STM32L452xx

Ultra-low-power Arm® Cortex®-M4 32-bit MCU+FPU, 100DMIPS,

up to 512KB Flash, 160KB SRAM, analog, audio, ext. SMPS
Datasheet - production data

Features
• Ultra-low-power with FlexPowerControl
– 1.71 V to 3.6 V power supply LQFP100 (14×14) UFBGA100 (7×7) WLCSP64 UFQFPN48 (7×7)
LQFP64 (10×10) UFBGA64 (5×5) (3.36×3.66)
– -40 °C to 85/125 °C temperature range LQFP48 (7×7)
– 145 nA in VBAT mode: supply for RTC and – 2 PLLs for system clock, audio, ADC
32x32-bit backup registers
• Up to 83 fast I/Os, most 5 V-tolerant
– 22 nA Shutdown mode (5 wakeup pins)
– 106 nA Standby mode (5 wakeup pins) • RTC with HW calendar, alarms and calibration
– 375 nA Standby mode with RTC • Up to 21 capacitive sensing channels: support
– 2.05 µA Stop 2 mode, 2.40 µA with RTC touchkey, linear and rotary touch sensors
– 84 µA/MHz run mode (LDO Mode) • 12x timers: 1x 16-bit advanced motor-control,
– 36 μA/MHz run mode (@3.3 V SMPS 1x 32-bit and 3x 16-bit general purpose, 2x 16-
Mode) bit basic, 2x low-power 16-bit timers (available
in Stop mode), 2x watchdogs, SysTick timer
– Batch acquisition mode (BAM)
– 4 µs wakeup from Stop mode • Memories
– Brown out reset (BOR) – Up to 512 KB single bank Flash,
proprietary code readout protection
– Interconnect matrix
– 160 KB of SRAM including 32 KB with
• Core: Arm® 32-bit Cortex®-M4 CPU with FPU, hardware parity check
Adaptive real-time accelerator (ART
– Quad SPI memory interface
Accelerator™) allowing 0-wait-state execution
from Flash memory, frequency up to 80 MHz, • Rich analog peripherals (independent supply)
MPU, 100DMIPS and DSP instructions – 1x 12-bit ADC 5 Msps, up to 16-bit with
• Performance benchmark hardware oversampling, 200 µA/Msps
– 1.25 DMIPS/MHz (Drystone 2.1) – 1x 12-bit DAC output channels, low-power
sample and hold
– 273.55 CoreMark® (3.42 CoreMark/MHz @
80 MHz) – 1x operational amplifier with built-in PGA
– 2x ultra-low-power comparators
• Energy benchmark
– Accurate 2.5 V or 2.048 V reference
– 335 ULPMark™ CP score
voltage buffered output
– 104 ULPMark™ PP score
• 17x communication interfaces
• Clock Sources
– USB 2.0 full-speed crystal less solution
– 4 to 48 MHz crystal oscillator with LPM and BCD
– 32 kHz crystal oscillator for RTC (LSE) – 1x SAI (serial audio interface)
– Internal 16 MHz factory-trimmed RC (±1%) – 4x I2C FM+(1 Mbit/s), SMBus/PMBus
– Internal low-power 32 kHz RC (±5%) – 3x USARTs (ISO 7816, LIN, IrDA, modem)
– Internal multispeed 100 kHz to 48 MHz – 1x UART (LIN, IrDA, modem)
oscillator, auto-trimmed by LSE (better than
– 1x LPUART (Stop 2 wake-up)
±0.25 % accuracy)
– 3x SPIs (and 1x Quad SPI)
– Internal 48 MHz with clock recovery

October 2020 DS11912 Rev 7 1/221

This is information on a product in full production. www.st.com
 STM32L452xx

– CAN (2.0B Active) and SDMMC interface • CRC calculation unit, 96-bit unique ID
– IRTIM (Infrared interface) • Development support: serial wire debug
• 14-channel DMA controller (SWD), JTAG, Embedded Trace Macrocell™
• True random number generator • All packages are ECOPACK2® compliant
Table 1. Device summary
Reference Part numbers

STM32L452CC, STM32L452RC, STM32L452VC, STM32L452CE, STM32L452RE,

STM32L452xx
STM32L452VE

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STM32L452xx Contents

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1 Arm® Cortex®-M4 core with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2 Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 17
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.6 Firewall . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.7 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.8 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 20
3.9 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3.9.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.9.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.9.5 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.9.6 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.10 Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
3.11 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.12 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.13 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.14 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.14.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 38
3.14.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 38
3.15 Analog to digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.15.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.15.2 Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.15.3 VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
3.16 Digital to analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

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3.17 Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41

3.18 Comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.19 Operational amplifier (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.20 Touch sensing controller (TSC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.21 Digital filter for Sigma-Delta modulators (DFSDM) . . . . . . . . . . . . . . . . . . 43
3.22 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.23 Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.23.1 Advanced-control timer (TIM1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.23.2 General-purpose timers (TIM2, TIM3, TIM15, TIM16) . . . . . . . . . . . . . . 46
3.23.3 Basic timer (TIM6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
3.23.4 Low-power timer (LPTIM1 and LPTIM2) . . . . . . . . . . . . . . . . . . . . . . . . 47
3.23.5 Infrared interface (IRTIM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.23.6 Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.23.7 System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
3.23.8 SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.24 Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 48
3.25 Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.26 Universal synchronous/asynchronous receiver transmitter (USART) . . . 50
3.27 Low-power universal asynchronous receiver transmitter (LPUART) . . . . 51
3.28 Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
3.29 Serial audio interfaces (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52
3.30 Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
3.31 Secure digital input/output and MultiMediaCards Interface (SDMMC) . . . 53
3.32 Universal serial bus (USB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
3.33 Clock recovery system (CRS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
3.34 Quad SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 54
3.35 Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56
3.35.1 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 56
3.35.2 Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56

4 Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57

5 Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88

6 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92

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6.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92

6.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
6.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
6.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
6.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
6.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
6.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
6.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 98
6.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 98
6.3.4 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
6.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
6.3.6 Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
6.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 130
6.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 135
6.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
6.3.10 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
6.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
6.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
6.3.13 I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
6.3.14 I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
6.3.15 NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
6.3.16 Extended interrupt and event controller input (EXTI) characteristics . . 153
6.3.17 Analog switches booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
6.3.18 Analog-to-Digital converter characteristics . . . . . . . . . . . . . . . . . . . . . 154
6.3.19 Digital-to-Analog converter characteristics . . . . . . . . . . . . . . . . . . . . . 167
6.3.20 Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . 172
6.3.21 Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
6.3.22 Operational amplifiers characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 175
6.3.23 Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
6.3.24 VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
6.3.25 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
6.3.26 Communication interfaces characteristics . . . . . . . . . . . . . . . . . . . . . . 180

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7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193

7.1 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
7.2 UFBGA100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
7.3 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
7.4 UFBGA64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
7.5 WLCSP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
7.6 LQFP48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
7.7 UFQFPN48 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
7.8 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
7.8.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
7.8.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 215

8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219

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STM32L452xx List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table 2. STM32L452xx family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . 14
Table 3. Access status versus readout protection level and execution modes. . . . . . . . . . . . . . . . . 18
Table 4. STM32L452xx modes overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 5. Functionalities depending on the working mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Table 6. STM32L452xx peripherals interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 7. DMA implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Table 8. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 9. Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Table 10. DFSDM1 implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 11. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 12. I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 13. STM32L452xx USART/UART/LPUART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 14. SAI implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 15. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62
Table 16. STM32L452xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63
Table 17. Alternate function AF0 to AF7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Table 18. Alternate function AF8 to AF15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Table 19. STM32L452xx memory map and peripheral register boundary addresses . . . . . . . . . . . . 89
Table 20. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Table 21. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
Table 22. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Table 23. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 24. Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 25. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 26. Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Table 27. Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART enable (Cache ON Prefetch OFF) . . . . . . . . . . . . . . . . . . . . . . 104
Table 28. Current consumption in Run modes, code with data processing running from Flash,
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.10 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 29. Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 30. Current consumption in Run modes, code with data processing running from Flash,
ART disable and power supplied by external SMPS (VDD12 = 1.10 V). . . . . . . . . . . . . . 107
Table 31. Current consumption in Run and Low-power run modes, code with data processing
running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
Table 32. Current consumption in Run, code with data processing running from
SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V) . . . . . . . . . . . . . . . . . 109
Table 33. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART enable (Cache ON Prefetch OFF) . . . . . . . . . . . . . . . . . . . . . . 110
Table 34. Typical current consumption in Run, with different codes running from Flash,
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.10 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Table 35. Typical current consumption in Run, with different codes running from Flash,
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.05 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 36. Typical current consumption in Run and Low-power run modes, with different codes

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running from Flash, ART disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112

Table 37. Typical current consumption in Run modes, with different codes running from
Flash, ART disable and power supplied by external SMPS (VDD12 = 1.10 V) . . . . . . . . 112
Table 38. Typical current consumption in Run modes, with different codesrunning from
Flash, ART disable and power supplied by external SMPS (VDD12 = 1.05 V) . . . . . . . . 113
Table 39. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Table 40. Typical current consumption in Run, with different codesrunning from
SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V) . . . . . . . . . . . . . . . . . 114
Table 41. Typical current consumption in Run, with different codesrunning from
SRAM1 and power supplied by external SMPS (VDD12 = 1.05 V) . . . . . . . . . . . . . . . . . 114
Table 42. Current consumption in Sleep and Low-power sleep modes, Flash ON . . . . . . . . . . . . . 115
Table 43. Current consumption in Sleep, Flash ON and power supplied by external SMPS
(VDD12 = 1.10 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 44. Current consumption in Low-power sleep modes, Flash in power-down . . . . . . . . . . . . . 116
Table 45. Current consumption in Stop 2 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 46. Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 47. Current consumption in Stop 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Table 48. Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 49. Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Table 50. Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
Table 51. Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
Table 52. Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 53. Regulator modes transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 54. Wakeup time using USART/LPUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 55. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 56. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 57. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 58. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Table 59. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 60. MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137
Table 61. HSI48 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 62. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Table 63. PLL, PLLSAI1 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Table 64. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 65. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143
Table 66. EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 67. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 68. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145
Table 69. Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Table 70. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Table 71. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
Table 72. Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
Table 73. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Table 74. NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Table 75. EXTI Input Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 76. Analog switches booster characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 77. ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
Table 78. Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 79. ADC accuracy - limited test conditions 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Table 80. ADC accuracy - limited test conditions 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Table 81. ADC accuracy - limited test conditions 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162

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Table 82. ADC accuracy - limited test conditions 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164

Table 83. DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
Table 84. DAC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 85. VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Table 86. COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Table 87. OPAMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Table 88. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Table 89. VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Table 90. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Table 91. TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Table 92. IWDG min/max timeout period at 32 kHz (LSI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Table 93. WWDG min/max timeout value at 80 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Table 94. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
Table 95. SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
Table 96. Quad SPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Table 97. QUADSPI characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
Table 98. SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Table 99. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . 190
Table 100. eMMC dynamic characteristics, VDD = 1.71 V to 1.9 V . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 101. USB electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Table 102. LQFP100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Table 103. UFBGA100 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Table 104. UFBGA100 - Recommended PCB design rules (0.5 mm pitch BGA). . . . . . . . . . . . . . . . 197
Table 105. LQFP64 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Table 106. UFBGA64 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Table 107. UFBGA64 - Recommended PCB design rules (0.5 mm pitch BGA). . . . . . . . . . . . . . . . . 203
Table 108. WLCSP64 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Table 109. WLCSP64 - Recommended PCB design rules (0.4 mm pitch). . . . . . . . . . . . . . . . . . . . . 207
Table 110. LQFP48 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 210
Table 111. UFQFPN48 - Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
Table 112. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 215
Table 113. STM32L452xx ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 218
Table 114. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 219

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List of figures

Figure 1. STM32L452xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

Figure 2. Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 3. Power-up/down sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 4. Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Figure 5. Voltage reference buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 6. STM32L452Vx LQFP100 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Figure 7. STM32L452Vx UFBGA100 ballout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 8. STM32L452Rx LQFP64 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 9. STM32L452Rx, external SMPS device, LQFP64 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 10. STM32L452Rx UFBGA64 ballout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 11. STM32L452Rx WLCSP64 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 12. STM32L452Rx, external SMPS device, WLCSP64 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . 60
Figure 13. STM32L452Cx LQFP48 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 14. STM32L452Cx UFQFPN48 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61
Figure 15. STM32L452xx memory map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Figure 16. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 17. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Figure 18. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Figure 19. Current consumption measurement scheme with and without external
SMPS power supply . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Figure 20. VREFINT versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Figure 21. High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Figure 22. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Figure 23. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
Figure 24. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 25. HSI16 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Figure 26. Typical current consumption versus MSI frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Figure 27. HSI48 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141
Figure 28. I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Figure 29. I/O AC characteristics definition(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 30. Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Figure 31. ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Figure 32. Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Figure 33. 12-bit buffered / non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Figure 34. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 35. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 36. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
Figure 37. Quad SPI timing diagram - SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Figure 38. Quad SPI timing diagram - DDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Figure 39. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Figure 40. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
Figure 41. SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Figure 42. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
Figure 43. LQFP100 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Figure 44. LQFP100 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
Figure 45. LQFP100 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195
Figure 46. UFBGA100 -Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Figure 47. UFBGA100 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197

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Figure 48. UFBGA100 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198

Figure 49. LQFP64 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 199
Figure 50. LQFP64 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
Figure 51. LQFP64 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201
Figure 52. UFBGA64 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202
Figure 53. UFBGA64 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203
Figure 54. UFBGA64 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 204
Figure 55. WLCSP64 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 205
Figure 56. WLCSP64 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 206
Figure 57. WLCSP64 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 207
Figure 58. WLCSP64, external SMPS device, marking (package top view) . . . . . . . . . . . . . . . . . . . 208
Figure 59. LQFP48 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209
Figure 60. LQFP48 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
Figure 61. LQFP48 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 211
Figure 62. UFQFPN48 - Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 212
Figure 63. UFQFPN48 - Recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 213
Figure 64. UFQFPN48 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 214
Figure 65. LQFP64 PD max vs. TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 217

DS11912 Rev 7 11/221

11
Introduction STM32L452xx

1 Introduction

This datasheet provides the ordering information and mechanical device characteristics of
the STM32L452xx microcontrollers.
This document should be read in conjunction with the STM32L41x, STM32L42x,
STM32L43x, STM32L44x, STM32L45x, STM32L46x reference manual (RM0394), available
from the STMicroelectronics website www.st.com.
For information on the Arm®(a) Cortex®-M4 core, refer to the Cortex®-M4 Technical
Reference Manual, available from the www.arm.com website.

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

12/221 DS11912 Rev 7

STM32L452xx Description

2 Description

The STM32L452xx devices are ultra-low-power microcontrollers based on the

high-performance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to
80 MHz. The Cortex-M4 core features a Floating point unit (FPU) single precision that
supports all Arm® single-precision data-processing instructions and data types. It also
implements a full set of DSP instructions and a memory protection unit (MPU) which
enhances application security.
The STM32L452xx devices embed high-speed memories (Flash memory up to 512 Kbyte,
160 Kbyte of SRAM), a Quad SPI Flash memories interface (available on all packages) and
an extensive range of enhanced I/Os and peripherals connected to two APB buses, two
AHB buses and a 32-bit multi-AHB bus matrix.
The STM32L452xx devices embed several protection mechanisms for embedded Flash
memory and SRAM: readout protection, write protection, proprietary code readout
protection and Firewall.
The devices offer a fast 12-bit ADC (5 Msps), two comparators, one operational amplifier,
one DAC channel, an internal voltage reference buffer, a low-power RTC, one general-
purpose 32-bit timer, one 16-bit PWM timer dedicated to motor control, four general-purpose
16-bit timers, and two 16-bit low-power timers.
In addition, up to 21 capacitive sensing channels are available.
They also feature standard and advanced communication interfaces, namely four I2Cs,
three SPIs, three USARTs, one UART and one Low-Power UART, one SAI, one SDMMC,
one CAN, one USB full-speed device crystal less.
The STM32L452xx operates in the -40 to +85 °C (+105 °C junction) and -40 to +125 °C
(+130 °C junction) temperature ranges from a 1.71 to 3.6 V VDD power supply when using
internal LDO regulator and a 1.05 to 1.32V VDD12 power supply when using external SMPS
supply. A comprehensive set of power-saving modes makes possible the design of low-
power applications.
Some independent power supplies are supported: analog independent supply input for
ADC, DAC, OPAMP and comparators. A VBAT input makes it possible to backup the RTC
and backup registers. Dedicated VDD12 power supplies can be used to bypass the internal
LDO regulator when connected to an external SMPS.
The STM32L452xx family offers seven packages from 48 to 100-pin packages.

DS11912 Rev 7 13/221

56
Description STM32L452xx

Table 2. STM32L452xx family device features and peripheral counts

Peripheral STM32L452Vx STM32L452Rx STM32L452Cx

Flash memory 256KB 512KB 256KB 512KB 256KB 512KB

SRAM 160KB
Quad SPI Yes
Advanced
1 (16-bit)
control

General 2 (16-bit)
purpose 1 (32-bit)
Basic 2 (16-bit)
Timers Low -power 2 (16-bit)
SysTick timer 1
Watchdog
timers
2
(independent,
window)
SPI 3
I2C 4
USART 3
UART 1
Comm. LPUART 1
interfaces
SAI 1
CAN 1
USB FS Yes
(1)
SDMMC Yes No
RTC Yes
Tamper pins 3 2 2
Random generator Yes
(2)
GPIOs 83 52 38
Wakeup pins 5 4(1) 3
Capacitive sensing
21 12 6
Number of channels

12-bit ADC 1 1 1
Number of channels 16 16(1) 10
12-bit DAC channels 1
Internal voltage reference
Yes No
buffer
Analog comparator 2
Operational amplifiers 1
Max. CPU frequency 80 MHz

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Table 2. STM32L452xx family device features and peripheral counts (continued)

Peripheral STM32L452Vx STM32L452Rx STM32L452Cx

Operating voltage 1.71 to 3.6 V

Ambient operating temperature:
-40 to 85 °C / -40 to 125 °C
Operating temperature
Junction temperature:
-40 to 105 °C / -40 to 130 °C
WLCSP64
LQFP100 LQFP48
Packages LQFP64
UFBGA100 UFQFPN48
UFBGA64
1. WKUP5, ADC1_IN14 and SDMMC interface are not supported by 64-pin packages with SMPS option.
2. In case external SMPS package type is used, 2 GPIO's are replaced by VDD12 pins to connect the SMPS
power supplies hence reducing the number of available GPIO's by 2.

DS11912 Rev 7 15/221

56
Description STM32L452xx

Figure 1. STM32L452xx block diagram

D0[3:0],
NJTRST, JTDI, D1[3:0],
JTCK/SWCLK JTAG & SW Quad SPI memory interface CLK0,
MPU
CLK1
JTDO/SWD, JTDO
ETM NVIC CS
TRACECLK
TRACED[3:0] D-BUS
ARM Cortex-M4
80 MHz
I-BUS
FPU RNG

ACCEL/
CACHE
Flash

ART
S-BUS up to
512 KB

AHB bus-matrix
SRAM2 32 KB

SRAM1 128 KB

VDD Power management

VDD = 1.71 to 3.6 V
AHB2 80 MHz Voltage VDD12 = 1.05 to 1.32 V(1)
DMA2
regulator
VDD12 3.3 to 1.2 V VSS

DMA1
@ VDD @ VDD
Supply
MSI reset
supervision
7 Groups of VDDUSB
Touch sensing controller RC HSI Int
4 channels max as AF BOR
VDDA, VSSA
RC LSI VDD, VSS, NRST
PA[15:0] GPIO PORT A PVD, PVM
PLL 1&2

AHB1 80 MHz
PB[15:0] GPIO PORT B HSI48 @VDD

XTAL OSC OSC_IN

PC[15:0] GPIO PORT C 4- 16MHz OSC_OUT

IWDG
VBAT = 1.55 to 3.6 V
PD[15:0] GPIO PORT D

Standby
PE[15:0] GPIO PORT E interface
Reset & clock
M AN AGT
control @VBAT
PH[1:0], OSC32_IN
PH[3] GPIO PORT H XTAL 32 kHz
OSC32_OUT
RTC
RTC_TS
FCLK

PCLKx

AWU
HCLKx

RTC_TAMPx
Backup register
RTC_OUT

@ VDD

U STemperature
AR T 2 M sensor
Bps TIM2 32b 4 channels, ETR as AF
CRC
@ VDDUSB
DP
@ VDDA
FIFO

PHY DM
USB FS
NOE
16 external analog inputs ADC1 ITF
CRS CRS_SYNC

@ VDDA
smcard
VREF+ USART2 RX, TX, CK, CTS, RTS as AF
VREF Buffer AHB/APB2 AHB/APB1 IrDA

smcard RX, TX, CK, CTS, RTS as AF

USART3
83 AF EXT IT. WKUP IrDA

D[7:0]
FIFO

UART4 RX, TX, CTS, RTS as AF

CMD, CK as AF SDIO / MMC
IrDA
3 compl. channels (TIM1_CH[1:3]N),
4 channels (TIM1_CH[1:4]), SPI2 MOSI, MISO, SCK, NSS as AF
TIM1 / PWM 16b
ETR, BKIN, BKIN2 as AF
SPI3 MOSI, MISO, SCK, NSS as AF
WWDG
I2C1/SMBUS SCL, SDA, SMBA as AF
2 channels, 16b
TIM15
1 compl. channel, BKIN as AF
I2C2/SMBUS SCL, SDA, SMBA as AF
APB2 80MHz

1 channel,
TIM16 16b
1 compl. channel, BKIN as AF
I2C3/SMBUS SCL, SDA, SMBA as AF
1 3 0 M Hz

I2C4/SMBUS SCL, SDA, SMBA as AF

smcard
A P B(max)

RX, TX, CK,CTS, USART1

RTS as AF IrDA TIM6 16b
FIFO

bxCAN1 TX, RX as AF
APB1 80 MHz

MOSI, MISO,
SPI1
SCK, NSS as AF
MCLK_A, SD_A, FS_A, SCK_A, EXTCLK @VDDA
SAI1
MCLK_B, SD_B, FS_B, SCK_B as AF
OpAmp1 VOUT, VINM, VINP
B Hz

SDCKIN[3:0], SDDATIN[3:0],
2

DFSDM
60PM

SDCKOUT, SDTRIG as AF
A

LPUART1 RX, TX, CTS, RTS as AF

@ VDDA @ VDDA

INP, INM, OUT COMP1 IO

SWPMI1
RX, TX, SUSPEND as AF
DAC1 ITF
INP, INM, OUT COMP2
LPTIM1 IN1, IN2, OUT, ETR as AF

FIREWALL
LPTIM2 IN1, OUT, ETR as AF

1. Only available when using external SMPS supply mode. OUT1 MSv40938V2

Note: AF: alternate function on I/O pins.

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STM32L452xx Functional overview

3 Functional overview

3.1 Arm® Cortex®-M4 core with FPU

The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm® processors for
embedded systems, developed to provide a low-cost platform that meets the needs of MCU
implementation with a reduced pin count and low-power consumption, while delivering
outstanding computational performance and an advanced response to interrupts.
The Arm® Cortex®-M4 with FPU 32-bit RISC processor features exceptional code-
efficiency, delivering the high-performance expected from an Arm® core in the memory size
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions enabling efficient signal processing and
complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded Arm® core, the STM32L452xx family is compatible with all Arm® tools
and software.
Figure 1 shows the general block diagram of the STM32L452xx family devices.

3.2 Adaptive real-time memory accelerator (ART Accelerator™)

The ART Accelerator™ is a memory accelerator optimized for STM32 industry-standard
Arm® Cortex®-M4 processors. It balances the inherent performance advantage of the Arm®
Cortex®-M4 over Flash memory technologies, which normally requires the processor to wait
for the Flash memory at higher frequencies.
To release the processor near 100 DMIPS performance at 80 MHz, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 80 MHz.

3.3 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole
4 Gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-
time operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.

DS11912 Rev 7 17/221

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Functional overview STM32L452xx

3.4 Embedded Flash memory

STM32L452xx devices feature up to 512 Kbyte of embedded Flash memory available for
storing programs and data in single bank architecture. The Flash memory contains 256
pages of 2 Kbyte.
Flexible protections can be configured thanks to option bytes:
• Readout protection (RDP) to protect the whole memory. Three levels are available:
– Level 0: no readout protection
– Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
– Level 2: chip readout protection: debug features (Cortex-M4 JTAG and serial
wire), boot in RAM and bootloader selection are disabled (JTAG fuse). This
selection is irreversible.

Table 3. Access status versus readout protection level and execution modes
Debug, boot from RAM or boot
User execution
Protection from system memory (loader)
Area
level
Read Write Erase Read Write Erase

Main 1 Yes Yes Yes No No No

memory 2 Yes Yes Yes N/A N/A N/A

System 1 Yes No No Yes No No

memory 2 Yes No No N/A N/A N/A

Option 1 Yes Yes Yes Yes Yes Yes

bytes 2 Yes No No N/A N/A N/A
(1)
Backup 1 Yes Yes N/A No No N/A(1)
registers 2 Yes Yes N/A N/A N/A N/A
1 Yes Yes Yes(1) No No No(1)
SRAM2
2 Yes Yes Yes N/A N/A N/A
1. Erased when RDP change from Level 1 to Level 0.

• Write protection (WRP): the protected area is protected against erasing and
programming. Two areas can be selected, with 2-Kbyte granularity.
• Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
The PCROP area granularity is 64-bit wide. An additional option bit (PCROP_RDP)
allows the user to select if the PCROP area is erased or not when the RDP protection
is changed from Level 1 to Level 0.
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
• single error detection and correction
• double error detection.

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STM32L452xx Functional overview

The address of the ECC fail can be read in the ECC register.

3.5 Embedded SRAM

STM32L452xx devices feature 160 Kbyte of embedded SRAM, split into two blocks:
• 128 Kbyte mapped at address 0x2000 0000 (SRAM1)
• 32 Kbyte located at address 0x1000 0000 with hardware parity check (SRAM2).
This memory is also mapped at address 0x2002 0000, offering a contiguous address
space with the SRAM1 (32 Kbyte aliased by bit band)
This block is accessed through the ICode/DCode buses for maximum performance.
These 32 Kbyte SRAM can also be retained in Standby mode.
The SRAM2 can be write-protected with 1 Kbyte granularity.
The memory can be accessed in read/write at CPU clock speed with 0 wait states.

3.6 Firewall
The device embeds a Firewall which protects code sensitive and secure data from any
access performed by a code executed outside of the protected areas.
Each illegal access generates a reset which kills immediately the detected intrusion.
The Firewall main features are the following:
• Three segments can be protected and defined thanks to the Firewall registers:
– Code segment (located in Flash or SRAM1 if defined as executable protected
area)
– Non-volatile data segment (located in Flash)
– Volatile data segment (located in SRAM1)
• The start address and the length of each segments are configurable:
– Code segment: up to 1024 Kbyte with granularity of 256 bytes
– Non-volatile data segment: up to 1024 Kbyte with granularity of 256 bytes
– Volatile data segment: up to 128 Kbyte with a granularity of 64 bytes
• Specific mechanism implemented to open the Firewall to get access to the protected
areas (call gate entry sequence)
• Volatile data segment can be shared or not with the non-protected code
• Volatile data segment can be executed or not depending on the Firewall configuration
The Flash readout protection must be set to level 2 in order to reach the expected level of
protection.

3.7 Boot modes

At startup, BOOT0 pin or nSWBOOT0 option bit, and BOOT1 option bit are used to select
one of three boot options:
• Boot from user Flash
• Boot from system memory
• Boot from embedded SRAM

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56
Functional overview STM32L452xx

BOOT0 value may come from the PH3-BOOT0 pin or from an option bit depending on the
value of a user option bit to free the GPIO pad if needed.
A Flash empty check mechanism is implemented to force the boot from system flash if the
first flash memory location is not programmed and if the boot selection is configured to boot
from main flash.
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART, I2C, SPI, CAN or USB FS in Device mode through DFU (device firmware
upgrade).

3.8 Cyclic redundancy check calculation unit (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at link-
time and stored at a given memory location.

3.9 Power supply management

3.9.1 Power supply schemes

• VDD = 1.71 to 3.6 V: external power supply for I/Os (VDDIO1), the internal regulator and
the system analog such as reset, power management and internal clocks. It is provided
externally through VDD pins.
• VDD12 = 1.05 to 1.32 V: external power supply bypassing internal regulator when
connected to an external SMPS. It is provided externally through VDD12 pins and only
available on packages with the external SMPS supply option. VDD12 does not require
any external decoupling capacitance and cannot support any external load.
• VDDA = 1.62 V (ADC/COMPs) / 1.8 (DAC/OPAMP) / 2.4 V (VREFBUF) to 3.6 V:
external analog power supply for ADC, DAC, OPAMP, Comparators and Voltage
reference buffer. The VDDA voltage level is independent from the VDD voltage.
• VDDUSB = 3.0 to 3.6 V: external independent power supply for USB transceivers. The
VDDUSB voltage level is independent from the VDD voltage.
• VBAT = 1.55 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Note: When the functions supplied by VDDA are not used, this supply should preferably be shorted
to VDD.
Note: If these supplies are tied to ground, the I/Os supplied by these power supplies are not 5 V
tolerant.
Note: VDDIOx is the I/Os general purpose digital functions supply. VDDIOx represents VDDIO1, with
VDDIO1 = VDD.

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STM32L452xx Functional overview

Figure 2. Power supply overview

VDDA domain
A/D converters
VDDA Comparators
D/A converters
VSSA Operational amplifiers
Voltage reference buffer

VDDUSB
USB transceivers
VSS

VDD domain
VDDIO1
VDD I/O ring

Reset block
Temp. sensor
PLL, HSI, MSI, HSI48

VSS
Standby circuitry
(Wakeup logic, IWDG)
VCORE domain
VCORE Core
Voltage regulator Memories
Digital peripherals

VDD12

Low voltage detector

Backup domain
LSE crystal 32 K osc
BKP registers
VBAT RCC BDCR register
RTC

MSv45727V1

During power-up and power-down phases, the following power sequence requirements
must be respected:
• When VDD is below 1 V, other power supplies (VDDA) must remain below VDD +
300 mV.
• When VDD is above 1 V, all power supplies are independent.
During the power-down phase, VDD can temporarily become lower than other supplies only
if the energy provided to the MCU remains below 1 mJ; this allows external decoupling
capacitors to be discharged with different time constants during the power-down transient
phase.

DS11912 Rev 7 21/221

56
Functional overview STM32L452xx

Figure 3. Power-up/down sequence

V

3.6
VDDX(1)

VDD

VBOR0

0.3

Power-on Operating mode Power-down time

Invalid supply area VDDX < VDD + 300 mV VDDX independent from VDD
MSv47490V1

1. VDDX refers to VDDA.

3.9.2 Power supply supervisor

The device has an integrated ultra-low-power brown-out reset (BOR) active in all modes
except Shutdown and ensuring proper operation after power-on and during power down.
The device remains in reset mode when the monitored supply voltage VDD is below a
specified threshold, without the need for an external reset circuit.
The lowest BOR level is 1.71V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the VDD power supply and compares it to the VPVD threshold. An
interrupt can be generated when VDD drops below the VPVD threshold and/or when VDD is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
In addition, the device embeds a Peripheral Voltage Monitor which compares the
independent supply voltage VDDA with a fixed threshold in order to ensure that the
peripheral is in its functional supply range.

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STM32L452xx Functional overview

3.9.3 Voltage regulator

Two embedded linear voltage regulators supply most of the digital circuitries: the main
regulator (MR) and the low-power regulator (LPR).
• The MR is used in the Run and Sleep modes and in the Stop 0 mode.
• The LPR is used in Low-Power Run, Low-Power Sleep, Stop 1 and Stop 2 modes. It is
also used to supply the 32 Kbyte SRAM2 in Standby with SRAM2 retention.
• Both regulators are in power-down in Standby and Shutdown modes: the regulator
output is in high impedance, and the kernel circuitry is powered down thus inducing
zero consumption.
The ultralow-power STM32L452xx supports dynamic voltage scaling to optimize its power
consumption in run mode. The voltage from the Main Regulator that supplies the logic
(VCORE) can be adjusted according to the system’s maximum operating frequency.
There are two power consumption ranges:
• Range 1 with the CPU running at up to 80 MHz.
• Range 2 with a maximum CPU frequency of 26 MHz. All peripheral clocks are also
limited to 26 MHz.
The VCORE can be supplied by the low-power regulator, the main regulator being switched
off. The system is then in Low-power run mode.
• Low-power run mode with the CPU running at up to 2 MHz. Peripherals with
independent clock can be clocked by HSI16.
When the MR is in use, the STM32L452xx with the external SMPS option permits to force
an external VCORE supply on the VDD12 supply pins.
When VDD12 is forced by an external source and is higher than the output of the internal
LDO, the current is taken from this external supply and the overall power efficiency is
significantly improved if using an external step down DC/DC converter.

3.9.4 Low-power modes

The ultra-low-power STM32L452xx supports seven low-power modes to achieve the best
compromise between low-power consumption, short startup time, available peripherals and
available wakeup sources.

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56
24/221

Functional overview
Table 4. STM32L452xx modes overview
Mode Regulator(1) CPU Flash SRAM Clocks DMA and Peripherals(2) Wakeup source Consumption(3) Wakeup time

MR range 1 94 µA/MHz
All
SMPS range 2 High 34 µA/MHz(4)
Run Yes ON(6) ON Any N/A N/A
MR range2 85 µA/MHz
All except USB_FS, RNG
SMPS range 2 Low 37 µA/MHz(5)
Any to Range 1: 4 µs
LPRun LPR Yes ON(6) ON except All except USB_FS, RNG N/A 95 µA/MHz
to Range 2: 64 µs
PLL
MR range 1 27 µA/MHz
All
SMPS range 2 High Any interrupt or 10 µA/MHz(4)
Sleep No ON(6) ON(7) Any 6 cycles
MR range2 event 27 µA/MHz
All except USB_FS, RNG
DS11912 Rev 7

SMPS range 2 Low 11 µA/MHz(5)

Any
Any interrupt or
LPSleep LPR No ON(6) ON(7) except All except USB_FS, RNG 38 µA/MHz 6 cycles
event
PLL

BOR, PVD, PVM

RTC, IWDG
Reset pin, all I/Os
MR Range 1(8) COMPx (x=1,2) 125 µA
BOR, PVD, PVM
DAC1
RTC, IWDG
OPAMPx (x=1)
COMPx (x=1..2)
USARTx (x=1...3)(9)
LSE USARTx (x=1...3)(9) 2.47 µs in SRAM
Stop 0 No OFF ON UART4(9)
LSI UART4(9) 4.1 µs in Flash
LPUART1(9)
LPUART1(9)
I2Cx (x=1...4)(10)
I2Cx (x=1...4)(10)
LPTIMx (x=1,2)
MR Range 2(8) LPTIMx (x=1,2)

STM32L452xx
125 µA
***
USB_FS(11)
All other peripherals are
frozen.
 Table 4. STM32L452xx modes overview (continued)

STM32L452xx
(1)
Mode Regulator CPU Flash SRAM Clocks DMA and Peripherals(2) Wakeup source Consumption(3) Wakeup time

BOR, PVD, PVM

RTC, IWDG
Reset pin, all I/Os
COMPx (x=1,2)
BOR, PVD, PVM
DAC1
RTC, IWDG
OPAMPx (x=1)
COMPx (x=1..2)
USARTx (x=1...3)(9)
LSE USARTx (x=1...3)(9) 9.85 µA w/o RTC 5.7 µs in SRAM
Stop 1 LPR No Off ON UART4(9)
LSI UART4(9) 10.5 µA w RTC 7 µs in Flash
LPUART1(9)
LPUART1(9)
I2Cx (x=1...4)(10)
I2Cx (x=1...4)(10)
LPTIMx (x=1,2)
LPTIMx (x=1,2)
***
USB_FS(11)
All other peripherals are
frozen.
DS11912 Rev 7

BOR, PVD, PVM

RTC, IWDG Reset pin, all I/Os
COMPx (x=1..2) BOR, PVD, PVM
I2C3(10) RTC, IWDG
LSE 2.05 µA w/o RTC 5.8 µs in SRAM
Stop 2 LPR No Off ON LPUART1(9) COMPx (x=1..2)
LSI 2.30 µA w/RTC 8.3 µs in Flash
LPTIM1 I2C3(10)
*** LPUART1(9)
All other peripherals are LPTIM1
frozen.

Functional overview
25/221
 Table 4. STM32L452xx modes overview (continued)
26/221

Functional overview
(1)
Mode Regulator CPU Flash SRAM Clocks DMA and Peripherals(2) Wakeup source Consumption(3) Wakeup time

SRAM BOR, RTC, IWDG 0.35 µA w/o RTC

LPR
2 ON *** 0.52 µA w/ RTC
All other peripherals are Reset pin
Power LSE
Standby Off Power powered off. 5 I/Os (WKUPx)(12) 16.1 µs
ed Off LSI 0.10 µA w/o RTC
OFF ed *** BOR, RTC, IWDG
I/O configuration can be 0.27 µA w/ RTC
Off
floating, pull-up or pull-down
RTC
***
Power All other peripherals are Reset pin
Power powered off. 0.02 µA w/o RTC
Shutdown OFF Off ed LSE 5 I/Os (WKUPx)(12) 256 µs
ed Off *** 0.17 µA w/ RTC
Off RTC
I/O configuration can be
DS11912 Rev 7

floating, pull-up or pull-

down(13)
1. LPR means Main regulator is OFF and Low-power regulator is ON.
2. All peripherals can be active or clock gated to save power consumption.
3. Typical current at VDD = 1.8 V, 25°C. Consumptions values provided running from SRAM, Flash memory Off, 80 MHz in Range 1, 26 MHz in Range 2, 2 MHz in
LPRun/LPSleep.
4. Theoretical value based on VDD = 3.3 V, DC/DC Efficiency of 85%, VCORE = 1.10 V
5. Theoretical value based on VDD = 3.3 V, DC/DC Efficiency of 85%, VCORE = 1.05 V
6. The Flash memory can be put in power-down and its clock can be gated off when executing from SRAM.
7. The SRAM1 and SRAM2 clocks can be gated on or off independently.
8. SMPS mode can be used in STOP0 Mode, but no significant power gain can be expected.
9. U(S)ART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or received frame event.
10. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
11. USB_FS wakeup by resume from suspend and attach detection protocol event.
12. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.

STM32L452xx
13. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when exiting the Shutdown mode.
STM32L452xx Functional overview

By default, the microcontroller is in Run mode after a system or a power Reset. It is up to the
user to select one of the low-power modes described below:
• Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
• Low-power run mode
This mode is achieved with VCORE supplied by the low-power regulator to minimize the
regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
• Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the low-
power run mode.
• Stop 0, Stop 1 and Stop 2 modes
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the VCORE domain are stopped, the PLL, the MSI
RC, the HSI16 RC and the HSE crystal oscillators are disabled. The LSE or LSI is still
running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode
to detect their wakeup condition.
Three Stop modes are available: Stop 0, Stop 1 and Stop 2 modes. In Stop 2 mode,
most of the VCORE domain is put in a lower leakage mode.
Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller
wakeup time but a higher consumption than Stop 2. In Stop 0 mode, the main regulator
remains ON, allowing a very fast wakeup time but with much higher consumption.
The system clock when exiting from Stop 0, Stop 1 or Stop 2 modes can be either MSI
up to 48 MHz or HSI16, depending on software configuration.
• Standby mode
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the VCORE domain is powered off. The PLL, the
MSI RC, the HSI16 RC and the HSE crystal oscillators are also switched off.
The RTC can remain active (Standby mode with RTC, Standby mode without RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAM1 and register contents are lost except for registers
in the Backup domain and Standby circuitry. Optionally, SRAM2 can be retained in
Standby mode, supplied by the low-power Regulator (Standby with SRAM2 retention
mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE).
The system clock after wakeup is MSI up to 8 MHz.

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Functional overview STM32L452xx

• Shutdown mode
The Shutdown mode permits to achieve the lowest power consumption. The internal
regulator is switched off so that the VCORE domain is powered off. The PLL, the HSI16,
the MSI, the LSI and the HSE oscillators are also switched off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to Backup domain is not supported.
SRAM1, SRAM2 and register contents are lost except for registers in the Backup
domain.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wakeup, timestamp, tamper).
The system clock after wakeup is MSI at 4 MHz.

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STM32L452xx Functional overview

Table 5. Functionalities depending on the working mode(1)

Stop 0/1 Stop 2 Standby Shutdown

Wakeup capability

Wakeup capability

Wakeup capability

Wakeup capability
Low- Low-
Peripheral Run Sleep power power VBAT
run sleep - - - -

CPU Y - Y - - - - - - - - - -
Flash memory (up to
O(2) O(2) O(2) O(2) - - - - - - - - -
512 KB)
SRAM1 (128 KB) Y Y(3) Y Y(3) Y - Y - - - - - -
SRAM2 (32 KB) Y Y(3) Y Y(3) Y - Y - O(4) - - - -
Quad SPI O O O O - - - - - - - - -
Backup registers Y Y Y Y Y - Y - Y - Y - Y
Brown-out reset
Y Y Y Y Y Y Y Y Y Y - - -
(BOR)
Programmable
voltage detector O O O O O O O O - - - - -
(PVD)
Peripheral voltage
monitor (PVMx; O O O O O O O O - - - - -
x=1,3,4)
DMA O O O O - - - - - - - - -
High speed Internal (5) (5)
O O O O - - - - - - -
(HSI16)
Oscillator RC48 O O - - - - - - - - - - -
High speed external
O O O O - - - - - - - - -
(HSE)
Low speed internal
O O O O O - O - O - - - -
(LSI)
Low speed external
O O O O O - O - O - O - O
(LSE)
Multi-Speed internal
O O O O - - - - - - - - -
(MSI)
Clock security
O O O O - - - - - - - - -
system (CSS)
Clock security
O O O O O O O O O O - - -
system on LSE
RTC / Auto wakeup O O O O O O O O O O O O O
Number of RTC
3 3 3 3 3 O 3 O 3 O 3 O 3
Tamper pins

DS11912 Rev 7 29/221

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Functional overview STM32L452xx

Table 5. Functionalities depending on the working mode(1) (continued)

Stop 0/1 Stop 2 Standby Shutdown

Wakeup capability

Wakeup capability

Wakeup capability

Wakeup capability
Low- Low-
Peripheral Run Sleep power power VBAT
run sleep - - - -

USARTx (x=1,2,3)
O O O O O(6) O(6) - - - - - - -
UART4
Low-power UART
O O O O O(6) O(6) O(6) O(6) - - - - -
(LPUART)
I2Cx (x=1,2,4) O O O O O(7) O(7) - - - - - - -
(7)
I2C3 O O O O O O(7) O(7) O(7) - - - - -
SPIx (x=1,2,3) O O O O - - - - - - - - -
CAN O O O O - - - - - - - - -
SDMMC1 O O O O - - - - - - - - -
SAIx (x=1) O O O O - - - - - - - - -
DFSDM1 O O O O - - - - - - - - -
ADCx (x=1) O O O O - - - - - - - - -
DAC1 O O O O O - - - - - - - -
VREFBUF O O O O O - - - - - - - -
OPAMPx (x=1) O O O O O - - - - - - - -
COMPx (x=1,2) O O O O O O O O - - - - -
Temperature sensor O O O O - - - - - - - - -
Timers (TIMx) O O O O - - - - - - - - -
Low-power timer 1
O O O O O O O O - - - - -
(LPTIM1)
Low-power timer 2
O O O O O O - - - - - - -
(LPTIM2)
Independent
O O O O O O O O O O - - -
watchdog (IWDG)
Window watchdog
O O O O - - - - - - - - -
(WWDG)
SysTick timer O O O O - - - - - - - - -
Touch sensing
O O O O - - - - - - - - -
controller (TSC)
Random number
O(8) O(8) - - - - - - - - - - -
generator (RNG)

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STM32L452xx Functional overview

Table 5. Functionalities depending on the working mode(1) (continued)

Stop 0/1 Stop 2 Standby Shutdown

Wakeup capability

Wakeup capability

Wakeup capability

Wakeup capability
Low- Low-
Peripheral Run Sleep power power VBAT
run sleep - - - -

CRC calculation unit O O O O - - - - - - - - -

5 5
(9) (11)
GPIOs O O O O O O O O pins pins -
(10) (10)

1. Legend: Y = Yes (Enable). O = Optional (Disable by default. Can be enabled by software). - = Not available.
2. The Flash can be configured in power-down mode. By default, it is not in power-down mode.
3. The SRAM clock can be gated on or off.
4. SRAM2 content is preserved when the bit RRS is set in PWR_CR3 register.
5. Some peripherals with wakeup from Stop capability can request HSI16 to be enabled. In this case, HSI16 is woken up by
the peripheral, and only feeds the peripheral which requested it. HSI16 is automatically put off when the peripheral does not
need it anymore.
6. UART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or
received frame event.
7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
8. Voltage scaling Range 1 only.
9. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.
10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when
exiting the Shutdown mode.

3.9.5 Reset mode

In order to improve the consumption under reset, the I/Os state under and after reset is
“analog state” (the I/O schmitt trigger is disable). In addition, the internal reset pull-up is
deactivated when the reset source is internal.

3.9.6 VBAT operation

The VBAT pin permits to power the device VBAT domain from an external battery, an
external supercapacitor, or from VDD when no external battery and an external
supercapacitor are present. The VBAT pin supplies the RTC with LSE and the backup
registers. Three anti-tamper detection pins are available in VBAT mode.
VBAT operation is automatically activated when VDD is not present.
An internal VBAT battery charging circuit is embedded and can be activated when VDD is
present.
Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.

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Functional overview STM32L452xx

3.10 Interconnect matrix

Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep, low-power run
and sleep, Stop 0, Stop 1 and Stop 2 modes.

Table 6. STM32L452xx peripherals interconnect matrix

Low-power sleep
Low-power run

Stop 0 / Stop 1
Stop 2
Sleep
Interconnect

Run
Interconnect source Interconnect action
destination

TIMx Timers synchronization or chaining Y Y Y Y - -

ADCx
DAC1 Conversion triggers Y Y Y Y - -
TIMx
DFSDM1
DMA Memory to memory transfer trigger Y Y Y Y - -
COMPx Comparator output blanking Y Y Y Y - -
TIM15/TIM16 IRTIM Infrared interface output generation Y Y Y Y - -
TIM1 Timer input channel, trigger, break from
Y Y Y Y - -
TIM2 analog signals comparison
COMPx
Low-power timer triggered by analog Y
LPTIMERx Y Y Y Y Y (1)
signals comparison
ADCx TIM1 Timer triggered by analog watchdog Y Y Y Y - -
TIM16 Timer input channel from RTC events Y Y Y Y - -
RTC Low-power timer triggered by RTC alarms Y
LPTIMERx Y Y Y Y Y (1)
or tampers

All clocks sources (internal TIM2 Clock source used as input channel for
Y Y Y Y - -
and external) TIM15, 16 RC measurement and trimming

CSS
CPU (hard fault)
RAM (parity error)
Flash memory (ECC error)
TIM1
COMPx Timer break Y Y Y Y - -
TIM15,16
PVD
DFSDM1 (analog
watchdog, short circuit
detection)

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Table 6. STM32L452xx peripherals interconnect matrix (continued)

Low-power sleep
Low-power run

Stop 0 / Stop 1
Stop 2
Sleep
Interconnect

Run
Interconnect source Interconnect action
destination

TIMx External trigger Y Y Y Y - -

Y
LPTIMERx External trigger Y Y Y Y Y (1)
GPIO
ADCx
DAC1 Conversion external trigger Y Y Y Y - -
DFSDM1
1. LPTIM1 only.

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Functional overview STM32L452xx

3.11 Clocks and startup

The clock controller (see Figure 4) distributes the clocks coming from different oscillators to
the core and the peripherals. It also manages clock gating for low-power modes and
ensures clock robustness. It features:
• Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
• Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
• Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
• System clock source: four different clock sources can be used to drive the master
clock SYSCLK:
– 4-48 MHz high-speed external crystal or ceramic resonator (HSE), that can supply
a PLL. The HSE can also be configured in bypass mode for an external clock.
– 16 MHz high-speed internal RC oscillator (HSI16), trimmable by software, that can
supply a PLL
– Multispeed internal RC oscillator (MSI), trimmable by software, able to generate
12 frequencies from 100 kHz to 48 MHz. When a 32.768 kHz clock source is
available in the system (LSE), the MSI frequency can be automatically trimmed by
hardware to reach better than ±0.25% accuracy. The MSI can supply a PLL.
– System PLL which can be fed by HSE, HSI16 or MSI, with a maximum frequency
at 80 MHz.
• RC48 with clock recovery system (HSI48): internal RC48 MHz clock source can be
used to drive the SDMMC or the RNG peripherals. This clock can be output on the
MCO.
• Auxiliary clock source: two ultralow-power clock sources that can be used to drive
the real-time clock:
– 32.768 kHz low-speed external crystal (LSE), supporting four drive capability
modes. The LSE can also be configured in bypass mode for an external clock.
– 32 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.
The LSI clock accuracy is ±5% accuracy.
• Peripheral clock sources: Several peripherals (SDMMC, RNG, SAI, USARTs, I2Cs,
LPTimers, ADC) have their own independent clock whatever the system clock. Two
PLLs, each having three independent outputs allowing the highest flexibility, can
generate independent clocks for the ADC, the SDMMC/RNG and the SAI.
• Startup clock: after reset, the microcontroller restarts by default with an internal 4 MHz
clock (MSI). The prescaler ratio and clock source can be changed by the application
program as soon as the code execution starts.
• Clock security system (CSS): this feature can be enabled by software. If a HSE clock
failure occurs, the master clock is automatically switched to HSI16 and a software

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STM32L452xx Functional overview

interrupt is generated if enabled. LSE failure can also be detected and generated an
interrupt.
• Clock-out capability:
– MCO: microcontroller clock output: it outputs one of the internal clocks for
external use by the application. Low frequency clocks (LSI, LSE) are available
down to Stop 1 low power state.
– LSCO: low speed clock output: it outputs LSI or LSE in all low-power modes
down to Standby mode. LSE can also be output on LSCO in Shutdown mode.
LSCO is not available in VBAT mode.
Several prescalers permit to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the APB
domains is 80 MHz.

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Functional overview STM32L452xx

Figure 4. Clock tree

to IWDG
LSI RC 32 kHz

LSCO

to RTC
OSC32_OUT
LSE OSC
/32
32.768 kHz
OSC32_IN
LSE
LSI
HSE
SYSCLK to PWR
MCO
/ 1→16
MSI
HSI16 to AHB bus, core, memory and DMA
Clock
HSI48 source
PLLCLK control AHB PRESC HCLK FCLK Cortex free running clock
OSC_OUT HSE OSC / 1,2,..512
4-48 MHz to Cortex system timer
HSE
/8
OSC_IN Clock MSI
detector SYSCLK PCLK1
HSI16 APB1 PRESC
/ 1,2,4,8,16 to APB1 peripherals

HSI RC x1 or x2
to TIMx
16 MHz x=2,6,7
LSE
HSI16 to USARTx
SYSCLK
x=2..3
to UART4
to LPUART1

MSI RC HSI16
SYSCLK to I2Cx
100 kHz – 48 MHz x=1,2,3,4

LSI
LSE to LPTIMx
HSI16 x=1,2

MSI PCLK2
HSI16
PLL /M HSE APB2 PRESC
PLLSAI1CLK to APB2 peripherals
/P / 1,2,4,8,16

/Q PLL48M1CLK x1 or x2
to TIMx
/R PLLCLK
x=1,15,16

LSE
PLLSAI1 HSI16 to USART1
PLLSAI2CLK SYSCLK
/P
/Q PLL48M2CLK

/R PLLADC1CLK
SYSCLK to DFSDM1

SYSCLK to ADC
HSI RC
48 MHz
HSI16 MSI
CRS
48 MHz clock to USB, RNG, SDMMC

HSI16

to SAI1
SAI1_EXTCLK
MSv40980V2

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STM32L452xx Functional overview

3.12 General-purpose inputs/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. Fast I/O toggling can be
achieved thanks to their mapping on the AHB2 bus.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.

3.13 Direct memory access controller (DMA)

The device embeds 2 DMAs. Refer to Table 7: DMA implementation for the features
implementation.
Direct memory access (DMA) is used in order to provide high-speed data transfer between
peripherals and memory as well as memory to memory. Data can be quickly moved by DMA
without any CPU actions. This keeps CPU resources free for other operations.
The two DMA controllers have 14 channels in total, each dedicated to managing memory
access requests from one or more peripherals. Each has an arbiter for handling the priority
between DMA requests.
The DMA supports:
• 14 independently configurable channels (requests)
• Each channel is connected to dedicated hardware DMA requests, software trigger is
also supported on each channel. This configuration is done by software.
• Priorities between requests from channels of one DMA are software programmable (4
levels consisting of very high, high, medium, low) or hardware in case of equality
(example: request 1 has priority over request 2)
• Independent source and destination transfer size (byte, half word, word), emulating
packing and unpacking. Source/destination addresses must be aligned on the data
size.
• Support for circular buffer management
• 3 event flags (DMA Half Transfer, DMA Transfer complete and DMA Transfer Error)
logically ORed together in a single interrupt request for each channel
• Memory-to-memory transfer
• Peripheral-to-memory and memory-to-peripheral, and peripheral-to-peripheral
transfers
• Access to Flash, SRAM, APB and AHB peripherals as source and destination
• Programmable number of data to be transferred: up to 65536.

Table 7. DMA implementation

DMA features DMA1 DMA2
Number of regular channels 7 7

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Functional overview STM32L452xx

3.14 Interrupts and events

3.14.1 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 67 maskable interrupt channels plus the 16 interrupt lines of the Cortex®-
M4.
The NVIC benefits are the following:
• Closely coupled NVIC gives low latency interrupt processing
• Interrupt entry vector table address passed directly to the core
• Allows early processing of interrupts
• Processing of late arriving higher priority interrupts
• Support for tail chaining
• Processor state automatically saved on interrupt entry, and restored on interrupt exit,
with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.

3.14.2 Extended interrupt/event controller (EXTI)

The extended interrupt/event controller consists of 37 edge detector lines used to generate
interrupt/event requests and wake-up the system from Stop mode. Each external line can be
independently configured to select the trigger event (rising edge, falling edge, both) and can
be masked independently. A pending register maintains the status of the interrupt requests.
The internal lines are connected to peripherals with wakeup from Stop mode capability. The
EXTI can detect an external line with a pulse width shorter than the internal clock period. Up
to 83 GPIOs can be connected to the 16 external interrupt lines.

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3.15 Analog to digital converter (ADC)

The device embeds a successive approximation analog-to-digital converter with the
following features:
• 12-bit native resolution, with built-in calibration
• 5.33 Msps maximum conversion rate with full resolution
– Down to 18.75 ns sampling time
– Increased conversion rate for lower resolution (up to 8.88 Msps for 6-bit
resolution)
• Up to 16 external channels.
• 4 internal channels: internal reference voltage, temperature sensor, VBAT/3 and
DAC1_OUT1.
• One external reference pin is available on some package, allowing the input voltage
range to be independent from the power supply
• Single-ended and differential mode inputs
• Low-power design
– Capable of low-current operation at low conversion rate (consumption decreases
linearly with speed)
– Dual clock domain architecture: ADC speed independent from CPU frequency
• Highly versatile digital interface
– Single-shot or continuous/discontinuous sequencer-based scan mode: 2 groups
of analog signals conversions can be programmed to differentiate background and
high-priority real-time conversions
– ADC supports multiple trigger inputs for synchronization with on-chip timers and
external signals
– Results stored into data register or in RAM with DMA controller support
– Data pre-processing: left/right alignment and per channel offset compensation
– Built-in oversampling unit for enhanced SNR
– Channel-wise programmable sampling time
– Three analog watchdog for automatic voltage monitoring, generating interrupts
and trigger for selected timers
– Hardware assistant to prepare the context of the injected channels to allow fast
context switching

3.15.1 Temperature sensor

The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to the ADC1_IN17 input channel which is
used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.

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Functional overview STM32L452xx

Table 8. Temperature sensor calibration values

Calibration value name Description Memory address

TS ADC raw data acquired at a

TS_CAL1 temperature of 30 °C (± 5 °C), 0x1FFF 75A8 - 0x1FFF 75A9
VDDA = VREF+ = 3.0 V (± 10 mV)
TS ADC raw data acquired at a
TS_CAL2 temperature of 130 °C (± 5 °C), 0x1FFF 75CA - 0x1FFF 75CB
VDDA = VREF+ = 3.0 V (± 10 mV)

3.15.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for
the ADC and Comparators. VREFINT is internally connected to the ADC1_IN0 input
channel. The precise voltage of VREFINT is individually measured for each part by ST
during production test and stored in the system memory area. It is accessible in read-only
mode.

Table 9. Internal voltage reference calibration values

Calibration value name Description Memory address

Raw data acquired at a

VREFINT temperature of 30 °C (± 5 °C), 0x1FFF 75AA - 0x1FFF 75AB
VDDA = VREF+ = 3.0 V (± 10 mV)

3.15.3 VBAT battery voltage monitoring

This embedded hardware feature allows the application to measure the VBAT battery voltage
using the internal ADC channel ADC1_IN18 or ADC3_IN18. As the VBAT voltage may be
higher than VDDA, and thus outside the ADC input range, the VBAT pin is internally
connected to a bridge divider by 3. As a consequence, the converted digital value is one
third the VBAT voltage.

3.16 Digital to analog converter (DAC)

One 12-bit buffered DAC channel can be used to convert digital signals into analog voltage
signal outputs. The chosen design structure is composed of integrated resistor strings and
an amplifier in inverting configuration.

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This digital interface supports the following features:

• Up to two DAC output channels
• 8-bit or 12-bit output mode
• Buffer offset calibration (factory and user trimming)
• Left or right data alignment in 12-bit mode
• Synchronized update capability
• Noise-wave generation
• Triangular-wave generation
• Dual DAC channel independent or simultaneous conversions
• DMA capability for each channel
• External triggers for conversion
• Sample and hold low-power mode, with internal or external capacitor
The DAC channels are triggered through the timer update outputs that are also connected
to different DMA channels.

3.17 Voltage reference buffer (VREFBUF)

The STM32L452xx devices embed an voltage reference buffer which can be used as
voltage reference for ADCs, DAC and also as voltage reference for external components
through the VREF+ pin.
The internal voltage reference buffer supports two voltages:
• 2.048 V
• 2.5 V
An external voltage reference can be provided through the VREF+ pin when the internal
voltage reference buffer is off.
The VREF+ pin is double-bonded with VDDA on some packages. In these packages the
internal voltage reference buffer is not available.

Figure 5. Voltage reference buffer

VREFBUF
VDDA DAC, ADC

Bandgap + VREF+

Low frequency
100 nF
cut-off capacitor

MSv40197V1

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Functional overview STM32L452xx

3.18 Comparators (COMP)

The STM32L452xx devices embed two rail-to-rail comparators with programmable
reference voltage (internal or external), hysteresis and speed (low speed for low-power) and
with selectable output polarity.
The reference voltage can be one of the following:
• External I/O
• DAC output channels
• Internal reference voltage or submultiple (1/4, 1/2, 3/4).
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers
and can be also combined into a window comparator.

3.19 Operational amplifier (OPAMP)

The STM32L452xx embeds one operational amplifier with external or internal follower
routing and PGA capability.
The operational amplifier features:
• Low input bias current
• Low offset voltage
• Low-power mode
• Rail-to-rail input

3.20 Touch sensing controller (TSC)

The touch sensing controller provides a simple solution for adding capacitive sensing
functionality to any application. Capacitive sensing technology is able to detect finger
presence near an electrode which is protected from direct touch by a dielectric (such as
glass or plastic). The capacitive variation introduced by the finger (or any conductive object)
is measured using a proven implementation based on a surface charge transfer acquisition
principle.
The touch sensing controller is fully supported by the STMTouch touch sensing firmware
library which is free to use and allows touch sensing functionality to be implemented reliably
in the end application.

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The main features of the touch sensing controller are the following:
• Proven and robust surface charge transfer acquisition principle
• Supports up to 21 capacitive sensing channels
• Up to 3 capacitive sensing channels can be acquired in parallel offering a very good
response time
• Spread spectrum feature to improve system robustness in noisy environments
• Full hardware management of the charge transfer acquisition sequence
• Programmable charge transfer frequency
• Programmable sampling capacitor I/O pin
• Programmable channel I/O pin
• Programmable max count value to avoid long acquisition when a channel is faulty
• Dedicated end of acquisition and max count error flags with interrupt capability
• One sampling capacitor for up to 3 capacitive sensing channels to reduce the system
components
• Compatible with proximity, touchkey, linear and rotary touch sensor implementation
• Designed to operate with STMTouch touch sensing firmware library
Note: The number of capacitive sensing channels is dependent on the size of the packages and
subject to I/O availability.

3.21 Digital filter for Sigma-Delta modulators (DFSDM)

The device embeds one DFSDM with 2 digital filters modules and 4 external input serial
channels (transceivers) or alternately 4 internal parallel inputs support.
The DFSDM peripheral is dedicated to interface the external Σ∆ modulators to
microcontroller and then to perform digital filtering of the received data streams (which
represent analog value on Σ∆ modulators inputs). DFSDM can also interface PDM (Pulse
Density Modulation) microphones and perform PDM to PCM conversion and filtering in

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hardware. DFSDM features optional parallel data stream inputs from microcontrollers
memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆
modulators). DFSDM digital filter modules perform digital processing according user
selected filter parameters with up to 24-bit final ADC resolution.
The DFSDM peripheral supports:
• 4 multiplexed input digital serial channels:
– configurable SPI interface to connect various SD modulator(s)
– configurable Manchester coded 1 wire interface support
– PDM (Pulse Density Modulation) microphone input support
– maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
– clock output for SD modulator(s): 0..20 MHz
• alternative inputs from 8 internal digital parallel channels (up to 16 bit input resolution):
– internal sources: device memory data streams (DMA)
• 2 digital filter modules with adjustable digital signal processing:
– Sincx filter: filter order/type (1..5), oversampling ratio (up to 1..1024)
– integrator: oversampling ratio (1..256)
• up to 24-bit output data resolution, signed output data format
• automatic data offset correction (offset stored in register by user)
• continuous or single conversion
• start-of-conversion triggered by:
– software trigger
– internal timers
– external events
– start-of-conversion synchronously with first digital filter module (DFSDM1_FLT0)
• analog watchdog feature:
– low value and high value data threshold registers
– dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)
– input from final output data or from selected input digital serial channels
– continuous monitoring independently from standard conversion
• short circuit detector to detect saturated analog input values (bottom and top range):
– up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream
– monitoring continuously each input serial channel
• break signal generation on analog watchdog event or on short circuit detector event
• extremes detector:
– storage of minimum and maximum values of final conversion data
– refreshed by software
• DMA capability to read the final conversion data
• interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial
channel clock absence
• “regular” or “injected” conversions:
– “regular” conversions can be requested at any time or even in continuous mode

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without having any impact on the timing of “injected” conversions

– “injected” conversions for precise timing and with high conversion priority

Table 10. DFSDM1 implementation

DFSDM features DFSDM1

Number of channels 8
Number of filters 4
Input from internal ADC -
Supported trigger sources 10
Pulses skipper -
ID registers support -

3.22 Random number generator (RNG)

All devices embed an RNG that delivers 32-bit random numbers generated by an integrated
analog circuit.

3.23 Timers and watchdogs

The STM32L452xx includes one advanced control timers, up to five general-purpose timers,
two basic timers, two low-power timers, two watchdog timers and a SysTick timer. The table
below compares the features of the advanced control, general purpose and basic timers.

Table 11. Timer feature comparison

DMA Capture/
Counter Counter Prescaler Complementary
Timer type Timer request compare
resolution type factor outputs
generation channels

Any integer
Advanced Up, down,
TIM1 16-bit between 1 Yes 4 3
control Up/down
and 65536
Any integer
General- Up, down,
TIM2 32-bit between 1 Yes 4 No
purpose Up/down
and 65536
Any integer
General- Up, down,
TIM3 16-bit between 1 Yes 4 No
purpose Up/down
and 65536
Any integer
General-
TIM15 16-bit Up between 1 Yes 2 1
purpose
and 65536
Any integer
General-
TIM16 16-bit Up between 1 Yes 1 1
purpose
and 65536
Any integer
Basic TIM6 16-bit Up between 1 Yes 0 No
and 65536

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3.23.1 Advanced-control timer (TIM1)

The advanced-control timer can each be seen as a three-phase PWM multiplexed on 6
channels. They have complementary PWM outputs with programmable inserted dead-
times. They can also be seen as complete general-purpose timers. The 4 independent
channels can be used for:
• Input capture
• Output compare
• PWM generation (edge or center-aligned modes) with full modulation capability (0-
100%)
• One-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.23.2) using the same architecture, so the advanced-control timer can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.

3.23.2 General-purpose timers (TIM2, TIM3, TIM15, TIM16)

There are up to three synchronizable general-purpose timers embedded in the
STM32L452xx (see Table 11 for differences). Each general-purpose timer can be used to
generate PWM outputs, or act as a simple time base.
• TIM2, TIM3
They are full-featured general-purpose timers:
– TIM2 has a 32-bit auto-reload up/downcounter and 32-bit prescaler.
– TIM3 has 16-bit auto-reload up/downcounter and 16-bit prescaler.
These timers feature 4 independent channels for input capture/output compare, PWM
or one-pulse mode output. They can work with the other general-purpose timers via the
Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoder.
• TIM15 and 16
They are general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
– TIM15 has 2 channels and 1 complementary channel
– TIM16 has 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.

3.23.3 Basic timer (TIM6)

The basic timer is mainly used for DAC trigger generation. It can also be used as generic
16-bit timebase.

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3.23.4 Low-power timer (LPTIM1 and LPTIM2)

The devices embed two low-power timers. These timers have an independent clock and are
running in Stop mode if they are clocked by LSE, LSI or an external clock. They are able to
wakeup the system from Stop mode.
LPTIM1 is active in Stop 0, Stop 1 and Stop 2 modes.
LPTIM2 is active in Stop 0 and Stop 1 mode.
This low-power timer supports the following features:
• 16-bit up counter with 16-bit autoreload register
• 16-bit compare register
• Configurable output: pulse, PWM
• Continuous/ one shot mode
• Selectable software/hardware input trigger
• Selectable clock source
– Internal clock sources: LSE, LSI, HSI16 or APB clock
– External clock source over LPTIM input (working even with no internal clock
source running, used by pulse counter application).
• Programmable digital glitch filter
• Encoder mode (LPTIM1 only)

3.23.5 Infrared interface (IRTIM)

The STM32L452xx includes one infrared interface (IRTIM), which can be used with an
infrared LED to perform remote control functions. It uses TIM15 and TIM16 output channels
to generate output signal waveforms on IR_OUT pin.

3.23.6 Independent watchdog (IWDG)

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC (LSI) and as it operates independently
from the main clock, it can operate in Stop and Standby modes. It can be used either as a
watchdog to reset the device when a problem occurs, or as a free running timer for
application timeout management. It is hardware or software configurable through the option
bytes. The counter can be frozen in debug mode.

3.23.7 System window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.

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3.23.8 SysTick timer

This timer is dedicated to real-time operating systems, but can also be used as a standard
down counter. It features:
• A 24-bit down counter
• Autoreload capability
• Maskable system interrupt generation when the counter reaches 0
• Programmable clock source

3.24 Real-time clock (RTC) and backup registers

The RTC is an independent BCD timer/counter. It supports the following features:
• Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
• Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
• Two programmable alarms.
• On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
• Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
• Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy.
• Three anti-tamper detection pins with programmable filter.
• Timestamp feature, which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode.
• 17-bit auto-reload wakeup timer (WUT) for periodic events with programmable
resolution and period.
The RTC and the 32 backup registers are supplied through a switch that takes power either
from the VDD supply when present or from the VBAT pin.
The backup registers are 32-bit registers used to store 128 bytes of user application data
when VDD power is not present. They are not reset by a system or power reset, or when the
device wakes up from Standby or Shutdown mode.
The RTC clock sources can be:
• A 32.768 kHz external crystal (LSE)
• An external resonator or oscillator (LSE)
• The internal low power RC oscillator (LSI, with typical frequency of 32 kHz)
• The high-speed external clock (HSE) divided by 32.
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in
all low-power modes except Shutdown mode.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wakeup the device from the low-power modes.

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3.25 Inter-integrated circuit interface (I2C)

The device embeds four I2C. Refer to Table 12 for the features implementation.
The I2C bus interface handles communications between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
• I2C-bus specification and user manual rev. 5 compatibility:
– Slave and master modes, multimaster capability
– Standard-mode (Sm), with a bitrate up to 100 kbit/s
– Fast-mode (Fm), with a bitrate up to 400 kbit/s
– Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os
– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
– Programmable setup and hold times
– Optional clock stretching
• System Management Bus (SMBus) specification rev 2.0 compatibility:
– Hardware PEC (Packet Error Checking) generation and verification with ACK
control
– Address resolution protocol (ARP) support
– SMBus alert
• Power System Management Protocol (PMBusTM) specification rev 1.1 compatibility
• Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent from the PCLK reprogramming. Refer to
Figure 4: Clock tree.
• Wakeup from Stop mode on address match
• Programmable analog and digital noise filters
• 1-byte buffer with DMA capability

Table 12. I2C implementation

I2C features(1) I2C1 I2C2 I2C3 I2C4

Standard-mode (up to 100 kbit/s) X X X X

Fast-mode (up to 400 kbit/s) X X X X
Fast-mode Plus with 20mA output drive I/Os (up to 1 Mbit/s) X X X X
Programmable analog and digital noise filters X X X X
SMBus/PMBus hardware support X X X X
Independent clock X X X X
Wakeup from Stop 1 mode on address match X X X X
Wakeup from Stop 2 mode on address match - - X -
1. X: supported

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3.26 Universal synchronous/asynchronous receiver transmitter

(USART)
The STM32L452xx devices have three embedded universal synchronous receiver
transmitters (USART1, USART2 and USART3) and one universal asynchronous receiver
transmitters (UART4).
These interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. They provide hardware management of the CTS and RTS
signals, and RS485 Driver Enable, and are able to communicate at speeds of up to
10 Mbit/s.
USART1, USART2 and USART3 also provide Smart Card mode (ISO 7816 compliant) and
SPI-like communication capability.
All USART have a clock domain independent from the CPU clock, allowing the USARTx
(x=1,2,3,4) to wake up the MCU from Stop mode using baudrates up to 204 Kbaud. The
wake up events from Stop mode are programmable and can be:
• Start bit detection
• Any received data frame
• A specific programmed data frame
All USART interfaces can be served by the DMA controller.

Table 13. STM32L452xx USART/UART/LPUART features

USART modes/features(1) USART1 USART2 USART3 UART4 LPUART1

Hardware flow control for modem X X X X X

Continuous communication using DMA X X X X X
Multiprocessor communication X X X X X
Synchronous mode X X X - -
Smartcard mode X X X - -
Single-wire half-duplex communication X X X X X
IrDA SIR ENDEC block X X X X -
LIN mode X X X X -
Dual clock domain X X X X X
Wakeup from Stop 0 / Stop 1 modes X X X X X
Wakeup from Stop 2 mode - - - - X
Receiver timeout interrupt X X X X -
Modbus communication X X X X -
Auto baud rate detection X (4 modes) -
Driver Enable X X X X X
LPUART/USART data length 7, 8 and 9 bits
1. X = supported.

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3.27 Low-power universal asynchronous receiver transmitter

(LPUART)
The device embeds one Low-Power UART. The LPUART supports asynchronous serial
communication with minimum power consumption. It supports half duplex single wire
communication and modem operations (CTS/RTS). It allows multiprocessor
communication.
The LPUART has a clock domain independent from the CPU clock, and can wakeup the
system from Stop mode using baudrates up to 220 Kbaud. The wake up events from Stop
mode are programmable and can be:
• Start bit detection
• Any received data frame
• A specific programmed data frame
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600
baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while
having an extremely low energy consumption. Higher speed clock can be used to reach
higher baudrates.
LPUART interface can be served by the DMA controller.

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3.28 Serial peripheral interface (SPI)

Three SPI interfaces allow communication up to 40 Mbits/s in master and up to 24 Mbits/s
slave modes, in half-duplex, full-duplex and simplex modes. The 3-bit prescaler gives 8
master mode frequencies and the frame size is configurable from 4 bits to 16 bits. The SPI
interfaces support NSS pulse mode, TI mode and Hardware CRC calculation.
All SPI interfaces can be served by the DMA controller.

3.29 Serial audio interfaces (SAI)

The device embeds 1 SAI. Refer to Table 14: SAI implementation for the features
implementation. The SAI bus interface handles communications between the
microcontroller and the serial audio protocol.
The SAI peripheral supports:
• Two independent audio sub-blocks which can be transmitters or receivers with their
respective FIFO.
• 8-word integrated FIFOs for each audio sub-block.
• Synchronous or asynchronous mode between the audio sub-blocks.
• Master or slave configuration independent for both audio sub-blocks.
• Clock generator for each audio block to target independent audio frequency sampling
when both audio sub-blocks are configured in master mode.
• Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit.
• Peripheral with large configurability and flexibility permitting to target as example the
following audio protocol: I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF
out.
• Up to 16 slots available with configurable size and with the possibility to select which
ones are active in the audio frame.
• Number of bits by frame may be configurable.
• Frame synchronization active level configurable (offset, bit length, level).
• First active bit position in the slot is configurable.
• LSB first or MSB first for data transfer.
• Mute mode.
• Stereo/Mono audio frame capability.
• Communication clock strobing edge configurable (SCK).
• Error flags with associated interrupts if enabled respectively.
– Overrun and underrun detection.
– Anticipated frame synchronization signal detection in slave mode.
– Late frame synchronization signal detection in slave mode.
– Codec not ready for the AC’97 mode in reception.
• Interruption sources when enabled:
– Errors.
– FIFO requests.
• DMA interface with 2 dedicated channels to handle access to the dedicated integrated
FIFO of each SAI audio sub-block.

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Table 14. SAI implementation

SAI features Support(1)

I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 X

Mute mode X
Stereo/Mono audio frame capability. X
16 slots X
Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit X
FIFO Size X (8 Word)
SPDIF X
1. X: supported

3.30 Controller area network (CAN)

The CAN is compliant with specifications 2.0A and B (active) with a bitrate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.
The CAN peripheral supports:
• Supports CAN protocol version 2.0 A, B Active
• Bit rates up to 1 Mbit/s
• Transmission
– Three transmit mailboxes
– Configurable transmit priority
• Reception
– Two receive FIFOs with three stages
– 14 Scalable filter banks
– Identifier list feature
– Configurable FIFO overrun
• Time-triggered communication option
– Disable automatic retransmission mode
– 16-bit free running timer
– Time Stamp sent in last two data bytes
• Management
– Maskable interrupts
– Software-efficient mailbox mapping at a unique address space

3.31 Secure digital input/output and MultiMediaCards Interface

(SDMMC)
The card host interface (SDMMC) provides an interface between the APB peripheral bus
and MultiMediaCards (MMCs), SD memory cards and SDIO cards.

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The SDMMC features include the following:

• Full compliance with MultiMediaCard System Specification Version 4.2. Card support
for three different databus modes: 1-bit (default), 4-bit and 8-bit
• Full compatibility with previous versions of MultiMediaCards (forward compatibility)
• Full compliance with SD Memory Card Specifications Version 2.0
• Full compliance with SD I/O Card Specification Version 2.0: card support for two
different databus modes: 1-bit (default) and 4-bit
• Data transfer up to 48 MHz for the 8 bit mode
• Data write and read with DMA capability

3.32 Universal serial bus (USB)

The STM32L452xx devices embed a full-speed USB device peripheral compliant with the
USB specification version 2.0. The internal USB PHY supports USB FS signaling,
embedded DP pull-up and also battery charging detection according to Battery Charging
Specification Revision 1.2. The USB interface implements a full-speed (12 Mbit/s) function
interface with added support for USB 2.0 Link Power Management. It has software-
configurable endpoint setting with packet memory up-to 1 KB and suspend/resume support.
It requires a precise 48 MHz clock which can be generated from the internal main PLL (the
clock source must use a HSE crystal oscillator) or by the internal 48 MHz oscillator in
automatic trimming mode. The synchronization for this oscillator can be taken from the USB
data stream itself (SOF signalization) which allows crystal less operation.

3.33 Clock recovery system (CRS)

The STM32L452xx devices embed a special block which allows automatic trimming of the
internal 48 MHz oscillator to guarantee its optimal accuracy over the whole device
operational range. This automatic trimming is based on the external synchronization signal,
which could be either derived from LSE oscillator, from an external signal on CRS_SYNC
pin or generated by user software. For faster lock-in during startup it is also possible to
combine automatic trimming with manual trimming action.

3.34 Quad SPI memory interface (QUADSPI)

The Quad SPI is a specialized communication interface targeting single, dual or quad SPI
Flash memories. It can operate in any of the three following modes:
• Indirect mode: all the operations are performed using the QUADSPI registers
• Status polling mode: the external Flash memory status register is periodically read and
an interrupt can be generated in case of flag setting
• Memory-mapped mode: the external Flash is memory mapped and is seen by the
system as if it were an internal memory
Both throughput and capacity can be increased two-fold using dual-flash mode, where two
Quad SPI flash memories are accessed simultaneously.

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The Quad SPI interface supports:

• Three functional modes: indirect, status-polling, and memory-mapped
• Dual-flash mode, where 8 bits can be sent/received simultaneously by accessing two
flash memories in parallel.
• SDR and DDR support
• Fully programmable opcode for both indirect and memory mapped mode
• Fully programmable frame format for both indirect and memory mapped mode
• Each of the five following phases can be configured independently (enable, length,
single/dual/quad communication)
– Instruction phase
– Address phase
– Alternate bytes phase
– Dummy cycles phase
– Data phase
• Integrated FIFO for reception and transmission
• 8, 16, and 32-bit data accesses are allowed
• DMA channel for indirect mode operations
• Programmable masking for external flash flag management
• Timeout management
• Interrupt generation on FIFO threshold, timeout, status match, operation complete, and
access error

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3.35 Development support

3.35.1 Serial wire JTAG debug port (SWJ-DP)

The Arm® SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using only two pins instead of the five required by the JTAG (JTAG pins
can be reused as GPIO with alternate function): the JTAG TMS and TCK pins are shared
with SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.

3.35.2 Embedded Trace Macrocell™

The Arm® Embedded Trace Macrocell™ provides a greater visibility of the instruction and
data flow inside the CPU core by streaming compressed data at a very high rate from the
STM32L452xx through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. Real-time instruction and data flow activity be recorded and then
formatted for display on the host computer that runs the debugger software. TPA hardware
is commercially available from common development tool vendors.
The Embedded Trace Macrocell™ operates with third party debugger software tools.

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4 Pinouts and pin description

Figure 6. STM32L452Vx LQFP100 pinout(1)

PH3-BOOT0

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB8

PB7
PB6
PB5
PB4
PB3
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 VDDUSB
PE5 4 72 PA13
PE6 5 71 PA12
VBAT 6 70 PA11
PC13 7 69 PA10
PC14-OSC32_IN 8 68 PA9
PC15-OSC32_OUT 9 67 PA8
VSS 10 66 PC9
VDD 11 65 PC8
PH0-OSC_IN 12 64 PC7
PH1-OSC_OUT 13 LQFP100 63 PC6
NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2 17 59 PD12
PC3 18 58 PD11
VSSA 19 57 PD10
VREF- 20 56 PD9
VREF+ 21 55 PD8
VDDA 22 54 PB15
PA0 23 53 PB14
PA1 24 52 PB13
PA2 25 51 PB12
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
VSS
VDD

PC4
PC5
PB0
PB1
PB2
PE7
PE8
PE9
PE10

PE12
PE13
PE14
PE15
PB10

VSS
VDD
PA3

PA4
PA5
PA6
PA7

PE11

PB11

MSv40963V2

1. The above figure shows the package top view.

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Figure 7. STM32L452Vx UFBGA100 ballout(1)

1 2 3 4 5 6 7 8 9 10 11 12

A PE3 PE1 PB8 PH3-BOOT0 PD7 PD5 PB4 PB3 PA15 PA14 PA13 PA12

B PE4 PE2 PB9 PB7 PB6 PD6 PD4 PD3 PD1 PC12 PC10 PA11

C PC13 PE5 PE0 VDD PB5 PD2 PD0 PC11 VDDUSB PA10

PC14-
D PE6 VSS PA9 PA8 PC9
OSC32_IN

PC15-
E VBAT VSS PC8 PC7 PC6
OSC32_OUT

F PH0-OSC_IN VSS VSS VSS

PH1-
UFBGA100
G VDD VDD VDD
OSC_OUT

H PC0 NRST VDD PD15 PD14 PD13

J VSSA PC1 PC2 PD12 PD11 PD10

K VREF- PC3 PA2 PA5 PC4 PD9 PD8 PB15 PB14 PB13

L VREF+ PA0 PA3 PA6 PC5 PB2 PE8 PE10 PE12 PB10 PB11 PB12

M VDDA PA1 PA4 PA7 PB0 PB1 PE7 PE9 PE11 PE13 PE14 PE15

MSv40961V2

1. The above figure shows the package top view.

Figure 8. STM32L452Rx LQFP64 pinout(1)

PH3-BOOT0

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PD2
PB9
PB8

PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49

VBAT 1 48 VDDUSB
PC13 2 47 VSS
PC14-OSC32_IN 3 46 PA13
PC15-OSC32_OUT 4 45 PA12
PH0-OSC_IN 5 44 PA11
PH1-OSC_OUT 6 43 PA10
NRST 7 42 PA9
PC0 8 41 PA8
PC1 9 LQFP64 40 PC9
PC2 10 39 PC8
PC3 11 38 PC7
VSSA/VREF- 12 37 PC6
VDDA/VREF+ 13 36 PB15
PA0 14 35 PB14
PA1 15 34 PB13
PA2 16 33 PB12
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VSS
VDD

PC4
PC5
PB0
PB1
PB2

VSS
PB10

VDD
PA3

PA4
PA5
PA6
PA7

PB11

MSv40957V2

1. The above figure shows the package top view.

58/221 DS11912 Rev 7

STM32L452xx Pinouts and pin description

Figure 9. STM32L452Rx, external SMPS device, LQFP64 pinout(1)

PH3-BOOT0
VDD12

PC12

PC10
PC11

PA15
PA14
VDD
VSS

PB9
PB8

PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
VBAT 1 48 VDDUSB
PC13 2 47 VSS
PC14-OSC32_IN 3 46 PA13
PC15-OSC32_OUT 4 45 PA12
PH0-OSC_IN 5 44 PA11
PH1-OSC_OUT 6 43 PA10
NRST 7 42 PA9
PC0 8 41 PA8
PC1 9 LQFP64 40 PC9
PC2 10 39 PC8
PC3 11 38 PC7
VSSA/VREF- 12 37 PC6
VDDA/VREF+ 13 36 PB15
PA0 14 35 PB14
PA1 15 34 PB13
PA2 16 33 PB12
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
VSS
VDD

PC4
PB0
PB1
PB2
PB10

VDD12
VSS
VDD
PA3

PA4
PA5
PA6
PA7

PB11
MSv45728V2

1. The above figure shows the package top view.

Figure 10. STM32L452Rx UFBGA64 ballout(1)

1 2 3 4 5 6 7 8

PC14-
A PC13 PB9 PB4 PB3 PA15 PA14 PA13
OSC32_IN

PC15-
B VBAT PB8 PH3-BOOT0 PD2 PC11 PC10 PA12
OSC32_OUT

C PH0-OSC_IN VSS PB7 PB5 PC12 PA10 PA9 PA11

PH1-
D VDD PB6 VSS VSS VSS PA8 PC9
OSC_OUT

E NRST PC1 PC0 VDD VDDUSB VDD PC7 PC8

F VSSA/VREF- PC2 PA2 PA5 PB0 PC6 PB15 PB14

G PC3 PA0 PA3 PA6 PB1 PB2 PB10 PB13

H VDDA/VREF+ PA1 PA4 PA7 PC4 PC5 PB11 PB12

MSv40959V2

1. The above figure shows the package top view.

DS11912 Rev 7 59/221

91
Pinouts and pin description STM32L452xx

Figure 11. STM32L452Rx WLCSP64 pinout(1)

1 2 3 4 5 6 7 8

A VDDUSB PA15 PC12 PB4 PB7 PB8 VSS VDD

B VSS VDD PC11 PB3 PB6 PH3-BOOT0 VBAT PC13

PC15- PC14-
C PA10 PA13 PA14 PD2 PB5 PB9
OSC32_OUT OSC32_IN

D PA9 PA11 PA12 PC10 PC1 PC2 PC0 PH0-OSC_IN

PH1-
E PC7 PC9 PA8 PC4 PA7 PA1 PC3
OSC_OUT

F PB15 PC6 PC8 PB1 PA5 PA3 VDDA/VREF+ NRST

G PB14 PB13 PB12 PB2 PC5 PA4 PA2 VSSA/VREF-

H VDD VSS PB11 PB10 PB0 PA6 VDD PA0

MSv40955V2

1. The above figure shows the package top view.

Figure 12. STM32L452Rx, external SMPS device, WLCSP64 pinout(1)

1 2 3 4 5 6 7 8

A VDDUSB PA14 PC12 PB4 PB7 PB8 VSS VDD

B VSS VDD PC11 PB3 PB6 PH3-BOOT0 VDD12 PC13

PC15- PC14-
C PA10 PA13 PA15 PB5 PB9 VBAT
OSC32_OUT OSC32_IN

D PA9 PA11 PA12 PC10 PC3 PC1 PC0 PH0-OSC_IN

PH1-
E PC6 PC7 PA8 PC4 PA7 PA1 PC2
OSC_OUT

F PB15 PB13 PC8 PB2 PA5 PA3 VDDA/VREF+ NRST

G PB14 PB12 PC9 PB11 PB0 PA4 PA2 VSSA/VREF-

H VDD VSS VDD12 PB10 PB1 PA6 VDD PA0

MSv50990V1

1. The above figure shows the package top view.

60/221 DS11912 Rev 7

STM32L452xx Pinouts and pin description

Figure 13. STM32L452Cx LQFP48 pinout(1)

PH3-BOOT0

PA15
PA14
VDD
VSS
PB9
PB8

PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
VBAT 1 36 VDDUSB
PC13 2 35 VSS
PC14-OSC32_IN 3 34 PA13
PC15-OSC32_OUT 4 33 PA12
PH0-OSC_IN 5 32 PA11
PH1-OSC_OUT 6 31 PA10
NRST 7
LQFP48 30 PA9
VSSA/VREF- 8 29 PA8
VDDA/VREF+ 9 28 PB15
PA0 10 27 PB14
PA1 11 26 PB13
PA2 12 25 PB12
13
14
15
16
17
18
19
20
21
22
23
24
PB0
PB1
PB2

VSS
PB10

VDD
PA3
PA4
PA5
PA6
PA7

PB11
MSv36897V3

1. The above figure shows the package top view.

Figure 14. STM32L452Cx UFQFPN48 pinout(1)

PH3-BOOT0

PA15
PA14
VDD
VSS
PB9
PB8

PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37

VBAT 1 36 VDDUSB
PC13 2 35 VSS
PC14-OSC32_IN 3 34 PA13
PC15-OSC32_OUT 4 33 PA12
PH0-OSC_IN 5 32 PA11
PH1-OSC_OUT 6 31 PA10
NRST 7
UFQFPN48 30 PA9
VSSA/VREF- 8 29 PA8
VDDA/VREF+ 9 28 PB15
PA0 10 27 PB14
PA1 11 26 PB13
PA2 12 25 PB12
13
14
15
16
17
18
19
20
21
22
23
24
PB0
PB1
PB2

VSS
PB10

VDD
PA3
PA4
PA5
PA6
PA7

PB11

MSv40953V2

1. The above figure shows the package top view.

DS11912 Rev 7 61/221

91
Pinouts and pin description STM32L452xx

Table 15. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TT 3.6 V tolerant I/O
RST Bidirectional reset pin with embedded weak pull-up resistor

I/O structure Option for TT or FT I/Os

_f (1) I/O, Fm+ capable

(2)
_u I/O, with USB function supplied by VDDUSB
_a (3) I/O, with Analog switch function supplied by VDDA

Notes Unless otherwise specified by a note, all I/Os are set as analog inputs during and after reset.

Alternate
Functions selected through GPIOx_AFR registers
Pin functions
functions Additional
Functions directly selected/enabled through peripheral registers
functions
1. The related I/O structures in Table 16 are: FT_f, FT_fa.
2. The related I/O structures in Table 16 are: FT_u, FT_fu.
3. The related I/O structures in Table 16 are: FT_a, FT_fa, TT_a.

62/221 DS11912 Rev 7

 STM32L452xx
Table 16. STM32L452xx pin definitions
Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
TRACECK, TIM3_ETR,
- - - - - - 1 B2 PE2 I/O FT - TSC_G7_IO1, SAI1_MCLK_A, -
EVENTOUT
TRACED0, TIM3_CH1,
- - - - - - 2 A1 PE3 I/O FT - TSC_G7_IO2, SAI1_SD_B, -
EVENTOUT
DS11912 Rev 7

TRACED1, TIM3_CH2,
- - - - - - 3 B1 PE4 I/O FT - DFSDM1_DATIN3, TSC_G7_IO3, -
SAI1_FS_A, EVENTOUT
TRACED2, TIM3_CH3,
- - - - - - 4 C2 PE5 I/O FT - DFSDM1_CKIN3, TSC_G7_IO4, -
SAI1_SCK_A, EVENTOUT
TRACED3, TIM3_CH4, SAI1_SD_A,
- - - - - - 5 D2 PE6 I/O FT - RTC_TAMP3/WKUP3
EVENTOUT
1 B7 C6 1 1 B2 6 E2 VBAT S - - - -

Pinouts and pin description

(1)
RTC_TAMP1/RTC_TS/RTC_OUT/W
2 B8 B8 2 2 A2 7 C1 PC13 I/O FT (2) EVENTOUT
KUP2
PC14-
(1)
OSC32_
3 C8 C8 3 3 A1 8 D1 I/O FT (2) EVENTOUT OSC32_IN
IN
(PC14)
PC15-
(1)
OSC32_
4 C7 C7 4 4 B1 9 E1 I/O FT (2) EVENTOUT OSC32_OUT
OUT
63/221

(PC15)
 Table 16. STM32L452xx pin definitions (continued)
64/221

Pinouts and pin description

Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
- - - - - - 10 F2 VSS S - - - -
- - - - - - 11 G2 VDD S - - - -
PH0-
5 D8 D8 5 5 C1 12 F1 OSC_IN I/O FT - EVENTOUT OSC_IN
(PH0)
PH1-
DS11912 Rev 7

OSC_
6 E8 E8 6 6 D1 13 G1 I/O FT - EVENTOUT OSC_OUT
OUT
(PH1)
7 F8 F8 7 7 E1 14 H2 NRST I/O RST - - -
LPTIM1_IN1, I2C4_SCL, I2C3_SCL,
- D7 D7 8 8 E3 15 H1 PC0 I/O FT_fa - LPUART1_RX, LPTIM2_IN1, ADC1_IN1
EVENTOUT
TRACED0, LPTIM1_OUT,
- D5 D6 9 9 E2 16 J2 PC1 I/O FT_fa - I2C4_SDA, I2C3_SDA, ADC1_IN2
LPUART1_TX, EVENTOUT
LPTIM1_IN2, SPI2_MISO,
- D6 E7 10 10 F2 17 J3 PC2 I/O FT_a - ADC1_IN3
DFSDM1_CKOUT, EVENTOUT
LPTIM1_ETR, SPI2_MOSI,
- E7 D5 11 11 G1 18 K2 PC3 I/O FT_a - SAI1_SD_A, LPTIM2_ETR, ADC1_IN4
EVENTOUT

STM32L452xx
- - - - - - 19 J1 VSSA S - - - -
- - - - - - 20 K1 VREF- S - - - -
 Table 16. STM32L452xx pin definitions (continued)

STM32L452xx
Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
VSSA/
8 G8 G8 12 12 F1 - - S - - - -
VREF-
- - - - - - 21 L1 VREF+ S - - - VREFBUF_OUT
- - - - - - 22 M1 VDDA S - - - -
VDDA/
9 F7 F7 13 13 H1 - - S - - - -
VREF+
DS11912 Rev 7

TIM2_CH1, USART2_CTS,
UART4_TX, COMP1_OUT, OPAMP1_VINP, COMP1_INM,
10 H8 H8 14 14 G2 23 L2 PA0 I/O FT_a -
SAI1_EXTCLK, TIM2_ETR, ADC1_IN5, RTC_TAMP2/WKUP1
EVENTOUT
TIM2_CH2, I2C1_SMBA,
SPI1_SCK, USART2_RTS_DE, OPAMP1_VINM, COMP1_INP,
11 E6 E6 15 15 H2 24 M2 PA1 I/O FT_a -
UART4_RX, TIM15_CH1N, ADC1_IN6
EVENTOUT
TIM2_CH3, USART2_TX,
LPUART1_TX,

Pinouts and pin description

COMP2_INM, ADC1_IN7,
12 G7 G7 16 16 F3 25 K3 PA2 I/O FT_a - QUADSPI_BK1_NCS,
WKUP4/LSCO
COMP2_OUT, TIM15_CH1,
EVENTOUT
TIM2_CH4, USART2_RX,
LPUART1_RX, QUADSPI_CLK, OPAMP1_VOUT, COMP2_INP,
13 F6 F6 17 17 G3 26 L3 PA3 I/O TT_a -
SAI1_MCLK_A, TIM15_CH2, ADC1_IN8
EVENTOUT
- - - 18 18 C2 27 E3 VSS S - - - -
65/221

- H7 H7 19 19 D2 28 H3 VDD S - - - -
 Table 16. STM32L452xx pin definitions (continued)
66/221

Pinouts and pin description

Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
SPI1_NSS, SPI3_NSS,
COMP1_INM, COMP2_INM,
14 G6 G6 20 20 H3 29 M3 PA4 I/O TT_a - USART2_CK, SAI1_FS_B,
ADC1_IN9, DAC1_OUT1
LPTIM2_OUT, EVENTOUT
TIM2_CH1, TIM2_ETR, SPI1_SCK,
COMP1_INM, COMP2_INM,
15 F5 F5 21 21 F4 30 K4 PA5 I/O TT_a - DFSDM1_CKOUT, LPTIM2_ETR,
ADC1_IN10
EVENTOUT
DS11912 Rev 7

TIM1_BKIN, TIM3_CH1,
SPI1_MISO, COMP1_OUT,
USART3_CTS, LPUART1_CTS,
16 H6 H6 22 22 G4 31 L4 PA6 I/O FT_a - ADC1_IN11
QUADSPI_BK1_IO3,
TIM1_BKIN_COMP2, TIM16_CH1,
EVENTOUT
TIM1_CH1N, TIM3_CH2,
I2C3_SCL, SPI1_MOSI,
17 E5 E5 23 23 H4 32 M4 PA7 I/O FT_fa - DFSDM1_DATIN0, ADC1_IN12
QUADSPI_BK1_IO2, COMP2_OUT,
EVENTOUT
- E4 E4 24 24 H5 33 K5 PC4 I/O FT_a - USART3_TX, EVENTOUT COMP1_INM, ADC1_IN13
- G5 - 25 - H6 34 L5 PC5 I/O FT_a - USART3_RX, EVENTOUT COMP1_INP, ADC1_IN14, WKUP5
TIM1_CH2N, TIM3_CH3,
SPI1_NSS, DFSDM1_CKIN0,
18 H5 G5 26 25 F5 35 M5 PB0 I/O FT_a - USART3_CK, QUADSPI_BK1_IO1, ADC1_IN15

STM32L452xx
COMP1_OUT, SAI1_EXTCLK,
EVENTOUT
 Table 16. STM32L452xx pin definitions (continued)

STM32L452xx
Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
TIM1_CH3N, TIM3_CH4,
DFSDM1_DATIN0,
USART3_RTS_DE,
19 F4 H5 27 26 G5 36 M6 PB1 I/O FT_a - COMP1_INM, ADC1_IN16
LPUART1_RTS_DE,
QUADSPI_BK1_IO0, LPTIM2_IN1,
EVENTOUT
RTC_OUT, LPTIM1_OUT,
DS11912 Rev 7

20 G4 F4 28 27 G6 37 L6 PB2 I/O FT_a - I2C3_SMBA, DFSDM1_CKIN0, COMP1_INP

EVENTOUT
TIM1_ETR, DFSDM1_DATIN2,
- - - - - - 38 M7 PE7 I/O FT - -
SAI1_SD_B, EVENTOUT
TIM1_CH1N, DFSDM1_CKIN2,
- - - - - - 39 L7 PE8 I/O FT - -
SAI1_SCK_B, EVENTOUT
TIM1_CH1, DFSDM1_CKOUT,
- - - - - - 40 M8 PE9 I/O FT - -
SAI1_FS_B, EVENTOUT
TIM1_CH2N, TSC_G5_IO1,

Pinouts and pin description

- - - - - - 41 L8 PE10 I/O FT - QUADSPI_CLK, SAI1_MCLK_B, -
EVENTOUT
TIM1_CH2, TSC_G5_IO2,
- - - - - - 42 M9 PE11 I/O FT - -
QUADSPI_BK1_NCS, EVENTOUT
TIM1_CH3N, SPI1_NSS,
- - - - - - 43 L9 PE12 I/O FT - TSC_G5_IO3, QUADSPI_BK1_IO0, -
EVENTOUT
67/221
 Table 16. STM32L452xx pin definitions (continued)
68/221

Pinouts and pin description

Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
TIM1_CH3, SPI1_SCK,
- - - - - - 44 M10 PE13 I/O FT - TSC_G5_IO4, QUADSPI_BK1_IO1, -
EVENTOUT
TIM1_CH4, TIM1_BKIN2,
- - - - - - 45 M11 PE14 I/O FT - TIM1_BKIN2_COMP2, SPI1_MISO, -
QUADSPI_BK1_IO2, EVENTOUT
DS11912 Rev 7

TIM1_BKIN, TIM1_BKIN_COMP1,
- - - - - - 46 M12 PE15 I/O FT - SPI1_MOSI, QUADSPI_BK1_IO3, -
EVENTOUT
TIM2_CH3, I2C4_SCL, I2C2_SCL,
SPI2_SCK, USART3_TX,
21 H4 H4 29 28 G7 47 L10 PB10 I/O FT_f - LPUART1_RX, TSC_SYNC, -
QUADSPI_CLK, COMP1_OUT,
SAI1_SCK_A, EVENTOUT
TIM2_CH4, I2C4_SDA, I2C2_SDA,
USART3_RX, LPUART1_TX,
22 H3 G4 30 29 H7 48 L11 PB11 I/O FT_f - -
QUADSPI_BK1_NCS,
COMP2_OUT, EVENTOUT
- - H3 - 30 - - - VDD12 S - - - -
23 H2 H2 31 31 D6 49 F12 VSS S - - - -
24 H1 H1 32 32 E6 50 G12 VDD S - - - -

STM32L452xx
 Table 16. STM32L452xx pin definitions (continued)

STM32L452xx
Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
TIM1_BKIN, TIM1_BKIN_COMP2,
I2C2_SMBA, SPI2_NSS,
DFSDM1_DATIN1, USART3_CK,
25 G3 G2 33 33 H8 51 L12 PB12 I/O FT - -
LPUART1_RTS_DE, TSC_G1_IO1,
CAN1_RX, SAI1_FS_A,
TIM15_BKIN, EVENTOUT
TIM1_CH1N, I2C2_SCL,
DS11912 Rev 7

SPI2_SCK, DFSDM1_CKIN1,
USART3_CTS, LPUART1_CTS,
26 G2 F2 34 34 G8 52 K12 PB13 I/O FT_f - -
TSC_G1_IO2, CAN1_TX,
SAI1_SCK_A, TIM15_CH1N,
EVENTOUT
TIM1_CH2N, I2C2_SDA,
SPI2_MISO, DFSDM1_DATIN2,
27 G1 G1 35 35 F8 53 K11 PB14 I/O FT_f - USART3_RTS_DE, TSC_G1_IO3, -
SAI1_MCLK_A, TIM15_CH1,
EVENTOUT
RTC_REFIN, TIM1_CH3N,

Pinouts and pin description

SPI2_MOSI, DFSDM1_CKIN2,
28 F1 F1 36 36 F7 54 K10 PB15 I/O FT - -
TSC_G1_IO4, SAI1_SD_A,
TIM15_CH2, EVENTOUT
- - - - - - 55 K9 PD8 I/O FT - USART3_TX, EVENTOUT -
- - - - - - 56 K8 PD9 I/O FT - USART3_RX, EVENTOUT -
USART3_CK, TSC_G6_IO1,
- - - - - - 57 J12 PD10 I/O FT - -
EVENTOUT
69/221
 Table 16. STM32L452xx pin definitions (continued)
70/221

Pinouts and pin description

Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
I2C4_SMBA, USART3_CTS,
- - - - - - 58 J11 PD11 I/O FT - TSC_G6_IO2, LPTIM2_ETR, -
EVENTOUT
I2C4_SCL, USART3_RTS_DE,
- - - - - - 59 J10 PD12 I/O FT - TSC_G6_IO3, LPTIM2_IN1, -
EVENTOUT
DS11912 Rev 7

I2C4_SDA, TSC_G6_IO4,
- - - - - - 60 H12 PD13 I/O FT - -
LPTIM2_OUT, EVENTOUT
- - - - - - 61 H11 PD14 I/O FT - EVENTOUT -
- - - - - - 62 H10 PD15 I/O FT - EVENTOUT -
TIM3_CH1, DFSDM1_CKIN3,
- F2 E1 37 37 F6 63 E12 PC6 I/O FT - TSC_G4_IO1, SDMMC1_D6, -
EVENTOUT
TIM3_CH2, DFSDM1_DATIN3,
- E1 E2 38 38 E7 64 E11 PC7 I/O FT - TSC_G4_IO2, SDMMC1_D7, -
EVENTOUT
TIM3_CH3, TSC_G4_IO3,
- F3 F3 39 39 E8 65 E10 PC8 I/O FT - -
SDMMC1_D0, EVENTOUT
TIM3_CH4, TSC_G4_IO4,
- E2 G3 40 40 D8 66 D12 PC9 I/O FT - USB_NOE, SDMMC1_D1, -
EVENTOUT

STM32L452xx
MCO, TIM1_CH1, DFSDM1_CKIN1,
29 E3 E3 41 41 D7 67 D11 PA8 I/O FT - USART1_CK, SAI1_SCK_A, -
LPTIM2_OUT, EVENTOUT
 Table 16. STM32L452xx pin definitions (continued)

STM32L452xx
Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
TIM1_CH2, I2C1_SCL,
DFSDM1_DATIN1, USART1_TX,
30 D1 D1 42 42 C7 68 D10 PA9 I/O FT_f - -
SAI1_FS_A, TIM15_BKIN,
EVENTOUT
TIM1_CH3, I2C1_SDA,
31 C1 C1 43 43 C6 69 C12 PA10 I/O FT_f - USART1_RX, USB_CRS_SYNC, -
SAI1_SD_A, EVENTOUT
DS11912 Rev 7

TIM1_CH4, TIM1_BKIN2,
SPI1_MISO, COMP1_OUT,
32 D2 D2 44 44 C8 70 B12 PA11 I/O FT_u - USART1_CTS, CAN1_RX, -
USB_DM, TIM1_BKIN2_COMP1,
EVENTOUT
TIM1_ETR, SPI1_MOSI,
33 D3 D3 45 45 B8 71 A12 PA12 I/O FT_u - USART1_RTS_DE, CAN1_TX, -
USB_DP, EVENTOUT
PA13
(3) JTMS/SWDAT, IR_OUT, USB_NOE,
34 C2 C2 46 46 A8 72 A11 (JTMS/ I/O FT -

Pinouts and pin description

SAI1_SD_B, EVENTOUT
SWDIO)
35 B1 B1 47 47 D5 - - VSS S - - - -
36 A1 A1 48 48 E5 73 C11 VDDUSB S - - - -
- - - - - - 74 F11 VSS S - - - -
- B2 B2 - - - 75 G11 VDD S - - - -
PA14 JTCK/SWCLK, LPTIM1_OUT,
(3)
37 C3 A2 49 49 A7 76 A10 (JTCK/ I/O FT I2C1_SMBA, I2C4_SMBA, -
71/221

SWCLK) SAI1_FS_B, EVENTOUT

 Table 16. STM32L452xx pin definitions (continued)
72/221

Pinouts and pin description

Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
JTDI, TIM2_CH1, TIM2_ETR,
USART2_RX, SPI1_NSS,
PA15 (3)
38 A2 C3 50 50 A6 77 A9 I/O FT SPI3_NSS, USART3_RTS_DE, -
(JTDI)
UART4_RTS_DE, TSC_G3_IO1,
EVENTOUT
TRACED1, SPI3_SCK,
USART3_TX, UART4_TX,
DS11912 Rev 7

- D4 D4 51 51 B7 78 B11 PC10 I/O FT - -

TSC_G3_IO2, SDMMC1_D2,
EVENTOUT
SPI3_MISO, USART3_RX,
- B3 B3 52 52 B6 79 C10 PC11 I/O FT - UART4_RX, TSC_G3_IO3, -
SDMMC1_D3, EVENTOUT
TRACED3, SPI3_MOSI,
- A3 A3 53 53 C5 80 B10 PC12 I/O FT - USART3_CK, TSC_G3_IO4, -
SDMMC1_CK, EVENTOUT
- - - - - - 81 C9 PD0 I/O FT - SPI2_NSS, CAN1_RX, EVENTOUT -
- - - - - - 82 B9 PD1 I/O FT - SPI2_SCK, CAN1_TX, EVENTOUT -
TRACED2, TIM3_ETR,
- C4 - 54 - B5 83 C8 PD2 I/O FT - USART3_RTS_DE, TSC_SYNC, -
SDMMC1_CMD, EVENTOUT
SPI2_MISO, DFSDM1_DATIN0,

STM32L452xx
- - - - - - 84 B8 PD3 I/O FT - USART2_CTS, -
QUADSPI_BK2_NCS, EVENTOUT
 Table 16. STM32L452xx pin definitions (continued)

STM32L452xx
Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
SPI2_MOSI, DFSDM1_CKIN0,
- - - - - - 85 B7 PD4 I/O FT - USART2_RTS_DE, -
QUADSPI_BK2_IO0, EVENTOUT
USART2_TX, QUADSPI_BK2_IO1,
- - - - - - 86 A6 PD5 I/O FT - -
EVENTOUT
DFSDM1_DATIN1, USART2_RX,
DS11912 Rev 7

- - - - - - 87 B6 PD6 I/O FT - QUADSPI_BK2_IO2, SAI1_SD_A, -

EVENTOUT
DFSDM1_CKIN1, USART2_CK,
- - - - - - 88 A5 PD7 I/O FT - -
QUADSPI_BK2_IO3, EVENTOUT
PB3 JTDO/TRACESWO, TIM2_CH2,
(JTDO/ (3) SPI1_SCK, SPI3_SCK,
39 B4 B4 55 54 A5 89 A8 I/O FT_a COMP2_INM
TRACE USART1_RTS_DE, SAI1_SCK_B,
SWO) EVENTOUT
NJTRST, TIM3_CH1, I2C3_SDA,
PB4 SPI1_MISO, SPI3_MISO,
40 A4 A4 56 55 A4 90 A7 I/O FT_fa (3) COMP2_INP

Pinouts and pin description

(NJTRST) USART1_CTS, TSC_G2_IO1,
SAI1_MCLK_B, EVENTOUT
LPTIM1_IN1, TIM3_CH2,
CAN1_RX, I2C1_SMBA,
SPI1_MOSI, SPI3_MOSI,
41 C5 C4 57 56 C4 91 C5 PB5 I/O FT - -
USART1_CK, TSC_G2_IO2,
COMP2_OUT, SAI1_SD_B,
TIM16_BKIN, EVENTOUT
73/221
 Table 16. STM32L452xx pin definitions (continued)
74/221

Pinouts and pin description

Pin Number Pin functions

LQFP48, UFQFPN48
Pin name

WLCSP64 SMPS
(function

LQFP64 SMPS

I/O structure
after Alternate functions Additional functions

UFBGA100
WLCSP64

UFBGA64
reset)

LQFP100

Pin type
LQFP64

Notes
LPTIM1_ETR, I2C1_SCL,
I2C4_SCL, USART1_TX, CAN1_TX,
42 B5 B5 58 57 D3 92 B5 PB6 I/O FT_fa - COMP2_INP
TSC_G2_IO3, SAI1_FS_B,
TIM16_CH1N, EVENTOUT
LPTIM1_IN2, I2C1_SDA,
I2C4_SDA, USART1_RX,
43 A5 A5 59 58 C3 93 B4 PB7 I/O FT_fa - COMP2_INM, PVD_IN
UART4_CTS, TSC_G2_IO4,
DS11912 Rev 7

EVENTOUT
PH3-
44 B6 B6 60 59 B4 94 A4 BOOT0 I/O FT - EVENTOUT -
(BOOT0)
I2C1_SCL, CAN1_RX,
45 A6 A6 61 60 B3 95 A3 PB8 I/O FT_f - SDMMC1_D4, SAI1_MCLK_A, -
TIM16_CH1, EVENTOUT
IR_OUT, I2C1_SDA, SPI2_NSS,
46 C6 C5 62 61 A3 96 B3 PB9 I/O FT_f - CAN1_TX, SDMMC1_D5, -
SAI1_FS_A, EVENTOUT
- - B7 - 62 - - - VDD12 S - - - -
- - - - - - 97 C3 PE0 I/O FT - TIM16_CH1, EVENTOUT -
- - - - - - 98 A2 PE1 I/O FT - EVENTOUT -
47 A7 A7 63 63 D4 99 D3 VSS S - - - -

STM32L452xx
48 A8 A8 64 64 E4 100 C4 VDD S - - - -
 STM32L452xx
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current (3 mA), the use of GPIOs PC13 to
PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).
2. After a Backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of the RTC registers which are not
reset by the system reset. For details on how to manage these GPIOs, refer to the Backup domain and RTC register descriptions in the RM0394 reference
manual.
3. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13, PB4 pins and the internal pull-down
on PA14 pin are activated.
DS11912 Rev 7

Pinouts and pin description

75/221
 Table 17. Alternate function AF0 to AF7(1)
76/221

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3

PA0 - TIM2_CH1 - - - - - USART2_CTS

USART2_RTS_
PA1 - TIM2_CH2 - - I2C1_SMBA SPI1_SCK -
DE
PA2 - TIM2_CH3 - - - - - USART2_TX
PA3 - TIM2_CH4 - - - - - USART2_RX
PA4 - - - - - SPI1_NSS SPI3_NSS USART2_CK
DFSDM1_
PA5 - TIM2_CH1 TIM2_ETR - - SPI1_SCK -
CKOUT
DS11912 Rev 7

PA6 - TIM1_BKIN TIM3_CH1 - - SPI1_MISO COMP1_OUT USART3_CTS

DFSDM1_
PA7 - TIM1_CH1N TIM3_CH2 - I2C3_SCL SPI1_MOSI -
DATIN0
Port A DFSDM1_
PA8 MCO TIM1_CH1 - - - - USART1_CK
CKIN1
DFSDM1_
PA9 - TIM1_CH2 - - I2C1_SCL - USART1_TX
DATIN1
PA10 - TIM1_CH3 - - I2C1_SDA - - USART1_RX
PA11 - TIM1_CH4 TIM1_BKIN2 - - SPI1_MISO COMP1_OUT USART1_CTS
USART1_RTS_
PA12 - TIM1_ETR - - - SPI1_MOSI -
DE
PA13 JTMS/SWDAT IR_OUT - - - - - -
PA14 JTCK/SWCLK LPTIM1_OUT - - I2C1_SMBA I2C4_SMBA - -

STM32L452xx
USART3_RTS_
PA15 JTDI TIM2_CH1 TIM2_ETR USART2_RX - SPI1_NSS SPI3_NSS
DE
 Table 17. Alternate function AF0 to AF7(1) (continued)

STM32L452xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3

DFSDM1_
PB0 - TIM1_CH2N TIM3_CH3 - - SPI1_NSS USART3_CK
CKIN0
DFSDM1_ USART3_RTS_
PB1 - TIM1_CH3N TIM3_CH4 - - -
DATIN0 DE
DFSDM1_
PB2 RTC_OUT LPTIM1_OUT - - I2C3_SMBA - -
CKIN0
JTDO/ USART1_RTS_
PB3 TIM2_CH2 - - - SPI1_SCK SPI3_SCK
TRACESWO DE
PB4 NJTRST - TIM3_CH1 - I2C3_SDA SPI1_MISO SPI3_MISO USART1_CTS
DS11912 Rev 7

PB5 - LPTIM1_IN1 TIM3_CH2 CAN1_RX I2C1_SMBA SPI1_MOSI SPI3_MOSI USART1_CK

PB6 - LPTIM1_ETR - - I2C1_SCL I2C4_SCL - USART1_TX
PB7 - LPTIM1_IN2 - - I2C1_SDA I2C4_SDA - USART1_RX
Port B
PB8 - - - - I2C1_SCL - - -
PB9 - IR_OUT - - I2C1_SDA SPI2_NSS - -
PB10 - TIM2_CH3 - I2C4_SCL I2C2_SCL SPI2_SCK - USART3_TX
PB11 - TIM2_CH4 - I2C4_SDA I2C2_SDA - - USART3_RX
TIM1_BKIN_C DFSDM1_

Pinouts and pin description

PB12 - TIM1_BKIN - I2C2_SMBA SPI2_NSS USART3_CK
OMP2 DATIN1
DFSDM1_
PB13 - TIM1_CH1N - - I2C2_SCL SPI2_SCK USART3_CTS
CKIN1
DFSDM1_ USART3_RTS_
PB14 - TIM1_CH2N - - I2C2_SDA SPI2_MISO
DATIN2 DE
DFSDM1_
PB15 RTC_REFIN TIM1_CH3N - - - SPI2_MOSI -
CKIN2
77/221
 Table 17. Alternate function AF0 to AF7(1) (continued)
78/221

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3

PC0 - LPTIM1_IN1 I2C4_SCL - I2C3_SCL - - -

PC1 TRACED0 LPTIM1_OUT I2C4_SDA - I2C3_SDA - - -
DFSDM1_
PC2 - LPTIM1_IN2 - - - SPI2_MISO -
CKOUT
PC3 - LPTIM1_ETR - - - SPI2_MOSI - -
PC4 - - - - - - - USART3_TX
PC5 - - - - - - - USART3_RX
DFSDM1_
PC6 - - TIM3_CH1 - - - -
DS11912 Rev 7

CKIN3

Port C DFSDM1_
PC7 - - TIM3_CH2 - - - -
DATIN3
PC8 - - TIM3_CH3 - - - - -
PC9 - - TIM3_CH4 - - - - -
PC10 TRACED1 - - - - - SPI3_SCK USART3_TX
PC11 - - - - - - SPI3_MISO USART3_RX
PC12 TRACED3 - - - - - SPI3_MOSI USART3_CK
PC13 - - - - - - - -
PC14 - - - - - - - -
PC15 - - - - - - - -

STM32L452xx
 Table 17. Alternate function AF0 to AF7(1) (continued)

STM32L452xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3

PD0 - - - - - SPI2_NSS - -
PD1 - - - - - SPI2_SCK - -
USART3_RTS_
PD2 TRACED2 - TIM3_ETR - - - -
DE
DFSDM1_
PD3 - - - - - SPI2_MISO USART2_CTS
DATIN0
DFSDM1_ USART2_RTS_
PD4 - - - - - SPI2_MOSI
CKIN0 DE
PD5 - - - - - - - USART2_TX
DS11912 Rev 7

DFSDM1_
PD6 - - - - - - USART2_RX
DATIN1
Port D DFSDM1_
PD7 - - - - - - USART2_CK
CKIN1
PD8 - - - - - - - USART3_TX
PD9 - - - - - - - USART3_RX
PD10 - - - - - - - USART3_CK
PD11 - - - - I2C4_SMBA - - USART3_CTS

Pinouts and pin description

USART3_RTS_
PD12 - - - - I2C4_SCL - -
DE
PD13 - - - - I2C4_SDA - - -
PD14 - - - - - - - -
PD15 - - - - - - - -
79/221
 Table 17. Alternate function AF0 to AF7(1) (continued)
80/221

Pinouts and pin description

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3

PE0 - - - - - - - -
PE1 - - - - - - - -
PE2 TRACECK - TIM3_ETR - - - - -
PE3 TRACED0 - TIM3_CH1 - - - - -
DFSDM1_
PE4 TRACED1 - TIM3_CH2 - - - -
DATIN3
DFSDM1_
PE5 TRACED2 - TIM3_CH3 - - - -
CKIN3
DS11912 Rev 7

PE6 TRACED3 - TIM3_CH4 - - - - -

DFSDM1_
PE7 - TIM1_ETR - - - - -
DATIN2
Port E DFSDM1_
PE8 - TIM1_CH1N - - - - -
CKIN2
DFSDM1_
PE9 - TIM1_CH1 - - - - -
CKOUT
PE10 - TIM1_CH2N - - - - - -
PE11 - TIM1_CH2 - - - - - -
PE12 - TIM1_CH3N - - - SPI1_NSS - -
PE13 - TIM1_CH3 - - - SPI1_SCK - -
TIM1_BKIN2_
PE14 - TIM1_CH4 TIM1_BKIN2 - SPI1_MISO - -
COMP2

STM32L452xx
TIM1_BKIN_
PE15 - TIM1_BKIN - - SPI1_MOSI - -
COMP1
 Table 17. Alternate function AF0 to AF7(1) (continued)

STM32L452xx
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

Port USART1/
TIM1/TIM2 I2C4/TIM1/ I2C4/USART2/ I2C1/I2C2/ SPI3/DFSDM/
SYS_AF SPI1/SPI2/I2C4 USART2/
LPTIM1 TIM2/TIM3 CAN1/TIM1 I2C3/I2C4 COMP1
USART3

PH0 - - - - - - - -
Port H PH1 - - - - - - - -
PH3 - - - - - - - -
1. Refer to Table 18 for AF8 to AF15.
DS11912 Rev 7

Pinouts and pin description

81/221
 Table 18. Alternate function AF8 to AF15(1)
82/221

Pinouts and pin description

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port UART4/ SDMMC1/

CAN1/USB/ TIM2/TIM15/
LPUART1/ CAN1/TSC - COMP1/ SAI1 EVENTOUT
QUADSPI TIM16/LPTIM2
CAN1 COMP2

PA0 UART4_TX - - - COMP1_OUT SAI1_EXTCLK TIM2_ETR EVENTOUT

PA1 UART4_RX - - - - - TIM15_CH1N EVENTOUT
QUADSPI_
PA2 LPUART1_TX - - COMP2_OUT - TIM15_CH1 EVENTOUT
BK1_NCS
PA3 LPUART1_RX - QUADSPI_CLK - - SAI1_MCLK_A TIM15_CH2 EVENTOUT
PA4 - - - - - SAI1_FS_B LPTIM2_OUT EVENTOUT
PA5 - - - - - - LPTIM2_ETR EVENTOUT
QUADSPI_ TIM1_BKIN_
PA6 LPUART1_CTS - - - TIM16_CH1 EVENTOUT
DS11912 Rev 7

BK1_IO3 COMP2
QUADSPI_
PA7 - - - COMP2_OUT - - EVENTOUT
BK1_IO2
Port A
PA8 - - - - - SAI1_SCK_A LPTIM2_OUT EVENTOUT
PA9 - - - - - SAI1_FS_A TIM15_BKIN EVENTOUT
USBCRS_
PA10 - - - - SAI1_SD_A - EVENTOUT
SYNC
TIM1_BKIN2_
PA11 - CAN1_RX USBDM - - - EVENTOUT
COMP1
PA12 - CAN1_TX USBDP - - - - EVENTOUT
PA13 - - USBNOE - - SAI1_SD_B - EVENTOUT
PA14 - - - - - SAI1_FS_B - EVENTOUT
UART4_RTS_

STM32L452xx
PA15 TSC_G3_IO1 - - - - - EVENTOUT
DE
 Table 18. Alternate function AF8 to AF15(1) (continued)

STM32L452xx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port UART4/ SDMMC1/

CAN1/USB/ TIM2/TIM15/
LPUART1/ CAN1/TSC - COMP1/ SAI1 EVENTOUT
QUADSPI TIM16/LPTIM2
CAN1 COMP2

QUADSPI_
PB0 - - - COMP1_OUT SAI1_EXTCLK - EVENTOUT
BK1_IO1
LPUART1_RTS QUADSPI_
PB1 - - - - LPTIM2_IN1 EVENTOUT
_DE BK1_IO0
PB2 - - - - - - - EVENTOUT
PB3 - - - - - SAI1_SCK_B - EVENTOUT
PB4 - TSC_G2_IO1 - - - SAI1_MCLK_B - EVENTOUT
PB5 - TSC_G2_IO2 - - COMP2_OUT SAI1_SD_B TIM16_BKIN EVENTOUT
DS11912 Rev 7

PB6 CAN1_TX TSC_G2_IO3 - - - SAI1_FS_B TIM16_CH1N EVENTOUT

PB7 UART4_CTS TSC_G2_IO4 - - - - - EVENTOUT
Port B
PB8 - CAN1_RX - - SDMMC1_D4 SAI1_MCLK_A TIM16_CH1 EVENTOUT
PB9 - CAN1_TX - - SDMMC1_D5 SAI1_FS_A - EVENTOUT
PB10 LPUART1_RX TSC_SYNC QUADSPI_CLK - COMP1_OUT SAI1_SCK_A - EVENTOUT
QUADSPI_
PB11 LPUART1_TX - - COMP2_OUT - - EVENTOUT
BK1_NCS
LPUART1_RTS
PB12 TSC_G1_IO1 CAN1_RX - - SAI1_FS_A TIM15_BKIN EVENTOUT
_DE

Pinouts and pin description

PB13 LPUART1_CTS TSC_G1_IO2 CAN1_TX - - SAI1_SCK_A TIM15_CH1N EVENTOUT
PB14 - TSC_G1_IO3 - - - SAI1_MCLK_A TIM15_CH1 EVENTOUT
PB15 - TSC_G1_IO4 - - - SAI1_SD_A TIM15_CH2 EVENTOUT
83/221
 Table 18. Alternate function AF8 to AF15(1) (continued)
84/221

Pinouts and pin description

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port UART4/ SDMMC1/

CAN1/USB/ TIM2/TIM15/
LPUART1/ CAN1/TSC - COMP1/ SAI1 EVENTOUT
QUADSPI TIM16/LPTIM2
CAN1 COMP2

PC0 LPUART1_RX - - - - - LPTIM2_IN1 EVENTOUT

PC1 LPUART1_TX - - - - - - EVENTOUT
PC2 - - - - - - - EVENTOUT
PC3 - - - - - SAI1_SD_A LPTIM2_ETR EVENTOUT
PC4 - - - - - - - EVENTOUT
PC5 - - - - - - - EVENTOUT
PC6 - TSC_G4_IO1 - - SDMMC1_D6 - - EVENTOUT
PC7 - TSC_G4_IO2 - - SDMMC1_D7 - - EVENTOUT
DS11912 Rev 7

Port C
PC8 - TSC_G4_IO3 - - SDMMC1_D0 - - EVENTOUT
PC9 - TSC_G4_IO4 USBNOE - SDMMC1_D1 - - EVENTOUT
PC10 UART4_TX TSC_G3_IO2 - - SDMMC1_D2 - - EVENTOUT
PC11 UART4_RX TSC_G3_IO3 - - SDMMC1_D3 - - EVENTOUT
PC12 - TSC_G3_IO4 - - SDMMC1_CK - - EVENTOUT
PC13 - - - - - - - EVENTOUT
PC14 - - - - - - - EVENTOUT
PC15 - - - - - - - EVENTOUT

STM32L452xx
 Table 18. Alternate function AF8 to AF15(1) (continued)

STM32L452xx
AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port UART4/ SDMMC1/

CAN1/USB/ TIM2/TIM15/
LPUART1/ CAN1/TSC - COMP1/ SAI1 EVENTOUT
QUADSPI TIM16/LPTIM2
CAN1 COMP2

PD0 - CAN1_RX - - - - - EVENTOUT

PD1 - CAN1_TX - - - - - EVENTOUT
SDMMC1_
PD2 - TSC_SYNC - - - - EVENTOUT
CMD
QUADSPI_
PD3 - - - - - - EVENTOUT
BK2_NCS
QUADSPI_
PD4 - - - - - - EVENTOUT
BK2_IO0
QUADSPI_
DS11912 Rev 7

PD5 - - - - - - EVENTOUT
BK2_IO1
QUADSPI_
PD6 - - - - SAI1_SD_A - EVENTOUT
Port D BK2_IO2
QUADSPI_
PD7 - - - - - - EVENTOUT
BK2_IO3
PD8 - - - - - - - EVENTOUT
PD9 - - - - - - - EVENTOUT
PD10 - TSC_G6_IO1 - - - - - EVENTOUT

Pinouts and pin description

PD11 - TSC_G6_IO2 - - - - LPTIM2_ETR EVENTOUT
PD12 - TSC_G6_IO3 - - - - LPTIM2_IN1 EVENTOUT
PD13 - TSC_G6_IO4 - - - - LPTIM2_OUT EVENTOUT
PD14 - - - - - - - EVENTOUT
PD15 - - - - - - - EVENTOUT
85/221
 Table 18. Alternate function AF8 to AF15(1) (continued)
86/221

Pinouts and pin description

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

Port UART4/ SDMMC1/

CAN1/USB/ TIM2/TIM15/
LPUART1/ CAN1/TSC - COMP1/ SAI1 EVENTOUT
QUADSPI TIM16/LPTIM2
CAN1 COMP2

PE0 - - - - - - TIM16_CH1 EVENTOUT

PE1 - - - - - - - EVENTOUT
PE2 - TSC_G7_IO1 - - - SAI1_MCLK_A - EVENTOUT
PE3 - TSC_G7_IO2 - - - SAI1_SD_B - EVENTOUT
PE4 - TSC_G7_IO3 - - - SAI1_FS_A - EVENTOUT
PE5 - TSC_G7_IO4 - - - SAI1_SCK_A - EVENTOUT
PE6 - - - - - SAI1_SD_A - EVENTOUT
PE7 - - - - - SAI1_SD_B - EVENTOUT
DS11912 Rev 7

PE8 - - - - - SAI1_SCK_B - EVENTOUT

Port E PE9 - - - - - SAI1_FS_B - EVENTOUT

PE10 - TSC_G5_IO1 QUADSPI_CLK - - SAI1_MCLK_B - EVENTOUT
QUADSPI_
PE11 - TSC_G5_IO2 - - - - EVENTOUT
BK1_NCS
QUADSPI_
PE12 - TSC_G5_IO3 - - - - EVENTOUT
BK1_IO0
QUADSPI_
PE13 - TSC_G5_IO4 - - - - EVENTOUT
BK1_IO1
QUADSPI_
PE14 - - - - - - EVENTOUT
BK1_IO2
QUADSPI_
PE15 - - - - - - EVENTOUT
BK1_IO3

STM32L452xx
PH0 - - - - - - - EVENTOUT
Port H PH1 - - - - - - - EVENTOUT
PH3 - - - - - - - EVENTOUT
STM32L452xx Pinouts and pin description
1. Refer to Table 17 for AF0 to AF7.
DS11912 Rev 7 87/221
Memory mapping STM32L452xx

5 Memory mapping

Figure 15. STM32L452xx memory map

0xFFFF FFFF 0xBFFF FFFF

Cortex™-M4 Reserved
0xA000 1400
with FPU
7 QUADSPI registers
Internal
Peripherals 0xA000 1000

0xE000 0000
0x5FFF FFFF
Reserved
6
0x5006 0C00
AHB2
0x4800 0000
0xC000 0000 Reserved
0x4002 4400
QUADSPI AHB1
registers
5 0x4002 0000
Reserved
0xA000 1000
0x4001 5800
0xA000 0000 APB2
QUADSPI Flash 0x4001 0000
bank Reserved
0x4000 9800
4 0x9000 0000
APB1
0x4000 0000

0x8000 0000 0x1FFF FFFF

3
Reserved

0x6000 0000

0x1FFF 7810
Options Bytes
2
0x1FFF 7800
Reserved
0x1FFF 7400
Peripherals OTP area
0x4000 0000
0x1FFF 7000
System memory
1 0x2002 7FFF 0x1FFF 0000
SRAM2 Reserved
0x2002 0000
0x1000 8000
SRAM1
0x2000 0000 SRAM2
0x1000 0000
Reserved
0 0x0808 0000
CODE
Flash memory
0x0800 0000
Reserved
0x0000 0000
0x0008 0000 Flash, system memory
or SRAM, depending on
0x0000 0000 BOOT configuration
Reserved

MSv40981V3

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Table 19. STM32L452xx memory map and peripheral register boundary addresses(1)

Bus Boundary address Size(bytes) Peripheral

0x5006 0800 - 0x5006 0BFF 1 KB RNG

0x5004 0400 - 0x5006 07FF 158 KB Reserved
0x5004 0000 - 0x5004 03FF 1 KB ADC
0x5000 0000 - 0x5003 FFFF 16 KB Reserved
0x4800 2000 - 0x4FFF FFFF ~127 MB Reserved
0x4800 1C00 - 0x4800 1FFF 1 KB GPIOH
AHB2
0x4800 1400 - 0x4800 1BFF 2 KB Reserved
0x4800 1000 - 0x4800 13FF 1 KB GPIOE
0x4800 0C00 - 0x4800 0FFF 1 KB GPIOD
0x4800 0800 - 0x4800 0BFF 1 KB GPIOC
0x4800 0400 - 0x4800 07FF 1 KB GPIOB
0x4800 0000 - 0x4800 03FF 1 KB GPIOA
- 0x4002 4400 - 0x47FF FFFF ~127 MB Reserved
0x4002 4000 - 0x4002 43FF 1 KB TSC
0x4002 3400 - 0x4002 3FFF 1 KB Reserved
0x4002 3000 - 0x4002 33FF 1 KB CRC
0x4002 2400 - 0x4002 2FFF 3 KB Reserved
0x4002 2000 - 0x4002 23FF 1 KB FLASH registers
AHB1
0x4002 1400 - 0x4002 1FFF 3 KB Reserved
0x4002 1000 - 0x4002 13FF 1 KB RCC
0x4002 0800 - 0x4002 0FFF 2 KB Reserved
0x4002 0400 - 0x4002 07FF 1 KB DMA2
0x4002 0000 - 0x4002 03FF 1 KB DMA1
0x4001 6400 - 0x4001 FFFF 39 KB Reserved
0x4001 6000 - 0x4000 63FF 1 KB DFSDM1
0x4001 5800 - 0x4001 5FFF 2 KB Reserved
0x4001 5400 - 0x4000 57FF 1 KB SAI1
0x4001 4800 - 0x4000 53FF 3 KB Reserved
APB2 0x4001 4400 - 0x4001 47FF 1 KB TIM16
0x4001 4000 - 0x4001 43FF 1 KB TIM15
0x4001 3C00 - 0x4001 3FFF 1 KB Reserved
0x4001 3800 - 0x4001 3BFF 1 KB USART1
0x4001 3400 - 0x4001 37FF 1 KB Reserved
0x4001 3000 - 0x4001 33FF 1 KB SPI1

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Table 19. STM32L452xx memory map and peripheral register boundary addresses(1)
(continued)
Bus Boundary address Size(bytes) Peripheral

0x4001 2C00 - 0x4001 2FFF 1 KB TIM1

0x4001 2800 - 0x4001 2BFF 1 KB SDMMC1
0x4001 2000 - 0x4001 27FF 2 KB Reserved
0x4001 1C00 - 0x4001 1FFF 1 KB FIREWALL
APB2 0x4001 0800- 0x4001 1BFF 5 KB Reserved
0x4001 0400 - 0x4001 07FF 1 KB EXTI
0x4001 0200 - 0x4001 03FF COMP
0x4001 0030 - 0x4001 01FF 1 KB VREFBUF
0x4001 0000 - 0x4001 002F SYSCFG
0x4000 9800 - 0x4000 FFFF 26 KB Reserved
0x4000 9400 - 0x4000 97FF 1 KB LPTIM2
0x4000 8800 - 0x4000 93FF 3 KB Reserved
0x4000 8400 - 0x4000 87FF 1 KB I2C4
0x4000 8000 - 0x4000 83FF 1 KB LPUART1
0x4000 7C00 - 0x4000 7FFF 1 KB LPTIM1
0x4000 7800 - 0x4000 7BFF 1 KB OPAMP
0x4000 7400 - 0x4000 77FF 1 KB DAC1
0x4000 7000 - 0x4000 73FF 1 KB PWR
0x4000 6C00 - 0x4000 6FFF 1 KB USB SRAM
0x4000 6800 - 0x4000 6BFF 1 KB USB FS
0x4000 6400 - 0x4000 67FF 1 KB CAN1
APB1
0x4000 6000 - 0x4000 63FF 1 KB CRS
0x4000 5C00- 0x4000 5FFF 1 KB I2C3
0x4000 5800 - 0x4000 5BFF 1 KB I2C2
0x4000 5400 - 0x4000 57FF 1 KB I2C1
0x4000 5000 - 0x4000 53FF 1 KB Reserved
0x4000 4C00 - 0x4000 4FFF 1 KB UART4
0x4000 4800 - 0x4000 4BFF 1 KB USART3
0x4000 4400 - 0x4000 47FF 1 KB USART2
0x4000 4000 - 0x4000 43FF 1 KB Reserved
0x4000 3C00 - 0x4000 3FFF 1 KB SPI3
0x4000 3800 - 0x4000 3BFF 1 KB SPI2
0x4000 3400 - 0x4000 37FF 1 KB Reserved

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Table 19. STM32L452xx memory map and peripheral register boundary addresses(1)
(continued)
Bus Boundary address Size(bytes) Peripheral

0x4000 3000 - 0x4000 33FF 1 KB IWDG

0x4000 2C00 - 0x4000 2FFF 1 KB WWDG
0x4000 2800 - 0x4000 2BFF 1 KB RTC
0x4000 1400 - 0x4000 27FF 5 KB Reserved
APB1
0x4000 1000 - 0x4000 13FF 1 KB TIM6
0x4000 0800- 0x4000 0FFF 2 KB Reserved
0x4000 0400 - 0x4000 07FF 1 KB TIM3
0x4000 0000 - 0x4000 03FF 1 KB TIM2
1. The gray color is used for reserved boundary addresses.

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Electrical characteristics STM32L452xx

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3 V. They
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2σ).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 16.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 17.

Figure 16. Pin loading conditions Figure 17. Pin input voltage

MCU pin MCU pin

C = 50 pF VIN

MS19210V1 MS19211V1

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6.1.6 Power supply scheme

Figure 18. Power supply scheme

VBAT

Backup circuitry
1.55 – 3.6 V (LSE, RTC,
Backup registers)
Power switch

VDD VCORE
n x VDD
Regulator

VDDIO1
OUT

Level shifter
Kernel logic
n x 100 nF IO (CPU, Digital
GPIOs logic
+1 x 4.7 μF IN & Memories)

n x VSS

VDDA
VDDA
VREF ADC/
10 nF VREF+ DAC/
+1 μF OPAMP/
100 nF +1 μF VREF-
COMPs/
VREFBUF
VSSA
MSv43827V2

Caution: Each power supply pair (such as VDD/VSS, VDDA/VSSA) must be decoupled with filtering
ceramic capacitors as shown above. These capacitors must be placed as close as possible
to, or below, the appropriate pins on the underside of the PCB to ensure the good
functionality of the device.

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Electrical characteristics STM32L452xx

6.1.7 Current consumption measurement

Figure 19. Current consumption measurement scheme with and without external
SMPS power supply
IDD_USB
VDDUSB
IDD_USB
VDDUSB

IDD_VBAT
VBAT
IDD_VBAT
VBAT

IDD
VDD12
SMPS
IDD
VDD VDD

IDDA IDDA
VDDA VDDA

MSv45729V1

The IDD_ALL parameters given in Table 27 to Table 49 represent the total MCU consumption
including the current supplying VDD, VDDA, VDDUSB and VBAT.

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 20: Voltage characteristics,
Table 21: Current characteristics and Table 22: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability. Exposure to maximum rating conditions for
extended periods may affect device reliability. Device mission profile (application conditions)
is compliant with JEDEC JESD47 qualification standard, extended mission profiles are
available on demand.

Table 20. Voltage characteristics(1)

Symbol Ratings Min Max Unit

External main supply voltage (including

VDDX - VSS -0.3 4.0 V
VDD, VDDA, VDDUSB, VBAT)
VDD12 - VSS External SMPS supply voltage -0.3 1.32 V
min (VDD, VDDA, VDDUSB)
Input voltage on FT_xxx pins VSS-0.3
+ 4.0(3)(4)
VIN(2) V
Input voltage on TT_xx pins VSS-0.3 4.0
Input voltage on any other pins VSS-0.3 4.0

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Table 20. Voltage characteristics(1) (continued)

Symbol Ratings Min Max Unit

Variations between different VDDX power

|ΔVDDx| - 50 mV
pins of the same domain
Variations between all the different ground
|VSSx-VSS| - 50 mV
pins(5)
1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table 21: Current characteristics for the maximum allowed injected
current values.
3. This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.
4. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
5. Include VREF- pin.

Table 21. Current characteristics

Symbol Ratings Max Unit

∑IVDD Total current into sum of all VDD power lines (source)(1)(2) 140
∑IVSS Total current out of sum of all VSS ground lines (sink) (1)
140
IVDD(PIN) Maximum current into each VDD power pin (source)(1) 100
IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) 100
Output current sunk by any I/O and control pin except FT_f 20
IIO(PIN) Output current sunk by any FT_f pin 20
Output current sourced by any I/O and control pin 20 mA

Total output current sunk by sum of all I/Os and control pins(3) 100
∑IIO(PIN)
(3)
Total output current sourced by sum of all I/Os and control pins 100
Injected current on FT_xxx, TT_xx, RST and B pins, except PA4,
-5/+0(5)
IINJ(PIN)(4) PA5
Injected current on PA4, PA5 -5/0
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(6) 25
1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power
supplies, in the permitted range.
2. Valid also for VDD12 on SMPS packages.
3. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
4. Positive injection (when VIN > VDDIOx) is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
5. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 20: Voltage
characteristics for the maximum allowed input voltage values.
6. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).

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Electrical characteristics STM32L452xx

Table 22. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150 °C

TJ Maximum junction temperature 150 °C

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STM32L452xx Electrical characteristics

6.3 Operating conditions

6.3.1 General operating conditions

Table 23. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 80

fPCLK1 Internal APB1 clock frequency - 0 80 MHz
fPCLK2 Internal APB2 clock frequency - 0 80
1.71
VDD Standard operating voltage - (1) 3.6 V

Full frequency range 1.08

VDD12 Standard operating voltage 1.32 V
Up to 26 MHz 1.05
ADC or COMP used 1.62
DAC or OPAMP used 1.8
VDDA Analog supply voltage VREFBUF used 2.4 3.6 V

ADC, DAC, OPAMP, COMP,

0
VREFBUF not used
VBAT Backup operating voltage - 1.55 3.6 V
USB used 3.0 3.6
VDDUSB USB supply voltage V
USB not used 0 3.6
TT_xx I/O -0.3 VDDIOx+0.3

VIN I/O input voltage Min(Min(VDD, VDDA, V

All I/O except TT_xx -0.3 VDDUSB)+3.6 V,
5.5 V)(2)(3)
LQFP100 - 357
UFBGA100 - 267
LQFP64 - 345
Power dissipation at
PD UFBGA64 - 308 mW
TA = 85 °C for suffix 6
WLCSP64 - 377
LQFP48 - 346
UFQFPN48 - 690
LQFP100 - 89
UFBGA100 - 67
LQFP64 - 86
Power dissipation at
PD UFBGA64 - 77 mW
TA = 125 °C for suffix 3(4)
WLCSP64 - 94
LQFP48 - 86
UFQFPN48 - 172

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Electrical characteristics STM32L452xx

Table 23. General operating conditions (continued)

Symbol Parameter Conditions Min Max Unit

Ambient temperature for the Maximum power dissipation –40 85

suffix 6 version Low-power dissipation(5) –40 105
TA °C
Ambient temperature for the Maximum power dissipation –40 125
suffix 3 version Low-power dissipation(5) –40 130
Suffix 6 version –40 105
TJ Junction temperature range °C
Suffix 3 version –40 130
1. When RESET is released functionality is guaranteed down to VBOR0 Min.
2. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.
Maximum I/O input voltage is the smallest value between Min(VDD, VDDA, VDDUSB)+3.6 V and 5.5V.
3. For operation with voltage higher than Min (VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must
be disabled.
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.8: Thermal characteristics).
5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.8:
Thermal characteristics).

6.3.2 Operating conditions at power-up / power-down

The parameters given in Table 24 are derived from tests performed under the ambient
temperature condition summarized in Table 23.

Table 24. Operating conditions at power-up / power-down

Symbol Parameter Conditions Min Max Unit

VDD rise time rate 0 ∞

tVDD - µs/V
VDD fall time rate 10 ∞
VDDA rise time rate 0 ∞
tVDDA - µs/V
VDDA fall time rate 10 ∞
VDDUSB rise time rate 0 ∞
tVDDUSB - µs/V
VDDUSB fall time rate 10 ∞

The requirements for power-up/down sequence specified in Section 3.9.1: Power supply
schemes must be respected.

6.3.3 Embedded reset and power control block characteristics

The parameters given in Table 25 are derived from tests performed under the ambient
temperature conditions summarized in Table 23: General operating conditions.

Table 25. Embedded reset and power control block characteristics

Symbol Parameter Conditions(1) Min Typ Max Unit

Reset temporization after

tRSTTEMPO(2) VDD rising - 250 400 μs
BOR0 is detected

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Table 25. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions(1) Min Typ Max Unit

Rising edge 1.62 1.66 1.7

VBOR0(2) Brown-out reset threshold 0 V
Falling edge 1.6 1.64 1.69
Rising edge 2.06 2.1 2.14
VBOR1 Brown-out reset threshold 1 V
Falling edge 1.96 2 2.04
Rising edge 2.26 2.31 2.35
VBOR2 Brown-out reset threshold 2 V
Falling edge 2.16 2.20 2.24
Rising edge 2.56 2.61 2.66
VBOR3 Brown-out reset threshold 3 V
Falling edge 2.47 2.52 2.57
Rising edge 2.85 2.90 2.95
VBOR4 Brown-out reset threshold 4 V
Falling edge 2.76 2.81 2.86

Programmable voltage Rising edge 2.1 2.15 2.19

VPVD0 V
detector threshold 0 Falling edge 2 2.05 2.1
Rising edge 2.26 2.31 2.36
VPVD1 PVD threshold 1 V
Falling edge 2.15 2.20 2.25
Rising edge 2.41 2.46 2.51
VPVD2 PVD threshold 2 V
Falling edge 2.31 2.36 2.41
Rising edge 2.56 2.61 2.66
VPVD3 PVD threshold 3 V
Falling edge 2.47 2.52 2.57
Rising edge 2.69 2.74 2.79
VPVD4 PVD threshold 4 V
Falling edge 2.59 2.64 2.69
Rising edge 2.85 2.91 2.96
VPVD5 PVD threshold 5 V
Falling edge 2.75 2.81 2.86
Rising edge 2.92 2.98 3.04
VPVD6 PVD threshold 6 V
Falling edge 2.84 2.90 2.96
Hysteresis in
continuous - 20 -
Vhyst_BORH0 Hysteresis voltage of BORH0 mode mV
Hysteresis in
- 30 -
other mode
Hysteresis voltage of BORH
Vhyst_BOR_PVD - - 100 - mV
(except BORH0) and PVD
IDD BOR(3) (except BOR0) and
(2) - - 1.1 1.6 µA
(BOR_PVD) PVD consumption from VDD
VDDUSB peripheral voltage
VPVM1 - 1.18 1.22 1.26 V
monitoring

VDDA peripheral voltage Rising edge 1.61 1.65 1.69

VPVM3 V
monitoring Falling edge 1.6 1.64 1.68

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Electrical characteristics STM32L452xx

Table 25. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions(1) Min Typ Max Unit

VDDA peripheral voltage Rising edge 1.78 1.82 1.86

VPVM4 V
monitoring Falling edge 1.77 1.81 1.85
Vhyst_PVM3 PVM3 hysteresis - - 10 - mV
Vhyst_PVM4 PVM4 hysteresis - - 10 - mV
IDD (PVM1)
(2) PVM1 consumption from VDD - - 0.2 - µA

IDD
PVM3 and PVM4
(PVM3/PVM4) - - 2 - µA
(2) consumption from VDD

1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.

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STM32L452xx Electrical characteristics

6.3.4 Embedded voltage reference

The parameters given in Table 26 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 23: General operating
conditions.

Table 26. Embedded internal voltage reference

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage –40 °C < TA < +130 °C 1.182 1.212 1.232 V
ADC sampling time when
tS_vrefint (1) reading the internal reference - 4(2) - - µs
voltage
Start time of reference voltage
tstart_vrefint - - 8 12(2) µs
buffer when ADC is enable
VREFINT buffer consumption
from VDD when converted by - - 12.5 20(2) µA
IDD(VREFINTBUF)
ADC
Internal reference voltage
∆VREFINT spread over the temperature VDD = 3 V - 5 7.5(2) mV
range
TCoeff Temperature coefficient –40°C < TA < +130°C - 30 50(2) ppm/°C
ACoeff Long term stability 1000 hours, T = 25°C - 300 1000(2) ppm
VDDCoeff Voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.

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Electrical characteristics STM32L452xx

Figure 20. VREFINT versus temperature

V
1.235

1.23

1.225

1.22

1.215

1.21

1.205

1.2

1.195

1.19

1.185
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max
MSv40169V1

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6.3.5 Supply current characteristics

The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 19: Current consumption
measurement scheme with and without external SMPS power supply.

Typical and maximum current consumption

The MCU is placed under the following conditions:
• All I/O pins are in analog input mode
• All peripherals are disabled except when explicitly mentioned
• The Flash memory access time is adjusted with the minimum wait states number,
depending on the fHCLK frequency (refer to the table “Number of wait states according
to CPU clock (HCLK) frequency” available in the RM0394 reference manual).
• When the peripherals are enabled fPCLK = fHCLK
The parameters given in Table 27 to Table 50 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Table 23: General
operating conditions.

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104/221

Electrical characteristics
Table 27. Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions TYP MAX(1)
Symbol Parameter Unit
- Voltage fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
scaling
26 MHz 2.35 2.40 2.50 2.65 3.00 2.65 2.75 2.90 3.20 3.75
16 MHz 1.50 1.55 1.65 1.80 2.15 1.70 1.75 1.95 2.20 2.80
8 MHz 0.815 0.845 0.940 1.10 1.45 0.95 1.00 1.15 1.45 2.00
Range 2 4 MHz 0.465 0.495 0.595 0.760 1.10 0.55 0.60 0.75 1.05 1.60
2 MHz 0.295 0.320 0.420 0.580 0.910 0.35 0.40 0.55 0.85 1.40
fHCLK = fHSE up to 1 MHz 0.205 0.235 0.330 0.495 0.825 0.25 0.30 0.45 0.75 1.30
48MHz included,
Supply 100 kHz 0.130 0.155 0.250 0.415 0.745 0.15 0.25 0.40 0.65 1.25
IDD_ALL bypass mode
current in mA
DS11912 Rev 7

(Run) PLL ON above 80 MHz 8.45 8.50 8.65 8.90 9.25 9.45 9.50 9.75 10.10 10.75
Run mode
48 MHz all
peripherals disable 72 MHz 7.65 7.70 7.85 8.05 8.45 8.50 8.60 8.80 9.15 9.85
64 MHz 6.80 6.85 7.00 7.20 7.60 7.60 7.70 7.90 8.25 8.90
Range 1 48 MHz 5.10 5.15 5.25 5.45 5.85 5.70 5.80 6.00 6.35 7.00
32 MHz 3.45 3.50 3.60 3.80 4.20 3.85 3.95 4.15 4.50 5.15
24 MHz 2.60 2.65 2.80 2.95 3.35 2.95 3.05 3.20 3.55 4.20
16 MHz 1.80 1.85 1.95 2.15 2.50 2.00 2.10 2.30 2.60 3.25
2 MHz 225 260 365 550 900 275 335 470 770 1400
Supply
IDD_ALL current in fHCLK = fMSI 1 MHz 130 160 270 450 800 170 225 375 670 1300
µA
(LPRun) Low-power all peripherals disable 400 kHz 73.0 99.5 205 385 735 105 165 325 600 1250
run mode
100 kHz 38.0 71.0 175 355 705 70 140 315 565 1200
1. Guaranteed by characterization results, unless otherwise specified.

STM32L452xx
 Table 28. Current consumption in Run modes, code with data processing running from Flash,

STM32L452xx
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.10 V)
Conditions(1) TYP
Symbol Parameter Unit
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C

80 MHz 3.04 3.06 3.11 3.20 3.33

72 MHz 2.75 2.77 2.82 2.89 3.04
64 MHz 2.44 2.46 2.52 2.59 2.73
48 MHz 1.83 1.85 1.89 1.96 2.10
32 MHz 1.24 1.26 1.29 1.37 1.51
fHCLK = fHSE up to 48MHz included, bypass mode 24 MHz 0.93 0.95 1.01 1.06 1.20
Supply current in Run
IDD_ALL(Run) PLL ON above mA
mode 16 MHz 0.65 0.67 0.70 0.77 0.90
48 MHz all peripherals disable
DS11912 Rev 7

8 MHz 0.35 0.36 0.41 0.47 0.63

4 MHz 0.20 0.21 0.26 0.33 0.47
2 MHz 0.13 0.14 0.18 0.25 0.39
1 MHz 0.09 0.10 0.14 0.21 0.36
100 kHz 0.06 0.07 0.11 0.18 0.32
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%,
VDD12 = 1.10 V

Electrical characteristics
105/221
 Table 29. Current consumption in Run and Low-power run modes, code with data processing
106/221

Electrical characteristics
running from Flash, ART disable
Conditions TYP MAX(1)
Symbol Parameter Unit
Voltage
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
scaling

26 MHz 2.75 2.80 2.90 3.10 3.40 3.15 3.25 3.40 3.70 4.30
16 MHz 1.95 2.00 2.10 2.25 2.60 2.25 2.30 2.50 2.75 3.35
8 MHz 1.10 1.15 1.25 1.40 1.75 1.25 1.35 1.50 1.75 2.35
Range 2 4 MHz 0.640 0.670 0.765 0.935 1.25 0.75 0.80 0.95 1.25 1.80
2 MHz 0.380 0.405 0.505 0.670 1.00 0.45 0.50 0.65 0.95 1.50
fHCLK = fHSE up to
48MHz included, 1 MHz 0.250 0.275 0.375 0.540 0.865 0.30 0.35 0.50 0.80 1.35
Supply
IDD_ALL bypass mode 100 kHz 0.135 0.160 0.255 0.420 0.750 0.15 0.25 0.40 0.65 1.25
current in mA
(Run) PLL ON above 80 MHz 8.85 8.90 9.05 9.30 9.70 10.0 10.5 10.5 11.0 11.5
Run mode
48 MHz all
72 MHz 8.00 8.05 8.20 8.40 8.85 9.05 9.15 9.35 9.70 10.5
peripherals disable
DS11912 Rev 7

64 MHz 7.90 7.95 8.10 8.35 8.75 8.95 9.10 9.35 9.70 10.5
Range 1 48 MHz 6.60 6.65 6.80 7.05 7.45 7.55 7.65 7.90 8.30 9.00
32 MHz 4.75 4.80 4.95 5.15 5.55 5.40 5.50 5.75 6.10 6.80
24 MHz 3.60 3.65 3.80 4.00 4.35 4.10 4.20 4.40 4.75 5.40
16 MHz 2.60 2.65 2.75 2.95 3.35 3.00 3.05 3.25 3.60 4.25
2 MHz 340 360 470 650 1000 400 455 575 880 1550
Supply
IDD_ALL current in fHCLK = fMSI 1 MHz 175 215 320 500 855 225 285 420 720 1350
µA
(LPRun) Low-power all peripherals disable 400 kHz 89.5 120 225 405 760 130 185 340 620 1250
run
100 kHz 42.5 75.5 180 360 715 75 145 320 575 1200
1. Guaranteed by characterization results, unless otherwise specified.

STM32L452xx
 Table 30. Current consumption in Run modes, code with data processing running from Flash,

STM32L452xx
ART disable and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP
Uni
Symbol Parameter
t
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C

80 MHz 3.18 3.20 3.25 3.34 3.49

72 MHz 2.88 2.89 2.95 3.02 3.18
64 MHz 2.84 2.86 2.91 3.00 3.15
48 MHz 2.37 2.39 2.44 2.53 2.68
32 MHz 1.71 1.73 1.78 1.85 2.00

Supply current in Run fHCLK = fHSE up to 48MHz included, bypass mode 24 MHz 1.29 1.31 1.37 1.44 1.56
IDD_ALL(Run) mA
mode PLL ON above 48 MHz all peripherals disable 16 MHz 0.93 0.95 0.99 1.06 1.20
8 MHz 0.47 0.50 0.54 0.60 0.75
DS11912 Rev 7

4 MHz 0.28 0.29 0.33 0.40 0.54

2 MHz 0.16 0.17 0.22 0.29 0.43
1 MHz 0.11 0.12 0.16 0.23 0.37
100 kHz 0.06 0.07 0.11 0.18 0.32
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%,
VDD12 = 1.10 V

Electrical characteristics
107/221
 Table 31. Current consumption in Run and Low-power run modes, code with data processing
108/221

Electrical characteristics
running from SRAM1
Conditions TYP MAX(1)
Symbol Parameter Unit
Voltage 105 125 105 125
- fHCLK 25 °C 55 °C 85 °C 25 °C 55 °C 85 °C
scaling °C °C °C °C

26 MHz 2.40 2.40 2.55 2.70 3.05 2.70 2.75 2.90 3.20 3.80
16 MHz 1.50 1.55 1.65 1.80 2.15 1.70 1.80 1.95 2.25 2.80
8 MHz 0.820 0.850 0.950 1.10 1.45 0.95 1.00 1.15 1.45 2.00
Range 2 4 MHz 0.470 0.500 0.600 0.765 1.10 0.55 0.60 0.75 1.05 1.60
2 MHz 0.295 0.325 0.420 0.585 0.915 0.35 0.40 0.55 0.85 1.40
fHCLK = fHSE up to
48MHz included, 1 MHz 0.210 0.235 0.330 0.495 0.825 0.25 0.30 0.45 0.75 1.30
Supply
IDD_ALL bypass mode 100 kHz 0.130 0.155 0.250 0.415 0.750 0.15 0.25 0.35 0.65 1.25
current in mA
(Run) PLL ON above 80 MHz 8.55 8.60 8.75 8.95 9.35 9.55 9.65 9.85 10.5 11.0
Run mode
48 MHz all
72 MHz 7.70 7.80 7.90 8.15 8.50 8.60 8.70 8.90 9.25 9.95
peripherals disable
DS11912 Rev 7

64 MHz 6.90 6.95 7.10 7.30 7.70 7.70 7.75 7.95 8.35 9.00
Range 1 48 MHz 5.15 5.20 5.30 5.55 5.90 5.75 5.85 6.05 6.40 7.05
32 MHz 3.45 3.50 3.65 3.85 4.25 3.90 4.00 4.20 4.50 5.15
24 MHz 2.65 2.70 2.80 3.00 3.40 3.00 3.05 3.25 3.55 4.20
16 MHz 1.80 1.85 1.95 2.15 2.55 2.05 2.10 2.30 2.60 3.25
2 MHz 220 255 360 540 895 270 330 460 760 1400
Supply
fHCLK = fMSI 1 MHz 120 155 260 440 795 165 215 370 660 1300
IDD_ALL current in
all peripherals disable µA
(LPRun) low-power 400 kHz 60.0 92.0 195 375 730 100 160 330 585 1250
FLASH in power-down
run mode
100 kHz 36.0 62.5 165 345 695 63.0 130 305 555 1200
1. Guaranteed by characterization results, unless otherwise specified.

STM32L452xx
 Table 32. Current consumption in Run, code with data processing running from

STM32L452xx
SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP
Symbol Parameter Unit
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C

80 MHz 3.10 3.12 3.14 3.18 3.24

72 MHz 2.80 2.81 2.84 2.87 2.94
64 MHz 2.50 2.51 2.53 2.57 2.63
48 MHz 1.87 1.88 1.90 1.93 2.00
32 MHz 1.26 1.27 1.29 1.32 1.38
fHCLK = fHSE up to 48MHz included, bypass mode 24 MHz 0.96 0.96 0.98 1.02 1.07
IDD_ALL(Run) Supply current in Run mode PLL ON above mA
48 MHz all peripherals disable 16 MHz 0.65 0.66 0.68 0.71 0.77
8 MHz 0.35 0.36 0.38 0.41 0.47
DS11912 Rev 7

4 MHz 0.20 0.21 0.22 0.25 0.31

2 MHz 0.13 0.13 0.15 0.18 0.24
1 MHz 0.09 0.09 0.11 0.14 0.20
100 kHz 0.05 0.06 0.07 0.10 0.16
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%,
VDD12 = 1.10 V

Electrical characteristics
109/221
Electrical characteristics STM32L452xx

Table 33. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions TYP TYP
Symbol Parameter Unit Unit
Voltage
- Code 25 °C 25 °C
scaling

Reduced code(1) 2.35 90

fHCLK = 26 MHz
Coremark 2.65 102

Range 2
Dhrystone 2.1 2.75 mA 106 µA/MHz
fHCLK = fHSE up
to 48 MHz Fibonacci 2.60 100
Supply included, bypass While(1) 2.35 90
IDD_ALL
current in mode PLL ON
(Run) Reduced code (1)
8.45 106
Run mode above 48 MHz fHCLK = 80 MHz
all peripherals Coremark 9.45 118
Range 1

disable
Dhrystone 2.1 9.85 mA 123 µA/MHz
Fibonacci 9.25 116
While(1) 8.45 106
(1)
Reduced code 225 113
Supply Coremark 260 130
IDD_ALL current in fHCLK = fMSI = 2 MHz
Dhrystone 2.1 270 µA 135 µA/MHz
(LPRun) Low-power all peripherals disable
run Fibonacci 245 123
While(1) 285 143
1. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

Table 34. Typical current consumption in Run, with different codes running from Flash,
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.10 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
Reduced code(2) 1.01 39
fHCLK = 26 MHz

Coremark 1.14 44
Dhrystone 2.1 1.19 46
fHCLK = fHSE up to
48 MHz included, Fibonacci 1.12 43
Supply bypass mode PLL While(1) 1.01 39
IDD_ALL
current in ON above mA µA/MHz
(Run) Reduced code(2) 3.04 38
Run mode 48 MHz
fHCLK = 80 MHz

all peripherals Coremark 3.40 42

disable Dhrystone 2.1 3.54 44
Fibonacci 3.33 42
While(1) 3.04 38

110/221 DS11912 Rev 7

STM32L452xx Electrical characteristics

1. All values are obtained by calculation based on measurements done without SMPS and using following parameters:
SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

Table 35. Typical current consumption in Run, with different codes running from Flash,
ART enable (Cache ON Prefetch OFF) and power supplied by external SMPS
(VDD12 = 1.05 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
fHCLK = fHSE up to Reduced code(2) 0.92 36

fHCLK = 26 MHz
48 MHz included, Coremark 1.04 40
Supply bypass mode PLL
IDD_ALL Dhrystone 2.1 1.08 42
current in ON above mA µA/MHz
(Run)
Run mode 48 MHz Fibonacci 1.02 39
all peripherals
disable While(1) 0.92 36

1. All values are obtained by calculation based on measurements done without SMPS and using following parameters:
SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.05 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

DS11912 Rev 7 111/221

192
Electrical characteristics STM32L452xx

Table 36. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART disable
Conditions TYP TYP
Symbol Parameter Unit Unit
Voltage
- Code 25 °C 25 °C
scaling

Reduced code(1) 2.75 106

fHCLK = 80 MHz fHCLK = 26 MHz

Coremark 2.50 96

Range 2
fHCLK = fHSE up to Dhrystone 2.1 2.50 mA 96 µA/MHz
48 MHz included, Fibonacci 2.30 88
Supply bypass mode
IDD_ALL While(1) 2.20 84.6
current in PLL ON above
(Run) Reduced code(1) 8.85 111
Run mode 48 MHz
all peripherals Range 1 Coremark 8.15 102
disable Dhrystone 2.1 8.15 mA 102 µA/MHz
Fibonacci 7.55 94
While(1) 7.95 99
Reduced code(1) 340 170
Supply Coremark 380 190
IDD_ALL current in fHCLK = fMSI = 2 MHz
Dhrystone 2.1 355 µA 178 µA/MHz
(LPRun) Low-power all peripherals disable
run Fibonacci 355 178
While(1) 405 203
1. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

Table 37. Typical current consumption in Run modes, with different codes running from
Flash, ART disable and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
Reduced code(2) 1.19 46
fHCLK = 80 MHz fHCLK = 26 MHz

Coremark 1.08 41
fHCLK = fHSE up to Dhrystone 2.1 1.08 41
48 MHz included, Fibonacci 0.99 38
Supply bypass mode While(1) 0.95 37
IDD_ALL
current in PLL ON above mA µA/MHz
(Run) Reduced code(2) 3.18 40
Run mode 48 MHz
all peripherals Coremark 2.93 37
disable Dhrystone 2.1 2.93 37
Fibonacci 2.71 34
While(1) 2.86 36
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS
input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

112/221 DS11912 Rev 7

STM32L452xx Electrical characteristics

Table 38. Typical current consumption in Run modes, with different codesrunning from
Flash, ART disable and power supplied by external SMPS (VDD12 = 1.05 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
fHCLK = fHSE up to Reduced code(2) 1.08 42

fHCLK = 26 MHz
48 MHz included, Coremark 0.98 38
Supply
IDD_ALL bypass mode
current in Dhrystone 2.1 0.98 mA 38 µA/MHz
(Run) PLL ON above
Run mode Fibonacci 0.90 35
48 MHz
all peripherals While(1) 0.86 33
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS
input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.05 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

Table 39. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1
Conditions TYP TYP
Symbol Parameter Unit Unit
Voltage
- Code 25 °C 25 °C
scaling

Reduced code(1) 2.40 92

fHCLK = 80 MHz fHCLK = 26 MHz

Coremark 2.20 85
Range 2

fHCLK = fHSE up to Dhrystone 2.1 2.35 mA 90 µA/MHz

48 MHz included, Fibonacci 2.20 85
Supply bypass mode
IDD_ALL While(1) 2.30 88
current in PLL ON above
(Run) Reduced code(1) 8.55 107
Run mode 48 MHz all
peripherals Coremark 7.75 97
Range 1

disable Dhrystone 2.1 8.45 mA 106 µA/MHz

Fibonacci 7.80 98
While(1) 8.75 109
Reduced code(1) 220 110
Supply Coremark 190 95
IDD_ALL current in fHCLK = fMSI = 2 MHz
Dhrystone 2.1 215 µA 108 µA/MHz
(LPRun) Low-power all peripherals disable
run Fibonacci 200 100
While(1) 210 105
1. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

DS11912 Rev 7 113/221

192
Electrical characteristics STM32L452xx

Table 40. Typical current consumption in Run, with different codesrunning from
SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
Reduced code(2) 1.04 40

fHCLK = 80 MHz fHCLK = 26 MHz

Coremark 0.95 37
Dhrystone 2.1 1.01 39
fHCLK = fHSE up to
48 MHz included, Fibonacci 0.95 37
Supply While(1) 0.99 38
IDD_ALL bypass mode
current in mA µA/MHz
(Run) PLL ON above Reduced code(2) 3.07 38
Run mode
48 MHz all
Coremark 2.79 35
peripherals disable
Dhrystone 2.1 3.04 38
Fibonacci 2.80 35
While(1) 3.15 39
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS
input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

Table 41. Typical current consumption in Run, with different codesrunning from
SRAM1 and power supplied by external SMPS (VDD12 = 1.05 V)
Conditions(1) TYP TYP
Symbol Parameter Voltage Unit Unit
- Code 25 °C 25 °C
scaling
fHCLK = fHSE up to Reduced code(2) 0.94 36
fHCLK = 26 MHz

48 MHz included, Coremark 0.86 33

Supply
IDD_ALL bypass mode
current in Dhrystone 2.1 0.92 mA 36 µA/MHz
(Run) PLL ON above
Run mode Fibonacci 0.86 33
48 MHz all
peripherals disable While(1) 0.90 35
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS
input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.05 V
2. Reduced code used for characterization results provided in Table 27, Table 29, Table 31.

114/221 DS11912 Rev 7

 STM32L452xx
Table 42. Current consumption in Sleep and Low-power sleep modes, Flash ON
Conditions TYP MAX(1)
Symbol Parameter Unit
Voltage
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
scaling

26 MHz 0.700 0.730 0.830 1.00 1.35 0.80 0.90 1.05 1.30 1.90
16 MHz 0.475 0.505 0.605 0.775 1.10 0.55 0.65 0.80 1.05 1.65
8 MHz 0.300 0.325 0.425 0.590 0.920 0.35 0.45 0.60 0.85 1.45
Range 2 4 MHz 0.210 0.235 0.335 0.500 0.830 0.25 0.30 0.45 0.75 1.35
fHCLK = fHSE up 2 MHz 0.165 0.190 0.290 0.455 0.785 0.20 0.25 0.40 0.70 1.25
to 48 MHz
Supply included, bypass 1 MHz 0.145 0.170 0.265 0.430 0.760 0.15 0.25 0.40 0.65 1.25
IDD_ALL current in mode 100 kHz 0.125 0.150 0.245 0.410 0.740 0.15 0.20 0.35 0.65 1.20
mA
(Sleep) sleep pll ON above 80 MHz 2.30 2.35 2.45 2.65 3.05 2.55 2.65 2.85 3.15 3.80
mode, 48 MHz all
72 MHz 2.10 2.15 2.25 2.45 2.80 2.35 2.40 2.60 2.90 3.55
peripherals
DS11912 Rev 7

disable 64 MHz 1.90 1.90 2.05 2.25 2.60 2.10 2.20 2.35 2.70 3.35
Range 1 48 MHz 1.40 1.40 1.55 1.75 2.15 1.60 1.65 1.85 2.15 2.80
32 MHz 0.970 1.00 1.15 1.30 1.70 1.10 1.20 1.40 1.70 2.35
24 MHz 0.765 0.800 0.920 1.10 1.50 0.90 0.95 1.15 1.45 2.10
16 MHz 0.555 0.590 0.705 0.895 1.25 0.65 0.75 0.90 1.20 1.85
Supply 2 MHz 76.0 110 215 395 745 120 185 355 610 1250
current in 1 MHz 54.0 86.5 195 370 725 88.5 160 335 585 1250
IDD_ALL f =f
low-power HCLK MSI µA
(LPSleep) all peripherals disable 400 kHz 39.0 70.5 175 355 710 68.5 140 320 570 1200
sleep
mode 100 kHz 35.5 75.0 195 345 715 66.0 130 305 560 1200

Electrical characteristics
1. Guaranteed by characterization results, unless otherwise specified.
115/221
 Table 43. Current consumption in Sleep, Flash ON and power supplied by external SMPS
116/221

Electrical characteristics
(VDD12 = 1.10 V)
Conditions(1) TYP
Symbol Parameter Unit
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C

80 MHz 0.83 0.84 0.88 0.95 1.10

72 MHz 0.75 0.77 0.81 0.88 1.01
64 MHz 0.68 0.68 0.74 0.81 0.93
48 MHz 0.50 0.50 0.56 0.63 0.77
fHCLK = fHSE up to 48 MHz included, bypass 32 MHz 0.35 0.36 0.41 0.47 0.61
mode 24 MHz 0.28 0.29 0.33 0.40 0.54
IDD_ALL(Sleep) Supply current in sleep mode, mA
pll ON above 16 MHz 0.20 0.21 0.25 0.32 0.45
48 MHz all peripherals disable
8 MHz 0.13 0.14 0.18 0.25 0.40
4 MHz 0.09 0.10 0.14 0.22 0.36
2 MHz 0.07 0.08 0.13 0.20 0.34
DS11912 Rev 7

1 MHz 0.06 0.07 0.11 0.19 0.33

100 kHz 0.05 0.06 0.11 0.18 0.32
1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%,
VDD12 = 1.10 V

Table 44. Current consumption in Low-power sleep modes, Flash in power-down

Conditions TYP MAX(1)
Symbol Parameter Unit
Voltage
- fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
scaling

2 MHz 76.5 105 220 410 740 110 175 350 600 1250
Supply current
IDD_ALL fHCLK = fMSI 1 MHz 54.0 81.0 195 385 715 81.5 155 325 570 1200
in low-power µA
(LPSleep) all peripherals disable 400 kHz 28.0 64.5 175 370 695 60.5 130 305 555 1200
sleep mode
100 kHz 21.5 55.0 170 360 690 58.5 120 300 550 1200

STM32L452xx
1. Guaranteed by characterization results, unless otherwise specified.
 Table 45. Current consumption in Stop 2 mode

STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 2.05 5.40 19.0 44.0 97.0 4.00 11.5 41.5 100 220
Supply current in 2.4 V 2.10 5.45 19.0 44.5 98.5 4.05 11.5 42.0 100 225
IDD_ALL
Stop 2 mode, - µA
(Stop 2) 3V 2.05 5.55 19.5 45.0 100 4.10 12.0 43.0 105 230
RTC disabled
3.6 V 2.05 5.65 20.0 46.5 105 4.20 12.0 44.0 105 235
1.8 V 2.30 5.65 19.0 44.0 97.0 4.50 12.0 42.0 100 220
2.4 V 2.35 5.80 19.5 44.5 99.0 4.65 12.0 42.5 100 225
RTC clocked by LSI
3V 2.50 5.90 20.0 45.5 100 4.90 12.5 43.5 105 230
3.6 V 2.60 6.15 20.5 47.0 105 5.20 13.0 44.5 105 235
1.8 V 2.60 6.05 21.0 48.0 97.0 - - - - -
IDD_ALL Supply current in 2.4 V 2.55 6.20 21.0 49.0 98.5 - - - - -
RTC clocked by LSE
(Stop 2 with Stop 2 mode, µA
bypassed at 32768 Hz 3V 2.80 6.35 21.5 49.5 100 - - - - -
RTC) RTC enabled
DS11912 Rev 7

3.6 V 2.85 6.60 22.5 51.5 105 - - - - -

1.8 V 2.40 5.70 19.0 44.5 98.0 - - - - -
RTC clocked by LSE 2.4 V 2.50 5.85 19.5 45.0 99.5 - - - - -
quartz(2)
in low drive mode 3V 2.60 6.00 20.0 46.0 100 - - - - -
3.6 V 2.65 6.25 20.5 47.0 105 - - - - -
Wakeup clock is
MSI = 48 MHz,
3V 1.85 - - - - - - - - -
voltage Range 1.
See (3).
Supply current Wakeup clock is
IDD_ALL
during wakeup MSI = 4 MHz,
(wakeup from 3V 1.50 - - - - - - - - - mA

Electrical characteristics
from Stop 2 voltage Range 2.
Stop 2)
mode See (3).
Wakeup clock is
HSI16 = 16 MHz,
3V 1.55 - - - - - - - - -
voltage Range 1.
See (3).
1. Guaranteed based on test during characterization, unless otherwise specified.
117/221

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
118/221

Electrical characteristics
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.
DS11912 Rev 7

STM32L452xx
 Table 46. Current consumption in Stop 1 mode

STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

Supply 1.8 V 9.85 29.0 100 225 430 17.0 49.5 185 395 850
IDD_ALL current in 2.4 V 9.85 29.5 100 225 435 17.0 49.5 185 395 850
- µA
(Stop 1) Stop 1 mode, 3V 9.90 29.5 100 225 435 17.5 50.0 185 400 850
RTC disabled
3.6 V 10.0 28.0 105 230 410 17.5 50.5 190 405 860
1.8 V 10.5 29.5 100 225 430 17.0 50.0 185 395 840
2.4 V 10.5 29.5 100 225 435 17.0 50.5 185 395 845
RTC clocked by LSI
3V 10.5 30.0 105 225 435 17.5 50.5 185 400 855
3.6 V 10.5 30.0 105 230 440 17.5 51.5 190 405 860

Supply 1.8 V 10.0 29.5 100 225 435 - - - - -

IDD_ALL 2.4 V 10.0 29.5 100 225 435 - - - - -
current in stop RTC clocked by LSE
(Stop 1 with µA
1 mode, bypassed, at 32768 Hz 3V 10.5 30.0 105 225 440 - - - - -
RTC)
DS11912 Rev 7

RTC enabled
3.6 V 11.0 30.5 105 230 440 - - - - -
1.8 V 10.0 29.0 99.5 220 435 - - - - -
RTC clocked by LSE quartz(2) 2.4 V 10.0 29.0 99.5 220 435 - - - - -
in low drive mode 3V 10.0 29.0 100 220 440 - - - - -
3.6 V 10.5 29.5 100 225 440 - - - - -
Wakeup clock MSI = 48 MHz,
voltage Range 1. 3V 1.15 - - - - - - - - -
See (3).
Supply
IDD_ALL Wakeup clock MSI = 4 MHz,
current during voltage Range 2.
(wakeup 3V 1.20 - - - - - - - - - mA
wakeup from
from Stop1) See (3).

Electrical characteristics
Stop 1
Wakeup clock HSI16 =
16 MHz, voltage Range 1. 3V 1.20 - - - - - - - - -
See (3).
1. Guaranteed based on test during characterization, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.
119/221
 Table 47. Current consumption in Stop 0
120/221

Electrical characteristics
Conditions TYP MAX(1)
Symbol Parameter Unit
VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 125 150 240 390 645 145 190 350 600 1150
Supply
IDD_ALL current in 2.4 V 125 150 240 390 645 150 195 355 605 1150
µA
(Stop 0) Stop 0 mode, 3V 125 150 245 395 650 155 195 360 610 1150
RTC disabled
3.6 V 125 155 245 400 655 155 200 365 615 1150(2)
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
DS11912 Rev 7

STM32L452xx
 Table 48. Current consumption in Standby mode

STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 100 270 1200 3300 8650 205 650 3250 9250 25000
2.4 V 110 305 1400 3850 10000 225 750 3750 11000 29000
Supply current no independent watchdog
3V 125 360 1650 4550 12000 290 950 4450 13000 33500
in Standby
IDD_ALL mode (backup 3.6 V 160 445 2000 5500 14500 355 1150 5250 15000 38500
nA
(Standby) registers 1.8 V 265 435 1350 3450 8700 - - - - -
retained),
with independent 2.4 V 335 540 1650 4100 10500 - - - - -
RTC disabled
watchdog 3V 420 655 1950 4850 12500 - - - - -
3.6 V 580 895 2450 5950 14500 - - - - -
1.8 V 345 505 1400 3450 8600 720 1150 3750 9550 25000
RTC clocked by LSI, no 2.4 V 420 620 1650 4050 10000 875 1450 4400 11500 29000
DS11912 Rev 7

independent watchdog 3V 510 745 2000 4750 12000 1070 1700 5100 13500 34000
3.6 V 635 915 2450 5900 14500 1320 2100 6000 15500 39000
nA
1.8 V 375 540 1450 3550 8800 - - - - -
RTC clocked by LSI, with 2.4 V 490 690 1800 4250 10500 - - - - -
Supply current independent watchdog 3V 620 860 2150 5100 12500 - - - - -
in Standby
IDD_ALL 3.6 V 845 1150 2700 6200 15000 - - - - -
mode (backup
(Standby
registers 1.8 V 395 - - - - - - - - -
with RTC)
retained),
RTC clocked by LSE 2.4 V 500 - - - - - - - - -
RTC enabled
bypassed at 32768Hz 3V 625 - - - - - - - - -
3.6 V 795 - - - - - - - - -

Electrical characteristics
nA
1.8 V 375 550 1500 3550 8800 - - - - -
RTC clocked by LSE 2.4 V 460 665 1750 4250 10500 - - - - -
quartz (2) in low drive mode 3 V 565 810 2100 5050 12500 - - - - -
3.6 V 720 1000 2600 5900 15000 - - - - -
121/221
 Table 48. Current consumption in Standby mode (continued)
122/221

Electrical characteristics
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
Supply current 1.8 V 250 730 2700 6350 13850 575 1800 6350 14500 32000
IDD_ALL to be added in 2.4 V 250 740 2700 6150 14000 620 1800 6450 14500 32000
Standby mode - nA
(SRAM2)(3) 3V 255 740 2700 6450 13500 645 1850 6500 15000 32500
when SRAM2
is retained 3.6 V 255 755 2800 6500 13500 790 1950 6500 15000 33000
IDD_ALL Supply current Wakeup clock is
(wakeup during wakeup MSI = 4 MHz. 3V 2.00 - - - - - - - - - mA
from from Standby
See (4).
Standby) mode
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD_ALL(Standby
+ RTC) + IDD_ALL(SRAM2).
DS11912 Rev 7

4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.

Table 49. Current consumption in Shutdown mode

Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
Supply current 1.8 V 19.0 120 720 2200 6400 38.0 350 2050 6350 19500
in Shutdown 2.4 V 26.0 145 855 2600 7450 62.0 400 2400 7450 22500
mode
IDD_ALL 3V 37.0 185 1050 3100 8700 105 500 2850 8750 26000
(backup - nA
(Shutdown)
registers
retained) RTC 3.6 V 67.0 260 1350 3950 11000 160 650 3500 10500 30000
disabled

STM32L452xx
 Table 49. Current consumption in Shutdown mode (continued)

STM32L452xx
Conditions TYP MAX(1)
Symbol Parameter Unit
- VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 165 275 950 2600 6550 - - - - -

Supply current RTC clocked by LSE 2.4 V 235 370 1150 3100 7650 - - - - -
in Shutdown bypassed at 32768 Hz 3V 325 485 1450 3750 9050 - - - - -
IDD_ALL mode 3.6 V 445 655 1900 4800 11500 - - - - -
(Shutdown (backup nA
with RTC) registers 1.8 V 290 410 1050 2550 6700 - - - - -
retained) RTC RTC clocked by LSE 2.4 V 375 515 1250 3050 7800 - - - - -
enabled quartz (2) in low drive
mode 3V 480 645 1550 3700 8800 - - - - -
3.6 V 625 840 1950 4950 11500 - - - - -
Supply current Wakeup clock is
IDD_ALL
during wakeup
(wakeup from MSI = 4 MHz. 3V 1.00 - - - - - - - - - mA
from Shutdown
Shutdown) See (3).
DS11912 Rev 7

mode
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 52: Low-power mode wakeup timings.

Table 50. Current consumption in VBAT mode

Conditions TYP MAX(1)
Symbol Parameter Unit
- VBAT 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C
1.8 V 3.00 - - - - - - - - -
2.4 V 4.00 - - - - - - - - -
RTC disabled

Electrical characteristics
3V 5.00 - - - - - - - - -
IDD_VBAT Backup domain 3.6 V 11.0 - - - - - - - - -
nA
(VBAT) supply current 1.8 V 145 165 285 550 - - - - - -
RTC enabled and 2.4 V 205 235 370 670 - - - - - -
clocked by LSE
bypassed at 32768 Hz 3V 285 315 470 820 - - - - - -
3.6 V 375 430 715 1350 - - - - - -
123/221

1. Guaranteed by characterization results, unless otherwise specified.

Electrical characteristics STM32L452xx

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 71: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 51: Peripheral current consumption), the I/Os used by an application also contribute
to the current consumption. When an I/O pin switches, it uses the current from the I/O
supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load
(internal or external) connected to the pin:

I SW = V DDIOx × f SW × C

where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDIOx is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.

124/221 DS11912 Rev 7

STM32L452xx Electrical characteristics

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in Table 51. The MCU is placed
under the following conditions:
• All I/O pins are in Analog mode
• The given value is calculated by measuring the difference of the current consumptions:
– when the peripheral is clocked on
– when the peripheral is clocked off
• Ambient operating temperature and supply voltage conditions summarized in Table 20:
Voltage characteristics
• The power consumption of the digital part of the on-chip peripherals is given in
Table 51. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.

Table 51. Peripheral current consumption

Low-power run
Peripheral Range 1 Range 2 Unit
and sleep

Bus Matrix(1) 3.2 2.9 3.1

ADC independent clock domain 0.4 0.1 0.2
ADC clock domain 2.1 1.9 1.9
CRC 0.4 0.2 0.3
DMA1 1.4 1.3 1.4
DMA2 1.5 1.3 1.4
FLASH 6.2 5.2 5.8
(2)
GPIOA 1.7 1.4 1.6
GPIOB(2)) 1.6 1.3 1.6
(2)
GPIOC 1.7 1.5 1.6
AHB
GPIOD(2) 1.8 1.6 1.7
(2)
GPIOE 1.7 1.6 1.6 µA/MHz
GPIOH(2) 0.6 0.6 0.5
QSPI 7.0 5.8 7.3
RNG independent clock domain 2.2 N/A N/A
RNG clock domain 0.5 N/A N/A
SRAM1 0.8 0.9 0.7
SRAM2 1.0 0.8 0.8
TSC 1.6 1.3 1.3
All AHB Peripherals 25.2 21.7 23.6
AHB to APB1 bridge(3) 0.9 0.7 0.9
APB1 CAN1 4.1 3.2 3.9
DAC1 2.4 1.8 2.2

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192
Electrical characteristics STM32L452xx

Table 51. Peripheral current consumption (continued)

Low-power run
Peripheral Range 1 Range 2 Unit
and sleep

RTCA 1.7 1.1 2.1

CRS 0.3 0.3 0.6
USB FS independent clock
2.9 N/A N/A
domain
USB FS clock domain 2.3 N/A N/A
I2C1 independent clock domain 3.5 2.8 3.4
I2C1 clock domain 1.1 0.9 1.0
I2C2 independent clock domain 3.5 3.0 3.4
I2C2 clock domain 1.1 0.7 0.9
I2C3 independent clock domain 2.9 2.3 2.5
I2C3 clock domain 0.9 0.4 0.8
LPUART1 independent clock
1.9 1.6 1.8
domain
LPUART1 clock domain 0.6 0.6 0.6
LPTIM1 independent clock
2.9 2.4 2.8
domain
LPTIM1 clock domain 0.8 0.4 0.7
APB1 µA/MHz
LPTIM2 independent clock
3.1 2.7 3.9
domain
LPTIM2 clock domain 0.8 0.7 0.8
OPAMP 0.4 0.2 0.4
PWR 0.4 0.1 0.4
SPI2 1.8 1.6 1.6
SPI3 1.7 1.3 1.6
TIM2 6.2 5.0 5.9
TIM6 1.0 0.6 0.9
USART2 independent clock
4.1 3.6 3.8
domain
USART2 clock domain 1.3 0.9 1.1
USART3 independent clock
4.3 3.5 4.2
domain
USART3 clock domain 1.5 1.1 1.3
WWDG 0.5 0.5 0.5
All APB1 on 51.5 35.5 48.6

126/221 DS11912 Rev 7

STM32L452xx Electrical characteristics

Table 51. Peripheral current consumption (continued)

Low-power run
Peripheral Range 1 Range 2 Unit
and sleep

AHB to APB2(4) 1.0 0.9 0.9

FW 0.2 0.2 0.2
SAI1 independent clock domain 2.3 1.8 1.9
SAI1 clock domain 2.1 1.8 2.0
SDMMC1 independent clock
4.7 3.9 3.9
domain
SDMMC1 clock domain 2.5 1.9 1.9
SPI1 1.8 1.6 1.7
APB2
SYSCFG/VREFBUF/COMP 0.6 0.5 0.6 µA/MHz
TIM1 8.1 6.5 7.6
TIM15 3.7 3.0 3.4
TIM16 2.7 2.1 2.6
USART1 independent clock
4.8 4.2 4.6
domain
USART1 clock domain 1.5 1.3 1.7
All APB2 on 24.2 19.9 22.6
ALL 100.9 77.1 94.8
1. The BusMatrix is automatically active when at least one master is ON (CPU, DMA).
2. The GPIOx (x= A…H) dynamic current consumption is approximately divided by a factor two versus this table values when
the GPIO port is locked thanks to LCKK and LCKy bits in the GPIOx_LCKR register. In order to save the full GPIOx current
consumption, the GPIOx clock should be disabled in the RCC when all port I/Os are used in alternate function or analog
mode (clock is only required to read or write into GPIO registers, and is not used in AF or analog modes).
3. The AHB to APB1 Bridge is automatically active when at least one peripheral is ON on the APB1.
4. The AHB to APB2 Bridge is automatically active when at least one peripheral is ON on the APB2.

6.3.6 Wakeup time from low-power modes and voltage scaling

transition times
The wakeup times given in Table 52 are the latency between the event and the execution of
the first user instruction.
The device goes in low-power mode after the WFE (Wait For Event) instruction.

Table 52. Low-power mode wakeup timings(1)

Symbol Parameter Conditions Typ Max Unit

Wakeup time from Sleep

tWUSLEEP - 6 6
mode to Run mode
Nb of
CPU
Wakeup time from Low- Wakeup in Flash with Flash in power-down cycles
tWULPSLEEP power sleep mode to Low- during low-power sleep mode (SLEEP_PD=1 6 9
power run mode in FLASH_ACR) and with clock MSI = 2 MHz

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192
Electrical characteristics STM32L452xx

Table 52. Low-power mode wakeup timings(1) (continued)

Symbol Parameter Conditions Typ Max Unit

Wakeup clock MSI = 48 MHz 3.34 4.3

Range 1
Wakeup clock HSI16 = 16 MHz 3.7 6.5
Wake up time from Stop 0
mode to Run mode in Wakeup clock MSI = 24 MHz 3.8 7.1
Flash
Range 2 Wakeup clock HSI16 = 16 MHz 3.7 6.5
Wakeup clock MSI = 4 MHz 9.3 7.1
tWUSTOP0 µs
Wakeup clock MSI = 48 MHz 1.85 2.7
Range 1
Wakeup clock HSI16 = 16 MHz 2.68 3
Wake up time from Stop 0
mode to Run mode in Wakeup clock MSI = 24 MHz 2.47 3.4
SRAM1
Range 2 Wakeup clock HSI16 = 16 MHz 2.68 3
Wakeup clock MSI = 4 MHz 9.67 12.5
Wakeup clock MSI = 48 MHz 6.75 7.6
Range 1
Wakeup clock HSI16 = 16 MHz 7.14 8
Wake up time from Stop 1
Wakeup clock MSI = 24 MHz 7 7.82
mode to Run in Flash
Range 2 Wakeup clock HSI16 = 16 MHz 7.14 7.9
Wakeup clock MSI = 4 MHz 10.44 11.9
Wakeup clock MSI = 48 MHz 5.21 5.9
Range 1
Wakeup clock HSI16 = 16 MHz 6.23 6.9
Wake up time from Stop 1
tWUSTOP1 mode to Run mode in Wakeup clock MSI = 24 MHz 5.73 6.4 µs
SRAM1
Range 2 Wakeup clock HSI16 = 16 MHz 6.23 6.9
Wakeup clock MSI = 4 MHz 10.9 12.3

Wake up time from Stop 1

mode to Low-power run 16.05 19.2
Regulator in
mode in Flash
low-power
Wakeup clock MSI = 2 MHz
mode (LPR=1
Wake up time from Stop 1
in PWR_CR1)
mode to Low-power run 17.06 20.3
mode in SRAM1

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STM32L452xx Electrical characteristics

Table 52. Low-power mode wakeup timings(1) (continued)

Symbol Parameter Conditions Typ Max Unit

Wakeup clock MSI = 48 MHz 7.93 9.1

Range 1
Wakeup clock HSI16 = 16 MHz 7.32 8.5
Wake up time from Stop 2
mode to Run mode in Wakeup clock MSI = 24 MHz 8.25 9.4
Flash
Range 2 Wakeup clock HSI16 = 16 MHz 7.32 8.4
Wakeup clock MSI = 4 MHz 11.43 13.3
tWUSTOP2 µs
Wakeup clock MSI = 48 MHz 5.23 6
Range 1
Wakeup clock HSI16 = 16 MHz 6.33 7.1
Wake up time from Stop 2
mode to Run mode in Wakeup clock MSI = 24 MHz 5.78 6.5
SRAM1
Range 2 Wakeup clock HSI16 = 16 MHz 6.33 7.1
Wakeup clock MSI = 4 MHz 11.37 12.9

Wakeup time from Standby Wakeup clock MSI = 8 MHz 16.13 18.2
tWUSTBY Range 1 µs
mode to Run mode Wakeup clock MSI = 4 MHz 24.06 26.6

tWUSTBY Wakeup time from Standby Wakeup clock MSI = 8 MHz 16.09 18.2
Range 1 µs
SRAM2 with SRAM2 to Run mode Wakeup clock MSI = 4 MHz 24 26.6
Wakeup time from
tWUSHDN Shutdown mode to Run Range 1 Wakeup clock MSI = 4 MHz 255.38 316.41 µs
mode
1. Guaranteed by characterization results.

Table 53. Regulator modes transition times(1)

Symbol Parameter Conditions Typ Max Unit

Wakeup time from Low-power run mode to

tWULPRUN Code run with MSI 2 MHz 5 7
Run mode(2)
µs
Regulator transition time from Range 2 to
tVOST Code run with MSI 24 MHz 20 40
Range 1 or Range 1 to Range 2(3)
1. Guaranteed by characterization results.
2. Time until REGLPF flag is cleared in PWR_SR2.
3. Time until VOSF flag is cleared in PWR_SR2.

Table 54. Wakeup time using USART/LPUART(1)

Symbol Parameter Conditions Typ Max Unit

Wakeup time needed to calculate the Stop 0 mode - 1.7

tWUUSART maximum USART/LPUART baudrate
permitting to wakeup up from stop mode Stop 1 mode and Stop 2 µs
tWULPUART - 8.5
when USART/LPUART clock source is mode
HSI16
1. Guaranteed by design.

DS11912 Rev 7 129/221

192
Electrical characteristics STM32L452xx

6.3.7 External clock source characteristics

High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 21: High-speed external clock
source AC timing diagram.

Table 55. High-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Voltage scaling
- 8 48
Range 1
fHSE_ext User external clock source frequency MHz
Voltage scaling
- 8 26
Range 2
VHSEH OSC_IN input pin high level voltage - 0.7 VDDIOx - VDDIOx
V
VHSEL OSC_IN input pin low level voltage - VSS - 0.3 VDDIOx
Voltage scaling
7 - -
tw(HSEH) Range 1
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
Range 2
1. Guaranteed by design.

Figure 21. High-speed external clock source AC timing diagram

tw(HSEH)

VHSEH
90%
10%
VHSEL

tr(HSE) t
tf(HSE) tw(HSEL)
THSE

MS19214V2

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STM32L452xx Electrical characteristics

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 22.

Table 56. Low-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fLSE_ext User external clock source frequency - - 32.768 1000 kHz

VLSEH OSC32_IN input pin high level voltage - 0.7 VDDIOx - VDDIOx
V
VLSEL OSC32_IN input pin low level voltage - VSS - 0.3 VDDIOx
tw(LSEH)
OSC32_IN high or low time - 250 - - ns
tw(LSEL)
1. Guaranteed by design.

Figure 22. Low-speed external clock source AC timing diagram

tw(LSEH)

VLSEH
90%
10%
VLSEL

tr(LSE) t
tf(LSE) tw(LSEL)
TLSE

MS19215V2

DS11912 Rev 7 131/221

192
Electrical characteristics STM32L452xx

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 57. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).

Table 57. HSE oscillator characteristics(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 8 48 MHz

RF Feedback resistor - - 200 - kΩ
(3)
During startup - - 5.5
VDD = 3 V,
Rm = 30 Ω, - 0.44 -
CL = 10 pF@8 MHz
VDD = 3 V,
Rm = 45 Ω, - 0.45 -
CL = 10 pF@8 MHz

IDD(HSE) HSE current consumption VDD = 3 V, mA

Rm = 30 Ω, - 0.68 -
CL = 5 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 0.94 -
CL = 10 pF@48 MHz
VDD = 3 V,
Rm = 30 Ω, - 1.77 -
CL = 20 pF@48 MHz
Maximum critical crystal
Gm Startup - - 1.5 mA/V
transconductance
tSU(HSE)(4) Startup time VDD is stabilized - 2 - ms
1. Guaranteed by design.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 23). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.

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STM32L452xx Electrical characteristics

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 23. Typical application with an 8 MHz crystal

Resonator with integrated

capacitors
CL1

OSC_IN fHSE
Bias
8 MHz controlled
resonator RF gain

REXT (1) OSC_OUT

CL2

MS19876V1

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 58. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).

Table 58. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

LSEDRV[1:0] = 00
- 250 -
Low drive capability
LSEDRV[1:0] = 01
- 315 -
Medium low drive capability
IDD(LSE) LSE current consumption nA
LSEDRV[1:0] = 10
- 500 -
Medium high drive capability
LSEDRV[1:0] = 11
- 630 -
High drive capability
LSEDRV[1:0] = 00
- - 0.5
Low drive capability
LSEDRV[1:0] = 01
- - 0.75
Maximum critical crystal Medium low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11
- - 2.7
High drive capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s

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192
Electrical characteristics STM32L452xx

1. Guaranteed by design.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 24. Typical application with a 32.768 kHz crystal

Resonator with integrated

capacitors
CL1

OSC32_IN fLSE

32.768 kHz Drive

resonator programmable
amplifier

OSC32_OUT
CL2

MS30253V2

Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.

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6.3.8 Internal clock source characteristics

The parameters given in Table 59 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 23: General operating
conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 59. HSI16 oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz

Trimming code is not a
0.2 0.3 0.4
multiple of 64
TRIM HSI16 user trimming step %
Trimming code is a
-4 -6 -8
multiple of 64
DuCy(HSI16)(2) Duty Cycle - 45 - 55 %

HSI16 oscillator frequency TA= 0 to 85 °C -1 - 1 %

∆Temp(HSI16)
drift over temperature TA= -40 to 125 °C -2 - 1.5 %
HSI16 oscillator frequency
∆VDD(HSI16) VDD=1.62 V to 3.6 V -0.1 - 0.05 %
drift over VDD
HSI16 oscillator start-up
tsu(HSI16)(2) - - 0.8 1.2 μs
time
HSI16 oscillator
tstab(HSI16)(2) - - 3 5 μs
stabilization time
HSI16 oscillator power
IDD(HSI16)(2) - - 155 190 μA
consumption
1. Guaranteed by characterization results.
2. Guaranteed by design.

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Figure 25. HSI16 frequency versus temperature

MHz
16.4
+2%
16.3
+1.5%
16.2 +1%

16.1

16

15.9

-1%
15.8
-1.5%
15.7
-2%
15.6
-40 -20 0 20 40 60 80 100 120 °C
min mean max
MSv39299V1

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Multi-speed internal (MSI) RC oscillator

Table 60. MSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Range 0 98.7 100 101.3

Range 1 197.4 200 202.6
kHz
Range 2 394.8 400 405.2
Range 3 789.6 800 810.4
Range 4 0.987 1 1.013
Range 5 1.974 2 2.026
MSI mode
Range 6 3.948 4 4.052
Range 7 7.896 8 8.104
MHz
Range 8 15.79 16 16.21
Range 9 23.69 24 24.31

MSI frequency Range 10 31.58 32 32.42

after factory Range 11 47.38 48 48.62
fMSI calibration, done
at VDD=3 V and Range 0 - 98.304 -
TA=30 °C Range 1 - 196.608 -
kHz
Range 2 - 393.216 -
Range 3 - 786.432 -
Range 4 - 1.016 -
PLL mode Range 5 - 1.999 -
XTAL=
32.768 kHz Range 6 - 3.998 -
Range 7 - 7.995 -
MHz
Range 8 - 15.991 -
Range 9 - 23.986 -
Range 10 - 32.014 -
Range 11 - 48.005 -
MSI oscillator TA= -0 to 85 °C -3.5 - 3
∆TEMP(MSI)(2) frequency drift MSI mode %
over temperature TA= -40 to 125 °C -8 - 6

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Table 60. MSI oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

VDD=1.62 V
-1.2 -
to 3.6 V
Range 0 to 3 0.5
VDD=2.4 V
-0.5 -
to 3.6 V

MSI oscillator VDD=1.62 V

-2.5 -
frequency drift to 3.6 V
∆VDD(MSI)(2) MSI mode Range 4 to 7 0.7 %
over VDD VDD=2.4 V
(reference is 3 V) -0.8 -
to 3.6 V
VDD=1.62 V
-5 -
to 3.6 V
Range 8 to 11 1.2
VDD=2.4 V
-1.6 -
to 3.6 V
Frequency TA= -40 to 85 °C - 1 2
∆FSAMPLING
variation in MSI mode %
(MSI)(2)(6) TA= -40 to 125 °C - 2 4
sampling mode(3)
for next
- - - 3.458
P_USB Period jitter for PLL mode transition
ns
Jitter(MSI)(6) USB clock(4) Range 11 for paired
- - - 3.916
transition
for next
- - - 2
MT_USB Medium term jitter PLL mode transition
ns
Jitter(MSI)(6) for USB clock(5) Range 11 for paired
- - - 1
transition
RMS cycle-to-
CC jitter(MSI)(6) PLL mode Range 11 - - 60 - ps
cycle jitter
P jitter(MSI)(6) RMS Period jitter PLL mode Range 11 - - 50 - ps
Range 0 - - 10 20
Range 1 - - 5 10

MSI oscillator Range 2 - - 4 8

tSU(MSI)(6) us
start-up time Range 3 - - 3 7
Range 4 to 7 - - 3 6
Range 8 to 11 - - 2.5 6
10 % of final
- - 0.25 0.5
frequency
MSI oscillator PLL mode 5 % of final
tSTAB(MSI)(6) - - 0.5 1.25 ms
stabilization time Range 11 frequency
1 % of final
- - - 2.5
frequency

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Table 60. MSI oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Range 0 - - 0.6 1
Range 1 - - 0.8 1.2
Range 2 - - 1.2 1.7
Range 3 - - 1.9 2.5
Range 4 - - 4.7 6
MSI oscillator Range 5 - - 6.5 9
MSI and
IDD(MSI)(6) power µA
PLL mode Range 6 - - 11 15
consumption
Range 7 - - 18.5 25
Range 8 - - 62 80
Range 9 - - 85 110
Range 10 - - 110 130
Range 11 - - 155 190
1. Guaranteed by characterization results.
2. This is a deviation for an individual part once the initial frequency has been measured.
3. Sampling mode means Low-power run/Low-power sleep modes with Temperature sensor disable.
4. Average period of MSI @48 MHz is compared to a real 48 MHz clock over 28 cycles. It includes frequency tolerance + jitter
of MSI @48 MHz clock.
5. Only accumulated jitter of MSI @48 MHz is extracted over 28 cycles.
For next transition: min. and max. jitter of 2 consecutive frame of 28 cycles of the MSI @48 MHz, for 1000 captures over 28
cycles.
For paired transitions: min. and max. jitter of 2 consecutive frame of 56 cycles of the MSI @48 MHz, for 1000 captures over
56 cycles.
6. Guaranteed by design.

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Figure 26. Typical current consumption versus MSI frequency

High-speed internal 48 MHz (HSI48) RC oscillator

Table 61. HSI48 oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI48 HSI48 Frequency VDD=3.0V, TA=30°C - 48 - MHz

TRIM HSI48 user trimming step - - 0.11(2) 0.18(2) %
USER TRIM
HSI48 user trimming coverage ±32 steps ±3(3) ±3.5(3) - %
COVERAGE
DuCy(HSI48) Duty Cycle - 45(2) - 55(2) %
VDD = 3.0 V to 3.6 V,
Accuracy of the HSI48 oscillator - - ±3(3)
TA = –15 to 85 °C
ACCHSI48_REL over temperature (factory %
calibrated) VDD = 1.65 V to 3.6 V,
- - ±4.5(3)
TA = –40 to 125 °C

HSI48 oscillator frequency drift VDD = 3 V to 3.6 V - 0.025(3) 0.05(3)

DVDD(HSI48) %
with VDD VDD = 1.65 V to 3.6 V - 0.05(3) 0.1(3)
tsu(HSI48) HSI48 oscillator start-up time - - 2.5(2) 6(2) μs
HSI48 oscillator power
IDD(HSI48) - - 340(2) 380(2) μA
consumption

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Table 61. HSI48 oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Next transition jitter

NT jitter - - +/-0.15(2) - ns
Accumulated jitter on 28 cycles(4)
Paired transition jitter
PT jitter - - +/-0.25(2) - ns
Accumulated jitter on 56 cycles(4)
1. VDD = 3 V, TA = –40 to 125°C unless otherwise specified.
2. Guaranteed by design.
3. Guaranteed by characterization results.
4. Jitter measurement are performed without clock source activated in parallel.

Figure 27. HSI48 frequency versus temperature

%
6

-2

-4

-6
-50 -30 -10 10 30 50 70 90 110 130
°C
Avg min max
MSv40989V1

Low-speed internal (LSI) RC oscillator

Table 62. LSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDD = 3.0 V, TA = 30 °C 31.04 - 32.96

fLSI LSI Frequency kHz
VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34
LSI oscillator start-
tSU(LSI)(2) - - 80 130 μs
up time
LSI oscillator
tSTAB(LSI)(2) 5% of final frequency - 125 180 μs
stabilization time
LSI oscillator power
IDD(LSI)(2) - - 110 180 nA
consumption
1. Guaranteed by characterization results.
2. Guaranteed by design.

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6.3.9 PLL characteristics

The parameters given in Table 63 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 23: General operating conditions.

Table 63. PLL, PLLSAI1 characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

PLL input clock(2) - 4 - 16 MHz

fPLL_IN
PLL input clock duty cycle - 45 - 55 %
Voltage scaling Range 1 3.0968 - 80
fPLL_P_OUT PLL multiplier output clock P MHz
Voltage scaling Range 2 3.0968 - 26
Voltage scaling Range 1 12 - 80
fPLL_Q_OUT PLL multiplier output clock Q MHz
Voltage scaling Range 2 12 - 26
Voltage scaling Range 1 12 - 80
fPLL_R_OUT PLL multiplier output clock R MHz
Voltage scaling Range 2 12 - 26
Voltage scaling Range 1 96 - 344
fVCO_OUT PLL VCO output MHz
Voltage scaling Range 2 96 - 128
tLOCK PLL lock time - - 15 40 μs
RMS cycle-to-cycle jitter - 40 -
Jitter System clock 80 MHz ±ps
RMS period jitter - 30 -
VCO freq = 96 MHz - 200 260
PLL power consumption on
IDD(PLL) VCO freq = 192 MHz - 300 380 μA
VDD(1)
VCO freq = 344 MHz - 520 650
1. Guaranteed by design.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the 2 PLLs.

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6.3.10 Flash memory characteristics

Table 64. Flash memory characteristics(1)

Symbol Parameter Conditions Typ Max Unit

tprog 64-bit programming time - 81.69 90.76 µs

one row (32 double normal programming 2.61 2.90

tprog_row
word) programming time fast programming 1.91 2.12

one page (2 Kbyte) normal programming 20.91 23.24 ms

tprog_page
programming time fast programming 15.29 16.98
tERASE Page (2 KB) erase time - 22.02 24.47

one bank (512 Kbyte) normal programming 5.35 5.95

tprog_bank s
programming time fast programming 3.91 4.35
Mass erase time
tME - 22.13 24.59 ms
(one or two banks)

Average consumption Write mode 3.4 -

from VDD Erase mode 3.4 -
IDD mA
Write mode 7 (for 2 μs) -
Maximum current (peak)
Erase mode 7 (for 41 μs) -
1. Guaranteed by design.

Table 65. Flash memory endurance and data retention

Symbol Parameter Conditions Min(1) Unit

NEND Endurance TA = –40 to +105 °C 10 kcycles

1 kcycle(2) at TA = 85 °C 30
(2)
1 kcycle at TA = 105 °C 15
(2)
1 kcycle at TA = 125 °C 7
tRET Data retention Years
(2)
10 kcycles at TA = 55 °C 30
10 kcycles(2) at TA = 85 °C 15
(2)
10 kcycles at TA = 105 °C 10
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.

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6.3.11 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
• Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
• FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 66. They are based on the EMS levels and classes
defined in application note AN1709.

Table 66. EMS characteristics

Level/
Symbol Parameter Conditions
Class

VDD = 3.3 V, TA = +25 °C,

Voltage limits to be applied on any I/O pin
VFESD fHCLK = 80 MHz, 3B
to induce a functional disturbance
conforming to IEC 61000-4-2
Fast transient voltage burst limits to be VDD = 3.3 V, TA = +25 °C,
VEFTB applied through 100 pF on VDD and VSS fHCLK = 80 MHz, 5A
pins to induce a functional disturbance conforming to IEC 61000-4-4

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
• Corrupted program counter
• Unexpected reset
• Critical Data corruption (control registers...)

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Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.

Table 67. EMI characteristics

Max vs.
Monitored [fHSE/fHCLK]
Symbol Parameter Conditions Unit
frequency band
8 MHz/ 80 MHz

0.1 MHz to 30 MHz -8

VDD = 3.6 V, TA = 25 °C, 30 MHz to 130 MHz 2
LQFP100 package dBµV
SEMI Peak level 130 MHz to 1 GHz 5
compliant with IEC
61967-2 1 GHz to 2 GHz 8
EMI Level 2.5 -

6.3.12 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.

Table 68. ESD absolute maximum ratings

Maximum
Symbol Ratings Conditions Class Unit
value(1)

TA = +25 °C, conforming

Electrostatic discharge
VESD(HBM) to ANSI/ESDA/JEDEC 2 2000
voltage (human body model)
JS-001
V
Electrostatic discharge TA = +25 °C,
VESD(CDM) voltage (charge device conforming to ANSI/ESD C3 250
model) STM5.3.1
1. Guaranteed by characterization results.

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Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
• A supply overvoltage is applied to each power supply pin.
• A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.

Table 69. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 °C conforming to JESD78A II

6.3.13 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 70.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.

Table 70. I/O current injection susceptibility(1)

Functional
susceptibility
Symbol Description Unit
Negative Positive
injection injection

Injected current on all pins except PA4, PA5, PE8, PE9,

-5 N/A(2)
PE10, PE11, PE12
IINJ mA
Injected current on PE8, PE9, PE10, PE11, PE12 -0 N/A(2)
Injected current on PA4, PA5 pins -5 0
1. Guaranteed by characterization results.
2. Injection is not possible.

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6.3.14 I/O port characteristics

General input/output characteristics
Unless otherwise specified, the parameters given in Table 71 are derived from tests
performed under the conditions summarized in Table 23: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant.

Table 71. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

I/O input low level

1.62 V<VDDIOx<3.6 V - - 0.3xVDDIOx (2)
voltage
I/O input low level
VIL(1) 1.62 V<VDDIOx<3.6 V - - 0.39xVDDIOx-0.06 (3) V
voltage
I/O input low level
1.08 V<VDDIOx<1.62 V - - 0.43xVDDIOx-0.1 (3)
voltage
I/O input high level
1.62 V<VDDIOx<3.6 V 0.7xVDDIOx (2) - -
voltage
I/O input high level
VIH(1) 1.62 V<VDDIOx<3.6 V 0.49xVDDIOX+0.26 (3) - - V
voltage
I/O input high level
1.08 V<VDDIOx<1.62 V 0.61xVDDIOX+0.05 (3) - -
voltage
TT_xx, FT_xxx and
Vhys(3) NRST I/O input 1.62 V<VDDIOx<3.6 V - 200 - mV
hysteresis
VIN ≤
- - ±100
Max(VDDXXX)(5)(6)
FT_xx input leakage Max(VDDXXX) ≤ VIN ≤
- - 650(3)(7)
current(3)(4) Max(VDDXXX)+1 V(5)(6)
Max(VDDXXX)+1 V <
- - 200(7)
VIN ≤ 5.5 V(3)(6)
VIN ≤ Max(VDDXXX)
(5)(6) - - ±150
Ilkg nA
Max(VDDXXX) ≤ VIN ≤
FT_u and PC3 I/O - - 2500(3)
Max(VDDXXX)+1 V(5)(6)
Max(VDDXXX)+1 V <
- - 250
VIN ≤ 5.5 V(5)(6)
VIN ≤ Max(VDDXXX)(7) - - ±150
TT_xx input leakage
current Max(VDDXXX) ≤ VIN <
- - 2000(3)
3.6 V(7)
Weak pull-up
RPU V = VSS 25 40 55 kΩ
equivalent resistor (8) IN
Weak pull-down
RPD VIN = VDDIOx 25 40 55 kΩ
equivalent resistor(8)
CIO I/O pin capacitance - - 5 - pF

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1. Refer to Figure 28: I/O input characteristics.

2. Tested in production.
3. Guaranteed by design.
4. All FT_xx IO except FT_u and PC3 I/O.
5. Max(VDDXXX) is the maximum value of all the I/O supplies.
6. To sustain a voltage higher than Min(VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must be
disabled.
7. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max).
8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 28 for standard I/Os, and in Figure 28 for
5 V tolerant I/Os.

Figure 28. I/O input characteristics

TTL requirement Vih min = 2V

V DDIO
x
x>
1.62
= 0.7x 6 for
V DDIO
min +0.2
Vih 9xV DD
IOx
em ent r 0.4
quir 2o
re x<1.6 >1.62
OS <V DDIO for VD DIOx
on CM for 1.08 -0.06
rod ucti x+
0.05 9 xVDDIOx
in p DDIO or 0.3
ted =0 .61xV VDDIOx
<1.62
Tes ih min r 1.08<
nV -0.1 fo
ulatio xVDDIOx
n sim ax =0
.43
Ba sed o n Vil m xVdd
TTL requirement Vil max = 0.8V
tio .3
on simula ent Vil max = 0
Based OS requirem
ction CM
in produ
Tested

MSv37613V1

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ± 20 mA (with a relaxed VOL/VOH).
GPIOs PC13, PC14 and PC15 are supplied through the power switch, limiting source
capability up to 3 mA only.

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In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
• The sum of the currents sourced by all the I/Os on VDDIOx, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 20: Voltage characteristics).
• The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see
Table 20: Voltage characteristics).

Output voltage levels

Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 23: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT or TT
unless otherwise specified).

Table 72. Output voltage characteristics(1)

Symbol Parameter Conditions Min Max Unit

VOL Output low level voltage for an I/O pin CMOS port(2) - 0.4
|IIO| = 8 mA(3)
VOH Output high level voltage for an I/O pin V VDDIOx-0.4 -
DDIOx ≥ 2.7 V

VOL(4) Output low level voltage for an I/O pin TTL port(2) - 0.4
|IIO| = 8 mA(5)
VOH(4) Output high level voltage for an I/O pin V 2.4 -
DDIOx ≥ 2.7 V

VOL(4) Output low level voltage for an I/O pin PC13, PC14 and PC15 - 0.07
|IIO| = 3 mA
VOH(4) Output high level voltage for an I/O pin V VDDIOx-0.35 -
DDIOx ≥ 2.7 V

VOL(4) Output low level voltage for an I/O pin |IIO| = 20 mA(5) - 1.3
VOH (4) Output high level voltage for an I/O pin VDDIOx ≥ 2.7 V VDDIOx-1.3 -
(4)
V
VOL Output low level voltage for an I/O pin |IIO| = 4 mA(3) - 0.45
VOH(4) Output high level voltage for an I/O pin VDDIOx ≥ 1.62 V VDDIOx-0.45 -
VOL(4) Output low level voltage for an I/O pin |IIO| = 2 mA - 0.35ₓVDDIOx
VOH (4)
Output high level voltage for an I/O pin 1.62 V ≥ VDDIOx ≥ 1.08 V 0.65ₓVDDIOx -
|IIO| = 20 mA
- 0.4
VDDIOx ≥ 2.7 V
Output low level voltage for an FT I/O
VOLFM+ |IIO| = 10 mA
(4) pin in FM+ mode (FT I/O with "f" - 0.4
VDDIOx ≥ 1.62 V
option)
|IIO| = 2 mA
- 0.4
1.62 V ≥ VDDIOx ≥ 1.08 V
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 20:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. PC13, PC14 and PC15 are tested/characterized at their maximum current of 3 mA.
4. Guaranteed by design.
5. Not applicable to PC13, PC14 and PC15.

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Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 29 and
Table 73, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 23: General
operating conditions.

Table 73. I/O AC characteristics(1)(2)

Speed Symbol Parameter Conditions Min Max Unit

C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 5

C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 1
C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 0.1
Fmax Maximum frequency MHz
C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 10
C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 1.5
C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 0.1
00
C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 25
C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 52
C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 140
Tr/Tf Output rise and fall time ns
C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 17
C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 37
C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 110
C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 25
C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 10
C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 1
Fmax Maximum frequency MHz
C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 50
C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 15
C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 1
01
C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 9
C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 16
C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 40
Tr/Tf Output rise and fall time ns
C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 4.5
C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 9
C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 21

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Table 73. I/O AC characteristics(1)(2) (continued)

Speed Symbol Parameter Conditions Min Max Unit

C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 50

C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 25
C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 5
Fmax Maximum frequency MHz
C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 100(3)
C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 37.5
C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 5
10
C=50 pF, 2.7 V≤VDDIOx≤3.6 V - 5.8
C=50 pF, 1.62 V≤VDDIOx≤2.7 V - 11
C=50 pF, 1.08 V≤VDDIOx≤1.62 V - 28
Tr/Tf Output rise and fall time ns
C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 2.5
C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 5
C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 12
C=30 pF, 2.7 V≤VDDIOx≤3.6 V - 120(3)
C=30 pF, 1.62 V≤VDDIOx≤2.7 V - 50
C=30 pF, 1.08 V≤VDDIOx≤1.62 V - 10
Fmax Maximum frequency MHz
C=10 pF, 2.7 V≤VDDIOx≤3.6 V - 180(3)
11 C=10 pF, 1.62 V≤VDDIOx≤2.7 V - 75
C=10 pF, 1.08 V≤VDDIOx≤1.62 V - 10
C=30 pF, 2.7 V≤VDDIOx≤3.6 V - 3.3
Tr/Tf Output rise and fall time C=30 pF, 1.62 V≤VDDIOx≤2.7 V - 6 ns
C=30 pF, 1.08 V≤VDDIOx≤1.62 V - 16
Fmax Maximum frequency - 1 MHz
Fm+ C=50 pF, 1.6 V≤VDDIOx≤3.6 V
(4)
Tf Output fall time - 5 ns
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register.
Refer to the RM0394 reference manual for a description of GPIO Port configuration register.
2. Guaranteed by design.
3. This value represents the I/O capability but the maximum system frequency is limited to 80 MHz.
4. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.

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Figure 29. I/O AC characteristics definition(1)

90% 10%

50% 50%

10% 90%

t r(IO)out t f(IO)out

Maximum frequency is achieved if (t r + t f (≤ 2/3)T and if the duty cycle is (45-55%)

when loaded by the specified capacitance.
MS32132V2

1. Refer to Table 73: I/O AC characteristics.

6.3.15 NRST pin characteristics

The NRST pin input driver uses the CMOS technology. It is connected to a permanent pull-
up resistor, RPU.
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 23: General operating conditions.

Table 74. NRST pin characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

NRST input low level

VIL(NRST) - - - 0.3ₓVDDIOx
voltage
V
NRST input high level
VIH(NRST) - 0.7ₓVDDIOx - -
voltage
NRST Schmitt trigger
Vhys(NRST) - - 200 - mV
voltage hysteresis
Weak pull-up
RPU VIN = VSS 25 40 55 kΩ
equivalent resistor(2)
NRST input filtered
VF(NRST) - - - 70 ns
pulse
NRST input not filtered
VNF(NRST) 1.71 V ≤ VDD ≤ 3.6 V 350 - - ns
pulse
1. Guaranteed by design.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10% order).

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Figure 30. Recommended NRST pin protection

External
reset circuit(1) VDD

RPU
NRST(2) Internal reset
Filter

0.1 μF

MS19878V3

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 74: NRST pin characteristics. Otherwise the reset is not taken into account by the device.
3. The external capacitor on NRST must be placed as close as possible to the device.

6.3.16 Extended interrupt and event controller input (EXTI) characteristics

The pulse on the interrupt input must have a minimal length in order to guarantee that it is
detected by the event controller.

Table 75. EXTI Input Characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Pulse length to event

PLEC - 20 - - ns
controller
1. Guaranteed by design.

6.3.17 Analog switches booster

Table 76. Analog switches booster characteristics(1)

Symbol Parameter Min Typ Max Unit

VDD Supply voltage 1.62 - 3.6 V

tSU(BOOST) Booster startup time - - 240 µs
Booster consumption for
- - 250
1.62 V ≤ VDD ≤ 2.0 V
Booster consumption for
IDD(BOOST) - - 500 µA
2.0 V ≤ VDD ≤ 2.7 V
Booster consumption for
- - 900
2.7 V ≤ VDD ≤ 3.6 V
1. Guaranteed by design.

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6.3.18 Analog-to-Digital converter characteristics

Unless otherwise specified, the parameters given in Table 77 are preliminary values derived
from tests performed under ambient temperature, fPCLK frequency and VDDA supply voltage
conditions summarized in Table 23: General operating conditions.
Note: It is recommended to perform a calibration after each power-up.

Table 77. ADC characteristics(1) (2)

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 1.62 - 3.6 V

VDDA ≥ 2 V 2 - VDDA V
VREF+ Positive reference voltage
VDDA < 2 V VDDA V
Negative reference
VREF- - VSSA V
voltage
Range 1 0.14 - 80
fADC ADC clock frequency MHz
Range 2 0.14 - 26
Resolution = 12 bits - - 5.33

Sampling rate for FAST Resolution = 10 bits - - 6.15

channels Resolution = 8 bits - - 7.27
Resolution = 6 bits - - 8.88
fs Msps
Resolution = 12 bits - - 4.21

Sampling rate for SLOW Resolution = 10 bits - - 4.71

channels Resolution = 8 bits - - 5.33
Resolution = 6 bits - - 6.15
fADC = 80 MHz
- - 5.33 MHz
fTRIG External trigger frequency Resolution = 12 bits
Resolution = 12 bits - - 15 1/fADC
(VREF++ (VREF++
(VREF++
VCMIN Input common mode Differential mode VREF-)/2 VREF-)/2 V
VREF-)/2
- 0.18 + 0.18
Conversion voltage
VAIN (3) - 0 - VREF+ V
range(2)
RAIN External input impedance - - - 50 kΩ
Internal sample and hold
CADC - - 5 - pF
capacitor
conversion
tSTAB Power-up time - 1
cycle
fADC = 80 MHz 1.45 µs
tCAL Calibration time
- 116 1/fADC

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Table 77. ADC characteristics(1) (2) (continued)

Symbol Parameter Conditions Min Typ Max Unit

CKMODE = 00 1.5 2 2.5

Trigger conversion
latency Regular and CKMODE = 01 - - 2.0
tLATR 1/fADC
injected channels without CKMODE = 10 - - 2.25
conversion abort
CKMODE = 11 - - 2.125
CKMODE = 00 2.5 3 3.5
Trigger conversion
latency Injected channels CKMODE = 01 - - 3.0
tLATRINJ 1/fADC
aborting a regular CKMODE = 10 - - 3.25
conversion
CKMODE = 11 - - 3.125
fADC = 80 MHz 0.03125 - 8.00625 µs
ts Sampling time
- 2.5 - 640.5 1/fADC
ADC voltage regulator
tADCVREG_STUP start-up time - - - 20 µs
fADC = 80 MHz
0.1875 - 8.1625 µs
Resolution = 12 bits
Total conversion time
tCONV ts + 12.5 cycles for
(including sampling time)
Resolution = 12 bits successive approximation 1/fADC
= 15 to 653
fs = 5 Msps - 730 830
ADC consumption from
IDDA(ADC) fs = 1 Msps - 160 220 µA
the VDDA supply
fs = 10 ksps - 16 50
fs = 5 Msps - 130 160
ADC consumption from
IDDV_S(ADC) the VREF+ single ended fs = 1 Msps - 30 40 µA
mode
fs = 10 ksps - 0.6 2
fs = 5 Msps - 260 310
ADC consumption from
IDDV_D(ADC) the VREF+ differential fs = 1 Msps - 60 70 µA
mode
fs = 10 ksps - 1.3 3
1. Guaranteed by design
2. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4V). It is disable when VDDA ≥ 2.4 V.
3. VREF+ can be internally connected to VDDA and VREF- can be internally connected to VSSA, depending on the package.
Refer to Section 4: Pinouts and pin description for further details.

The maximum value of RAIN can be found in Table 78: Maximum ADC RAIN.

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Table 78. Maximum ADC RAIN(1)(2)

RAIN max (Ω)
Sampling cycle Sampling time [ns]
Resolution
@80 MHz @80 MHz
Fast channels(3) Slow channels(4)

2.5 31.25 100 N/A

6.5 81.25 330 100
12.5 156.25 680 470
24.5 306.25 1500 1200
12 bits
47.5 593.75 2200 1800
92.5 1156.25 4700 3900
247.5 3093.75 12000 10000
640.5 8006.75 39000 33000
2.5 31.25 120 N/A
6.5 81.25 390 180
12.5 156.25 820 560
24.5 306.25 1500 1200
10 bits
47.5 593.75 2200 1800
92.5 1156.25 5600 4700
247.5 3093.75 12000 10000
640.5 8006.75 47000 39000
2.5 31.25 180 N/A
6.5 81.25 470 270
12.5 156.25 1000 680
24.5 306.25 1800 1500
8 bits
47.5 593.75 2700 2200
92.5 1156.25 6800 5600
247.5 3093.75 15000 12000
640.5 8006.75 50000 50000
2.5 31.25 220 N/A
6.5 81.25 560 330
12.5 156.25 1200 1000
24.5 306.25 2700 2200
6 bits
47.5 593.75 3900 3300
92.5 1156.25 8200 6800
247.5 3093.75 18000 15000
640.5 8006.75 50000 50000
1. Guaranteed by design.

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2. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4V). It is disable when VDDA ≥ 2.4 V.
3. Fast channels are: PC0, PC1, PC2, PC3, PA0, PA1.
4. Slow channels are: all ADC inputs except the fast channels.

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Table 79. ADC accuracy - limited test conditions 1(1)(2)(3)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single Fast channel (max speed) - 4 5

Total ended Slow channel (max speed) - 4 5
ET unadjusted
error Fast channel (max speed) - 3.5 4.5
Differential
Slow channel (max speed) - 3.5 4.5

Single Fast channel (max speed) - 1 2.5

ended Slow channel (max speed) - 1 2.5
Offset
EO
error Fast channel (max speed) - 1.5 2.5
Differential
Slow channel (max speed) - 1.5 2.5

Single Fast channel (max speed) - 2.5 4.5

ended Slow channel (max speed) - 2.5 4.5
EG Gain error LSB
Fast channel (max speed) - 2.5 3.5
Differential
Slow channel (max speed) - 2.5 3.5

Single Fast channel (max speed) - 1 1.5

Differential ended Slow channel (max speed) - 1 1.5
ED linearity
error ADC clock frequency ≤ Fast channel (max speed) - 1 1.2
80 MHz, Differential
Slow channel (max speed) - 1 1.2
Sampling rate ≤ 5.33 Msps,
VDDA = VREF+ = 3 V, Single Fast channel (max speed) - 1.5 2.5
Integral TA = 25 °C ended Slow channel (max speed) - 1.5 2.5
EL linearity
error Fast channel (max speed) - 1 2
Differential
Slow channel (max speed) - 1 2

Single Fast channel (max speed) 10.4 10.5 -

Effective ended Slow channel (max speed) 10.4 10.5 -
ENOB number of bits
bits Fast channel (max speed) 10.8 10.9 -
Differential
Slow channel (max speed) 10.8 10.9 -

Single Fast channel (max speed) 64.4 65 -

Signal-to-
ended Slow channel (max speed) 64.4 65 -
noise and
SINAD
distortion Fast channel (max speed) 66.8 67.4 -
ratio Differential
Slow channel (max speed) 66.8 67.4 -
dB
Single Fast channel (max speed) 65 66 -
ended Slow channel (max speed) 65 66 -
Signal-to-
SNR
noise ratio Fast channel (max speed) 67 68 -
Differential
Slow channel (max speed) 67 68 -

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Table 79. ADC accuracy - limited test conditions 1(1)(2)(3) (continued)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

ADC clock frequency ≤ Single Fast channel (max speed) - -74 -73
Total 80 MHz, ended Slow channel (max speed) - -74 -73
THD harmonic Sampling rate ≤ 5.33 Msps, dB
distortion VDDA = VREF+ = 3 V, Fast channel (max speed) - -79 -76
Differential
TA = 25 °C Slow channel (max speed) - -79 -76
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.

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Table 80. ADC accuracy - limited test conditions 2(1)(2)(3)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single Fast channel (max speed) - 4 6.5

Total ended Slow channel (max speed) - 4 6.5
ET unadjusted
error Fast channel (max speed) - 3.5 5.5
Differential
Slow channel (max speed) - 3.5 5.5

Single Fast channel (max speed) - 1 4.5

ended Slow channel (max speed) - 1 5
Offset
EO
error Fast channel (max speed) - 1.5 3
Differential
Slow channel (max speed) - 1.5 3

Single Fast channel (max speed) - 2.5 6

ended Slow channel (max speed) - 2.5 6
EG Gain error LSB
Fast channel (max speed) - 2.5 3.5
Differential
Slow channel (max speed) - 2.5 3.5

Single Fast channel (max speed) - 1 1.5

Differential ended Slow channel (max speed) - 1 1.5
ED linearity
error Fast channel (max speed) - 1 1.2
ADC clock frequency ≤ Differential
80 MHz, Slow channel (max speed) - 1 1.2
Sampling rate ≤ 5.33 Msps, Fast channel (max speed) - 1.5 3.5
Single
2 V ≤ VDDA ended
Integral Slow channel (max speed) - 1.5 3.5
EL linearity
error Fast channel (max speed) - 1 3
Differential
Slow channel (max speed) - 1 2.5

Single Fast channel (max speed) 10 10.5 -

Effective ended Slow channel (max speed) 10 10.5 -
ENOB number of bits
bits Fast channel (max speed) 10.7 10.9 -
Differential
Slow channel (max speed) 10.7 10.9 -

Single Fast channel (max speed) 62 65 -

Signal-to-
ended Slow channel (max speed) 62 65 -
noise and
SINAD
distortion Fast channel (max speed) 66 67.4 -
ratio Differential
Slow channel (max speed) 66 67.4 -
dB
Single Fast channel (max speed) 64 66 -
ended Slow channel (max speed) 64 66 -
Signal-to-
SNR
noise ratio Fast channel (max speed) 66.5 68 -
Differential
Slow channel (max speed) 66.5 68 -

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Table 80. ADC accuracy - limited test conditions 2(1)(2)(3) (continued)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single Fast channel (max speed) - -74 -65

ADC clock frequency ≤
Total 80 MHz, ended Slow channel (max speed) - -74 -67
THD harmonic dB
Sampling rate ≤ 5.33 Msps, Fast channel (max speed) - -79 -70
distortion
2 V ≤ VDDA Differential
Slow channel (max speed) - -79 -71
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.

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Table 81. ADC accuracy - limited test conditions 3(1)(2)(3)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single Fast channel (max speed) - 5.5 7.5

Total ended Slow channel (max speed) - 4.5 6.5
ET unadjusted
error Fast channel (max speed) - 4.5 7.5
Differential
Slow channel (max speed) - 4.5 5.5

Single Fast channel (max speed) - 2 5

ended Slow channel (max speed) - 2.5 5
Offset
EO
error Fast channel (max speed) - 2 3.5
Differential
Slow channel (max speed) - 2.5 3

Single Fast channel (max speed) - 4.5 7

ended Slow channel (max speed) - 3.5 6
EG Gain error LSB
Fast channel (max speed) - 3.5 4
Differential
Slow channel (max speed) - 3.5 5

Single Fast channel (max speed) - 1.2 1.5

Differential ended Slow channel (max speed) - 1.2 1.5
ED linearity ADC clock frequency ≤
error Fast channel (max speed) - 1 1.2
80 MHz, Differential
Sampling rate ≤ 5.33 Msps, Slow channel (max speed) - 1 1.2
1.65 V ≤ VDDA = VREF+ ≤ Fast channel (max speed) - 3 3.5
Single
3.6 V,
Integral ended Slow channel (max speed) - 2.5 3.5
EL linearity Voltage scaling Range 1
error Fast channel (max speed) - 2 2.5
Differential
Slow channel (max speed) - 2 2.5

Single Fast channel (max speed) 10 10.4 -

Effective ended Slow channel (max speed) 10 10.4 -
ENOB number of bits
bits Fast channel (max speed) 10.6 10.7 -
Differential
Slow channel (max speed) 10.6 10.7 -

Single Fast channel (max speed) 62 64 -

Signal-to-
ended Slow channel (max speed) 62 64 -
noise and
SINAD
distortion Fast channel (max speed) 65 66 -
ratio Differential
Slow channel (max speed) 65 66 -
dB
Single Fast channel (max speed) 63 65 -
ended Slow channel (max speed) 63 65 -
Signal-to-
SNR
noise ratio Fast channel (max speed) 66 67 -
Differential
Slow channel (max speed) 66 67 -

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Table 81. ADC accuracy - limited test conditions 3(1)(2)(3) (continued)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

ADC clock frequency ≤ Single Fast channel (max speed) - -69 -67
80 MHz, ended
Total Slow channel (max speed) - -71 -67
Sampling rate ≤ 5.33 Msps,
THD harmonic Fast channel (max speed) - -72 -71 dB
1.65 V ≤ VDDA = VREF+ ≤
distortion
3.6 V, Differential
Slow channel (max speed) - -72 -71
Voltage scaling Range 1
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.

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Table 82. ADC accuracy - limited test conditions 4(1)(2)(3)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

Single Fast channel (max speed) - 5 5.4

Total ended Slow channel (max speed) - 4 5
ET unadjusted
error Fast channel (max speed) - 4 5
Differential
Slow channel (max speed) - 3.5 4.5

Single Fast channel (max speed) - 2 4

ended Slow channel (max speed) - 2 4
Offset
EO
error Fast channel (max speed) - 2 3.5
Differential
Slow channel (max speed) - 2 3.5

Single Fast channel (max speed) - 4 4.5

ended Slow channel (max speed) - 4 4.5
EG Gain error LSB
Fast channel (max speed) - 3 4
Differential
Slow channel (max speed) - 3 4

Single Fast channel (max speed) - 1 1.5

Differential ended Slow channel (max speed) - 1 1.5
ED linearity
error ADC clock frequency ≤ Fast channel (max speed) - 1 1.2
26 MHz, Differential
Slow channel (max speed) - 1 1.2
1.65 V ≤ VDDA = VREF+ ≤
3.6 V, Single Fast channel (max speed) - 2.5 3
Integral Voltage scaling Range 2 ended Slow channel (max speed) - 2.5 3
EL linearity
error Fast channel (max speed) - 2 2.5
Differential
Slow channel (max speed) - 2 2.5

Single Fast channel (max speed) 10.2 10.5 -

Effective ended Slow channel (max speed) 10.2 10.5 -
ENOB number of bits
bits Fast channel (max speed) 10.6 10.7 -
Differential
Slow channel (max speed) 10.6 10.7 -

Single Fast channel (max speed) 63 65 -

Signal-to-
ended Slow channel (max speed) 63 65 -
noise and
SINAD
distortion Fast channel (max speed) 65 66 -
ratio Differential
Slow channel (max speed) 65 66 -
dB
Single Fast channel (max speed) 64 65 -
ended Slow channel (max speed) 64 65 -
Signal-to-
SNR
noise ratio Fast channel (max speed) 66 67 -
Differential
Slow channel (max speed) 66 67 -

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Table 82. ADC accuracy - limited test conditions 4(1)(2)(3) (continued)

Sym-
Parameter Conditions(4) Min Typ Max Unit
bol

ADC clock frequency ≤ Single Fast channel (max speed) - -71 -69
Total 26 MHz, ended Slow channel (max speed) - -71 -69
THD harmonic 1.65 V ≤ VDDA = VREF+ ≤ dB
distortion 3.6 V, Fast channel (max speed) - -73 -72
Differential
Voltage scaling Range 2 Slow channel (max speed) - -73 -72
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.

Figure 31. ADC accuracy characteristics

VSSA EG (1) Example of an actual transfer curve

4095
(2) The ideal transfer curve
4094 (3) End point correlation line
4093
(2)
ET = total unajusted error: maximum deviation
between the actual and ideal transfer curves.
ET EO = offset error: maximum deviation
(3)
7 between the first actual transition and
(1)
6 the first ideal one.
EG = gain error: deviation between the last
5
EO EL
ideal transition and the last actual one.
4 ED = differential linearity error: maximum
3 deviation between actual steps and the ideal ones.
ED
EL = integral linearity error: maximum deviation
2
between any actual transition and the end point
1 LSB IDEAL
1 correlation line.

0
1 2 3 4 5 6 7 4093 4094 4095 4096 VDDA

MS19880V2

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Figure 32. Typical connection diagram using the ADC

VDDA

VT Sample and hold ADC converter

RAIN(1) AINx RADC

12-bit
converter
Cparasitic(2) VT Ilkg (3) CADC
VAIN

MS33900V5

1. Refer to Table 77: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 71: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 71: I/O static characteristics for the values of Ilkg.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 18: Power supply
scheme. The 10 nF capacitor should be ceramic (good quality) and it should be placed as
close as possible to the chip.

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6.3.19 Digital-to-Analog converter characteristics

Table 83. DAC characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

DAC output buffer OFF (no resistive

load on DAC1_OUT1 pin or internal 1.71 -
Analog supply voltage for
VDDA connection) 3.6
DAC ON
Other modes 1.80 -

DAC output buffer OFF (no resistive

V
load on DAC1_OUT1 pin or internal 1.71 -
VREF+ Positive reference voltage connection) VDDA

Other modes 1.80 -

Negative reference
VREF- - VSSA
voltage

DAC output connected to VSSA 5 - -

RL Resistive load kΩ
buffer ON connected to VDDA 25 - -
RO Output Impedance DAC output buffer OFF 9.6 11.7 13.8 kΩ
Output impedance sample VDD = 2.7 V - - 2
RBON and hold mode, output kΩ
buffer ON VDD = 2.0 V - - 3.5

Output impedance sample VDD = 2.7 V - - 16.5

RBOFF and hold mode, output kΩ
buffer OFF VDD = 2.0 V - - 18.0

CL DAC output buffer ON - - 50 pF

Capacitive load
CSH Sample and hold mode - 0.1 1 µF
VREF+
Voltage on DAC1_OUT1 DAC output buffer ON 0.2 -
VDAC_OUT – 0.2 V
output
DAC output buffer OFF 0 - VREF+
±0.5 LSB - 1.7 3
Settling time (full scale: for Normal mode
a 12-bit code transition ±1 LSB - 1.6 2.9
DAC output
between the lowest and buffer ON ±2 LSB - 1.55 2.85
the highest input codes CL ≤ 50 pF,
tSETTLING ±4 LSB - 1.48 2.8 µs
when DAC1_OUT1 RL ≥ 5 kΩ
reaches final value ±8 LSB - 1.4 2.75
±0.5LSB, ±1 LSB, ±2 LSB,
±4 LSB, ±8 LSB) Normal mode DAC output buffer
- 2 2.5
OFF, ±1LSB, CL = 10 pF

Wakeup time from off state Normal mode DAC output buffer ON
- 4.2 7.5
(setting the ENx bit in the CL ≤ 50 pF, RL ≥ 5 kΩ
tWAKEUP(2) µs
DAC Control register) until Normal mode DAC output buffer
final value ±1 LSB - 2 5
OFF, CL ≤ 10 pF
Normal mode DAC output buffer ON
PSRR VDDA supply rejection ratio - -80 -28 dB
CL ≤ 50 pF, RL = 5 kΩ, DC

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Table 83. DAC characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Minimal time between two

consecutive writes into the
DAC_DORx register to
guarantee a correct
DAC1_OUT1 for a small
TW_to_W variation of the input code - - µs
(1 LSB)
DAC_MCR:MODEx[2:0] =
000 or 001 CL ≤ 50 pF, RL ≥ 5 kΩ 1
DAC_MCR:MODEx[2:0] =
010 or 011 CL ≤ 10 pF 1.4
DAC output buffer
- 0.7 3.5
DAC1_OUT1 ON, CSH = 100 nF
Sampling time in sample ms
pin connected DAC output buffer
and hold mode (code - 10.5 18
OFF, CSH = 100 nF
transition between the
tSAMP lowest input code and the DAC1_OUT1
highest input code when pin not
DAC1_OUT1 reaches final connected DAC output buffer
- 2 3.5 µs
value ±1LSB) (internal OFF
connection
only)
Sample and hold mode,
Ileak Output leakage current - - -(3) nA
DAC1_OUT1 pin connected
Internal sample and hold
CIint - 5.2 7 8.8 pF
capacitor
Middle code offset trim
tTRIM DAC output buffer ON 50 - - µs
time

Middle code offset for 1 VREF+ = 3.6 V - 1500 -

Voffset µV
trim code step VREF+ = 1.8 V - 750 -
No load, middle
- 315 500
DAC output code (0x800)
buffer ON No load, worst code
- 450 670
(0xF1C)
DAC consumption from DAC output No load, middle
IDDA(DAC) - - 0.2 µA
VDDA buffer OFF code (0x800)
315 ₓ 670 ₓ
Sample and hold mode, CSH = Ton/(Ton Ton/(Ton
-
100 nF +Toff) +Toff)
(4) (4)

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Table 83. DAC characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

No load, middle
- 185 240
DAC output code (0x800)
buffer ON No load, worst code
- 340 400
(0xF1C)
DAC output No load, middle
- 155 205
buffer OFF code (0x800)
DAC consumption from
IDDV(DAC) 185 ₓ 400 ₓ µA
VREF+
Sample and hold mode, buffer ON, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)

155 ₓ 205 ₓ
Sample and hold mode, buffer OFF, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)

1. Guaranteed by design.
2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
3. Refer to Table 71: I/O static characteristics.
4. Ton is the Refresh phase duration. Toff is the Hold phase duration. Refer to RM0394 reference manual for more details.

Figure 33. 12-bit buffered / non-buffered DAC

Buffered/non-buffered DAC

(1)
Buffer

RLOAD
12-bit
DACx_OUT
digital to
analog
converter
CLOAD

ai17157d

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.

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Table 84. DAC accuracy(1)

.

Symbol Parameter Conditions Min Typ Max Unit

Differential non DAC output buffer ON - - ±2

DNL
linearity (2) DAC output buffer OFF - - ±2
- monotonicity 10 bits guaranteed
DAC output buffer ON
- - ±4
Integral non CL ≤ 50 pF, RL ≥ 5 kΩ
INL
linearity(3) DAC output buffer OFF
- - ±4
CL ≤ 50 pF, no RL

VREF+ = 3.6 V - - ±12

DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ LSB
Offset error at
Offset VREF+ = 1.8 V - - ±25
code 0x800(3)
DAC output buffer OFF
- - ±8
CL ≤ 50 pF, no RL
Offset error at DAC output buffer OFF
Offset1 - - ±5
code 0x001(4) CL ≤ 50 pF, no RL

Offset Error at VREF+ = 3.6 V - - ±5

DAC output buffer ON
OffsetCal code 0x800
CL ≤ 50 pF, RL ≥ 5 kΩ
after calibration VREF+ = 1.8 V - - ±7

DAC output buffer ON

- - ±0.5
CL ≤ 50 pF, RL ≥ 5 kΩ
(5)
Gain Gain error %
DAC output buffer OFF
- - ±0.5
CL ≤ 50 pF, no RL
DAC output buffer ON
Total - - ±30
CL ≤ 50 pF, RL ≥ 5 kΩ
TUE unadjusted LSB
error DAC output buffer OFF
- - ±12
CL ≤ 50 pF, no RL
Total
unadjusted DAC output buffer ON
TUECal - - ±23 LSB
error after CL ≤ 50 pF, RL ≥ 5 kΩ
calibration
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ - 71.2 -
Signal-to-noise 1 kHz, BW 500 kHz
SNR dB
ratio DAC output buffer OFF
CL ≤ 50 pF, no RL, 1 kHz - 71.6 -
BW 500 kHz
DAC output buffer ON
- -78 -
Total harmonic CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
THD dB
distortion DAC output buffer OFF
- -79 -
CL ≤ 50 pF, no RL, 1 kHz

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Table 84. DAC accuracy(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DAC output buffer ON

Signal-to-noise - 70.4 -
CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
SINAD and distortion dB
ratio DAC output buffer OFF
- 71 -
CL ≤ 50 pF, no RL, 1 kHz
DAC output buffer ON
- 11.4 -
Effective CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
ENOB bits
number of bits DAC output buffer OFF
- 11.5 -
CL ≤ 50 pF, no RL, 1 kHz
1. Guaranteed by design.
2. Difference between two consecutive codes - 1 LSB.
3. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.
4. Difference between the value measured at Code (0x001) and the ideal value.
5. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when
buffer is OFF, and from code giving 0.2 V and (VREF+ – 0.2) V when buffer is ON.

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6.3.20 Voltage reference buffer characteristics

Table 85. VREFBUF characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VRS = 0 2.4 - 3.6

Normal mode
Analog supply VRS = 1 2.8 - 3.6
VDDA
voltage VRS = 0 1.65 - 2.4
Degraded mode(2)
VRS = 1 1.65 - 2.8
V
(3)
VRS = 0 2.046 2.048 2.049(3)
Normal mode
Voltage VRS = 1 2.498(3) 2.5 2.502(3)
VREFBUF_
reference
OUT output VRS = 0 VDDA-150 mV - VDDA
Degraded mode(2)
VRS = 1 VDDA-150 mV - VDDA
Trim step
TRIM - - - ±0.05 ±0.1 %
resolution
CL Load capacitor - - 0.5 1 1.5 µF
Equivalent
esr Serial Resistor - - - - 2 Ω
of Cload
Static load
Iload - - - - 4 mA
current
Iload = 500 µA - 200 1000
Iline_reg Line regulation 2.8 V ≤ VDDA ≤ 3.6 V ppm/V
Iload = 4 mA - 100 500
Load
Iload_reg 500 μA ≤ Iload ≤4 mA Normal mode - 50 500 ppm/mA
regulation
Tcoeff_
-40 °C < TJ < +125 °C - - vrefint +
Temperature 50
TCoeff ppm/ °C
coefficient Tcoeff_
0 °C < TJ < +50 °C - - vrefint +
50

Power supply DC 40 60 -
PSRR dB
rejection 100 kHz 25 40 -
CL = 0.5 µF(4) - 300 350
tSTART Start-up time CL = 1.1 µF(4) - 500 650 µs
(4)
CL = 1.5 µF - 650 800
Control of
maximum DC
current drive
IINRUSH on VREFBUF_ - - - 8 - mA
OUT during
start-up phase
(5)

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Table 85. VREFBUF characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Iload = 0 µA - 16 25
VREFBUF
IDDA(VREF
consumption Iload = 500 µA - 18 30 µA
BUF)
from VDDA
Iload = 4 mA - 35 50
1. Guaranteed by design, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which follows (VDDA - drop
voltage).
3. Guaranteed by test in production.
4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.
5. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.

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6.3.21 Comparator characteristics

Table 86. COMP characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 1.62 - 3.6

Comparator input voltage
VIN - 0 - VDDA V
range
VBG(2) Scaler input voltage - VREFINT
VSC Scaler offset voltage - - ±5 ±10 mV

Scaler static consumption BRG_EN=0 (bridge disable) - 200 300 nA

IDDA(SCALER)
from VDDA BRG_EN=1 (bridge enable) - 0.8 1 µA
tSTART_SCALER Scaler startup time - - 100 200 µs

High-speed VDDA ≥ 2.7 V - - 5

mode VDDA < 2.7 V - - 7
Comparator startup time to
tSTART reach propagation delay VDDA ≥ 2.7 V - - 15 µs
specification Medium mode
VDDA < 2.7 V - - 25
Ultra-low-power mode - - 40

High-speed VDDA ≥ 2.7 V - 55 80

ns
mode VDDA < 2.7 V - 65 100
(3) Propagation delay with
tD
100 mV overdrive Medium mode - 0.55 0.9
µs
Ultra-low-power mode - 4 7
Full common
Voffset Comparator offset error - - ±5 ±20 mV
mode range
No hysteresis - 0 -
Low hysteresis - 8 -
Vhys Comparator hysteresis mV
Medium hysteresis - 15 -
High hysteresis - 27 -

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Table 86. COMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Static - 400 600

Ultra-low- With 50 kHz nA
power mode ±100 mV overdrive - 1200 -
square signal
Static - 5 7
Comparator consumption
IDDA(COMP) Medium mode With 50 kHz
from VDDA ±100 mV overdrive - 6 -
square signal
µA
Static - 70 100
High-speed With 50 kHz
mode ±100 mV overdrive - 75 -
square signal

Comparator input bias - - - -(4)

Ibias nA
current
1. Guaranteed by design, unless otherwise specified.
2. Refer to Table 26: Embedded internal voltage reference.
3. Guaranteed by characterization results.
4. Mostly I/O leakage when used in analog mode. Refer to Ilkg parameter in Table 71: I/O static characteristics.

6.3.22 Operational amplifiers characteristics

Table 87. OPAMP characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Analog supply
VDDA - 1.8 - 3.6 V
voltage(2)
Common mode
CMIR - 0 - VDDA V
input range

Input offset 25 °C, No Load on output. - - ±1.5

VIOFFSET mV
voltage All voltage/Temp. - - ±3

Input offset Normal mode - ±5 -

∆VIOFFSET μV/°C
voltage drift Low-power mode - ±10 -
Offset trim step
TRIMOFFSETP at low common
- - 0.8 1.1
TRIMLPOFFSETP input voltage
(0.1 ₓ VDDA)
mV
Offset trim step
TRIMOFFSETN at high common
- - 1 1.35
TRIMLPOFFSETN input voltage
(0.9 ₓ VDDA)

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Table 87. OPAMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Normal mode - - 500

ILOAD Drive current VDDA ≥ 2 V
Low-power mode - - 100
µA
Drive current in Normal mode - - 450
ILOAD_PGA VDDA ≥ 2 V
PGA mode Low-power mode - - 50

Resistive load Normal mode 4 - -

(connected to
RLOAD VDDA < 2 V
VSSA or to
VDDA) Low-power mode 20 - -
kΩ
Resistive load
Normal mode 4.5 - -
in PGA mode
RLOAD_PGA (connected to VDDA < 2 V
VSSA or to
Low-power mode 40 - -
VDDA)
CLOAD Capacitive load - - - 50 pF

Common mode Normal mode - -85 -

CMRR dB
rejection ratio Low-power mode - -90 -
CLOAD ≤ 50 pf,
Normal mode 70 85 -
Power supply RLOAD ≥ 4 kΩ DC
PSRR dB
rejection ratio CLOAD ≤ 50 pf,
Low-power mode 72 90 -
RLOAD ≥ 20 kΩ DC
Normal mode VDDA ≥ 2.4 V 550 1600 2200
(OPA_RANGE = 1)
Gain Bandwidth Low-power mode 100 420 600
GBW kHz
Product Normal mode 250 700 950
VDDA < 2.4 V
Low-power mode (OPA_RANGE = 0) 40 180 280
Normal mode - 700 -
Slew rate VDDA ≥ 2.4 V
(from 10 and Low-power mode - 180 -
SR(3) V/ms
90% of output Normal mode - 300 -
voltage) VDDA < 2.4 V
Low-power mode - 80 -
Normal mode 55 110 -
AO Open loop gain dB
Low-power mode 45 110 -
VDDA -
Normal mode - -
High saturation Iload = max or Rload = 100
VOHSAT(3)
voltage min Input at VDDA. VDDA -
Low-power mode - - mV
50

Low saturation Normal mode Iload = max or Rload = - - 100

VOLSAT(3)
voltage Low-power mode min Input at 0. - - 50
Normal mode - 74 -
φm Phase margin °
Low-power mode - 66 -

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Table 87. OPAMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Normal mode - 13 -
GM Gain margin dB
Low-power mode - 20 -
CLOAD ≤ 50 pf,
RLOAD ≥ 4 kΩ
Normal mode - 5 10
follower
Wake up time configuration
tWAKEUP µs
from OFF state. CLOAD ≤ 50 pf,
RLOAD ≥ 20 kΩ
Low-power mode - 10 30
follower
configuration
OPAMP input
Ibias General purpose input - - -(4) nA
bias current
- 2 -

Non inverting - 4 -
PGA gain(3) - -
gain value - 8 -
- 16 -
PGA Gain = 2 - 80/80 -
120/
R2/R1 internal PGA Gain = 4 - -
40
resistance
Rnetwork 140/ kΩ/kΩ
values in PGA PGA Gain = 8 - -
mode(5) 20
150/
PGA Gain = 16 - -
10
Resistance
Delta R variation (R1 or - -15 - 15 %
R2)
PGA gain error PGA gain error - -1 - 1 %
GBW/
Gain = 2 - - -
2
GBW/
PGA bandwidth Gain = 4 - -
4
-
PGA BW for different non MHz
inverting gain GBW/
Gain = 8 - - -
8
GBW/
Gain = 16 - - -
16

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Table 87. OPAMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

at 1 kHz, Output
Normal mode - 500 -
loaded with 4 kΩ
at 1 kHz, Output
Low-power mode - 600 -
Voltage noise loaded with 20 kΩ
en nV/√Hz
density at 10 kHz, Output
Normal mode - 180 -
loaded with 4 kΩ
at 10 kHz, Output
Low-power mode - 290 -
loaded with 20 kΩ
OPAMP Normal mode - 120 260
no Load, quiescent
IDDA(OPAMP)(3) consumption µA
Low-power mode mode - 45 100
from VDDA
1. Guaranteed by design, unless otherwise specified.
2. The temperature range is limited to 0 °C-125 °C when VDDA is below 2 V
3. Guaranteed by characterization results.
4. Mostly I/O leakage, when used in analog mode. Refer to Ilkg parameter in Table 71: I/O static characteristics.
5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between
OPAMP inverting input and ground. The PGA gain =1+R2/R1

6.3.23 Temperature sensor characteristics

Table 88. TS characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VTS linearity with temperature - ±1 ±2 °C

(2)
Avg_Slope Average slope 2.3 2.5 2.7 mV/°C
V30 Voltage at 30°C (±5 °C)(3) 0.742 0.76 0.785 V
tSTART
Sensor Buffer Start-up time in continuous mode(4) - 8 15 µs
(TS_BUF)(1)

tSTART(1) Start-up time when entering in continuous mode(4) - 70 120 µs

tS_temp(1) ADC sampling time when reading the temperature 5 - - µs

Temperature sensor consumption from VDD, when

IDD(TS)(1) - 4.7 7 µA
selected by ADC
1. Guaranteed by design.
2. Guaranteed by characterization results.
3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 8:
Temperature sensor calibration values.
4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

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6.3.24 VBAT monitoring characteristics

Table 89. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT - 39 - kΩ

Q Ratio on VBAT measurement - 3 - -
(1)
Er Error on Q -10 - 10 %
(1)
tS_vbat ADC sampling time when reading the VBAT 12 - - µs
1. Guaranteed by design.

Table 90. VBAT charging characteristics

Symbol Parameter Conditions Min Typ Max Unit

Battery VBRS = 0 - 5 -
RBC charging kΩ
resistor VBRS = 1 - 1.5 -

6.3.25 Timer characteristics

The parameters given in the following tables are guaranteed by design.
Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).

Table 91. TIMx(1) characteristics

Symbol Parameter Conditions Min Max Unit

- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 80 MHz 12.5 - ns

Timer external clock - 0 fTIMxCLK/2 MHz

fEXT
frequency on CH1 to CH4 f
TIMxCLK = 80 MHz 0 40 MHz
TIMx (except
- 16
ResTIM Timer resolution TIM2) bit
TIM2 - 32

16-bit counter clock - 1 65536 tTIMxCLK

tCOUNTER
period fTIMxCLK = 80 MHz 0.0125 819.2 µs

Maximum possible count - - 65536 × 65536 tTIMxCLK

tMAX_COUNT
with 32-bit counter fTIMxCLK = 80 MHz - 53.68 s
1. TIMx, is used as a general term in which x stands for 1,2,3,4,5,6,7,8,15,16 or 17.

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Table 92. IWDG min/max timeout period at 32 kHz (LSI)(1)

Min timeout RL[11:0]= Max timeout RL[11:0]=
Prescaler divider PR[2:0] bits Unit
0x000 0xFFF

/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock so that there
is always a full RC period of uncertainty.

Table 93. WWDG min/max timeout value at 80 MHz (PCLK)

Prescaler WDGTB Min timeout value Max timeout value Unit

1 0 0.0512 3.2768
2 1 0.1024 6.5536
ms
4 2 0.2048 13.1072
8 3 0.4096 26.2144

6.3.26 Communication interfaces characteristics

I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev. 03 for:
• Standard-mode (Sm): with a bitrate up to 100 kbit/s
• Fast-mode (Fm): with a bitrate up to 400 kbit/s
• Fast-mode Plus (Fm+): with a bitrate up to 1 Mbit/s.
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to RM0394 reference manual).
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDDIOx is disabled, but is still present. Only FT_f I/O pins
support Fm+ low level output current maximum requirement. Refer to Section 6.3.14: I/O
port characteristics for the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog
filter characteristics:

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Table 94. I2C analog filter characteristics(1)

Symbol Parameter Min Max Unit

Maximum pulse width of spikes

tAF that are suppressed by the analog 50(2) 260(3) ns
filter
1. Guaranteed by design.
2. Spikes with widths below tAF(min) are filtered.
3. Spikes with widths above tAF(max) are not filtered

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SPI characteristics
Unless otherwise specified, the parameters given in Table 95 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 23: General operating conditions.
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).

Table 95. SPI characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

Master mode receiver/full duplex

2.7 < VDD < 3.6 V 40
Voltage Range 1
Master mode receiver/full duplex
1.71 < VDD < 3.6 V 16
Voltage Range 1
Master mode transmitter
1.71 < VDD < 3.6 V 40
Voltage Range 1
fSCK
SPI clock frequency Slave mode receiver - - MHz
1/tc(SCK)
1.71 < VDD < 3.6 V 40
Voltage Range 1
Slave mode transmitter/full duplex
2.7 < VDD < 3.6 V 37(2)
Voltage Range 1
Slave mode transmitter/full duplex
1.71 < VDD < 3.6 V 20(2)
Voltage Range 1
Voltage Range 2 13
tsu(NSS) NSS setup time Slave mode, SPI prescaler = 2 4ₓTPCLK - - ns
th(NSS) NSS hold time Slave mode, SPI prescaler = 2 2ₓTPCLK - - ns
tw(SCKH)
SCK high and low time Master mode TPCLK-2 TPCLK TPCLK+2 ns
tw(SCKL)
tsu(MI) Master mode 4 - -
Data input setup time ns
tsu(SI) Slave mode 1.5 - -
th(MI) Master mode 6.5 - -
Data input hold time ns
th(SI) Slave mode 1.5 - -
ta(SO) Data output access time Slave mode 9 - 36 ns
tdis(SO) Data output disable time Slave mode 9 - 16 ns

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Table 95. SPI characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Slave mode 2.7 < VDD < 3.6 V

- 12.5 13.5
Voltage Range 1
Slave mode 1.71 < VDD < 3.6 V
tv(SO) - 12.5 24
Data output valid time Voltage Range 1 ns
Slave mode 1.71 < VDD < 3.6 V
- 12.5 33
Voltage Range 2
tv(MO) Master mode - 4.5 6
th(SO) Slave mode 7 - -
Data output hold time ns
th(MO) Master mode 0 - -
1. Guaranteed by characterization results.
2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or
high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master
having tsu(MI) = 0 while Duty(SCK) = 50 %.

Figure 34. SPI timing diagram - slave mode and CPHA = 0

NSS input

tc(SCK) th(NSS)

tsu(NSS) tw(SCKH) tr(SCK)

CPHA=0
SCK input

CPOL=0

CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tf(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

th(SI)
tsu(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41658V1

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Electrical characteristics STM32L452xx

Figure 35. SPI timing diagram - slave mode and CPHA = 1

NSS input

tc(SCK)

tsu(NSS) tw(SCKH) tf(SCK) th(NSS)

CPHA=1
SCK input

CPOL=0

CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tr(SCK) tdis(SO)

MISO output First bit OUT Next bits OUT Last bit OUT

tsu(SI) th(SI)

MOSI input First bit IN Next bits IN Last bit IN

MSv41659V1

1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.

Figure 36. SPI timing diagram - master mode

High

NSS input

tc(SCK)
SCK Output

CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
SCK Output

CPHA=1
CPOL=0
CPHA=1
CPOL=1

tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INP UT MSB IN BIT6 IN LSB IN

th(MI)
MOSI
MSB OUT B I T1 OUT LSB OUT
OUTPUT
tv(MO) th(MO)
ai14136c

1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.

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STM32L452xx Electrical characteristics

Quad SPI characteristics

Unless otherwise specified, the parameters given in Table 96 and Table 97 for Quad SPI
are derived from tests performed under the ambient temperature, fAHB frequency and VDD
supply voltage conditions summarized in Table 23: General operating conditions, with the
following configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 15 or 20 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics.

Table 96. Quad SPI characteristics in SDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

1.71 < VDD< 3.6 V, CLOAD = 20 pF

- - 40
Voltage Range 1
1.71 < VDD< 3.6 V, CLOAD = 15 pF
- - 48
FCK Voltage Range 1
Quad SPI clock frequency MHz
1/t(CK) 2.7 < VDD< 3.6 V, CLOAD = 15 pF
- - 60
Voltage Range 1
1.71 < VDD < 3.6 V CLOAD = 20 pF
- - 26
Voltage Range 2
tw(CKH) Quad SPI clock high and t(CK)/2-2 - t(CK)/2
fAHBCLK= 48 MHz, presc=0
tw(CKL) low time t(CK)/2 - t(CK)/2+2
Voltage Range 1 2 - -
ts(IN) Data input setup time
Voltage Range 2 3.5 - -
Voltage Range 1 5 - -
th(IN) Data input hold time ns
Voltage Range 2 6.5 - -
Voltage Range 1 - 1 5
tv(OUT) Data output valid time
Voltage Range 2 - 3 5
Voltage Range 1 0 - -
th(OUT) Data output hold time
Voltage Range 2 0 - -
1. Guaranteed by characterization results.

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Table 97. QUADSPI characteristics in DDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

1.71 < VDD < 3.6 V, CLOAD = 20 pF

- - 40
Voltage Range 1
2 < VDD < 3.6 V, CLOAD = 20 pF
- - 48
FCK Quad SPI clock Voltage Range 1
MHz
1/t(CK) frequency 1.71 < VDD < 3.6 V, CLOAD = 15 pF
- - 48
Voltage Range 1
1.71 < VDD < 3.6 V CLOAD = 20 pF
- - 26
Voltage Range 2
tw(CKH) Quad SPI clock high t(CK)/2-2 - t(CK)/2
fAHBCLK = 48 MHz, presc=0
tw(CKL) and low time t(CK)/2 - t(CK)/2+2

Data input setup time Voltage Range 1 1

tsr(IN) - -
on rising edge Voltage Range 2 3.5

Data input setup time Voltage Range 1 1

tsf(IN) - -
on falling edge Voltage Range 2 1.5

Data input hold time Voltage Range 1 6

thr(IN) - -
on rising edge Voltage Range 2 6.5

Data input hold time Voltage Range 1 5.5

thf(IN) - - ns
on falling edge Voltage Range 2 5.5

Data output valid time Voltage Range 1 5 5.5

tvr(OUT) -
on rising edge Voltage Range 2 9.5 14

Data output valid time Voltage Range 1 5 8.5

tvf(OUT) -
on falling edge Voltage Range 2 15 19

Data output hold time Voltage Range 1 3.5 -

thr(OUT) -
on rising edge Voltage Range 2 8 -

Data output hold time Voltage Range 1 3.5 -

thf(OUT) -
on falling edge Voltage Range 2 13 -
1. Guaranteed by characterization results.

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STM32L452xx Electrical characteristics

Figure 37. Quad SPI timing diagram - SDR mode

tr(CK) t(CK) tw(CKH) tw(CKL) tf(CK)

Clock
tv(OUT) th(OUT)

Data output D0 D1 D2

ts(IN) th(IN)

Data input D0 D1 D2
MSv36878V1

Figure 38. Quad SPI timing diagram - DDR mode

tr(CLK) t(CLK) tw(CLKH) tw(CLKL) tf(CLK)

Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)

Data output IO0 IO1 IO2 IO3 IO4 IO5

tsf(IN) thf(IN) tsr(IN) thr(IN)

Data input IO0 IO1 IO2 IO3 IO4 IO5

MSv36879V3

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SAI characteristics

Unless otherwise specified, the parameters given in Table 98 for SAI are derived
from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized inTable 23: General operating conditions, with
the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output
alternate function characteristics (CK,SD,FS).

Table 98. SAI characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCLK SAI Main clock output - - 50 MHz

Master transmitter
2.7 ≤ VDD ≤ 3.6 - 18.5
Voltage Range 1
Master transmitter
1.71 ≤ VDD ≤ 3.6 - 12.5
Voltage Range 1
Master receiver
- 25
Voltage Range 1
fCK SAI clock frequency(2) Slave transmitter MHz
2.7 ≤ VDD ≤ 3.6 - 22.5
Voltage Range 1
Slave transmitter
1.71 ≤ VDD ≤ 3.6 - 14.5
Voltage Range 1
Slave receiver
- 25
Voltage Range 1
Voltage Range 2 - 12.5
Master mode
- 22
2.7 ≤ VDD ≤ 3.6
tv(FS) FS valid time ns
Master mode
- 40
1.71 ≤ VDD ≤ 3.6
th(FS) FS hold time Master mode 10 - ns
tsu(FS) FS setup time Slave mode 1 - ns
th(FS) FS hold time Slave mode 2 - ns
tsu(SD_A_MR) Master receiver 2 -
Data input setup time ns
tsu(SD_B_SR) Slave receiver 1.5 -
th(SD_A_MR) Master receiver 5 -
Data input hold time ns
th(SD_B_SR) Slave receiver 2.5 -

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STM32L452xx Electrical characteristics

Table 98. SAI characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

Slave transmitter (after enable edge)

- 22
2.7 ≤ VDD ≤ 3.6
tv(SD_B_ST) Data output valid time ns
Slave transmitter (after enable edge)
- 34
1.71 ≤ VDD ≤ 3.6
th(SD_B_ST) Data output hold time Slave transmitter (after enable edge) 10 - ns
Master transmitter (after enable edge)
- 27
2.7 ≤ VDD ≤ 3.6
tv(SD_A_MT) Data output valid time ns
Master transmitter (after enable edge)
- 40
1.71 ≤ VDD ≤ 3.6
th(SD_A_MT) Data output hold time Master transmitter (after enable edge) 10 - ns
1. Guaranteed by characterization results.
2. APB clock frequency must be at least twice SAI clock frequency.

Figure 39. SAI master timing waveforms

1/fSCK

SAI_SCK_X
th(FS)

SAI_FS_X
(output) tv(FS) tv(SD_MT) th(SD_MT)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_MR) th(SD_MR)

SAI_SD_X Slot n
(receive)
MS32771V1

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Figure 40. SAI slave timing waveforms

1/fSCK

SAI_SCK_X
tw(CKH_X) tw(CKL_X) th(FS)

SAI_FS_X
(input) tsu(FS) tv(SD_ST) th(SD_ST)

SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_SR) th(SD_SR)

SAI_SD_X Slot n
(receive)
MS32772V1

SDMMC characteristics
Unless otherwise specified, the parameters given in Table 99 for SDIO are derived from
tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 23: General operating conditions, with the following
configuration:
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output
characteristics.

Table 99. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V(1)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 4/3 -
tW(CKL) Clock low time fPP = 50 MHz 8 10 - ns
tW(CKH) Clock high time fPP = 50 MHz 8 10 - ns
CMD, D inputs (referenced to CK) in MMC and SD HS mode
tISU Input setup time HS fPP = 50 MHz 3.5 - - ns
tIH Input hold time HS fPP = 50 MHz 2.5 - - ns
CMD, D outputs (referenced to CK) in MMC and SD HS mode
tOV Output valid time HS fPP = 50 MHz - 12 13 ns
tOH Output hold time HS fPP = 50 MHz 10 - - ns
CMD, D inputs (referenced to CK) in SD default mode
tISUD Input setup time SD fPP = 50 MHz 3.5 - - ns
tIHD Input hold time SD fPP = 50 MHz 3 - - ns

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Table 99. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD fPP = 50 MHz - 2 3 ns
tOHD Output hold default time SD fPP = 50 MHz 0 - - ns
1. Guaranteed by characterization results.

Table 100. eMMC dynamic characteristics, VDD = 1.71 V to 1.9 V(1)(2)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 4/3 -
tW(CKL) Clock low time fPP = 50 MHz 8 10 - ns
tW(CKH) Clock high time fPP = 50 MHz 8 10 - ns
CMD, D inputs (referenced to CK) in eMMC mode
tISU Input setup time HS fPP = 50 MHz 0 - - ns
tIH Input hold time HS fPP = 50 MHz 1.5 - - ns
CMD, D outputs (referenced to CK) in eMMC mode
tOV Output valid time HS fPP = 50 MHz - 13.5 15 ns
tOH Output hold time HS fPP = 50 MHz 9 - - ns
1. Guaranteed by characterization results.
2. CLOAD = 20pF.

Figure 41. SDIO high-speed mode

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Electrical characteristics STM32L452xx

Figure 42. SD default mode

CK
tOVD tOHD
D, CMD
(output)

ai14888

USB characteristics
The STM32L452xx USB interface is fully compliant with the USB specification version 2.0
and is USB-IF certified (for Full-speed device operation).

Table 101. USB electrical characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDDUSB USB transceiver operating voltage 3.0(2) - 3.6 V

Tcrystal_less USB crystal less operation temperature -15 - 85 °C

tSTARTUP(3) USB transceiver startup time - - 1.0 µs

RPUI Embedded USB_DP pull-up value during idle 900 1250 1600
Embedded USB_DP pull-up value during Ω
RPUR 1400 2300 3200
reception
Driving high
ZDRV(3) Output driver impedance(4) 28 36 44 Ω
and low
1. TA = -40 to 125 °C unless otherwise specified.
2. The STM32L452xx USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics
which are degraded in the 2.7-to-3.0 V voltage range.
3. Guaranteed by design.
4. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching
impedance is already included in the embedded driver.

CAN (controller area network) interface

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CAN_TX and CAN_RX).

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STM32L452xx Package information

7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.

7.1 LQFP100 package information

This LQFP is a 100-pin, 14 x 14 mm low-profile quad flat package.

Figure 43. LQFP100 - Outline

SEATING PLANE
C

0.25 mm
A2
A

A1

c
GAUGE PLANE

ccc C

A1
K
L
D1
L1
D3

75 51

76 50
b

E1
E3

100 26
PIN 1 1 25
IDENTIFICATION
e 1L_ME_V5

1. Drawing is not to scale.

Table 102. LQFP100 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

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Package information STM32L452xx

Table 102. LQFP100 - Mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

b 0.170 0.220 0.270 0.0067 0.0087 0.0106

c 0.090 - 0.200 0.0035 - 0.0079
D 15.800 16.000 16.200 0.6220 0.6299 0.6378
D1 13.800 14.000 14.200 0.5433 0.5512 0.5591
D3 - 12.000 - - 0.4724 -
E 15.800 16.000 16.200 0.6220 0.6299 0.6378
E1 13.800 14.000 14.200 0.5433 0.5512 0.5591
E3 - 12.000 - - 0.4724 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0.0° 3.5° 7.0° 0.0° 3.5° 7.0°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.

Figure 44. LQFP100 - Recommended footprint

75 51

76 50
0.5

0.3

16.7 14.3

100 26

1.2
1 25

12.3

16.7

ai14906c

1. Dimensions are expressed in millimeters.

194/221 DS11912 Rev 7

STM32L452xx Package information

Device marking
The following figures give examples of topside marking orientation versus pin 1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 45. LQFP100 marking (package top view)

Product identification(1)
STM32L452 Optional gate mark

VET6 B Revision code

Date code

Y WW

Pin 1
indentifier

MSv43806V1

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

DS11912 Rev 7 195/221

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Package information STM32L452xx

7.2 UFBGA100 package information

This UFBGA is a 100-ball, 7 x 7 mm, 0.50 mm pitch, ultra fine pitch ball grid array package.

Figure 46. UFBGA100 -Outline

Z Seating plane

ddd Z

A4 A3 A2 A1 A
E1 X
A1 ball A1 ball
identifier index area E
e Z

A
Z

D1 D

e
Y
M

12 1
BOTTOM VIEW Øb (100 balls) TOP VIEW
Ø eee M Z Y X
Ø fff M Z
A0C2_ME_V5

1. Drawing is not to scale.

Table 103. UFBGA100 - Mechanical data

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

A - - 0.600 - - 0.0236
A1 - - 0.110 - - 0.0043
A2 - 0.450 - - 0.0177 -
A3 - 0.130 - - 0.0051 0.0094
A4 - 0.320 - - 0.0126 -
b 0.240 0.290 0.340 0.0094 0.0114 0.0134
D 6.850 7.000 7.150 0.2697 0.2756 0.2815
D1 - 5.500 - - 0.2165 -
E 6.850 7.000 7.150 0.2697 0.2756 0.2815
E1 - 5.500 - - 0.2165 -
e - 0.500 - - 0.0197 -
Z - 0.750 - - 0.0295 -

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Table 103. UFBGA100 - Mechanical data (continued)

millimeters inches(1)
Symbol
Min. Typ. Max. Min. Typ. Max.

ddd - - 0.080 - - 0.0031

eee - - 0.150 - - 0.0059
fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 47. UFBGA100 - Recommended footprint

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 104. UFBGA100 - Recommended PCB design rules (0.5 mm pitch BGA)
Dimension Recommended values

Pitch 0.5
Dpad 0.280 mm
0.370 mm typ. (depends on the solder mask
Dsm
registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm

Device marking
The following figure gives an example of topside marking orientation versus ball A1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

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Package information STM32L452xx

Figure 48. UFBGA100 marking (package top view)

STM32L
Product identification(1)

452VEI6

Y WW Date code

Ball A1 identifier
B

MSv43808V2

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

198/221 DS11912 Rev 7

STM32L452xx Package information

7.3 LQFP64 package information

This LQFP is a 64-pin, 10 x 10 mm low-profile quad flat package.

Figure 49. LQFP64 - Outline

SEATING PLANE
C
A2
A
0.25 mm
GAUGE PLANE
A1

c
ccc C

A1
D K
D1 L
D3 L1
48 33

32
49

E1
E3

64 17 E

PIN 1 1 16
IDENTIFICATION e
5W_ME_V3

1. Drawing is not to scale.

Table 105. LQFP64 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D - 12.000 - - 0.4724 -
D1 - 10.000 - - 0.3937 -
D3 - 7.500 - - 0.2953 -
E - 12.000 - - 0.4724 -
E1 - 10.000 - - 0.3937 -

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Package information STM32L452xx

Table 105. LQFP64 - Mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

E3 - 7.500 - - 0.2953 -
e - 0.500 - - 0.0197 -
K 0° 3.5° 7° 0° 3.5° 7°
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to four decimal digits.

Figure 50. LQFP64 - Recommended footprint

48 33

0.3
49 0.5 32

12.7

10.3

10.3
64 17

1.2
1 16

7.8

12.7

ai14909c

1. Dimensions are expressed in millimeters.

Device marking
The following figure give examples of topside marking orientation versus pin 1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

200/221 DS11912 Rev 7

STM32L452xx Package information

Figure 51. LQFP64 marking (package top view)

Revision code
Product identification(1) B
STM32L452
RET6

Y WW Date code

Pin 1 identifier

MSv43810V1

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

DS11912 Rev 7 201/221

217
Package information STM32L452xx

7.4 UFBGA64 package information

This UFBGA is a 64 balls, 5 x 5 mm, 0.5 mm pitch ultra profile fine pitch ball grid array
package.

Figure 52. UFBGA64 - Outline

Z Seating plane

ddd Z

A4
A3 A2 A1 A
E1 A1 ball A1 ball X
identifier index area E
e F

A
F

D1 D
e

H Y

8 1
BOTTOM VIEW Øb (64 balls) TOP VIEW
Ø eee M Z Y X
Ø fff M Z A019_ME_V1

1. Drawing is not to scale.

Table 106. UFBGA64 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.460 0.530 0.600 0.0181 0.0209 0.0236

A1 0.050 0.080 0.110 0.0020 0.0031 0.0043
A2 0.400 0.450 0.500 0.0157 0.0177 0.0197
A3 0.080 0.130 0.180 0.0031 0.0051 0.0071
A4 0.270 0.320 0.370 0.0106 0.0126 0.0146
b 0.170 0.280 0.330 0.0067 0.0110 0.0130
D 4.850 5.000 5.150 0.1909 0.1969 0.2028
D1 3.450 3.500 3.550 0.1358 0.1378 0.1398
E 4.850 5.000 5.150 0.1909 0.1969 0.2028
E1 3.450 3.500 3.550 0.1358 0.1378 0.1398
e - 0.500 - - 0.0197 -
F 0.700 0.750 0.800 0.0276 0.0295 0.0315

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Table 106. UFBGA64 - Mechanical data (continued)

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

ddd - - 0.080 - - 0.0031

eee - - 0.150 - - 0.0059
fff - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 53. UFBGA64 - Recommended footprint

Dpad

Dsm
BGA_WLCSP_FT_V1

Table 107. UFBGA64 - Recommended PCB design rules (0.5 mm pitch BGA)
Dimension Recommended values

Pitch 0.5
Dpad 0.280 mm
0.370 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.280 mm
Stencil thickness Between 0.100 mm and 0.125 mm
Pad trace width 0.100 mm

Device marking
The following figure gives an example of topside marking orientation versus ball A1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

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Package information STM32L452xx

Figure 54. UFBGA64 marking (package top view)

Product identification(1) L452REI6

Y WW Date code

B
Ball A1 identifier

MSv43812V2

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

204/221 DS11912 Rev 7

STM32L452xx Package information

7.5 WLCSP64 package information

This WLCSP is a 64 balls, 3.357x3.657 mm 0.4 mm pitch wafer level chip scale package.

Figure 55. WLCSP64 - Outline

ORIENTATION
F REFERENCE
e1 DETAIL A
G A1

e2 E E

e
A
D D
A2
BOTTOM VIEW TOP VIEW
SIDE VIEW
BUMP SIDE WAFER BACK SIDE

A3 A2
BUMP

A2
FRONT VIEW b

DETAIL A
ROTATED 90

A07P_ME_V1

1. Dimensions are expressed in millimeters.

2. Primary datum Z and seating plane are defined by the spherical crowns of the bump.
3. Bump position designation per JESD 95-1, SPP-010.

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Table 108. WLCSP64 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.525 0.555 0.585 0.0207 0.0219 0.0230

A1 - 0.175 - - 0.0069 -
A2 - 0.380 - - 0.0150 -
A3 - 0.025 - - 0.0010 -
(2)
b 0.220 0.250 0.280 0.0087 0.0098 0.0110
D 3.322 3.357 3.392 0.1308 0.1322 0.1335
E 3.622 3.657 3.692 0.1426 0.1440 0.1454
e - 0.400 - - 0.0157 -
e1 - 2.800 - - 0.1102 -
e2 - 2.800 - - 0.1102 -
F - 0.2785 - - 0.0110 -
G - 0.4285 - - 0.0169 -
aaa - - 0.100 - - 0.0039
bbb - - 0.100 - - 0.0039
ccc - - 0.100 - - 0.0039
ddd - - 0.050 - - 0.0020
eee - - 0.050 - - 0.0020
1. Values in inches are converted from mm and rounded to 4 decimal digits.
2. Dimension is measured at the maximum bump diameter parallel to primary datum Z.

Figure 56. WLCSP64 - Recommended footprint

Dpad

Dsm
BGA_WLCSP_FT_V1

1. Dimensions are expressed in millimeters.

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Table 109. WLCSP64 - Recommended PCB design rules (0.4 mm pitch)

Dimension Recommended values

Pitch 0.4 mm
Dpad 0.225 mm
0.290 mm typ. (depends on the soldermask
Dsm
registration tolerance)
Stencil opening 0.250 mm
Stencil thickness 0.100 mm

Device marking
The following figures give an example of topside marking orientation versus ball A1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 57. WLCSP64 marking (package top view)

Ball A1 identifier

Product identification(1) L452REY6

Date code

Y WW B

MSv43814V2

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

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Figure 58. WLCSP64, external SMPS device, marking (package top view)

Ball A1 identifier

Product identification(1)
452REY6P

Date code

Y WW

MSv50991V1

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

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7.6 LQFP48 package information

This LQFP is a 48 pins, 7 x 7 mm low-profile quad flat package

Figure 59. LQFP48 - Outline

SEATING
PLANE
C

A2
A

A1

c
0.25 mm
GAUGE PLANE
ccc C

D K

A1
L
D1 L1
D3
36 25

37 24

E1
E3

48 13
PIN 1
IDENTIFICATION 1 12

e 5B_ME_V2

1. Drawing is not to scale.

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Table 110. LQFP48 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630
A1 0.050 - 0.150 0.0020 - 0.0059
A2 1.350 1.400 1.450 0.0531 0.0551 0.0571
b 0.170 0.220 0.270 0.0067 0.0087 0.0106
c 0.090 - 0.200 0.0035 - 0.0079
D 8.800 9.000 9.200 0.3465 0.3543 0.3622
D1 6.800 7.000 7.200 0.2677 0.2756 0.2835
D3 - 5.500 - - 0.2165 -
E 8.800 9.000 9.200 0.3465 0.3543 0.3622
E1 6.800 7.000 7.200 0.2677 0.2756 0.2835
E3 - 5.500 - - 0.2165 -
e - 0.500 - - 0.0197 -
L 0.450 0.600 0.750 0.0177 0.0236 0.0295
L1 - 1.000 - - 0.0394 -
k 0° 3.5° 7° 0° 3.5° 7°
ccc - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

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Figure 60. LQFP48 - Recommended footprint

0.50
1.20

0.30
36 25
37 24

0.20
7.30
9.70 5.80

7.30

48 13
1 12

1.20

5.80

9.70

ai14911d

1. Dimensions are expressed in millimeters.

Device marking
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
The printed markings may differ depending on the supply chain.
Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 61. LQFP48 marking (package top view)

STM32L452
Product identification(1)

CET6

Y WW Date code

Pin 1 identifier
Y Revision code

MSv66299V1

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified

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Package information STM32L452xx

and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

7.7 UFQFPN48 package information

This UFQFPN is a 48 leads, 7x7 mm, 0.5 mm pitch, ultra thin fine pitch quad flat package.

Figure 62. UFQFPN48 - Outline

Pin 1 identifier
laser marking area
D

A
E E
T Seating
plane
ddd A1
e b

Detail Y
D
Y

Exposed pad
area D2
1

L
48
C 0.500x45°
pin1 corner R 0.125 typ.

E2 Detail Z

48
Z
A0B9_ME_V3

1. Drawing is not to scale.

2. All leads/pads should also be soldered to the PCB to improve the lead/pad solder joint life.
3. There is an exposed die pad on the underside of the UFQFPN package. It is recommended to connect and
solder this back-side pad to PCB ground.

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Table 111. UFQFPN48 - Mechanical data

millimeters inches(1)
Symbol
Min Typ Max Min Typ Max

A 0.500 0.550 0.600 0.0197 0.0217 0.0236

A1 0.000 0.020 0.050 0.0000 0.0008 0.0020
D 6.900 7.000 7.100 0.2717 0.2756 0.2795
E 6.900 7.000 7.100 0.2717 0.2756 0.2795
D2 5.500 5.600 5.700 0.2165 0.2205 0.2244
E2 5.500 5.600 5.700 0.2165 0.2205 0.2244
L 0.300 0.400 0.500 0.0118 0.0157 0.0197
T - 0.152 - - 0.0060 -
b 0.200 0.250 0.300 0.0079 0.0098 0.0118
e - 0.500 - - 0.0197 -
ddd - - 0.080 - - 0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.

Figure 63. UFQFPN48 - Recommended footprint

7.30

6.20

48 37

1 36

0.20 5.60

7.30
5.80
6.20

5.60
0.30

12 25

13 24

0.50 0.75
0.55
5.80
A0B9_FP_V2

1. Dimensions are expressed in millimeters.

Device marking
The following figure gives an example of topside marking orientation versus ball A1 identifier
location.
The printed markings may differ depending on the supply chain.

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Other optional marking or inset/upset marks, which identify the parts throughout supply
chain operations, are not indicated below.

Figure 64. UFQFPN48 marking (package top view)

STM32L
Product identification(1)

452CEU6

Y WW Date code

Ball A1 identifier
B Revision code

MSv43816V2

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified
and therefore not approved for use in production. ST is not responsible for any consequences resulting
from such use. In no event will ST be liable for the customer using any of these engineering samples in
production. ST’s Quality department must be contacted prior to any decision to use these engineering
samples to run a qualification activity.

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7.8 Thermal characteristics

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
• TA max is the maximum ambient temperature in °C,
• ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
• PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
• PINT max is the product of all IDDXXX and VDDXXX, expressed in Watts. This is the
maximum chip internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ ((VDDIOx – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.

Table 112. Package thermal characteristics

Symbol Parameter Value Unit

Thermal resistance junction-ambient

56
LQFP100 - 14 × 14 mm / 0.5 mm pitch
Thermal resistance junction-ambient
75
UFBGA100 - 7 × 7 mm / 0.5 mm pitch
Thermal resistance junction-ambient
58
LQFP64 - 10 × 10 mm / 0.5 mm pitch
Thermal resistance junction-ambient
ΘJA 65 °C/W
UFBGA64 - 5 × 5 mm / 0.5 mm pitch
Thermal resistance junction-ambient
53
WLCSP64 3.357 x 3.657 / 0.4 mm pitch
Thermal resistance junction-ambient
55.7
LQFP48 7 x 7 / 0.5 mm pitch
Thermal resistance junction-ambient
29
UFQFPN48 - 7 × 7 mm / 0.5 mm pitch

7.8.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org

7.8.2 Selecting the product temperature range

When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Section 8: Ordering information.
Each temperature range suffix corresponds to a specific guaranteed ambient temperature at
maximum dissipation and, to a specific maximum junction temperature.

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As applications do not commonly use the STM32L452xx at maximum dissipation, it is useful

to calculate the exact power consumption and junction temperature to determine which
temperature range is best suited to the application.
The following examples show how to calculate the temperature range needed for a given
application.

Example 1: High-performance application

Assuming the following application conditions:
Maximum ambient temperature TAmax = 75 °C (measured according to JESD51-2),
IDDmax = 50 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL = 0.4 V and maximum 8 I/Os used at the same time in output
at low level with IOL = 20 mA, VOL= 1.3 V
PINTmax = 50 mA × 3.5 V = 175 mW
PIOmax = 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW
This gives: PINTmax = 175 mW and PIOmax = 272 mW:
PDmax = 175 + 272 = 447 mW
Using the values obtained in Table 112 TJmax is calculated as follows:
– For LQFP64, 58 °C/W
TJmax = 75 °C + (58 °C/W × 447 mW) = 75 °C + 25.926 °C = 100.926 °C
This is within the range of the suffix 6 version parts (–40 < TJ < 105 °C) see Section 8:
Ordering information.
In this case, parts must be ordered at least with the temperature range suffix 6 (see Part
numbering).
Note: With this given PDmax user can find the TAmax allowed for a given device temperature range
(order code suffix 6 or 3).
Suffix 6: TAmax = TJmax - (58°C/W × 447 mW) = 105-25.926 = 79.074 °C
Suffix 3: TAmax = TJmax - (58°C/W × 447 mW) = 130-25.926 = 104.074 °C

Example 2: High-temperature application

Using the same rules, it is possible to address applications that run at high ambient
temperatures with a low dissipation, as long as junction temperature TJ remains within the
specified range.
Assuming the following application conditions:
Maximum ambient temperature TAmax = 100 °C (measured according to JESD51-2),
IDDmax = 20 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL = 0.4 V
PINTmax = 20 mA × 3.5 V = 70 mW
PIOmax = 20 × 8 mA × 0.4 V = 64 mW
This gives: PINTmax = 70 mW and PIOmax = 64 mW:
PDmax = 70 + 64 = 134 mW
Thus: PDmax = 134 mW

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Using the values obtained in Table 112 TJmax is calculated as follows:

– For LQFP64, 58 °C/W
TJmax = 100 °C + (58 °C/W × 134 mW) = 100 °C + 7.772 °C = 107.772 °C
This is above the range of the suffix 6 version parts (–40 < TJ < 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 3 (see
Section 8: Ordering information) unless we reduce the power dissipation in order to be able
to use suffix 6 parts.
Refer to Figure 65 to select the required temperature range (suffix 6 or 3) according to your
ambient temperature or power requirements.

Figure 65. LQFP64 PD max vs. TA

700
600
500
PD (mW)

400 Suffix 6
300
200
Suffix 3
100
0
65 75 85 95 105 115 125 135
TA (°C)
MSv45731V1

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Ordering information STM32L452xx

8 Ordering information

Table 113. STM32L452xx ordering information scheme

Example: STM32 L 452 R E T 6 P TR
Device family
STM32 = Arm® based 32-bit microcontroller

Product type
L = ultra-low-power

Device subfamily
452: STM32L452xx

Pin count
C = 48 pins
R = 64 pins
V = 100 pins

Flash memory size

C = 256 KB of Flash memory
E = 512 KB of Flash memory

Package
T = LQFP ECOPACK®2
U = QFN ECOPACK®2
I = UFBGA ECOPACK®2
Y = CSP ECOPACK®2

Temperature range
6 = Industrial temperature range, -40 to 85 °C (105 °C junction)
3 = Industrial temperature range, -40 to 125 °C (130 °C junction)

Option
Blank = Standard production with integrated LDO
P = Dedicated pinout supporting external SMPS

Packing
TR = tape and reel
xxx = programmed parts

For a list of available options (such as speed, package) or for further information on any
aspect of this device contact the nearest ST sales office.

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9 Revision history

Table 114. Document revision history

Date Revision Changes

04-Apr-2017 1 Initial release.

Removed Suffix 7 ordering code and all information
related to 40-105 °C temperature range.
Updated ULPBench® score on cover page.
Updated some power consumptions on cover page.
Updated Table 2: STM32L452xx family device features
and peripheral counts.
03-May-2017 2
Updated max currents in Table 27, Table 29, Table 29,
Table 31, Table 42, Table 44, Table 45, Table 46,
Table 47, Table 48, Table 49.
Updated Table 70.
Updated Table 77.
Added Section 6.3.24: VBAT monitoring characteristics.
Added missing LPUART communication interface on
cover page.
Fixed OPAMP index in Table 4: STM32L452xx modes
overview.
Replaced RAM2 by SRAM2 in Section 3.9.3: Voltage
26-May-2017 3 regulator and Section 3.9.4: Low-power modes.
Updated Section 3.7: Boot modes.
Added Table 10: DFSDM1 implementation.
Updated Table 71: I/O static characteristics.
Updated Section 7.2: UFBGA100 package information.
Updated DAC terminology in all the document for
clarification: single DAC instance (= DAC1) with 2 output
channels.
Added ECOPACK2® information in Features.
Updated LPUART bullet in Features.
Updated Section 3.9.1: Power supply schemes.
Added Figure 3: Power-up/down sequence.
Added DFSDM1 in Table 6: STM32L452xx peripherals
interconnect matrix.
21-May-2018 4 Updated Clock-out capability in Section 3.11: Clocks
and startup.
Updated Figure 4: Clock tree.
Updated Section 3.14.1: Nested vectored interrupt
controller (NVIC).
Removed a footnote in Table 16: STM32L452xx pin
definitions.
Updated Section 6.3.2: Operating conditions at power-
up / power-down.
Updated ACoeff in Table 26: Embedded internal voltage
reference.

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Revision history STM32L452xx

Table 114. Document revision history (continued)

Date Revision Changes

Updated Table 51: Peripheral current consumption.

Added Section 6.3.16: Extended interrupt and event
4
21-May-2018 controller input (EXTI) characteristics.
(continued)
Updated Table 71: I/O static characteristics.
Updated Table 83: DAC characteristics.
Added package size on WLCSP silhouette on cover
page.
Update all figures in Section 4: Pinouts and pin
description in order to remove the main function after
reset (between brackets) from pin names.
Added Figure 12: STM32L452Rx, external SMPS
device, WLCSP64 pinout(1).
Updated Table 16: STM32L452xx pin definitions.
Updated Figure 48: UFBGA100 marking (package top
view).
16-Jan-2019 5 Updated Figure 54: UFBGA64 marking (package top
view).
Updated Table 108: WLCSP64 - Mechanical data.
Updated Table 109: WLCSP64 - Recommended PCB
design rules (0.4 mm pitch).
Updated Figure 57: WLCSP64 marking (package top
view).
Added Figure 58: WLCSP64, external SMPS device,
marking (package top view).
Updated WLCSP package size in Table 112: Package
thermal characteristics.
Updated Figure 15: STM32L452xx memory map.
Updated Table 60: MSI oscillator characteristics.
Updated Section 6.3.14: I/O port characteristics.
19-Jun-2020 6 Updated Table 72: Output voltage characteristics.
Updated Figure 38: Quad SPI timing diagram - DDR
mode.
Updated Table 101: USB electrical characteristics.
Added LQFP48 Package.
Updated Table 2: STM32L452xx family device features
and peripheral counts.
Added Figure 13: STM32L452Cx LQFP48 pinout(1).
Updated Table 16: STM32L452xx pin definitions.
14-Oct-2020 7
Updated Figure 15: STM32L452xx memory map.
Updated Table 23: General operating conditions.
Updated Section 7: Package information.
Added Section 7.6: LQFP48 package information.
Updated Table 112: Package thermal characteristics.

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