Project Report
Project Report
A Project Dissertation
University of Mumbai
Bachelor of Engineering
(Electronics and Telecommunication Engineering)
by
Certificate
This is to certify that, the dissertation titled
Bachelor of Engineering
in
Electronics and Telecommunication Engineering
to the
University of Mumbai.
Head of Department
I declare that this written submission represents my ideas in my own words and where
others' ideas or words have been included. I have adequately cited and referenced the original
sources. I also declare that I have adhered to all principles of academic honesty and integrity
and have not misrepresented or fabricated or falsified any idea/data/fact/source in my
submission. I understand that any violation of the above will be cause for disciplinary action
by the Institute and can also evoke penal action from the sources which have thus not been
properly cited or from whom proper permission has not been taken when needed.
Date: 25/04/2017
Place: Panvel
This is to certify that the dissertation entitled “Design of 4 bit Flash ADC” is a bonafide
work done by Khan Mohammed Salim Maksud Ali under the guidance of Mrs. Geeta
Desai. This dissertation has been approved for the award of Bachelor’s Degree in
Electronics and Telecommunication Engineering, University of Mumbai.
Examiners:
Name: Name:
I have immense pleasure in expressing my thanks and deep sense of gratitude to my guide
Mrs. Geeta Desai, Assistant Professor, Department of Electronics and Telecommunication
Engineering, AIKTC for her guidance throughout this project.
I would also like to express my deepest appreciation to my project coordinator Mrs. Chaya
S., Assistant Professor, Department of Electronics and Telecommunication Engineering,
AIKTC for her technical support in my project.
I also express my sincere thanks to Prof. Mujib Tamboli, Head of the Department,
AIKTC for extending his help.
ACKNOWLEDGEMENTS …………………………………………………………………..v
ABSTRACT ………………………………………………………………………………….vi
CONTENTS ………………………………………………………………………………….ix
1. INTRODUCTION 1
1.1 Overview ….……………....……..………………….……………………..………...1
1.2 Objectives…….……………………….....………………….…………..………...….2
1.3 Analog to Digital converters ………………………….…….…………………….....3
1.4 Types of ADC ……………………………………………………………………….4
1.5 CMOS technology …………………………………………………………………..5
1.5.1 Basics CMOS Concepts ……………………………………………………….5
1.5.2 Drain Current Equation ………………………………………………………..6
2. LITERATURE SURVEY 8
2.1 IEEE 2016 papers …………………….……………………………...………………8
2.2 IEEE 2015 papers ……………….……………………………...……………………9
2.3 Problem Statement …………………………………………………………............10
3. FLASH ADC 11
3.1 General Block Diagram of Flash ADC ..…...…………………………………..…..11
4. DESIGN OF COMPARATORS 13
4.1 Comparators ………………………………………………………………………..13
4.2 Characteristics of Comparators …………………………………………………….15
4.2.1 Static Parameters ……………………………………………………………..15
4.2.2 Dynamic Characteristics ……………………………………………………..,15
4.3 Proposed Comparators ……………………………………………………………..16
4.3.1 Differential Comparator ……………………………………………………...16
4.3.2 Pseudo Dynamic Latched Comparator ……………………………………….18
4.3.3 Open-Loop Comparator ……………………………………………………...20
4.3.4 Resistive Driving Comparator ………………………………………………..21
5. DESIGN OF ENCODER 22
5.1 Introduction ………………………………………………………………………...22
5.2 Types of Thermometer to Binary Code Converters ………………………………..23
5.3 Proposed Encoder …………………………………………………………………..24
7. SOFTWARES 27
7.1 DSCH3 ……………………………………………………………………………..27
7.2 LTspice IV ……………………………………………..…………………………...28
7.3 Microwind3 ………………..……………………………………………………….29
8. SIMULATION RESULTS 30
8.1 Comparators ………………………………………………………………………..30
8.1.1 Differential Comparator ……………………………………………………...30
8.1.2 Pseudo Dynamic Latched Comparator ……………………………………….31
8.1.3 Open-Loop Comparator ……………………………………………………...32
8.1.4 Resistive Driving Comparator ………………………………………………..34
8.2 Thermometer to Binary Encoder ……………...........................................................36
8.3 Flash ADC ………………………………………………………………………….37
8.4 Results ……………………………………………………………………………...39
9. APPLICATIONS 40
11. CONCLUSION 42
REFERENCES 43
INTRODUCTION
1.1 OVERVIEW
The development in the digital signal processor field is rapid due to the advancement
in the integrated circuit technology over the last decade. Moreover, advantage of digital
processing is that it is more immune to noise. So analog-to-digital converter plays an
interface role in between analog signal and digital signal processing system. The
continuous speed enhancement of the wireless communication systems have bring out
huge demands in speed and power specifications of high speed low resolution analog-to-
digital converters.
In reality, digital signal has the benefits of effortless processing, testing and storage.
So we convert the analog signal to the digital signal for processing. The way to
implement this is with the help of analog-to-digital converter as the interface. Researchers
are exploring new design techniques for an ADC with the aim of drop off power
consumption and to enhance the speed of operation. In all the other types of ADCs, flash
ADC design turns out to be more significant as a result of the reality that it frequently
plays a crucial role in other types of ADCs such as multi bit sigma delta ADC and
pipelined ADC.
Over the years, improvement of digital integrated circuit has strongly followed
Moore’s Law. As a result, transistor size has significantly reduced in size and the speed of
digital circuit has been exponentially boosted. This trend broadens the gap between the
digital circuit and its analog counterpart, for which the technology progress is not as
beneficial. On one hand, there exists high speed digital circuit with its ever growing
processing power and efficiency. On the other hand, analog circuit struggles and largely
falls short to maintain pace. Most of systems require communication with the real analog
world at some point or other. For that purpose analog interface circuit, is a crucial factor
in the whole system. It is attractive to push the analog digital border nearer to the real
world, where the system can acquire enhanced advantage of the high speed digital circuit.
This development places high pressure on analog circuit designers to build up very high
speed interface circuits, analog-to- digital and digital to analog converters (ADCs and
DACs) that can sustain with the digital world by maintaining other desirable attributes
like small chip area and low power consumption.
To inspect ADC architecture and identify its requirement and specification of an ADC for
the application.
Design and implement a low power CMOS comparator for the specific application.
Develop and implement a XOR gate based encoder which converts thermometer code to
binary code in flash ADC.
Implement a high speed ADC for the application by combining resistor ladder,
comparators and encoder.
Analyse and compare the results with other types of similar ADCs.
There are several different types of ADCs available, depending on the type of
application. They are usually classified into three main categories depending on their speed of
operation. The three types of ADCs are low speed /serial ADC, medium speed ADC and high
speed ADC. Typically the serial ADCs have very high resolution which means they support
high accuracy whereas high speed ADCs operate at very high frequencies but have relatively
low resolution.
Sigma-Delta Dual-slope
Parameters Flash ADC Pipeline ADC SAR ADC
ADC ADC
Medium
High speed Low speed Medium speed Lo bandwidth
Selection of speed and
and low and medium and high and high
ADC medium
resolution resolution resolution resolution
resolution
Thermometer Digital
Encoding Successive Analog
to binary correction Digital filter
method approximation intergration
code encoder logic
Optimum
4 to 8 bits 12 to 16 bits 10 to 16 bits 14 to 20 bits 16 bits
Resolution
When a circuit contains both NMOS and PMOS transistors we say it is implemented
in CMOS (Complementary MOS)
The linear model describes the behavior of a MOSFET biased with a small drain-to-source
voltage. As the name suggests, the linear model, describes the MOSFET acting as a linear
device. More specifically, it can be modeled as a linear resistor whose resistance is modulated
by the gate-to-source voltage. In this regime, the MOSFET can be used as a switch for analog
and digital signals or as an analog multiplier.
The general expression for the drain current equals the total charge in the inversion layer
divided by the time the carriers need to flow from the source to the drain:
(1)
where Qinv is the inversion layer charge per unit area, W is the gate width, L is the gate length
and tr is the transit time. If the velocity of the carriers is constant between source and drain,
the transit time equals:
(2)
where the velocity, v, equals the product of the mobility and the electric field:
(3)
The constant velocity also implies a constant electric field so that the field equals the drain-
source voltage divided by the gate length. This leads to the following expression for the drain
current:
(4)
We now assume that the charge density in the inversion layer is constant between source
and drain. We also assume that the basic assumption described in section 2 applies, namely
that the charge density in the inversion layer equals minus the product of the capacitance per
unit area and the gate-to-source voltage minus the threshold voltage:
(5)
The inversion layer charge is zero if the gate voltage is lower than the threshold voltage.
Replacing the inversion layer charge density in the expression for the drain current yields
the linear model:
Note that the capacitance in the above equations is the gate oxide capacitance per unit area.
Also note that the drain current is zero if the gate-to-source voltage is less than the threshold
voltage. The linear model is only valid if the drain-to-source voltage is much smaller than
the gate-to-source voltage minus the threshold voltage. This insures that the velocity, the
electric field and the inversion layer charge density is indeed constant between the source
and the drain.
The figure illustrates the behavior of the device in the linear regime: While there is no drain
current if the gate voltage is less than the threshold voltage, the current increases with gate
voltage once it is larger than the threshold voltage. The slope of the curves equals the
conductance of the device, which increases linearly with the applied gate voltage. The figure
therefore illustrates the use of a MOSFET as a voltage-controlled resistor.
2. High Density Magnetic Flash ADC using Domain Wall Motion and Pre-Charge Sense
Amplifiers :
In year 2016, Yogendra Kumar Upadhyaya and Mohd. Hasan presented the paper on
designing and simulation of a domain wall motion based magnetic ADC in which the
comparator is realized using domain wall motion in a magnetic stripe in combination with
MTJ and PCSA with high sample rate, less area and power along with non-volatility. ADC is
a key building block in networking and consumer electronic products. The proposed
magnetic ADC can convert not only electrical signals but also magnetic analog signals.
Moreover, magnetic analog signals can be directly converted into digital contrary to
traditional approach of converting a magnetic signal into an electrical signal.
3. A Bit Swap Logic (BSL) Based Bubble Errorn Correction Method for Flash ADC :
In year 2016, Pranati Ghoshal and Sunit Kumar Sen presented the paper onmethod that can
correct either first, second or any order bubble error – the order of correction depends on the
individual system [Link] is seen that as the number of output bits increases, the proposed
method requires lesser number of transistors.
4. A Metastability Error Detection and Reduction Technique for Partially Active Flash
ADCs:
In year 2016, Xiaochen Yang, Guoping Cui, Yang Zhang, Jiajun Ren and Jin Liu presented a
paper on metastability detection and reduction technique for PA-flash ADCs. Metastability
mechanisms of the proposed comparator-based and prior logic gate-based MDs are analyzed.
Because of the exponential regeneration, the proposed MD can reduce the ADC metastability
rate significantly and measurement shows metastability error rate improvement from 10-6- 10-
12
.
8. Design of 4 Bit Flash ADC using TMCC & NOR ROM Encoder in 90nm CMOS
Technology :
In year 2015,Mr. K. N. Hosur, Mr. Dariyappa, Mr. Shivanand, Mr. Vijay, Mr. Nagesha, Dr.
Girish V. Attimarad, Dr. Harish. presented a paper on the 4 bit Flash ADC with 90nm
CMOSTechnology. Its internal blocks like TMCC, 1 out of 15encoder and NOR ROM
encoder are designed andsimulated. The main advantage of proposed architecture is that, the
static power consumption is very less due to elimination of resistor ladder network. The
average power consumed by this circuit is 4.43mW for input frequency of 2 MHz. The use of
TMCC slightly reduces the transistor matching problem thereby providing a very low power
and high speed.
9. Design of Ultra Low Power Novel 3-Bit Flash ADC in 45nm CMOSTechnology :
In year 2015, Moushumi Das, Bipasha Nath, Durba Sarkar, Aditi Kar and Alak
Majumder presented a paper on an important issue that forces the demand for low power is
the long-life battery operation. Reduction of power loss also incorporates additional
functionalities on the same power budget. We have simulated our proposed model on Tanner
tool V15 with 45nm technology. The designs consumes a power of 235nW and a delay of 9.8
us. The DNL curve shows that they have no missing bits in their design.
10. A 7GS/s, 1.2 V. Pseudo logic Encoder based Flash ADC Using TIQ Technique :
In year 2015,Liyaqat Nazir,Burhan Khurshid and Roohie Naaz Mir presented paper on
a 4- bit Flash type ADC. It has a step size of 0.01300 V. The ADC uses pseudo-dynamic
logic encoding network. Transient analysis simulations are carried in order to measure
important performance parameter. Three main ADC parameters i.e. power consumed, highest
conversion speed achieved and DNL were measured. Differential (DNL) errors measured are
between -0.06283 LSB to +0.088924 LSB. The ADC consumes 1.9807 mW from a 1.2V
supply.
One of the major problem while designing Flash ADC is the power consumption.
Flash ADC consumes more power because of large number of comparators are used. In order
to reduce the power dissipation of Flash ADC, the comparator with very low power has to be
design. In this project, the comparators has to be design with the power dissipation in few
µW and the Flash ADC which is operating at 1V of power supply for the resolution of 4 bits
with the power consumption in few mW.
Flash or parallel converters have the highest speed of any type of ADC. As seen in
Fig. 3.1, they use one comparator per quantization level (2N - 1) and 2N resistors (a resistor-
string DAC). The reference voltage is divided into 2N values, each of which is fed into a
comparator. The input voltage is compared with each reference value and results in a
thermometer code at the output of the comparators. A thermometer code exhibits all zeroes
for each resistor level if the value of vm is less than the value on the resistor string, and ones
if Vin is greater than or equal to voltage on the resistor string. A simple 2N - l : N digital
thermometer decoder circuit converts the compared data into an TV-bit digital word.
Fig. 4.2 shows the ideal transfer characteristics of the ideal comparator. If the
reference signal is above the input signal, the comparator output (VOUT) shifts to logic low
and if the reference voltage is below the input signal, the output is logic high.
If VIN > VREF, VOUT = logic high
If VIN < VREF, VOUT = logic low
4.2.1. Static Parameters: The static parameters describes the performance of a comparator
under DC or steady-state conditions. The main parameters are resolution, gain,offset,
noise, and ICMR
.
[Link].Resolution is the minimum input difference that can be resolved by the
comparator in order to switch between its binary states. When employed in
ADCs,the resolution specification must be equal or lower than the least-
significant-bit (LSB) defined by the converter.
[Link] Gain: The gain, Av, is one of the key limiting factors in achieving the desired
resolution for the comparator.
[Link] Offset is defined as the minimum amount of input voltage required for the
binary-state transition to take place. In a real comparator the offset adds to the
minimum voltage for which the resolution was designed reducing the
resolution of the circuit.
[Link] Noise has great influence on the operation of the comparator, thus affects the
performance of an ADC. The effect of noise in the circuit’s response can be
seen as uncertainty in the time when the comparator’s output switches
between its two states.
[Link] Input common-mode range (ICMR) is the permissible voltage range over
which the input common-mode signal can vary while all transistors remain
biased in the saturation region.
[Link] Propagation delay: Propagation delay is one of the significant parameters for
many applications because it limits the maximum input frequency which can
be processed. Propagation delay gives an idea about the speed of the amplifier
with which it responds to the applied inputs. Propagation delay is defined as
the time needed for the output to attain the 50 % point of a transition after the
differential input signal crosses the offset voltage, when driven by a square
wave.
[Link] Slew rate: Propagation delay varies in accordance with the amplitude of the
input. A larger input results in a smaller delay and vice versa. There is an
upper limit for an input voltage above which the voltage is not be having any
effect on delay. This effect is called slewing and this introduces the term slew
rate. The rate of change of output voltage is called slew rate
[Link] Settling Time is defined as the time needed for the output to be settled within
a specified percent of its final value.
The comparator generates a high whenever the input voltage exceeds the reference
voltage. Thereby, this acts as one bit ADC. The bias voltage and the width of transistors must
be chosen carefully to ensure all transistors are in saturation. The latch also ensures that the
output of all comparators arrive at the same time at the input of encoder. Therefore, the
outputs from comparators are in synchronization with the sampling clock.
The design of D- latch is vital as it is used in the back end of clocked comparator.
Here a very high speed and low jitter D flip- flop (DFF) is designed as shown in fig. 4.4. This
design makes use of only nine transistors thereby reducing the capacitance at the comparator
output. The input pin Clk is connected with the sampling clock of the ADC while pin In is
connected to comparator outputs.
The comparing circuit which can be model has values of resistors R1 and R2 can be
described in the equations. Assume that WA = W7 and WB = W8 and Vtn is the threshold
voltage of the NMOS transistor. If Vin = 1 and Vref = 0 then node Out-will try to discharge
through M5 and M7 but the transistor M3 try to charge up node Out. Therefore it is very
important to make transistor M3 and M4 very weak as compared to M5, M7 and M6, M8, so
that the output will discharge very fast and the propagation delay will decrease.
DESIGN OF ENCODERS
5.1 INTRODUCTION
Flash ADC is one of the fastest methods to convert analog information into digital
information. Flash ADCS are highly used in applications where large bandwidth is required
such as radar processing, sampling oscilloscopes, data acquisition and satellite
communication applications. Flash ADC comprises of three parts; resistor ladder, comparator
and thermometer code to binary code converter. N bit flash ADC architecture requires 2N-1
comparators for its operation. The reference voltage is generated with the help of 2N equally
sized resistor which constitutes resistor ladder. Since the comparators are working in parallel,
flash ADC completes its conversion in one cycle. The output of the comparators is coming in
a specific manner which is called thermometer code. The thermometer code is converted into
binary code with the help of thermometer code to binary code conversion. The speed of the
converter plays a crucial role in the design of flash ADC.
There are different ways with which the implementation of thermometer code to
binary code conversion can be done. It includes
5.2.1 ROM encoder :
A standard and uncomplicated method to encode the thermometer code to
binary code is to utilize ROM encoder. The ROM based method is having two stages.
In the initial stage, the thermometer code is translated in to 1 out of 2N-1 code. This
can be made by using array of NAND gates. The second stage is the ROM
configuration which receives the 1 out of 2N-1 code as input and chooses suitable row
in the ROM and generates the binary outputs.
5.2.2 Multiplexer based encoder :
Multiplexer based encoder needs a smaller amount of hardware and has a
smaller critical path than Wallace tree encoder. The regular structure of multiplexer
based encoder helps in drawing the layout easily [68, 69]. If half of the outputs in the
thermometer code are logic high indicates that most significant bit (MSB) of the
binary output is logic high. So MSB is the value of the thermometer output at level of
2N-1. In order to find out the value of second most significant bit, the original
thermometer code is separated into two partial thermometer codes spaced by 2N-1.
The encoding is done with the help of 2:1 multiplexers. The control input of the
multiplexer is the previously encoded binary output. The second most significant bit
is calculated with the use of two partial thermometer codes and 2:1 multiplexers. This
process is sustained continuously until one 2:1 multiplexer persists. The output of the
last 2:1 multiplexer is the least significant bit.
5.2.3 Wallace tree encoder :
Wallace tree counts the number of one‟s available in the output of the
comparators. The basic building block of the Wallace tree encoder is full adder cell. The
total number of full adders utilized in an encoder of N bit is 2N – N – 1. At the first
logical level, each cell adds up the number of logical one‟s at its entries and gives an
output of two bit binary code. The second stage carries out the adding of two bit words of
adjacent cells to give three bit binary outputs and so on with the intention of obtaining
the final binary output code for the converter.
5.2.4 Logic style encoder:
There are different logic styles to implement the encoder design. Generally the
implementation is done using static CMOS logic style. The advantage of static CMOS
logic style is that it is having the lowest power consumption with a lower speed. For
achieving a higher speed, other logic styles are preferred.
5.2.5 XOR based encoder :
The thermometer to binary encoding is accomplished in two stages in the fat
tree encoder. The first stage translates the thermometer code to 1 out of N code which
means there is only single logic high is present in the code. The second stage translates
the 1 out of N code to binary code with the help of multiple trees of OR. The binary bits
are generated using Fat tree encoder is having a high speed of operation with less power
dissipation in comparison with ROM encoder. Fat tree encoder doesn’t require a clock
signal or pull up resistors. Noise immunity of the fat tree encoder is higher than that of
the ROM encoder.
6.3 ENCODER
High speed bubble tolerant encoder is chosen for the specific application of designing
a 4 bit flash ADC due to bubble tolerance, low power dissipation. With the assist of proposed
encoder, power dissipation of 0.399 mW from 1 V.
SOFTWARE
7.1 DSCH3
Introduction
The DSCH3 software is a logic editor and simulator. DSCH3 is used to validate the
architecture of the logic circuit before the microelectronics design is started. DSCH3 provides
a user-friendly environment for hierarchical logic design, and simulation with delay analysis,
which allows the design and validation of complex logic structures. A key innovative feature
is the possibility to estimate the power consumption of the circuit.
SIMULATION RESULTS
8.1 COMPARATORS
8.1.1 Differential Comparator
8.4 RESULTS
8.4.1 Power dissipation of Comparators
The very high sample rate of this type of ADC enables high-frequency applications
(typically in a few GHz range) like
(i) Radar detection
More often the flash ADC is embedded in a large IC containing many digital
decoding functions.
Also a small flash ADC circuit may be present inside a delta-sigma modulation loop.
Flash ADCs are also used in NAND flash memory, where up to 3 bits are stored
per cell as 8 voltages level on floating gates.
FUTURE SCOPE
Future Scope :
All the parameters of flash ADC can be considered for higher resolution and compare
its characteristics with other low resolution ADCs.
Offset cancellation technique can be adopted in order to reduce the offset in the
comparator which improves the efficiency of the total flash ADC.
Calibration technique shows great potential in high speed and low power flash ADC
design.
CONCLUSION
Flash ADC is taken as the best architecture for the high speed application. The first
step of this project is to design Comparator. Different comparators are designed. Among
them a comparator is selected with the power dissipation of 17.168µW in CMOS 90nm
technology using 1V power supply. The layout had been drawn and the layout area of
comparator obtained is 16µm x 12µm. The XOR based Encoder is designed with the power
dissipation of 0.133mW with 1V power supply. The layout had been drawn and the layout
area of Encoder obtained is 62µm x 17µm. Finally by combining resistor ladder, 15
comparators and encoder, a 4 bit Flash ADC is designed and simulated. The average power
dissipation of designed Flash ADC is 0.5mW to 0.7mW. All the designs are simulated in
Ltspice and DSCH3 software and the layout are drawn on Microwind3 software.
2. Pranati Ghoshal and Sunit Kumar Sen, “A bit swap logic (BSL) based bubble error
correction (BEC) method for flash ADCs”, 2nd International Conference on Control,
Instrumentation, Energy & Communication, Pages: 111 - 115,Year:2016.
3. Yogendra Kumar Upadhyaya, Mohit Kumar Gupta, Mohammad Hasan and Sudhanshu
Maheshwari, “High-Density Magnetic Flash ADC Using Domain-Wall Motion and Pre-
Charge Sense Amplifiers”, IEEE Transactions on Magnetics, Volume: 52, Article :
4100110 ,Year:2016.
4. Xiaochen Yang, Guoping Cui, Yang Zhang, Jiajun Ren, Jin Liu, “A Metastability Error
Detection and Reduction Technique for Partially Active Flash ADCs”, IEEE Transactions
on Circuits and Systems II, Volume: 63,Pages: 331 - 335,Year:2016.
5. Gregor Tretter, Mohammad Mahdi Khafaji, David Fritsche, Corrado Carta, Frank
Ellinger, “Design and Characterization of a 3-bit 24-GS/s Flash ADC in 28-nm Low-
Power Digital CMOS”, IEEE Transactions on Microwave Theory and Techniques,
Volume: 64, Pages: 1143 - 1152,Year:2016.
6. Aditi Kar, Moushumi Das, Bipasha Nath, Durba Sarkar and Alak Majumder,
“Comparative analysis of low power novel encoders for Flash ADC in 45nm
technology”, International Conference on Smart Technologies and Management for
Computing, Communication, Controls, Energy and Materials (ICSTM), Pages:360-
365,Year:2016.
7. Khaled A. El-Gammal and Sameh A. Ibrahim, ”Design of a 10Gsps TI-flash ADC with
modified clocking scheme”,IEEE International Conference on Electronics, Circuits, and
Systems (ICECS),Pages:268 271,Year:2016.
9. Moushumi Das, Bipasha Nath, Durba Sarkar, Aditi Kar and Alak Majumder,“Design of
ultra low power novel 3-bit flash ADC in 45nm CMOS technology”, International
Conference on Smart Technologies and Management for Computing, Communication,
Controls, Energy and Materials , Pages: 239 - 244,Year:2015.
11. Amol Inamdar, Anubhav Sahu, Jie Ren, Sormeh Setoodeh, Raafat Mansour and
Deepnarayan Gupta, “Design and Evaluation of Flash ADC”, IEEE Transactions on
Applied Superconductivity,Volume:25,Article: 1400205, Year:2015.
12. Aditi Kar,Alak Majumder,Abir Jyoti Mondal and Nikhil Mishra, “Design of ultra low
power flash ADC using TMCC & bit referenced encoder in 180nm technology”, IEEE
International Conference on VLSI Systems, Architecture, Technology and Applications
(VLSI-SATA), Pages: 1 - 6 ,Year:2015.
15. Karthik Yogendra, Mei-Chin Chen, Xuanyao Fong and Kaushik Roy, ”Domain wall
motion-based low power hybrid spin-CMOS 5-bit Flash Analog Data Converter”,IEEE
Sixteenth International Symposium on Quality Electronic Design,Pages: 604 - 609,
Year:2015.
16. Ranam Sireesha and Abhishek Kumar, “Design of low power 0.8V Flash ADC using TIQ
in 90nm technology”, International Conference on Smart Technologies and Management
for Computing, Communication, Controls, Energy and Materials , Pages-406 - 410,
Year:2015.