Reduction of Threading Dislocation

Threading dislocations (TDs) in gallium nitride (GaN) films can decrease light emission efficiency in light-emitting diodes (LEDs) by acting as nonradiative recombination centers. There are several methods used to reduce the high density of TDs that initially form in heteroepitaxially grown GaN, including growing thicker GaN layers, interlayers like silicon nitride, and epitaxial lateral overgrowth (ELO) techniques. ELO techniques have successfully reduced TD density to as low as 1.7×107 cm-2 but involve complex lithography steps. Further development of TD reduction methods may enable GaN films with uniformly low TD densities needed for high-efficiency LEDs.

Uploaded by

akash512

Available Formats

Download as PPTX, PDF, TXT or read online on Scribd

0% found this document useful (0 votes)

144 views

Reduction of Threading Dislocation

Uploaded by

akash512

Available Formats

Download as PPTX, PDF, TXT or read online on Scribd

You are on page 1/ 11

Reduction of Threading Dislocations in GaN-Based Light Emitters

Dislocations
Termination of a plane of atoms in the middle of a crystal. Can be divided into two groups: misfit dislocations and threading dislocations Misfit dislocations are confined to the interface between the GaN epitaxial layer and the substrate Threading dislocations (TDs) could propagate through the layer, reach the surface of the film Three types of threading dislocations in GaN: pure screw (Fig. 1a), pure edge (Fig. 1b), and mixed type (Fig. 1c).

Fig. 1a

Fig. 1b

Fig. 1c

Effect of TDs
Formation of a nonradiative recombination center where carriers recombine to produce heat rather than light [1]. Yellow luminescence (YL) band[2] possibly due to the trapping of impurities or point defects in dislocations. Forward [3] and reverse [4] leakage current In case of LEDs, the abovementioned effects of TDs result in a decrease of luminescence intensity as well as efficiency.

Fig. 2. CL and TEM images of the same area of a GaN film, showing that there is decreased luminescence where there are TDs [5]

Methods of reducing TDs

Heteroepitaxially grown GaN has extremely high density of TDs (108 -1012 cm-2) [6].

Growing thicker layer: Interactions between TDs occurs. Dislocation density up to 107 cm-2 and below can be achieved by growing the GaN to a thickness of ~300 m [7] Expensive method

Fig. 3. Relationship between thickness and TD density for GaN films [7].

Methods of reducing TDs (contd)

Basic GaN growth: Nitridation of the substrate. Keller et al, reported that nitridation lowered the TD density from 21010 cm-2 to 4108 cm-2 [8]. Growing a nucleation layer (NL) followed by annealing. NL is used to achieve better coverage of the substrate. GaN film growth at a higher temperature than the initial NL . By varying this recipe like changing the NL (GaN or AlN ) or the growth conditions (temperature, reactor pressure, ratio of N to Ga precursor gases etc.) different other in situ methods are obtained. Interlayers:

By exposing the GaN to silane and ammonia, a porous SiNx layer is formed. Many of the TDs are annihilated at or above this layer because, (1) SiNx IL physically block TDs, (2) 3D growth leading to bending of TDs. TD density of mid 109 cm-2 to 9107 cm-2 can be achieved with a coalescence thickness of 6m.

Methods of reducing TDs (contd)

SiNx Interlayers:

Fig. 4. TEM image showing 3D island growth on a SiNx covered GaN film [9]

Fig. 5. PL showing the Effect of SiNx Interlayers in reducing TDs [10]

Methods of reducing TDs (contd)

Epitaxial lateral overgrowth (ELO) A few micrometer thick GaN layer is grown on a suitable substrate. Deposition of dielectric mask (SiO2 or SiNx) , which is then etched into periodic stripes via photolithography along a specific crystallographic orientation. As the growth of GaN is restarted, selected area epitaxy is achieved, in which the GaN grows on the exposed layer only, Lateral growth of the GaN in the regions over the mask stripes leads to very few TDs in those areas.

Fig. 6. One-step ELO [7]

Methods of reducing TDs (contd)

Two step ELO: Formation of triangular pyramidal stripes by changing growth condition. Pyramidal facets induce the TDs to bend over by 90 into the (0001) basal plane . The growth conditions are then altered to favor lateral growth, achieving coalescence. The TD bending mechanism greatly decreases the dislocation density in the coherent region as the bent-over dislocations meet and annihilate With this technique, the average density of TDs over the entire surface has been lowered to 1.7107 cm-2. However, in the regions between the coalescence boundaries, a TD density of 5106 cm-2 has been achieved [7].

Fig. 7. Two-step ELO [7]

Conclusion
There are some other methods like transition metal nitride ILs (TiN/ ScN), maskless ELO, pandeoepitaxy etc used to reduce TDs . Both in situ and ex situ methods of TDs reduction yield an improvement in material quality. In-situ methods are advantageous because of their shorter growth times and easier scalability for manufacturing. ELO techniques have been successful in reducing TD density to a great extent, but the involved lithography steps make this method less attractive. With further work on these reduction methods, GaN films with homogeneously low TD densities may be produced, leading to the production of high efficiency light emitters.

Thank You

References
[1] H. Morko, Handbook of Nitride Semiconductors and Devices, Volume1, Chapter 4. [2] F. A. Ponce et al, Appl. Phys. Lett., 1996, 68, (1), 57-59. [3] S. W. Lee et al, Appl. Phys. Lett., 2006, 89, 132117. [4] J. C. Moore et al, Appl. Phys. Lett., 2007, 90, 011913. [5] T. Sugahara et al, Jpn J. Appl. Phys., 1998, 37, L398-L400. [6] S. Nakamura, Science, 1998, 281, 956-961. [7] P. Gibart, Rep. Prog. Phys., 2004, 67, 667-715. [8] S. Keller et al, Appl. Phys. Lett., 1996, 68, (11), 1525-1527. [9] M. J. Kappers et al, J. Cryst. Growth, 2007, 300, 70-74. [10] S. E. Park et al, J. Cryst. Growth, 2003, 249, 487-491.