-half the input signal to establish a dc level is aptly called
half-wave rectification.

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NOTE: The effect of using a silicon diode with Vγ = 0.7V is demonstrated in figure 2.18
for the forward-bias region. The applied signal must now be at least 0.7V before the diode
can turn “on.” For levels of vi less than 0.7V the diode is still in an open-circuit state and
vo = 0V . When conducting, the difference between vo and vi is a fixed level of
Vγ = 0.7V and v0 = vi −Vγ . The net effect is a reduction in area above the axis, which
naturally reduces the resulting dc voltage level. For situations where Vm >>Vγ equation
given below can be applied to determine the average value with a relatively high level of
accuracy. Vdc ≅ 0.318(Vm − Vγ )
vi vo
+ VT −
•
Vm + + Vm − VT
0.7V
VT = 0.7V
R
0 T T t vi vo 0 T
T
t
2 2
− − Offset due to VT
Figure 2.18: Effect of Vγ on half-wave rectified signal.

Peak Inverse Voltage (PIV) or Peak Reverse Voltage (PRV)
It is the voltage rating that must not be exceeded in the reverse-bias region. The required
PIV rating for the half-wave rectifier can be determined from figure 2.19, which displays
the reverse-biased diode with maximum applied voltage. Applying Kirchhoff’s voltage
law, it is fairly obvious that the PIV rating of the diode must equal or exceed the peak
value of the applied voltage. Therefore, PIV rating ≥ Vm
− V (PIV ) +
•
− −
I =0
Vm Vo = IR = (0)R = 0V
R
+ +
•
Figure 2.19: Determining the required PIV rating for the half-wave rectifier.

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2.7.2 Full Wave Rectification

(i) Bridge Network
The dc level obtained from a sinusoidal input can be improved 100% using a process
called full-wave rectification. The most familiar network for performing such function
appears in figure 2.20 with its four diodes in a bridge configuration.
vi
•
+ D2
Vm D1
vi − vo +
0 T T t R
2 D3
− D4
•
Figure 2.20: Full-wave bridge rectifier.
During period t = 0 → T the polarity of the input is shown in figure 2.21. The resulting
2
polarities across the ideal diodes are shown to reveal that D2 and D3 are conducting
while D1 and D4 are in the “off” state.

• +
+ +
" off " " on"
− − v + −
o
vi
+ R +
" on" − − " off "
− •
Figure 2.21: FWR for the period 0 → T/2 of the input voltage vi.
The net result is the configuration of figure 2.22, with its indicated current and polarity
across R. Since the diodes are ideal the load voltage v0 = vi .
vi vo
+
Vm Vm
R
t vi t
0 T − vo + 0 T
2 2
−
Figure 2.22: Conduction path for the positive region of vi .

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For the negative region of the input the conducting diodes are D1 and D4 , resulting in the
configuration of figure 2.23. The important result is that the polarity across the load
resistor R is the same as during positive half cycle. vo
vi
•
− Vm
− vo +
vi • • t
t R 0 T T
0 T T
2
2 Vm +
•
Figure 2.23: Conduction path for the negative region of vi .
Over one full cycle the input and output voltages will appear as shown in figure 2.24.
vi vo
Vm Vm
Vdc = 0.636Vm
0 t t
T T 0 T T
2 2
Figure 2.24: Input and output waveforms for a full-wave rectifier.

Since the area above the axis for one full cycle is now twice that obtained for half-wave
2Vm
system, the dc level has also been doubled and Vdc = = 0.636Vm .
π
NOTE: If silicon rather than ideal diodes are employed as shown in figure 2.25, an
application of Kirchhoff’s voltage law around the conduction path would result in
− vi + Vγ + v o + Vγ = 0 And v o = vi − 2Vγ
The peak value of the output voltage v0 is therefore V0max = Vm − 2Vγ

+ vo
+ Vγ = 0.7 V
−
R Vm − 2Vγ
vi
− vo +
+ V = 0.7 V t
γ 0T
− T
−
2
Figure 2.25: Determining Vomax for silicon diodes in the bridge configuration.

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For situations where Vm >> 2Vγ equation given below can be applied to determine the
average value with a relatively high level of accuracy.

Vdc ≅ 0.636(Vm − 2Vγ )
PIV
The required PIV of each diode (ideal) can be determined from figure 2.26 obtained at
the peak of the positive region of the input signal. For the indicated loop the maximum
voltage across R is Vm and the PIV rating is defined by PIV ≥ Vm
+
PIV
−
− Vm +
Figure 2.26: Determining the required PIV rating for the bridge configurations.
(ii) Center-Tapped transformer

A second popular full-wave rectifier appears in figure 2.27 with only two diodes but
requiring a center-tapped (CT) transformer to establish the input signals across each
D1
section of the secondary of the transformer.
vi
+
Vm + vi
R
vi •−
0 T t CT − vo +
+
−
vi
−
D2
Figure 2.27: Centre-tapped transformer full-wave rectifier.
During the positive portion of vi applied to the primary of the transformer, the network
will appear as shown in figure 2.28. D1 assumes the short-circuit equivalent and D2 the
open circuit equivalent as detrmined by the secondary voltages and the resulting current
directions.The output voltage v0 appears as shown in figure 2.28.

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vi vo
+
Vm
Vm
Vm +
− vo +
vi •
−
0 t CT
R 0 T t
T
+ Vm 2
2 −
− − +
Figure 2.28: Network conditions for the positive region of vi .

During the negative portion of the input the network appears as shown in figure 2.29,
reversing the roles of the diodes but maintaining the same polarity for the voltage across
the load resistor R. The net effect is the same output as that appearing in positive half
cycle with the same dc levels.
vo
vi − − +
− Vm
Vm
+ R
vi •
CT 0 t
0 T t − vo + T T
T −
2
2 +
Vm Vm
+
Figure 2.29: Network conditions for the negative region of vi .
PIV: The network of figure 2.30 will help us determine the net PIV for each diode for
this full-wave rectifier. Inserting the maximum voltage for the secondary voltage and Vm
as established by the adjoining loop will result in
PIV = Vsecondary + VR = Vm + Vm and PIV ≥ 2Vm .
− PIV +
−
Vm
+ R
• •
− Vm +
Figure 2.30: Determining the PIV level for the diodes.

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2.8 Clippers
There are a variety of diode networks called clippers that have the ability to “clip” off a
portion of the input signal without distorting the remaining part of the alternating
waveform. The half-wave rectifier is an example of the simplest form of diode clipper–
one resistor and diode. Depending on the orientation of the diode, the positive or negative
region of the input signal is “clipped” off.
2.8.1 Series Clippers (Positive and Negative)
The response of the series configuration of figure 2.31(a) to a variety of alternating
waveforms is provided in figure 2.31(b). Although first introduced as a half-wave
rectifier (for sinusoidal waveforms), there are no boundaries on the type of signals that
can be applied to a clipper.
•
+ +
vi R vo
− −
•
Figure 2.31(a): Series clipper.
vi vO vi vi
V V V V
0 t t 0 t t
−V −V
Figure 2.31(b): Input and output waveforms.
The addition of dc supply such as shown in figure 2.32 can have a pronounced effect on
the output of a clipper. Our initial discussion will be limited to ideal diodes and the effect
of Vγ will be discussed later.

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vi
V
•
Vm + +
vi R vo
0 T T t
2 − −
− Vm
•
Figure 2.32: Series clipper with a dc supply.
There is no general procedure for analyzing above networks, but there are a few thoughts
to keep in mind before analyzing these circuits.
1. Make a mental sketch of the response of the network based on the direction of the
diode and the applied voltage levels.
The direction of the diode suggests that the signal vi must be positive to turn it on. The dc
supply further requires that the voltage vi be greater than V volts to turn the diode on.
The negative region of the input signal is “pressuring” the diode into the “off” state,
supported further by the dc supply. In general, therefore, we can be quite sure that the
diode is an open circuit (“off” state) for the negative region of the input signal.
2. Determine the applied voltage (transition voltage) that will cause change in state
for the diode.
For the ideal diode the transition between states will occur at the point on the
characteristic where vd = 0V and id = 0 A . Applying the condition id = 0 A at vd = 0 will
result in the configuration of figure 2.33, where it is recognized that the level of vi that
will cause a transition in state is: vi = V .
V vd = 0V
+ − id = 0 Α
•
+ +
vi R v o = i R R = i d R = ( 0) R = 0 V
− −
•
Figure 2.33: Determining the transition level.

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For an input voltage greater than V volts the diode is in the short-circuit state, while for
input voltage less than V volts it is in the open-circuit or “off” state.
3. Be continually aware of the defined terminals and polarity of vo .
When the diode is in the short-circuit state such as shown in figure 2.34, the output
voltage vo can be determined by applying Kirchhoff’s voltage law in the clockwise
direction. −vi + V + vo = 0 and vo = vi − V .

V
+ −
•
+ +
vi R vo
KVL
− −
•
Figure 2.34: Determining vo .
4. It can be helpful to sketch the input signal above the output and determine the
output at instantaneous values of the input.
vi
It is then possible that the output voltage can be Vm
sketched from the resulting data points of vo as

0 T T t
demonstrated in figure 2.35. 2
Keep in mind that at an instantaneous value of vi
the input can be treated as a dc supply of that value vo
and the corresponding dc value (the instantaneous

value) of the output determined. For instance, at (Vm − V )
vi = Vm the network to be analyzed appears in

0 T T t
figure 2.36. 2
Figure 2.35: Determining levels of vo .

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For Vm > V the diode is in the short-circuit state and vo = Vm − V . At vi = V the diodes
change state and at vi = −Vm , vo = 0V and the complete curve for vo can be sketched as
shown in figure 2.37.
V vi vo
+ −
•
+ Vm
Vm − V
+
v i = Vm R vo V
− 0 T T t 0 T T t
2 2
•
−
vi = V (diodes change state)
Figure 2.36: Determining vo when vi = Vm . Figure 2.37: Sketching vo .
Example: Determine the output waveform for the network shown in figure below.
vi
V = 5V
•
20V + − + +
vi R vo
0 T T t
2 − −
•
Solution: The diode will be in “on” state for the positive region of vi , especially when we
note the aiding effect of V= 5V. The network will then appear as shown in figure (a)
and v0 = vi + 5V . Substituting id = 0 at v d = 0 for the transition levels, we obtain the
network of figure (b) and vi = −5V .

vd = 0 V
• •
+ − + + + − + i =0A +
5V 5V d
vi R vo vi R v o = 0V
− − − −
• •
Figure (a): v 0 with diode in the “on” state. Figure (b): Determining the transition level.

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For vi more negative than − 5V the diode will enter its open-circuit state, while for
voltages more positive than − 5V the diode is in the short-circuit state. The input and
output voltage appear in figure shown below.
vi vi
20 vi + 5V = 20V + 5V = 25V
5V vo = 0V + 5V = 5V
− 5V T T t 0 T T t
2 2 vo = −5V + 5V = 0V
Figure: Sketching v 0 .
Example: Repeat above example for the square-wave input shown in figure below.
vi V = 5V
•
+ − + +
20
vi R vo
0 T T t − −
•
2 − 10
Solution: For vi = 20V ( 0 → T 2 ) the network of figure (a) will result. The diode is in
the short-circuit state and vo = 20V + 5V = 25V . For vi = −10V the network of figure (b)
will result, placing the diode in the “off” state and vo = i R R = 0 × R = 0V . The resulting
output voltage appears in figure (c).
vo
• •
− + + − + +
5V − 5V 25 V
+
20V R vo 10V R vo = 0V 0V
− + 0 T T t
• − • − 2
Figure (a): v o at vi = 20V Figure (b): v o at vi = −10V Figure(c): sketching v o

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2.8.2 Parallel Clippers (Positive and Negative)

The network of figure 2.38 is the simplest of parallel diode configurations with the output
for the same inputs. The analysis of parallel configurations is very similar to that applied
to series configurations, as demonstrated in the next example.
•
+ R +
vi vo
− −
•
vi vo vi vo
V V
0 t 0 t 0 t 0 t
−V −V −V −V
Figure 2.38: Response to a parallel clipper.
Example: Determine v 0 for the network of figure shown below.

vi
•
+ R +
16
vi vo
0 t V 4V
− −
− 16 •
Solution: The polarity of the dc supply and the direction of the diode strongly suggest
that the diode will be in the “on” state for the negative region of the input signal. For this
region the network will appear as shown in figure below where the defined terminals for
v 0 require that v0 = V = 4V . •
− R +
vi vo = V = 4V
V 4V
+ −
•
Figure: v0 for the negative region of vi.

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The transition state can be determined from figure shown

below, where the condition id = 0 A at vd = 0V has been v R = 0V
•
+ +
imposed. The result is vi (transition) = V = 4 V . id = 0 Α vd = 0V
vi vo
Since the dc supply is obviously “pressuring” the diode to +
V− 4V
stay in the short-circuit state, the input voltage must be − −
•
greater than 4 V for the diode to be in the “off” state. Any Figure: Determining the
input voltage less than 4V will result in a short-circuited transition level.
diode.
For the open-circuit state the network will appear as shown in figure below,
where v0 = vi .Completing the sketch of v 0 results in the waveform of figure shown below.
vi
16
v R = 0V
• 4 V transition level
+ R + 0 T t
iR = 0Α T
vi vo vo 2
V 4V 16
− −
• 4V
Figure: Determining v0 for the
0 T T t
open state of the diode
2
Figure: Sketching v 0 .
To examine the effect of Vγ on the output voltage, the next example will specify a silicon
diode rather than an ideal diode equivalent.

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Example: Repeat above example using a silicon diode with Vγ = 0.7 V.
Solution: The transition voltage can first be determined by applying the condition
id = 0 A at v d = 0.7V and obtaining the network of figure shown below. Applying
Kirchhoff’s voltage law around the output loop in the clockwise direction, we find that
R
− vi − Vγ + V = 0 •
+ id = 0 Α +
−
and vi = V − Vγ = 4 − 0.7 = 3.3V Vγ 0. 7 V
vi + vo
v R = id R = 0 × R = 0V +
V 4V
− − −
•
Figure: Determining the transition level.

For input voltages greater than 3.3V, the diode will be an open circuit and v0 = vi . For
input voltages of less than 3.3 V, the diode will be in the “on” state and the network of
figure shown below results, where v0 = 3.3V .
Note that the only effect of Vγ was to drop the transition level to 3.3 V from 4 V.
There is no question that including the effects of Vγ was to drop the transition level to
3.3 V from 4V.
id vo
•
+ R +
− 16
0. 7 V
vi + vo 3.3V
+ 0 T T t
4V
− − −
• 2
Figure: Determining vo for the diode Figure: Sketching v 0 .
of figure 2.83 in the “on” state.

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Summary Clippers Networks

A variety of series and parallel clippers with the resulting output for the sinusoidal input
are provided in figures shown below. In particular, note the response of the last
configuration, with its ability to clip off a positive and a negative section as determined
by the magnitude of the dc supplies.
Simple Series Clippers (Ideal Diodes)

Positive:
vi vo
•
Vm + +
vi R vo 0
t ETH
−Vm − −
• − Vm
Negative:
vi vo
Vm +
•
+ Vm
vi R vo
t t
− −
−Vm •

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Biased Series Clippers (Ideal Diodes)

Positive:
vi vo
•
Vm + +
V
vi R vo 0
t t
−V
−Vm − −
•
− (V m + V )
vo
vi
•
Vm + +
V V
vi R vo 0
t t
− − − (V m − V )
−Vm •
Negative
vi vo
Vm •
+ + (V m −V )
V
vi R vo 0
t t
−V
−Vm − −
•
vo
vi
(V m +V )
Vm •
+ +
V V
vi R vo 0
t t
−Vm − −
•

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Simple Parallel Clippers (Ideal Diodes)

Positive:
vi vo
•
Vm + R +
vi vo 0
t t
−Vm − − Vm
•
Negative:
vi vo
Vm • Vm
+ R +
vi vo t
t
−Vm − −
•
Biased Parallel Clippers (Ideal Diodes)

vi vo
•
Vm + R +
V
vi vo 0
t t
− V
−Vm •
− − Vm
vi
vo
•
Vm + R +
vi vo 0 t
t
V −V
−Vm − −
• − Vm

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Negative:
vi vo
•
Vm + R + Vm
vi vo 0
t t
V −V
−Vm − −
•
vi
vo
• Vm
Vm + R +
V
vi vo 0 t
t
− V
−Vm −
•
Miscellaneous
vi vo
• •
Vm + R +
V1 V1 > V 2
vi vo 0
t t
− V2
−Vm − V1 V2
• •
−

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2.9 Clampers
The clamping network is one that will “clamp” a signal to a different dc level. The
network must have a capacitor, a diode, and a resistive element, but it can also employ an
independent dc supply to introduce an additional shift. The magnitude of R and C must be
chosen such that the time constant τ = RC is large enough to ensure that the voltage
across the capacitor does not discharge significantly during the interval the diode is
non-conducting. Throughout the analysis we will assume that for all practical purposes
the capacitor will fully charge or discharge in five time constants.
The network of figure 2.39 will clamp the input signal to the zero level (for ideal diodes).
vi
C
• •
V + +
vi R vo
0 T T t
2
−V − −
• •
Figure 2.39: Clamper.
During the interval 0→T/2 the network will appear as C

− • •
shown in figure 2.40, with the diode in the “on” state + +
V
effectively “shorting out” the effect of resistor R. The +
V R vo
resulting RC time constant is so small (R is −
determined by the inherent resistance of the network) −
• •
Figure 2.40: Diode “on” and the
that the capacitor will charge to V volts very quickly. capacitor charging to V volts.
During this interval the output voltage is directly across C
• •
the short circuit and vo = 0 V. + − +
V
When the input switches to –V state, the network will +
− vo
V vo R
appear as shown in figure 2.41, with the open-circuit + −
equivalent for the diode determined by the applied •
−
•
signal and stored voltage across the capacitor-both Figure 2.41: Determining vo with
the diode “off”.
“pressuring” current through the diode from cathode to
anode.
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Now that R is back in the network the time constant determined by the RC product is
sufficiently large to establish a discharge period 5τ much greater than the period T/2→T
and it can be assumed on an approximate basis that the capacitor holds onto all its charge
and therefore voltage (since V = Q/C) during this period. vi
Applying Kirchhoff’s voltage law around the input loop will
result in V
+ V+ V+ vo = 0 and vo = – 2V.
0 T T t
The negative sign resulting from the fact that the polarity of −V
2
2V is opposite to the polarity defined for vo. The resulting vo

output waveform appears in figure 2.42 with the input signal.
0 T T t
The output signal is clamped to 0 V for the interval 0 to T/2
2
but maintains the same total swing (2V) as the input.
− 2V
For a clamping network:
The total swing of the output is equal to the total swing of the
Figure 2.42: Sketching vo.
input signal.
This fact is an excellent checking tool for the result obtained.
In general, the following steps may be helpful when analyzing clamping networks:
1. Start the analysis of clamping networks by considering that part of the input signal that
will forward bias the diode.
2. During the period that the diode is in the “on” state, assume that the capacitor will
charge up instantaneously to a voltage level determined by the network.
3. Assume that during the period when the diode is in the “off” state the capacitor will
hold on to its established voltage level.
4. Throughout the analysis maintain a continual awareness of the location and reference
polarity for vo to ensure that the proper levels for vo are obtained.
5. Keep in mind the general rule that the total swing of the total output must match the
swing of the input signal.

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Example: Determine vo for the network of figure (a) for the input indicated.
vi f = 1000 Ηz C = 1μF
10 • •
+ +
0 t1 t2 t3 t4 t vi R 100 kΩ vo
30V
V 5V
− −
− 20 • •
T
Figure (a): Applied signal and network.
Solution: Note that the frequency is 1000 Hz, resulting in a period of 1 ms and an interval
of 0.5 ms between levels. The analysis will begin with the period t1→ t2 of the input
signal since the diode is in it short-circuit state as recommended by comment 1.
For this interval the network will appear as shown in C
• •
figure (b). The output is across R, but it is also − − + +
VC
directly across the 5V battery if you follow the direct R 100 kΩ vo
20V +
connection between the defined terminals for vo and V 5V
− −
the battery terminals. The result is vo = 5V for this + • •
Figure (b): Determining vo and VC
interval.
with the diode in the “on” state.
Applying Kirchhoff’s voltage law around the input
loop will result in
+20V-VC +5V = 0 and VC = 25 V. C
+ • •
The capacitor will therefore, charge up to 25V, as + − +
25
stated in comment 2. In this case the resistor R is not 10 V R 100 kΩ vo
+
shorted out by the diode but a Thevenin’s equivalent V 5V
− −
−
circuit of that portion of the network which includes • •
the battery and the resistor will result in RTh = 0 Ω with

Figure (c): Determining vo with the
ETh = V = 5 V. diode in the “off” state.

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For the period t2 → t3 the network will appear as shown in figure (c). The open-circuit
equivalent for the diode will remove the 5V battery from having any effect on vo, and
applying Kirchhoff’s voltage law around the outside loop of the network will result in
-10 V - 25 V – vo = 0 and vo = 35 V.
The time constant of the discharging network of figure (c) is determined by the product
RC and has the magnitude: τ = RC = (100 kΩ) (0.1 μF) = 0.01 s = 10 ms
vi vo
35
10
0 t1 t2 t3 t4 t 30V
30V
5
− 20
0 t1 t2 t3 t4 t
Figure (d): vi and vo for the clamper.
The total discharge time is therefore 5τ = 5 (10 ms) = 50 ms.

Since the interval t2 → t3 will only last for 0.5 ms, it certainly a good approximation that
the capacitor will hold its voltage during the discharge period between pulses of the input
signals. The resulting output appears in figure (d) with the input signal. Note that the
output swing of 30 V matches the input swing as noted in step 5.

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Example: Repeat above example using a silicon diode with Vγ = 0.7 V.
Solution: For the short-circuit state the network now

• •
− − + +
takes form of figure (a) and vo can be determined by VC − 0.7 V
Kirchhoff’s voltage law in the output section. 20 V + R vo
-5V+0.7 V+ vo = 0 5V
+ −
and vo = 5V – 0.7 V = 4.3 V • •
Figure (a): Determining vo and VC

with the diode in the “on” state
For the input section Kirchhoff’s voltage law will

result in • •
+ − + +
+20V-VC –0.7V+5V = 0 24.3V
10 V R vo
and VC = 25 V – 0.7 V = 24.3 V. +
5V
For the period t2 → t3 the network will now appear as − −
− • •
in figure (b) with the only change being the voltage
across the capacitor. Applying Kirchhoff’s voltage law Figure (b): Determining vo with the
yields diode in the open state.
-10V-24.3 V+ vo = 0 and vo = 34.3 V.

The resulting output appears in figure (c) verifying the statements that the input and
output swings are the same.
vo
34.3V
30V
4.3V
0 t1 t2 t3 t4 t
Figure (c): Sketching vo.

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Summary Clamping Networks

vi
• • vo
V + +
C
T
0 t vi R vo 0 t
−V − − 2V
• •
− 2V
vi vo
• •
V + +
C
T 2V
0 t vi R vo
−V − − 0 t
• •
vi
vo
• •
V + +
C
T V1
0 t vi R vo 0 t
2V
−V −
V1
• •
−
vi vo
• •
V + +
C
T 2V
0 t vi R vo
V1
−V V1 0
− − t
• •
vi
vo
• •
V + +
C
T 0
0 t vi R vo t
−V1
−V − V1
• •
− 2V
vi vo
• •
V + +
C
T
0 t vi R vo
2V
−V V1
− −
• • t
− V1

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2.10 Zener Diode

The analysis of networks employing Zener diodes is quite similar to that applied to the
analysis of semiconductor diodes. First the state of the diode must be determined
followed by a substitution of the appropriate model and a determination of the other
unknown quantities of the network. The Zener model to be employed for the “on” state
and for the “off” state as defined by a voltage less than VZ but greater than 0 V with the
polarity indicated as shown in figure 2.43.
+ + +
Vz Vz V
− − −
‘’on’’ ‘’off’’ ( VZ > V > 0V )

(a) (b)
Figure 2.43: Zener diode equivalents for the (a) “on” and (b) “off” states.
2.10 .1 Case-I (Vi and RL fixed ) R
•
The simplest of Zener diode networks appears as IZ
+
shown in figure 2.44. Vi VZ RL
− PZM
The applied dc voltage is fixed, as is the load
resistor. The analysis can fundamentally be • •
broken down into two steps. Figure 2.44: Basic Zener regulator.
1. Determine the state of the Zener diode by R
•
removing it from the network and calculating
+ +
the voltage across the resulting open circuit. Vi V VL RL
RLVi − −
Open circuit voltage V = VL = .
R + RL • •
If V ≥ VZ , the Zener is “on” and if V < VZ , the Figure 2.45: Determining the state of the
Zener diode.
Zener is “off.”

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2. Substitute the appropriate equivalent circuit and solve for the desired unknowns.
IR
R
•
IL
IZ
+ +
Vi VZ R V
L L
PZM − −
• •
Figure 2.46: Substituting the Zener equivalent for the “on” situation.
When the Zener is “on” then VL = VZ and I R = I Z + I L ⇒ I Z = I R − I L
VL V V − VL
where I L = and I R = R = i .
RL R R
Power dissipated by the Zener diode PZ = VZ I Z ≤ PZM .
Note: If the Zener diode is in the “on” state, the voltage across the diode is not V volts.
When the system is turned on the Zener diode will turn “on” as soon as the voltage across
the Zener diode is VZ volts . It will then “lock in” at this level and never reach the higher
level of V volts.
Zener diodes are most frequently used in regulator network or a reference voltage.
A simple regulator designed to maintain a fixed voltage across the load RL . For values of
applied voltage greater than required to turn the Zener diode “on,” the voltage across the
load will be maintained at VZ volts . If the Zener diode is employed as a reference voltage,
it will provide a level for comparison against other voltages.

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Example: (a) For the Zener diode network of figure (a), determine VL , VR , I Z and PZ .
(b) Repeat part (a) with RL = 3 k Ω . + VR −

R
Solution: (a) Following the suggested procedure •
IZ
the network is redrawn as shown in figure (b). +
Open circuit voltage Vi 16 V VZ = 10 V RL 1 . 2 kΩ V L
PZM = 30 mW −
RLVi 1.2k Ω (16 V )
V= = = 8.73 V • •
R + RL 1 k Ω + 1.2 k Ω
Figure (a)
Since V = 8.73 V is less than VZ = 10 V the diode
is in the “off” state. Substituting the open-circuit
R IR
equivalent we will find that • IL
1kΩ IZ
VL = V = 8.73 V +
+
Vi 16 V V RL 1kΩ VL
VR = Vi − VL = 16 V − 8.73 V = 7.27 V − −
I Z = 0 A and PZ = VZ I Z = 0 W . • •
(b) Open circuit voltage

Figure (b): Determining V for the
RLVi 3 k Ω (16 V ) regulator of figure (a).
V= = = 12 V
R + RL 1 k Ω + 3 k Ω
+ VR −
Since V = 12 V is greater than VZ = 10 V , the R
•
diode is in the “on” state and the network of 1kΩ IZ
+
figure (c) will result. Vi 16 V VZ RL 3kΩ VL
VL = VZ = 10 V and VR = Vi − VL = 6 V −
• •
V 10V
with I L = L = = 3.33 mA
RL 3k Ω Figure (c): Network of figure (a) in
the “on” state.
VR 6V
and I R = = = 6 mA .
R 1 kΩ
I Z = I R − I L = 6 mA − 3.33 mA = 2.67 mA . The power dissipated, PZ = VZ I Z = 26.7 mW
which is less than the specified PZM = 30 mW .

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2.10.2 Case-II ( fixed Vi and variable RL )

Due to the offset voltage VZ , there is a specific range of resistor values (and therefore
load current) which will ensure that the Zener is in the “on” state. Too small a load
resistance RL will result in a voltage VL across the load resistor less than VZ and the
Zener device will be in the “off” state.
To determine the minimum load resistance that will turn the Zener diode on, simply
calculate the value of RL that will result in a load voltage VL = VZ .
RLVi RVZ
That is, V L = VZ = . Solving for RL we have R Lmin = .
RL + R Vi − VZ
Any load resistance value greater than the RL obtained from above equation will ensure
that the Zener diode is in the “on” sate and the diode can be replaced by its VZ source
equivalent.
This condition establishes the minimum RL , but in turn specifies the maximum I L as
VL V
I Lmax = = Z .
RL RLmin
Once the diode is in the “on” state, the voltage across R remains fixed at
VR = Vi − VZ
VR
and I R remains fixed at IR =
R
The Zener current I Z = I R − I L resulting in a minimum I Z when I L is a maximum and a
maximum I Z when I L is a minimum value since I R is constant.
Since I Z is limited to I ZM as provided on the data sheet, it does affect the range of RL
and therefore I L . Substituting I ZM for I Z establishes the minimum I L as
I Lmin = I R − I ZM
VZ
and the maximum load resistance as R Lmax = .
I Lmin

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IR
Example: (a) For the network of figure shown 1kΩ
• IL
determines the range of RL and I L that will result in + R IZ
VRL being maintained at 10 V. Vi = 50 V VZ = 10 V RL

I ZM = 32 mΑ
(b) Determine the maximum voltage rating of the − •
diode.
Solution:
(a) To determine the value of RL that will turn the Zener diode on, apply equation
R Lmin =
RVZ
=
(1 kΩ )(10V ) = 10 kΩ = 250 Ω
Vi − VZ 50 V − 10 V 40
The voltage across the resistor R is then determined by equation
VR 40 V
VR = Vi − VZ = 50 V − 10 V = 40 V and IR = = = 40 mA .
R 1 kΩ
The minimum level of I L is then determined by equation
I Lmin = I R − I ZM = 40 mΑ − 32 mΑ = 8 mA
VZ 10V
with R Lmax = = = 1.25 kΩ .
I Lmin 8 mA
(b) Pmax = VZ I ZM = (10 V )( 32 mA ) = 320 mW .
2.10.3 Case-III ( fixed RL and variable Vi )

For fixed values of RL , the voltage Vi must be sufficiently large to turn the Zener diode
on. The minimum turn-on voltage Vi = Vimin is determined by
RLVi (R + R )VZ
V L = VZ = and Vimin = L .
RL + R RL
The maximum value of Vi is limited by the maximum Zener current I ZM .
Since I ZM = I R − I L , I Rmax = I ZM + I L
Since I L is fixed at VZ / RL and I ZM is the maximum value of I Z , the maximum Vi is
defined by Vimax = VRmax + VZ = I Rmax R + VZ .

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Example: Determine the range of values of Vi that will maintain the Zener diode in the
“on” state. IR
R
• IL
+ 220 Ω IZ
+
VZ = 20 V RL 1 . 2 kΩ V L
Vi
I ZM = 60 mΑ −
− •
Solution:
(RL + R )VZ (1200 Ω + 220Ω + 20V ) = 23.67 V
Vimin = =
RL 1200 Ω
VL VZ 20 V
IL = = = = 16.67 mA
RL RL 1.2 k Ω
I Rmax = I ZM + I L = 60 mΑ + 16.67 mΑ = 76.67 mA
Vimax = I Rmax R + VZ = (76.67 mA) (0.22 k Ω) + 20 V =16.87 V + 20 V = 36.87 V
2.10.4 Zener as a Reference Levels

Two or more reference levels can be established by placing Zener diodes in series as
shown in figure 2.47. As long as Vi is greater than the sum of VZ1 and VZ 2 , both diodes
will be in the “on” state and the three reference voltages will be available.
+ 20 V −
•
5kΩ + +
10 V (VZ1 )
+ −
Vi 50V • 30 V
− +
20 V (VZ )
2
− −
• •
Figure 2.47: Establishing three reference voltage levels.

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Two back-to-back Zener can also be used as an ac regulator as shown in figure 2.48. For
the sinusoidal signal vi the circuit will appear as shown in figure 2.49 at the
instant vi = 10 V .
vi vo
•
+ 5kΩ +
+
22V Z1
− 20V
vi 20V
ωt vo ωt
0 Zeners + 0 20V
− 22V Z2
−
− −
•
Figure 2.48: 40-V peak-to-peak sinusoidal ac regulator.

I
•
5kΩ +
Z1 •
− 20V
Vi = 10V •
+ 0 V
Z2
−
• •
Figure 2.49: circuit operation at vi = 10 V .

The region of operation for each diode is indicated in the adjoining figure. Note that Z1 is
in a low-impedance region, while the impedance of Z2 is quite large, corresponding with
the open-circuit representation. The result is that vo = vi when vi = 10 V . The input and
output will continue to duplicate each other until vi reaches 20 V. Z2 will then “turn on”
(as a Zener diode) while Z1 will be in a region of conduction with a resistance level
sufficiently small compared to the series 5 kΩ resistor to be considered a short circuit.
The resulting output for the full range of vi is provided in figure 2.48. Note that the
waveform is not purely sinusoidal, but its rms value is lower than that associated with a
full 22 V peak signal.

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Q1. Which graph represents the nature of the curve between charge density ρ and
distance r near the depletion region of p − n junction diode?
ρ ρ
(a) (b)
p n p n
r r
ρ ρ
(c) p n (d) p n
r r
Q2. The junction capacitance of a p − n junction depends on

(a) Doping concentration only
(b) Applied voltage only
(c) Both doping concentration and applied voltage.
(d) Barrier potential only.
Q3. Which of the following statements related to Zener diode is correct?

(a) Its depletion layer is large
(b) Zener breakdown involves collision
(c) High electric field breaks the covalent bonds
(d) On increasing temperature breakdown voltage increases

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Q4. Consider a Ge diode with N D = N A = 8 × 1014 cm −3 and intrinsic carrier
concentration ni = 2 × 1013 cm−3 . At room temperature of 300 K , the height of the

potential barrier under open circuited conditions is
(Boltzmann constant k = 1.38 × 10−23 J / K )

(a) 0.1 V (b) 0.2 V (c) 0.3 V (d) 0.4 V
Q5. In the following circuit, the voltage drop across the
ideal diode in forward bias condition is 0.7 V . The
12kΩ
current passing through the 6kΩ resistance is
+ 24 Volt
(a) 0.7 mA
−
(b) 1.5 mA
6kΩ 3.3 kΩ
(c) 2.0 mA
(d) 2.5 mA
Q6. The circuit shown in figure has two oppositely connected ideal diodes in parallel,
4Ω
then the current flowing through 4Ω resistance is
(a) 1.33 A D1 D2
(b) 1.71 A
12 V
3Ω 2Ω
(c) 2.00 A
(d) 2.31 A • •
Q7. A parallel diode configuration is shown in figure given below, the value of the diode
currents I1 and I 2 are?
0 . 33 k Ω
(a) I1 = 15 mA, I 2 = 15 mA,
I1 I2
(b) I1 = 14 mA, I 2 = 14 mA, 10 V Si Si
(c) I1 = 15 mA, I 2 = 14 mA,
(d) I1 = 14 mA, I 2 = 15 mA,

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Q8. A diode D as shown in the circuit has an i-v relation that can be approximated by
⎧v D2 + 2v D , for v D > 0 1Ω
iD = ⎨
⎩0, for v D ≤ 0
iD
The value of iD in the circuit is +
10 V D vD
−
(
(a) −1 + 11 A ) (b) 8 A
(c) 5 A (d) 2 A
Q9. Which one of the following figures is the correct representation of a full-wave
rectifier circuit consisting of two diodes, a load resistor and a centre-tapped transformer?
Figure 1 Figure 2
Figure 3 Figure 4
(a) Figure 1 (b) Figure 2 (c) Figure 3 (d) Figure 4

Ans: (c)

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Q10. For the rectifier circuit shown in the figure, the sinusoidal voltage ( V1 or V2 ) at the
output of the transformer has a maximum value of 5 V . The load resistance RL is1 kΩ .
If I av is the average current through the resistor RL the circuit corresponds to a
20
(a) Full wave rectifier with I av = mA V1
π
20
(b) Half wave rectifier with I av = mA RL
π
Vin
~ Vout
10
(c) Half wave rectifier with I av = mA
π
10 V2
(d) Full wave rectifier with I av = mA
π
Q11. An a.c. supply of 220 V , 50 Hz is applied to a half wave rectifier circuit through a
transformer of turn ratio 10 :1 . The forward resistance of the diode is100 Ω and the load
resistance is 2 kΩ , then the output d.c. voltage and the peak inverse voltages are:
(a) 7V , 7.5V (b) 8V , 15.5V (c) 9V , 31V (d) 10V , 62V
Q12. An a.c. voltage of 220 V , 50 Hz is applied to the primary of a 5 :1 step down
transformer. The secondary of the transformer is centre taped and connected to a full
wave rectifier with a load resistance 500 Ω . Forward resistance of the diode is 50 Ω , then
the output d.c. voltage and the peak inverse voltages are:
(a) 18V , 124V (b) 36V , 124V (c) 18V , 62V (d) 36V , 62V
Q13. Identify the correct output waveforms for the circuit given below (assume diodes
to be ideal)
vi
V
•
Vm + +
vi R vo
t
−Vm − −
•

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vo vo
(a ) 0 (b ) V
t
−V 0
t
− (V m − V )
− (V m + V )
vo vo
(V m +V )
(c ) (V m −V ) (d )
0 V
t 0
−V t
to be ideal) vi V
•
+ +
Vm
vi R vo
t
−Vm − −
•
vo vo
(a ) 0 (b ) V
t
−V 0
t
− (V m − V )
− (V m + V )
vo vo
(V m +V )
(c ) (V m −V ) (d )
0 V
t 0
−V t

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vi
to be ideal)
•
Vm + R +
vi vo
t
− V
−Vm •
−
vo
vo
(a ) V (b )
0
t 0 t
− Vm −V
− Vm
vo
vo
Vm Vm
(c ) (d )
V
0
t 0 t
−V
to be ideal)
vi
•
Vm + R +
vi vo
t
− V
−Vm •
−

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vo
vo
(a ) V (b )
0
t 0 t
− Vm −V
− Vm
vo
vo
Vm Vm
(c ) (d )
V
0
t 0 t
−V
to be ideal)
vi V1 > V 2
• •
Vm + R +
vi vo
t
− V1 V2
−Vm • •
−
vo vo
(a ) (b )
V V1 V1 > V 2
0 0
t t
− V2
− Vm
vo vo
(c ) Vm
(d )
V1
0 0
t t
−V − V2

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to be ideal) vi
• •
V + +
C
T
0 t vi R vo
−V V1
− −
• •
vo
vo
(a ) 0 (b ) V1
t
− V1 0 t
2V
2V
vo
vo
(c ) (d ) 2V
2V
0 V1
t 0
− V1 t
vi
to be ideal)
• •
V + +
C
T
0 t vi R vo
−V V1
− −
• •
vo
vo
(a ) 0 (b ) V1
t
− V1 0 t
2V
2V
vo
vo
(c ) (d ) 2V
2V
0 V1
t 0
− V1 t

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Q20. A zener diode network is shown in the figure given below. The power dissipated by
the zener diode is:
1kΩ
(a) 20 mW
IZ
(b) 30 mW
16V VZ = 10V 1.2kΩ
(c) 40 mW
(d) Zero
Q21. For a Zener shunt regulator, Zener voltage is10V , series resistance is 1 kΩ , load
resistance is 2 kΩ and the input voltage varies from 20V to 40V . Then the maximum
and the minimum values of Zener currents are:
(a) 20 mA and 5 mA (b) 20 mA and 10 mA
(c) 25 mA and 5 mA (d) 25 mA and 10 mA
Q22. The range of values of Vi that will maintain the Zener diode in the “ON” state is
( VZ = 20V , I ZM = 60mA ) I
(a) 24V − 37V +
220 Ω IZ IL
(b) 14V − 27V Vi
1 .2 k Ω
(c) 34V − 47V
−
(d) 25V − 30V
Q23. For the given zener diode network, the range of load resistance R L that will
maintain output voltage to 10V be: ( VZ = 10V , I ZM = 32mA )
I
+
1k Ω IZ IL
V i = 50 V RL
(a) 250 Ω − 1.25 k Ω (b) 350 Ω − 1.50 k Ω

(c) 150 Ω − 1.20 k Ω (d) 250 Ω − 1.50 k Ω

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Q24. In the following circuit, the voltage across and the current through the 5 kΩ
resistance are 500Ω 1kΩ
30V 20V 10V 5kΩ
(a) 20V , 4 mA (b) 20V , 5 mA

(c) 10V , 2 mA (d) 10V , 5 mA
Q25. The voltage regulator circuit shown in the figure has been made with a Zener diode
rated at 15V , 200mW . It is required that the circuit should dissipate 150mW power
across the fixed load resistor RL .
238Ω
Vi RL Vo
For stable operation of this circuit, the input voltage Vi must have a range
(a) 17.5 V − 20.5 V (b) 15.5 V − 20.5 V

(c) 15.5 V − 22.5 V (d) 17.5 V − 22.5 V

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Numerical Answer Type (NAT)

Q26. The magnitude of output voltage Vo for the circuit as given below is…… Volts
E 1 = 10 V VO
4 .7 k Ω Si
2 .2 k Ω
E 2 = − 5V
Q27. The current I for the network shown in the figure given below is .......mA
2 .2 k Ω Si
20 V 4V
I
Si
Q28. An a.c. voltage of 220 V , 50 Hz is applied to the primary of a 5 :1 step down

transformer. The secondary of the transformer is bridge type and connected to a full wave
rectifier with a load resistance 500 Ω . Forward resistance of the diode is 50 Ω , then the
output d.c. voltage is………… Volts
1kΩ
Q29. A zener diode network is shown in the
figure given below. The power dissipated by IZ
the zener diode is ...........mW 16V VZ = 10V 3kΩ
500 Ω
Q30. A variable power supply ( 5 V − 20 V )
is connected to a Zener diode specified by a
breakdown voltage of 10 V (see figure). The
5V − 20 V 1 kΩ
ratio of the maximum power to the minimum
power dissipated across the load resistor is
…………

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Multiple Select Questions (MSQ)
Q31. Consider the following statements regarding the magnitude of barrier potential of a
p − n junction. Which of the statements given below are correct?
(a) It is independent of temperature
(b) It depends on difference between Fermi levels on two sides of junction
(c) It depends on forbidden energy gap on two types of semiconductors
(d) It depends on impurity concentration in p and n type semiconductors
Q32. Consider the following statements about Avalanche diodes

(a) Multiplication occurs due to carrier collision with the atoms
(b) Multiplication occurs due to direct breaking of covalent bonds
(c) It is lightly doped p − n junction diode
(d) On increasing temperature breakdown voltage increases
Which of the statements given above are correct?
Q33. Which of the following statements are not correct?

(a) Barrier potential increases by 2.5 mV per degree rise in temperature
(b) Reverse current in Si diode is 1000 times more than in Ge diode
(c) Reverse saturation current is independent of magnitude of reverse bias
(d) Reverse saturation current increases with increase in temperature

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Q34. Pick the correct statements based on the circuit shown below:
I R S = 1 kΩ IL
Vin
15 - 25 V
RL
VZ = 10V
IZ
(a) The maximum Zener current I Z ,max , when R L = 10kΩ is 14mA .
(b) The minimum Zener current I Z ,min , when R L = 10kΩ is 4mA .
(c) With Vin = 20V , I L = I Z , when R L = 2kΩ .
(d)The power dissipated across the Zener when R L = 10kΩ and Vin = 20V is 100mW .

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Solution
MCQ
Ans.1: (a)
Ans.2: (c)
Ans.3: (c)
Ans.4: (b)
Ans.5: (a)
Let current through 12 kΩ is I and through diode is I D
Then 0 .7 + I D × 3 .3 = ( I − I D ) × 6 (1)
and − 24 + I × 12 + (I − I D ) × 6 = 0 (2)
5 2
From (1) and (2) I D ≈ 1mA. , I ≈ mA. ⇒ I − I D ≈ mA ≈ 0.7 mA .
3 3
Ans.6: (c)
12
Diode D1 is OFF and diode D2 is ON. Thus I = = 2.00 A
4+2
Ans.7: (b)
10 − 0.7 I
Total current I = = 28mA ⇒ I D1 = I D2 = = 14mA
0.33 2
Ans.8: (b) ( )
−10 + vD2 + 2vD ×1 + vD = 0 ⇒ vD = 2V ⇒ iD = 2 A
Ans.9: (c)
2Vm
RL 10
Ans.10: (d) I av = = mA
π π
Ans.11: (c)
VPmax N P 10
VPrms = 220 V ⇒ VPmax = 220 2 V ; = = ⇒ VSmax = 22 2 V
VSmax NS 1
I VSmax
I dc = max = = 4.7 mA ⇒ Vdc = I dc RL = 9.4 V
π (
π RL + r f )
PIV = VSmax = 22 2 V = 31V

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Ans.12: (c)
VPmax NP 5
VSmax NS 1
⎛V ⎞
2 ⎜ Smax ⎟
2I 2Vmax 2 ⎠ 62
I dc = max = = ⎝ = = 0.036 mA
π π RL + r f( π RL + r f) ( )
π ( 500 + 50 )
⇒ Vdc = I dc RL = .036 × 500 = 18 V and PIV = 2Vmax = VSmax = 44 2 V = 62 V
Ans.13: (c)
Ans.14: (d)
Ans.15: (a)
Ans.16: (b)
Ans.17: (b)
Ans.18: (b)
Ans.19: (c)
Ans.20: (d)
1.2 ×16
Open circuit voltage Vi = = 8.7V < VZ . So zener diode is OFF and PZ = 0 .
1 + 1.2
Ans.21: (c)
Vmax − VZ VL 40 − 10 10
I Z ,max = I max − I L = − = − = 25 mA
R RL 1 2
Vmin − VZ VL 20 − 10 10
I Z ,min = I min − I L = + = − = 5 mA
R RL 1 2
Ans.22: (a)
(R + RL )VZ (220 + 1200) × 20 = 23.6V
Vimin = =
RL 1200
VZ 20
IL = = = 16.6V , I Rmax = I ZM + I L = 60 + 16.6 = 76.6 mA .
RL 1200
Vimax = I Rmax R + VZ = 76.6 × 0.22 + 20 = 37 V .

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Ans.23: (a)
RLmin × 50
R Lmin = = 10 ⇒ RLmin = 250 Ω .
1kΩ + RLmin
10 50 − 10 10
R Lmax = where I Lmin = I R _ I ZM = − 32 = 8 mA ⇒ RLmax = = 1.25 kΩ .
I Lmin 1 8
Ans.24: (c)
Ans.25: (a)
40
Since VZ = 15V and PZM = 200mW ⇒ I ZM = mA .
3
VZ2 225
PL = 150mW ⇒ 150mW = ⇒ RL = = 1.5kΩ
RL 150
(R + RL )VZ (238 + 1500) × 15 = 17.3 V

Vimin = =
RL 1500
VZ 15
IL = = = 10 mA, I Rmax = I ZM + I L = 23.33 mA, Vimax = I Rmax R + VZ = 20.5 V .
RL 1500

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NAT
Ans.26: 0.45
Under given biasing condition diode is ON. Let current through 4.7kΩ resistance is I.
Apply KVL in the input section,
−10 + I × 4.7 k + 0.7 + I × 2.2k − 5 = 0 ⇒ I = 2.07mA
And thus V0 = 2.07 × 2.2 − 5 = −0.45V
Ans.27: 7
Diode D1 is ON and diode D2 is OFF.
Apply KVL, −20 + I × 2.2k + 0.7 + 4 = 0 ⇒ I = 7 mA
Ans.28: 36
VPmax NP 5
VSmax NS 1
2 I max 2Vmax 2VSmax 124

I dc = = = = = 0.072 mA
π (
π RL + r f ) (
π RL + r f ) π ( 500 + 50 )
⇒ Vdc = I dc RL = .072 × 500 = 36 V
Ans.29: 27
3 × 16
Open circuit voltage Vi = = 12V > VZ .
1+ 3
So zener diode is ON ⇒ V L = VZ = 10V and V R = 6V .
VL
IL = = 3.3 mA, I R = 6 mA ⇒ I Z = 6 − 3.3 = 2.7 mA ⇒ PZ = VZ I Z = 27 mW
RL

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Ans.30: 9.2
1000
When V = 5V ⇒ open circuit voltage Vi = × 5 = 3.33 < VZ = 10V
1500
Vi 2
⇒ VL = Vi = 3.33V ⇒ PL ,min = .
RL
1000
When V = 20V ⇒ open circuit voltage Vi = × 20 = 13.33 > VZ = 10V
1500
VZ2
⇒ VL = V z = 10V ⇒ PL ,max =
RL
2
PL ,max VZ2 ⎛ 10 ⎞
⇒ = =⎜ ⎟ = 9.2
PL ,min Vi 2 ⎝ 3.33 ⎠
MSQ
Ans.31: (b), (c) and (d)

Ans.32: (a), (c) and (d)
Ans.33: (a), (b) and (d)
Ans.34: (a), (b) and (c)
Vmax − VZ VL 25 − 10 10
(a) I Z ,max = I max − I L = − = − = 14mA
R RL 1 10
Vmin − VZ VL 15 − 10 10
(b) I Z ,min = I min − I L = − = − = 4mA
R RL 1 10
10 20 − 10
(c) Vin = 20V , I L = = 5mA, I Z = − 5 = 5mA ⇒ I L = I z
2 1
10 20 − 10
(d) Vin = 20V , I L = = 1mA, I Z = − 1 = 9mA ⇒ PZ = VZ I Z = 10 × 9 = 90mW
10 1

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3. Bipolar Junction Transistors
3.1 Transistor Construction

Transistor is a three-layer semiconductor device consisting of either two n- and one
p-type layer of material or two p- and one n-type layers of material. The former is called
npn transistor, while latter is called an pnp transistor. Both are shown in figure 3.1 with
proper biasing.
E p p C E C
• n • • n p n •
• •
B B
V EE V CC V EE V CC
(a ) (b )
Figure 3.1: Types of transistors: (a) pnp (b) npn.
The emitter layer is heavily doped, the base lightly doped, and the collector only lightly
doped. The outer layers have widths much greater than the sandwiched p- or n-type
material. The ratio of the total width to that of the center layer is 150:1. The doping of the
sandwiched layer is also considerably less than that of the outer layer (typically, 10:1 or
less).This lower doping level decreases the conductivity (increases the resistance) of this
material by limiting the number of “free” carriers.
The terminals have been indicated by the capital letters E for emitter, C for collector, and
B for base. The term bipolar junction transistor (BJT) reflects the fact that holes and
electrons participate in the injection process into the oppositely polarized material.

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3.2 Transistor Operation

The basic operation of the transistor is described using pnp transistor as shown in
figure 3.1(a). The operation of the npn transistor is exactly the same if the roles played
by the electron and holes are interchanged. In figure 3.2 the pnp transistor has been
redrawn without the base-to-collector bias (similar to forward-biased diode). The
depletion region has been reduced in width due to applied bias, resulting in a heavy flow
of majority carriers from p- to the n-type material.
+ Majority carriers
+ + −+ −
+ +−
E + +p − −+ n
• •
+ − + + +−
−
•
Depletion region B
+ −
• • •
V EE
Figure 3.2: Forward-biased junction of a pnp transistor.
Let us now remove the base-to-emitter bias of the pnp transistor of figure 3.1(a) as shown
in figure 3.3 (similar to reverse-biased diode). Recall that the flow of majority carriers is
zero, resulting in only a minority-carrier flow. Thus
“One p-n junction of a transistor is reversed biased, while the other is forward biased.”
+
Minority carriers
− + + −
+
− + + C
• n + p− •
−
+− + −+ +
•
B
Depletion region
• • •
+ −
V CC
Figure 3.3: Reverse based junction of a pnp transistor.

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In figure 3.4 both biasing potentials have been applied to a pnp transistor, with the
resulting majority and minority-carrier flow indicated. The widths of the depletion
regions, indicating clearly which junction is forward-biased and which is reversed-biased.
A large number of majority carriers will diffuse across the forward-biased p-n junction
into the n-type material. Since n-type material is very thin and has low conductivity, a
very small number of these carriers will take this path of high resistance to the base
terminal. The larger number of these majority carriers will diffuse across the reverse-
biased junction into the p-type material connected to the collector terminal. Thus there
has been an injection of minority carriers into the n-type base region material.
Combining this with the fact that all the minority carriers in the depletion region will
cross the reversed-biased junction of a diode accounts for the flow indicated in the
figure 3.4.
+
Majority carriers +
Minority carriers
p n p
IE I CO IC
E C
• •
•
B
Depletion region
IB
V EE V CC
Figure 3.4: Majority and minority carrier flow of a pnp transistor.
Applying Kirchhoff’s current law to the transistor of figure 3.4 as if it were a single node,
we obtain
I E = IC +I B
The minority current component is called the leakage current and is given by the symbol
I CO (collector current with emitter terminal open). The collector current, therefore is:
I C = I Cmajority + I COminority

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3.3 Transistor Configurations

3.3.1 Common-Base Configuration
The common-base configuration with pnp and npn transistors are shown in figure 3.5.
The common-base terminology is derived from the fact that the base is common to both
the input and output sides of the configurations.
IE IC
E C IE IC
• p n p •
E C
•
B
IB IB
+ − + −
•
V CC B
V EE
3.5(a) : pnp
IE IC IE IC
E n p n C
• • E C
•
B
IB
IB
− + − +
•
B
V EE V CC
3.5(b) : npn
Figure 3.5: Notation and symbols used with the common base-configuration:
(a) pnp transistor; (b) npn transistor.

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To fully describe the behavior of a three terminal device such as common base amplifiers
requires two set of characteristics- one for the driving point or input parameters and the
other for the output side.
Input Characteristics
The input set for the common base amplifiers as shown in figure 3.6 will relate an input
current ( I E ) to an input voltage ( V BE ) for various levels of output voltage ( VCB ).
I E (mA )
VCB = 20 V
8 VCB = 10 V
7
6 VCB = 1V
5
4
3
2
1
0 0. 2 0. 4 0. 6 0 .8 1.0 VBE (V )
Figure 3.6: Input or driving point characteristics for a common-base silicon transistor.
Output Characteristics
The output set will relate an output current ( I C ) to an output voltage ( VCB ) for various
levels of input current ( I E ). The output characteristics have three basic regions of
interest: the active, cutoff, and saturation regions. The active region is the region
normally employed for linear (undistorted) amplifiers.
In the active region the collector-base junction is reversed-biased, while the base-emitter
junction is forward biased.

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I C (mA)
Active region (unshaded area)
7 7 mA
6 6 mA
5 5 mA
4 4 mA
3 3 mA
2 2 mA
I = 1 mA
1 E
I = 0 mA
0 E
0 5 10 15 20 VCB (V )
cutoff region
Figure 3.7: Output or collector characteristics for a common-base transistor amplifier.

The circuit condition that exists when I E = 0 for common base configuration is shown in
figure 3.8. Note that I CBO is temperature dependent and increases so rapidly with
temperature.
In the output characteristics as the
E C
emitter current increases above zero, • •
IE = 0
the collector current increases to a I CBO = I CO
magnitude essentially equal to that of
B
the emitter current as determined by the
Figure 3.8: Reverse Saturation current.
basic transistor current relations. Note
also the almost negligible effect of VCB on the collector current for the active region.
In the cutoff region the collector-base and base-emitter junctions are both reversed-
biased.
In the saturation region the collector-base and base-emitter junctions are both forward-
biased.

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Alpha ( α )
In the dc mode the levels of I C and I E due to majority carriers are related by a quantity
called alpha and defined by the following equations:

IC
α dc = where I C and I E are the levels of current at the point of operation.
IE
Thus I C = I Cmajority + I COminority ⇒ I C = α I E + I CBO
For ac situations where the point of operation moves on the characteristics curve, an ac
ΔI C
alpha is defined by α ac = .
ΔI E VCB = constant
The ac alpha is formally called the common-base, short-circuit, amplification factor.
The typical values of voltage amplification ⎛⎜ ⎞ for the common-base configuration

Vo
⎝ Vi ⎟⎠
vary from 50 to 300. The current amplification ⎛⎜ C ⎞⎟ is always less than 1 for the
I
⎝ IE ⎠
common-base configuration.

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3.3.2 Common Emitter Configuration

The common-emitter configuration with pnp and npn transistors are shown in figure 3.9.
The common-emitter terminology is derived from the fact that the emitter is common to
both the input and output sides of the configurations.
IC IC
C CC
• •
IB nn IB np
• p • n VCC
B
B VCC B
B
nn np
• V BB •
V BB E EE
IE IE
IC IC
C C
IB IB
B B
IE IE
E E
(a) n-p-n (b) p-n-p
Figure 3.9: Notation and symbols used with the common-emitter configuration.
To fully describe the behavior of a three terminal device such as common emitter
amplifier requires two set of characteristics- one for the input or base-emitter circuit and
one for the output or collector-emitter circuit.
The output characteristics will relate an output current ( I C ) to an output voltage ( VCE )
for various levels of input current ( I B ). The input characteristics for the common emitter
amplifiers will relate an input current ( I B ) to an input voltage ( VBE ) for various levels of
output voltage ( VCE ).

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In the active region the collector-base junction is reversed-biased, while the base-emitter
junction is forward biased.
In the cutoff region the collector-base and base-emitter junctions are both reversed-
biased.
In the saturation region the collector-base and base-emitter junctions are both forward-
biased.
I C ( mA) 60 μA
20 50 μA
40 μA
15
IB V C E = 10 V
Saturation 30 μA
V C E = 20 V
10
20 μA
10 μA
5
I B = 0 μA
A
0•
0 .7 V V BE
5 10 15 20 VCE (V )
VCE sat
cutoff (b )
(a ) VCEmax
Figure 3.10: Characteristics of a silicon transistor in the common emitter
configuration: (a) Collector characteristics; (b) base characteristics.
αI B I CBO
Since I C = αI E + I CBO = α ( I C + I B ) + I CBO ⇒ I C = +
1−α 1−α
I CBO α
or I C = βI B + I CEO where I CEO = and β = .
1−α I B =0 1−α
C
B
• •
IB = 0 I CEO
B
Figure 3.11: Circuit condition related to I CEO .

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Beta ( β )
In the dc mode the levels of I C and I B are related by a quantity called beta and defined
IC
by the following equations: β dc = where I C and I B are the levels of current at the
IB
point of operation. For ac situations where the point of operation moves on the
ΔI C
characteristics curve, an ac beta is defined by β ac = . The formal name for
ΔI B VCE = constant
β ac is common emitter forward-current amplification factor.

3.3.3 Common-Collector Configuration
The third and final transistor configuration is the common–collector configuration, shown
in figure 3.12 with the proper current directions and voltage notation. The common-
collector configuration is used primarily for impedance-matching purposes since it has a
high input impedance and low output impedance, opposite to that of the common-base
and common-emitter configurations.
IE IE
•
E •
E
IB p IB n
• n • p VEE
B V EE B
p n
• V BB C•
V BB C
IC IC
• •
IE IE
E E
IB IB
B B
IC IC
C (a ) C (b )
Figure 3.12: Notation and symbols used with the common-collector configuration.

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A common collector circuit configuration is

provided in figure 3.13 with the load C
resistor connected from emitter to ground.

B
Note that the collector is tied to ground
even though the transistor is connected in a
E
manner similar to the common emitter R
configuration. For all practical purposes,
the output characteristics of the CC
Figure 3.13: Common-collector configuration.
configuration are same as for the CE
configuration.
3.4 DC Biasing-BJTs
3.4.1 Introduction
The analysis or design of a transistor amplifier requires knowledge of both the dc and ac
response of the system. The improved output ac power level is the result of a transfer of
energy from the applied dc supplies. The analysis or design of any electronic amplifier,
therefore, has two components: the dc portion and the ac portion. Fortunately, the
superposition theorem is applicable and the investigation of the dc conditions can be
totally separated from the ac response. However, one must keep in mind that during the
design stage the choice of parameters for the required dc levels will affect the ac response
and vice-versa.
The dc level of operation of a transistor is controlled by a number of factors, including
the range of possible operating points on the device characteristics. Each design will also
determine the stability of the system, that is, how sensitive the system is to temperature
variations.
Although a number of networks will be analyzed, there is an underlying similarly
between the analysis of each configuration due to the recurring use of the following
important basic relationships for a transistor:
VBE = 0.7 V , I E = ( β + 1) I B ≅ I C and I C = β I B

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3.4.2 Operating Point

Since the operating point is a fixed point on the characteristics it is also called the
quiescent point (abbreviated Q-point). By definition, quiescent means quiet, still,
inactive. Figure 3.14 shows a general output device characteristic with four operating
points indicated. The biasing circuit can be designed to set the device operation at any of
these points or others within the active region. The maximum ratings are indicated on the
characteristics by a horizontal line for the maximum collector current I Cmax and a vertical
line at the maximum collector-to-emitter voltage VCEmax . The maximum power constraint
is defined by the curve PCmax in the same figure. At the lower end of the scales are the
cutoff regions, defined by I B ≤ 0 μ A and the saturation region, defined by VCE ≤ VCEsat .
I C ( mA) 80 μA
I Cmax 25 70 μA
60 μA
20 50 μA
PC max
40 μA
15
Saturation B 30 μA
•
10
D 20 μA
•
C 10 μA
5 •
I B = 0 μA
A
•
0 5 10 15 20 VCE (V )
VCE sat
cutoff
VCEmax
Figure 3.14: Various operating points within the limits of operation of a transistor.

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If no bias were used, the device would initially be completely off, resulting in a Q-point
at A-namely zero current through the device (and zero voltage across it). Since it is
necessary to bias a device so that it can respond to the entire range of an input signal
point A would not be suitable. For point B if a signal is applied to the circuit, the device
will vary in current and voltage from operating point, allowing the device to react to both
the positive and negative excursion of the input signal. If the input signal is properly
chosen, the voltage and current of the device will vary but not enough to drive the device
into cutoff or saturation. Point C would allow some positive and negative variation of the
output signal but the peak-to-peak value would be limited by the proximity of VCE = 0 V ,
I C = 0 mA . Operating at point C also raise some concern about the nonlinearities
introduced by the fact that the spacing between I B curves is rapidly changing in this
region.
In general, it is preferable to operate where the gain of the device is fairly constant (or
linear) to ensure that the amplification over the entire swing of input signal is the same.
Point D sets the device operating point near the maximum voltage and power level. The
output voltage swing in the positive direction is thus limited if the maximum voltage is
not to be exceeded. Point B is a region of more linear spacing and therefore, seems the
best operating point in terms of linear gain and largest possible voltage and current
swing. This is usually the desired condition for small-signal amplifiers but not the case
necessarily for power amplifiers. In this discussion, we will be concentrating primarily on
biasing the transistor for small-signal amplification operation.
Having selected and biased the BJT at a desired operating point, the effect of temperature
must also be taken into account. Temperature causes the device parameters such as the
transistor current gain ( β ac ) and the transistor leakage current ( I CEO ) to change. Higher
temperatures result in increased leakage currents in the device, thereby changing the
operating condition set by the biasing network. The result is that the network design must
also provide a degree of temperature stability so that temperature changes result in
minimum changes in the operating point. This maintenance of the operating point can be

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specified by a stability factor, S, which indicates the degree of change in operating point
due to a temperature variation. A highly stable circuit is desirable and the stability of a
few basic bias circuits will be compared.
For the BJT to be biased in its linear or active operating region the following must be
true:
1. The base-emitter junction must be forward-biased (p-region voltage more
positive) with a resulting forward-bias voltage of about 0.6 to 0.7 V.
2. The base-collector junction must be reverse-biased (n-region more positive), with
the reverse-bias voltage being any value within the maximum limits of the device.
Operation in the cutoff, saturation and linear regions of the BJT characteristic are
provided as follows:
1. Linear-region operation:
Base-emitter junction forward biased
Base-collector junction reversed biased
2. Cutoff-region operation:
Base-emitter junction reverse biased
Base-collector junction reversed biased
3. Saturation-region operation:
Base-emitter junction forward biased
Base-collector junction forward biased

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3.5 Fixed-Bias Circuit

The fixed-bias circuit of figure 3.15 provides a relatively straightforward and simple
introduction to transistor dc bias analysis. Even though the network employs an npn
transistor, the equations and calculations apply equally well to a pnp transistor
configuration merely by changing all current directions and the voltage polarities.
VCC
RC IC
ac
RB
• output
C C2 signal
ac IB +
input • VCE
C1 B+
signal −
VBE − E
Figure 3.15: Fixed-bias circuit
For the dc analysis the network can be VCC VCC
isolated from the indicated ac levels by

RC IC
replacing the capacitors with an open-
RB
circuit equivalent. In addition, the dc
supply VCC can be separated into two C
IB +
supplies (for analysis purposes only) as
VCE
shown in figure 3.16 to permit a separation B+
VBE −
of input and output circuits. It also reduces − E
the linkage between the two to the base

Figure 3.16: DC equivalent of figure 3.15.
current I B .

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3.5.1 Q-Point
Forward Bias of Base-Emitter
Consider first the base-emitter circuit loop of
figure shown 3.17. Writing Kirchhoff’s voltage +
equation in the clockwise direction for the loop, we RB
obtain −VCC + I B RB + VBE = 0 + −

VCC
− +
Note the polarity of the voltage drop across RB as IB
VBE
established by the indicated direction of IB. Solving
−
the equation for the current IB will result in the
Figure 3.17: Base-emitter loop.
V − V BE
following: I B = CC
RB
Since the supply voltage VCC and the base-emitter voltage VBE are constants, the selection
of a base resistor, RB sets the level of base current for the operating point.
Collector-Emitter Loop
+
The collector-emitter section of the network
RC IC
appears in figure 3.18 with the indicated
−
direction of current I C and the resulting • +
+ VCC
polarity across RC . −
The magnitude of the collector current is VCE
related directly to I B through
IC = β I B −
It is interesting to note that since the base Figure 3.18: Collector-emitter loop.
current is controlled by the level of RB and I C is related to I B by a constant β the
magnitude of I C is not a function of the resistance RC . Change RC to any level and it will
not affect the level of I B or I C as long as we remain in the active region of the device.
However, as we shall see, the level of RC will determine the magnitude of VCE , which is
an important parameter.
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Applying Kirchhoff’s voltage law in the clockwise direction around the indicated closed-
loop of figure 3.18 will result in the following: VCC VC
−VCC + I C RC + VCE = 0 ⇒ VCE = VCC − I C RC

As a brief review of single and double subscript RC + −
notation recall that VCE

C
VCE = VC − VE
where VCE is the voltage from collector to emitter + −
and VC and VE are the voltages from collector and

E
emitter to ground respectively. But in this case
since VE = 0 V , we have
Figure 3.19: Measuring VCE and VC .
VCE = VC .
In addition, since VBE = VB − VE and VE = 0 V then VBE = VB .
Keep in mind that voltage levels such as VCE are determined by placing the positive lead
of the voltmeter at the collector terminal with the negative lead at the emitter terminal as
shown in figure 3.19. VC is the voltage from collector to ground and is measured as
shown in the same figure. In this case the two readings are identical, but in the networks
to follow the two can be quite different.
The term saturation is applied to any system where levels have reached their maximum
values. For a transistor operating in the saturation region the current is a maximum value
for the particular design. Change the design and the corresponding saturation level may
rise or drop.
Saturation conditions are normally avoided because the base-collector junction is no
longer reverse-biased and the output amplified signal will be distorted. An operating
point in the saturation region is depicted in figure 3.20. Note that it is in a region where
the characteristic curves join and the collector-to-emitter voltage is at or below VCEsat . In
addition, the collector current is relatively high on the characteristics.

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If we approximate the curves of figure 3.20(a) by those appearing in figure 3.20(b), a

quick direct method for determining the saturation level becomes apparent. In figure
3.20(b) the current is relatively high and the voltage VCE is assumed to be zero volts.
Applying Ohm’s law the resistance between collector and emitter terminals can be
VCE 0V
determined as follows: RCE = = = 0Ω
IC IC I Csat IC
I C sat Q − point I C sat Q − point
0 V VCE 0 VCE
CEsat
(a ) (b )
Figure 3.20: Saturation region (a) actual (b) approximate.
For saturation current set VCE = 0 V and find I Csat . For the fixed-bias configuration of
figure 3.22 the short circuit has been applied, causing the voltage across RC to be the
applied voltage VCC . The resulting saturation current for the fixed-bias configuration is
VCC
I Csat =
RC
I Csat • VCC
C +
RC VRC = VCC
RCE = 0Ω
RB −
I C sat +
(VCE = 0 V , I C = I Csat )
E VCE = 0V
Figure 3.21: Determining I Csat −
Figure 3.22: I Csat for the fixed-bias configuration.

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We will now investigate how the network parameters define the possible range of
Q-points and how the actual Q-point is determined.
I C ( mΑ ) 50 μΑ
8
• VCC 7 40 μΑ
+ IC
6 30 μΑ
RC
RB − 5
4 20 μΑ
+
3 10 μΑ
VCE 2
I B = 0 μΑ
IB 1
−
0 5 10 15 VCE (V )
(a )
I CEO
(b )
Figure 3.23: Load-line analysis (a) the network (b) the device characteristics.
The network of figure 3.23(a) establishes
IC
an output equation that relates the
VCC
variables I C and VCE in the following •
RC
manner: VCE = VCC − I C RC
The output characteristics of the transistor Q − point
• I BQ
also relate the same two variables I C and VCE = 0 V
VCE in figure 3.23(b). Load line

We must now superimpose the straight
•
line defined by equation VCE = VCC − I C RC 0 VCE
VCC
on the characteristics. If we choose I C to I C = 0 mA
be 0 mA , we are specifying the horizontal Figure 3.24: Fixed-bias load.
axis as the line on which one point is

located. By substituting I C = 0 mA , we find that VCE = VCC I C = 0 mΑ
defining one point for
the straight line as shown in figure 3.24.

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If we now choose VCE to be 0 V , which establishes the vertical axis as the line on which
the second point will be defined, we find that I C is determined by the following equation:
VCC
0 = VCC − I C RC and I C = as appearing on figure 3.24.
RC VCE = 0 V
VCC
By joining the two points defined by equation VCE = VCC IC =0 m Α
and I C = the
RC VCE = 0 V
straight line established by equation VCE = VCC − I C RC can be drawn. The resulting line on
the graph of figure 3.24 is called the load line since it is defined by the load resistor RC .
By solving for the resulting level of I B the actual Q-point can be established.
If the level of I B is changed by varying the value of RB the Q-point moves up or down
the load line as shown in figure 3.25.
IC
VCC
•
RC
Q − point
• I B3
Q − point
• I B2
Q − point
• I B1
•
VCC VCE
Figure 3.25: Movement of Q-point with increasing levels of IB.
NOTE: For Fixed RB if temperature of the device increases the Q-point will moves
towards the saturation region as shown in figure 3.25. Since I C = β I B + I CEO with
increase in temperature reverse current I CEO = ( β + ) I CBO increases.

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If VCC is held fixed and RC changed, the load line will shift as shown in figure 3.26. If
I B is held fixed, the Q-point will move as shown in the same figure.
IC
•
VCC
RC
• R3 > R2 > R1
• Q − point
Q − point Q − point
• • • I BQ
•
VCC VCE
Figure 3.26: Effect of increasing levels of RC on the load line and Q-point.
If RC is fixed and VCC varied, the load line shifts as shown in figure 3.27.
IC
VCC1 •
RC
VCC1 > VCC 2 > VCC3
VCC 2
•
RC
VCC3 • Q − point Q − point Q − point I BQ
• • •
RC
• • •
VCC3 VCC 2 VCC1 VCE
Figure 3.27: Effect of lower values of VCC on the load line and Q-point.

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VCC = +12 V
Example: Determine the
following for the fixed-bias
•
configuration of figure
shown below. RC
RB IC 2.2kΩ
(a) I BQ and I CQ C2
240 kΩ •
ac
+ Output
(b) VCEQ 10 μF
C1 IB
(c) VB and VC ac
• VCE
Input β = 50
(d) VBC 10 μF
(e) Saturation level. −

Solution:
VCC − VBE 12 V − 0.7 V
(a) I BQ = = = 47.08 μ A
RB 240 kΩ
I CQ = β I BQ = (50 )(47.08 μΑ ) = 2.35 mΑ
(b) VCEQ = VCC − I C RC = (12 )( 2.35 mA )( 2.2 k Ω ) = 6.83 V
(c) VB = VBE = 0.7 V
VC = VCE = 6.83 V
(d) Using double-subscript notation yields
VBC = VB − VC = 0.7 V − 6.83 V = −6.13 V
With the negative sign revealing that the junction is reversed-biased, as it should be for
linear amplification.
VCC 12 V
(e) I csat = = = 5.45 mΑ
RC 2.2 kΩ
I CQ = 2.35 mΑ , which is far from the saturation level and about one-half the maximum
value for the design.

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3.6 Emitter-Stabilized Bias Circuit

The dc bias network of figure 3.28 contains an emitter resistor to improve the stability
level over that of the fixed-bias configuration.
VCC
•
IC
RC
RB • vo
C2
IB
vi •
C1
IE
RE
Figure 3.28: BJT circuit with emitter resistor.

3.6.1 Q-Point
The analysis will be performed by first examining the base-emitter loop and then using
the results to investigate the collector-emitter loop.
Base–Emitter Loop
The base-emitter loop of the network can be redrawn as
+
shown in 3.29. Writing Kirchhoff’s voltage law around the RB IB
indicated loop in the clockwise direction will result in the −B
following equation: VCC +
VBE
−VCC + I B RB + VBE + I E RE = 0
− E
+
VCC − I B RB − VBE − ( β + 1) I B RE = 0 ∵ I E = ( β + 1) I B IE
RE −
•
Grouping terms will then provide the following:
VCC − VBE
IB = . Figure 3.29: Base-emitter loop.
RB + (β + 1)RE
Note that the only difference between this equation for I B and that obtained for the fixed-
bias configuration is the term ( β + 1) RE .

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VCC − VBE
There is an interesting result that can be derived from equation I B = if
RB + (β + 1)RE
the equation is used to sketch a series network that would result in the same equation.
Such is the case for the network of figure 3.30. Solving for the current I B will result in
the same equation obtained above. Note that aside from the base-to-emitter voltage VBE
the resistor RE is reflected back to the input base circuit by a factor ( β + 1) . In other
words, the emitter resistor, which is part of the collector–emitter loop, “appears as”
( β + 1) RE in the base-emitter loop. Since β is typically 50 or more, the emitter resistor
appears to be a great deal larger in the base circuit.
IB
RB
B
β
VBE
VCC
•
Ri = (β + 1)RE
(β + 1)RE RE
•
Figure 3.30: Network derived from I B . Figure 3.31: Reflected impedance level of RE .
In general, therefore, for the configuration of figure 3.31,

Ri = ( β + 1) RE
This equation is one that will prove useful in the analysis to follow. In fact, it provides a
VCC − VBE
fairly easy way to remember equation IB = . Using Ohm’s law, we
RB + (β + 1)RE
know that the current through a system is the voltage divided by the resistance of the
circuit. For the base-emitter circuit the net voltage is VCC − VBE . The resistance levels are
RB plus RE reflected by ( β + 1) .

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Collector–Emitter Loop
The collector-emitter loop is redrawn in figure 3.32.
Writing Kirchhoff’s voltage law for the indicated +
loop in the clockwise direction will result in RC IC
−
I E RE + VCE + I C RC − VCC = 0 + +
Substituting I C ≈ I E and grouping terms gives VCE VCC
−
−
VCE = VCC − I C ( RC + RE ) +
RE IE
The single-subscript voltage VE is the voltage from
−
emitter to ground and is determined by
Figure 3.32: Collector-emitter loop.
VE = I E RE
while the voltage from collector to ground can be determined from
VCE = VC − VE or VC = VCE + VE and VC = VCC − I C RC
The voltage at the base with respect to ground can be determined from
VB = VCC − I B RB or VB = VBE + VE
3.6.2 Saturation Level

VCC
The collector saturation level or maximum
RC
collector current for an emitter-bias design can be
determined using the same approach applied to
the fixed-bias configuration: I Csat
VCC VCE = 0 V
I Csat =
RC + RE
The addition of the emitter resistor reduces the RE
collector saturation level below that obtained
with a fixed-bias configuration using the same
Figure 3.33: Determining I Csat for
collector resistor.
the emitter-stabilized bias circuit.

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The load-line analysis of the emitter-bias network is only slightly different from that
encountered for the fixed-bias configuration. The level of IB as determined by equation
VCC − VBE
IB = defines the level of IB on the characteristics of figure 3.34
RB + (β + 1)RE
(denoted I BQ ).
IC
VCC
•
RC + R E
Q − point
• I BQ
•
VCC VCE
Figure 3.34: Load-Line for the emitter-bias configuration.
The collector-emitter loop equation that defines the load line is the following:
VCE = VCC − I C ( RC + RE )
VCE = VCC I C =0 V
as obtained for the fixed-bias configuration. Choosing VCE = 0 V gives
VCC
IC =
RC + RE VCE = 0 V
as shown in figure 3.34. Different levels of I BQ will, of course, move the Q-point up or
down the load line.

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Example: For the emitter bias

network of figure shown below, + 20 V
determine: •
(a) I B
2 kΩ
430 kΩ
(b) I C • vo
10 μF
(c) VCE 10 μF
vi • β = 50
(d) VC
(e) VE •
(f) VB 1 kΩ 40μ F
(g) VBC
(h) I Csat
Solution:
VCC − VBE 20 V − 0.7 V 19.3 V
(a) I B = = = = 40.1 μ A
RB + (β + 1)RE 430 kΩ + (51)(1 kΩ ) 481 k Ω
(b) I C = β I B = ( 50 )( 40.1 μ A ) = 2.01 mA
(c) VCE = VCC − I C ( RC + RE ) = ( 20 ) − ( 2.01 mA )( 2k Ω + 1k Ω ) = 13.97 V
(d) VC = VCC − I C RC = ( 20 ) − ( 2.01 mA )( 2k Ω ) = 15.98 V
(e) VE = VC − VCE = 15.98 V − 13.97 V = 2.01 V
(f) VB = VBE + VE = 0.7 V + 2.01V = 2.71 V
(g) VBC = VB − VC = 2.71 V − 15.98V = −13.27 V (reverse-biased as required)
VCC 20 V 20 V
(h) I Csat = = = = 6.67 mA
RC + RE 2k Ω + 1 k Ω 3 k Ω
which is about twice the level of I CQ .

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3.7 Voltage-Divider Bias

In the previous bias
configurations the bias current V CC
•
I CQ and voltage VCEQ were a
function of the current gain (β) of R1 RC

C2
vo
the transistor. However, since β is
C1
temperature sensitive, specially v i
for silicon transistors, and the
actual value of beta is usually not R2 RE
well defined, it would be
•
desirable to develop a bias circuit
that is less dependent, or in fact,
Figure 3.35: Voltage-divider bias configuration.
independent of the transistor beta.
The voltage-divider bias configuration of figure 3.35 is such a network. If analyzed on
an exact basis the sensitivity to changes in beta is quite small.
3.7.1 Q-point
The input side of the network can be redrawn as shown in figure 3.36 for the dc analysis.
The Thevenin equivalent network for the network to the left of the base terminal can then
be found in the following manner.
R1 B
VCC R2 RE
Figure 3.36: Redrawing the input side of the network of figure 3.35.

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Thevenin’s Resistance ( RTh ) :
The voltage source is replaced by a short-circuit equivalent as shown in figure 3.37.
R1
RR
RTh = 1 2
R1 + R2 R2
RTh
Figure 3.37: Determining RTH .
Thevenin’s Voltage ( ETh ) :
The voltage source VCC is returned to the network and R1 + +
the open-circuit Thevenin voltage of figure 3.38 VCC R2 V R2 ETh

determined as follows:
− −
Applying the voltage-divider rule:
R2VCC
ETh = VR2 =
R1 + R2 Figure 3.38: Determining ETH .
The Thevenin network is then redrawn as

shown in figure 3.39 and I BQ can be
RTh B
determined by first applying Kirchhoff’s
+
voltage law in the clockwise direction for the IB VBE
− E
loop indicated: − ETh + I B RTh + VBE + I E RE = 0 ETh
ETh − VBE RE IE
IB = ∵ IE = ( β +) IB
RTh + (β + 1)RE
Once I B is known the remaining quantities of Figure 3.39: Thevenin equivalent circuit.
the network can be found in the same manner
as developed for the emitter-bias configuration. That is VCE = VCC − I C (RC + RE ) .
The remaining equations for VE , VC and VB are also the same as obtained for the emitter-
bias configuration.

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The output collector-emitter circuit for the voltage-divider configuration has the same
appearance as the emitter-biased circuit. The resulting equation for the saturation current
(when VCE is set to zero volts on the schematic) is therefore the same as obtained for the
VCC
emitter-biased configuration. That is, I Csat = I Cmax = .
RC + RE
The similarities with the output circuit of the emitter-biased configuration result in the
same intersections for the load line of the voltage-divider configuration. The load line
will therefore have the same appearance as that of figure 3.24, with
VCC
I Csat = and VCE = VCC
RC + RE VCE = 0V
I C =0 mΑ
The level of I B is of course determined by a different equation for the voltage-divider

bias and the emitter-bias configurations.
Example: Determine the dc bias voltage VCE and the current I C for the voltage-divider
+ 22 V
configuration of figure shown below.
Solution: RTH = R1 R2 =
( 39k Ω )( 3.9k Ω ) = 3.55 k Ω •
39k Ω + 3.9k Ω
ETh =
R2VCC
=
(3.9 kΩ )(22 V ) = 2V 10 kΩ
R1 + R2 39 kΩ + 3.9 kΩ 39 kΩ 10 μF
IC • vo
ETh − VBE 2V − 0.7V
IB = = +
RTh + (β + 1)RE 3.55 kΩ + (141)(1.5 kΩ ) 10 μF
vi • β = 140
1.3V
⇒ IB = = 6.05 μ A
3.55 k Ω + 211.5 k Ω −
•
⇒ I C = β I B = (140 )( 6.05 μ A ) = 0.85 mA 3.9 kΩ
1.5 kΩ 50μ F
∵VCE = VCC − I C ( RC + RE )
⇒ VCE = 22 − ( 0.85 mA )(10k Ω + 1.5k Ω ) = 12.22 V

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3.8 DC Bias with Voltage Feedback

An improved level of stability can also be obtained by introducing a feedback path from
collector to base as shown in figure 3.40. VCC
RC
I C′
vo
RB IC C2
IB +
vi • VCE
C1 −
IE
RE
Figure 3.40: DC Bias with voltage feedback.

3.8.1 Q-point (Base-Emitter Loop)
+
Figure 3.41 shows the base-emitter loop RC
for the voltage feedback configuration. − + − I C′
•
Writing Kirchhoff’s voltage law around RB IC
the indicated loop in the clockwise VCC IB
+
direction will result in
VBE
−VCC + I C′ RC + I B RB + VBE + I E RE = 0 − IE
+
It is important to note that the current RE
through RC is not IC but I C′ −
(where I C′ = I C + I B ≈ I C ). Thus Figure 3.41: Base-emitter loop for the network of Figure 3.40.
VCC − β I B RC − I B RB − VBE − β I B RE = 0
VCC − VBE
⇒ IB = .
RB + β ( RC + RE )
In general, therefore, the feedback path results in a reflection of the resistance RC back to
the input circuit, much like the reflection of RE .

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V'
In general, the equation for I B had the following format: I B = with the absence
RB + β R '
of R′ for the fixed-bias configuration, R′ = RE for the emitter-bias setup (with
( β + 1) ≅ β ), and R′ = RC + RE for the collector-feedback arrangement. The voltage V ′ is
the difference between two voltage levels.

βV '
⇒ I CQ = ∵ IC = β I B
RB + β R '
Collector-Emitter Loop
The collector-emitter loop for the network is I C′ +
provided in figure 3.42. Applying RC
Kirchhoff’s voltage law around the indicated •
−
loop in the clockwise direction will result in IC +
VCC
−VCC + I C′ RC + VCE + I E RE = 0 VCE
−VCC + I C ( RC + RE ) + VCE = 0 −
IE +
∵ I C′ = I C and I E = I C
RE
⇒ VCE = VCC − I C ( RC + RE ) −
which is exactly as obtained for the emitter-

Figure 3.42: Collector-emitter loop for the
bias and voltage-divider bias configurations. network of figure 3.40.
3.8.2 Saturation Conditions
Using the approximation I C′ = I C the equation for the saturation current is the same as
obtained for the voltage-divider and emitter-bias configurations. That is,
VCC
I Csat = I Cmax =
RC + RE
Continuing with the approximation I C′ = I C will result in the same load line defined for
the voltage-divider and emitter-biased configurations. The level of I BQ will be defined by
the chosen bias configuration.

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Example: Determine the quiescent levels of I CQ and VCEQ for the network of figure
shown below.
10 V
Solution:
VCC − VBE
IB =
RB + β (RC + RE ) 4 . 7 kΩ
10V − 0.7V
IB = 250 kΩ
250 k Ω + ( 90 )( 4.7 k Ω + 1.2 k Ω ) • vo
10 μF
9.3V 9.3V vi
IB = = • β = 90
25. k Ω + 531 k Ω 781 k Ω 10 μF
I B = 11.91 μ A
I CQ = β I B = ( 90 )(11.91μΑ ) = 1.07 mA 1.2 kΩ

∵VCEQ = VCC − I C ( RC + RE )
⇒ VCEQ = 10 − (1.07mA )( 4.7k Ω + 1.2k Ω ) = 3.69 V

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Q1. The correct sequence of transistor configuration for input resistance is

(a) CB < CE < CC (b) CC < CE < CB
(c) CB ≈ CE < CC (d) CB ≈ CE ≈ CC
Q2. The correct sequence transistor configuration for output resistance is

(a) CB < CE < CC (b) CC < CE < CB
(c) CB ≈ CE < CC (d) CB ≈ CE ≈ CC
Q3. Which of the following is true regarding common emitter transistor amplifier?
(a) It is used for impedance matching
(b) It is also known as emitter follower
(c) Output voltage is 180o out of phase with respect to input voltage.
(d) It is used in high frequency application.
Q4. A transistor circuit in common emitter configuration is shown in the figure with
given parameters. The value of collector current is
(a) 10.8 mA ΙC
(b) 11.52 mA
ΙB
β = 49
(c) 11.76 mA
(d) 11.88 mA Ι E = 12 mA
Q5. A transistor have α dc = 0.98 , collector to base leakage current I CBO = 4 μ A and the
base current is 50 μ A . Then the value of emitter current is

(a) 1.0 mA (b) 2.5 mA (c) 4.0 mA (d) 5.0 mA

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Q6. A silicon transistor with built-in voltage 0.7V is used in the circuit shown, with
VBB = 9.7 V , RB = 281 k Ω, VCC = 12 V and RC = 2 k Ω . Which of the following figures
correctly represents the load line and quiescent Q -point?
RC
RB +
+ −
V CC
V BB
−
iC iC
( a ) (μΑ
32
) ΙΒ =
35μΑ
( b ) (mA)
6
ΙΒ =
35μΑ
32μΑ 32μΑ
Q
30μΑ Q
30μΑ
0 9 .7 VCE (V ) 0 12 VCE (V )
i
( c ) (mA
C
) ΙΒ =
( d ) (μiCA) ΙΒ =
6 35μΑ 32 Q 35μΑ
Q
32μΑ 32μΑ
30μΑ 30μΑ
0 12 VCE (V ) 0 9 .7 VCE (V )
Q7. Consider the following circuit in which the current gain β dc of the transistor is 100
and V BE = 0.7V . Which one of the following correctly represents the collector current I C
+20 V
and collector-emitter voltage VCE ?
(a) 23.7 mA, 8.9 V

100 kΩ 0.3 kΩ
(b) 18.7 mA, 12.9 V
(c) 18.7 mA, 8.9 V
(d) 23.7 mA, 12.9 V

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+15 V
and collector-emitter voltage VCE ?
(a) 12mA, 0.5V

100 kΩ 900 Ω
(b) 14mA, 1V
(c) 16mA, 2V
(d) 18mA, 3V 100 Ω
Q9. A silicon transistor with built-in voltage 0.7V is used in the circuit shown below,
with V BB = 9.7V , R B = 300kΩ, VCC = 12V , β = 100 and RC = 2kΩ . Which of the
following correctly represent the quiescent Q -point?

(a) (3 mA, 6V )
RC
(b) (6 mA, 6V )
(c) (3 mA, 3V ) RB +
+ −
V CC
(d) (6 mA, 3V ) V BB
−
Q10. The current gain of the transistor in the following circuit is β dc = 100 and
•12V
I C = 1.6 mA . The value of base resistance RB is
3kΩ
(a) 150 k Ω RB
vo
(b) 200 k Ω 20 μ F
20 μ F
vi
(c) 250 k Ω
(d) 300 k Ω
3kΩ

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with β = 140 . Which of the following correctly represent the value of VCE ?
• 22V
IC 10 kΩ
(a) 10V 39 kΩ vo
(b) 12V 20 μ F 20 μ F
vi
(c) 14V
(d) 16V 3.9 kΩ
1.5kΩ
Q12. A power amplifier has gain of 20 dB . If the the output power is 150 W then the
input power to the amplifier is .......Watt
Q13. In a transistor, the change in base current from 100 μ A to125 μ A , causes a change
in collector current from 5mA to 7.5mA keeping collector–to–emitter voltage constant
at10V . Base to emitter voltage is 0.7V . Then the current gain ( β ) of the transistor is……
Q14. The leakage current of a transistor are I CBO = 5 μ A and I CEO = 0.4 mA . The base
current is 30 μ A and V BE = 0.7V . Then β for the transistor is………...

and V BE = 0.7V . Then the collector current I C is ........mA

+12 V
240 kΩ 2.2 kΩ

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with V BB = 9.7V , VCC = 12V , β = 100 , RB = 300k Ω and VCE = 6 V . Which of the
following correctly represent the value of RC is ...........k Ω

RC
RB +
+ −
V CC
V BB
−
Multiple Select Type Questions (MSQ)
Q17. Which of the following statements are correct?

(a) When transistor is operating in active region input section is forward biased and
output section reverse biased.
(b) When transistor is operating in saturation region both sections are forward biased.
(c) When transistor is operating in cut off region both sections are reversed biased.
(d) Two p − n junction diodes connected back to back can be used as a transistor.
Q18. Which of the following statements are correct?
α
(a) The correct relation between α and β is β = .
1−α
(b) Collector current in C.B. configuration can be expressed by I C = α I E + I CBO .
(c) Collector current is C.E. configuration can be expressed by I C = β I B + I CEO .
(d) I CEO is less than I CBO and does not depend on temperature.
Q19. Which of the following are the characteristics of a common collector transistor
amplifier?
(a) Low voltage gain [≈ 1] (b) High current gain
(c) High input impedance (d) High output impedance

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and collector-emitter voltage VCE ? +15 V
(a) 7 mA
100 kΩ 900 Ω
(b) 14 mA
(c) 1 V
(d) 2 V
100 Ω
with V BB = 9.7V , VCC = 12V , β = 100 , RC = 2kΩ and I C = 3 mA . Which of the following
are correct?
(a) I B = 30 μ A RC
(b) I B = 40 μ A
RB +
(c) R B = 300kΩ + −
V CC
V BB
−
(d) RB = 400kΩ

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Solution
(MCQ)
Ans.1: (a)
Ans.2: (b)
Ans.3: (c)
Ans.4: (c)
IC β IE
I E = I B + IC = + IC ⇒ IC = = 11.76 mA
β β +1
Ans.5: (b)
α I B I CBO 0.98 × 50 ×10−3 4 ×10−3
I E ≈ IC = + = + = 2.45 mA
1−α 1−α 0.02 0.02
Ans.6: (c)
VBB − VBE 9.7 − 0.7
VCE = VCC − I C RC and I B = = = 32μ A
RB 281× 103
VCC
On VCE -axis I C = 0 thus VCE = VCC = 12 V and on I C -axis VCE = 0 thus I C = .
RC
12
⇒ IC = = 6 mA .
2
Ans.7: (d)
VCC − VBE 24 − 0.7
IB = = mA = 23.7 ×10−2 mA
RB 100
I C ≈ β I B = 23.7mA , VCE = VCC − I C RC = 20 − 23.7 × 0.3 = 12.9 V
Ans.8: (b)
VCC − VBE 15 − 0.7 14.3
IB = = mA = mA ≈ 14 mA
RB + RE 100 + 0.1 100.1
I C ≈ β I B = 14mA , VCE = VCC − I C (RC + RE ) = 15 − (900 + 100) × 14 × 10 −3 = 1.0V .

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Ans.9: (a)
VBB − VBE 9.7 − 0.7
IB = = = 30μ A ⇒ I C = β I B = 100 × 30 × 10−6 = 3mA
RB 300 ×103
and VCE = VCC − I C RC = 12 − 3 × 2 = 6V
Ans.10: (a)
⇒ I C = 1.6 mA = β I B ⇒ I B = 0.016 mA
VCC − VBE 12 − 0
IB = = = 0.016 mA ⇒ RB = 150 k Ω
RB + β ( RC + RE ) RB + 100 ( 3 + 3)
Ans.11: (b)
Drawing Thevenin’s equivalent of input circuit
39k Ω B 3.55k Ω B
+
IB VBE
22V 3.9k Ω ≡ 2.0V − E
1.5k Ω
1.5k Ω IE
3.9 39 × 3.9
ETh = × 22 = 2.0V , RTh = = 3.55k Ω
39 + 3.9 39 × 3.9
Applying KVL to input section,
−2.0 + 3.55 × I B + 0.7 + 1.5 × I E = 0 ⇒ −2.0 + 3.55 × I B + 0.7 + 1.5 × β I B = 0 ∵ I E ≈ β I B
2 V − 0.7V
IB = = 6 μ A ⇒ I C = β I B = 0.85 mA
3.55k + 140 ×1.5k
VCE = VCC − I C ( RC + RE ) = 22 − 0.85 (10 + 1.5 ) = 22 − 9.78 = 12.22 V

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(NAT)
Ans.12: 1.5
Pout 150
Power gain in dB = 10 log10 ⇒ 20 = 10 log10 ⇒ Pin = 1.5W
Pin Pin
ΔI C 2.5mA
Ans.13: 100 β= = = 100
ΔI B VCE
25μ A
Ans.14: 79
0.4 400
I CEO = ( β + 1) I CBO ⇒ 0.4 mA = ( β + 1) 5 ×10−3 mA ⇒ β = −3
−1 = − 1 = 79
5 ×10 5
Ans.15: 2.35
VCC − VBE 12 − 0.7
IB = = mA = 47 μ A , I C ≈ β I B = 50 × 47 × 10−3 mA = 2.35 mA
RB 240
Ans.16: 2
VBB − VBE 9.7 − 0.7
IB = = = 30μ A ⇒ I C = β I B = 100 × 30 × 10−6 = 3mA
RB 300 ×10 3
VCC − VCE 12 − 6
and VCE = VCC − I C RC ⇒ RC = = k Ω = 2k Ω
IC 3
MSQ
Ans.17: (a), (b) and (c)

Ans.18: (a), (b) and (c)
Ans.19: (a), (b) and (c)
VCC − VBE 15 − 0.7 14.3
Ans.20: (b), (c) IB = = mA = mA ≈ 14mA
RB + RE 100 + 0.1 100.1
I C ≈ β I B = 14mA , VCE = VCC − I C (RC + RE ) = 15 − (900 + 100 ) × 14 × 10 −3 = 1.0V .
IC 3
Ans.21: (a), (c) ∵ IC = β I B ⇒ I B = = mA = 30μ A
β 100
VBB − VBE 9.7 − 0.7
IB = ⇒ = 30μ A ⇒ RB = 300k Ω
RB RB

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4. Operational Amplifier
4.1 Characteristics of an Op-Amp
4.1.1 Input Offset Voltage
Input offset voltage is the voltage that must be applied between the two input terminals of
an op-amp to null the output, as shown in figure 4.1. In the figure Vdc1 and Vdc 2 are dc
voltages and Rs represent the source resistance.

V dc1 + VCC
Rs
+
Vio Output
−
Vio = (V dc1 − V dc 2 ) Rs Vo = 0 V
V dc 2
− VCC
Figure 4.1: Defining input offset voltage.

4.1.2 Input Offset Current
The algebraic difference between the currents into the inverting and non-inverting
terminal is referred to as input offset current I io . Thus I io = I B1 − I B 2 where I B1 is the
current into the non-inverting input and I B 2 is the current into the inverting input.
As the matching between two input terminals is improved, the difference between
I B1 and I B 2 becomes smaller; that is the I io value decreases further.
I B1
+ VCC
+
Output
I io = I B1 − I B 2
−
I B2 − VCC
Figure 4.2: Defining input offset current.

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4.1.3 Input Bias Current

Input bias current I B is the average of the currents that flow into the inverting and non-
I B1 + I B 2
inverting input terminals of the op-amp. In equation form I B =
2
4.1.4 Differential Input Resistance
Differential input resistance Ri (often referred to as input resistance) is the equivalent
resistance that can be measured at either the inverting or non-inverting input terminal
with the other terminal connected to ground.
4.1.5 Common-mode Rejection Ratio (CMRR)
The common-mode rejection ratio (CMRR) is defined as the ratio of the differential
Ad
voltage gain Ad to the common-mode voltage gain Acm ; that is, CMRR = .
Acm
The differential voltage gain Ad is the same as the large-signal voltage gain A , which is
specified on the data sheets; however, the common-mode voltage gain can be determined
Vocm
from the circuit shown in figure 4.3 and using the equation Acm = where
Vcm
Vocm = output common-mode voltage, Vcm = input common-mode voltage,
Acm = common-mode voltage gain.

+ VCC
+ Vocm
• Output
−
± Vcm
− VCC
Figure 4.3: Common-mode configuration.

The CMRR can also be expressed as the ratio of the change in input offset voltage to the
Vio
total change in common-mode voltage. Thus CMRR =
vcm

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Ad Ad Av Av
Thus CMRR = = = d cm ⇒ v0 cm = d cm
Acm vocm / vcm vocm CMRR
The CMRR value is very large and is therefore usually specified in decibels (dB).
⎛ A ⎞ ⎛V ⎞
Thus CMRR(dB ) = 20 log⎜⎜ d ⎟⎟ or CMRR(dB ) = 20 log⎜⎜ io ⎟⎟ .
⎝ Acm ⎠ ⎝ vcm ⎠
Generally Acm is very small and Ad = A is very large; therefore, the CMRR is very large.
The higher the value of CMRR, the better is the matching between two input terminals
and the smaller is the output common-mode voltage.
4.1.6 Supply Voltage Rejection Ratio
The change in an op-amp’s input offset voltage Vio caused by variations in supply
voltages is called the supply voltage rejection ratio (SVRR). A variety of terms equivalent
to SVRR are used by different manufacturers. Such as the power supply rejection ratio
(PSRR) and the power supply sensitivity (PSS). These terms are expressed either in
microvolt per volt or in decibels. If we denote the change in supply voltages by ΔV ,
ΔVio ⎛ ΔV ⎞
SVRR can be defined as follows: SVRR = or SVRR = 20 log⎜⎜ ⎟⎟ .
ΔV ⎝ ΔVio ⎠
This means that the lower the value of SVRR in microvolt/volt, the better for op-amp
performance.
4.1.7 Large-signal Voltage Gain

Since the op-amp amplifies difference voltage between two input terminals, the voltage
gain of the amplifier is defined as:
Output Voltage V
Voltage Gain = ⇒ A= o .
Differential Input Voltage Vid
Because output signal amplitude is much larger than the input signal, the voltage gain is
commonly called large-signal voltage gain.

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4.1.8 Output Voltage Swing

The output voltage swing Vo max of the Op-
+ VCC
Amp is guaranteed to be between +VCC and v1 + Vo = Avid
vid Output
−VCC . In fact, the output voltage swing •
indicates the values of positive and negative

v2 −
RL
saturation voltages of the op-amp. The − VCC
output voltage never exceeds these limits for
Figure 4.4: Determining voltage gain.
given supply voltages +VCC and −VCC .
4.1.9 Output Resistance

Output resistance Ro is the equivalent resistance that can be measured between the output
terminal of the op-amp and the ground.
4.1.10 Transient Response
The response of any practically useful network to a given input is composed of two parts:
the transient and steady-state response. The transient response is that portion of the
complete response before the output attains some fixed value. Once reached, this fixed
value remains at that level and is, therefore, referred to as a steady-state value. The
response of the network after it attains a fixed value is independent of time and is called
the steady-state response. Unlike the steady-state response, the transient response is time
variant. The rise time and the percent of overshoot are the characteristics of the transient
response. The time required by the output to go from 10% to 90% of its final value is
called the rise time. Conversely, overshoot is the maximum amount by which the output
deviates from the steady-state value. Overshoot is generally expressed as a percentage.
Smaller the value of rise time larger is the bandwidth.
4.1.11 Slew Rate
Sew rate (SR) is defined as the maximum rate of change of output voltage per unit of
dV0
time and is expressed in volts per microseconds. SR = V / μs
dt maximum

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Slew rate indicates how rapidly the output of an op-amp can change in response to
changes in the input frequency. The slew rate changes with change in voltage gain and is
normally specified at unity (+1) gain. The slew rate of an op-amp is fixed; therefore, if
the slope requirements of the output signal are greater than the slew rate, then distortion
occurs. Thus slew rate is one of the important factors in selecting the op-amp for ac
applications, particularly at relatively high frequencies.
4.1.12 Gain-Bandwidth Product

The gain-bandwidth product (GB) is the bandwidth of the op-amp when the voltage gain
is 1. Equivalent terms for gain-bandwidth product are closed-loop bandwidth, unity gain
bandwidth, and small-signal bandwidth.
4.1.13 The Ideal Op-Amp

An ideal op-amp would exhibit the following electrical characteristics:
1. Infinite voltage gain A .
2. Infinite input resistance Ri so that almost any signal source can drive it and there is no
loading of the preceding stage.
3. Zero output resistance Ro so that output can drive an infinite number of other devices.
4. Zero output voltage when input voltage is zero.
5. Infinite bandwidth so that any frequency signal from 0 to ∞ Hz can be amplified
without attenuation.
6. Infinite common-mode rejection ratio so that the output common-mode noise voltage
is zero.
7. Infinite slew rate so that output voltage changes occur simultaneously with input
voltage changes.
There are practical op-amps that can be made to approximate some of these
characteristics using a negative feedback arrangement. In particular, the input resistance,
output resistance, and bandwidth can be brought close to ideal values by this method.

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4.1.14 Equivalent Circuit of an Op-Amp

Figure 4.5 shows an equivalent circuit of an op-amp. This circuit includes important
values from the data sheets: A , Ri and Ro . Note that Avid is an equivalent Thevenin
voltage source, and Ro is the Thevenin equivalent resistance looking back into the output
terminal of an op-amp.
The equivalent circuit is useful in analyzing the basic operating principles of op-amps
and in observing the effects of feedback arrangements. For the circuit shown, the output
voltage is: v0 = Avid = A(v1 − v 2 )
where A = large-signal voltage gain, vid = difference input voltage
v1 = voltage at the non-inverting input terminal with respect to ground

v2 = voltage at the inverting terminal with respect to ground.
+ VCC
Invertingv 2 −
input
Ro
vid Ri Output
Noninvertingv1 + v o = Av id
Av id
input +
−
− VCC
Figure 4.5: Equivalent circuit of an op-amp.
Equation v0 = Avid = A(v1 − v 2 ) indicates that the output voltage v0 is directly
proportional to the algebraic difference between the two input voltages. In other words,
the op-amp amplifies the difference between the two input voltages; it does not amplify
the input voltages themselves. For this reason the polarity of the output voltage depends
on the polarity of the difference voltage.

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4.1.15 Ideal Voltage Transfer Curve

Equation v0 = Avid = A(v1 − v 2 ) is the basic op-amp equation, in which the output offset
voltage is assumed to be zero. This equation is useful in studying the op-amp’s
characteristics and in analyzing different circuit configurations that employ feedback.
The graphic representation of this equation is shown in figure 4.6, where the output
voltage v0 is plotted against input difference voltage vid keeping gain A constant.
vo
Positive saturation
•
voltage + Vsat < + VCC
Slope = A
− vid + vid
Negaitive saturation
• voltage − Vsat < − VCC
Figure 4.6: Ideal voltage transfer curve.
4.2 Open-Loop Op-Amp Configurations

In the case of amplifiers the term open loop indicates that no connection, either direct or
via another network, exists between the output and input terminals. That is, the output
signal is not fed back in any form as part of the input signal, and the loop that would have
been formed with feedback is open.
When connected in open-loop configuration, the op-amp simply functions as a high-gain
amplifier. There are three open-loop op-amp configurations:
1. Differential amplifier
2. Inverting amplifier
3. Non-inverting amplifier
These configurations are classed according to the number of inputs used and the terminal
to which the input is applied when a single input is used.

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4.2.1 The Differential Amplifier

Figure 4.7 shows the open-loop differential amplifier in which input signals vin1 and vin 2
are applied to the + VCC
v1
positive and negative +
input terminals. Since vid
vo = A ( vin1 − vin 2 )
the op-amp amplifies v2 −
the difference between Rin1 Rin 2 − VCC RL
the two input signals, + +
Signal vin1 ~ ~ vin 2 Signal
this configuration is source − − source
called the differential
amplifier. The op-amp Figure 4.7: Differential amplifier.
is a versatile device
because it amplifies both ac and dc voltages. The source resistances Rin1 and Rin 2 are
normally negligible compared to the input resistance Ri . Therefore, the voltage drops
across these resistors can be assumed to be zero, which then implies that v1 = vin1
and v 2 = vin 2 thus v0 = A(vin1 − vin 2 ) .
4.2.2 The inverting Amplifier

In the inverting amplifier only one input is
v1 + VCC
applied and that is to the inverting input +
terminal. The non-inverting input terminal is vid
grounded as shown in figure 4.8.
vo = − Avin
v2 −
∵ v1 = 0 V and v 2 = vin thus vo = − Avin . Rin − VCC RL
The negative sign indicates that the output +
vin ~ Signal
voltage is out of phase with respect to input by − source
1800 or is of opposite polarity. Thus in the
inverting amplifier the input signal is Figure 4.8: Inverting amplifier.
amplified by gain A and is also inverted at the output.

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4.2.3 The Non-inverting Amplifier

Figure 4.9 shows the open-loop non-inverting amplifier. In this configuration the input is
applied to the non-inverting + VCC
v1
input terminal, and the +
inverting terminal is connected vid
vo = Avin
v2 −
to ground. Rin
Signal + − VCC RL
In the circuit, v1 = vin and source vin ~
−
v 2 = 0 V , thus vo = Avin .
This means that the output
voltage is larger than the input Figure 4.9: Non-inverting amplifier.
voltage by gain A and is in

phase with the input signal. In all three open-loop configurations any input signal
(differential or single) that is only slightly greater than zero drives the output to saturation
level. This results from the very high gain (A) of the op-amp.
NOTE: Thus, when operated open-loop, the output of the op-amp is either negative or
positive saturation or switches between positive and negative saturation levels. For this
reason, open-loop op-amp configurations are not used in linear applications.
4.3 An Op-Amp with Negative Feedback
Since the open-loop gain of the op-amp is very high, only the smaller signals (of the
order of microvolt or less) having very low frequency may be amplified accurately
without distortion. However, these small signals are very susceptible to noise and almost
impossible to obtain in the laboratory.
Besides being large, the open-loop voltage gain of the op-amp is not a constant. The
voltage gain varies with changes in temperature and power supply in open-loop op-amps,
which makes the open-loop op-amp unsuitable for many linear applications. In most
linear applications the output is proportional to the input and is of the same type.

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In addition, the bandwidth (band of frequencies for which the gain remains constant) of
most open-loop op-amps is negligibly small-almost zero. For this reason the open-loop
op-amp is impractical in ac applications.
We can select as well as control the gain of the op-amp if we introduce a modification in
the basic circuit. This modification involves the use of feedback; that is, an output signal
is fed back to the input either directly or via another network. If the signal fed back is of
opposite polarity or out of phase by 180o (or odd integer multiples of 180o) with respect
to the input signal, the feedback is called negative feedback. An amplifier with negative
feedback has a self-correcting ability against any change in output voltage caused by
changes in environmental conditions.
On the other hand, if the signal fed back is in phase with the input signal, the feedback is
called positive feedback. In positive feedback the feedback signal aids the input signal.
For this reason it is also referred to as regenerative feedback. Positive feedback is
necessary in oscillator circuits.
When used in amplifiers, negative feedback stabilizes the gain, increases the bandwidth,
and changes the input and output resistances. Of course, the price paid for these
improvements is reduced voltage gain. Other benefits of negative feedback include a
decrease in harmonic or nonlinear distortion and reduction in the effect of input offset
voltage at the output. Negative feedback also reduces the effect of variations in
temperature and supply voltages on the output of the op-amp.
4.3.1 Block Diagram Representation of Feedback Configurations
An op-amp that uses feedback is called a feedback amplifier. A feedback amplifier is
sometimes referred to as a closed-loop amplifier because the feedback forms a closed
loop between the input and the output. A feedback amplifier essentially consists of two
parts: an op-amp and a feedback circuit. The feedback circuit can take any form
whatsoever depending on the intended application of the amplifier. This means that the
feedback circuit may be made up of passive components, active components, or
combinations of both. Here, in order to develop the basic feedback concepts, we use only
purely resistive feedback circuits.

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A closed-loop amplifier can be represented by using two blocks, one for an op-amp and
another for a feedback circuit. There are four ways to connect these two blocks. These
connections are classified according to whether the voltage or current is fed back to the
input in series or in parallel, as follows:
1. Voltage-series feedback 2. Voltage-shunt feedback
3. Current-series feedback 4. Current-shunt feedback
The four types of configurations are illustrated in figure 4.10. In figure 4.10 (a) and (b)
the voltage across load resistor RL is the input voltage to the feedback circuit. The
feedback quantity (either voltage or current) is the output of the feedback circuit and is
proportional to the output voltage. On the other hand, in the current-series and
current-shunt feedback circuits of figure 4.10 (c) and (d) the load current i L flows into
the feedback circuit. The output of the feedback circuit (either voltage or current) is
proportional to the load current i L . i in IB
+
Op-amp vo v in ~ if Op-amp vo
RL RL
−
+
v in ~
−
vf Feedback v o Feedback v o
circuit circuit
(a ) ( b)
i in IB
Op-amp +
iL v in ~ if Op-amp iL
+ −
v in ~ RL RL
−
Feedback Feedback
circuit circuit
(c) (d )
Figure 4.10: Feedback configurations. (a) Voltage-series. (b) Voltage-shunt.
(c) Current-series. (d) Current-shunt.

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The voltage-series and voltage-shunt feedback configurations are important because they
are most commonly used. An in-depth analysis of these two configurations is presented
here, computing voltage gain, input resistance, output resistance and bandwidth for each.
4.4 Voltage-Series Feedback Amplifier (Non-inverting feedback Amp)
The schematic diagram of the voltage-series feedback amplifier is shown in figure 4.11.
The op-amp is represented by its v1
schematic symbol, including its ++ + VCC
vid A +
large-signal voltage gain A and the Rin ≅ 0 Ω v2 −−
+ − VCC
feedback of two resistors R1 and RF . vin ~
vo RL
The voltage gain for the op-amp −
+ RF
with and without feedback, and the vf R1
− −
gain of the feedback circuit are
Feedback
defined as follows: circuit
Open-loop voltage gain (or gain Figure 4.11: Voltage-series feedback amplifier.
vo
without feedback) A =
vid
vo
Closed-loop voltage gain (or gain with feedback) AF =
vin
vf
Gain of the feedback circuit B =
vo
4.4.1 Negative Feedback
Referring to the circuit of figure 4.11, Kirchhoff’s voltage equation for the input loop is:
vid = vin − v f where vin = input voltage, v f = feedback voltage, vid = difference input
voltage.
From equation vid = vin − v f , this difference voltage is equal to the input voltage vin
minus the feedback voltage v f . In other words, the feedback voltage always opposes the
input voltage (or is out of phase by 180o with respect to the input voltage); hence the
feedback is said to be negative.

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R1vo
∵ vo = A ( v1 − v2 ) and v1 = vin , v 2 = v f =
R1 + RF
⎛ Rv ⎞ A(R1 + RF )vin v A ( R1 + RF )
⇒ vo = A ⎜ vin − 1 o ⎟ ⇒ vo = ⇒ AF = o = (Exact)
⎝ R1 + RF ⎠ R1 + RF + AR1 vin R1 + RF + AR1
⇒ vo RF (Ideal) ∵ AR1 >> R1 + RF
AF = = 1+
vin R1
The above equation is important because it shows that the gain of the voltage-series
feedback amplifier is determined by the ratio of two resistors, R1 and RF .
As defined previously, the gain of the feedback circuit (B) is the ratio of v f and vo .
vf R1 1
Thus B= = , we can conclude that AF = (ideal)
vo R1 + RF B
This means that the gain of the feedback circuit is the reciprocal of the closed-loop
voltage gain. In other words for given R1 and RF the values of AF and B are fixed.
Finally, the closed-loop voltage gain AF can be expressed in terms of open-loop gain A
⎛ R + RF ⎞
A⎜⎜ 1 ⎟
⎝ R1 + R F ⎟⎠ A
and feedback circuit gain B as follows. Thus AF = ⇒ AF =
R1 + R F
+
AR1 1 + AB
R1 + R F R1 + RF
where AB = loop gain.
4.4.3 Difference Input Voltage Ideally Zero
vo
∵ vid = ⇒ vid ≅ 0 ⇒ v1 ≅ v2 (Since A is very large (ideally infinite))
A
That is the voltage at the noninverting input terminal of an op-amp is approximately
equal to that at the inverting input terminal provided that A is very large. This concept is
useful in the analysis of closed-loop op-amp circuits.
For example, ideal closed-loop voltage gain can be obtained using the preceding results
as follows. In the circuit of voltage series feedback amplifier,
R1vo R1vo v R
v1 = vin , v 2 = v f = ⇒ vin = ⇒ AF = o = 1 + F .
R1 + RF R1 + RF vin R1

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Let Ri is the input resistance (open-loop) of the op-amp, and RiF is the input resistance
of the amplifier with feedback. Then RiF = Ri (1 + AB )
This means that the input resistance of the op-amp with feedback is (1 + AB ) times that
without feedback.
Output resistance is the resistance determined looking back into the feedback amplifier
from the output terminal. Thus Ro
RoF =
1 + AB
The result shows that the output resistance of the voltage-series feedback amplifier is
1/ (1 + AB ) times the output resistance Ro of the op-amp. That is, the output resistance of
the op-amp with feedback is much smaller than the output resistance without feedback.
The bandwidth of an amplifier is defined as the band (range) of frequencies for which the
gain remains constant. f F = f 0 (1 + AB )
Above equation indicates that the bandwidth of the noninverting amplifier with feedback,
f F is equal to its bandwidth without feedback, f 0 times (1 + AB ) .

In an open-loop op-amp the total output offset voltage is equal to either the positive or
negative saturation voltage. Since with feedback the gain of the non-inverting amplifier
changes from A to A / (1 + AB ) the total output offset voltage with feedback must also be
1/ (1 + AB ) times the voltage without feedback. That is
⎛ total output offset ⎞ = total ouput offset voltage without feedback ⇒ V = ±Vsat
⎜ voltage with feedback ⎟
⎝ ⎠ 1 + AB
ooT
1 + AB
From this analysis it is clear that the non-inverting amplifier with feedback exhibits the
characteristics of the perfect voltage amplifier. That is, it has very high input resistance,
very low output resistance, stable voltage gain, large bandwidth, and very little (ideally
zero) output offset voltage.

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4.4.8 Voltage Follower

The lowest gain that can be obtained from a non-inverting amplifier with feedback is 1.
When the non-inverting amplifier is configured for unity gain, it is called a voltage
follower because the output voltage is equal to and in phase with the input. In other
words, in the voltage follower the output follows the input.
Although it is similar to the discrete emitter follower, the voltage follower is preferred
because it has much higher input resistance, and the output amplitude is exactly equal to
the input.
To obtain the voltage follower from the non-inverting amplifier simply open R1 and
short RF . The resulting circuit is shown in figure 4.12. In this figure all the output voltage
is fed back into the inverting terminal of the op-amp; consequently, the gain of the
feedback circuit is 1 ( B = AF = 1) .
+ VCC
+
Rin = 0 Ω A
+ −
+
vin ~ − VCC
RL vo = vin
−
−
Figure 4.12: Voltage follower.
Ro ± Vsat
Thus RiF = ARi , RoF = , f F = Af 0 , VooT = ∵ (1 + A) ≅ A
A A
The voltage follower is also called a non-inverting buffer because, when placed between
two networks, it removes the loading on the first network.

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4.5 Voltage-Shunt Feedback Amplifier (Inverting Amplifier with Feedback)

Figure 4.13 shows the voltage shunt feedback amplifier using an op-amp. Note that the
non-inverting terminal is grounded, and the feedback circuit has only one resistor RF .
However, an extra resistor R1 is connected in series with the input signal source vin .
I B1 + VCC
v1
+ R1 v2 RF
R1 I B2 A
− iin I iF
v2 i − B2 + VCC
Rin = 0 Ω iin F − VCC
vo RL ≡ −
+ RF + +
vin ~ ~ vin v1 A
iF − + −
−
I B1 − VCC vo RL
+
Feedback circuit
Figure 4.13: Voltage-shunt feedback amplifier.

The closed-loop voltage gain AF of the voltage-shunt feedback amplifier can be obtained
by writing Kirchhoff’s current equation at the input node v2 as follows: iin = iF + I B
Since Ri is very large, the input bias current I B is negligibly small.
vin − v2 v2 − v0 v0 v
Therefore iin ≅ iF ⇒ = ∵ v1 − v2 = and v1 = 0 V , v 2 = − 0 .
R1 RF A A
vin + vo / A − ( vo / A) − vo vo ARF
⇒ = ⇒ AF = =− (Exact)
R1 RF vin R1 + RF + AR1
⇒ vo R (Ideal) ∵ AR1 >> R1 + RF
AF = =− F
vin R1
The negative sign in equation indicates that the input and output signals are out of phase
by 180o (or of opposite polarities). In fact, because of this phase inversion, the
configuration is commonly called an inverting amplifier with feedback.

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This equation shows that the gain of the inverting amplifier is set by selecting a ratio of
feedback resistance RF to the input resistance R1 . In fact, the ratios RF / R1 can be set to
any value whatsoever, even to less than 1. Because of this property of the gain equation,
the inverting amplifier configuration with feedback lends itself to a majority of
applications as against those of the non-inverting amplifier.
A ⎛⎜ ⎞
RF
R1 + RF ⎟⎠
∵ ⎝
AK RF
=− where K= is a voltage attenuation factor,
1+
AR1 1 + AB R1 + RF
R1 + RF
R1
B= is gain of the feedback circuit.
R1 + RF
4.5.2 Inverting Input Terminal at Virtual Ground
The difference input voltage is ideally zero; that is, the voltage at the inverting terminal
( v2 ) is approximately equal to that at the non-inverting terminal ( v1 ) . In other words, the
inverting terminal voltage v2 is approximately at ground potential. Therefore, the
inverting terminal is said to be at virtual ground. This concept is extremely useful in the
analysis of closed-loop inverting amplifier circuits. For example, ideal closed-loop gain
can be obtained using the virtual-ground concept as follows:
vin − v2 v2 − vo vo R
∵ iin ≅ iF ⇒ = ⇒ AF = =− F ∵ v1 = v2 = 0 V .
R1 RF vin R1
RiF = R1 +
RF
(Ri ) (Exact)
1+ A
RF
Since Ri and A are very large Ri ≅ 0 Ω , hence RiF = R1 (ideal).
1+ A

Ro
RoF =
1 + AB

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f F = f 0 (1 + AB )
unity gain bandwidth UGB

where f 0 = break frequency of the op-amp = =
open - loop voltage gain A
Thus f F =
UGB
(1 + AB ) and fF =
(UGB )(Κ ) where K =
RF
A AF R1 + RF
AK ⎛ A ⎞
and AF = =⎜ ⎟K .
1 + AB ⎝ 1 + AB ⎠
(total output offset voltage with feedback ) = total output offset voltage without feedback
1 + AB
± Vsat
i.e. VooT = .
1 + AB
4.5.7 Current-to-Voltage Converter
Let us reconsider the ideal voltage-gain equation of the inverting amplifier,
v0 R ⎛v ⎞
=− F ⇒ v0 = −⎜⎜ in ⎟⎟ RF v2 RF
vin R1 ⎝ R1 ⎠
iin iin + VCC
However, since v1 = 0 V and v1 = v 2 , I B2 ≅ 0
−
vin Α vo = −iin RF
= iin and vo = −iin R F . +
R1 v1 −
− VCC RL
This means that if we replace the
I B1 ≅ 0 +
vin and R1 combination by a current
source iin as shown in figure 4.14,

Figure 4.14: Current-to-voltage converter.
the output voltage vo becomes
proportional to the input current iin . In other words, the circuit converts the input current
into a proportional output voltage.
One of the most common uses of the current-to-voltage converter is in sensing current
from photo detectors and in digital-to-analog converter applications.

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Table: Summary of results obtained for non-inverting and inverting amplifiers
Parameter Noninverting Inverting amplifier

A(R1 + RF ) − ARF
1. Voltage gain AF = (exact) AF = (exact)
R1 + RF + AR1 R1 + RF + AR1
A − AK RF
= = ,where K =
1 + AB 1 + AB R1 + RF
RF RF
= 1+ (ideal) = − (ideal)
R1 R1
2. Gain of the
R1 R1
feedback circuit B= B=
R1 + RF R1 + RF
⎛ R ⎞
3. Input resistance RiF = Ri (1 + AB ) RiF = R1 + ⎜⎜ F Ri ⎟⎟
⎝1+ A ⎠
Ro Ro
4. Output resistance RoF = RoF =
1 + AB 1 + AB
5. Bandwidth f F = f 0 (1 + AB ) f F = f 0 (1 + AB )
fF =
UGB
fF =
(UGB )(K )
AF AF
6. Total output
± Vsat ± Vsat
offset voltage VooT = VooT =
1 + AB 1 + AB

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4.6 Differential Amplifiers

4.6.1 Differential Amplifier with One Op-Amp
Figure below shows the differential amplifier with one op-amp. A close examination of
the differential amplifier is a combination of inverting and non-inverting amplifier.
R1 v2 RF
+
vx ~
+ VCC
− v xy
− RF
Α vo = − (v x − v y )
+ R1
+ R2 v1
vy ~ R3 − VCC RL
−
Figure 4.15: Differential amplifier with one op-amp. R1= R2 and RF = R3.
When v y = 0 V , the configuration becomes an inverting amplifier; hence the output due
RF ( vx )
to v x only is vox = − .
R1
Similarly, when v x = 0 V , the configuration is a non-inverting amplifier having a voltage-
divider network composed of R2 and R3 at the non-inverting input.
R3 (v y ) ⎛ R ⎞
Therefore, v1 = and the output due to v y then is voy = ⎜⎜1 + F ⎟⎟ v1 .
R2 + R3 ⎝ R1 ⎠
R3 ⎛ R1 + RF ⎞ RF ( v y )
⇒ voy = ⎜ ⎟ vy = ∵ R1 = R2 and RF = R3
R2 + R3 ⎝ R1 ⎠ R1
( )
Thus the net output voltage is v 0 = v x + v y ⇒ vo = −
RF
(v x − v y ) = − RF v xy
R1 R1
vo R
⇒ AD = =− F
vxy R1
Note that the gain of the differential amplifier is the same as that of the inverting
amplifier.
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4.6.2 Differential Amplifier with Two Op-Amps + VCC
+ +
Α2
vx ~
−
− v xy
+ VCC − VCC
+ v z R1
+ Α1
vy ~ − RF
−
− VCC
R3 = R1
R2 = R F
Figure 4.16: Differential amplifier with two op-amps.

⎛ R ⎞
The output v z of the first stage is v z = ⎜⎜1 + 3 ⎟⎟ v y .
⎝ R2 ⎠
By applying the superposition theorem to the second stage, we can obtain the output
RF (v z ) ⎛ RF ⎞ ⎛R ⎞⎛ R3 ⎞ ⎛ R ⎞
voltage: vo = − + ⎜⎜1 + ⎟⎟ v x ⇒ vo = −⎜⎜ F ⎟⎟⎜⎜1 + ⎟⎟v y + ⎜⎜1 + F ⎟⎟ v x
R1 ⎝ R1 ⎠ ⎝ R1 ⎠⎝ R2 ⎠ ⎝ R1 ⎠
⎛ R ⎞
Since R1 = R3 and RF = R2, vo = −⎜⎜1 + F ⎟⎟(v x − v y ) .
⎝ R1 ⎠
where v xy = (v x − v y ) .
vo R
Therefore, AD = = 1+ F
v xy R1

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4.7 The Practical Op-Amp

R1 RF
Offset minimizing resistance ROM = is used in non-inverting and inverting
R + RF
configuration as shown in figure given below.
R1 V2 RF
I B2
+ VCC
+ ⎛ R ⎞
vo = ⎜⎜1 + F ⎟⎟vin
Α ⎝ R1 ⎠
V1 −
− VCC VoI B ≅ 0V
RR
ROM = 1 2 RL
R1 + R2 I B1
+
vin ~
−
Figure 4.17: Non-inverting amplifier with offset minimizing resistor ROM.
R1 V2 RF
+ I B2
+ VCC ⎛ R ⎞
vin ~ + vo = ⎜⎜ − F ⎟⎟vin
− Α ⎝ R1 ⎠
V1 − VoI B ≅ 0V
− VCC
RR
ROM = 1 2 RL
R1 + R2 I B1
Figure 4.18: Inverting amplifier with offset minimizing resistor ROM.

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4.8 Summing, Scaling and Averaging Amplifier

This section shows how the inverting, non-inverting and differential configurations are
useful in such applications as summing, scaling and averaging amplifiers.
4.8.1 Inverting Configuration
Figure below shows the inverting configuration with three inputs Va , Vb and Vc .
Depending on the relationship between the feedback resistor RF and the input
resistors Ra , Rb and Rc the circuit can be used as a summing amplifier, scaling amplifier
or averaging amplifier.
Ra V2 RF
+ Va
Ia R
+ Vb
b
+ VCC
Ib R − ⎛R ⎞
I B2 ≅ 0 R R
Vo = − ⎜ F Va + F Vb + F Vc ⎟
+ Vc c
+ ⎝ Ra Rb Rc ⎠
Ic I B1 ≅ 0 V1 −V CC
RL
ROM = (Ra || Rb || Rc || RF )
Figure 4.19: Inverting configuration with three inputs can be used as a summing
amplifier, scaling amplifier, or averaging amplifier.
The circuit’s function can be verified by examining the expression for the output voltage
Vo which is obtained from Kirchhoff’s current equation written at node V2 .
I a + Ib + Ic = I B + I F
Since Ri and A of the op-amp are ideally infinity, I B = 0 A and V1 = V2 ≅ 0 V .
Va Vb Vc V ⎛R R R ⎞
Therefore, + + = − o ⇒ Vo = − ⎜ F Va + F Vb + F Vc ⎟
Ra Rb Rc RF ⎝ Ra Rb Rc ⎠
Summing amplifier
If in the circuit, Ra = Rb = Rc = RF then Vo = −(Va + Vb + Vc ) hence the circuit is called
summing amplifier.

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Scaling or weighted amplifier

If each input voltage is amplified by a different factor, in other words, weighted
differently at the output, the circuit is then called a scaling or weighted amplifier. This
condition can be accomplished if Ra , Rb and Rc are different in value. Thus the output
voltage of the scaling amplifier is
⎛R R R ⎞ R R R
Vo = −⎜⎜ F Va + F Vb + F Vc ⎟⎟ where F ≠ F ≠ F .
⎝ Ro Rb Rc ⎠ Ra Rb Rc
Average circuit
The circuit can be used as an averaging circuit, in which the output voltage is equal to the
average of all the input voltages. This is accomplished by using all input resistors of
equal value Ra = Rb = Rc = R . In addition, the gain by which each input is amplified must
RF 1
be equal to 1 over the number of inputs; that is, = where n is the number of inputs.
R n
RF 1 ⎛ V + Vb + Vc ⎞
Thus, if there are three inputs, we want = , consequently Vo = −⎜ a ⎟.
R 3 ⎝ 3 ⎠
4.8.2 Non-inverting Configuration
If input voltage sources and resistors are connected to the non-inverting terminal as
shown in figure below, the circuit can be used either as a summing or averaging amplifier
through selection of appropriate values of resistors, that is, R1 and RF .
R1 V2 RF
+ VCC
− ⎛ R ⎞⎛ V + Vb + Vc ⎞
V1 Vo = ⎜⎜1 + F ⎟⎟⎜ a ⎟
R + ⎝ R1 ⎠⎝ 3 ⎠
+ Va
− VCC
R
+ Vb RL
R
+ Vc AR1
RiF ≅ Ri
R1 + RF
Figure 4.20: Non-inverting configuration.

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Again, to verify the functions of the circuit, the expression for the output voltage must be
obtained. Recall that the input resistance RiF is very large. Therefore, using the
superposition theorem, the voltage V1 at the non-inverting terminal is
R/2 R/2 R/2 V V V V + Vb + Vc

V1 = Va + Vb + Vc or V1 = a + b + c = a
R+ R/2 R+ R/2 R+ R/2 3 3 3 3
⎛ R ⎞ ⎛ R ⎞ V + Vb + Vc
⇒ Vo = ⎜⎜1 + F ⎟⎟V1 = ⎜⎜1 + F ⎟⎟ a
⎝ R1 ⎠ ⎝ R1 ⎠ 3
Averaging amplifier
Above equation shows that the output voltage is equal to the average of all input voltages
RF
times the gain of the circuit 1 + , hence the name averaging amplifier. Depending on
R1
the application gain is 1 ( RF = 0 ) the output voltage will be equal to the average of all
input voltages.
RF
Summing amplifier If 1 + = 3 then RF = 2 R1 ⇒ Vo = Va + Vb + Vc
R1
4.8.3 Differential Configuration (Subtractor)
A basic differential amplifier can be used as a subtractor as shown in figure below.
R R
+ Va
+ VCC
−
Vo = Vb − Va
R +
+ Vb
− VCC
RL
R
Figure 4.21: Basic differential amplifier used as a subtractor.

From this figure, the output voltage of the differential amplifier with a gain of 1 is
Vo = −
R
(Va − Vb ) ⇒ Vo = Vb − Va
R

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Summing amplifier
A four-input summing amplifier may be constructed using the basic differential amplifier
if two additional input sources are connected, one each to the inverting and non-inverting
input terminals through resistor R (as shown in figure).
R V2 R
+ Va
R
+ Vb + VCC
−
Vo = −Va − Vb + Vc + Vd
+ Vc
R +
V1 − VCC
+ Vd R RL
Figure 4.22: Summing amplifier using differential configuration.
The output voltage equation for this circuit can be obtained by using the superposition
theorem. For instance, to find the output voltage due to Va alone, reduce all other input
voltages Vb , Vc and Vd to zero as shown in figure below.
R V2 R
+ Va
R + VCC
−
Voa
+
− VCC
RL
R R R
Figure 4.23: Deriving the output voltage equation from the summing amplifier.

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In fact, this circuit is an inverting amplifier in which the inverting input is at virtual
ground (V2 = 0 V ) .
R
Therefore, the output voltage is Voa = − Va = −Va .
R
Similarly, the output voltage due to Vb alone is Vob = −Vb .
Now if input voltages Va , Vb and Vc are set to zero, the circuit becomes a non-inverting
amplifier in which the voltage V1 at the non-inverting input is
R/2 V
V1 = Vc = c .
R + R/2 3
This means that the output voltage due to Vc alone is
⎛ R ⎞ ⎛V ⎞
Voc = ⎜1 + ⎟V1 = (3)⎜ c ⎟ = Vc .
⎝ R/2⎠ ⎝ 3⎠
Similarly, the output voltage due to all four input voltages is given by
Vo = Voa + Vob + Voc + Vod = −Va − Vb + Vc + Vd
Notice that the output voltage is equal to the sum of the input voltages applied to the non-
inverting terminal plus the negative sum of the input voltages applied to the inverting
terminal.

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4.9 The Integrator

A circuit in which the output voltage waveform is the integral of the input voltage
waveform is the integrator or the integration amplifier. Such a circuit is obtained by
using a basic inverting amplifier configuration if the feedback resistor RF is replaced by
a capacitor CF (figure shown below)

R1 v2 CF
+ i1 iF
IB + VCC
vin ~
− 1
∫v
t
vo = − dt + C
− R1C F o
in
v1 +
− VCC
RL
IB
Figure 4.24(a): The integrator circuit.
The expression for the output voltage vo can be obtained by writing Kirchhoff’s current
equation at node v2 : i1 = I B + iF ⇒ i1 ≅ iF (Since I B is negligibly small)

Recall that the relationship between current through and voltage across the capacitor is
vin − v2 ⎛d⎞ dvc
i1 ≅ iF ⇒ = CF ⎜ ⎟ ( v2 − vo ) ∵ ic = C
R1 ⎝ dt ⎠ dt
vin d
⇒ = CF ( −vo ) ∵ v1 = v2 ≅ 0
R1 dt
The output voltage can be obtained by integrating both sides with respect to time:
vin d 1
∫0 R1 ∫0 CF dt ( −vo ) dt = CF ( −vo ) + vo t =0 ⇒
t
∫v
t t
dt = vo = − in dt + C
R1CF 0
where C is the integration constant and is proportional to the value of the output voltage
vo at time t = 0 seconds.

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The waveforms are drawn with the assumption that R1CF = 1 second and VooT = 0 V , that
is, C = 0 . v in
v in
1V
1V 3T
2 2T
0V t ( sec )
0V t ( sec ) T T
2
− 1V
− 1V
0 .5 1 1 .5
v in
vo T 3T
2 T 2 2T
0V t ( sec )
1
− V
0V t ( sec ) ω
2
− V
− 0 .5 V
ω
Slope = 1V/s
Figure 4.24(b): Input and ideal output waveforms using a sine wave and square wave,
respectively. R1CF = 1 second and VooT = 0 V assumed.
When vin = 0 the integrator works as an open-loop amplifier. This is because the capacitor
( )
CF acts as an open circuit X CF = ∞ to the input offset voltage Vio . In other words, the
input offset voltage Vio and the part of the input current charging capacitor CF produce
the error voltage at the output of the integrator. Therefore, in the practical integrator
shown in figure below, to reduce the error voltage at the output, a resistor RF limits the
low-frequency gain and hence minimizes the variations in the output voltage.

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RF
R1 CF
+
+ VCC
vin ~
− 1
∫
t
− vo = − vin dt
+ R1C F o
− VCC with VooT = 0 V
RL
ROM = R1
Figure 4.25: Practical integrator.
The frequency response of the basic integrator is shown in figure below.

Gain(dB)
100 Basic integrator response
80
60 RF Ideal response of practical

dB integrator
R1
40 ⎡⎛ R F ⎞ ⎤
⎢⎜⎜ ⎟⎟dB − 3dB ⎥
⎣⎝ R1 ⎠ ⎦
20 Actual response of practical
integrator
0 Relative
f 10 f 102 f 103 f 104 f 105 f frequency(Hz)
= fa = fb
Figure 4.26: Frequency response of basic and practical integrators.

1 1
fa = and f b = .
2πR F C F 2πR1C F

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In this figure f b is the frequency at which the gain is 0 dB and is given by
1
fb = .
2πR1C F
The frequency response of the practical integrator is shown in the figure by a dashed line.
In this figure, f is some relative operating frequency and for frequencies f to f a the
gain RF / R1 is constant. However after f a gain decreases at a rate 20 dB / decade . In
other words, between f a and f b the circuit acts as an integrator. The gain-limiting
1
frequency f a is given by fa = .
2πR F C F
Generally, the value of f a and in turn R1CF and RF CF values should be selected such
that f a < fb . For example if f a = f b /10 then RF = 10 R1 . In fact, the input signal will be
integrated properly if the time period T of the signal is larger than or equal to RF CF . That
1
is, T ≥ RF CF where RF C F = .
2π f a
4.10 The Differentiator
Figure below shows the differentiator or differentiation amplifier. As its name implies,
the circuit performs the mathematical operation of differentiation: that is the output
waveform is the derivative of the input waveform. The differentiator may be constructed
from a basic inverting amplifier if an input resistor R1 is replaced by capacitor C1 .
C1 v RF
2
•
iC iF
+ I B2 ≈ 0 + VCC
vin ~ − dv in
− v1 v o = − R F C1
• + dt
− VCC
RL
ROM = R F I B1 ≈ 0
Figure 4.27: Basic differentiator Circuit.

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The expression for the output voltage can be obtained from Kirchhoff’s current equation
written at node v2 as follows: iC = I B + iF ⇒ iC ≅ iF ∵ IB ≅ 0
d v −v
⇒ C1 ( vin − v2 ) = 2 o ⇒ vo = − RF C1
dvin
dt RF dt
The gain of the circuit (RF / X C1 ) increases with increase in frequency at a rate
of 20 dB / decade . This makes the circuit unstable. Also, the input impedance X C1
decreases with increase in frequency, which makes the circuit very susceptible to high
frequency noise. When amplified, this noise can completely override the differentiated
output signal. This frequency response of the basic differentiator is shown in figure
below. Gain (dB)
80
60
Closed-loop response of basic
40 differentiator: 20 dB/decade
Closed-loop response of practical
20 differentiator: -differentiator:
• 20 dB/decade
0 •
fa fb
−20
f 10 f 102 f 103 f 104 f f c 105 f
Relative frequency (Hz)
Figure 4.28: Frequency response.
In this figure, f a is the frequency at which the gain is 0 dB and is given
1
by f a = . Both the stability and the high-frequency noise problems can be
2π RF C1
corrected by the addition of two components: R1 and CF as shown in figure below. This
circuit is a practical differentiator.

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CF
R1 C1 RF
+
+ VCC
vin ~
− dvin
− vo = − RF C1
+ dt
− VCC if R F C1 > R 1C1 or R F C F
RL
ROM
Figure 4.29(a): Practical differentiator.
The frequency response is shown in figure by a dashed line. From frequency f to f b the
gain increases at 20 dB / decade . However after f b the gain decreases at 20 dB / decade .
This 40 dB / decade change in gain is caused by the R1C1 and RF CF combinations. The
gain-limiting frequency f b is given by
1
fb = where R1C1 = RF CF .
2πR1C1
Thus, R1C1 and RF CF help to reduce significantly the effect of high-frequency input,
amplifier noise, and offsets. Above all, it makes the circuit more stable by preventing the
increase in gain with frequency. Generally, the value of f b and in turn R1C1 and RF CF
values should be selected such that
f a < fb
1 1 1
where fa = , fb = = .
2πR1C1 2π R1C1 2π RF CF
The input signal will be differentiated properly if the time period T of the input signal is
larger than or equal to RF C1 . That is,
T ≥ RF C1 .

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Figure below show the sine wave and square wave inputs and resulting differentiated
outputs, respectively, for the practical differentiator.
v in
v in
1V
1V
0V t ( sec )
0V t ( ms )
π 2π 3π 4π
− 1V
− 1V
1 ms
v in
v in
0 . 94 V
2V
t ( ms )
0V
π 2π 3π 4π 0V t ( sec )
− 0 . 94 V
T − 2V
1 ms
Figure 4.29(b): Input and ideal output waveforms using a sine wave and square
wave, respectively.
A workable differentiator can be designed by implementing the following steps:

1. Select f a equal to the highest frequency of the input signal to be differentiated. Then,
assuming a value of C1 < 1 μ F , calculate the value of RF .
2. Choose f b = 20 f a and calculate the values of R1 and CF so that R1C1 = RF CF .

The differentiator is most commonly used in wave shaping circuits to detect high-
frequency components in an input signal and also as a rate-of-change detector in FM
modulators.

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4.11 Active Filters

An electric filter is often a frequency-selective circuit that passes a specified band of
frequencies and blocks or attenuates signals of frequencies outside this band. Filters may
be classified in a number of ways:
1. Analog or digital 2. Passive or active
3. Audio (AF) or radio frequency (RF)
Analog filters are designed to process analog signals, while digital filters process analog
signals using digital techniques. Depending on the type of elements used in their
construction, filters may be classified as passive or active. Elements used in passive
filters are resistors, capacitors, and inductors. Active filters, on the other hand employ
transistors or op-amps in addition to the resistors and capacitors. The type of element
used dictates the operating frequency range of the filter. For example, RC filters are
commonly used for audio or low frequency operation, whereas LC or crystal filters are
employed at RF or high frequencies.
An active filter offers the following advantages over a passive filter:
1. Gain and frequency adjustment flexibility. Since the op-amp is capable of providing a
gain, the input signal is not attenuated as it is in a passive filter. In addition, the active
filter is easier to tune or adjust.
2. No loading problem. Because of the high input resistance and low output resistance of
the op-amp, the active filter does not cause loading of the source or load.
3. Cost. Typically, active filters are more economical than passive filters. This is because
of the variety of cheaper op-amps and the absence of inductors.
The most commonly used filters are:
1. Low-Pass filter 2.High-Pass filter 3.Band-Pass filter
4. Band-Reject filters 5. All-Pass filter
All of these filters uses an op-amp as the active element and resistors and capacitors as
the passive element. Figure below shows the frequency response characteristics of the
five types of filters. The ideal response is shown by dashed curves, while the solid lines
indicate the practical filter response.

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vo vo
Gain, Gain,
v in v in
Ideal response Ideal response

1 1
Pass Pass
band band
Stop band Stop band
Frequency Frequency
fH fL
vo (a ) (b )
Gain,
v in vo
Gain,
v in
Ideal response
Ideal response
1
1
Stop Pass Stop
0 . 707 band Pass Stop Pass
band band 0 . 707 band band band
fL Frequency fL Frequency
fC fH fC fH
(c ) (d )
Voltage
v in v
o
−1
φ (d )
Figure 4.30: Frequency response of the major active filters. (a) Low pass. (b) High pass.
(c) Band pass. (d) Band rejects. (e) Phase shift between input and output volages of an
all-pass filter.

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4.11.1 First-Order Low-Pass Filter

Figure below shows a first-order low-pass Butterworth filter that uses an RC network for
filtering. Note that the op-amp is used in the non-inverting configuration; hence it does
not load down the RC network. Resistors R1 and RF determine the gain of the filter.
R1 v2 RF
Voltage gain
+ VCC
− - 20 db/decade
R v1 vo AF
+
− VCC
+ RL
vin ~
C 0.707A F
−
Pass band Stop band
Frequency
fH
(a ) (b )
Figure 4.31: First-order low-pass Butterworth filter. (a) Circuit. (b) Frequency response.
According to the voltage-divider rule, the voltage at the non-inverting terminal (across
− jX C 1
capacitor C) is v1 = vin where j = − 1 and − jX C = .
R − jX C j 2π fC
vin ⎛ R ⎞
On simplifying, we get v1 = and the output voltage vo = ⎜1 + F ⎟ v1 .
1 + j 2π fRC ⎝ R1 ⎠
⎛ R ⎞ vin v AF
That is, vo = ⎜1 + F ⎟ ⇒ o =
⎝ R1 ⎠ 1 + j 2π fRC vin 1 + j ( f / f H )
vo R
Where = gain of the filter as a function of frequency, AF = 1 + F = pass-band gain of
vin R1
1
the filter, f = frequency of the input signal and f H = = high cutoff frequency of
2πRC
the filter.

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The gain magnitude and phase angle equations of the low-pass filter can be obtained as
follows:
vo AF ⎛ f ⎞
= and φ = − tan −1 ⎜⎜ ⎟⎟ in degrees.
1+ ( f / fH )
vin 2
⎝ fH ⎠
The operation of the low-pass filter can be verified from the gain magnitude equation:
vo
1. At very low frequencies, that is, f < f H , ≅ AF
vin
vo A
2. At f = f H , = F = 0.707 AF
vin 2
vo
3. At f > f H , < AF .
vin
4.11.2 Second-Order Low-Pass Filter

A stop-band response having a 40 dB / decade roll-off is obtained with the second-order
low-pass filter. A first-order low-pass filter can be converted into a second-order type
simply by using an additional RC network, as shown in figure below.
R1 v RF
2
+ VCC Voltage gain

−
R2 R3 v1 vo
4 0 d B /d ecad e
+
AF
− VCC
+ RL
vin ~ C2 C3
− 0.707A F
fH
(a ) (b ) Frequency
Figure 4.32: Second-order low-pass Butterworth filter.

(a) Circuit. (b) Frequency response.

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Second-order filters are important because higher-order filters can be designed using
them. The gain of the second-order filter is set by R1 and RF while the high cutoff
1
frequency f H is determined by R2 , C2 , R3 and C3 as follows: f H = .
2π R2 R3C2C3
Furthermore, for a second-order low-pass Butterworth response, the voltage gain

magnitude equation is: vo AF
=
1+ ( f / fH )
vin 4
RF
where AF = 1 + = pass-band gain of the filter, f = frequency of the input signal (Hz)
R1
4.11.3 First-Order High-Pass Filter
A first-order high-pass filter is formed from a first-order low-pass type by interchanging
components R and C. Figure below
shows a first-order high-pass R1 v2 RF
Butterworth filter with a low cutoff
+ VCC
frequency of f L . This is the
−
C v1 vo
frequency at which the magnitude of +
the gain is 0.707 times its pass-band − VCC
+ RL
value. Obviously, all frequencies vin ~ R
−
higher than f L are pass-band
frequencies, with the highest
Figure 4.33: First-order high-pass filter.
frequency determined by the closed-
loop bandwidth of the op-amp.
⎛ R ⎞ j 2π fRC v ⎡ j ( f / fL ) ⎤ RF
vo = ⎜1 + F ⎟ vin ⇒ o = AF ⎢ ⎥ where AF = 1 + .
⎝ R1 ⎠ 1 + j 2π fRC vin ⎣1 + j ( f / f L ) ⎦ R1
vo A ( f / fL ) 1
Hence the magnitude of the voltage gain is = F where f L =
vin 1+ ( f / fL )
2 2πRC

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4.11.4 Second-Order High-Pass Filter

As in the case of the first-order filter, a second-order high-pass filter can be formed from
a second-order low-pass filter simply by interchanging the frequency determining
resistors and capacitors. Figure below shows the second-order high-pass filter.
R1 v2 RF
+ VCC
−
C2 C3 v1 vo
+
− VCC
+ RL
vin ~
− R2 R3
Figure 4.34: Second order high-pass Butterworth filter.
The voltage gain magnitude equation of the second-order high-pass filter is as follows:
v0 AF
= .
1+ ( fL / f )
vm 4
where AF = pass-band gain for the second-order Butterworth response,
f = frequency of the input signal (Hz), f L = low cutoff frequency (Hz).
Since second-order low-pass and high-pass filters are the same circuits except that the
positions of resistors and capacitors are interchanged, the design and frequency scaling
procedures for the high-pass filter are the same as those for the low-pass filter.
1
fL =
2π R2 R3 C 2 C 3

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4.11.5 Band-Pass Filter

A wide band-pass filter can be formed by simply cascading high-pass and low-pass
sections and is generally the choice for simplicity of design and performance. The order
of the band-pass filter depends on the order of the high-pass and low-pass filter sections.
First-order H.P.F First-order L.P.F
R1′ R F′
R1 RF
+ VCC
+ VCC −
− R′ vo
C +
+ − VCC
− VCC RL
+ C′
vin ~ R
−
Figure 4.35: First-order wide band pass filter circuit.
4.11.6 All-Pass Filter

As the name suggests, an all-pass filter passes all frequency components of the input
signal without attenuation, while providing predictable phase shifts for different
frequencies of the input signal.
R1 R F = R1
+ VCC
− 1 − j 2πfRC
+ R vo = vin
vin ~ + 1 + j 2πfRC
− − VCC
RL
C
Figure 4.36 (a): All-pass filter circuit.

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The output voltage vo of the filter can be obtained by using the superposition theorem.
− jX C 1
v0 = −vin + vin (2) where X C = .
R − jX C jωC
⎛ 2 ⎞ v0 1 − 2 j 2π fRC
⇒ v0 = vin ⎜ −1 + ⎟ ⇒ =
⎝ j 2π fRC + 1 ⎠ vin 1 + j 2π fRC
v0
Above equation indicates that the amplitude of is unity; that is, v0 = vin throughout
vin
the useful frequency range, and the phase shift between v0 and vin is a function of input
frequency f the phase angle φ is given by
⎛ 2πfRC ⎞
φ = −2 tan −1 ⎜ ⎟
⎝ 1 ⎠
where φ is in degrees, f in hertz, R in ohms, and C in farads. This equation is used to
find the phase angle φ if f , R, and C are known. Figure below shows a phased shift of
90o between the input vin and output v0 . That is v0 lags vin by 90o. For fixed values of
R and C, the phase angle φ changes from 0 to -180o as the frequency f is varied from
0 to ∞. In all-pass filter circuit, if the positions of R and C are interchanged, the phase
shift between input and output becomes positive. That is, output v0 leads input vin .
Voltage
v in vo
vp
0 o o o o o Phase angle (deg)

90
o
180 270 360 450 540
− vp
φ=
o
90
Figure 4.36(b): phase shift between input and output voltages.

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4.12 Oscillators
Basically, the function of an oscillator is to generate alternating current or voltage
waveforms. More precisely, an oscillator is a circuit that generates a repetitive waveform
of fixed amplitude and frequency without any external input signal. Oscillators are used
in radio, television, computers, and communications. Although there are different types
of oscillators, they all work on the same basic principal.
4.12.1 Oscillator Principles
An oscillator is a type of feedback amplifier in which part of the output is fed back to the
input via a feedback circuit. If the signal fed back is of proper magnitude and phase, the
circuit produces alternating currents or voltages. To visualize the requirements of an
oscillator, consider the block diagram of figure shown below. Here the input voltage is
zero ( vin = 0 ). Also, the feedback is positive because most oscillators use positive
feedback. Finally, the closed-loop gain of the amplifier is denoted by Av rather than AF .
Summing junction
v in = 0 vd Amplifier vo Amplifier
Σ Av vo
Av
Output Output
⇒
Feedback Feedback
circuit circuit
vf B vo vf B
Figure 4.37: Oscillators block diagram.
In the block diagram of above figure, v d = v f + vin , vo = Av v d , v f = Bv o
v0 Av
Using these relationships, the following equation is obtained: =
vin 1 − Av B
However, vin = 0 and vo ≠ 0 implies that Av B = 1 .
Expressed in polar form, Av B = 1 or total phase shift Av B = 0 0 or 360 0 .

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Two requirements for oscillations:

(1) The magnitude of the loop gain Av B must be at least 1, and
(2) The total phase shift of the loop gain Av B must be equal to 0o or 360o.
For instance, as indicated in figure, if the amplifier causes a phase shift of 180o, the
feedback circuit must provide an additional phase shift of 180o so that the total phase
shift around the loop is 360o. The waveforms shown are sinusoidal and are used to
illustrate the circuit’s action. The type of waveform generated by an oscillator depends on
the components in the circuit and hence may be sinusoidal, square, or triangular. In
addition, the frequency of oscillation is determined by the components in the feedback
circuit.
Oscillator Types
Because of their widespread use, many different types of oscillators are available. These
oscillator types are summarized in Table given below.
Table: OSCILATOR TYPES
Type of components Frequency of Types of waveform
used oscillator generated
RC oscillator Audio frequency (AF) Sinusoidal
LC oscillator Radio frequency (RF) Square wave
Crystal oscillator Triangular wave
Sawtooth wave, etc
Frequency Stability
The ability of the oscillator circuit to oscillate at one exact frequency is called frequency
stability. Although a number of factors may cause changes in oscillator frequency, the
primary factors are temperature changes and the change in dc power supply. Temperature
and power supply changes cause variations in the op-amp’s gain, in junction capacitances
and resistances of the transistors in an op-amp, and in external circuit components. In
most cases these variations can be kept small by careful design, by using regulated power
supplies, and by temperature control.

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Q1. Consider a voltage follower circuit with vo = Vm sin ωt volts. Then slew rate of
operational amplifier is:
Vm ω V
(a) (b) Vmω V
10 6 μs μs
Vm ω V Vm ω V
(c) (d)
10 6 s 1012 s
Q2. An op-amp has CMRR = 100dB , differential gain AD = 10 and common mode
voltage applied to it is 2mV . Then the value of common mode output voltage is:
(a) 0.2 μV (b) 0.4 μV (c) 0.6 μV (d) 0.8 μV
Q3. An amplifier has a voltage gain of 500 and input impedance 20 kΩ , without any
feedback. Now a negative feedback with β = 0.1 is applied. Its gain and input impedance
with feedback will respectively be
(a) 9.8 and 392 Ω (b) 9.8 and 1020 kΩ
(c) 50 and 1020 kΩ (d) 50 and 2 kΩ
Q4. The circuit shown in figure is used as an
+
+
vin ~ −
− RL
(a) Oscillator (b) High voltage gain amplifier

(c) Buffer amplifier (d) Square wave generator
Q5. An op-amp connected in voltage follower mode has following open loop
parameters: A = 200000 , Ri = 2M Ω , Ro = 75Ω . Then the input and output impedance of
the voltage follower circuit is:
(a) 200M Ω , 75Ω (b) 200GΩ , 75Ω
(c) 400GΩ , 375μΩ (d) 400GΩ , 375mΩ

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Q6. Consider the amplifier circuit comprising of the two op-amps A1 and A2 as shown in
the figure. 1M
R
− 10 K
−
Vi + r
A1 + V0
A2
If the input ac signal source has an impedance of 50 k Ω , which of the following

statement is true?
(a) A1 is required in the circuit because the source impedance is much less than r
(b) A1 is required in the circuit because the source impedance is much less than R
(c) A1 can be eliminated from the circuit without affecting the overall gain
(d) A1 is required in the circuit if the output has to follow the phase of the input signal
Q7. In an inverting operational amplifier, the voltage gain is 20 dB . The resistance R1
R2
is 20 kΩ . The value of feedback resistor R2 will be
(a) 2 MΩ
R1 −
(b) 200 kΩ o o
+
(c) 20 kΩ
(d) 2 kΩ
Q8. For the circuit shown in figure, the R R
+ Va •
output voltage V0 is: R
+ Vb •
−
(a) Va + Vb − Vc − Vd • Vo
(b) Va − Vb + Vc − Vd + Vc •
R +
R
+ Vd •
(c) − Va − Vb + Vc + Vd
R
(d) − Va − Vb − Vc − Vd

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Q9. For the circuit shown in figure the

R1 6kΩ
output is Vo = −V1 + 2V2 − 3V3 . The values of + V1 •
R2
resistances R1 , R2 and R3 is − V2 •
R3
+ V3 •
(a) R1 = 6kΩ, R2 = 2kΩ, R3 = 3kΩ −
• Vo
(b) R1 = 2kΩ, R2 = 6kΩ, R3 = 3kΩ +
(c) R1 = 6kΩ, R2 = 3kΩ, R3 = 2kΩ
(d) R1 = 6kΩ, R2 = 3kΩ, R3 = 3kΩ

0.01μF
Q10. In the op-amp circuit shown in the figure, Vi is a
sinusoidal input signal of frequency 10 Hz and Vo is

10K
1K
the output signal. The magnitude of the gain is close to Vi −
the values Vo
+
(a) 4 (b) 9
(c) 15 (d) 20
Q11. In order to obtain a solution of the third order differential equation, involving
voltages v(t ) , an OP-AMP circuit would require at least
(a) two integrator and one adder
(b) three integrator only
(c) three differentiator and one adder
(d) three integrator and one adder.
Q12. The circuit for which the input and output waveforms are shown below is
V1
(a) Clipping circuit
input o t
(b) Integrator
(c) Differentiator − V1
(d) Schmitt trigger V2
output o t
− V2

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Q13. The input given to an ideal OP-AMP differentiator circuit is

V
V0
t0 t
The correct output of the differentiator circuit is

(a) V (b) V
V0 V0
t0 t t0 t
(c) V (d)
V
V0
V0
t t0 t
t0
Q14. A low pass filter is formed by a resistance R and a capacitance C . At the cut-off
1
angular frequency ωC = the voltage gain and the phase of the output voltage relative
RC
to the input voltage respectively are
1 1
(a) and 45o (b) and −45o
2 2
1 1
(c) and −90o (d) and 90o
2 2

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Q15. The input to a lock-in amplifier has the form Vi (t ) = Vi sin (ω t + θ i ) where Vi , ω , θ i
are the amplitude, frequency and phase of the input signal respectively. This signal is
multiplied by a reference signal of the same frequency ω , amplitude Vr and phase θ r . If
the multiplied signal is fed to a high pass filter of cut-off frequency ω , the final output
signal is
1
ViVr cos(θ i − θ r )
VV
(a) (b) i r
cos ( 2ω t + θi + θ r )
2 2
⎛1 ⎞
(c) ViVr sin (θ i − θ r ) i r cos ⎜ ω t + θ i + θ r ⎟
(d) VV
⎝2 ⎠

Q16. An op-amp has differential gain AD = 10 . Common mode voltage applied to it
is 2mV and corresponding output voltage is 0.2μV . Then the value of CMRR ( dB )
is………..
feedback. Now a negative feedback is applied and its gain and input impedance are
9.8 and 1020 kΩ respectively. Then the feedback ratio is ………
Q18. In the following circuit, for the output voltage to be V0 = ( −V1 + V2 / 3) the ratio
R
R1 / R2 is……….
+ VCC
R
V1 −
Vo
+
V2
R1
- VCC
R2

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Q19. For the circuit given below V1 = 0.2 V and V2 = 0.8 V . Assume that the operational
amplifier is ideal then the output voltage V is………….
10k
1k
−
Α→∞
2k
+
+ +
V1 V2 V
2k
− −
Q20. For the given circuit the frequency above which the gain will decrease by 20 dB
per decade is………. kHz 10 kΩ
vin +
vo
1000 pF
− 1 kΩ
2 kΩ

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Multiple Select type Questions (MSQ)
feedback. Now a negative feedback with β = 0.1 is applied. Its gain and input impedance
with feedback will respectively be
(a) 10 (b) 20 (c) 500 kΩ (d) 1000 kΩ
Q22. Consider a Low Pass (LP) and a High Pass (HP) filter with cut-off frequencies f LP
and f HP , respectively, connected in series or in parallel configurations as shown in the
Figures A and B below.
ΗΡ
fHP
Input ΗΡ LΡ Output
(A) (B) Input Output
fHP fLP
LΡ
fLP
Which of the following statements are correct?
(a) For f HP < f LP , A acts as a Band Pass filter
(b) For f HP > f LP , A stops the signal from passing through
(c) For f HP < f LP , B stops the signal from passing through
(d) For f HP > f LP , B acts as a Band Reject filter
Q23. Which of the following statements are true regarding first order low pass Op-amp
filter (where AF is passband gain, f H is cutoff frequency and f is operating frequency)
vo AF
(a) The magnitude of gain =
1+ ( f / fH )
vin 2
vo AF
(b) The magnitude of gain =
1+ ( fH / f )
vin 2
⎛ f ⎞
(c) The phase angle (φ ) is − tan −1 ⎜ ⎟
⎝ fH ⎠
⎛f ⎞
(d) The phase angle (φ ) is − tan −1 ⎜ H ⎟
⎝ f ⎠

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Q24. Which of the following statements are true regarding first order high pass Op-amp
filter (where AF is passband gain, f L is cutoff frequency and f is operating frequency)
vo AF
(a) The magnitude of gain =
1+ ( f / fL )
vin 2
vo AF
(b) The magnitude of gain =
1+ ( fL / f )
vin 2
⎛ f ⎞
(c) The phase angle (φ ) is + tan −1 ⎜ ⎟
⎝ fL ⎠
⎛f ⎞
(d) The phase angle (φ ) is + tan −1 ⎜ L ⎟
⎝ f ⎠
Q25. Which of the following are true regarding oscillators?
(a) Loop gain ( Av .B ) of the circuit must be atleast 1
(b) Total phase shift must be 0 0 or 360 0

(c) It uses positive feedback
(d) It uses negative feedback

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Solution
(MCQ)
Ans.1: (a)
Ans.2: (a)
⎛ A ⎞ ⎛ 10 ⎞ 10
CMRR (in dB ) = 20 log10 ⎜⎜ D ⎟⎟ ⇒ 100 = 20 log10 ⎜⎜ ⎟⎟ ⇒ = 10 5 ⇒ ACM = 10 − 4
⎝ ACM ⎠ ⎝ ACM ⎠ ACM
VoCM
∵ ACM = = 10−4 ⇒ VoCM = 10−4 × 2 × 10−3V = 0.2 μV
VCM
Ans.3: (b)
A 500 500
AF = = = = 9.8 and
1 + AB 1 + 500 × 0.1 51
RiF = Ri (1 + AB ) = 20k × (1 + 500 × 0.1) = 1020 kΩ
Ans.4: (c)
Ans.5 :( c)
1 + AB ≈ A ⇒ RiF = Ri (1 + AB ) = Ri A = 2 × 10 6 × 2 × 10 5 = 400GΩ
R0 75
RoF = = = 375μΩ
A 2 × 10 5
Ans.6: (c)
A1 can be eliminated from the circuit without affecting the overall gain
Ans.7: (b)
⎛V ⎞ ⎛V ⎞ V R
Gain(in dB ) = 20 log10 ⎜⎜ 0 ⎟⎟ ⇒ 20 = 20 log10 ⎜⎜ 0 ⎟⎟ ⇒ 0 = − 2 = 10 ⇒ R2 = 200kΩ
⎝ Vin ⎠ ⎝ Vin ⎠ Vin R1
Ans.8: (c)
R R ⎛ R ⎞ R/2 ⎛ R ⎞ R/2
Vo = V0 a + V0 b + V0 c + V0 d = − Va − Vb + ⎜1 + ⎟ Vc + ⎜ 1 + ⎟ Vd
R R ⎝ R/2⎠ R + R/2 ⎝ R/2⎠ R+ R/2
⇒ Vo = −Va − Vb + Vc + Vd

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Ans.9: (c)
⎛ 6k 6k 6k ⎞ 6k 6k 6k
Vo = V01 + V02 + V03 = −⎜⎜ V1 − V2 + V3 ⎟⎟ = × −V1 + × V2 + × −V3
⎝ R1 R2 R3 ⎠ R1 R2 R3
Ans.10: (b)
v0 X RF X C RF RF RF
=− C =− =− =−
vin R1 R1 ( X C + RF ) R1 (1 + RF / X C ) R1 (1 + jωCRF )
v0 RF / R1 10 /1 10 v
= = = ⇒ 0 ≈ 10
1 + ( 2π fCRF ) 1 + 4π f C RF −
vin 2 2 2 2 2
1 + 4 ×10 × 100 × 10 × 10
16 8 vin
Ans.11: (d)
Ans.12: (c)
Ans.13: (d)
Ans.14: (b)
v0 XC 1 1
= = =
vin R + X C + 1 1 + jωCR
R
XC
1 v 1 1 1 − j 450
At ω = ωC = ⇒ 0 == = = e
RC vin 1+ j 2e j 450
2
Ans.15: (b)
V = Vr sin (ω t + θ r ) × Vi sin (ω t + θ i ) =
Vi V r
[cos(θ i − θ r ) − cos(2ω t + θ i + θ r )]
2
VV
Output of high pass filter = i r
cos ( 2ω t + θi + θ r )
2

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(NAT)
Ans.16: 100
0.2 × 10 −6 ⎛ 10 ⎞
ACM = −3
= 10 − 4 , AD = 10 ⇒ CMRR(in dB) = 20 log10 ⎜ −4 ⎟ = 100 dB
2 × 10 ⎝ 10 ⎠
Ans.17: 0.1
A 500
AF = ⇒ 9.8 = ⇒ B = 0.1 and
1 + AB 1 + 500 × B
RiF = Ri (1 + AB ) ⇒ 1020 kΩ = 20k × (1 + 500 × B ) ⇒ B = 0.1 .
Solution.18: 5
⎛ R ⎞ ⎛ R2 ⎞
When V2 = 0, v01 = −V1 when V1 = 0, v02 = ⎜1 + ⎟ ⎜⎜ ⎟⎟ V2
⎝ R ⎠ ⎝ R1 + R2 ⎠
V2 R2 1 R
Since V0 = −V1 + ⇒ 2⋅ = ⇒ 1 =5
3 R1 + R2 3 R2
Ans.19: (c)
10 ⎛ 10 ⎞ 2 11
V = V01 + V02 = − V1 + ⎜1 + ⎟ × V2 = −10V1 + V2 = −2 + 4.4 = +2.4
1 ⎝ 1 ⎠ 2+2 2
Ans.20: 15.9
1
fH = = 15.9 kHz ≈ 16 kHz
2π RC
(MSQ)
Ans.21: (a), (d)

A 500 500
AF = = = = 9.8 and
1 + AB 1 + 500 × 0.1 51
RiF = Ri (1 + AB ) = 20k × (1 + 500 × 0.1) = 1020 kΩ
Ans.22: (a), (b) and (d)

Ans.23: (a), (c)
Ans.24: (b), (d)
Ans.25: (a), (b) and (c)

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5. Digital Electronics
5.1 Number System
5.1.1 Decimal Numbers
Decimal number system uses ten digits, that is, a system with base of ten. Each of the ten
decimal digits, 0 through 9, represents the certain quantity. The position of each of the
digits in the decimal number indicates the magnitudes of the quantity represented and can
be assigned a “weight”.
The value of a decimal number is the sum of the digits times their respective column
weights.
Example : 23 = 2 × 10 + 3 × 1 = 20 + 3 = 23
The digit 2 has a weight of 10, as indicated by its position, and the digit 3 has a weight of
1, as indicated by its position.
Example : 568 = 5 × 100 + 6 × 10 + 8 × 1 = 500 + 60 + 8 = 568
The digit 5 has weight of 100, the digit 6 has a weight of 10, and the digit 8 has a weight
of 1.
5.1.2 Binary Numbers
The binary system with its two digits is a base-two system. The two binary digits (bits)
are 1 and 0. The position of the 1 or 0 in a binary number indicates its “weight”. The
weight of each successively higher position (to the left) in a binary number is an
increasing power of two.
Highest decimal number with n bits = 2n − 1
(
For instance, with two bits we can count from 0 through 3 22 − 1 = 3 . )
Binary-to-Decimal Conversion
The value of a given binary number in terms of its decimal equivalent can be determined
by adding the products of each bit and its weight. The right-most bit is the least
significant bit (LSB) in a binary number and has a weight of 20 = 1 . The weights increase
by a power of two for each bit from right to left.

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Example : Convert (1101101)2 to decimal number.

Solution:
Binary weight: 26 25 24 23 22 21 20
Weight value: 64 32 16 8 4 2 1
Binary number: 1 1 0 1 1 0 1
1× 64 + 1× 32 + 0 × 16 + 1× 8 + 1× 4 + 0 × 2 + 1× 1 = 64 + 32 + 0 + 8 + 4 + 0 + 1 = 10910
The binary numbers we have seen so far have been whole numbers. Fractional number
can also be represented in binary by placing bits to the right of the binary point, just as
fractional decimal digits are placed to the right of the decimal point.
The column weights of a binary number are
2n...23 22 2120.2−12−2...2− n
binary po int ↵
This indicates that all the bits to the left of the binary point have weights that are positive
powers of two and to the right of the binary point have weights that are negative powers
of two.
Example : Convert (0.1011) 2 to decimal number.
Binary weight: 2−1 2−2 2−3 2−4

Weight value: 0.5 0.25 0.125 0.0625
Binary number: 1 0 1 1
1× 0.5 + 0 × 0.25 + 1× 0.125 + 1× 0.0625 = 0.5 + 0 + 0.125 + 0.0625 = 0.687510 .
Example : Convert (11101.011) 2 to decimal number.

Solution:
(16 + 8 + 4 + 1) . ( 0.25 + 0.125) = 29.37510

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Binary addition and subtraction

0 + 0 = 0, 0 + 1 = 1
There are four basic rules for adding binary digits:
1 + 0 = 1, 1 + 1 = 102
0 − 0 = 0, 1 − 1 = 0
There are four basic rules for subtracting binary digits:
1 − 0 = 1, 102 − 1 = 1.
1's and 2's compliments
The 1's compliment of a binary number is found by simply changing all 1's to 0's and all
0's to 1's. The 2's compliment of a binary number is found by adding 1 to the 1's
compliment.
Example:
Binary Number 1's compliment 2's compliments

10101 01010 01011
10111 01000 01001
111100 000011 000100
Decimal-to-Binary Conversion
In a repeated division-by-2 process we begin by dividing decimal number by 2 and then
dividing each resulting quotient by 2 until there is a 0 quotient. The remainders generated
by each division form the binary number. The first remainder to be produced is the least
significant bit (LSB) in the binary number.
Example: Convert decimal number 12 to binary number.
Step 1 Step 2 Step 3 Step 4
6 3 1 0
2 12 2 6 23 21
12 6 2 0
0 0 1 1
LSB MSB
→ (1100) 2

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Converting Decimal Fraction to Binary

In a repeated multiplication-by-2 process we begin by multiplying decimal number by 2
and then multiplying each resulting fractional part by 2 until the fractional product is
zero. The carry generated by each multiplication form the binary number. The first carry
produced is the most significant bit (MSB) in the binary number.
Example: Convert decimal number 0.3125 to binary number.
Step 1 0.3125 × 2 = 0.625 → carry = 0 ( MSB)
Step 2 0.625 × 2 = 1.25 → carry = 1
Step 3 0.25 × 2 = 0.50 → carry = 0
Step 4 0.50 × 2 = 1.00 → carry = 1( LSB)
→ (0.0101) 2
5.1.3 Octal Numbers

The octal number system is composed of eight digits, which are
0, 1, 2, 3, 4, 5, 6, 7 .
Counting in octal is the same as counting in decimal, except any number with an 8 or a 9
is omitted. It is a system with base eight.
Octal-to-Decimal Conversion
Since the octal number system has a base of eight, each successive digit position is an
increasing power of eight, beginning in the right-most column with 80 . The evaluation of
an octal number in terms of its decimal equivalent is accomplished by multiplying each
digit by its weight and summing the products.
Example : Convert (2374)8 to decimal number.
Solution: Octal weight: 83 82 81 80
Weight value: 512 64 8 1
Octal number: 2 3 7 4
2 × 512 + 3 × 64 + 7 × 8 + 4 × 1 = 127610

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The octal numbers we have seen so far have been whole numbers. Fractional octal
numbers are represented by digits to the right of the octal point.
The column weights of an octal number are
8n...83828180.8−18−2...8− n
This indicates that all the digits to the left of the octal point have weights that are positive
powers of eight and to the right of the octal point have weights that are negative powers
of eight.
Example : Convert (0.325)8 to decimal number.
Solution:
Octal weight: 8−1 8−2 8−3

Weight value: 0.125 0.015625 0.001953
Octal number: 3 2 5
3 × 0.125 + 2 × 0.015625 + 5 × 0.001953 = 0.41601510
Decimal-to-Octal Conversion
In a repeated division-by-8 process we begin by dividing decimal number by 8 and then
dividing each resulting quotient by 8 until there is a 0 quotient. The remainders generated
by each division form the octal number. The first remainder to be produced is the least
significant digit (LSD) in the octal number.
Example: Convert decimal number 359 to octal number.
Solution: Step 1 Step 2 Step 3
44 5 0
8 359 8 44 85
32 40 0
39 4 5
32
7
LSD MSD
→ (547)8

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Octal-to-Binary Conversion
The primary application of octal numbers in is in the representation of binary numbers.
Since it takes only one octal digit to represent three bits, octal numbers are much easier to
“read” than binary numbers.
Because all three-bit binary numbers are required to represent the eight octal digits, it is
very easy to convert from octal to binary and from binary to octal. The octal number
system is often used in digital systems, especially for input/output applications.
Each octal digit is represented by three bits as indicated:
Octal Digit Binary
0 000
1 001
2 010
3 011
4 100
5 101
6 110
7 111
To convert an octal number to a binary number, simply replace each octal digit by the
appropriate three bits. This is illustrated in the following example.
Example: Convert each of the following octal numbers to binary
(a) 138 (b) 258 (c) 478 (d) 1708 (e) 7528 (f) 52768
(g) 37.128
Solutions:
(a) 138 (b) 258 (c) 478 (d) 1708 (e) 7528
0010112 0101012 1001112 001111 000 2 111101 010 2
(f) 52768 (g) 37.128
101010 111110 2 011111.0010102

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Binary-to-octal Conversion
Conversion of a binary number to an octal number is also a straightforward process.
Beginning at the binary point, simply break the binary number into groups of three bits
and convert each group into the appropriate octal digit.
Example: Represent each of the following binary numbers by its octal equivalent:
(a) 1101012 (b) 1011110012 (c) 10111001102 (d) 1001101.10112
Solutions:
(a) 110101 2 (b) 101111 001 2 (c) 001011100110 2 (d) 001001101101100 2
6 58 5 7 18 1 3 4 68 1 1 5 5 48

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5.1.4 Hexadecimal Numbers

The hexadecimal system has a base of sixteen; that is, it is composed of 16 digits and
characters. Many digital systems process binary data in groups that are multiples of four
bits, making the hexadecimal number very convenient because each hexadecimal digit
represents a four-bit binary number (as listed in Table 2-2).
Ten digits and six alphabetic characters make up this number system. A subscript 16
indicates a hexadecimal number.
Decimal Binary Binary

0 0000 0
1 0001 1
2 0010 2
3 0011 3
4 0100 4
5 0101 5
6 0110 6
7 0111 7
8 1000 8
9 1001 9
10 1010 A
11 1011 B
12 1100 C
13 1101 D
14 1110 E
15 1111 F

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Binary-to-Hexadecimal Conversion
Converting a binary number to hexadecimal is a straightforward procedure. Simply break
the binary number into four-bit groups starting at the binary point, and replace each group
with the equivalent hexadecimal symbol.
Example: (a) 11001010010101112 (b) 1111110001011010012
(c) 1110011000.1112
Solution:
(a) 1100101001010111 2 (b) 00111111 000101101001 2
C Α 5 716 3 F 1 6 916
(c) 001110011000 .1110
3 9 8 Ε 16
Hexadecimal-to-Binary Conversion
To convert from a hexadecimal number to a binary number, reverse the process and
replace each hexadecimal symbol with the appropriate four bits.
Example: Determine the binary numbers for the following hexadecimal numbers:
(a) 10A416 (b) CF8316 (c) 974216 (d) D2E.816
Solutions:
(a) 10Α 416 (b) CF83 16
10000101001002 11001111 1000 0011
(c) 9742 16 (d) D2E.8 16
1001 0111 0100 00102 1101 01001110 10002

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Hexadecimal-to-Decimal Conversion
One way to evaluate a hexadecimal number in terms of its decimal equivalent is first
convert from binary decimal. The following example illustrates this procedure.
Example: Convert the following hexadecimal numbers to decimal.
(a) 1C16 (b) A8516
Solutions:
(a) 1C16 00111002 = 24 + 23 + 22
= 16 + 8 + 4
0001 11002
= 2810.
(b) A8516 1010100001012
1010100001012 = 211 +29 + 27 + 22 + 20
1010 1000 01012
= 2048 + 512 + 128 + 4 + 1
= 269310
Another way to convert a hexadecimal number to its decimal equivalent is by multiplying
each hexadecimal digit by its weight and then taking the sum of these products. The
weights of a hexadecimal number are increasing powers of 16 (from right to left). For a
four-digit hexadecimal number the weights are
163 162 161 160
4096 256 16 1
The following example shows this conversion method.
Example: Convert (a) E 516 and (b) B 2 F 816 to decimal.
Solutions:
(a) E 516 = E ×16 + 5 × 1 = 14 × 16 +5 × 1 = 224 +5 = 22910
(b) B 2 F 816 = B × 4096 + 2 × 256 + F × 16 + 8 × 1

= 11× 4096 + 2 × 256 + 15 × 16 + 8 × 1
= 45056 + 512 + 240 + 8=4581610

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Decimal to Hexadecimal number formed by the reminders of each division. This is

similar to the repeated division-by-2 for decimal-to-binary conversion and repeated
division-by-8 for decimal-to-octal conversion.
Example: Convert 65010 to hexadecimal by repeated division by 1610.
Solution: Hexadecimal Remainder

40
16 650
64
10 Α (LSD)
2
16 40
32
8 8
0
16 2
0
2 2 (MSD)
Therefore, 65010 = 28A16.

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5.2 Logic Gates

5.2.1 The Inverter
The inverter (NOT circuit) performs a basic logic function called inversion or
complementation. The purpose of the inverter is to change one logic level to opposite
level. In terms of bits, it changes a 1 to a 0 and a 0 to a 1.
Standard logic symbols for the inverter are shown in figure 5.1. Figure 5.1 (a) and (b)
show the distinctive shape symbols and parts (c) and (d) show the rectangular outline
symbols. In this text, distinctive shape symbols used; however, the rectangular outline
symbols are commonly found in industry publications, and you should become familiar
with them as well.
(a) Distinctive shape symbols (b) Distinctive shape symbols

with negation indicators. with polarity indicators.
1 1
1 1
(c) Rectangular outline symbols (d) Rectangular outline symbols

with negation indicators. with polarity indicators.
Figure 5.1: Standard logic symbols for the inverter.

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The Negation and Polarity Indicators

The negation indicator is a “bubble” ( ) appearing on the input or output logic element,
as shown in figure 5.1 (a) and (c). When appearing on the input, bubble means that an
external 0 produces an internal 1. When appearing on output, the bubble means that an
internal 1 produces an external 0. Typically inputs are on the left of a logic symbol and
outputs are on the right.
The polarity indicator is a “triangle” ( ) appearing on the input or output of a logic
element, as shown in figure 5.1 (b) and (d). When appearing on input, it means that an
external LOW level produces an internal HIGH. When appearing on the output, it means
that an internal HIGH produces an external LOW level. Either indicator (bubble or
triangular) can be used on both distinctive shape symbols and rectangular outlines as
indicated. The placement of the negation or polarity indicator does not imply a change in
the way an inerter operates.
Because positive logic (HIGH = 1, LOW = 0) is used in this text, both indicators are
equivalent and can be interchanged. However, we will use primarily the negation
indicator (bubble) throughout this text to represent an inversion.
The placement of the bubble on the input or output of a logic element is determined by
the active state of the input signal (pulse or level). The active state is the state (1 or 0)
when the signal is considered to be present on the input. When the active state of the
input is a 0, the bubble is placed on the input. When the active output state is a 0, the
bubble is placed on the output.
Inverter Operation
When a HIGH level is applied to an inverter input, a LOW level will appear on its output.
When a LOW level is applied to its input, a HIGH will appear on its output. This
operation is summarized in Table given below, which shows the output for each possible
input in terms of levels and bits. These tables are called truth tables.

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TABLE: Inverter Truth Tables
Input Output Input Output

HIGH LOW 0 1
LOW HIGH 1 0
Pulsed Operation
Figure 5.2 shows the output of an inverter for a pulse input where t1 and t 2 indicate the
corresponding points on the input and output pulse waveforms. Note that when the input
is LOW, the output is HIGH, and when the input is HIGH, the output is LOW, thereby
producing an inverted output pulse.
HIGH (1) HIGH (1)

LOW (0) LOW (0)
t1 t2 t1 t2
Figure 5.2: Inverter with pulse input.
Example: A pulse waveform is applied to an inverter as shown in figure 5.2. Determine

the output waveform corresponding to the input.
Solution: The output waveform is exactly opposite to the input (inverted) at each point.
Input
Output
5.2.2 The AND Gate

The AND gate performs logical multiplication, more commonly known as the AND
function. The AND gate is composed of two or more inputs and a single output, as
indicated by the standard logic symbols shown in figure 5.3. Inputs are on the left and the
output is on the right in each symbol. Gates with two and four inputs are shown;
however, an AND gate can have any number of inputs greater than one.

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Α Α &
X X
Β Β
&
(a) Distinctive shape (b) Rectangular outline
Figure 5.3: Standard logic symbols for the AND gate showing two and four inputs.
Logical Operation of the AND Gate

The operation of the AND gate is such that the output is HIGH only when all of the
inputs are HIGH. When any of the inputs are LOW, the output is LOW.
The truth table can be expanded for any number of inputs.
Table: Truth table for a two-input AND gate.
Inputs Outputs
A B X
0 0 0
0 1 0
1 0 0
1 1 1
Pulsed Operation
Α 1 0 1 1 0
Α
X
Β
Β 1 1 1 0 0
t1 t2 t3 t4 t5
X 1 0 1 0 0
Figure 5.4: Example of pulsed AND gate operation.

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5.2.3 The OR Gate

The OR gate performs logical addition, more commonly known as the OR function. An
OR gate has two or more inputs and one output, as indicated by standard logic symbols
shown in figure 5.5 where OR gates with two and four inputs are illustrated.
Α Α ≥1
X X
Β Β
≥1
Figure 5.5: Standard logic symbols for the OR gate showing two and four inputs.
Logical Operation of the OR Gate

The operation of the OR gate is such that a HIGH on the output is produced when any of
the inputs are HIGH. The output is LOW only when all of the inputs are LOW.
Table: Truth table for a two-input OR gate.
Inputs Outputs
A B X
0 0 0
0 1 1
1 0 1
1 1 1
Pulsed Operation
A 1 0 0 1
0 A
B 1 1 0 X
B
t1 t2 t3 t4
X 1 1 0 1
Figure 5.6: Example of pulsed OR gate operation.

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5.2.4 The NAND Gate

The term NAND is a contraction of NOT-AND and implies an AND function with a
complemented (inverted) output. A standard logic symbol for a two-input NAND gate
and its equivalency to an AND gate followed by an inverter are shown in figure 5.7(a). A
rectangular outline representation is shown in part (b).
Α Α A &
X X X
Β Β B
(a) Distinctive shape, two-input (b) Rectangular outline, two-input
NAND gate with negation indicators NAND gate with polarity indicator
Figure 5.7: Standard NAND gate logic symbols.

The NAND gate is very popular logic function because it is a “universal” function; that
is, it can be used to construct an AND gate, an OR gate, an inverter, or any combination
of these functions. Truth table for a two-input NAND gate.
Inputs Outputs
A B X
0 0 1
0 1 1
1 0 1
1 1 0
Pulsed Operation
(a) A
Α
X
Β
B
Bubble indicates an
active-LOW output
(b) X
A and B are both HIGH.

Therefore X is LOW.

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5.2.5 The NOR Gate

The term NOR is a contraction of NOT-OR and implies an OR function with inverted
output. A standard logic symbol for a two input NOR gate and equivalent OR gate
followed by an inverter are shown in figure 5.8(a). A rectangular outline symbol is shown
in part (b).
Α Α Α ≥1
X X X
Β Β Β
(a) Distinctive shape, two-input (b) Rectangular outline,

NOR gate and its NOT/OR two-input NOR gate
equivalent with negation indicators with polarity indicator
Figure 5.8: Standard NOR gate logic symbols.
The NOR gate, like the NAND, is a very useful logic gate because of universal property.
Truth table for a two-input gate
Inputs Outputs
A B X
0 0 1
0 1 0
1 0 0
1 1 0
Figure 5.8: Standard NOR gate logic symbols.
Pulsed Operation:
A
(a) A
X
B B
(b) X

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5.2.6 OR Gate (Positive Logic and Negative Logic)

OR Gate (Positive logic)
The truth table can be verified for the circuit shown in figure 5.9.
A B Y
In positive logic V (1) means HIGH voltage and V ( 0 ) means LOW
0 0 0
voltage. When both inputs have LOW voltage output will be V ( 0 ) i.e. 0 1 1
LOW voltage. When any of the input is HIGH, the output will be 1 0 1
V (1) i.e. HIGH as explained below. 1 1 1
V1 = V (1) and V2 = V (0)
Α RS RF I
V1 I RS
R L >> RS
Β RS Vr
• Y
V2
V0 ≡ V0
V1 = V (1)
RL RL
V R = V (0 )
V R = [V (0 )]
Positive Logic
(b)
Figure 5.9: (a) Positive logic OR Gate (b) Equivalent circuit for analysis.
Apply K.V.L.
V (1) − V (0) − Vr V (1) − V (0)
−V (1) + Vγ + V (0) + I ( RL + RF + RS ) = 0 ⇒ I = ≈
RL + RF + RS RL
∵ RL >> RF + RS and Vγ is very small.
V0 = IRL + V (0) = [V (1) − V (0) ] + V (0) ⇒ V0 = V (1) .
Similarly when any of the input is 1 output is V (1) . When both inputs are 0 output
is V (0) .

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OR Gate (Negative logic)

The truth table can be verified for the circuit shown in figure 5.10. In negative logic V (1)
means LOW voltage and V ( 0 ) means HIGH voltage. When both inputs have HIGH
voltage ⎡⎣V ( 0 ) ⎤⎦ output will be V ( 0 ) . When any of the input is LOW ⎡⎣V (1) ⎤⎦ , the output
will be V (1) i.e. LOW as explained below.
V1 = V (1) , V2 = V ( 0 )
Α RS
V1
R L >> RS RF I
RS RS
Β I
V2 • Y
V0 Vr
≡ V0
RL
RL V1 = V (1)
V R = [V (0 )]
Negative Logic V R = V (0 )
(a ) (b )
Apply K.V.L.
V (0) − V (1) − Vr V (0) − V (1)
−V (0) + Vr + V (1) + I ( RL + RF + RS ) = 0 ⇒ I = ≈
RL + RF + RS RL
∵ RL >> RF + RS and Vγ is very small.
V0 = V (0) − IRL = V (0) − [V (0) − V (1) ] ⇒ V0 = V (1)

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5.1.7 AND Gate (Positive Logic and Negative Logic)
A B Y
0 0 0
0 1 0
1 0 0
1 1 1
Α RS Α RS
V1
R L >> RS V1 R L >> RS
Β RS Β RS
V2 • Y V2 • Y
V0 V0
RL RL
V R = ⎡⎣V (1) ⎤⎦ NegativeLogic V R = ⎡⎣V (1) ⎤⎦

Positive Logic
(a ) (b )
Figure 5.11: (a) Positive logic AND Gate (b) Negative logic AND Gate.
We can easily verify truth table of AND gate by drawing equivalent circuit in each case.

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5.3 Logic Expressions

5.3.1 NOT
The operation of an inverter (NOT circuit) can be expressed with symbols as follows:
If the input variable is called A and the output variable is called X then X = A . This
expression states that the output is the complement of the input, so that if A = 0 , then
X = 1 and if A = 1 , then X = 0 .
Α X = Α
Figure 5.12: The inverter complements an input variable.

5.3.2 AND
The operation of a two-point AND gate can be expressed in equation form as follows:
If one input variable is A , the other input variable is B , and the output variable is X , then
the Boolean expression for this basic gate function is X = AB . Figure 5.13 shows the gate
with the input and output variables indicated.
Α Α
Α Β
X = AB Β X = ABC X = ABCD
Β C C
D
Figure 5.13: Boolean expression for AND functions.
5.3.3 OR
The operation of a two-input OR gate can be expressed in equation form as follows:
If one input is A , the other input is B , and the output is X , then the Boolean expression
is X = A + B . Figure 5.14 shows the gate logic symbol, with input and output variables
labeled.
Α Α
Α Β
X = Α+Β Β X = A+ B+C X = A+ B+C + D
Β C C
D
(a) (b) (c)

Figure 5.14: Boolean expressions for OR functions.

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5.3.4 NAND
The Boolean expression for a two-input NAND gate is X = AB . This expression says that
the two input variables, A and B , are first ANDed and then complemented, as indicated
by the bar over the AND expression.
5.3.5 NOR
Finally, the expression for a two input NOR gate can be written as X = A + B . This
equation says that the two input variables are first ORed and then complemented, as
indicated by the bar over the OR expression.
5.4 Rules for Boolean algebra
Basic rules that are useful in manipulating and simplifying Boolean algebra expressions
are given below:
1. A + 0 = A 4. A.1 = A 7. A. A = A 10. A + AB = A
2. A + 1 = 1 5. A + A = A 8. A. A = 0 11. A + AB = A + B
3. A.0 = 0 6. A + A = 1 9. A = A 12. ( A + B ) . ( A + C ) = A + BC
5.4.1 Demorgan’s Theorems

A.B = A + B
A + B = A .B
These theorems are illustrated by the gate equivalencies and truth tables in figure 5.15.
A B AB A+ B
A A
B AB ≡ A+ B
0 0 1 1
B 0 1 1 1
1 0 1 1
1 1 0 0
A B A+ B A. B
A A 0 0 1 1
A+ B ≡ A .B 0 1 0 0
B B
1 0 0 0
1 1 0 0
Figure 5.15: Gate equivalencies and corresponding truth takes illustrating DeMorgan’s
theorems.
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Applying DeMorgan’s Theorems

The following procedure illustrates the application of DeMorgan’s theorems using a
specific expression: X = A + BC + D E + F ( )
Step1. Break the bar over the entire expression and change the sign ( + to .) between the
terms, A + BC and D E + F : ( ) ⎡ ⎤
X = A + BC . ⎢ D E + F ⎥
⎣ ⎦
( )
Step2. Cancel the double bars over the left term: (⎡
⎣
)⎤
X = A + BC . ⎢ D E + F ⎥
⎦
( )
Step3. Break the bar over the term D E + F ( ) and change the sign (. to + )
between D and (E + F ): ⎡
⎣ ⎝
⎤
X = ( A + BC ).⎢ D + ⎛⎜ E + F ⎞⎟⎥
⎠⎦
( )
Step4. Cancel the double bars over the term E + F : X = ( A + BC ). ⎡⎣ D + E + F ⎤⎦
Example: Apply DeMorgan’s theorems to each expression.
(a) (A + B )+ C ( )
(b) A + B + CD (c) ( A + B)C D + E + F
Solution:
(a) (A + B )+ C = ( A + B ) ⋅ C = ( A + B )C
( ) ( )
(b) A + B + CD = A + B ⋅ CD = (A + B )CD
[ ]
(c) ( A + B)C D + E + F = ( A + B )C D (E + F ) = (A B + C + D )E F

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5.5 Boolean Expressions for Gate Networks

The form of a given Boolean expression indicates the type of gate network it describes.
For example, let us take the expression A ( B + CD ) and determine what kind of logic
circuit it represents. First, there are four variables: A, B, C and D . C is ANDed with D ,
given CD ; then CD is ORed with B , giving ( B + CD ) . Then this is ANDed with A to
produce the final function. Figure 5.16 illustrates the gate network represented by this
particular Boolean expression, A ( B + CD ) .
C
CD
D
B + CD
B
A(B + CD )
A
Figure 5.16: Logic gate implementation of the expression A ( B + CD ) .
There are also certain forms of Boolean expressions that are more commonly used than
others; the two most important of these are the sum-of-products and the product-of-sum
forms.
5.5.1 Sum-of-Product Form
Example: Implement the expression AB + BCD + EFGH with logic gates.
Solution: A AB
B
B
C BCD AB + BCD + EFGH
D
E
F
G EFGH
H
An important characteristic of the sum-of-products form is that the corresponding
implementation is always a two-level gate network; that is, the maximum number of
gates through which a signal must pass in going from an input to the output is two,
excluding inversions.

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5.5.2 Product-of-Sums Form

The product-of-sums form can be thought of as the dual of the sum-of-products. It is, in
terms of logic functions, the AND of two or more OR functions. For instance,
( A + B )( B + C ) is a product-of-sums expression. Several other examples are
( A + B )( B + C + D )
( A + B + C )( D + E + F )
( A + B + C )( D + E + F + G )( A + E + G )
( A + B + C )(D + E + F )(F + G + H )( A + F + G)
Example: Construct the following function with logic gate.

( A + B )( C + D + E )( F + G + H + I )
Solution:
A A+ B
B
C+D+E
C
D ( A + B )(C + D + E )(F + G + H + I )
E
F
G
H F +G+ H + I
I

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5.6 Simplification of Boolean Expressions
5.6.1 Boolean Algebra Techniques

Example: Simplify the expression AB + A ( B + C ) + B ( B + C ) using Boolean algebra
techniques.
Solution: The following is not necessarily the only approach.
Step1. Apply the distributive law to the second and third terms in the expression, as
follows:
AB + AB + AC + BB + BC
Step2. Apply rule 7 ( B.B = B ) : AB + AB + AC + B + BC
Step3. Apply rule 5 ( AB + AB = AB ) : AB + AC + B + BC
Step4. Factor B out of the last two terms: AB + AC + B (1 + C )
Step5. Apply rule 2 (1 + C = 1) : AB + AC + B.1
Step6. Apply rule 4 ( B.1 = B ) : AB + AC + B
Step7. Factor B out of the first and third terms, as follows: B ( A + 1) + AC
Step8. Apply rule 2 ( A + 1 = 1) : B.1 + AC
Step9. Apply rule 4 ( B.1 = B ) : B + AC

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5.6.2 The Karnaugh Map

The Karnaugh map provides a systematic method for simplifying a Boolean expression
and, if properly used, will produce the simplest sum-of-products expression possible.
The map format: The Karnaugh map is composed of an arrangement of adjacent “cells”,
each representing one particular combination of variables in product form. Since the total
number of combinations of n variables and their complements is 2n , the Karnaugh map
consists of 2n cells. For example, there are four combinations of the products of two
variables ( A and B ) and their complements AB , AB, AB and AB . Therefore, the
Karnaugh map must have four cells, with each cell representing one of the variable
combinations, as illustrated in figure 5.17(a). The variable combinations are labeled in
the cells only for purposes of illustration. In practice, the map is actually arranged with
the variables labeled outside the cells, as shown in figure 5.17(b). The variable above a
column of cells applies to each cell in that column.
B B
AB AB A
(a)A B AB A (b)
(a) (b)
Figure 5.17: Format of two-variable Karnaugh map.
Extensions of the Karnaugh map to three and four variables are shown in figure 5.18.
Notice that the cells are arranged such that there is only a single variable change between
any adjacent cells (this is the characteristic that determines adjacency).
C C C D C D CD CD
AB AB
AB AB
AB AB
AB AB
Figure 5.18: Formats for three and four-variable Karnaugh maps.

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Plotting a Boolean Expression

Once a Boolean expression is in the sum-of-products form, you can “plot” it on the
Karnaugh map by placing 1 in each cell corresponding to a term in the sum-of-products
expression. For example, the three-variable expression ABC + ABC + ABC and the four-
variable expression ABCD + ABCD + ABCD + ABCD are plotted on the map as shown in
figure 5.19.
C C C D C D CD CD
AB AB
AB 1 AB 1 1
AB 1 1 AB
AB AB 1 1
Figure 5.19: Examples of plotting a Boolean expression on a Karnaugh map.
Grouping Cells for Simplification

You can group 1s that are in adjacent cells according to the following rules by drawing a
loop around those cells:
1. Adjacent cells are cells that differ by only a single variable (for example ABCD and
ABCD are adjacent).
2. The 1s in adjacent cells must be combined in groups of 1, 2, 4, 8, 16, and so on.
3. Each group of 1s should be maximized to include the largest number of adjacent cells
as possible in accordance with rule 2.
4. Every 1 on the map must be included in at least one group. There can be overlapping
groups if they include noncommon 1s.
Grouping is illustrated by an example in figure 5.20. Notice how the groups are
overlapped to include all the 1s in the largest possible group.

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C D C D CD CD
AB 1 1
AB 1 1 1 1
AB 1 1 1 1
AB 1
Figure 5.20: Example of grouping1s on a four-variable Karnaugh map.

Simplifying the Expression
When all the 1s representing each term in the original Boolean expression are grouped,
the mapped expression is ready for simplification. The following rules apply:
1. Each group of 1s creates a product term composed of all variables that appear in
only one form (uncomplemented or complemented) within the group. Variables
that appear both uncomplemented and complemented are eliminated.
2. The final simplified expression is formed by summing the product terms of all the
groups.
For example, in figure 5.21, the product term for the eight-cell group is B because the
cells within that group contain both A and A , C and C and D and D , so these variables
are eliminated. The four-cell group contains B, B , D and D , leaving the product
term AC . The two-cell group contains B and B , leaving ACD as the product term. The
resulting Boolean expression is the sum of these product terms: B + AC + ACD .
C D C D CD CD AC
AB 1 1
AB 1 1 1 1
AB 1 1 1 1 B
AB 1 AC D
Figure 5.21: This plotted Boolean expression simplifies to B + AC + ACD .

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Example: Minimize the expression X = ABC + ABC + ABC + ABC + ABC

Solution: Notice that this expression is already in a sum-of-products form from which
the 1s can be plotted very easily, as shown in figure. Four of the 1s appearing in adjacent
cells can be grouped. The remaining 1 is absorbed in an overlapping
group. The group of four 1s produces a single variable term B . This C C
is determined by observing that within the group B is the only A B 1 1
variable that does not change from cell to cell. The group of two 1s 1 AC
AB
produces a two-variable term, AC . This is determined by observing
AB
that within the group, the variables A and C do not change from one B
AB 1 1
cell to the next. To get the minimized function, the two terms that are
produced are summed (ORed) as X = B + AC .
Example: Reduce the following four-variable function to its minimum sum-of-products

X = ABCD + ABCD + ABCD + ABCD + ABCD
form:
+ ABCD + ABCD + ABCD + ABCD + ABCD
If all variables and their complements were available, this function would take ten-4-
input AND gates and one 10-input OR gate to implement.
Solution: A group of eight 1s can be factored as shown in figure because the 1s in the
outer columns are adjacent. A group of four
1s is formed by the “wrap-around” adjacency CD CD CD CD
of the cells to pick up the remaining two 1s. A B 1 1 1
The minimum form of the original equation is AB 1 1 BC
X = D + BC . Thus X = D + BC takes one
AB 1 1
2-input AND gate and one 2-input OR gate.
AB 1 1 1
Compare this to the implementation of the
original function.
D

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Example: Reduce the following function to its minimum sum-of-products form:

X = ABCD + ABCD + ABCD + ACD + ABCD
C D C D CD CD
Solution: The function is plotted on the four-
AB 1 1 1 BD
variable map and factored as indicated in figure.
Notice that the four corner cells are adjacent. AB 1
ACD
AB
AB 1 1
X = B D + ACD
Implementing Truth Table Functions
Another use of the Karnaugh map is in implementing logic functions that are specified in
truth table format. Since truth tables normally use 1s and 0s (HIGH and LOWs) to
represent logic states, the format of the Karnaugh map is modified slightly for this
application, as shown in figure 5.22 for two, three and four variables; 1s and 0s are used
to label the cells. The variables represented by the 1s and 0s are specified in the upper left
corner of the map.
B C CD
0 1 0 1 00 01 11 10
A AB AB
0 00 00
1 01 01
11 11
10 10
Figure 5.22: Karnaugh maps with a 1/0 labeling format.

Plotting the truth table
When the output variable on the truth table is a 1, a 1 is placed on the Karnaugh map in
the cell corresponding to the states of the input variables. For example, if the output
variable is a 1 when A = 1 , B = 0 , and C = 1 , then a 1 is placed in the lower right cell of
the three-variable map.

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Grouping and simplification

The previously stated rules apply in grouping the 1s. Variables that are both 1 and 0
within a group are eliminated. If a variable is a 1 in all cells of a group, it appears
uncomplemented in the product term. If a variable is a 0 in all cells of a group, it appears
complemented in the product term.
Example: Implement the logic function specified by the truth table using the Karnaugh
map method. X is the output variable, and A, B and C are the input variables.
Solution: The truth table function is plotted and simplified on the map. The logic gate
implementation for the resulting sum-of-products expression is shown in part (b) of the
figure.
Input Output
A B C X
0 0 0 1
0 0 1 0
0 1 0 0
0 1 1 0
1 0 0 1
1 0 1 0
1 1 0 1
1 1 1 1
C
AB 0 1
Α
00 1
Β
01 X
11 1 1
C
10 1 Β
(a) X = AB + B C (b) Gate implementation of X = AB + B C

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5.6 Universal Gates

5.6.1 The Universal Property of the NAND Gate
The NAND gate can be used to generate the NOT function, the AND function, the OR
function, and the NOR function.
A AB
A • A • AB
B A
(a) A NAND gate used as an inverter (b) Two NAND gates used as an AND gate
A
A • G1
A A • G1
A+ B
G3 A B = A+ B G3 • G4 A+ B
B • G2 B • G2
B B
(c) Three NAND gate used as an OR gate (d) Four NAND gate used as a NOR gate
Figure 5.23: Universal application of NAND gates.
5.6.2 The Universal Property of the NOR Gate

As with the NAND gate, the NOR gate can be used to generate the NOT, AND, OR, and
NAND functions.
A A+ B A+ B
A • A •
B
(a) A NOR gate used as an inverter (b) Two NOR gates used as an OR gate
A
A • G1
A A • G1
A+ B
A + B = AB
G3
G3 • G4 AB
B • G2 B • G2
B B
(c) Three NOR gates used as an AND gate (d) Four NOR gates used as a NAND gate
Figure 5.24: Universal application of NOR gates.

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Pulsed Operation
Example: Determine the output waveform for the circuit in figure (a), with the inputs as
shown.
A
X = A(B + C ) = AB + AC
(a) B A
X
B
C C
( b) X
Solution: X is shown in the proper time relationship to the inputs in figure (b).
Example: Determine the output waveform for the circuit in figure (a) if the input
waveforms are as indicated.
A • A
G2
B •
X = AB + A B
G1 B
G 2 Output
G3
G3 Output
X
Figure (a) Figure (b)
Solution: When both inputs are HIGH or when both inputs are LOW, the output is
HIGH. This is called a coincidence circuit or exclusive-NOR. The intermediate outputs of
gates G2 and G3 are used to develop the final output.

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Q1. A number system’s conversion equation is given below having p integer digits and
q fractional digits:
D = C p −1B p −1 + C p − 2 B p − 2 + ... + C0 B 0 + C−1B −1 + C−2 B −2 + ... + C− q B − q
Which of the following conversions would result by the equation given above?
(a) Binary to decimal only
(b) Hexadecimal to decimal only
(c) Octal to decimal only
(d) Binary to decimal and hexadecimal to decimal
Q2. Find the 2’s complement of binary number (10010) 2 is
(a) (01101) 2 (b) (01110) 2 (c) (01100) 2 (d) (11100) 2
Q3. The decimal equivalent of the Hexadecimal number (1C )16 is
(a) (28)10 (b) (18)10 (c) (38)10 (d) (48)10
Q4. Hexadecimal equivalent of binary number (1100101001010111)2 is
(a) CB57 (b) CB 67 (c) CA57 (d) DA57

Q5. Simplified form of the Boolean expression AB + A + AB is
(a) A (b) B (c) 1 (d) A + B
(
Q6. Simplified form of Boolean expression AB + A B + C + B(B + C ) is )
(a) A + BC (b) C + AB
(c) B + AC (d) B + AC
(
Q7. The simplified form of a logic function Y = A B + C AB + AC is ( ))
(a) AB (b) AB (c) AB (d) AB
Q8. Simplified form of Boolean Expression AB + A(B + C ) + B (B + C ) is
(a) A + BC (b) B + AC (c) C + AB (d) AC

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Q9. Simplified form of Boolean Expression BC + B + B(B + A) is
(a) A + BC (b) B + AC (c) C + AB (d) B + C
Q10. Simplify the Boolean function

Y = ABCD + ABCD + ABCD + ABCD + ABCD + ABCD + ABC D
(a) BD (b) BD + AC
(c) BD + ACD (d) BD + ACD
Q11. Simplify the Boolean function
Y = ABCD + ABCD + ABCD + ACD + ABCD + ABC D
(a) BD (b) BD + AC
(c) BD + ACD (d) BD + ACD
Q12.
Figure (i) Figure (ii)

Figure (i) and (ii) represent respectively,
(a) NOR, NOR (b) NOR, NAND (c) NAND, NAND (d) OR, NAND
Q13. The logic expression for the output Y of the following circuit is
P
Y
Q
(a) P + Q + QR (b) P + Q + QR
(c) P + Q + QR (d) P + Q + QR

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Q14. The logic expression for the output Y of the following circuit is
P
Y
Q
R
S
(a) P + Q + QR + S (b) P + Q + QR + S
(c) P + Q + QR + S (d) P + Q + QR + S
Q15. Which one of the following gives the output Y for the logic diagram shown in the
figure? A •
B •
Y
C
(a) ( A + B + C ) (b) ( A + B) + ( B + C ) + (C + A)
(c) AB + AC + BC (d) AB + AC + BC
Q16. Consider the digital circuit shown below in which the input C is always low (0).
A
B Z
C
(Low)

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The truth table for the circuit can be written as

A B Z
0 0
0 1
1 0
1 1
The entries in the Z column (vertically) are

(a) 1010 (b) 0101 (c) 1111 (d) 1011
Q17. The truth table for the given circuit is
(a) J K Q (b) J K Q
0 0 1 0 0 1
0 1 0 0 1 0
1 0 1 1 0 0
1 1 0 1 1 1
(c) J K Q (d)
0 0 0 J K Q
0 1 1 0 0 0
1 0 0 0 1 1
1 1 1 1 0 1
1 1 0

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Q18. The truth values of the function E realized by the logic circuit shown below for
(i ) A = 1, B = 0, C = 1, D = 0 and ( ii ) A = 0, B = 1, C = 0, D = 1
(a) ( i ) 1 ( ii ) 0
Α Ε
(b) ( i ) 0 ( ii ) 1 Β
(c) ( i ) 0 ( ii ) 0 C
(d) ( i ) 1 ( ii ) 1 D
Q19. Which one of the following gives the simplified Input Output
Boolean expression for Y of the 3–variable given truth A B C Y
0 0 0 1
table?
0 0 1 0
(a) AB + AC 0 1 0 1
0 1 1 0
(b) AB + AC 1 0 0 0
1 0 1 0
(c) AB + AC 1 1 0 1
(d) AB + AC 1 1 1 1
Q20. A half-adder is a digital circuit with two inputs (P, Q ) and two outputs (Sum,
Carry). Then Sum (S ) and carry (C ) are given by
(a) S = PQ + PQ, C = PQ (b) S = PQ + PQ, C = PQ
(c) S = PQ + PQ, C = PQ (d) S = PQ + PQ, C = PQ

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Q21. Decimal equivalent of the binary number (1101101) 2 is…………
Q22. Decimal equivalent of the binary number (11101.011) 2 is……….
Q23. Decimal equivalent of the binary number (0.111) 2 is……….
Q24. Decimal equivalent of the octal number (2374)8 is……….
Q25. Octal equivalent of the decimal number (359)10 is……….
Multiple Select Questions (MSQ)
Q26. The (100110) 2 is numerically equivalent to
(a) (26)16 (b) (36)10 (c) (46)8 (d) ( 38 )10
Q27. If the output (Y ) of the logic circuit shown in the figure is 0, the input could be
A
(a) A = 1, B = 1, C = 1, D = 0
B
(b) A = 1, B = 1, C = 0, D = 0 Y
(c) A = 1, B = 0, C = 1, D = 1 C
D
(d) A = 0, B = 1, C = 1, D = 1
Q28. Which of the following implements same logic output?

(a) AC + ABC + ABC (b) ABC + ABC + AB
(c) AB + AC (d) AB + AC

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Q29. Which of the following circuit satisfy the Boolean expression AB + A B = F

(a)
Α
Β
F
(b) Α
Β
F
(c) Α
Β
F
Α
(d)
Β
F

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Solution
MCQ
Ans.1: (d)
Ans.2: (b)
Ans.3: (a)
Ans.4: (c)
Ans.5: (c)
AB + A + AB = AB + A + AB = AB + A + B = A + B + B = A + 1 = 1
Ans.6: (a)
( ) ( ) (
AB + A B + C + B(B + C ) = AB + A B + C + BC = A B + B + C + BC = A + BC )
Ans.7: (b)
( ( )) ( ( )) (
Y = A B + C AB + AC = A B + C A(B + C ) = A B + C A + BC = AB ( ))
Ans.8: (b)
AB + A(B + C ) + B(B + C ) = AB + AC + B + BC = AB + AC + B = B + AC
Ans.9: (d)
BC + B + B(B + A) = BC + B + AB = BC + B = B + BC = B + C
Ans.10: (b)
CD CD CD CD
AB 1 1 1
AC
AB 1 1
AB
AB 1 1
BD

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Ans.11: (b)
( )
Y = ABCD + ABCD + ABCD + ACD B + B + ABCD + ABC D
CD CD CD CD
AB 1 1 1
AC
AB 1 1
AB
AB 1 1
BD
Ans.12: (c)
Ans.13: (d)
P P+Q
P P + Q + QR
Y
Q QR
Ans.14: (a)
P P+Q
P P + Q + QR P + Q + QR + S
Y
Q QR
S
R
S

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Ans.15: (d)
A • ( A + B ) = AB
B •
(A + C ) = AC
Y
C
(B + C ) = BC
Ans.16: (b)
Z = A.B + (B ⊕ 0 )
Ans.17: (c)
Z = J .K + J .K = K
Ans.18: (c)
Ans.19: (d)
Solution: C
AB 0 1
00 1 AC
01 1
X = AB + AC
11 1 1
10 AB
Ans.20: (c)

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NAT
Ans.21: 109
Binary weight: 26 25 24 23 22 21 20
Weight value: 64 32 16 8 4 2 1
Binary number: 1 1 0 1 1 0 1
1× 64 + 1× 32 + 0 × 16 + 1× 8 + 1× 4 + 0 × 2 + 1× 1 = 64 + 32 + 0 + 8 + 4 + 0 + 1 = 10910
Ans.22: 29.375
(16 + 8 + 4 + 1) . ( 0.25 + 0.125) = 29.37510
Ans.23: 0.875
0. ( 0.5 + 0.25 + 0.125 ) = 0.87510
Ans.24: 1276
Octal weight: 83 82 81 80
Weight value: 512 64 8 1
Octal number: 2 3 7 4
2 × 512 + 3 × 64 + 7 × 8 + 4 ×1 = 127610
Ans.25: 547
Step 1 Step 2 Step 3
44 5 0
8 359 8 44 85
32 40 0
39 4 5
32
7
LSD MSD
→ (547)8

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MSQ
Ans.26: (a), (c), (d)

Ans.27: (b), (c) and (d) Y = A.B ( C + D )
Ans.28: (a), (b) and (d)

(a) Y = AC + ABC + ABC = AC + AB
(b) Y = ABC + ABC + AB = AC + AB
(c) AB + AC
(d) Y = AB + AC
Ans.29: (a), (b) and (c)
(a) AB
Α
Β
F = AB + AB
AB
(b) Α A+ B
Β
F = AB( A + B ) = AB + AB
AB
Α A+ B
(c)
Β
( )
F = A + B ( A + B ) = AB + AB
A+ B
Α AB
(d)
Β
F = AB + AB
AB

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Solid State Physics & Devices
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Solid State physics

1. Crystal Structure……………………………………………………………...…(1-24)
1.1 Space Lattice
1.2 Basis
1.3 Bravais Space Lattice
1.4 Miller Indices in Crystal Lattice
1.5 Density of Crystal
1.5.1 Packing Fraction
2. X-Ray diffraction…………………………………………………………….....(25-31)
2.1 Structure Factor
2.2 Braggs Law
2.3 Methods of X-ray Diffraction
3. Einstein and Debye Theory of Specific Heat…………………………………(32-37)
3.1 Classical Theory
3.2 Einstein Theory of Specific Heat
3.3 Debye Theory of Specific Heat
4. Free Electron Theory of Metals………………………………………………(38-44)
4.1 Fermi Energy
4.2 Electron Specific Heat
4.3 Density of States
5. Origin of Energy Bands…………………………………………………..……(45-49)
5.1 Concept Effective Mass and Holes
6. Elementary Ideas about Dia-, Para- and Ferromagnetism……………..……(50-57)
6.1 Diamagnetism
6.2 Paramagnetism
6.3 Ferromagnetism

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Institute for CSIR‐UGC JRF/NET, GATE, IIT‐JAM, GRE in PHYSICAL SCIENCES
1. Crystal Structure
1.1 Space Lattice
A space lattice is defined as “an infinite array of points in three dimensional space in
which each point is identically located with respect to other”. It is a periodic arrangement
of points arranged in regular manner and having repeat distance in three directions which
are termed as “fundamental lattice vectors”. If at these lattice positions, we place atom, or
group of two, three etc atoms we obtained a crystalline solid.
Let us now consider the case of a two dimensional array of points as shown in figure (i).
A two-dimensional array may have (a) square (b) rectangular array.
• • • • • • • •
• • • • • • • •
• • • • • • • •
b r b r
• • • • • • • •
a a
Figure (i) a = b Figure (ii) a ≠ b
In figure (i) and (ii) a and b are fundamental translational vectors, and r is generated
vector. If points are located such that a = b , the arrangement will be known as square
lattice, if location of the point is such that a ≠ b figure (ii) the arrangement will be called
rectangular lattice.
Translation and Primitive Translation Vector
A three dimensional space lattice may have
1. Cubic array when a = b = c
2. Non-cubic array
a lattice exhibit perfect translational symmetry and relative to an arbitrary chosen origin
at a lattice pint, any other lattice point has the position vector r123 = n1a + n2 b + n3 c
where n1, n2, n3, are arbitrary integers a, b, c are fundamental units of the translational
symmetry.
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Considering first the translational vector a1 and b1 the point R' can be obtained from R
using the translational operator (T = n1a + n2b) given by
T = 0a1 + 1b1
• • • •
• • • •
b2
• •R ' • •
b1
• •R • •
a1 a2
Which containing integer coefficients, thus R' is related to R by the equation

R' = R + T = R + 0a1 + 1b1,
Such translational vector which produced a translational operation containing coefficient
integer coefficient called primitive translation vectors, referring to the second set of
translation vector a2 and b2 the point R' can be obtained from R by using the equation
1 1
R' = R + a 2 + b2
2 2
Which containing non-integral coefficient of a2 and b2 such translation vector for which
the translation operation contains non-integral coefficient are called non-primitive
translation vectors.
Unit cells
The entire lattice structure of a crystal can be
generated by identical blocks known as unit cell. The
unit cell may be a group of ions, atoms or molecules.
The unit cell is the smallest building block or
c
geometric figure from which the crystal is built up by
repeating it in three dimensions as shown below. b
a

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Primitive and Non Primitive Unit Cells
A unit cell can be chosen in a number of ways. The following figure shows two ways of
choosing a unit cell in two dimensions. In the first
way the unit cell contains lattice points only at the
corners. This type of unit cells is called as Primitive
Cells. In the second way the unit cell contains lattice
points in addition to the corners. These are known as
Non Primitive Cells.
PRIMITIVE AND NON PRIMITIVE CELL
Note: The unit cells differ from the primitive cell in
that it is not restricted to being the equivalent of one lattice point. Thus, unit cells may
also be primitive cells, but all the primitive cells need not be Unit Cells.
The unit cell is so-called because the entire lattice can be derived by repeating this cell as
a unit by means of the translations that serve as the unit cell’s edge.
In three dimension there are four type of possible unit cells.
1. Primitive (P-type)
It has lattice point only at corners and each corner is • •
common in eight cells, so each cell represents a single

• •
1
lattice point 8 × = 1 lattice point /unit cell as shown in
8
• •
figure.
• •
2. Body Centered cell (I-type)
It has lattice points at corners as well as at centre of • •
each cell, so each cell has two lattice points per unit
cell. • •
1 •
8 × + 1 = 1 + 1 = 2 lattice point /unit cell. • •
8
• •

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3. Face Centered cell (F-type)

It has a lattice point at corner as well as at centre of each face of the cell as shown in
figure. Ο Ο
Ο
Ο Ο 1 1
Ο 8 × + 6 × = 1 + 3 = 4 lattice point /unit cell.
Ο Ο 8 2
Ο Ο
Ο
Ο Ο
4. Base Centred (C-type)

It has lattice points at corner as well as centre of top and bottom face of cell, it has two
lattice points per unit cell as shown in figure:
Ο Ο
Ο
Ο Ο
1 1
8× + 2× = 1+1 = 2
Ο Ο 8 2
Ο
Ο Ο
Wigner-Seitz Cell
The primitive cell can also be constructed using the following procedure
(i) Connect a given lattice point to all the nearby lattice points.
(ii) Draw normal at the mid point of lines connecting the lattice points.
The smallest volume enclosed by the normal is the required primitive cell, such a cell is
Wigner-Seitz cell

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1.2 Basis
The repeating unit assembly: atom, molecule, ion or radical that is located at each lattice
point is called basis or motif. Every basis is identical in composition, arrangement and
orientation, when the basis is repeated with correct periodically in all directions, it gives
the actually crystal structure, the crystal structural is real, while the lattice is imaginary.
Thus,
Lattice + Basis = Crystal structure
Figure shows the basis representing each lattice point. It is observed from the figure that a
basis consists of three different atoms.
• • • •
• • • •
+ Ο
• • • • Ο
• • • •
Basis Ο
Lattice
Crystal Structure
More precisely we can say that when the space lattice combines with the basis a unit cell
of the crystal is generated, the unit cell will be called ‘monoatomic’ if one atom occupies
a lattice point. When two atoms occupy a lattice point, it will make a diatomic unit cell.
Similarly, the unit cell will be known as multiatomic when too many occupy a lattice
point.
Example: Cu Crystal is a Mono-atomic crystal; NaCl is a diatomic crystal while CaF2 is
a tri-atomic crystal.

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Symmetry Operation
A symmetry operation is that which transforms the crystal to itself, i.e. a crystal remains
invariant under a symmetry operation. These operations are: (i) Translational (ii)
Rotational (iii) Reflection (iv) Inversion.
(i) Translations: The translation symmetry follows from the orderly arrangement of a
lattice. It means that a lattice point r, under lattice translation vector operator T, gives
another point r' which is exactly identical r' = r + T.
(ii) Rotations: A lattice is said to posses the rotation symmetry if its rotation by an angle
θ about an axis (or a point in a two dimensional lattice) transforms the lattice to itself.
Also, since the lattice always remains invariant by a rotation of 2 π, the angle 2π must be
an integer multiple of θ i.e. nθ = 2π the factor n takes integral values and is known as
multiplicity of rotation axis. The possible value of n which are compatible with the
requirement of translation symmetry are 1, 2, 3, 4, 6 only. But 5 fold, 7 fold or higher
order symmetry are not possible.
Example: Hexagonal crystal have 6 fold axis of rotation θ = 360/60 = 60o
Now we can explain why five fold symmetry is not permissible

As we know that the throw of an axis θ = 60 (n fold of the axis) if we consider a regular
pentagon, which has an angle of 108o. As 360o is not an integer multiple of 108o
pentagons can not be made to meet at a point bearing a constant angle to another.
Hence 5 fold symmetry (i.e. a pentagonal lattice) is not possible.
Let us consider the row lattice as shown in figure and place an n fold axis at each lattice
point.
C' Ρ mt Q Β'
θ θ
t Α t Β t t

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Two opposite rotations by an amount Q about two axis produces two new lattice point C'
and B' (and AC' = BB' = t). Therefore, the line joining C' and B' is parallel to the
translation t. C'B' = C'P + PQ + QB'
mt = t cos θ + t + t + t cosθ or mt = t (1 + 2 cos θ)
⎛ m −1⎞ ⎛ m −1⎞
cosθ = ⎜ ⎟ θ = cos −1 ⎜ ⎟ Let m – 1 = N (Integer)
⎝ 2 ⎠ ⎝ 2 ⎠
⎛N⎞ N
θ = cos −1 ⎜⎟ ∴ cosθ = -2≤N≤2 (∵ cosθ varies from 1 to - 1 )
⎝2⎠ 2
2π 360 o
throw of an axis θ = = where n is fold of the axis
n n
360
when N = - 2 cos θ = -1 θ = 180o n= =2
180
360
N=-1 cos θ = -1/2 θ = 120o n= =3
120
360
N=0 cos θ = 0 θ = 90o n= =4
90
360
N=+1 cos θ = 1/2 θ = 60o n= =6
60
360
N=+2 cos θ = + 1 θ = 360o n= =1
360
Therefore, 2, 3, 4, 6 and 1 fold of symmetry axis are possible, 5 fold symmetry and more
than 6 fold is not possible.
(iii) Reflections: A lattice is said to possess reflection symmetry if there exists a plane
(or a line in two dimensions) in the lattice which divide it into two identical halves which
are mirror image of each other. Such a plane is represented by m.
(iv) Inversion: Inversion is a point operation which is applicable to three dimensional

lattice only. This symmetry element implies that each point located at r relative to the
same lattice point. In other words, it means that the lattice possesses a centre of inversion
denoted by 1.

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Symmetry Element of Cubic Lattice

Total symmetry elements is cubic lattice is 23.
The geometric locus about which a group of repeating operation acts is called symmetry
elements. For example, in square lattice axis normal to the plane of paper about which
square is rotated by 900,
1800 and 2700 to preserve
the symmetry is a symmetry
element. In square lattice,
axis in the plane of paper (a ) (b )
and bisecting the opposite
edges of the square which
rotate the square by 1800 to
preserve symmetry is called
(c ) (d ) (e )
another symmetry element.
Similarly the plane across which the reflection occurs is a symmetry element and called a
reflection plane or a mirror etc.
In cubic lattice there are total 13 rotational symmetry elements (3 tetrad axis Fig.c , 4
triad axis Fig d and 6 diad axis Fig e), 9 reflection symmetry elements, a plane of
symmetry parallel to the face of the cube and diagonal to the cube is shown in fig a and
fig b, and there is only 1 inversion symmetry elements.

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1.3 Bravais Space Lattice

There are number of ways in which an actual crystal may be built up and atoms piled
together resulting in a great many crystal structures. But each of the structure consists of
some fundamental patterns repeated at each point of a space lattice. The scheme of
repetitions of a space lattice are very limited in number while the possible crystal
structures are almost unlimited. But it was shown by Bravais that there are 14 different
arrays or networks of lattice in which points can be arranged in space so that each point
has identical surrounding these are known as Bravais Space Lattice.
Bravais Lattice: These are 5 in 2-Dimension and 14 in 3-Dimension
Bravais Lattices in Two-Dimension
The four crystal systems of two-dimensional space are square, rectangular, hexagonal,
and oblique. The rectangular crystal system has two Bravais lattice namely rectangular
primitive and rectangular centred. In all there are five Bravais lattices:
Square Rectangular Centered Rectangular
Oblique
Hexagonal
Figure: Five Bravais Lattice in two dimensions

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a a a
γ γ γ
b b b
(a) Square (b) Rectangula r Primitive (c) Rectangula r Centred

a = b, γ = 9 0 o a ≠ b, γ = 9 0 o a ≠ b, γ = 9 0 o
a a
γ γ
b b
(d) Hexagonal (e) Oblique

a = b, γ = 120 o a ≠ b, γ ≠ 9 0 o
Bravais Lattices in three-dimension: In three dimension Bravais lattice is given as
Crystal System No. Unit Cell Coordinate Description

a≠b≠c
1 Triclinic 1 Primitive
α≠β≠γ
2 Primitive a≠b≠c
2 Monoclinic
α = β = 90° ≠ γ
3 Body Centered
4 Primitive
5 Base Centered a≠b≠c
3 Orthorhombic
α = β = γ = 90°
6 Body Centered
7 Face Centered
8 Primitive a=b≠c
4 Tetragonal
α = β = γ = 90°
9 Body Centered
a=b=c
5 Trigonal 10 Primitive
α = β = γ < 120°, ≠ 90°
a=b≠c
6 Hexagonal 11 Primitive
α = β = 90°, γ = 120°
12 Primitive
a=b≠c
7 Cubic 13 Body Centered α = β = γ = 90°
14 Face Centered

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Lattice Parameters
To completely illustrate the crystal structure, the basic minimum parameters required are:
(1) The inter atomic or intermolecular distance in x, y and z direction (a, b and c).
(2) The angles (α , β andγ) between the x and y, y and z and z and x axes.
The angle between the x and y axes is taken as α , the angle between the y and z axes is
taken as β, angle between the Z and x axes is taken as γ are called the crystal parameters.
Therefore, the acceptable way to study structure of crystals is in terms of inter-
lattice distances and the inter-planar angles, i.e. in terms of the crystal parameters.
Line Indices in a Crystal Lattice
While dealing with a crystal system, it is necessary to refer to the crystal planes, and
directions of the straight lines joining the lattice points in a space lattice. A notation
system which uses a set of three integers (n1, n2 & n3) is adopted to describe both the
positions of planes or directions within the lattice.
[111] C
B
b
A
a
Direction of a Line in a Lattice
A resultant vector R which joins Lattice points A and B can be represented by an

Equation.
R = n1 a +n2 b +n3 c , If n1= n2 = n3 =1, then R = a + b + c

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1.4 Miller Indices in Crystal Lattice

The crystal lattice may be regarded as made up of an aggregate of a set parallel
equidistance planes. For a given lattice, the lattice planes can be chosen in different ways.
Miller devised a scheme for indexing lattice planes by integers. These indices are known
as the miller indices of the lattice planes.
The steps in the determination of miller indices of a plane are illustrated with the help of
figure. z
3c
2c
c
a x
2a 3a
b
2b
3b
y
Step:
1) Determination the co-ordinate of the intercepts made by the plane along the three
crystallographic axes (x, y, z)
For example: x y z
2a 3b c
pa qb rc
with p=2 q=3 r=1
2) Express the Intercepts as multiples of the unit cell dimensions, or lattice parameters
along axes
2a 3b c
i.e.
a b c
2 3 1
3) Get the reciprocals of these numbers
1/2 1/3 1/1

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4) Reduce these reciprocals to the smallest set of Integer numbers and enclosed them in
bracket
6 x 1/2 6 x 1/3 6 x 1/1
3 2 6
In general it is denoted by (hkl), (326)
Hence, the miller indices are the three smallest possible integers which have the same
ratios as the reciprocal of the intercepts of the plane concerned on the three axes.
Important Points
(1) A zero miller indices indicate that the plane is parallel to the corresponding crystal
axis, eg: (130) means the plane is parallel to the z-axis (001) means the plane is parallel
to the x and y-axis. Figure shows the miller indices (100), (110), (111).
z z z
x x x
(100) (110) (111)

y y y
2) A negative miller indices shows that the plane (hkl ) cuts the x-axis on the negative
side of the origin, eg (100)

3) Miller indices represent a family of parallel planes. (200) and (100) are parallel planes.
z
(200) (100)
y
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4) {} brackets are used to represent all sets of a family of planes. Ex: {100} represents
(100), (010), (001) and (100) , (010) , (001)
5) When the integers used in the miller indices contain more than one digit, the indices
must be separated by commas for clarity Ex: (3, 11, 13)
Example: Obtain the Miller indices of a plane which intercepts at – a, b/2, 3c in a simple
cubic unit cell.
Solution:
i) x y z
a b/2 3c
a b/2 3c
ii)
a b c
1 1/2 3
iii) 1 2 1/3
iv) 3x1 3x2 3 x 1/3
Miller indices are (361)
Example: A plane makes intercepts of 1, 2 and 3 Å on the crystallograph i.e. axes of an

orthorhombic crystal with a : b : c = 3 : 2 : 1. Determine the miller indices of this plane.
Example: The miller indices of a plane in a simple cubic lattice crystal are (123). Get the
co-ordinates of the plane
a
Solution: x × 1 = a or x=
1
b
y × 2 = b or y=
2
c
z × 3 = c or z =
3
Thus, the co-ordinates of the plane are a, b/2, c/3.

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Inter-planar Spacing ( d hkl )
To get the inter-planar distance, consider a plane ABC with Miller indices (hkl). In the
reference frame, draw a normal to the plane from the origin. Let OP is the normal to the
plane ABC. Let angle POA = α’, and POB = β’ and POC =γ’ be the angles made by the
normal to the plane with the x, y and the z directions. OP = d is the interplanar distance
Then, from the figure,
Z
Cos α = ON/OA = d/x
Cos β = ON/OB = d/y
C
Cos γ = ON/OC = d/z
But from the definition of Millers incise derived in the P Y
z
earlier section, B
d
h = a/x therefore, x = a/h γ β y
k = b/y therefore, y=b/k O α
l = c/z therefore z= c/l x
A
Writing the values of x, y and z in the above X
trigonometric equations we get,
OP d OP d OP d
Cos α = = , Cos β = = , Cos γ = =
OA a / h OB b / k OC c / l
From solid geometry, Cos2 α + cos2 β + Cos2 γ =1
Substituting the values of the trigonometric relations we get
h2d 2 k 2d 2 l 2d 2 2 ⎡h k2 l2 ⎤
2
+ + = 1 ⇒ d ⎢ a 2 b2 + c 2 ⎥ = 1
+
a2 b2 c2 ⎣ ⎦
2 1
⇒ d hkl =
⎡h2
k2 l2 ⎤
⎢ 2 + + ⎥
⎣a b2 c2 ⎦

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1
Then, the inter-planar distance‘d’ is given by d hkl = 1/ 2
⎡ h2 k 2 l 2 ⎤
⎢ 2 + 2 + 2⎥
⎣a b c ⎦
a
case I: Cubic crystal a = b = c d hkl =
h + k2 + l2
2
1
case II: tetragonal a=b≠c d hkl =
h2 + k 2 l 2
+ 2
a2 c
1
case III: orthorhombic a ≠ b ≠ c d hkl =
h2 k 2 l 2
+ +
a2 b2 c2

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1.5 Density of Crystal

Density is a macroscopic property. Basically it is the mass per unit volume. In case of
crystals, mass of atoms packed in a conventional unit cell per unit volume of the cell
gives the density of the crystal.
Mass of atoms in the unit cell m
Density of a crystal = ρ = =
Volume of the unit cell V
Here m is the mass of atoms packed in the conventional unit cell of the crystal. V is the
volume of the unit cell. Mass of atoms packed in the conventional unit cell of the crystal.
V is the volume of the unit cell. Mass of an atom in the structure is given by the ratio of
the atomic weight or Molecular weight (M) to the Avogadro number (NA). Mass of atoms
contained in the conventional unit cell is then the number of atoms in the unit cell times
the mass of an atom. If there are neff atoms in the conventional unit cell, then, the mass of
atoms in the unit cell is given by
neff M
m=
NA a
From density equation, mass of atoms in the unit cell in terms of the density of the
crystal is given by m = ρV
neff M
ρ=
NAV
From this equation, the density of the crystal is
neff M
ρ=
N AV
(kg / m )
3
In case of a cubic lattice the volume of the unit cell V = a3

neff M
Therefore ρ =
N Aa 3
(kg / m )
3
1/ 3
⎛ neff M ⎞
The lattice constant a = ⎜⎜ ⎟⎟ A0
⎝ N Aρ ⎠

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1.5.1 Packing Fraction

The packing of atoms in a unit cell of the crystal structure of a material is known as
atomic packing.
Atomic packing fraction (APF) is defined as the ratio of the volume of the atoms per unit
cell to the volume of the unit cell.
volume of atomic per unit cell
APF =
volume of the unit cell
(1) Simple Cubic (SC): In a simple cubic structure, the space lattice is cubic. Atoms are
placed at all lattice locations. Therefore, an atom at a lattice location will be in contact
with all its six nearest neighbors. Thus the co-ordination number for a simple cubic
structure is N=6. In a simple cubic structure, the lattice constant is the cube edge of the
conventional unit cell. Thus the lattice constant is the distance between the centers of two
neighboring atoms. That is the lattice constant a = 2r, where r is the atomic radius. The
atoms at the lattice locations are shared by eight unit cells. Each atom at the lattice
location of the unit cell contributes (1/8) to the unit cell.
The number of atoms contained in a unit cell in the structure is given by the
number of lattice locations in the unit cell multiplied by the contribution of the atom at
each location. The effective number of atoms in a unit cell of the simple cubic structure is
given by
1 1 1 1 • •
neff = × nc + × n f + 1 × ni ⇒ neff = × 8 + × 0 + 1× 0 = 1
8 2 8 2
and r = a/2
n eff × volume of each sphere • •
APF =
volume of each cell
r
4π ⎛ a ⎞
3
a
1× ⎜ ⎟
3 ⎝2⎠ π
APF = 3
= = 0.52 = 52%
a 6

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The parameters describing the structure of a simple cubic structure are:
1 Co-ordination Number N=6

2 Number of atoms in a unit n=1
cell
3 Atomic radius R
4 Lattice constant r = 2r
5 Volume of a unit cell V = a3
6 Volume of an atom (4/3) π r3
(2) Body Centered Cubic (BCC): In body centered cubic structure, the space lattice is
cubic. Atoms are placed at all lattice locations and there will be an additional atom at the
body center of the cubic unit cell. In this structure, the atoms stacked along the body
diagonal of the cubic unit cell are in contact. That is, the atom at the body center of the
unit cell will be in contact with all other atoms at the cubic lattice locations of the unit
cell. Each atom in the structure will have eight nearest neighbors. Thus, the co-ordination
number for a body centered cubic structure is N = 8. In a body centered cubic structure,
the lattice constant (a), is the cube edge of the conventional unit cell.
The effective number of atoms in a unit cell of the bcc is E F
given by
Α Β
1 1
neff = × 8 + × 0 + 1× 1 = 2
8 2
a
a 3
neff = 2 and r = Η G
4
a
3
4π ⎛a 3⎞ D
a C
2× ⎜ ⎟
3 ⎜ 4 ⎟
APF = ⎝ ⎠ = π 3 = 0.68 = 68%
3
a 8

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The parameters describing the structure of a body centered cubic structure are :
1 Co-ordination Number N=8

cell
3 Atomic radius r
4 Lattice constant a =(4 / 3 ) r
6 Volume of an atom a = (4/3) π
r3
(3) Face Centered Cubic (FCC): In a face centered cubic structure, the space lattice is
cubic. The conventional unit cell consists of eight small cube lets. Atoms are placed at
alternate lattice locations. The atoms stacked along the face diagonal of the cubic unit cell
are in contact. The atom at any lattice location of the unit cell will have twelve nearest
neighbors. The effective number of atoms in a unit cell of the fcc is given by
1 1
neff = × 8 + × 6 + 1 × 0 = 4
8 2 p
a 2 p
neff = 4 and r= p
4
3 p
4π ⎛a 2⎞ A
4× ⎜ ⎟
3 ⎜ 4 ⎟
ΑΡF = ⎝ ⎠ = π = 0.74 = 74%
3
a 3 2
The parameters describing the structure of a face centered cubic structure are :
1 Co-ordination Number N =12

cell
3 Atomic radius r
4 Lattice constant a =(4 / 2 )
r
6 Volume of an atom a = (4/3) π
r3

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(4) Diamond Cubic (DC): Diamond is the crystalline form of carbon. The structure
consists of the periodic stacking of carbon atoms in its crystalline state.
A conventional unit cell of structure consists of eight
cubic primitive cells. On the basis of the positions of the carbon atoms in the unit cell
they are classified as first kind and second kind only for the sake of convenience.
Otherwise they are the same carbon atoms. The carbon atoms placed at the FCC positions
of the conventional unit cell are the first kind of carbon atoms. Another set of carbon
atoms occupy the body centered positions in the primitive cubic cells in the structure. The
second type of carbon atoms are placed at the body centers of the alternate cubic
primitive cells. These carbon atoms independently form another FCC structure.
Therefore, diamond crystal can be regarded as a structure produced by the penetration of
one type of carbon atoms forming FCC structure in to the other FCC structure, formed by
the second kind of carbon atoms, through a distance equal to three fourth the body
diagonal.
If the locations of the atoms in a diamond structure is seen in the primitive part of
the unit cell (one of the eight cubelets), they look like a tetrahedra. In these tetrahedra,
one atom at the center is bonded to three others in the primitive cell. Periodic stacking of
the tetrahedral structure also produces the diamond crystal.
Q
1/ 2
1
4
c R
c P
1/ 4
1/ 2

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The distance between the two carbon atoms place on the cube edge of the
conventional unit cell is the lattice constant and it is, a = 3.567 Au for diamond crystal.
This can be treated as the graphical representation of the crystal structure.
The crystal structure can also be illustrated in terms of the co-ordinates of the atoms
in the structure. To write the co-ordinates of the carbon atoms in the structure, an
orthogonal co-ordinate system is considered. The origin of the co-ordinate system is fixed
at one of the carbon atoms. With this co-ordinate system the co-ordinates of the atoms in
the structure are shown above.
The effective number of atoms in a unit cell of the diamond cubic is given by
1 1 1/ 2
neff = × 8 + × 6 + 1 × 4 = 8 o o
8 2
a 3 3/ 4 1/ 4
neff = 8 r=
8 1/ 2 1/ 2
3
o
4π ⎛a 3⎞
8× ⎜ ⎟
3 ⎜ 8 ⎟ 1/ 4 3/ 4
ΑΡF = ⎝ ⎠ = π 3 = 0.34 = 34% (DC)
3
a 16
o o
1/ 2
Atoms Co-ordinates
(0 0 0); (1 0 0); (1 0 1); (0 0 1); (1/2 0 1/2)
Carbon atoms (1/2 1/2 0); (1 1/2 1/2); (1/2 1/2 1); (0 1/2 1/2)
of first kind
(1 1 0); (1 1 1); (0 1 1); (0 1 0); (1/2 1 1/2)
Carbon atoms
of second (1/4 1/4 1/4); (3/4 3/4 1/4); (1/4 3/4 3/4); (3/4 1/4 3/4)
kind

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(5) Crystal Structure of Sodium Chloride
Sodium chloride is an ionic crystal. It is a compound of the alkali halide family. Due to
the proximity of the sodium atom with a chlorine atom, the valence electron from the
sodium atom is transferred to the chlorine atom. With this transfer of an electron, the
sodium atom becomes a cation and the chlorine is converted to an anion. Then, these ions
are held by the ionic force and the bond that holds the atoms together is ionic.
A conventional unit cell of the structure consists of eight cubic primitive cells. In the
conventional unit cell of the crystal, sodium atoms occupy the FCC positions of a cubic
structure. Chlorine atoms are placed at the intermediate positions between the sodium
atoms. Chlorine atoms independently from an FCC structure similarly sodium atoms also
from an independent FCC structure. A unit cell of a sodium chloride crystal can be
regarded as the structure formed by the inter-penetration of sodium FCC lattice with the
Chlorine FCC lattice through one half of the lattice constant. This can be treated as the
graphical representation of the crystal structure.
Na
Cl
Na
Cl
Cl Na
Na Cl
The crystal structure can also be illustrated in terms of the co-ordinates of the atoms
in the structure. For this, an orthogonal co-ordinate system is considered. The origins of
the co-ordinate system can either be at the location of a chlorine atom or at the location of
a sodium atom. With the origin at the location of the sodium atom, the co-ordinates of the
sodium and chlorine atoms in the crystal structure are shown below. Sodium chloride is
an ionic crystal formed by the transfer of the valence electron from sodium atom to the
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chlorine atom. Due to this transfer the sodium atom is converted to a cation and the
chlorine is converted to an anion. These ions are held by the ionic force and the bond
that holds the atoms together is ionic bond. In the unit cell of the compound, chlorine
atoms occupy the FCC positions of a cubic structure. Sodium atoms occupy edge center
positions.
Atoms Co-ordinates
(0 0 0); (1 0 0); (1 0 1); (0 0 1); (1/2 0 1/2)
(1/2 1/2 0); (1 1/2 1/2); (1/2 1/2 1); (0 1/2 1/2)
Sodium
(1 1 0); (1 1 1); (0 1 1); (0 1 0); (1/2 1 1/2)
(1/2 1/2 0); (1 0 1/2); (1/2 0 1); (0 0 1/2);
(1 1/2 0); (1 1/2 1); (0 1/2 1); (0 1/2 0); (1/2 1/2 1/2)
Chlorine
(1/2 1 0); (1 1/2 1/2); (1/2 1 1); (0 1 1/2)
nM
Example: Show that for cubic lattice, the lattice constant a is given by a = 3
Nρ
Example: α – Iron is BCC and has the volume density of 7.86 gm/cm3. Calculate α value for the
atomic radius of an iron atom. The atomic weight of iron is 55.85 gm/mol.
3a
Solution: a = 2.867 Å, r= = 1.241 Å
4
Information in a Glance
SC BCC FCC HCP DC
No. of atoms per unit cell 1 2 4 6 8
Co-ordination no. 6 8 12 12 4
Packing fraction 52% 68% 74% 74% 34%
Atomic radii a 3a a 2 a a 3
2 4 4 2 8
Volume a3 a3 a3 a3 a3
Example Polonium Na, Li, Cr Al, Cu, Ag, Pb Zn Ge, Si, C

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2. X-Ray diffraction
2.1 Structure Factor
The atomic scattering factor or form factor f describes the scattering power of a single
atom in relation to the scattering power of a single electron and given by:
amplitude of radiation scattered from an atom
f =
amplitude of radiation scattered from an electron
In general f < Z, it approaches Z (atomic no.) in the limit case. The phase difference
between the wave scattered from the charge ρ(r) dv and that scattering from electron, in
accordance equation is given by
N n̂L
Geometric Structure Factor
The intensity of an x-ray beam n̂1
diffracted from a crystal not only n̂2 n̂2
n
depends upon the atomic θ θ
scattering
scattering factor of the various phase
atom involved but also on the
contents of the unit cell, i.e. on
the number. The total scattering amplitude F(h' k' l') for the reflection (h' k' l') is defined
as the ratio of the amplitude of radiation scattered by a single point electron placed at
origin for the same wavelength. It is given by:
⎛ 2π ⎞
i⎜ ⎟( rj ⋅N )
F ( h' k ' l ' ) = ∑ f j e iφj
= ∑ f je ⎝ λ ⎠
where fj is the atomic scattering factor for the jth atom αφ j is the phase difference if (uj,
vj, wj) represents the co-ordinate of jth atom we can write rj = uja + vjb +wjc, and
(u j h + v j k + w j l )
rj .N = λ (ujh + vjk + wjl) i.e. F (hkl ) = ∑ f j e i 2π
i
For identical atoms, all the fj’s have the same value f. Therefore, equation (i) take a
simple form. F(hkl) = f S
where S = ∑ e
2πi ( u j h + v j k + w j l )
is called Geometrical Structure Factor.
j

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Now since the intensity of a radiation is proportional to the square of its amplitude, the
intensity of diffracted beam may be written by I = |F|2 = F* F
The structure factor for some simple crystals are calculated below and the intensity of
various order of reflections associated with these structures is discussed.
Note: i) We can by find the structure factor allowed reflection by given crystal structure
either wise zero.
ii) eiθ = cos θ + i sin θ or eiπ = cos π + i sin π
(a) Simple cubic crystal: Unit cell contains only one atom at the origin
i.e. (u, v, w) = (0, 0, 0)
∴ F = fe2πi(0) = f
And therefore intensity which is the square of the amplitude is F2 = f2.
Thus F2 is thus independent of h, k & l and the same for all reflection.
∴ All h, k, l are possible in SC.
1 1
(b) Base centered cell: It has 2 atoms at 0, 0, 0 & , ,0
2 2
∴ F = f[1 + eπi(h + k)]
And F = 2f ⇒ F2 = 4f2: for h & k unmixed
While F = 0 ⇒ F2 = 0: for h & k mixed
Note : The value of l index has no effect on the structure factor
∴ Present planes are: (111), (112), (113) & (021), (022), (023)
Absent planes are: (011), (012), (013) & (101), (102), (103)
⎛1 1 1⎞
(c) Body Centered cell: It has 2 atoms at (0 0 0) & ⎜ ⎟
⎝2 2 2⎠
∴ F = f[1 + eπi(h + k + l)]
And F = 2f ⇒ F2 = 4f2: when (h + k + l) = Even
While F = 0 ⇒ F2 = 0: when (h + k + l) = odd
∴ Present planes are: (1 1 0), (2 0 0), (2 2 2) etc
Absent planes are: (1 0 0), (1 1 1), (2 1 0) etc

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⎛1 1 ⎞ ⎛1 1⎞ ⎛ 1 1⎞
(d) Face centered cell: It has 4 atoms at (0 0 0), ⎜ 0⎟ , ⎜ 0 ⎟ and ⎜ 0 ⎟
⎝22 ⎠ ⎝2 2⎠ ⎝ 2 2⎠
∴ F = f [1 + eπi(h + k) + eπi(h + l) + eπi(k + l)]
And F = 4f ⇒ F2 = 16f2 : If h, k, l are unmixed
While F = 0 ⇒ F2 = 0 : If h, k, l are mixed
∴ Present planes are: (1 1 1), (2 0 0), (2 2 0) etc
Absent planes are: (1 0 0), (1 1 0), (2 1 1) etc.
Simplified Table
Bravais lattice Reflection possibly Present Reflection necessarily absent
Simple cubic All None
Base centered cubic h & k unmixed h & k mixed
Body centered cubic (h + k + l) even (h + k + l) odd
Face centered cubic h, k & l unmixed h, k & l mixed
Note: (1) The first order reflection from (1 0 0) planes in a bcc crystal is absent, while
second order reflections from (1 0 0) plane is present and it is this reflection
which appears at the position of the 1st order reflection from (2 0 0) planes.
(2) The ratio of (h2 + k2 + l2) values for all allowed reflection from cubic crystal as
obtained from the extinction rules are given as follows.
SC :: 1 : 2 : 3 : 4 : 5 : 6 : 8 : 9 : 10 : 11 : 12
BCC : : 2 : 4 : 6 : 8 : 10 : 12 : 14 : 16 : 18 : 20
FCC :: 3 : 4 : 8 : 11 : 12 : 16 : 19 : 20 :
DC :: 3 : 8 : 11 : 16 : 19 : 20

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2.2 Braggs Law

X-rays are a form of electromagnetic radiation and these are used for determining the
crystal structures are they have high energy and short wavelengths. The wavelengths of
x-rays are of the order of the atomic spacing for solids. When a beam of x-rays impinges
on a solid material, a portion of this beam will be scattered in all direction by the
electrons associated with each atom or ion that lies within the beam path.
θ Αθ
θ θ
d hkl
C D
θ θ
B
From figure n λ = CB + BD
In ∆ ABC,
CB = AB sin θ = dhkl sin θ
BD = AD sin θ = dhkl sin θ
∴ d hkl sin θ = nλ
2dhkl sin θ = nλ
This is known as Bragg’s law, n is order of reflection. For SC a = b = c
nλ
sin θ = h2 + k 2 + l 2
2a

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2.3 Methods of X-ray Diffraction

In x-ray diffraction studies, the probability that the atomic planes with right orientations
are exposed to x-rays is increased by adopting there of crystal structure studies method.
1) Law Method
2) Rotating Method
3) Powder Method
1) Laue’s Technique
The single crystal is held stationary and a beam of white radiations is inclined on it at a
fixed glacing angle θ i.e. θ is fixed while λ is varies different wavelengths present in the
white radiations select the appropriate reflecting planes out of the numerous present in
the crystal such that the Bragg’s condition is satisfied this technique is called the Laue’s
technique.
2) Rotating Crystal Method
A single crystal is held in the path of monochromatic radiations and is rotated about an
axis i.e. λ is fixed while θ varies. Different sets of parallel atomic planes are exposed to
incident radiations for different values of θ and reflections take place from those atomic
planes for which d and θ satisfied the Bragg’s law. This method is known as the rotating
crystal method.
3) Powder Method
Modern x-ray crystal analysis uses an x-ray diffractometer which has a radiation counter
to detect the angle and intensity of the diffraction beam.
100
Intensity (a.u.)
X-ray
001
X-ray
detector
110
source
102
101
θ 2θ
002
201
112
Sample
stage
20 30 40 50 60 70 80
2θ (degree)

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A recorder automatically plots the intensity of the diffracted beam as the counter moves
on a Goniometer circle. Figure shows an x-ray diffraction recorder chart for the intensity
of the diffracted beam verses the diffraction angle 2θ for a powdered pure metal
specimen.
Characteristics of the Bragg’s law:
(i). It is the consequence of the periodicity of the space lattice.
(ii). The Bragg’s law does not refer to the arrangement or basis of the atoms associated
with the lattice points.
(iii). For a given order n and spacing d, the angle θ decreases with decrease in the
wavelength λ.
(iv). The relative intensity of the various orders n of diffraction from a given set of
parallel planes is determine by the composition of the basis of the crystal results in
the change in d. This in turn changes the phase difference between the interfering
waves and hence the resulting amplitude. Being proportional to the square of the
amplitude the intensity is therefore affected.
(v). Bragg’s reflection occur only for the wavelength λ ≤ 2d . That’s why crystal cannot
diffract visible rays.
(vi). For X-ray photons,
hc 12400
E=hv = hc/λ or λ ( A0 ) =
=
E E (eV )
Therefore the energy of X-rays of wavelength 1A0 is 12.4keV.

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Electron Diffraction by Crystal

According to de-Broglie, a particle of momentum p (= mv) is associated with a wave of
wavelength
h h
λ ( A0 ) = =
P 2mE
Where h is the Planck constant. M is the mass of the electron and E is the energy of the
electron. Since m = 9.1x10-31kg.
12
Therefore λ ( A 0 ) =
E
Thus the energy of electrons of wavelength 1A0 is 144eV.
Characteristic of Electron Diffraction
(i). Incident electrons are not only diffracted by the electrons but also by the nuclei of the
atoms of the crystal. So the electron diffraction is much more intense than X-ray
diffraction.
(ii). An electron beam has very low penetration power as it experiences repulsion from
atomic electrons. Therefore this technique is useful for thin films.
Neutron diffraction by Crystal
Using the de-Broglie relation for neutron (mass m=1.675x10-27kg) the associated
wavelength
0.28
λ ( A0 ) =
E
This shows that the energy associated with neutrons of wavelength 1A0 is approximately
0.08eV. This energy is much less than of X-rays of the same wavelength.
Characteristic of Neutron Diffraction
(i) Neutrons are scattered only by the nuclei of the atoms of the crystal.
(ii) Scattering cross section does not vary with increasing atomic number.
(iii) Lighter elements such as hydrogen and carbon produces strong neutron scattering
which is almost absent in X-ray diffraction.

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3. Einstein and Debye Theory of Specific Heat

3.1 Classical Theory
A crystal consists of atoms which are arranged in a periodic manner and are bound
togather by strong binding forces.
“In the classical theory it is consumed that each atom of a crystal acts as a three-
dimensional harmonic oscillator and all the atoms vibrate independent of one other.”
Further a system of N vibrating atoms or N independent three dimensional harmonic
oscillators is equivalent to a system of 3N identical and independent one-dimensional
Harmonic oscillators.
Assuming that the distribution of oscillators in energy obeys the Maxwell-Boltzmann
distribution law the average energy of each harmonic oscillator is given by
1
According to Equipartition Theory K .E = k BT
2
1
According to Hooks Law K .E = P.E = k BT
2
But E = K .E + P.E
1 1
⇒ E = k BT + k B T = k BT
2 2
Thus the total vibration energy of the crystal containing N identical atoms or 3N one-
dimensional Harmonic oscillator become
E=3N<E> 6 3R
E = 3Nk BT ↑ 4 Ag
Si
⎛ ∂E ⎞ Cv 2
Using the definition of specific heat of CV = ⎜ ⎟
⎝ ∂T ⎠ V
T
⎛ ∂E ⎞ 400
CV = ⎜ ⎟ = 3 Nk B = 3R
⎝ ∂T ⎠V
The above result so that the molar specific heat of all the solids is constant and is
independent of temperature and frequency this is called Dulog and Petit’s law

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3.2 Einstein Theory of Specific Heat

Einstein, in 1911, attempted to resolve the discrepancies of the classical theory of specific
heat by applying the Planck’s quantum theory. Einstein retained all the assumptions of
the classical theory as such except replacing the classical harmonic oscillator by quantum
⎛ 1⎞ ⎛ 1⎞
Harmonic oscillator i.e. [∈n = nhν ] = n ωo →∈n = ⎜ n + ⎟ hν = ⎜ n + ⎟ ωo
⎝ 2⎠ ⎝ 2⎠
The salient features of the Einstein’s theory are listed as:
1) A crystal consist of atoms which may be regarded as identical and independent
harmonic oscillator
2) A solid consisting of N atoms is equivalent to 3 N one-dimensional harmonic oscillator
3) All the oscillators vibrate with the same natural frequency due to the identical
environment of each.
4) The oscillators are quantum oscillators and have discrete energy
5) Any number of oscillators may be present in the same quantum state.
6) The atomic oscillators form an assembly of system which are distinguishable or
identifiable due to their location at separate and distinct lattice state and hence obey the
Maxwell-Boltzmann distribution of energy.
To calculate the average energy of an oscillator, we replace integration by summation in
expression for the m-B distribution of energy and obtain.
∞
∑∈ n e− β En
⎛ 1⎞ 1
E = n=0
= E where ∈n = ⎜ n + ⎟ ωo , β = for dulong Petits
∞
⎝ 2⎠ k BT and Einstein
∑e − β En
↑
D (E )
n=0
1 ω
E = ω o + β ωo o
2 e −1( )
The expression for the internal energy of the crystal become v →
3 3N ω
E = 3N E = N ωo + β ω o
2 e o −1

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ωo
2
⎛ ∂E ⎞ ⎛ ωo ⎞ e k BT
∴ Cv = ⎜ ⎟ = 3NK B ⎜ ⎟ βω
⎝ ∂T ⎠V ( )
2
⎝ k BT ⎠ e o − 1
2
⎛θ ⎞ eθ E / T ωo
Then, CV = 3 Nk B ⎜ E ⎟ = (let Einstein temperature θ E = )
⎝ T ⎠ ( eθ E / T − 1)
2
kB
Case-I:
High temperature behavior k BT >> ω0 or T >> θ E
⎛ ωo ⎞
ωo
⎜1 + ⎟ 2
ωo ωo ⎛ ωo ⎞ ⎝ k BT ⎠
e k BT −1 ≅ 1 + −1 = ⇒ CV = 3 Nk B ⎜ ⎟ 2
k BT k BT ⎝ k BT ⎠ ⎛ ωo ⎞
⎜ ⎟
⎝ k BT ⎠
ωo
CV = 3 Nk B = 3R →0 for large T
k BT
which is the Dulong and Petits law as obtain from classical theory.
Case-II:
Low temperature behavior k BT << ω0 or T << θ E
ωo ωo
e kBT − 1 = e kBT
⎛θ ⎞
2 6
⇒ CV = 3Nk B ⎜ E ⎟ e −θ E / T
⎝T ⎠ 5 Theorical curve
↑ 4
Thus, for T << θE the heat capacity is
Cv 3
proportional to e −θ E / T which is the (cal/mole - k) 2 at θ E = 1320 K
2
dominating factor. But experimentally for diamond
1
3
it is found to vary as T for most of the
0 .2 0 .4 0 .6 0 .8 1
solid.
T /θE →
Thus Einstein theory failed to explain actual variation of specific heat.

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Debye Theory of Specific Heat

In this model, the vibrational motion of the crystal as a whole was considered to be
equivalent to the vibrational motion of system of complete harmonic oscillator which can
propagate a range of frequency rather than a single frequency. Debye proposed that
crystal can propagate elastic waves of wave lengths ranging from low frequency of
(sound wave) to high frequencies corresponding to infrared absorption. This means that a
crystal can be a number of modes of vibration. The number of vibration modes per unit
frequency range is called density of modes z ( v ) .
Thus, the number of possible modes of vibration is

⎛ 2L 2L ⎞
⎜⎜ λ n = , dx = dv ⎟⎟
⎝ n v s ⎠
1 1 4 L2 v 2 2 L 4 L2 v 2 ↑
z ( v ) dv =
8
( 4π R 2
dR ) 8
= × 4π
vs2 vs
dv ∵ R2 =
vs2 z (v )
t l
⎛ 4π v ⎞ 4
z ( v ) dv = ⎜ 3 ⎟ v 2 dv v = π R 3 , dx = 4π R 2 dR
⎝ vs ⎠ 3 vD →
In general, the elastic waves propagating in solid are of two

types, transverse waves and longitudinal wave
z (v )
⎛2 1⎞
z ( v ) dv = 4π v ⎜ 3 + 3 ⎟ v 2 dv
⎝ vt vl ⎠
For the total number of vibrational modes with frequencies
v →
ranging from zero to vD . We can write
vD
∫ z ( v ) dv = 3N
0
vD ⎛ 2 1⎞ ⎛ 2 1 ⎞ v3
or ∫ 4π v ⎜ 3 + 3 ⎟ v 2 dv = 3 N or 4π v ⎜ 3 + 3 ⎟ D = 3 N (i)
0 ⎝ vt vl ⎠ ⎝ vt vl ⎠ 3

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We can associate a Harmonic oscillator of the same frequency with each vibrational
mode. Thus, the vibrational energy of the crystal is given by
vD
hv
E = ∫ Ez ( v ) dv (ii) where ∈ = (Plank’s theory)
0 ⎛ hv ⎞
⎜e k BT
− 1⎟
⎜ ⎟
⎝ ⎠
⎛ 2 1 ⎞ vD v3dv 9 Nh vD v3dv
Using equation (i) and (ii) E = 4π hv ⎜ 3 + 3 ⎟ ∫ ⇒ E = ∫
⎝ vt vl ⎠ 0 ⎛ kBT
hv ⎞ vD3 0 ⎛ hv ⎞
⎜ e − 1⎟ ⎜ e kBT − 1⎟
⎜ ⎟ ⎜ ⎟
⎝ ⎠ ⎝ ⎠
hv hv xk T k BT
Putting = x and D = xm , v = B , dv = dx
k BT kBT h h
4 3
9 Nh ⎛ k BT ⎞ x x3dx ⎛ k BT ⎞ xm x3dx
E= 3 ⎜ ⎟ ∫ = 9 Nk BT ⎜ ⎟ ∫ x
vD ⎝ h ⎠ 0 e x − 1 ( )
⎝ hvD ⎠ 0 e − 1 ( )
3 θ /T
hv θ ⎛T ⎞ D
x3dx
Let Debye temperature is θ D = D , xm = D ⇒ E = 9 Nk BT ⎜ ⎟ ∫
kB T ⎝ θD ⎠ 0 ( e − 1)
x
d θ /T
⎛ T ⎞ D
x d dx
For more general E = 3NdkT ⎜ ⎟ ∫
⎝ θD ⎠ 0 (e x
−1 )
d = 1 for 1D , d = 2 for 2 D , d = 3 for 3D
We will discuss for 3 dimension
Case-I: High temperature T >> θ D ex −1 ≈ x
3 θ /T
⎛T ⎞ D
x3dx
E = 9 Nk BT ⎜ ⎟ ∫ ⇒ E = 3Nk BT
⎝ θD ⎠ 0 ( e − 1)
x
⎛ ∂E ⎞
CV = ⎜ ⎟ = 3 Nk B = 3R ⇒ CV = 3R
⎝ ∂T ⎠V
Thus, at high temperatures, the Debye’s theory also obeys the Dulong and Petit law as
obeyed by classical theory and the Einstein theory.

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Case-II: Low temperature

For T << θ D , xm = θ D / T → ∞
3 3
⎛ T ⎞ ∞ x3dx ⎛ T ⎞ π4 ∞
x3dx π n+1
E = 9 Nk BT ⎜ ⎟ ∫ x = 9 Nk BT ⎜ ⎟ ........ ∫ x =
⎝ θD ⎠ 0 e −1 ( )⎝ θ D ⎠ 15 0 e −1 ( )
1: 3 : 5 : ( 2n − 1)
3 T4
E = π 4 Nk B ⇒ E ∝T4
5 θD
3
⎛ ∂E ⎞ 12 4 ⎛ T ⎞
CV = ⎜ ⎟ = π Nk B ⎜ ⎟
⎝ ∂T ⎠V 5 ⎝ θD ⎠
3
12 ⎛T ⎞
CV = π 4 R ⎜ ⎟ ⇒ CV ∝ T 3
5 ⎝ θD ⎠
Thus, at very low temperature, the specific heat is proportional to T3. This is called the
debye T3 law.
Note: The heat capacity dependency on temperature in 3D, 2D & 1D as follows
CV ∝ T 3 → 3D ⎫
⎪
∝ T 2 → 2 D ⎬ at low temperature
∝ T → 1D ⎪
⎭

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4. Free Electron Theory of Metals

The classical, Einstein, and Debye theories of specific heats of solids apply with equal
degrees of success to both metals and nonmetals, which is strange because they ignore
the presence of free electrons in metals.
In a typical metal each atom contributes one electron to the common “electron gas,” so in
1 kilomole of the metal there are N 0 free electrons. If these electrons behave like the
3
molecules of an ideal gas, each would have k BT of kinetic energy on the average. The
2
metal would then have
3 3
Ee = N 0 k BT = RT
2 2
of internal energy per kilomole due to the electrons. The molar specific heat due to the
electrons should therefore be
⎛ ∂E ⎞ 3
cVe = ⎜ e ⎟ = R
⎝ ∂T ⎠V 2
and the total specific heat of the metal should be
3 9
cV = 3R + R= R
2 2
at high temperature where a classical analysis is valid. Actually, of course, the Dulong-
Petit value of 3R holds at high temperatures, from which we conclude that the free
electrons do not in fact contribute to the specific heat.
1
Electrons are fermions and obey Fermi-Dirac statistics with average energies ∈= kT
2
per degree of freedom at “high” temperature, how high is high enough for classical
behaviour is not necessarily the same for the two kinds of systems in a metal.
The distribution function that gives the average occupancy of a state of energy ∈ in a
1
system of fermions is f FD (∈) = (∈−∈F ) / kT
(i)
e +1
where f FD (∈) is average occupancy per state.

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What we also need is an expression for g (∈) d ∈ , the number of quantum states available
to electrons with energies between ∈ and ∈ + d ∈ .

The number of standing waves in a cubical cavity L on a side is
g ( f ) dj = π j 2 dj (ii)
h
where j = 2 L / λ and λ is its de Broglie wavelength of λ = . Electrons in a metal have
p
nonrelativistic velocities.
2L 2 Lp 2 L 2m ∈ L 2m
j= = = dj = d∈
λ h h h ∈
Using these expressions for j and dj in equation (ii) gives
8 2π L3 m3/ 2
g (∈) d ∈= ∈ d∈
h3
As in the case of standing waves in a cavity the exact shape of the metal sample does not
matter, so we can substitute its volume V for L3 to give
8 2π Vm3 / 2
g (∈) d ∈= ∈ d∈ (iii)
h3
where g (∈) d∈ is the number of energy states in energy range ∈ and ∈ + d ∈ .
Fermi Energy
We can find Fermi energy ∈F by filling up the energy states in the metal sample at T = 0
with the N free electrons it contains in order of increasing energy starting from∈= 0 . The
highest state to be filled will then have the energy ∈=∈F by definition. The number of
electrons that can have the same energy ∈ is equal to the number of state that have this
energy, since each state is limited to one electron. Hence
∈F 8 2π Vm3/ 2 ∈F 16 2π Vm3/ 2 3/ 2
N = ∫ g (∈) = ∫ ∈d ∈= ∈F
0 h3 0 3h3
2/3
h2 ⎛ 3N ⎞
and so ∈F = ⎜ ⎟ (iv)
2m ⎝ 8π V ⎠

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The number of electrons in an electron gas that have energies between ∈ and ∈ + d ∈
n (∈) d ∈= g (∈) f (∈) d ∈=

(8 )
2π Vm3/ 2 / h3 ∈d ∈
(v)
(∈−∈ ) / hT
e f +1
If we express the numerator of equation (v) in terms of the Fermi energy ∈F we get
−3
⎛ 3N ⎞ 2
⎜ ⎟ ∈F ∈d ∈
⎝ 2 ⎠
n (∈) d ∈= (vi)
e( F ) + 1
∈−∈ / hT
It is interesting to determine the average electron energy at 0K . To do this, we first find

∈F
the total energy E0 at 0K , which is E0 = ∫ ∈n (∈) d ∈ since at T = 0 K all the
0
electrons have energies less than or equal to the Fermi energy ∈F ,
3 N −23 ∈F
3
3
E0 = ∈F ∫ ∈2 d ∈= N ∈F ∵ e(∈−∈F ) / kT = e −∞ = 0
2 0 5
The average electron energy ∈0 is this total energy divided by the number N of
3
electrons present, which gives ∈0 = ∈F (vii)
5
Since Fermi energies for metals are usually several electron volts, the average electron
energy in them at 0K will also be of this order of magnitude. The temperature of an ideal
gas whose molecules have an average kinetic energy of 1 eV is11, 600 K . If free
electrons behaved classically, a sample of copper would have to be at a temperature of
about 50, 000 K for its electrons to have the same average energy they actually have
at 0K .
The failure of the free electrons in a metal to contribute appreciably to its specific heat
follows directly from their energy distribution-those within about kT of the Fermi
energy-are because the states above them are already filled. It is unlikely that an electron
with, say, an energy ∈ that is 0.5 eV below ∈F can leapfrog the filled states above it to
the nearest vacant state when kT at room temperature is 0.025 eV and even at 500 K is
only 0.043 eV .

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π 2 ⎛ kT ⎞
The specific heat of the electron gas in a metal is given by cVe = ⎜ ⎟R
2 ⎝ ∈F ⎠
3
The coefficient of R is very much smaller than the classical figure of . The dominance
2
of the atomic specific heat cV in a metal over the electronic specific heat is pronounced
over a wide temperature range. However, at very low temperature cVe becomes
significant because cV is then approximately proportional to T 3 whereas cVe is
proportional to T . At very high temperature cV has leveled out at about 3R while cVe has
continued to increase, and the contribution of cVe to the total specific heat is then
detectable.
Example: Find the Fermi energy in copper on the assumption that each copper atom
contributites one free electron to the electron gas. (This is a reasonable assumption sice, a
copper atom has a single 4s electron outside closed inner shells). The density of copper is
8.94 ×103 kg / m3 and its atomic mass is 63.5 u.
N
Solution: The electron density in copper is equal to the number of copper atoms per
V
unit volume. Since 1u = 1.66 × 10−27 kg ,
N atoms mass/m3 8.94 ×103 kg / m3

= = =
V m3 (
mass/atom ( 63.5 u ) × 1.66 ×10−27 kg / u )
= 8.48 × 1028 atoms/m3 = 8.48 × 1028 electrons/m3
The corresponding Fermi energy is,
2
( ) ( )
2
6.63 ×10−34 J .s ⎡ ( 3) 8.48 ×1028 electrons/m3 ⎤3
∈F = ⎢ ⎥
( 2 ) ( 9.11×10 −31
)
kg/electron ⎢⎣ 8π ⎥⎦
= 1.13 × 10−18 J = 7.04 eV

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4.3 Density of States

The density of states of a system describes the number of states per interval of energy at
each energy level that are available to be occupied.
Density of states in 1 -Dimension
Consider a particle of mass m confined to a line of length L . The energy levels are
labeled according to the quantum number n which gives the number of half wavelength
in the wavefunction. 2L
λ=
2L 4
For n th mole the wavelength is λn = . 4
n
2π 2L
This can be expressed in term of wave vector K = λ=
λ 3
3
nπ
∴ Kn = n = 1, 2,3,.... 2L
L λ=
2
The number of K - states in interval K and K + dK is 2
λ = 2L
g (K ) dK =
( K + dK ) − K =
L
dK ⇒ g ( K ) dK =
L
dK 1
π π π L
0
L
g ( K ) dK L
The density of state is ρ ( K ) = =
dK π
Second Method
The wave function of trapped in one dimensional unbounded medium of periodic
boundary condition with period ψ ( x ) = Aeikx
Since wave function is periodic ∴ ψ ( x ) = ψ ( x + L )
⇒ Aeikx = Aeik ( x + L ) ⇒ eikL = 1

⇒ eikL = ei 2 nπ where n = 0, ±1, ±2, ±3....
2nπ
∴ K =± where n = 0,1, 2,3....
L

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The number of K -states in range K and K + dK is
g ( K ) dK = 2 ×
( K + dK ) − K ⇒ g ( K ) dK =
L
dK
⎛ 2π ⎞ π
⎜ ⎟
⎝ L ⎠
g ( K ) dK L
The density of state is ρ ( K ) = =
dK π
Density of States in 2-Dimension
The wave function of particle trapped in two dimensional unbounded medium of periodic
boundary conditions with period of L in both x and y dimensions is
ψ ( x, y ) = Aeik .r = Ae ( )
= ψ ( x )ψ ( y )
i Kx x+ K y y iK y y
= AelK x x e
where K = K x iˆ + K y ˆj , r = xiˆ + yjˆ and ψ ( x ) = A1eikx and ψ ( y ) = A2 e y .

ik
Since wave function is periodic in x & y direction
∴ ψ ( x ) = ψ ( x + L ) and ψ ( y ) = ψ ( y + L )
2nπ 2nπ
This gives K x = ± and K y = ± , n = 0,1, 2,3....
L L
The possible values of K - states in 2 -dimensional K -space can be represented as
The number of K -states in range K and K + dK is Ky
π ( K + dK ) − π K 2
2
g ( K ) dK =
⎛ 2π ⎞
2 K
⎜ ⎟ K + dK
Kx
⎝ L ⎠
2
⎛ L ⎞ ⎡
=⎜
⎝ 2π ⎠
2
(
⎟ ⎣π K + dK + 2 KdK − K ⎤⎦
2
)
2
⎛ L ⎞
g ( K ) dK = ⎜ ⎟ 2π KdK Figure: Draw two circles of radius K + dK with
⎝ 2π ⎠ dK of extremely small width
The density of state is
g ( K ) dK
2
⎛ L ⎞
ρ (K ) = =⎜ ⎟ 2π K
dK ⎝ 2π ⎠

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Density of States in 3-Dimension

The wavefunction of particle trapped in 3 -dimensional unbounded medium of periodic
boundary conditions with period L is
ψ ( x, y, z ) = Aei k .r = Ae ( )
= ψ ( x )ψ ( y )ψ ( z )
i Kx x+ K y y+ Kz z
where K = K x iˆ + K y ˆj + K z kˆ , r = xiˆ + yjˆ + 3kˆ , ψ ( x ) = A1eik , ψ ( y ) = A2 e

ik y
x
and
ψ ( z ) = A3 eik z
For periodicity
ψ ( x) =ψ ( x + L), ψ ( y) =ψ ( y + L) &ψ ( z ) = ψ ( z + L )
This gives Ky
2nπ
Kx = ± ; n = 0,1, 2,3...
L
2nπ
Ky = ± ; n = 0,1, 2,3....
L K
K + dK
Kx
2nπ
& Kz = ± ; n = 0,1, 2,3....
L
There values can be represented as in figure.
Kz
The number of K -states in range K and K + dK is
Fig: Draw two spheres of radius K and
4π 4π K + dK with dK of extremely small width
( K + dK ) − K 3
3
g ( K ) dK = 3 3
3
⎛ 2π ⎞
⎜ ⎟
⎝ L ⎠
3
⎛ L ⎞ 4π
g ( K ) dK = ⎜ ⎟ ⎣⎡ K + dK + 3K dK + 3KdK − K ⎦⎤
3 3 2 2 3
⎝ 2π ⎠ 3
3
⎛ L ⎞
g ( K ) dK ≅ ⎜ ⎟ 4π K dK
2
⎝ 2π ⎠
g ( K ) dK
3
⎛ L ⎞
The density of state is ρ ( K ) dK = ⇒ ρ ( K ) dK = ⎜ ⎟ 4π K
2
dK ⎝ 2π ⎠

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5. Origin of Energy Bands

The failure of the free electron model is due to the over simplified assumption that a
conduction electron in a metal experiences a constant or zero potential due to the ion
cores and hence is free to move about crystal.
Now the periodic potential described below forms the basis of the band Theory of solids.
The behavior of an electron in this potential is describe by constructing the electron wave
functions using one-electron approximates.
As we shall discuss later, the motion of an electron in a periodic potential yields the
following results.
(a) There exist allowed energy bands separated by V ( x)
forbidden region or band gap. a
• • •
(b) The electronic energy function E(K) is
periodic in the wave vector K
In the free electron Theory E varies with K
2
k2
EK =
2m
The Block Theorem
The 1-D Schrödinger equation for an electron moving in a constant potential V0 is
d 2ψ 2m
+ 2 (E − V0 )ψ = 0 . The solution ψ(x) = e±ikx
dx 2
For periodic potential with period equal to the lattice constant a we have
ψ(x) = e± ikx Uk(x) where Uk = Uk (x + a)
Note: Let g(x) and f(x) be two real and independent solution to the second order
differential The general equation can be written as ψ(x) = A f(x) + B g(x)
dg (x ) df ( x )
while f (x ) − g (x ) = constant
dx dx
In three dimensions, the block Theorem is expressed as
ψ k ( r ) = eik ⋅r uk ( r ) , ψ k ( r ) = eikr
Thus the wave function becomes the one of a free electron.
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The Kronig-Penney Model

This model illustrates the behaviour of electrons in a periodic potential by assuming a
relatively simple one-dimensional model of periodic potential as shown figure.
V ( x)
↑
V0
V=0
−b 0 a
For this potential write down the Schrödinger wave equation and its general solution with
taking potential constant finally. We get
sin αa mV0 ba
P⋅ + cos αa = cos ka where P =
αa 2
which is a measure of the area V0b of the potential barrier. Thus increasing P has the
physical meaning of bonding an electron more strongly to a particular potential well
1
sin α a + cos α a
αa
+1
− 3π −π o π 3π 4π
− 4π − 2π 2π αa→
α2 2
π2 2
We know that E = = n2
2m 2ma 2
It may be noted that since α2 is proportional to the energy E the abscissa is a measure of
the energy. The following conclusion may be drawn from figure.
(i) The energy spectrum of the electrons consists of alternate regions of allowed energy
bands (solid lines on abscissa) and forbidden energy band (broken lines)
(ii) The width of the allowed energy bands increases with αa or the energy
(iii) The width of particular allowed energy band decreases with increase in value of P.

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Figure- Allowed (shaded) and forbidden (open) energy ranges as a function of P
O
P 1 4π
← →
4π P
Energy Verses Wave-Vector relationship
The energy E is also an even periodic function of k with period of 2π/a i.e k = ± nπ/a
l
dn = dk
2π
1 dE
Velocity is v = .
dk
5.1 Concept Effective Mass and Holes
In one dimension, an electron with wave-vector k has group velocity
dω 1 dE
v= = (i)
dk dk
If an electric field ε acts on the electron, then in time δ t . It will do work
δ E = force times distance = −eε vδ t (ii)
dE
But δE = δ k = vδ t . (iii)
dk
So, comparing equation (ii) with (iii), we have
eε dk
δk = − δ t , or = −eε (iv)
dt

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dk
In terms of force F , =F E
dt
1
Generalising to three dimensions: v = ∇k E
v
d d d dk
where ∇ k = iˆ + ˆj + kˆ and =F
dk x dk y dk z dt
dω 1 dE m*
From equation (i) v = = ,
dk dk
dv 1 d 2 E 1 d 2 E dk
Differentiating with respect to time = =
dt dkdt dk 2 dt
k
dk π π
But from equation (iv), =F −
dt a a
dv 1 d 2 E
So = 2 F
dt dk 2
dv 1
But from Newton’s equation we expect = F
dt m
1 1 d 2E
which leads us to define an effective mass = 2
m* dk 2
That is
The dynamics of electrons is modified by the crystal potential;
The effective mass depends on the curvature of the bands;
Flat bands have large effective masses;
Near the bottom of a band, m* is positive, near the top of a band, m* is negative.

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Hole Concept
Hole wavevector: The total k of a full band is zero: if we remove an electron with
wavevector ke the total k of the band is k h + k e = 0 ⇒ k h = − ke
Hole energy: Take the energy zero to be the top of the valence band. The lower the
electron energy, the more energy it takes to remove it; thus
Eh ( kh ) = − Ee ( ke )
But bands are usually symmetric, E ( k ) = E ( −k )
So Eh ( kh ) = Eh ( − kh ) = − Ee ( ke )
1
Hole velocity: In three dimensions vh = ∇ k Eh
h h
But k h = − ke So ∇ kh = −∇ ke
1
and so vh = − ∇ ke ( − Ee ) = ve
The group velocity of the hole is the same as that of the electron.
Hole effective mass: The curvature of E is just the negative of the curvature of − E ,
So mh* = −me*
Note that this has the pleasant effect that if the electron effective mass is negative, as it is
at the top of the band, the equivalent hole has a positive effective mass.
Hole dynamics
dke
We know that = −e ( ε + ve × B ) ,
dt
Substituting kh = − ke and vh = ve gives
dkh
= e ( ε + vh × B )
dt
Exactly the equation of motion for a particle of positive charge.
Under an electric field, electrons and holes acquire drift velocities in opposite directions,
but both give electric current in the direction of the field.

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6. Elementary Ideas about Dia-, Para- and Ferromagnetism

Materials which look permanent magnetic dipole are called diamagnetic if there are
permanent magnetic dipoles associated with the atoms in a material such a material may
be paramagnetic ferromagnetic, anti-ferromagnetic, depending on the interaction between
the individual dipoles. Thus if the interaction between the atomic permanent dipole
moment is zero (or negligible), a material will be paramagnetic. If the dipoles interact in
such a manner that they tend to line up in parallel, the material will be ferromagnetic, if
the neighbouring dipoles tend to line up so that they are anti-parallel the material is
anti-ferromagnetic or ferromagnetic, depending on the magnitudes of the dipoles on the
two “sub lattice” as indicated schematically for a one-dimensional model in figure shows:
Paramagnetic
Ferromagnetic
Anti ferromagnetic
Ferrimagnetic
In case of antiferromagnetic configuration that net magnetic moment is zero, because the
spins of neigbhouring dipoles are equal and opposite whereas in ferrimagnetic the spins
of neighbouring dipoles are opposite and unequal in magnitude, thus in this case there
may be relatively large net magnetization.

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The magnetic materials can also be classified on the basis of the behaviour when these
materials are placed in a magnetic field.
Magnetic Properties
There are two fields to consider:
The magnetic field H which is generated by currents according to Ampere’s law. H is
measured in Am −1 (Oersteds in old units)
The magnetic induction, or magnetic flux density, B which gives the energy of a dipole
in a field, E = − m ⋅ B and the torque experienced by a dipole moment m as G = m × B .
B is measured in Wb m −2 or T (Gauss in old units).
In free space, B = μ0 H
In a meterial ( )
B = μ0 H + M = μ 0 μ r H
where μr is the relative permeability, χ is the magnetic susceptibility, which is a

dimensionless quantity
Note, through that χ is sometimes tabulated as the molar susceptibility χ m = Vm χ
χ
where Vm is the volume occupted by one mole, or as the mass susceptibility χ g = ,
ρ
where ρ is the density.
M , the magnetisation, is the dipole moment per unit volume.
M = χH
In general μr (and hence χ ) will depend on position and will be tensors (so that B is
not necessarily parrallel to H )

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6.1 Diamagnetism
Classically, we have Lenz’s law, which states that the action of a magnetic field on the
orbital motion of an electron causes a back-emf which opposes the magnetic field which
causes it.
Frankly, this is an unsatisfactory explanation, but we cannot do better until we have
studied the inclusion of magnetic fields into quantum mechanics using magnetic vector
potentials.
Imagine an electron in an atom as a charge e moving clockwise in the x-y plane in a
circle of radius a , area A , with angular velocity ω .
This is equivalent to a current I = charge/time = eω / ( 2π ) ,
so there is a magnetic moment μ = IA = eω a 2 / 2
The electron is kept in this orbit by a central force F = meω 2 a

Now if a flux density B is applied in the z - direction there will be a Lorentz force giving
an additional force along a radius ΔF = evB = eω aB
If we assume the charge keeps moving in a circle of the same radius it will have a new
angular velocity ω ′ ,
eω B
meω ′2 a = F − ΔF so meω ′2 a = meω 2 a − eω aB , or ω ′2 − ω 2 = −
me
If there change in frequency is small we have ω ′2 − ω 2 ≈ 2ωΔω where Δω = ω ′ − ω .

eB eB
Thus Δω = − where is called the Larmor frequency.
2me 2m0
Substituting back into μ = IA = eω a 2 / 2 ,
e2 a 2
we find a change in magnetic moment Δμ = − B.
4me

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Recall that a was the radius of a ring of current perpendicular to the field: if we average
over a spherical atom
2 2 e2 r 2
a = x + y
2 2 2
= ⎡⎣ x 2 + y 2 + z 2 ⎤⎦ = r 2 , so Δμ = B.
3 3 6me
If we have n atoms per volume, each with p electrons in the outer shells, the
magnetisation will be
M M μ0 npe2 r 2
M = npΔμ and χ= = μ0 =−
H B 6me
1/ χ
diamagne
↑
χ
T→
χ ∝T T→
1
∝T
χ
Range: −1 ≤ χ ≤ 0 ≈ −10−5 ( −ve )
Note: χ = 0 only for vacuum.

Diamagnetic susceptibility:
• Negative
• Typically −10−6 to − 10−5
• Independent of temperature
• Always present, even when there are no permanent dipole moments on the atoms.

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6.2 Paramagnetism
Paramagnetism occurs when the material contains permanent magnetic moments. If the
magnetic moments do not interact with each other, they will be randomly arranged in the
absence of a magnetic field.
When a field is applied, there is a balance between the internal energy trying to arrange
the moments parallel to the field and entropy trying to randomize them.
The magnetic moments arise from electrons, but if we they are localized at atomic sites
we can regard them as distinguishable, and use Boltzmann statistics.
1
Paramagnetism of spin - ions:
2
The spin is either up or down relative to the field, and so the magnetic moment is either
e
+ μ B or − μ B , where μ B = = 9.274 × 10−24 Am 2 .
2me
The corresponding energies in a flux density B are − μ B B and μ B B , so the average
μBeμ B B / k BT
− μ B e − μ B B / k BT ⎛μ B⎞
magnetic moment per atom is μ = = μ B tan ⎜ B ⎟
e μ B B / k BT +e − μ B B / k BT
⎝ k BT ⎠
μ B2 B
For small z , tanh z ≈ z, so for small fields or high temperature μ ≈
k BT
nμ0 μ B2
If there are n atoms per volume, then, χ =
k BT
Clearly, though, for low T or large B the magnetic moment per atom saturates, as it
must, as the largest magnetization possible saturation magnetization has all the spins
aligned fully, M B = nμ B M / MB
1
μB B / kBT
−4 −3 −2 −1 1 2 3 4
−1

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Genral J ionic paramagnetism

An atomic angular momentum J made of spin S and orbital angular momentum
quantum number L , will have a magnetic moment g J μ B J , where gJ is the Lande
3 S ( S + 1) − L ( L + 1)
g - factor gJ = +
2 2 J ( J + 1)
∑
J
mg J μ B e mx g J μB
The average atomic magnetic moment will be μ = m =− J
∵x =
∑
J
e mx k BT
m =− J
If we assume that T is large and / or B is small, we can expand the exponential, giving
∑ m (1 + mx )
J
μ ≈ g J μB m =− J
∑ (1 + mx )
J
m =− J
J J J
1
Note that ∑ J = 2J +1 , ∑ m = 0 , ∑ m
m =− J m =− J m =− J
2
=
3
J ( J + 1)( 2 J + 1)
xJ ( J + 1)( 2 J + 1) g J2 μ B2 J ( J + 1)
Then μ ≈ g J μB =
3 ( 2 J + 1) 3k BT
μ0 nJ2 μ B2 J ( J + 1)
This leads to susceptibility x=
3k BT
C
This is curie’s Law, often written χ = where C is curie’s constant.
T
↑ ↑
χ 1/ χ
Paramagnetism
T→ T→

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6.3 Ferromagnetism
Ferromagnetic materials are spontaneously magnetized even in the absence of external
magnetic field. All ferromagnetic material becomes paramagnetic above a temperature
called Curie temperature Tc ; Ferromagnetic is the property of materials to be strongly
attracted to a magnetic field and to become a powerful magnet. The source of
ferromagnetism namely.
1. Electrons given ferromagnetism must originate from partly filled shells in the free
atoms, in order that the energy bands formed from these shells have vacant quantum
state available for occupation when the electrons align their spins.
2. The density of state must be high so that the increase in kinetic energy due to the
promotion of electrons when these align their spins, shall be smaller than the decrease
in energy due to the exchange interaction.
For ferromagnetics the Curie temperature TC and the constant θ in the Curie-Weiss law
are nearly identical. A small difference exists, however, because the transition from
ferromagnetism to paramagnetism is gradual.
The most important ferromagnetic materials are Fe, CO, Ni, Gd the ferromagnetic
properties of the transition elements Fe, CO and Ni are due to the spins of the inner
unpaired electrons. In Fe, CO and Ni the unpaired inner 3d electrons are responsible
for the ferromagnetism the spins of the 3d electrons of adjacent atoms align in a parallel
direction by a phenomenon called spontaneous magnetization Ms. The parallel alignment
of atomic magnetic domains. The parallel alignment of the magnetic dipoles of atoms of
Fe, CO and Ni is due to the creator energy known as exchange interaction.
Using Heitler-London theory of chemical bonding, it can be shown that the total energy
of a system of two atoms contains an exchange energy term given by Vij − 2 J e S i S j .
Where Si and Si represent the spins of the two atoms and Je is the exchange integral
which is assumed to be the same for any pair of atoms.

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Consider the Curie temperature; for T > Tc the spontaneous magnetization is zero and an
external field will be have to be applied to produce some magnetization. This field
should, however, be weak enough to avoid the saturation state. In such a state, we find
gJ μ B Beff gJ μ B
equation χ= = ( B + λM ) ---------(i)
k1T kT
2J + 1 ⎛ 2 JH ⎞ 1 ⎛ χ ⎞
while B J (χ ) = cot h⎜ ⎟χ − cot h⎜ ⎟
2J ⎝ 2J ⎠ 2J ⎝ 2J ⎠
and Beff = B + B E = B + λM where M = NgJ μB B J (χ ) ----------(ii)
⎛ J + 1⎞
for that χ << 1 , B J (χ ) ≅ ⎜ ⎟χ
⎝ 3J ⎠
χ
Therefore, the expression (ii) become M = N g μ B ( J + 1)
3
gJ B (B + λM ) Ng 2 μ B2 J ( J + 1)
χ= ⇒M = ( B + λM )
kT 3kT
μ0 M μ 0TC / λ C
which gives χ = = =
B T − TC T − TC
C μ 0TC λNg 2 μ B2 J (J + 1)
χ= C= , TC =
T − TC λ 3k
This expression is known as curie-weiss law. It is satisfactory explain the susceptibility
and temperature dependence in paramagnetic region.
↑
↑
1/ χ Ferromagnetism
χ
TC T→ TC T→
Range χ >> 1 ≈ very large and + ve .

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MCQ (Multiple Choice Questions)

Q1. The two dimensional lattice of graphene is an arrangement of Carbon atoms forming a
honeycomb lattice of lattice spacing a, as shown below. The Carbon atoms occupy the
vertices.
1
c1
1
The Wigner-Seitz cell has an area of d2
1
c2
1
3 3 2
1
a1
1 1
(a) 6 3a 2 (b) a d1 b1
2
1
a2 b2
a
2 3 3 2
(c) 2a (d) a
4
Q2. A metal with body centered cubic (bcc) structure show the first (i.e. smallest angle)
diffraction peak at a Bragg angle of θ = 30o. The wavelength of X-ray used is 2.1 Ǻ. The
volume of the PRIMITIVE unit cell of the metal is
(a) 26.2 ( A0 ) (b) 13.1 ( A0 ) (c) 9.3 ( A0 ) (d) 4.6 ( A0 )

3 3 3 3
Q3. A simple cubic crystal with lattice parameter a c undergoes transition into a tetragonal
structure with lattice parameters at = bt = 2ac and ct = 2a c , below a certain

temperature. The ratio of the interplanar spacing of (1 0 1) planes for the cubic and the
tetragonal structure is
1 1 3 3
(a) (b) (c) (d)
6 6 8 8
Q4. Sodium metal transform from BCC to HCP structure at about 23K. The lattice constant in
cubic phase is 4.23A0 and assume that the density remains unchanged during the
transition and the ratio c/a = . The lattice constant in the hexagonal phase is
(a) a = 2.99A0 and c = 4.88A0. (b) a = 3.66A0 and c = 5.98A0
(c) a = 1.49A0 and c = 2.44A0 (d) a = 1.83A0 and c = 2.98A0

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Q5. The crystal structure of Zinc Sulphide (ZnS) is:

a⎛∧ ∧ ∧⎞
(a) HCP with two atoms basis of (0 0 0) and ⎜i + j + k ⎟
4⎝ ⎠
a⎛∧ ∧ ∧⎞
(b) HCP with two atom basis of (0 0 0) and ⎜i + j + k ⎟
2⎝ ⎠
a⎛∧ ∧ ∧⎞
(c) FCC with two atoms basis of (0 0 0) and ⎜i + j + k ⎟
2⎝ ⎠
a⎛∧ ∧ ∧⎞
(d) FCC with two atom basis of (0 0 0) and ⎜i + j + k ⎟
4⎝ ⎠
Q6. Consider X-ray diffraction from a crystal with a face-centered-cubic (fcc) lattice. The
lattice plane for which there is NO diffraction peak is
(a) (2, 1, 2) (b) (1, 1, 1) (c) (2, 0, 0) (d) (3, 1, 1)
Q7. A X-ray of wavelength 1.7A0 falls on the CsCl crystal. The atomic scattering factor of Cs
and Cl are related as fcs = 3fcl. The ratio of the intensity scattered from (100) plane to
(110) plane is
(a) I1 : I2 = 3 : 2 (b) I1 : I2 = 2 : 3
(c) I1 : I2 = 1 : 4 (d) I1 : I2 = 4 : 1
Q8. A narrow electron beam of electrons, accelerated under a potential difference, incident on
a crystal whose grating space is 0.3nm.If the 1st diffraction ring is produced at an angle
5.80 from the incident beam, then the momentum of the electron in Kgms-1 is
(a) 10.8 × 10 −26 (b) 10.8 × 10 −25
(c) 10.8 × 10 −24 (d) 10.8 × 10 −23
Q9. The Einstein frequency in a cesium solid is 1.724 × 1012 Hz . The Einstein temperature of
assume is
(a) 325 K (b) 165.4 K (c) 82.7 K (d) 330.8 K
Q10. If classical theory is applicable to solid then the thermal energy of 1g - mole of a material
at 300 K is
(a) 7470 J (b) 2490 J (c) 4980 J (d) 9960 J

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Q11. and inferatemic distance are of the order of a = 3 ×10−10 m . The Debye temperature is
[Assume cut-off frequency equal to debye frequencies
(a) 120 K (b) 240 K (c) 190 K (d) 360 K
Q12. The Debye temperature of Na metal is 150 K . The specific heat at 10 K is
(in J mole-1 K −1 )
(a) 0. 574 (b) 0.287 (c) 0.861 (d) 1.722
Q13. At a very low temperatures, the specific heat of rock salt varies with temperature as
3
⎛T ⎞
CV = A ⎜ ⎟ where A = 464 Cal mol-1 K −1 and θ D = 281 K . The amount of heat
⎝ θD ⎠
(in calorie) required to raise the temperature of n = 2 moles rock salt from 10 to 50 K is
(a) 31.6 (b) 94.8 (c) 126.4 (d) 63.2
Q14. The lattice specific heat of KCl at 5K is 3.8 ×10−2 J mol −1 K −1
(a) 2.43 × 10−1 (b) 2.43 × 10−2 (c) 2.43 × 10−3 (d) 2.49 × 10−4
Q15. At low temperature, the Debye temperature θ D for NaCl and KC l which have the same
crystal structure are 330 K and 220 K respectively. The lattice specific heat of K c l at
5K is 3.8 ×10−2 J mol −1 K −1

(a) 0.09 (b) 0.18 (c) 0.03 (d) 0.29
Q16. In the Debye model for a three dimensional crystal the internal energy U at low
temperature is given by
(a) U ∝ T (b) U ∝ T 2 (c) U ∝ T 3 (d) U ∝ T 4

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Q17. The experiment curve for θ D as T is

(a) (b)
↑ ↑
θD θD
T (k ) → T (k ) →
(c) (d)
↑ ↑
θD θD
T (k ) → T (k ) →
Q18. Which is incorrect as a Debye -formula?

3
⎛T ⎞
(a) CV = 464.4 ⎜ ⎟ Cal / mol − K
⎝ θD ⎠
3
⎛T ⎞
(b) CV = 1944 ⎜ ⎟ J / mol − K
⎝ θD ⎠
3
12 ⎛T ⎞
(c) CV = π 4 R ⎜ ⎟
5 ⎝ θD ⎠
3
5 ⎛T ⎞
(d) CV = π 4 R ⎜ ⎟
12 ⎝ θD ⎠
Q19. Debye theory of specific heat is valid at

(a) room temperature (b) low temperature
(c) intermediate temperature (d) all temperature

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Q20. Internal energy U vs T graph for Debye model is

(a) (b)
↑
↑ U
U
T→
T→
(c) (d)
↑
U ↑
U
T→
T→
Q21. Iron atoms crystallize in BCC structure with a lattice constant a = 2.86 A0 . The saturation
magnetization of iron is 1.74 x 106 Am-1. The value of magnetic dipole moment of an Fe
atom in term of Bohr magneton (μB) is
(a) 3.1 μB (b) 1.1 μB (c) 0.45 μB (d) 2.2 μB
Q22. The paramagnetic susceptibility of Fermi free electron gas with electron concentration
n = 4.7 x 1028 m-3 at T = 300 K is
(a) 2.0 x 10-4 (b) 2.0 x 10-5 (c) 2.0 x 10-6 (d) 2.0 x 10-7

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Q23. Following figure displays neutron diffraction data for scattering from a crystal of MnO,
which have the same structure as NaCl.
(111) (311)
T = 80 K
120
Ι (111)
(311)
T = 293 K
240 2θ
If the lattice constant at 293 K is a = 4.43 A0 , then approximate lattice constant at 80 K is

(a) 4.43 A0 (b) 2.2 A0 (c) 8.8 A0 (d) 11.12 A0
Q24. Following graph shows the variation of magnetic susceptibility (χ) for different type of
magnetic material
E
D
χ
C
B
T
A
Which of the following represent the correct combination?

(a) A – Metal, B – Diamagnet, C-Antiferromagnet, D – Ferromagnet and E-Paramagnetic
(b) A – Diamgnet, B – Antiferromagnet, C-Metal, D – Paramagnet, and Ferromagnet.
(c) A – Diamgnet, B – Metal, C- Antiferromagnet, D–Paramagnet, and E - Ferromagnet.
(d) A – Diamgnet, B – Metal, C- Antiferromagnet, D–Paramagnet, and E - Ferromagnet.

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Q25. In an experiment involving a ferromagnetic medium, the following observations were

made. Which one of the plots does NOT correctly represent the property of the medium?
(TC is the Curie temperature)
(a) (b)
1 / TC 1/ T
(c) (d)
TC T TC T
Q26. The temperature (T) dependence of magnetic susceptibility (χ) of a ferromagnetic

substance with a Curie temperature (Tc) is given by
C C
(a) , for T < Tc (b) , for T > Tc
T − Tc T − Tc
C C
(c) , for T > Tc (d) , for all temperatures
T + Tc T + Tc
where C is constant .

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Q27. Inverse susceptibility (1/χ) as a function of temperature, T for a material undergoing

paramagnetic to ferromagnetic transition is given in the figure, where O is the origin. The
values of the Curie constant, C, and the Weiss molecular field constant, λ, in CGS units,
are
1
(a) C = 5 × 10 −5 , λ = 3 × 10 −2 600 K
χ
(b) C = 3 × 10 −2 , λ = 5 × 10 −5
O T
(c) C = 3 × 10 −2 , λ = 2 × 10 4
(d) C = 2 × 10 4 , λ = 3 × 10 −2
− 2 × 10 4
(CGS unit)
Q28. The value of magnetic field at which the number of dipoles with mj = - ½ become twice
than that of dipoles with mj = + ½ at T = 2K is (μB = 9.27 x 10-24 Am2)
(a) 2.0 T (b) 2.1 T (c)1.03 T (d) 0.5 T
Q29. A system of spins (J = S = ½) is placed in a magnetic field H = 5 x 104 A-m. The fraction
of spins parallel to the field at T = 1 K
(a) 52 % (b) 62 % (c) 75 % (d) 95 %
Q30. The Fermi energy of one dimensional free electron gas confined in length L at absolute
zero is
2 2
⎛ Nπ ⎞ ⎛ Nπ ⎞
2 2
(a) ⎜ ⎟ (b) ⎜ ⎟
2m ⎝ L ⎠ 2m ⎝ 2 L ⎠
2 2
⎛ 2 Nπ ⎞ ⎛ 2 Nπ ⎞
2 2
(c) ⎜ ⎟ (d) ⎜ ⎟
2m ⎝ L ⎠ 2m ⎝ L ⎠
Q31. Consider a two dimensional electron gas of N electrons of mass m each in a system of
size L x L. The Fermi energy of the system of T = 0 K is
2
π2 ⎛ N ⎞ 2
π2 ⎛ N ⎞
(a) ⎜ ⎟ (b) ⎜ ⎟
2m ⎝ L2 ⎠ 2m ⎝ 2 L2 ⎠
2
π 2 ⎛ 2N ⎞ 2
π2 ⎛ N ⎞
(c) ⎜ ⎟ (d) ⎜ ⎟
2m ⎝ L2 ⎠ 2m ⎝ πL2 ⎠

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Q32. Consider a three dimensional gas of N electrons of mass m each in a system of size
L x L x L. The Fermi energy of the system at T = 0 K is
2/3 2/3
⎛ 3πN ⎞ ⎛π 2N ⎞
2 2
(a) ⎜ ⎟ (b) ⎜ ⎟
2m ⎝ V ⎠ 2m ⎜⎝ V ⎟⎠
2/3 2/3
2
⎛ 3π 2 N ⎞ 2
⎛ 3π 2 N ⎞
(c) ⎜ ⎟ (d) ⎜ ⎟
2m ⎜⎝ V ⎟⎠ 2m ⎜⎝ 2V ⎟⎠
Q33. The total ground state kinetic energy of N free electrons gas in one, two and three
dimension system is respectively (Fermi energy is EF)
1 1 3 2 1 5
(a) NE F ; NE F and NE F (b) NE F ; NE F and NE F
2 3 5 3 3 3
1 1 3 1 3 3
(c) NE F ; NE F and NE F (d) NE F ; NE F and NE F
3 2 5 3 2 5
Q34. Sodium atoms crystallic in BCC metal. The atomic radius of sodium is 1.86 Ǻ. The Fermi
energy of sodium at 0K is
(a) 5.11 eV (b) 6.01 eV (c) 3.11 eV (d) 4.21 eV
Q35. The density of state at a Fermi level for N electrons gas in one, two and three dimension
respective (EF is the Fermi energy)
N N 3 N N N 3 N
(a) ; and (b) ; and
2EF EF 2 EF 4EF EF 2 EF
N 2N 3 N N N 3 N
(c) ; and (d) ; and
EF EF EF 4EF 2EF 2 EF
Q36. The radius of the Fermi sphere of free electrons in a monovalent one dimensional metal
with the unit cell dimension of a is
πN πN 2πN πN
(a) (b) (c) (d)
a 2a a 3a
Q37. The radius of the Fermi sphere of free electrons in a monovalent two dimensional metal
πN πN 2πN 2πN
(a) 2
(b) 2
(c) (d)
a 2a a2 a2

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Q38. The radius of the Fermi sphere of free electrons in a monovalent three dimensional metal
1/ 3 1/ 3 1/ 3 1/ 3
⎛ 3π 2 N ⎞ ⎛ 2π 2 N ⎞ ⎛π 2N ⎞ ⎛ 3πN ⎞
(a) ⎜⎜ 3 ⎟⎟ (b) ⎜⎜ 3 ⎟⎟ (c) ⎜⎜ 3 ⎟⎟ (d) ⎜ 3 ⎟
⎝ a ⎠ ⎝ a ⎠ ⎝ a ⎠ ⎝ a ⎠
Q39. The velocity of non-relativistic free electrons in one-dimensional metal, at T = 0 is
(density of electrons is n )
π 2π π π
(a) n (a) n (a) n (a) n
m m 3m 2m
Q40. The velocity of non-relativistic free electrons in two-dimensional metal, at T = 0 is
(a) (2πn )1 / 2 (b) (πn )1 / 2 (c) (2πn )1 / 2 (d) (3πn )1 / 2

m 2m 2m 2m
Q41. The velocity of non-relativistic free electrons in three-dimensional metal, at T = 0 is
(a)
2m
(3π n ) 2 1/ 3
(b)
2m
(π n ) 2 1/ 3
(c)
m
(π n ) 2 1/ 3
(d)
m
(3π n )
2 1/ 3
Q42. Fermi energy of copper is 7.0 eV. The electronic heat capacity of one gram mole of Cu at
300 K is (in J mol-1K-1)
(a) 1.516 (b) 0.1516
(c) 0.01516 (d) 0.001516
Q43. If the debye temperature of Cu is 343K and Fermi energy 7.0 eV. The temperature of
which the electronic and lattice specific heat of Cu is equal, is
(a) 4.2K (b) 9.1K (c) 2.1K (d) 3.24K
Q44. The energy wave vector dispersion relation for one dimensional crystal of lattice constant
a using the tight binding model is E (k ) = E v − β − 2γ cos(ka ) . The bottom of the band is
located at k = 0 and is equal to E0 where E0 = Ev – β – 2γ. The effective mass of electron

at the bottom of the band is
2 2 2 2
(a) (b) (c) (d)
2γa 2 γa 2 4γa 2 3γa 2

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Q45. The energy wave vector dispersion relation for one dimensional crystal of lattice constant
a using the tight binding model is E (k ) = E v − β − γ cos(ka ) . The effective mass of
electron at the top of the band is
2 2 2 2
(a) − (b) − (c) − (d) −
3γa 2 γa 2 4γa 2 2γa 2
Q46. The energy of an electron in a band as a function of its wave vector k is given
by E (k ) = E 0 − 2 B (cos k x a + cos k y a + cos k z a ), where E 0 & B and a are constants. The
effective mass of the electron near the top of the band is

2 2 2 2 2
(a) − (b) − (c) − (d) −
3Ba 2 3Ba 2 2 Ba 2 Ba 2
Q47. A two dimensional metal has one atom of valency in a simple rectangular primitive cell
a = 2A0; b = 4A0. The radius of the free electron Fermi sphere, in cm-1 is.
(a) 1.756×10-10 (b) 1.756×10-8 (c) 0.88×10-10 (d) 0.88×10-12
Q48. If Cv and C p is the heat capacity at constant volume and constant pressure. Which of the
following statement is not true about the heat capacity of solid?

(i) For harmonic crystal, C p ≠ Cv
(ii) For anharmonic crystal, Cv = C p
(a) only (i) is true while (ii) is false (b) only (ii) is true while one is false
(c) both (i) and (ii) are true (d) neither (i) nor (ii) is true

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Q49. The variation The lattice specific heat C C of a crystalline solid can be obtained using the
Dulong Petit model, Einstein model and Debye model. At low temperature hω >> k BT ,
which one of the following statements is true (a and A are constants)?
3
⎛−a⎞ ⎛T ⎞
(a) Dulong Petit: C ∝ exp⎜ ⎟; Einstein: C=constant; Debey: C ∝ ⎜ ⎟
⎝ T ⎠ ⎝ A⎠
3
⎛T ⎞ ⎛−a⎞
(b) Dulong Petit: C =constant; Einstein: C ∝ ⎜ ⎟ ; Debey: C ∝ exp⎜ ⎟
⎝ A⎠ ⎝ T ⎠
3
e−a /T ⎛T ⎞
(c) Dulong Petit: C =constant; Einstein: C ∝ exp 2 ; Debey: C ∝ ⎜ ⎟
T ⎝ A⎠
3
⎛T ⎞ e−a /T
(d) Dulong Petit: C ∝ ⎜ ⎟ ; Einstein: C ∝ exp ; Debey: C = constant
⎝ A⎠ T2
o o o
Q50. A plane makes inter of 5 A, 4 A and 3A on the crystallographic axes of orthorhombic
crystal whose lattice parameter are in ratio of a : b : c = 1: 2 : 3 . The Miller indices of this
plane is
(a) ( 5 2 1) (b) ( 2 5 10 ) (c) (1 2 5 ) (d) ( 5 4 3)
Q51. The index of line common to the planes (111) and (110 ) is
(a) [110] (b) ⎡⎣ 110 ⎤⎦ (c) ⎡⎣10 1 ⎤⎦ (d) ⎡⎣ 101⎤⎦
Q52. The packing fraction of simple Hexagonal structure is

(a) 72%
(b) 74%
(c) 40%
(d) 92%

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Q53. Two dimensional discs of each radius r is arranged in closely packed arrangement as
shown below. The packing fraction of this structure is
π π
(a) (b)
3 3 3
π π
(c) (d)
2 3 4 3
Q54. An X - ray diffraction experiment is carried out on a crystalline solid having FCC
structure at room temperature. The undergoes a phase transition and shows orthorhombic
structure with small decrees in its unit cell length as compared to the FCC unit cell
length. As a result (135 ) line of the XRD pattern corresponding to the FCC system
(a) will split into 5 (b) will split into 6

(c) will split into 8 (d) will split into 9
Q55. The density of α -Iron is 7860 kg / m3 and atomic weight is 55.85 amu . The radius of
atoms in α -iron, which has a BCC structure is
o o o o
(a) 2.87 A (b) 1.24 A (c) 2.48 A (d) 4.9 A
Q56. For a cubic crystal the diffraction line from the planes with h 2 + k 2 + l 2 = 8 is observed at
an angle of diffraction 10.23o . It only one line is observed at an angle lower than this, the
crystal structure is
(a) simple cubic (b) BCC
(c) FCC (d) diamond cubic
Q57. Consider the planes with indices (100 ) and ( 001) ; the lattice is FCC , and these Miller
indices refers to the conventional unit cell. The primitive cell of the FCC is Trigonal.
The indices of these planes when referred to the primitive axes of FCC is
(a) (101) & ( 011) (b) ( 011) & (110 )
(c) (101) & (110 ) (d) (101) & (111)

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Q58. In crystallographic notation the OP in the cubic cell in the figure is

z
(a) [ 221] a P
(b) ⎡⎣12 2 ⎤⎦ a
2
(c) ⎡⎣12 1 ⎤⎦ O
y
(d) ⎡⎣ 2 21⎤⎦
x
Q59. A beam of X -rays is incident on a sodium chloride (lattice constant = 0.282 nm ). The
first-order Bragg reflection is observed at a glancing angle of 8o . At what angle will be

the 2nd order Bragg reflection occur?
(a) 16.16o (b) 18.2o (c) 15.1o (d) 12.12o
Q60. Electrons are accelerated under 344V and then reflected from a crystal. The first
reflection maxima occur when the glancing angle is 60o . The interplanar spacing of the
crystal is
o o o o
(a) 0.285 A (b) 1.14 A (c) 0.76 A (d) 0.38 A

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NAT (Numerical Answer Type)

Q61. The valence band of a simple cubic metal has formed E = Ak 2 + B where A = 10−38 Jm 2 .
m*
The value of = .....
m
Q62. Assuming the free electron theory, the Fermi energy of Aluminium ( FCC ) with a = 4 Ao
is ….. eV
0
Q63. In a one-dimensional lattice of interatomic separation of 2.3 A , the maximum wavelength
0
of the electron that gets energy reflected is ….. A
Q64. The Fermi energy of metal is 2.1 eV , the electron concentration (number of electrons per
unit volume) is …….. ×1028 / m3

Q65. Fermi energy of Cu metal is 7.05eV, the electronic specific heat of Cu at 600 K is
……..…. J ( k mol ) K −1
−1
Q66. The temperature at which there is one percent probability that a state with on energy
0.2 eV above the Fermi energy will be occupied by an electron is ……. K
Q67. The Fermi energy of silver is 5.51eV . The average energy of the free electrons in silver
at 0K is……
Q68. Each copper atom contributes one free electron to the electron gas. The density of copper
is 8.94 ×103 kg / m3 and its atomic mass is 63.5 amu . The Fermi energy in copper is
….….. eV
Q69. If the Debye’s temperature of a metal is 450 K , the Debye’s frequency is …. GHz
Q70. The Debye temperature of carbon (diamond) is 1850 K . The specific heat per k mol for
diamond at 20 K is …… J ( k mol ) K −1
−1
Q71. If the classical Theory of lattice specific heat is valid, the thermal energy of one mol of
copper at the Debye temperature is ……. J (where θ D = 340 K )

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Q72. The Debye temperature for aluminium as obtained from specific heat measurement is
375 K , the Debye frequency for aluminium is …… ×1012 Hz
Q73. A system of oscillators at temperature 300 K has a certain number of them carrying an
energy E = 10−21 J and a certain number carrying twice this energy. The ratio of the
number of oscillators in these two energy states is ……
Q74. A metal with atomic weight 55.85 amu has lattice parameter 0.29 nm and density of
7870 kg / m3 . The number of atoms per unit cell is …..

Q75. Copper has FCC structure and the atomic radius is 0.1278 nm . The interplanar spacing
for ( 321) plane is …… A

o
Q76. Zinc has hcp structure. The height of the unit cell is 0.494 nm . The nearest neighbour
distance is 0.27 nm . The atomic weight of zinc is 65.37 . The density of zinc is
…..….. kg / m3
Q77. The lattice constant of the unit cell of α -iron is 0.287 nm . The number of atoms in plane
(100 ) is ….. ×1010 atoms / mm 2 . [Note: - α -iron has bcc structure]
In a crystal whose lattice primitives are 1.2 A,1.8 A and 2.0 A a plane ( 231) cuts an
o o o
Q78.
o o
intercept of 1.2 A on the x -axis. The corresponding intercepts on the z -axes is …. A
In a tetragonal lattice a = b = 2.5 A, c = 1.8 A . The lattice spacing between (111) planes is
o o
Q79.
o
….. A
o ⎛ o⎞
Q80. X - Ray of wavelength 0.71 A incident on a simple cubic crystal ⎜ a = 2.814 A ⎟ . The
⎝ ⎠
glancing angle of the (110 ) plane corresponding to the second-order diffraction
maximum is ……..degree.

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Q81. The wavelength of X -ray is 0.1537 nm . This radiations when diffracted from (111)
planes of a crystal with FCC structure, corresponds to a Bragg angle of 19.2o . The
o
lattice constant of FCC crystal is …..….. A
Q82. Electrons are accelerated by 844V and are reflected from a crystal. The refection
maximum occurs when the glancing angle is 58o . The interplanar spacing of the crystal is
o
…….….. A
Q83. The ratio of second to first nearest neighbour distance in BCC crystal is ……

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MSQ (Multiple Select Questions)

Q84. Which of the following statements are correct for the Debye specific heat
(a) In one dimension CV varies as T
(b) In two dimension CV varies as T 2
(c) In three dimension CV varies as T 3
(d)In two dimension CV is constant when T > θ D

Q85. The classical value of molar lattice specific heat of solid in different dimensions is
1
(a) In 1D, CV = R (b) In 1D, CV = R
2
3
(c) In 2 D, CV = 2 R (d) 2 D, CV = R
2
Q86. Which of the following statement are correct from experimental facts about heat capacity
of solid?
(a) At low temperature, the heat capacity decreases sharply as T 3
(b) At low temperature, the heat capacity decreases as T
(c) If metal become super conduction, the decrease is even faster
(d) In magnetic solids, the heat capacity increase near the curie temperature
Q87. Which of the following statements are correct for the limitation of the debye theory of
lattice specific heat?
(a) Debye’s model is valid for long wavelengths only
(b) Debye’s temperature θ D depends on temperature
(c) Debye theory takes into account the interaction among the atoms
(d) The total number of vibrational modes are 3 N
Q88. Which of the following statements are correct for Einstein model of lattice heat capacity
(a) A crystal consists of dependent harmonic oscillators
(b) All the oscillators vibrate with the same natural frequency
(c) The oscillators are quantum oscillators and have discrete energy
(d) Any number of oscillators may be present in the same quantum state

fiziks
Q89. Which of the following processes increases the resistivity of a metal

(a) The metal is heated (b) The metal is purified
(c) The metal is cooled (d) Imperfections are introduced into the metal
Q90. The effective mass of an electron in a semiconductor is
(a) negative near the top of the band (b) positive near the bottom of the band
(c) zero near the centre of the band (d) Infinite near the top of the band
Q91. Which of the following correctly represent the relation
E
between electron and holes for given condition and Q
conduction band
valence band
(a) kh = − ke ω
ke kh
(b) vh = −ve k
E ⊗ Valence band
(c) mh = − me
(d) Eh = − Ee electron removed
Q92. Which of the following correctly represent the variation of density of electron in different
dimensions
(a) (b)
↑ ↑
ρ 1D ρ 2D
E → E →
(c) (d)
↑ 2D ↑
ρ ρ 1D
E → E →

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Q93. Which of the following correctly represent the expression of Fermi energy
2
⎛πN ⎞
2
(a) In one dimension EF = ⎜ ⎟
2m ⎝ L ⎠
2
⎛πN ⎞
2
(b) In one dimension EF = ⎜ ⎟
2m ⎝ 2 L ⎠
⎛πN ⎞
2
(c) In two dimension EF = ⎜ ⎟
2m ⎝ L2 ⎠
⎛ 2π N ⎞
2
(d) In two dimension EF = ⎜ ⎟
2m ⎝ L2 ⎠
Q94. Which of the following statements are correct expression of density of state for
relativistic electrons
1
(a) In 3 dimension ρ ∝ E 2
(b) In 3 dimension ρ ∝ E 2
(c) In 2 dimension ρ ∝ E (d) In 2 dimension ρ ∝ E o

Q95. Which of the following is the correct expression for relativistics electron in one
dimension
4L
(a) Density of state is
c2
hc ⎛ N ⎞
(b) Fermi energy is EF = ⎜ ⎟
4 ⎝L⎠
c⎛N⎞
(c) Fermi temperature is TF = ⎜ ⎟
4k ⎝ L ⎠
π mc N
(d) Fermi wave vector is k F = .
L

fiziks
Solutions (MCQ)
Ans. 1: (d)
Area of normal cell
Solution: Area of Wigner-Seitz cell =
Ne f f
1
Where Neff = effective number of lattice paints = 6 × =2
3
3 3 2 3 3 2 3 3 2
Area of normal cell = a ∴ Area of wigner-Seitz cell = a /2 = a
2 2 4
Ans. 2: (b)
a
Solution: According to Bragg’s law 2d sin θ = λ where d =
h2 + k 2 + l 2
For BCC structure the first diffraction peak appear for (110) plane.
a
∴ d=
2
2a 1
Now sin 300 = λ ⇒ 2a sin 300 = 2.1A0 ⇒ 2 a× = 2 .1 A 0 ⇒ a = 2 × 2 .1 A 0
2 2
∴a = 2.97 A 0
The volume primitive unit cell of BCC is =

a 3 26.2 0
2
=
2
A ( ) 3
( )
= 13.1 A 0
3
Ans. 3: (c)
Solution: For Cubic Lattice
For Tetragonal lattice
dc 3
Therefore the ratio is =
dt 8

fiziks
Ans. 4: (b)
Solution: For BCC, 4r =
For HCP, 2r = a and c = 5.98A0
Ans. 5: (d)
Solution: ZnS has a Diamond structure whose primitive cell contains two atoms one is of Zn and
other is of S placed at (000) and (1/4 1/4 1/4)
Ans. 6: (a)
⎛1 1 ⎞ ⎛1 1⎞ ⎛ 1 1⎞
Solution: In FCC there are 4 atoms at (0 0 0), ⎜ 0 ⎟ , ⎜ 0 ⎟ and ⎜ 0 ⎟
⎝2 2 ⎠ ⎝2 2⎠ ⎝ 2 2⎠
Thus the crystal structure factor is
∴ F = f [1 + eπi(h + k) + eπi(h + l) + eπi(k + l)]
And F = 4f ⇒ F2 = 16f2 : If h, k, l are unmixed
While F = 0 ⇒ F2 = 0 : If h, k, l are mixed
∴ Present planes are: (1 1 1), (2 0 0), (1 1 1)
Absent plane is: (2 1 2)
Ans. 7: (c)
Solution: The structure factor F is defined as
Where (h k l) are miller indices and ( are position of the atoms.

In CsCl crystal, the unit cell consist 8 Cs atoms at the corner and one Cl atom at the body
center. Unit cell has 2 effective number of atoms, one Cs atom at (0 0 0) and one Cl atom
at (1/2 1/2 1/2).
For (100) plane F1 = fcs - fcl and Intensity I1 = (fcs - fcl)2

For (110) plane F2 = fcs + fcl and Intensity I2 = (fcs + fcl)2
Given fcs = 3fcl
( f − fcl ) = 1
2
I
Therefore the ratio of intensity is 1 = cs
I 2 ( f cs + f cl )2 4

fiziks
Ans. 8: (c)
Solution: According to Bragg’s law 2dsinθ = nλ
Where d is the interplanar spacing, θ is angle of diffraction and λ is wavelength of
incident electrons beam.
According to De-Broglie relation λ = h/p where p is the momentum
Combining these two equations we get
2dsinθ = nh/p or p = nh/2dsinθ
Given n = 1, d = 0.3nm and θ = 5.80
Thus
Ans. 9: (c)
Solution: The Einstein temperature is
hvE
θE = , where vE = 1.724 × 1012 Hz , h = 6.62 ×10−34 J .S & k B = 1.38 ×10−23 J / K
kB
∴θ E =
( 6.62 ×10 −34
J .S )(1.724 × 1012 Hz )
⇒ θ E = 82.7 K
1.38 × 10−23 J / K
Ans. 10: (a)
Solution: According to the belong petit formula the thermal energy of a mole is
F = 3RT = 3 × ( 8.3 J / mol K ) × ( 300 K ) = 7470 J / mole
Ans. 11: (b)

v θ
Solution: vD = vmax = =
λmin 2a
θD =
hvD
=
hv
=
( 6.62 × 10−34 J .S ) ( 3000 m / sec )
=
6.62
×102
k 2ka 2 × (1.38 × 10 J / k )( 3 × 10 m ) 2.76
−23 −10
∴ θ D = 240 K

fiziks
Ans. 12: (a)

3
12 ⎛T ⎞
Solution: The molar specific heat is CV = π 4 R ⎜ ⎟
5 ⎝ θD ⎠
where T = 10 K , θ D = 150 K , R = 8.314 J / mole-K
3 3
12 ⎛ 10 ⎞ ⎛ 10 ⎞ 1936.4
CV = × π 2 × ( 8.314 J mol-1 K −1 ) ⎜ ⎟ = 1936.4 ⎜ ⎟ = = 0.574 J mol-1 K −1
5 ⎝ 150 ⎠ ⎝ 150 ⎠ 3375
Ans. 13: (d)
Solution: Heat required is
50
464 × 2 ⎡ T 4 ⎤
50 50
2K 116
θ = n ∫ CV dT = 3 ∫ T dT = 3
3 ⎢ ⎥ = ⎡504 − 104 ⎤⎦
3 ⎣
10
θ D 10 ( 281) ⎣ 4 ⎦10 ( 281)
116 × 2 232 × 624 × 104 232 × 624
= ×104 ( 625 − 1) = = = 63.2 cal
( 281) 22.19 × 106
3
22.9
Ans. 14: (c)

3 3
⎛T ⎞ −2 ⎛ 5 ⎞
Solution: CV = A ⎜ ⎟ , 3.8 × 10 = A ⎜ ⎟ (1)
⎝ θD ⎠ ⎝ θD ⎠
3
⎛ 2 ⎞
Assume at T = 2 K the specific heat is x ∴ x = A⎜ ⎟ (2)
⎝ θD ⎠
3
x ⎛2⎞ 8
Dividing equation (1) from equation (2) we get −2
=⎜ ⎟ =
9.8 × 10 ⎝ 5 ⎠ 125
8
x= × 3.8 × 10−2 ⇒ x = 2.43 × 10−3 J mol −1 K −1
125

fiziks
Ans. 15: (a)

3 3 3
⎛ 5 ⎞
−2 ⎛ 10 ⎞ ⎛T ⎞
Solution: For KCl : 3.8 ×10 = A ⎜ ⎟ and For NaCl x = A⎜ ⎟ ∵ CV = A ⎜ ⎟
⎝ 220 ⎠ ⎝ 330 ⎠ ⎝ θD ⎠
7 3 3
x ⎛ 10 ⎞ ⎛ 220 ⎞ 3⎛2⎞ 26 64 × 3.8
∴ −2
=⎜ ⎟ ×⎜ ⎟ =2 ⎜ ⎟ ∴ x= × 3.8 × 10−2 = ×10−2
3.8 × 10 ⎝ 330 ⎠ ⎝ 5 ⎠ ⎝3⎠ 27 27
x = 0.09 J mol −1 K −1
Ans. 16: (d)
Solution: The internal energy is
3
⎛ T ⎞ π4 3 4 T4
E = 9 Nk B ⎜ ⎟ × = π Nk B 3 ∴ E ∝T4
⎝ θ D ⎠ 15 5 θD
Ans. 17: (d)
Solution: According to Debye model, the Debye temperature is independent of temperature. But
experimental fact reveals that θ D first decreases and reach to minimum and than started
increasing with temperature. Thus option (d) is correct
Ans. 18: (d)
3
12 ⎛T ⎞
Solution: The specific heat is CV = π 4 R ⎜ ⎟ . Thus option (c) is correct.
5 ⎝ θD ⎠
If we put R = 8.314 J mol −1 K −1
3
12 ⎛T ⎞
∴ CV = × ( 3.14 ) × ( 8.314 J mol −1 K −1 ) ⎜ ⎟
4
5 ⎝ θD ⎠
3
⎛T ⎞
CV = 1944 ⎜ ⎟ J / mol.K . Thus option (b) is correct.
⎝ θD ⎠
Also 1 Cal = 4.18 J
3
⎛T ⎞
∴ CV = 464.4 ⎜ ⎟ Cal / mol.K . Thus option (a) is also correct.
⎝ θD ⎠

fiziks
Ans. 19: (b)

Solution: At high temperature i.e. T >> θ D , CV = 3R
Thus Debye theory is valid at low temperature
Ans. 20: (c)
3 T4
Solution: The internal energy is U = π 4 Nk B 3
5 θD
∴ U ∝T4
Thus graph (c) is correctly represent.
Ans. 21: (d)
neff 2
Solution: The number density of Fe crystal is = ⇒n= = 8.55 × 1028 m −3
( 2.86 ×10 ) −10 3
3
a
Here neff = effective number of atoms in BCC lattice.

The saturation magnetization (MS) is Ms = nμ
M S 1.74 × 10 6 Am −1
∴ μ= = −3
= 2.035 × 10 − 23 Am 2
n 8.55 × 10 m
28
while μ B = 9.27 × 10−24 Am 2 ∴ μ = 2.2μ B

Ans. 22: (b)
3μ 0 nμ B2
Solution: The paramagnetic susceptibility of Fermi free electron gas is χ =
2EF
where E F =
2
(3π n ) =
2 (1.054 × 10 ) (3π
2/3
−34 2
2
× 4.7 × 10 28 )
2/3
= 7.6 x 10-19 = 4.75 eV
−31
2m 2 × 9.1 × 10
∴χ =
(
3 × 4π × 10 −7 × 4.7 × 10 28 × 9.27 × 10 −24 )
2
⇒ χ = 2.0 x 10-5
7.6 × 10 −19

fiziks
Ans. 23: (c)

a
Solution: MnO has FCC lattice structure, thus the interplaner spacing is
h2 + k 2 + l 2
At 293 K : The lattice constant is a = 4.43 Ǻ
The peak (iii) appears at 2θ = 240
a
Thus θ = 12o and d =
3
At 80K,
Let a' is the lattice parameter
a'
Thus d ' = for (iii) and 2θ' = 120 ∴ θ' = 60
3
now from Bragg’s law 2d sin θ = nλ
a sin θ sin12o o
this gives 2d sin θ = 2d' sin θ' ⇒ a ' = = 4.43 × = 8.81 A
sin θ ' sin 6o
Ans. 24: (d)
Ans. 25: (c)
Ans. 26: (b)
Ans. 27: (c)
1 T − Tc
Solution: = and Tc = λ C . Here
χ C
Thus
Ans. 28: (c)
N1 ⎛ 2μ B ⎞ ⎛ N ⎞ 2μ B kT ⎛ N1 ⎞
Solution: Since = exp ⎜ B ⎟ ⇒ ln ⎜ 1 ⎟ = B ⇒ B = ln ⎜ ⎟
N2 ⎝ kt ⎠ ⎝ N2 ⎠ kT 2μ B ⎝ N 2 ⎠
⎛ 1⎞ ⎛ 1⎞
where N 1 ⎜ m j = ⎟ = 2 N 2⎜ m j = + ⎟
⎝ 2⎠ ⎝ 2⎠
1.38 ×10−23 × 2
∴ B= ln ( 2 ) ⇒ B = 1.03T
2 × 9.27 × 10−24

fiziks
Ans. 29: (a)

Solution: The field density B = μoH = 0.063 T
N1 ⎛ 2μ B ⎞ ⎛ 2 × 9.27 × 10−24 × 0.063 ⎞
Thus = exp ⎜ B ⎟ = exp ⎜ ⎟
N2 ⎝ kT ⎠ ⎝ 1.38 × 10−23 × 1 ⎠
N2 N N1
= exp ( 0.0846 ) = 1.083 ⇒ = 0.919 ⇒ 1 + 2 = 1.9188 ⇒ = 0.52
N1 N1 N1 + N 2
Thus the percentage of dipoles parallel to the field is
N1 N1
× 100 = × 100 = 52%
N N1 + N 2
Ans. 30: (b)
Solution: If the electron gas confined in one dimension rod of length L, then number of possible
L
states in between k and k + dk is g (k )dk = dk
π
2 1/ 2
k2 2mE ⎛ 2m ⎞ 1
Since, E = ⇒k = 2
∴ dk = ⎜ 2 ⎟ ⋅ E −1/ 2 dE
2m ⎝ ⎠ 2
1/ 2
L ⎛ 2m ⎞ 1 −1/ 2
∴ g ( E )dE = × ⎜ 2 ⎟ E dE
π ⎝ ⎠ 2
Since, electrons have spin ±1/2. So multiply above equation with 2.
1/ 2
L ⎛ 2m ⎞
g ( E )dE = ⎜ ⎟ E −1 / 2 dE
π⎝ 2 ⎠
At T = 00 K.
Total number of electron between E = 0 and EF is
EF 1/ 2 EF
L ⎛ 2m ⎞
N= ∫ F (E )g (E )dE ⇒ N = ∫E
−1/ 2
dE (Since F(E) = 1 at T=0K)
0 π ⎜⎝ 2 ⎟⎠ 0
1/ 2 1/ 2
L ⎛ 2m ⎞ E F1 / 2 2 L ⎛ 2m ⎞
= ⎜ 2 ⎟ = ⎜ ⎟ E F1 / 2
π⎝ ⎠ 1/ 2 π ⎝ 2 ⎠
2 2
2
π2 ⎛ N ⎞
⎛ πN ⎞
2
∴ EF = ⎜ ⎟ = ⎜ ⎟
2m ⎝ 2 L ⎠ 2m ⎝ 2 L ⎠

fiziks
Ans. 31: (d)

Solution: For two dimensional gas, the number of possible k- states in between k and k + dk is
2 2
⎛ L ⎞ ⎛ L ⎞
g (k )dk = ⎜ ⎟ 2π kdk = 2⎜ ⎟ 2π kdk
⎝ 2π ⎠ ⎝ 2π ⎠
It is multiply by 2 for electron gas.
2
2mE 2m ⎛ L ⎞ 2m
Since k = ∴ 2kdk = dE ∴ g ( E )dE = 2 ⎜ ⎟ π 2 dE
2
⎝ 2π ⎠
2 2
The total number of electrons of electrons at T = 0K is

2 EF
2m ⎛ L ⎞ 2m L2
N = 2π ⋅ 2 ⎜ ⎟
⎝ 2π ⎠
∫ dE
0
= 2π ⋅ 2
⋅
4π 2
EF
2
π 2 ⎛ 2N ⎞ 2
⎛ 2πN ⎞
EF = ⎜ 2⎟ = ⎜ ⎟
2m ⎝ πL ⎠ 2m ⎝ L2 ⎠
Ans. 32: (c)
Solution: For three dimensional gas
3 3
⎛ L ⎞ ⎛ L ⎞
g ( k ) dk = ⎜ ⎟ 4π k dk = 2 × ⎜
2
⎟ 4π k dk
2
⎝ 2π ⎠ ⎝ 2π ⎠
1/ 2
2mE ⎛ 2m ⎞ 1 −1 / 2
since k =
2
2
and dk = ⎜ 2 ⎟ E dE
⎝ ⎠ 2
3 1/ 2 3 3/ 2
⎛ L ⎞ 2mE ⎛ 2m ⎞ 1 −1/ 2 ⎛ L ⎞ ⎛ 2m ⎞
∴ g ( E ) dE = 2 × ⎜ ⎟ 4π 2 ⎜ 2 ⎟ E dE = ⎜ ⎟ 4π ⎜ 2 ⎟ E1/ 2 dE
⎝ 2π ⎠ ⎝ ⎠ 2 ⎝ 2π ⎠ ⎝ ⎠
Total number of electrons at T=0K is
3/ 2 E 3/ 2
⎛ L ⎞
3
⎛ 2m 2 ⎞ F
⎛ L ⎞
3
⎛ 2m 2 ⎞ 2
N =⎜ ⋅ π ∫E dE = ⎜ ⋅ π ×
1/ 2
⎟ 4 ⎜ ⎟ ⎟ 4 ⎜ ⎟
⎝ 2π ⎠ ⎝ ⎠ 0 ⎝ 2π ⎠ ⎝ ⎠ 3
2/3
⎛ 3π 2 N ⎞
2
This gives E F = ⎜ ⎟
2m ⎜⎝ V ⎟⎠
Ans. 33: (c)

fiziks
Ans.34: (c)
4r
Solution: For BCC lattice, a = = 4.295 Ǻ
3
Volume of the unit cell, V = a3 = 7.926 x 10-29 m3
2/3
⎛ 3π 2 N ⎞
2
Thus Fermi energy E F = ⎜ ⎟ = 3.11 eV
2m ⎜⎝ V ⎟⎠
Ans. 35: (a)

Solution: For 1D:
1/ 2
⎛ L ⎞⎛ 2m ⎞
density of state at Fermi level is ρ (E F ) = ⎜ ⎟⎜ 2 ⎟
E F−1 / 2
⎝ π ⎠⎝ ⎠
1/ 2
2 L ⎛ 2m ⎞
and total numbers of electrons N = ⎜ ⎟ E F1 / 2
π ⎝ 2 ⎠
N
These two equations gives ρ (E F ) =
2EF
For 2D:
2 2
⎛ L ⎞ 2m ⎛ L ⎞ 2m
ρ (E F ) = 2π ⎜ ⎟ 2 while N = 2π ⎜ ⎟ 2 EF
⎝ 2π ⎠ ⎝ 2π ⎠
N
Thus ρ (E F ) =
EF
For 3D:
3 3/ 2 3 3/ 2
⎛ L ⎞ ⎛ 2m ⎞ ⎛ L ⎞ ⎛ 2m ⎞ 2 1/ 2
ρ (E F ) = 4π ⎜ ⎟ ⎜ 2 ⎟ EF
1/ 2
and N = 4π ⎜ ⎟ ⎜ 2 ⎟ EF
⎝ 2π ⎠ ⎝ ⎠ ⎝ 2π ⎠ ⎝ ⎠ 3
3 N
Thus ρ (E F ) =
2 EF

fiziks
Ans. 36: (b)

2mE F
Solution: The Fermi radius is defined as k F = 2
2
⎛ πN ⎞
2
The Fermi energy in 1D is E F = ⎜ ⎟
2m ⎝ 2a ⎠
πN
Above two equation gives k F =
2a
Ans. 37: (c)
2mE F
⎛ 2π N ⎞
2
The Fermi energy in 2D is EF = ⎜ ⎟
2m ⎝ a 2 ⎠
2πN
Above two equation gives k F =
a2
Ans. 38: (a)
2mE F
2/3
⎛ 3π 2 N ⎞
2
The Fermi energy in 3D is E F = ⎜ ⎟
2m ⎜⎝ a 3 ⎟⎠
1/ 3
⎛ 3π 2 N ⎞
Above two equation gives k F = ⎜⎜ 3 ⎟⎟
⎝ a ⎠
Ans. 39: (d)
2
⎛ πN ⎞
2
Solution: Fermi energy in one dimension is E F = ⎜ ⎟
2m ⎝ 2a ⎠
Fermi velocity of electrons will be
2E F 2 2 ⎛ πn ⎞ π n
vF = = ⎜ ⎟=
m m 2m ⎝ 2 ⎠ 2m

fiziks
Ans. 40: (a)
⎛ 2π N ⎞
2
Solution: Fermi energy in one dimension is EF = ⎜ ⎟
2m ⎝ a 2 ⎠
2E F 2 2
Fermi velocity of electrons will be v F = = 2πn = 2πn
m m 2m m
Ans. 41: (d)
2/3
⎛ 3π 2 N ⎞
(3π n )
2 2
2/3
Solution: Fermi energy in one dimension is E F = ⎜ ⎟ = 2
2m ⎜⎝ a 3 ⎟⎠ 2m
Fermi velocity of electrons will be v F =

2EF
m
=
2 2
m 2m
(3π 2 n ) = (3π 2 n )
2/3
m
1/ 3
Ans. 42: (b)

Solution: The electronic heat capacity is Ce =γT
π 2 N A K B2
Where γ = electronic heat capacity constant =
2EF
π 2 × 6.023 × 10 23 × (1.38 × 10 −23 Jk −1 )

2
= −19
= 0.505 mJmol-1k-2
2 × 7.0 × 1.6 × 10
∴ at T = 300 K, Ce = 0.505 x 10-3 x 300 = 15.16 x 10-2 J mol-1K-1
Ans. 43: (d)
Solution: The lattice specific heat Cv = AT3
12π 4 N A k B 12π 4 6.023 × 10 23 × 1.38 × 10 −23
where A = × 3 = ×
5 QD 5 (343)3
A = 4.815 x 10-5 Jmol-1k-4
The electronic heat capacity Ce =γ T
When Cv = Ce ⇒ γT = AT3
γ γ 0.505 ×10−3 Jmol −1 K −2

∴T =2
or T = = = 10.49
A A 4.815 ×10−5 Jmol −1 K −4
T = 3.239 K

fiziks
Ans. 44: (a)

Solution: The dispersion relation is E (k ) = E v − β − 2γ cos(ka)
dE d 2E
where = 2γa sin( ka) ⇒ 2
= 2γa 2 cos(ka)
dk dk
2 2
The effective mass of the electron is m = *
=
d 2 E / dk 2 2γa 2 cos(ka)
2
The effective mass of electron at the bottom of the band (k = 0) is m * =
2γa 2
Ans. 45: (b)
Solution: The dispersion relation is E (k ) = E v − β − γ cos(ka )
dE d 2E
where = γa sin(ka) ⇒ 2
= γa 2 cos(ka)
dk dk
2 2
The effective mass of the electron is m * = =
d 2 E / dk 2 γa 2 cos(ka)
2
The effective mass of electron at the top of the band (k = ±π/a) is m * = −
γa 2
Ans. 46: (c)
Solution: Define new variable, k x' = k x − π / a , k y' = k y − π / a and k z' = k z − π / a
The dispersion relation becomes

( ( ) (
E (k ) = E 0 − 2 B (cos k x a + cos k y a + cos k z a ) = E 0 − 2 B cos k x' a + π + cos k y' a + π + cos k z' a + π ) ( ))
(
E (k ) = E 0 + 2 B cos k x' a + cos k y' a + cos k z' a )
Near the top of the band the k x → π / a, k y → π / a, k z → π / a
The new variable becomes k x → 0 k y → 0, k z → 0

' ' '
cos k x' a ≈ 1 −
2
(k x a ) ,
1 ' 2
cos k y' a ≈ 1 −
2
(k y a ) ,
1 ' 2
cos k z' a ≈ 1 −
2
(k z a )
1 ' 2

fiziks
E (k ) = E 0 + 2 B (cos k x' a + cos k y' a + cos k z' a ) = E 0 + 2 B⎜1 − (k x' a ) + 1 − (k y' a ) + 1 − (k z' a ) ⎟
⎛ 1 2 1 2 1 2⎞
⎝ 2 2 2 ⎠
= E 0 + 2 B⎜ 3 − a 2 (k x' + k y' + k z' ) ⎟ = E 0 + 6 B − Ba 2 k 2

⎛ 1 2⎞
⎝ 2 ⎠
2 2
Effective mass of the electron is m * = =−
d 2 E / dk 2 2 Ba 2
Ans. 47: (b)
Solution: Fermi radius is
π2 π2 π2 π2 π
k = k +k =
2
x
2
y 2
+ 2
= 2
+ 2
= 5
a b a 4a 2a
Ans. 48: (d)

Solution: The form of potential energy V(x) for a crystal including the anharmonic behavior is
V ( x ) = cx 2 − gx3 − fx 4 The 1st term i.e. cx2 is harmonic term while 2nd and 3rd terms (gx3
and fx4) are anharmonic terms.

The difference between the Cv and C p is proportional to the square of the temperature
coefficient of linear thermal expansion . Which is defined as, . Where r is

equilibrium inter-atomic distance and g is anharmonic constant.
Thus
For harmonic crystal g = 0 , so C p = Cv
While for anharmonic crystal g ≠ 0 g ≠ 0 , so C p ≠ Cv
Ans. 49: (c)

fiziks
Ans. 50: (b)

o o o
Solution: (i) Intercepts are x = 5 A, y = 4 A, z = 3 A
o o o
Whereas lattice constants are a = 1A, b = 2 A , & c = 3 A
o o o
x y z 5 A 4 A 3A
(ii) ∴ , , = , o , o = 5, 2,1
a b c 1Ao 2 A 3A
1 1
(iii) Reciprocal of these number are , ,1
5 2
⎛1 1 ⎞
(iv) Multiply with LCM , 10 × ⎜ , ,1⎟ = 2,5,10
⎝5 2 ⎠
∴ Miller Index is ( 2 5 10 )
y
Ans. 51: (b)
Solution: The plane (110 ) & (110 ) can be drawn in unit as
The crossed line common to (111) & (110 ) is ⎡⎣ 110 ⎤⎦ or ⎡⎣1 10 ⎤⎦ . ⎡⎣ 110 ⎤⎦
(110 )
(111) x
Ans. 52: (c)

4π 3
neff × r
Solution: Packing fraction P.F . = 3
V
1 1 1 1 3 3 3 3 3
Where neff = nc + n f + 1ni = × 12 + × 0 + 1× 0 = 2 , V = 6× a = a and a = 2r
6 2 6 2 4 2
3
4π ⎛ a ⎞
2π × ⎜ ⎟
3 ⎝2⎠ 4π a 3 2 2π
∴P.F . = = 2× × × = = 0.40 ( = 40% )
3 3 3 3 8 3 3a 3
a 3
a
2

fiziks
Ans. 53: (c)

neff × π r 2 a
Solution: For Hexagonal unit cell P.F . = r
A
1 1 1 1
where neff = π c + n f + 1× ni = × 6 + × 0 + 1× 1 = 3
3 2 3 2
2
⎛a⎞
3×π ⎜ ⎟
3 2 3 3 2 ⎝ 2⎠ a2 2 π
A = 6× a = a and a = 2r ∴ P.F = = 3π × × =
4 2 3 3 2 4 3 3a 2
2 3
a
2
Ans. 54: (b)
Solution: According to Bragg’s law
λ 1
2d sin θ = λ ⇒ sin θ = where d =
2d h 2
k2 l2
+ +
a 2 b2 c2
the different combination of (135 ) gives different ' d ' values and hence different angle θ
the possible combination of miller indices are (135 ) , (153) , ( 315 ) , ( 351) , ( 531) , & ( 513) .
Thus (135 ) will split into 6 peaks
Ans. 55: (b)

1
neff × M ⎡ n × M ⎤3
Solution: ρ = ⇒ a = ⎢ eff ⎥
NA × a ⎣ NA × ρ ⎦
3
where M = 55.85 kg , N A = 6.023 × 1026 , N eff = 2 and ρ = 7860 kg / m3

1
⎡ 2 × ( 55.85 kg ) ⎤3 1
∴ a=⎢ ⎥ = ⎡⎣ 2.36 × 10−29 ⎤⎦ 3 = 2.87 × 10−10 m
( )(
⎢⎣ 6.023 × 1026 7860 kg / m3 ) ⎥⎦
3 3 o
For bcc structure r = a= × 2.87 ×10−10 m = 1.24 A
4 4

fiziks
Ans. 56: (d)

Solution: The possible values of h 2 + k 2 + l 2 for different lattice is
For SC : h 2 + k 2 + l 2 = 1: 2 : 3 : 4 : 5 : 6 : 8 : 9 :10
For BCC : h 2 + k 2 + l 2 = 2 : 4 : 6 : 8 :10 :12
For FCC : h 2 + k 2 + l 2 = 3 : 4 : 8 :11:12
For DC : h 2 + k 2 + l 2 = 3 : 8 :11
Thus in diamond cubic, only one line is present below 8
Ans. 57: (a)
Solution: z ( 001)
The plane ( 001) with respect to primitive axes of FCC a , b & c ( )

is ( 011) whereas plane (100 ) w.r.t. primitive axes is (101) b′
c′ y
a′
Ans. 58: (d) x
Solution: Final co-ordinates 0, 0,1
1
Initial co-ordinates = 1,1,
2
1
Subtracting these two gives −1, − 1, ∴ Indices is ⎡⎣ 2 21⎤⎦
2
Ans. 59: (a)
Solution: From the Bragg’s law
2d sin θ = nλ
For n = 1 , λ = 2d sin θ = 2 × 0.282 × sin 8o = 0.0785 nm
For n = 2
nλ 2 × 0.0785 × 10−9 m
∴ sin θ = = −9
= 0.278 ⇒ θ = 16.16o
2d 2 × 0.282 ×10 m

fiziks
Ans. 60: (d)

Solution: The wavelength of the wave associated with electron is
h h h 150 ⎡ o⎤ 150 o o
λ= = = = ⎢ A⎥ = A = 0.66 A
mv 2mE 2meV V ⎣ ⎦ 344
From Bragg’s law 2d sin θ = nλ
For n = 1, θ = 60o
nλ 1× 0, 66 × 10−10 m 0.66 ×10−10 o

d= = = = 0.38 A
2sin θ 2 × sin 60 o
2 × 0.866
NAT
Ans. 61: 0.604
∂E ∂2 E 2
Solution: E = Ak 2 + B ⇒ = 2 Ak and = 2 A . Now, m *
=
∂k ∂k 2 ∂2 E
∂k 2
(1.05 ×10 J .S )
2
−34
m* 2
1.10 × 10−68 1.10 11.0 m*
= = = = × 10 = ∴ = 0.604
m ⎛ ∂2 E ⎞
m⎜ 2 ⎟ ( 9.1×10 −31
kg ) ( 2 A ) 2 × 9.1× 10−31 × 10−38 18.2 18.2 m
⎝ ∂k ⎠
Ans. 62: 5.69
1
( )
1
⎛ 3π × 4 ⎞ 1 2 12π 2 3
Solution: The Fermi radius is K F = ( 3π 2 n ) = ⎜
3
⎟ =
3
3
⎝ a ⎠ a
(1.05 × 10−34 J .S )
2
2 2 2
K F2 2
2 3 1 1 1
EF = = (12π ) =
2 × ( 9.1× 10−3 kg )
(12π )
2 3
× × eV
( 4 ×10 m )
−19
2m 2m a 2 −10
2
1.6 × 10
24.1× 10 10−68 2631.9

= × −70 eV = = 5.69 eV
18.2 × 16 × 1.6 10 45.9

fiziks
Ans. 63: 4.6

a
Solution: The Bragg’s law is 2d sin θ = λ where d =
2
+ k2 + l2
For maximum wavelength, θ = 90o ∴ λ = 2a where a = 2.3 × 10−10 m

o
∴ λ = 4.6 A
Ans.64: 1.38
2 3
⎛ h 2 ⎞ ⎛ 3n ⎞ 3 ⎛ π ⎞ ⎛ 8m ⎞ 2 2
3
Solution: EF = ⎜ ⎟ ⎜ ⎟ ⇒ n = ⎜ ⎟ ⎜ 2 ⎟ EF
⎝ 2m ⎠ ⎝ 8π ⎠ ⎝ 3 ⎠⎝ h ⎠
where EF = 2.1 eV = 2.1×1.6 × 10−19 J , h = 6.02 × 10−34 J .S , m = 9.1×10−31 kg

3
⎛ π ⎞ ⎛ 8 × 9.1× 10 kg ⎞2
−31 3
n = ⎜ ⎟⎜ (
⎟ 2.1× 1.6 ×10−19 ) 2 ⇒ n = 1.38 × 1028 / m3
(
⎝ 3 ⎠ ⎜⎝ 6.62 ×10−34 J .S ) ⎟
⎠
Ans. 65: 2.995
π 2k 2 N A
Solution: Ce = T
2 EF
Where EF = 7.05 × 1.6 ×1.6 × 10−19 J , K = 1.38 × 10−23 J / K , T = 800 K
and N A = 6.02 × 1026
( ) ( 6.02 ×10 ) × 600 ⇒ Ce = 2.995 J ( kmol )

2
n 2 × 1.38 × 10−23 J / K 26
−1
Ce = −19
K −1
2 × 7.05 × 1.6 ×10 J
Ans. 66: 505
1 1 1 1
Solution: F ( E ) = ( E − EF ) / kT
⇒ = 0.2 / kT ⇒ 0.01 =
e +1 100 e +1 e 0.2 / kT
+1
1 − 0.01 0.2 eV
⇒ 0.01e0.2 / kT + 0.01 = 1 ⇒ e0.2 / kT = = 99 ∴ = 2.303log10 99
0.01 kT
0.2 eV 0.2 ×1.6 × 10−19 3, 2 × 104
T= = = = 505 K ⇒ T = 505 K
2.303 K log10 99 2.303 × 1.995 × 1.38 ×10−23 634

fiziks
Ans. 67: 3.306

3 3
Solution: The average energy at 0K is given by E0 = EF = × 5.51 eV ⇒ E0 = 3.306 eV
5 5
Ans.68: 7.04
N ρNA
Solution: The electron density n = is n = Z .
V M
where Z = 1, ρ = 8.94 × 103 kg / m3 , N A = 6.073 × 1026 atoms / k mol & M = 63.5 kg
∴ n = 1×
(8.94 ×10 3
)(
kg / m3 6.023 ×1026 )
63.5 kg
( )
2 2 2
h 2 ⎛ 3n ⎞ 3 6.63 × 10−34 J .S ⎛ 3 × 8.48 × 1028 ⎞ 3 −18
EF = ⎜ ⎟ ∴ EF = ⎜ ⎟ = 1.13 × 10 J = 7.04 eV
2m ⎝ 8π ⎠ ( )
2 9.1 × 10 (
−31
kg ⎝ 8π )
⎠
Ans. 69: 9372.2

vD
Solution: The Debye temperature θ D is defined as θ D = where vD is Debye frequency
kB
θ D kB
∴ vD = where θ D = 450 K , k B = 1.38 ×10−23 JK −1 and h = 6.626 × 10−34 J .S
( 450 K ) (1.38 ×10−23 J /K )= 6.21×10−21

∴ vD =
6.626 × 10−34 J .S 6.626 ×10−34
vD = 9.372 × 1012 Hz ⇒ vD = 9372.2 × 109 Hz ⇒ vD = 9372.2 GHz
Ans. 70: 2.456

3
12 ⎛T ⎞
Solution: The specific heat is CV = π 4 R ⎜ ⎟
5 ⎝ θD ⎠
where R = 8.314 J mol −1 K −1 , θ D = 1850 K and T = 20 K
3
12 ⎛ 20 K ⎞
(
∴ CV = π 4 × 8.314 J mol −1 K −1 ⎜
5
⎟ )
⎝ 1850 K ⎠
= 1943.66 × 1.2635 ×10−6 = 2.4558 ×10−3 J mol −1 K −1 = 2.456 J kmol −1 K −1

fiziks
Ans. 71: 4239

3 3
Solution: The thermal every is E = k BT ⇒ E = k Bθ D ∵ T = θ D
2 2
3
For on mole of copper E = N A k Bθ D
2
atoms
where θ D = 340 K , N A = 6.023 × 1023 & k B = 1.38 ×10−23 J K -2
mol
3
∴ E=
2
( )( )
6.023 ×1023 1.38 ×−23 J/K ( 340 K ) ⇒ E = 4238.99 = 4239 J
Ans. 72: 7.8

hvD θ k
Solution: Relation between Debye temperature and Debye frequency is θ D = ⇒ vD = D B
kB h
where θ D = 375 K , k B = 1.38 ×10−23 J / K & h = 6.62 × 10−34 J .S
( 375 K ) (1.38 ×10−23 J /K ) ⇒v

∴ θD = −34 D = 7.8 × 1012 Hz
6.62 ×10 J .S
Ans. 73: 1.27
−( E2 − E1 ) −ΔE
N 1.38 × 10−23 × 300
Solution: 2 = e kT
=e kT
where kT = = 0.0259 eV
N1 1.6 ×10−19
−21 10−21
and ΔE = 10 J= = 0.0063 eV
1.6 × 10−19
ΔE ⎛ 0.0063 ⎞
N N1 ⎜ ⎟ N
now 1 = e kT ∴ = e⎝ 0.0259 ⎠ = 1.27 ⇒ 1 = 1.27
N2 N2 N2
Ans. 74: 2
neff × M ρ N Aa3
Solution: ρ = ⇒ neff =
N A × a3 M
Where ρ = 7870 kg / m3 , N A = 6.023 × 1026 , a = 2.9 × 10−10 m and M = 55.85 kg
( 7870 kg / m )( 6.023 ×10 )( 2.9 ×10 )

3
3 26 −10
m
∴ neff = =2
55.85

fiziks
Ans. 75: 0.966

4r
Solution: The relation between a and r f or FCC is 2a = 4r ⇒ a = = 2 2r
2
a 2 2r
∵ d hkl = ⇒ d hkl =
h +k +l
2 2 2
h + k2 + l2
2
where r = 1.278 × 10−10 m, ( hkl ) = ( 321)
∴ d321 =
(
2 2 1.278 × 10−10 m ) = 3.615 ×10 −10
= 0.966 × 10−10 m = 0.966 A
o
32 + 22 + 11 14
Ans. 76: 6960

neff × M
Solution: density is ρ =
N A ×V
3 3 2
For hcp, neff = 6 and V = a c , where a = 2.7 ×10−10 m and c = 4.94 ×10−10 m
2
3 3
( ) ( 4.94 ×10 )
2
V= × 2.7 × 10−10 m −10
m = 9.36 × 10−29 m3
2
6 × ( 65.37 kg ) 392.22
Thus ρ = = = 6960 kg / m3
( 6.023 ×10 )( 9.36 ×10
26 −29
m 3
) 0.05635
Ans. 77: 1200

neff
Solution: The number of atoms in plane ( hkl ) is n =
A
where neff = no of atoms in plane ( hkl ) and A = Area of plane ( hkl )
1
In BCC for (100 ) plane neff = 1 and A = a 2 ∴ N =
a2
where a = 2.87 ×10−10 m
1 1
∴ N= = = 1.2 × 1013 = 1200 × 1010 atoms / mm 2
( −10
2.87 ×10 m ) (
2.87 ×10−7 mm )
2

fiziks
Ans. 78: 4
Solution: Let p, q and r be the intercepts on the x, y and z -axis respectively. Then from the
law of rational indices
a b c 1.2 1.8 2.0 1.2 o
p:q:r = : : = : : = 0.6 : 0.6 : 2.0 ⇒ = 1 ⇒ r = 1.2 A
h k l 2 3 1 q
q 0.6 1.2 0.6 2.4 o
Similarly = ⇒ = ⇒r= ⇒r =4A
r 2 r 2 0.6
o
∴ The intercept on z -axes is 4 A
Ans. 79: 1.26
−1
1 1 ⎡ 2 1 ⎤2
Solution: d hkl = ∴ d111 = =⎢ +
h2 + k 2 l 2 12 + 12 12 ⎣ 6.25 3.24 ⎥⎦
+ 2 +
( 2.5) (1.8)
2 2
a2 c
1
−1
⎡100 ⎤ 2
d111 = [ 0.63]
o
2 =⎢ ⎥ = 1.26 A
⎣ 63 ⎦
Ans. 80: 21
o
a 2.814 A 2.814 o
Solution: d hkl = ∴ d110 = = A
h2 + k 2 + l 2 12 + 12 + 0 2
nλ
From Bragg’s law: 2d110 sin θ = nλ ∴ sin θ =
2d110
o 2.814 o
where n = 2, λ = 0.71 A, d110 = A
2
o
2 × 0.710 A
∴ sin θ = = 0.357 ⇒ θ = sin −1 ( 0.357 ) = 21o
2.814 o
2× A
2

fiziks
Ans. 81: 4.05

nλ
Solution: From the Bragg’s law 2d sin θ = nλ ⇒ d =
2sin θ
1× 1.537 ×10−10 m
∴ d= = 2.336 × 10−10 m
(
2 × sin 19.2 o
)
The lattice constant is
( )
o
a = d h 2 + k 2 + l 2 = 2.336 × 10−10 m 11 + 12 + 12 = 4.046 × 10−10 m = 4.046 A
Ans. 82: 0.25

Solution: The wavelength of the wave associated with electrons
h h 150 o 150 o o
λ= = = A= A = 0.42 A
mv 2mE V 844
nλ
∴ 2d sin θ = nλ ⇒ d =
2sin θ
0.42 × 10−10 m o
For n = 1 ∴ d = = 0.25 × 10−10 m ⇒ d = 0.25 A
2 × sin 58o
Ans. 83: 0.866

Solution: The first nearest neighbour distance is = a
3a
The second nearest neighbour distance is =
2
3
a
second nearest neighbour distance 3
∴ = 2 = = 0.866
First nearest neighbour distance a 2

fiziks
MSQ
Ans. 84: (a), (b), (c) and (d)
Solution: All the statements are correct. The specific heat varies as T , T 2 and T 3 in 1D, 2 D and
3D whereas when temperature is greater than Debye temperature (T >> θ D ) the specific
heat of solid is CV = R
Ans. 85: (b) and (c)
Solution: In one dimension, average energy per oscillating particle is E = K .E + P.E
1
where K .E = P.E = k BT ∴ E = k BT
2
For one mole of substance: E = N A E ⇒ E = N A k BT = RT
dE
The specific heat is CV = =R
dT
In 2 -Dimension: K .E = P.E = k BT ∴ E = 2 k BT
For 1-mole of substance E = N A E = 2 N A k BT = 2 RT
dE
The specific heat is CV = = 2R
dT
Thus correct options are (b) & (c) only
Ans. 86: (a), (b), (c) and (d)
3
12 ⎛T ⎞
Solution: (a) In insulator, the specific heat in 3D is CV = π 2 R ⎜ ⎟ = BT 3
4 ⎝ θD ⎠
3 ⎛k T ⎞
(b) in metal the specific heat is Ce = Nk B ⎜ B ⎟ = AT
2 ⎝ EF ⎠
⎛ ΔE ⎞
(c) In superconductivity Ces = a exp ⎜ − ⎟
⎝ kT ⎠
The decrease is exponential which is faster than T & T 3
(d) In magnetic solids, the heat capacity increases near the curie temperature when the
magnetic moments become ordered.

fiziks
Ans. 87: (a) and (d)

Solution: (a) Debye model is a continuum model which is valid only for long wavelength
v0
(b) θ D = , thus θ D is independent of temperature
kB
(c) The theory does not take into account the actual crystalline nature of the solid. The
theory cannot be applied to crystals comprising max than one type of atoms
(d) The total number of vibrational modes are assumed to 3N
Ans. 88: (b), (c), and (d)
Solution: (a) A crystal consist of atoms which may be regarded as identical and independent
harmonic oscillators wrong option
(b) Due to the identical environment of each, all the oscillators vibrate with same
frequency. Correct option
(c) Correct option
(d) Correct option
Ans. 89: (a) and (d)
Solution: The resistively of metal increases because of tow reasons
(i) increases in electron-photon scattering. With increase in temperature the electron-
photon collision increase and hence resistively
(ii) electron impurity scattering with addition of more number of impurities the electrons
collision with impurity increases and hence resistively
Thus correct option are (a) and (d)

fiziks
Ans. 90: (a) and (b)

Solution: The variation of effective mass is +∞ +∞
⎛ k ⎞
2 2 m*
(a) Near the bottom of the band ⎜ F = ⎟
⎝ 2m0 ⎠ π π
−
2 2 a a
m =
*
= = m0 O k
d 2E ⎛ 2⎞
dk 2 ⎜ ⎟
⎝ m0 ⎠
m* = m (Rest mass of electron and positive) −∞
−∞
⎛ π⎞
(b) Near the top of the band ⎜ k = ± ⎟ the m* is negative i.e. m* = − m0
⎝ a⎠
Thus correct options are (a) and (b)
Ans. 91: (a), (c) and (d)
Solution: (a) kh = − ke (correct)
If an electron is missing from an orbital of wave vector ke the total wavevector of the
system is −ve and is attributed to the hole. kh + ke = 0 ⇒ kh = − ke
(b) vh = −ve (Incorrect)

The velocity of the hole is equal to the velocity of the missing electron. Form the figure
∂Eh ∂Ee
we see that vh = = = ve ⇒ vh = ve
∂kh ∂ke
(c) mh = − me (correct)
∂2E
The effective mass is inversely proportional to the curvature and for hole band this
∂k 2
has the opposite sign to that for an electron in the valence band. Near the top of the
valence band me is negative, so that mh is positive
(d) Eh = − Ee (correct)
If the band is symmetric. Then
Ee ( ke ) = Ee ( − ke ) = − Eh ( − kh ) = − Eh ( kh ) ⇒ Ee = − Eh

fiziks
Ans. 92: (a) and (c)

Solution: The density of state is
−1
In 1D ρ (F ) ∝ E 2
In 2 D ρ ( F ) ∝ Eo
1
In 3D ρ (F ) ∝ E2
Thus ↑ ↑ and ↑
2D
ρ 1D ρ ρ 3D
E → E → E →
Correct options are (a) and (c) only
Ans.93: (b) and (d)
2
⎛πN ⎞
2
Solution: The Fermi energy in one dimension is EF = ⎜ ⎟
2m ⎝ 2 L ⎠
⎛ 2π N ⎞
2
The Fermi energy in two dimension is EF = ⎜ ⎟
2m ⎝ L2 ⎠
Ans. 94: (b) and (c)
Solution: The dispersion relation of relativistic electrons is E = pc = kc
E dE
∴ k= and dk =
c c
In three dimension, the number k -states in range k and k + dk is
3
⎛ L ⎞
g ( k ) dk = 2π ⎜ ⎟ .4π k dk
2
⎝ 2π ⎠
3 2 2 3
⎛ L ⎞ E dE ⎛ L ⎞ E
g ( E ) dE = 8π ⎜ ⎟ . ⋅ = 8π ⎜ ⎟ ⋅ dE
⎝ 2π ⎠ ( c ) ⎝ 2π ⎠ ( c )
2 3
c
g ( E ) dE
3
⎛ L ⎞ E2
The density of state is ρ ( E ) = = 8π ⎜ ⎟ ∴ ρ ( E ) ∝ E2
⎝ 2π ⎠ ( c)
3
dE

fiziks
In two dimension, the number of k -states in range k and k + dk is

2
⎛ L ⎞
g ( k ) dk = 2 × ⎜ ⎟ 2π kdk
⎝ 2π ⎠
2 2
⎛ L ⎞ E dE ⎛ L ⎞ E
∴ g ( E ) dE = 2 ⎜ ⎟ 2π ⋅ × = 4π ⎜ ⎟ . dE
⎝ 2π ⎠ ⎝ 2π ⎠ ( c )
2
c c
Density of state is
g ( E ) dE
2
⎛ L ⎞ E
ρ (E) = = 4π ⎜ ⎟ ∴ ρ (E) ∝ E
⎝ 2π ⎠ ( c)
2
dE
Ans. 95: (b), (c), and (d)

Solution: The dispersion relation of relativistic electrons is
E 1
E = pc = kc ⇒ k = ⇒ dk = dE
c c
(a) The number of k -states in range k and k + dk in 1 dimension is
L 2 L dE 2 L dE
g ( k ) dk = 2 × dk = × =
π π c π c
2π
4L g ( E ) dE 4 L
g ( E ) dE = dE ∴ Density of state is ρ ( E ) = =
c dE c
(b) At T = 0 K , the number of electrons can be calculated as
EF EF
4L 4L c⎛ N ⎞
N= ∫ g ( E ) dE = ∫ dE = EF ∴ EF = ⎜ ⎟
0
c 0
c 4 ⎝L⎠
EF c ⎛N⎞
(c) Fermi temperature is TF = = ⎜ ⎟
K 4K ⎝ L ⎠
(d) The Fermi wave vector ( k F ) can be calculated as

2
k F2 2mEF
EF = ⇒ kF = 2
2m
1 1
⎛ 2m c N ⎞ 2 ⎛ 2m c N ⎞2 2π 2 mc ⎛ N ⎞ π mc ⎛ N ⎞
k F = ⎜ 2 × × ⎟ = ⎜ 2 × 4π 2 × × ⎟ = 9⎜ ⎟ = ⎜ ⎟
⎝ 4 L⎠ ⎝ 4 L⎠ ⎝L⎠ ⎝L⎠


Electronics Notes

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2.1.7 Breakdown Diodes

2.10.2 Case-II ( fixed Vi and variable RL )

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3. Bipolar Junction Transistors………………………………………………………..(111-152)

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4.4.6 Bandwidth with Feedback

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1.1 Metals, Semiconductors, and Insulators

such excitations. Thus an important difference between semiconductors and insulators is

Figure 1.1: Insulator Semiconductor Metal

1.2 Direct and Indirect Semiconductors

(a) Direct (b) Indirect

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On the other hand, an electron in the conduction band minimum of an indirect

Figure 1.3: Electron-hole pairs in a semiconductor.

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After excitation to the conduction band, an electron is surrounded by a large number of

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The effective mass of an electron in a band with a given ( E , k ) relationship is given by

m*p 0.37 m0 0.56 m0 0.48 m0

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1.4 Intrinsic Material

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At a given temperature there is a certain concentration of electron-hole pairs ni .

higher recombination rate ri (T ) just balances generation. At any temperature, we can

equilibrium concentration of electrons n0 and the concentration of holes p 0

The factor α r is a constant of proportionality which depends on the particular mechanism

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1.5 Extrinsic Material

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conduction band electron concentration n0 (this is p-type material).

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1.6 The Fermi Level

where k is Boltzmann constant. The function f ( E ) , the Fermi-Dirac distribution

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The Fermi function is symmetrical about EF for all temperatures;

probability ⎡⎣1 − f ( EF − ΔE ) ⎤⎦ that a state ∆E below EF is empty. The symmetry of the

is symmetrical about EF , the electron probability "tail" of f ( E ) extending into the

of electrons at Ec in n-type material implies a correspondingly smaller hole concentration

therefore the total electron concentration n0 ) increases as EF moves closer to Ec . Thus

the energy difference ( Ec − EF ) gives a measure of n .

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indicates how strongly p-type the material is.

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1.6.1 Electron and Hole Concentrations at Equilibrium

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where N c is the effective density of states in the valence band.

The probability of finding an empty state at Ev is,

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From these equations, the concentration of holes in the valence band is

The product of n0 and p0 at equilibrium is a constant for a particular material and

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Law of Mass Action

For n-type material the minority concentration (holes)

Another convenient way of writing electron and hole concentration is

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1.7 Temperature Dependence of Carrier Concentrations

by the fact that ni has strong temperature dependence ni = N c N v e ( − E g / 2 kT

ln ( ni ) vs 1000 / T appears almost linear (figure 1.10).

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1.8 Compensation and Space Charge Neutrality

material n0 = ni = p0 and intrinsic conduction is obtained. With further acceptor doping

the semiconductor becomes p-type with a hole concentration of essentially N A − N D .

Figure 1.11: Compensation in an n-type semiconductor ( N D > N A ) .

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Thus the net electron concentration in the conduction band is n0 = p 0 + ( N D+ − N A− ) .

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Example: The donor concentration in a sample of n -type silicon is increased by a factor

concentration p0 at 300 K ? Where is EF relative to Ei ? (where ni = 1.5 ×1010 cm −3 )

np = ni2 ( Law of mass) ⇒ n =