Electronic Circuit Design ( EE - 313 ) LAB REPORT
Electronic Circuit Design
(EE-313)
DE-43 Mechatronics
Syndicate – B
LAB REPORT # 3
MOSFET I-V Characteristics & VTC
Names of Group Members:
NS Saad Irfan CMS ID #388842
NS Talha Aftab CMS ID #398492
NS Rayyan Naveed CMS ID #365733
Submitted to: LE Noor Ul Huda
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Electronic Circuit Design ( EE - 313 ) LAB REPORT
Introduction:
In this lab we evaluated and observed the I-V characteristics and threshold voltage of
the IRF 540 MOSFET IC to understand the proper working of the MOSFET IC.
Objective:
To find and plot VTC and IV characteristics of IRF 540 IC.
Apparatus:
1. A 100 Ohms Resistor
2. A LED
3. The IRF 540 MOSFET IC
4. A 100K Ohms Potentiometer
IRF 540 MOSFET
Lab Task #1 VTC OF MOSFET:
In this task, we focused on determining the threshold voltage for the MOSFET within
the circuit. By varying the Gate voltage, established the voltage (Vgs) at which the LED
begins to emit a dim glow. This threshold voltage is a critical parameter in understanding the
MOSFET’s behaviour and serves as a fundamental reference point for circuit design.
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Electronic Circuit Design ( EE - 313 ) LAB REPORT
Nigga circuit picture to be placed here
Figure 1 Circuit Diagram of the task
Lab Task #2 IV Characteristics of the MOSFET:
For this task, we replaced the fixed 100 ohm resistor with a 100k ohms potentiometer.
We standardized the power supply at Vdd with a voltage of 10V. Additionally, we set the
value of Vgs to predetermined values outlined in the provided table. Our objective was to
record measurements across distinct resistance levels of the potentiometer, which were as
follows: 10%, 25%, 50%, and 100% of its total resistance. This process was replicated for
each designated Vgs value to determine the circuit's nuanced responses under varying
conditions.
Nigga circuit pic 2 here
Circuit diagram For lab task 2
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Electronic Circuit Design ( EE - 313 ) LAB REPORT
Proteus Simulation:
SIMULATION PLACE KARDENAAAAAAAAAAA HEHE
Conclusion:
We successfully found the threshold voltage and IV characteristics of the IRF 540
MOSFET IC, further deepening our understanding and concepts regarding the use and
benefits of MOSFETS.
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